TW200707801A - Light emitting element and method of manufacturingthe same - Google Patents
Light emitting element and method of manufacturingthe sameInfo
- Publication number
- TW200707801A TW200707801A TW095114610A TW95114610A TW200707801A TW 200707801 A TW200707801 A TW 200707801A TW 095114610 A TW095114610 A TW 095114610A TW 95114610 A TW95114610 A TW 95114610A TW 200707801 A TW200707801 A TW 200707801A
- Authority
- TW
- Taiwan
- Prior art keywords
- brazing material
- layer
- material layer
- light emitting
- melting point
- Prior art date
Links
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
Abstract
To provide a light emitting element which has a structure wherein a light emitting layer part and a Si substrate are laminated with a metal layer between them, and is hard to decrease lamination strength and reflection factor. A main metal layer 10c forming a reflecting surface is formed on a second principal surface of a compound semiconductor layer 50, and further a first brazing material layer 10s1 comprising an AuSn brazing material whose melting point is 364 DEG C or below is so arranged as to coat the main metal layer 10c. A second brazing material layer 10s2 comprising AuSn brazing material whose melting point is 364 DEG C or below is arranged on a first principal surface of a Si substrate 7. Then, the first brazing material layer 10s1 and the second brazing material layer 10s2 are piled and pressurized, and at the same time, heat treatment for lamination is performed for them at the temperature which is equal to or higher than the melting point of the AuSn brazing material and lower than 364 DEG C, to bind and laminate the first brazing material layer 10s1 and the second brazing material layer 10s2.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005129679 | 2005-04-27 | ||
JP2006114877A JP5196288B2 (en) | 2005-04-27 | 2006-04-18 | Light emitting device manufacturing method and light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200707801A true TW200707801A (en) | 2007-02-16 |
TWI414076B TWI414076B (en) | 2013-11-01 |
Family
ID=37553922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95114610A TWI414076B (en) | 2005-04-27 | 2006-04-25 | Manufacturing method of light-emitting element and light-emitting element |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5196288B2 (en) |
TW (1) | TWI414076B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5075786B2 (en) * | 2008-10-06 | 2012-11-21 | 株式会社東芝 | Light emitting device and manufacturing method thereof |
JP2010186829A (en) | 2009-02-10 | 2010-08-26 | Toshiba Corp | Method for manufacturing light emitting element |
JP2010263050A (en) * | 2009-05-01 | 2010-11-18 | Showa Denko Kk | Light emitting diode, method for producing the same, and light emitting diode lamp |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6403233B1 (en) * | 2000-04-13 | 2002-06-11 | Agere Systems Guardian Corp. | Article comprising creep-resistant and stress-reducing solder |
JP4572597B2 (en) * | 2003-06-20 | 2010-11-04 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP4697650B2 (en) * | 2003-08-29 | 2011-06-08 | 信越半導体株式会社 | Light emitting element |
JP4814503B2 (en) * | 2004-09-14 | 2011-11-16 | スタンレー電気株式会社 | Semiconductor device, manufacturing method thereof, and electronic component unit |
JP4818732B2 (en) * | 2005-03-18 | 2011-11-16 | シャープ株式会社 | Method of manufacturing nitride semiconductor device |
-
2006
- 2006-04-18 JP JP2006114877A patent/JP5196288B2/en active Active
- 2006-04-25 TW TW95114610A patent/TWI414076B/en active
Also Published As
Publication number | Publication date |
---|---|
JP5196288B2 (en) | 2013-05-15 |
TWI414076B (en) | 2013-11-01 |
JP2006332610A (en) | 2006-12-07 |
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