US20060131745A1 - Semiconductor device and manufacturing method therefor - Google Patents

Semiconductor device and manufacturing method therefor Download PDF

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Publication number
US20060131745A1
US20060131745A1 US11/282,600 US28260005A US2006131745A1 US 20060131745 A1 US20060131745 A1 US 20060131745A1 US 28260005 A US28260005 A US 28260005A US 2006131745 A1 US2006131745 A1 US 2006131745A1
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Prior art keywords
units
semiconductor
defective
bumps
external output
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US11/282,600
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English (en)
Inventor
Naoki Yutani
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Assigned to MITSUBISHI DENKI KABUSHIKI KAISHA reassignment MITSUBISHI DENKI KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YUTANI, NAOKI
Publication of US20060131745A1 publication Critical patent/US20060131745A1/en
Priority to US12/201,764 priority Critical patent/US7880763B2/en
Priority to US12/948,136 priority patent/US8178972B2/en
Abandoned legal-status Critical Current

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Definitions

  • the present invention relates to semiconductor devices, in which a plurality of semiconductor units is provided and non-defective ones are selectively connected among the plurality of semiconductor units, and relates to methods of manufacturing the same.
  • SiC wafers a plurality of semiconductor units (hereinafter, simply referred to as units) such as Schottky diodes are formed to have an area in which a certain production yield can be secured, and segmentation is performed so as to configure a single SiC chip using the plurality of units.
  • a method is disclosed in which, in the SiC chip, an insulation layer having apertures reaching Schottky barrier electrodes of the units is provided, so that the Schottky barrier electrodes of defective units among the plurality of units are insulated by coated insulator, and a metal layer provided through the insulation layer becomes external output electrodes and wiring layers of the units, so that only the Schottky barrier electrodes of non-defective units are connected in parallel with each other, to obtain a large-scale semiconductor device in high yield even though an SiC wafer having many defects is used (for example, referred to as Patent Document 1).
  • the wiring layer for connecting the non-defective units on the SiC chip in parallel is not deposited in a sufficient thickness such as not thinner than several dozen ⁇ m, resistive loss of the layer increases.
  • the wiring layer is also formed on the insulation layer of the separator between the units, in order to keep the breakdown voltage high, deposition of the insulation layer must be formed to have a sufficient thickness such as not thinner than several dozen ⁇ m.
  • the thick insulation layer and wiring layer are provided on the SiC chip as described above, which increases mechanical and thermal stress, and as a resultant warpage of the SiC wafer increases; consequently, a problem has occurred in that manufacturing of the semiconductor device has become difficult, or the reliability of the semiconductor device has decreased.
  • An objective of the present invention which is made to solve such problems, is to obtain a semiconductor device in which excellent characteristics are achieved and reliability is improved, and to obtain a semiconductor-device manufacturing method by which the above described semiconductor device can be easily obtained in high yield.
  • a semiconductor device includes: a plurality of semiconductor units formed on a semiconductor chip; external output electrodes formed, for each unit, independently of each other on the semiconductor units; bumps selectively formed on the external output electrodes of, among the semiconductor units as including non-defective and defective units, the non-defective semiconductor units; and a wiring substrate provided with a wiring layer electrically connected to the bumps.
  • a semiconductor device includes: a plurality of semiconductor units formed on a semiconductor chip; external output electrodes formed, for each unit, independently of each other, on the semiconductor units; bumps selectively formed on the external output electrodes of, among the semiconductor units as including non-defective and defective units, the non-defective semiconductor units; and a wiring substrate provided with a wiring layer electrically connected to the bumps; therefore, it is effective that not only excellent characteristics is achieved but also reliability is improved.
  • an SiC wafer can also be used as the semiconductor wafer, which brings about effects that not only excellent characteristics is achieved but also reliability is improved.
  • FIG. 1 is a cross-sectional view illustrating a semiconductor device according to Embodiment 1 of the present invention
  • FIG. 2 is a plane view and a cross-sectional view illustrating an SiC chip according to the semiconductor device in Embodiment 1 of the present invention
  • FIG. 3 is plane views illustrating a wiring substrate member according to the semiconductor device in Embodiment 1 of the present invention.
