DE602007002178D1 - Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen - Google Patents
Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturenInfo
- Publication number
- DE602007002178D1 DE602007002178D1 DE602007002178T DE602007002178T DE602007002178D1 DE 602007002178 D1 DE602007002178 D1 DE 602007002178D1 DE 602007002178 T DE602007002178 T DE 602007002178T DE 602007002178 T DE602007002178 T DE 602007002178T DE 602007002178 D1 DE602007002178 D1 DE 602007002178D1
- Authority
- DE
- Germany
- Prior art keywords
- low temperatures
- heat treatments
- assembling substrates
- substrates
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000011282 treatment Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1059—Splitting sheet lamina in plane intermediate of faces
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Element Separation (AREA)
- Electroluminescent Light Sources (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0651290A FR2899594A1 (fr) | 2006-04-10 | 2006-04-10 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
PCT/EP2007/053428 WO2007116038A1 (fr) | 2006-04-10 | 2007-04-06 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007002178D1 true DE602007002178D1 (de) | 2009-10-08 |
Family
ID=37544382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007002178T Active DE602007002178D1 (de) | 2006-04-10 | 2007-04-06 | Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen |
Country Status (7)
Country | Link |
---|---|
US (2) | US20090162991A1 (de) |
EP (1) | EP2004768B1 (de) |
JP (1) | JP5230601B2 (de) |
AT (1) | ATE440922T1 (de) |
DE (1) | DE602007002178D1 (de) |
FR (1) | FR2899594A1 (de) |
WO (1) | WO2007116038A1 (de) |
Families Citing this family (27)
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WO2008140786A1 (en) | 2007-05-11 | 2008-11-20 | Sdc Materials, Inc. | Method and apparatus for making uniform and ultrasmall nanoparticles |
US8481449B1 (en) | 2007-10-15 | 2013-07-09 | SDCmaterials, Inc. | Method and system for forming plug and play oxide catalysts |
JP2010045156A (ja) * | 2008-08-12 | 2010-02-25 | Toshiba Corp | 半導体装置の製造方法 |
FR2938119B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
FR2942910B1 (fr) * | 2009-03-06 | 2011-09-30 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur |
US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
US8545652B1 (en) | 2009-12-15 | 2013-10-01 | SDCmaterials, Inc. | Impact resistant material |
US8470112B1 (en) | 2009-12-15 | 2013-06-25 | SDCmaterials, Inc. | Workflow for novel composite materials |
US9119309B1 (en) | 2009-12-15 | 2015-08-25 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying |
US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
US8803025B2 (en) | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
AU2012299065B2 (en) | 2011-08-19 | 2015-06-04 | SDCmaterials, Inc. | Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions |
FR2990054B1 (fr) * | 2012-04-27 | 2014-05-02 | Commissariat Energie Atomique | Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif. |
WO2014039034A1 (en) | 2012-09-05 | 2014-03-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for fabricating microelectronic devices with isolation trenches partially formed under active regions |
US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
JP2014103291A (ja) * | 2012-11-21 | 2014-06-05 | Renesas Electronics Corp | 半導体装置の製造方法 |
US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
EP3024571B1 (de) | 2013-07-25 | 2020-05-27 | Umicore AG & Co. KG | Reinigungsbeschichtungen und beschichtete substrate für katalytische wandler |
WO2015061477A1 (en) | 2013-10-22 | 2015-04-30 | SDCmaterials, Inc. | Catalyst design for heavy-duty diesel combustion engines |
EP3068517A4 (de) | 2013-10-22 | 2017-07-05 | SDCMaterials, Inc. | Zusammensetzungen aus mager-nox-falle |
CN106470752A (zh) | 2014-03-21 | 2017-03-01 | Sdc材料公司 | 用于被动nox吸附(pna)系统的组合物 |
FR3040108B1 (fr) | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
FR3085957B1 (fr) | 2018-09-14 | 2021-01-29 | Commissariat Energie Atomique | Procede de collage temporaire avec adhesif thermoplastique incorporant une couronne rigide |
FR3088480B1 (fr) | 2018-11-09 | 2020-12-04 | Commissariat Energie Atomique | Procede de collage avec desorption stimulee electroniquement |
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US514235A (en) * | 1894-02-06 | Patrick molyneux | ||
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JP2535957B2 (ja) | 1987-09-29 | 1996-09-18 | ソニー株式会社 | 半導体基板 |
