TW200707801A - Light emitting element and method of manufacturingthe same - Google Patents

Light emitting element and method of manufacturingthe same

Info

Publication number
TW200707801A
TW200707801A TW095114610A TW95114610A TW200707801A TW 200707801 A TW200707801 A TW 200707801A TW 095114610 A TW095114610 A TW 095114610A TW 95114610 A TW95114610 A TW 95114610A TW 200707801 A TW200707801 A TW 200707801A
Authority
TW
Taiwan
Prior art keywords
brazing material
layer
material layer
light emitting
melting point
Prior art date
Application number
TW095114610A
Other languages
Chinese (zh)
Other versions
TWI414076B (en
Inventor
Kazunori Hagimoto
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200707801A publication Critical patent/TW200707801A/en
Application granted granted Critical
Publication of TWI414076B publication Critical patent/TWI414076B/en

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Abstract

To provide a light emitting element which has a structure wherein a light emitting layer part and a Si substrate are laminated with a metal layer between them, and is hard to decrease lamination strength and reflection factor. A main metal layer 10c forming a reflecting surface is formed on a second principal surface of a compound semiconductor layer 50, and further a first brazing material layer 10s1 comprising an AuSn brazing material whose melting point is 364 DEG C or below is so arranged as to coat the main metal layer 10c. A second brazing material layer 10s2 comprising AuSn brazing material whose melting point is 364 DEG C or below is arranged on a first principal surface of a Si substrate 7. Then, the first brazing material layer 10s1 and the second brazing material layer 10s2 are piled and pressurized, and at the same time, heat treatment for lamination is performed for them at the temperature which is equal to or higher than the melting point of the AuSn brazing material and lower than 364 DEG C, to bind and laminate the first brazing material layer 10s1 and the second brazing material layer 10s2.
TW95114610A 2005-04-27 2006-04-25 Manufacturing method of light-emitting element and light-emitting element TWI414076B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005129679 2005-04-27
JP2006114877A JP5196288B2 (en) 2005-04-27 2006-04-18 Light emitting device manufacturing method and light emitting device

Publications (2)

Publication Number Publication Date
TW200707801A true TW200707801A (en) 2007-02-16
TWI414076B TWI414076B (en) 2013-11-01

Family

ID=37553922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95114610A TWI414076B (en) 2005-04-27 2006-04-25 Manufacturing method of light-emitting element and light-emitting element

Country Status (2)

Country Link
JP (1) JP5196288B2 (en)
TW (1) TWI414076B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5075786B2 (en) * 2008-10-06 2012-11-21 株式会社東芝 Light emitting device and manufacturing method thereof
JP2010186829A (en) 2009-02-10 2010-08-26 Toshiba Corp Method for manufacturing light emitting element
JP2010263050A (en) * 2009-05-01 2010-11-18 Showa Denko Kk Light emitting diode, method for producing the same, and light emitting diode lamp

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403233B1 (en) * 2000-04-13 2002-06-11 Agere Systems Guardian Corp. Article comprising creep-resistant and stress-reducing solder
JP4572597B2 (en) * 2003-06-20 2010-11-04 日亜化学工業株式会社 Nitride semiconductor device
JP4697650B2 (en) * 2003-08-29 2011-06-08 信越半導体株式会社 Light emitting element
JP4814503B2 (en) * 2004-09-14 2011-11-16 スタンレー電気株式会社 Semiconductor device, manufacturing method thereof, and electronic component unit
JP4818732B2 (en) * 2005-03-18 2011-11-16 シャープ株式会社 Method of manufacturing nitride semiconductor device

Also Published As

Publication number Publication date
JP5196288B2 (en) 2013-05-15
TWI414076B (en) 2013-11-01
JP2006332610A (en) 2006-12-07

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