  • FIG. 4 is views explaining steps of forming bumps associated with a method of manufacturing a semiconductor device according to Embodiment 2 of the present invention.
  • FIG. 5 is a perspective view explaining a step of connecting electrodes to a wiring layer in the method of manufacturing the semiconductor device according to Embodiment 2 of the present invention.
  • FIG. 6 is a view explaining a step of forming bumps associated with a method of manufacturing a semiconductor device according to Embodiment 3 of the present invention.
  • FIG. 7 is views explaining steps of forming bumps associated with a method of manufacturing a semiconductor device according to Embodiment 4 of the present invention.
  • FIG. 8 is a plane view illustrating an SiC chip and a plane view illustrating a wiring substrate member connected to the SiC chip, according to a semiconductor device in Embodiment 5 of the present invention
  • FIG. 9 is a perspective view explaining a mounting structure of the SiC chip and the wiring substrate member, according to the semiconductor device in Embodiment 5 of the present invention.
  • FIG. 10 is plane views illustrating installation states of bumps on a semiconductor unit formed on an SiC chip according to a semiconductor device in Embodiment 6 of the present invention.
  • FIG. 11 is plane views illustrating installation states of bumps on a semiconductor unit formed on an SiC chip according to a semiconductor device in Embodiment 7 of the present invention.
  • FIG. 12 is a cross-sectional view illustrating a conventional semiconductor device.
  • FIG. 1 is a cross-sectional view illustrating a semiconductor device according to Embodiment 1 of the present invention, in which on an SiC chip 9 as a semiconductor chip, a plurality of Schottky barrier diode units 10 is formed as semiconductor units, and the units 10 each have an independent external output electrode 4 .
  • bumps 11 Only on the external output electrodes 4 of non-defective units among the units 10 formed on the SiC chip 9 , are formed bumps 11 ; whose diameters are from several dozen to several hundred ⁇ m, composed of, for example, molten metals (Sn—Pb, Sn—Ag, Sn—Cu, Sn—Bi, Sn—Ag—Cu, Sn—Sg—Bi, Sn—Ag—Bi—Cu, Au—Sn, etc.); meanwhile, bumps are not formed on the external output electrodes 4 of defective units having low withstand voltage, or high leakage current.
  • molten metals Sn—Pb, Sn—Ag, Sn—Cu, Sn—Bi, Sn—Ag—Cu, Sn—Sg—Bi, Sn—Ag—Bi—Cu, Au—Sn, etc.
  • Shottky barrier side electrodes 3 are connected in parallel with each other, and to the exterior thereof passing through the external output electrodes 4 , the bumps 11 , and a wiring layer 13 and an external lead 13 a of a wiring substrate 12 , so that only the external output electrodes 4 of the non-defective units 10 are connected in parallel with each other.
  • a gap between the wiring substrate 12 and the SiC chip 9 is filled with underfill resin 19 , and the SiC chip 9 is fixed to a package substrate 16 using a die-bonding material 18 composed of molten-metal paste.
  • the surface of a back face electrode 6 of the SiC chip 9 is composed of an Au layer so that the molten metal is easy to fit into the electrode; accordingly, after the die-bonding material 18 has been coated on a wiring layer 17 of the package substrate 16 , the SiC chip 9 has been put on the die-bonding material, heating has been performed at a temperature of the melting point of the molten metal, and cooling has been performed, the molten-metal paste solidifies; consequently, the SiC chip 9 is fixed to the package substrate 16 , and thus the back face electrode 6 is also electrically connected to the wiring layer 17 of the package substrate 16 .
  • the wiring layer 17 is connected to an external lead 17 a , and thus the external lead 17 a becomes the common semiconductor-side-electrode output of the Schottky barrier diodes of the non-defective units 10 .
  • FIG. 12 is a cross-sectional view illustrating a conventional semiconductor device represented as a reference. That is, a chip is separated into a plurality of the units 10 inside the chip, and an insulating layer 55 having apertures reaching Schottky barrier electrodes 52 and 53 of the units 10 is provided on the chip. After an insulating material 51 has been applied onto the Schottky barrier electrodes 52 of the defective units among the plurality of units, so as to insulate the electrode, a metal layer 54 is provided on the insulating layers 55 , so as to serve as an external output electrode and a wiring layer of the units 10 ; then, only the Schottky barrier electrodes 53 of the non-defective units are connected in parallel with each other using the wiring layer.
  • the metal layer 54 is also formed on the insulating layers 55 as separators between the units 10 .
  • the SiC chip 9 represented in FIG. 1 can be obtained as described below. That is, an n-type SiC epitaxial layer 2 is deposited on an n + -type SiC wafer 1 a as a semiconductor wafer; next, a plurality of Shottky barrier electrodes 3 are formed by depositing and processing a metal such as Ti or Ni in several hundred nm on the layer, so as form the plurality of units 10 on the SiC wafer 1 a .
  • the external output electrodes 4 are formed by depositing and processing, for example, Al in a thickness of approximately 1 ⁇ m on the Schottky barrier electrodes 3 .
  • Cr—Ni—Au Cr—Ni—Au, etc. is further deposited.
  • a polyimide film is deposited in a thickness of approximately several ⁇ m, which serves as a protection film 5 provided with apertures corresponding to only part of the external output electrodes 4 , and on the back face of the n + -type SiC wafer 1 a , for example, nickel and gold are deposited as the back face electrode 6 .
  • the external output electrodes 4 are used as metal-side output electrodes of the units 10 , while the back face electrode 6 is used as a semiconductor-side output electrode; the units 10 inside the SiC wafer are judged, as described below, whether they are defective; an SiC-wafer unit is obtained by forming the bumps on the external output electrodes 4 of only non-defective units; and then, the wafer unit is segmented into the SiC chip 9 having the plurality of units 10 .
  • FIG. 2 a method is explained in which the units are arranged for the SiC wafer to attain a predetermined yield
  • FIG. 2 a is a plan view of the SiC chip 9 according to the semiconductor device of the embodiment
  • FIG. 2 b is a cross-sectional view along the line A-A of FIG. 2 a ; here, an example is represented in which, making explanation simple, the units 10 are arranged in four by four.
  • a semiconductor device having current capacity of, for example, 100 A is manufactured, because current capacity per unit area of the Schottky barrier electrodes 3 of the SiC chip 9 is approximately 3 A/mm 2 , a Schottky barrier area of approximately 6 square mm is needed.
  • each area of the Schottky barrier electrodes 3 of the units 10 according to this embodiment is set to a size in which a sufficient yield can be obtained. For example, even though the defect density is approximately 10/cm 2 , if the area of the Schottky barrier electrode 3 of the unit 10 is set at 1 mm square, the yield of not lower than 80% can be obtained; therefore, if a plurality of these units 10 is arranged on the SiC chip 9 , non-defective units can be obtained with probability not lower than 80%.
  • the SiC chip 9 when the units 10 are arranged in four by four, if the yield is 80%, approximately three units are calculated to be defective units.
  • the SiC chip 9 according to the embodiment only on the external output electrodes 4 of the non-defective units, are formed the bumps 11 whose diameters each are from several dozen to several hundred ⁇ m, composed of the molten metal, while the units having no bumps 11 in FIG. 2 are the defective units.
  • FIG. 3 is a plan view illustrating a wiring substrate member composed of a wiring substrate provided with a wiring layer according to the semiconductor device of the embodiment, and the member constitutes a semiconductor device, being connected with the SiC chip 9 on which the bumps 11 represented in FIG. 2 are formed.
  • FIG. 3 a represents a case in which the wiring layer 13 is formed, corresponding to at least a region where the bumps 11 are formed on the SiC chip 9 , on the face of the wiring substrate 12 made of, for example, ceramics and resin, and in which the wiring layer 13 is connected to the external lead 13 a .
  • the wiring layer 13 and the external output electrodes 4 are electrically connected with each other by the bumps 11 , only the electrodes of the non-defective units on which the bumps 11 are formed are connected in parallel with each other.
  • the units 10 are arranged keeping an inter-unit space not shorter than 1 mm, in manufacturing semiconductor devices using silicon wafers, manufacturing equipment can be used, which is best optimized to form a pattern whose width is from several hundred ⁇ m to several mm, and thickness is from several dozen to several hundred ⁇ m, in the process of mounting silicon chips on wiring substrates; therefore, a pattern of the wiring layer 13 of the wiring substrate 12 according to this embodiment can be easily manufactured by using the above manufacturing equipment and forming technology, so that the wiring layer 13 can also be easily formed in a thickness of from several dozen to several hundred ⁇ m, which consequently enables wiring electrical resistance to be relatively low.
  • the wiring layer 13 may also be a simple pattern formed on the entire surface of the wiring substrate 12 as represented in FIG. 3 b ; thereby, manufacturing steps of the wiring substrate 12 can be simplified.
  • the device is excellent in high-voltage, large-current, and high-temperature operational characteristics, and therefore can be used as an electric-power semiconductor device.
  • the semiconductor device according to this embodiment can be obtained by connecting the SiC chip 9 with the wiring substrate member represented in FIG.
  • the wiring layer 13 is too near to the SiC chip 9 , for example, discharging occurs on the separators between the units 10 , and each separation withstand voltage is adversely affected; however, because the connection is performed by the bumps 11 , the wiring layer 13 can be apart from the SiC chip 9 by a distance equivalent to the size of the bump 11 (the size from several dozen to several hundred ⁇ m, that is, the diameter of the bump 11 ), which can consequently easily realize withstand voltage higher than that of the conventional semiconductor device represented in FIG. 12 . Moreover, withstand voltage of the units 10 can be prevented from decreasing, which occurred in the above conventional semiconductor device due to forming the metal layer 54 on the insulating layer 55 of the separators between the units. In the conventional semiconductor device illustrated in FIG.
  • an oxide film such as a PSG (phosphosilicate glass) film, having a thickness of approximately 1 ⁇ m, which has been deposited by the CVD (chemical vapor deposition) method is used as the insulating layer 55 ; however, because the breakdown voltage of the PSG film is approximately 2-6 MV/cm, the withstand voltage is 200-600 V; therefore, a semiconductor device whose rated voltage is in the order of kV cannot be realized. In order to manufacture a semiconductor device whose withstand voltage is 5 kV, the necessary insulating layer thickness becomes 8-25 ⁇ m; consequently, the deposition becomes difficult.
  • a PSG phosphosilicate glass
  • the semiconductor device according to this embodiment can have ten times to hundred times as high rated voltage as that of the conventional device.
  • the wiring-layer resistance of an electric-power semiconductor device must be sufficiently low comparing to its ON resistance, and is desired to be not higher than 5 m ⁇ .
  • the metal layer of the conventional semiconductor device illustrated in FIG. 12 because semiconductor-device manufacturing equipment using the silicon wafer is optimized so as to enable a film to be deposited in not thicker than several ⁇ m, aluminum-group wiring material having a thickness of not thicker than several ⁇ m is usually used.
  • the ratio between the length and width of the wiring is 10:1
  • the wiring resistance becomes 100 m ⁇ ; therefore, in order to make resistance not higher than 5 m ⁇ , a thick film having a thickness of some 60 ⁇ m becomes necessary, which makes the deposition difficult.
  • the wiring layer 13 of the wiring substrate 12 has been formed on the wiring substrate 12 other than the SiC chip 9 , manufacturing process can be applied, in which silicon chips are mounted on a wiring substrate.
  • the wiring resistance can also be made not higher than 0.5 m ⁇ , and even if the ratio of the length and the width of the wiring is set at 100:1, because the resistance becomes not higher than 5 m ⁇ , more units can be connected in parallel with each other.
  • current capacity can be made 20-200 times as large as that of the conventional device.
  • FIG. 4 is an explanatory view illustrating a step of forming bumps on the SiC wafer 1 a as the semiconductor wafer, according to a method of manufacturing a semiconductor device in Embodiment 2 of the present invention, in which data of a wafer test for determining whether the units 10 formed on the SiC wafer 1 a are good or no good (hereinafter referred to as simply a wafer test) is transmitted to a controller 21 of a solder shooter, and the bumps 11 composed of molten metal are selectively formed, using the solder shooter, only on the external output electrodes 4 of the non-defective units.
