ATE440922T1 - Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen - Google Patents

Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen

Info

Publication number
ATE440922T1
ATE440922T1 AT07727896T AT07727896T ATE440922T1 AT E440922 T1 ATE440922 T1 AT E440922T1 AT 07727896 T AT07727896 T AT 07727896T AT 07727896 T AT07727896 T AT 07727896T AT E440922 T1 ATE440922 T1 AT E440922T1
Authority
AT
Austria
Prior art keywords
low temperature
temperature heat
heat treatments
assembling substrates
substrates
Prior art date
Application number
AT07727896T
Other languages
English (en)
Inventor
Remi Beneyton
Hubert Moriceau
Frank Fournel
Francois Rieutord
Tiec Yannick Le
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE440922T1 publication Critical patent/ATE440922T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1059—Splitting sheet lamina in plane intermediate of faces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Element Separation (AREA)
  • Combinations Of Printed Boards (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Electroluminescent Light Sources (AREA)
AT07727896T 2006-04-10 2007-04-06 Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen ATE440922T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0651290A FR2899594A1 (fr) 2006-04-10 2006-04-10 Procede d'assemblage de substrats avec traitements thermiques a basses temperatures
PCT/EP2007/053428 WO2007116038A1 (fr) 2006-04-10 2007-04-06 Procede d'assemblage de substrats avec traitements thermiques a basses temperatures

Publications (1)

Publication Number Publication Date
ATE440922T1 true ATE440922T1 (de) 2009-09-15

Family

ID=37544382

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07727896T ATE440922T1 (de) 2006-04-10 2007-04-06 Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen

Country Status (7)

Country Link
US (2) US20090162991A1 (de)
EP (1) EP2004768B1 (de)
JP (1) JP5230601B2 (de)
AT (1) ATE440922T1 (de)
DE (1) DE602007002178D1 (de)
FR (1) FR2899594A1 (de)
WO (1) WO2007116038A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008140786A1 (en) 2007-05-11 2008-11-20 Sdc Materials, Inc. Method and apparatus for making uniform and ultrasmall nanoparticles
US8507401B1 (en) 2007-10-15 2013-08-13 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
JP2010045156A (ja) * 2008-08-12 2010-02-25 Toshiba Corp 半導体装置の製造方法
FR2938119B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de detachement de couches semi-conductrices a basse temperature
FR2942910B1 (fr) * 2009-03-06 2011-09-30 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur
US9119309B1 (en) 2009-12-15 2015-08-25 SDCmaterials, Inc. In situ oxide removal, dispersal and drying
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
US8545652B1 (en) 2009-12-15 2013-10-01 SDCmaterials, Inc. Impact resistant material
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US8470112B1 (en) 2009-12-15 2013-06-25 SDCmaterials, Inc. Workflow for novel composite materials
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
EP2744590A4 (de) 2011-08-19 2016-03-16 Sdcmaterials Inc Beschichtete substrate zur verwendung in der katalyse und katalysatoren sowie verfahren zur beschichtung von substraten mit grundierungszusammensetzungen
FR2990054B1 (fr) * 2012-04-27 2014-05-02 Commissariat Energie Atomique Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif.
US9437474B2 (en) 2012-09-05 2016-09-06 Commissariat à l'énergie atomique et aux énergies alternative Method for fabricating microelectronic devices with isolation trenches partially formed under active regions
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
JP2014103291A (ja) * 2012-11-21 2014-06-05 Renesas Electronics Corp 半導体装置の製造方法
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
WO2015013545A1 (en) 2013-07-25 2015-01-29 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters
EP3060335A4 (de) 2013-10-22 2017-07-19 SDCMaterials, Inc. Katalysatordesign für schwerlast-dieselverbrennungsmotoren
EP3068517A4 (de) 2013-10-22 2017-07-05 SDCMaterials, Inc. Zusammensetzungen aus mager-nox-falle
EP3119500A4 (de) 2014-03-21 2017-12-13 SDC Materials, Inc. Zusammensetzungen für passive nox-adsorptionssysteme
FR3040108B1 (fr) 2015-08-12 2017-08-11 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse
FR3085957B1 (fr) 2018-09-14 2021-01-29 Commissariat Energie Atomique Procede de collage temporaire avec adhesif thermoplastique incorporant une couronne rigide
FR3088480B1 (fr) 2018-11-09 2020-12-04 Commissariat Energie Atomique Procede de collage avec desorption stimulee electroniquement