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JP2662495B2 (ja) | 1993-06-28 | 1997-10-15 | 住友シチックス株式会社 | 接着半導体基板の製造方法 |
JP2856030B2 (ja) | 1993-06-29 | 1999-02-10 | 信越半導体株式会社 | 結合ウエーハの製造方法 |
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US5869386A (en) * | 1995-09-28 | 1999-02-09 | Nec Corporation | Method of fabricating a composite silicon-on-insulator substrate |
JP3352896B2 (ja) | 1997-01-17 | 2002-12-03 | 信越半導体株式会社 | 貼り合わせ基板の作製方法 |
JP3352902B2 (ja) | 1997-02-21 | 2002-12-03 | 信越半導体株式会社 | 貼り合わせ基板の作製方法 |
US5985742A (en) * | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
JP3132425B2 (ja) | 1997-06-20 | 2001-02-05 | 日本電気株式会社 | 衛星イントラネットサービスにおける通信時間短縮方式 |
FR2767416B1 (fr) * | 1997-08-12 | 1999-10-01 | Commissariat Energie Atomique | Procede de fabrication d'un film mince de materiau solide |
EP0926709A3 (de) * | 1997-12-26 | 2000-08-30 | Canon Kabushiki Kaisha | Herstellungsmethode einer SOI Struktur |
DE69917819T2 (de) | 1998-02-04 | 2005-06-23 | Canon K.K. | SOI Substrat |
JP3635200B2 (ja) | 1998-06-04 | 2005-04-06 | 信越半導体株式会社 | Soiウェーハの製造方法 |
JPH11354761A (ja) | 1998-06-09 | 1999-12-24 | Sumitomo Metal Ind Ltd | Soi基板及びその製造方法 |
US6093623A (en) * | 1998-08-04 | 2000-07-25 | Micron Technology, Inc. | Methods for making silicon-on-insulator structures |
JP3515917B2 (ja) | 1998-12-01 | 2004-04-05 | シャープ株式会社 | 半導体装置の製造方法 |
JP4313874B2 (ja) * | 1999-02-02 | 2009-08-12 | キヤノン株式会社 | 基板の製造方法 |
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JP3768069B2 (ja) * | 2000-05-16 | 2006-04-19 | 信越半導体株式会社 | 半導体ウエーハの薄型化方法 |
JP2002134374A (ja) * | 2000-10-25 | 2002-05-10 | Mitsubishi Electric Corp | 半導体ウェハ、その製造方法およびその製造装置 |
JP4149263B2 (ja) * | 2001-01-18 | 2008-09-10 | エルジー エレクトロニクス インコーポレーテッド | プラズマディスプレイパネル及びその駆動方法 |
JP2003078115A (ja) | 2001-08-30 | 2003-03-14 | Shin Etsu Handotai Co Ltd | Soiウェーハのレーザーマーク印字方法、及び、soiウェーハ |
FR2834123B1 (fr) * | 2001-12-21 | 2005-02-04 | Soitec Silicon On Insulator | Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report |
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EP2164096B1 (de) | 2002-07-17 | 2012-09-05 | Soitec | Verfahren zur Glättung der Kontur einer nützlichen, auf ein Trägersubstrat übertragenen Materialschicht |
EP1429381B1 (de) * | 2002-12-10 | 2011-07-06 | S.O.I.Tec Silicon on Insulator Technologies | Verfahren zur Herstellung eines Verbundmaterials |
US7122095B2 (en) * | 2003-03-14 | 2006-10-17 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Methods for forming an assembly for transfer of a useful layer |
FR2852445B1 (fr) | 2003-03-14 | 2005-05-20 | Soitec Silicon On Insulator | Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique |
EP1482548B1 (de) * | 2003-05-26 | 2016-04-13 | Soitec | Verfahren zur Herstellung von Halbleiterscheiben |
US6841848B2 (en) * | 2003-06-06 | 2005-01-11 | Analog Devices, Inc. | Composite semiconductor wafer and a method for forming the composite semiconductor wafer |
US7713838B2 (en) * | 2003-09-08 | 2010-05-11 | Sumco Corporation | SOI wafer and its manufacturing method |
FR2860842B1 (fr) * | 2003-10-14 | 2007-11-02 | Tracit Technologies | Procede de preparation et d'assemblage de substrats |
US7442992B2 (en) * | 2004-05-19 | 2008-10-28 | Sumco Corporation | Bonded SOI substrate, and method for manufacturing the same |
JP4918229B2 (ja) | 2005-05-31 | 2012-04-18 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法 |
FR2935535B1 (fr) | 2008-09-02 | 2010-12-10 | S O I Tec Silicon On Insulator Tech | Procede de detourage mixte. |
-
2006
- 2006-04-10 FR FR0651290A patent/FR2899594A1/fr not_active Withdrawn
-
2007
- 2007-04-06 EP EP07727896A patent/EP2004768B1/de active Active
- 2007-04-06 US US12/296,250 patent/US20090162991A1/en not_active Abandoned
- 2007-04-06 AT AT07727896T patent/ATE440922T1/de not_active IP Right Cessation
- 2007-04-06 DE DE602007002178T patent/DE602007002178D1/de active Active
- 2007-04-06 WO PCT/EP2007/053428 patent/WO2007116038A1/fr active Application Filing
- 2007-04-06 JP JP2009504710A patent/JP5230601B2/ja active Active
-
2011
- 2011-10-14 US US13/273,982 patent/US8530331B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2009533854A (ja) | 2009-09-17 |
WO2007116038A1 (fr) | 2007-10-18 |
ATE440922T1 (de) | 2009-09-15 |
US20120088352A1 (en) | 2012-04-12 |
US8530331B2 (en) | 2013-09-10 |
EP2004768B1 (de) | 2009-08-26 |
US20090162991A1 (en) | 2009-06-25 |
JP5230601B2 (ja) | 2013-07-10 |
FR2899594A1 (fr) | 2007-10-12 |
EP2004768A1 (de) | 2008-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |