FR2942910B1 - Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur - Google Patents

Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur

Info

Publication number
FR2942910B1
FR2942910B1 FR0951433A FR0951433A FR2942910B1 FR 2942910 B1 FR2942910 B1 FR 2942910B1 FR 0951433 A FR0951433 A FR 0951433A FR 0951433 A FR0951433 A FR 0951433A FR 2942910 B1 FR2942910 B1 FR 2942910B1
Authority
FR
France
Prior art keywords
heterostructure
manufacturing
reduce
donor substrate
strain strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0951433A
Other languages
English (en)
Other versions
FR2942910A1 (fr
Inventor
Mark Kennard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0951433A priority Critical patent/FR2942910B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP09841026A priority patent/EP2404318A1/fr
Priority to SG2011060118A priority patent/SG173788A1/en
Priority to JP2011551420A priority patent/JP2012519372A/ja
Priority to CN200980156845.7A priority patent/CN102318055B/zh
Priority to PCT/EP2009/061711 priority patent/WO2010099837A1/fr
Priority to KR1020117020093A priority patent/KR101302071B1/ko
Priority to US13/254,550 priority patent/US8778777B2/en
Publication of FR2942910A1 publication Critical patent/FR2942910A1/fr
Application granted granted Critical
Publication of FR2942910B1 publication Critical patent/FR2942910B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Element Separation (AREA)
FR0951433A 2009-03-06 2009-03-06 Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur Expired - Fee Related FR2942910B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0951433A FR2942910B1 (fr) 2009-03-06 2009-03-06 Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur
SG2011060118A SG173788A1 (en) 2009-03-06 2009-09-09 A method for manufacturing a heterostructure aiming at reducing the tensile stress condition of the donor substrate
JP2011551420A JP2012519372A (ja) 2009-03-06 2009-09-09 ドナー基板の引張り応力状態を低減させることを目的としたヘテロ構造を製造する方法
CN200980156845.7A CN102318055B (zh) 2009-03-06 2009-09-09 旨在减少施主衬底拉伸应力状态的异质结构体的制造方法
EP09841026A EP2404318A1 (fr) 2009-03-06 2009-09-09 Procédé de fabrication d'une hétérostructure visant à réduire l'état de contrainte de traction du substrat donneur
PCT/EP2009/061711 WO2010099837A1 (fr) 2009-03-06 2009-09-09 Procédé de fabrication d'une hétérostructure visant à réduire l'état de contrainte de traction du substrat donneur
KR1020117020093A KR101302071B1 (ko) 2009-03-06 2009-09-09 제공 기판의 인장 응력 조건을 감소시키기 위한 이종 구조체의 제조 방법
US13/254,550 US8778777B2 (en) 2009-03-06 2009-09-09 Method for manufacturing a heterostructure aiming at reducing the tensile stress condition of a donor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0951433A FR2942910B1 (fr) 2009-03-06 2009-03-06 Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur

Publications (2)

Publication Number Publication Date
FR2942910A1 FR2942910A1 (fr) 2010-09-10
FR2942910B1 true FR2942910B1 (fr) 2011-09-30

Family

ID=40627399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0951433A Expired - Fee Related FR2942910B1 (fr) 2009-03-06 2009-03-06 Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur

Country Status (8)

Country Link
US (1) US8778777B2 (fr)
EP (1) EP2404318A1 (fr)
JP (1) JP2012519372A (fr)
KR (1) KR101302071B1 (fr)
CN (1) CN102318055B (fr)
FR (1) FR2942910B1 (fr)
SG (1) SG173788A1 (fr)
WO (1) WO2010099837A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2977260B1 (fr) 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
FR3051785A1 (fr) 2016-05-25 2017-12-01 Soitec Silicon On Insulator Procede de fabrication d'une couche
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
RU2633437C1 (ru) * 2016-08-01 2017-10-12 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Структура полупроводник-на-изоляторе и способ ее изготовления

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894990B1 (fr) * 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
EP1429381B1 (fr) * 2002-12-10 2011-07-06 S.O.I.Tec Silicon on Insulator Technologies Procédé de fabrication d'un matériau composé
US6911375B2 (en) * 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
EP1782474B1 (fr) * 2004-08-18 2013-11-27 Corning Incorporated Structures semi-conducteur sur isolant contenant du verre/de la vitroceramique a temperature inferieure de recuisson elevee
JP2008510315A (ja) * 2004-08-18 2008-04-03 コーニング インコーポレイテッド 絶縁体上歪半導体構造及び絶縁体上歪半導体構造を作成する方法
JP5064692B2 (ja) * 2006-02-09 2012-10-31 信越化学工業株式会社 Ｓｏｉ基板の製造方法
FR2899594A1 (fr) * 2006-04-10 2007-10-12 Commissariat Energie Atomique Procede d'assemblage de substrats avec traitements thermiques a basses temperatures

Also Published As

Publication number Publication date
KR101302071B1 (ko) 2013-09-05
US8778777B2 (en) 2014-07-15
WO2010099837A1 (fr) 2010-09-10
CN102318055B (zh) 2014-04-23
US20120100690A1 (en) 2012-04-26
JP2012519372A (ja) 2012-08-23
CN102318055A (zh) 2012-01-11
EP2404318A1 (fr) 2012-01-11
FR2942910A1 (fr) 2010-09-10
KR20110110369A (ko) 2011-10-06
SG173788A1 (en) 2011-09-29

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Legal Events

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Owner name: SOITEC, FR

Effective date: 20120423

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