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US514235A (en) * 1894-02-06 Patrick molyneux
JPS62179110A (ja) 1986-02-03 1987-08-06 Toshiba Corp 直接接着型半導体基板の製造方法
JP2535957B2 (ja) 1987-09-29 1996-09-18 ソニー株式会社 半導体基板
JPH02194519A (ja) 1989-01-23 1990-08-01 Nippon Telegr & Teleph Corp <Ntt> 複合半導体基板およびその製造方法
JPH0389519A (ja) 1989-08-31 1991-04-15 Sony Corp 半導体基板の製法
JPH0636413B2 (ja) * 1990-03-29 1994-05-11 信越半導体株式会社 半導体素子形成用基板の製造方法
US5395788A (en) * 1991-03-15 1995-03-07 Shin Etsu Handotai Co., Ltd. Method of producing semiconductor substrate
JP2726583B2 (ja) * 1991-11-18 1998-03-11 三菱マテリアルシリコン株式会社 半導体基板
JPH0799295A (ja) * 1993-06-07 1995-04-11 Canon Inc 半導体基体の作成方法及び半導体基体
JP2662495B2 (ja) 1993-06-28 1997-10-15 住友シチックス株式会社 接着半導体基板の製造方法
JP2856030B2 (ja) 1993-06-29 1999-02-10 信越半導体株式会社 結合ウエーハの製造方法
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
JPH0917984A (ja) 1995-06-29 1997-01-17 Sumitomo Sitix Corp 貼り合わせｓｏｉ基板の製造方法
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
JP3352896B2 (ja) 1997-01-17 2002-12-03 信越半導体株式会社 貼り合わせ基板の作製方法
JP3352902B2 (ja) 1997-02-21 2002-12-03 信越半導体株式会社 貼り合わせ基板の作製方法
US5985742A (en) * 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
JP3132425B2 (ja) 1997-06-20 2001-02-05 日本電気株式会社 衛星イントラネットサービスにおける通信時間短縮方式
FR2767416B1 (fr) * 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
US6306729B1 (en) * 1997-12-26 2001-10-23 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
DE69917819T2 (de) 1998-02-04 2005-06-23 Canon K.K. SOI Substrat
JP3635200B2 (ja) 1998-06-04 2005-04-06 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JPH11354761A (ja) 1998-06-09 1999-12-24 Sumitomo Metal Ind Ltd Ｓｏｉ基板及びその製造方法
US6093623A (en) * 1998-08-04 2000-07-25 Micron Technology, Inc. Methods for making silicon-on-insulator structures
JP3515917B2 (ja) 1998-12-01 2004-04-05 シャープ株式会社 半導体装置の製造方法
JP4313874B2 (ja) 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US6326279B1 (en) * 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US6664169B1 (en) 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US20020187595A1 (en) * 1999-08-04 2002-12-12 Silicon Evolution, Inc. Methods for silicon-on-insulator (SOI) manufacturing with improved control and site thickness variations and improved bonding interface quality
DE19943101C2 (de) 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
JP3632531B2 (ja) 1999-11-17 2005-03-23 株式会社デンソー 半導体基板の製造方法
EP1189266B1 (de) 2000-03-29 2017-04-05 Shin-Etsu Handotai Co., Ltd. Methode zur herstellung einer siliziumhalbleiterscheibe und einer soi-scheibe soiwe soi-scheibe
JP4846915B2 (ja) * 2000-03-29 2011-12-28 信越半導体株式会社 貼り合わせウェーハの製造方法
JP3991300B2 (ja) * 2000-04-28 2007-10-17 株式会社Ｓｕｍｃｏ 張り合わせ誘電体分離ウェーハの製造方法
JP3768069B2 (ja) * 2000-05-16 2006-04-19 信越半導体株式会社 半導体ウエーハの薄型化方法
JP2002134374A (ja) * 2000-10-25 2002-05-10 Mitsubishi Electric Corp 半導体ウェハ、その製造方法およびその製造装置
WO2002058041A1 (en) * 2001-01-18 2002-07-25 Lg Electronics Inc. Plasma display panel and driving method thereof
JP2003078115A (ja) 2001-08-30 2003-03-14 Shin Etsu Handotai Co Ltd Ｓｏｉウェーハのレーザーマーク印字方法、及び、ｓｏｉウェーハ
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
FR2837981B1 (fr) * 2002-03-28 2005-01-07 Commissariat Energie Atomique Procede de manipulation de couches semiconductrices pour leur amincissement
FR2839385B1 (fr) * 2002-05-02 2004-07-23 Soitec Silicon On Insulator Procede de decollement de couches de materiau
EP1507292B1 (de) 2002-05-20 2012-05-02 Sumco Corporation Verfahren zur herstellung des laminiertes substrats und für das verfahren benutzte druckeinspannvorrichtungen für die äussere wafer-peripherie
WO2004008525A1 (en) 2002-07-17 2004-01-22 S.O.I.Tec Silicon On Insulator Technologies Method of smoothing the outline of a useful layer of material transferred onto a support substrate
EP1429381B1 (de) * 2002-12-10 2011-07-06 S.O.I.Tec Silicon on Insulator Technologies Verfahren zur Herstellung eines Verbundmaterials
US7122095B2 (en) * 2003-03-14 2006-10-17 S.O.I.Tec Silicon On Insulator Technologies S.A. Methods for forming an assembly for transfer of a useful layer
FR2852445B1 (fr) 2003-03-14 2005-05-20 Soitec Silicon On Insulator Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique
EP1482548B1 (de) * 2003-05-26 2016-04-13 Soitec Verfahren zur Herstellung von Halbleiterscheiben
US6841848B2 (en) * 2003-06-06 2005-01-11 Analog Devices, Inc. Composite semiconductor wafer and a method for forming the composite semiconductor wafer
EP1667218B9 (de) * 2003-09-08 2019-11-20 SUMCO Corporation Soi-wafer und verfahren zu seiner herstellung
FR2860842B1 (fr) * 2003-10-14 2007-11-02 Tracit Technologies Procede de preparation et d'assemblage de substrats
US7442992B2 (en) * 2004-05-19 2008-10-28 Sumco Corporation Bonded SOI substrate, and method for manufacturing the same
JP4918229B2 (ja) 2005-05-31 2012-04-18 信越半導体株式会社 貼り合わせウエーハの製造方法
FR2935535B1 (fr) 2008-09-02 2010-12-10 S O I Tec Silicon On Insulator Tech Procede de detourage mixte.

Also Published As

Publication number Publication date
FR2899594A1 (fr) 2007-10-12
US20090162991A1 (en) 2009-06-25
US20120088352A1 (en) 2012-04-12
JP5230601B2 (ja) 2013-07-10
DE602007002178D1 (de) 2009-10-08
US8530331B2 (en) 2013-09-10
JP2009533854A (ja) 2009-09-17
EP2004768B1 (de) 2009-08-26
WO2007116038A1 (fr) 2007-10-18
EP2004768A1 (de) 2008-12-24

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