  • a wafer test for determining whether the units 10 formed on the SiC wafer 1 a are good or no good
  • the wafer test is carried out using a wafer tester 20 , in which by connecting the back face electrode 6 of the SiC wafer 1 a with the stage (not illustrated) of the wafer tester 20 , and electrically connecting to the external output electrode 4 of each unit 10 using a probe, etc., the check is performed whether each of the units 10 is good or no good ( FIG. 4 a ).
  • the bumps 11 are formed using a device that drips the molten metal (hereinafter referred to as a “solder shooter”); here, the solder shooter is a device, operating similar to an ink-jet-type printer, for dripping on a predetermined position a liquid droplet of the molten metal instead of the ink of the printer, and the bumps 11 are formed using the solder shooter, based on the wafer-test data obtained by the wafer tester 20 .
  • the solder shooter is a device, operating similar to an ink-jet-type printer, for dripping on a predetermined position a liquid droplet of the molten metal instead of the ink of the printer, and the bumps 11 are formed using the solder shooter, based on the wafer-test data obtained by the wafer tester 20 .
  • liquid droplets of the molten metal are dripped from a nozzle 23 of the head 22 to the external output electrodes 4 of the non-defective units 10 .
  • the mean diameter of the droplets is determined by the pulse signal and the nozzle diameter, particles having a mean diameter of several dozen-several hundred ⁇ m can be formed, and molten-metal bumps are formed on the SiC wafer 1 a by dripping the molten-metal particles after the SiC wafer 1 a has been positioned apart from the head 22 several mm.
  • the bump 11 is formed in a desired position ( FIG. 4 b ).
  • the external output electrodes are in some cases made of Al, for example, Cr—Ni—Au may be deposited.
  • the shape of the bumps 11 depends on the temperature of the SiC wafer 1 a ; for example, the liquid droplet of the molten metal solidifies soon after contacting the SiC wafer 1 a at room temperature, and then a spherical or semi-spherical bump is formed.
  • the temperature of the SiC wafer 1 a is increased by some degrees, up to near the melting point of the molten metal, the metal layer can also spread over the whole area of the external output electrode of the unit.
  • a hill-shaped bump spreading over the whole area of the external output electrode can also be formed.
  • the wafer-test data is used, and equipment such as a solder shooter that can form bumps on the electrodes of non-defective units is used, because neither deposition nor processing of the bump material is needed, manufacturing process becomes simple so that cost can be reduced.
  • FIG. 5 is a perspective view explaining a connection step of a wiring layer, according to a method of manufacturing a semiconductor device in this embodiment.
  • the underfill resin 19 is used in order to fix the SiC chip 9 and improve the reliability of the bump connecting portion; however, the resin may be injected between the SiC chip 9 and the wiring substrate 12 after the bumps 11 are connected, or may be applied on the chip before the connection.
  • the SiC chip 9 is fixed to the package substrate 16 , in order to prevent the bumps 11 from melting due to too high heating temperature or too long heating duration, metal having higher melting point than that of the metal used as the die-bonding material 18 is used as the bumps 11 .
  • the die-bonding material 18 for connecting the back face electrode 6 with the wiring layer 17 of the package substrate 16 is not completely solidified, but temporarily fixed and then the bumps 11 and the wiring layer 13 are connected with each other by heating after the wiring substrate 12 is mounted on the SiC chip 9 , the die-bonding material 18 that is back-face molten-metal paste may be solidified.
  • the size of each aperture of the protection film 5 may be made to be approximately the same final size as the bump of the external output electrodes 4 , so as to confine the metal within the aperture even if the molten metal melts.
  • the aperture diameter is set at 100 ⁇ m, and a molten-metal particle having a diameter of approximately 80 ⁇ m is placed on the electrode, when the die-bonding material 18 that is the back-face molten-metal paste is solidified, the molten-metal particle on the external output electrode 4 also melts; consequently, a semi-spherical bump is formed on the aperture.
  • electrically conductive die-bonding material for example, a conductive adhesive in which conductive filler such as silver filler is admixed with a resin adhesive may be used.
  • FIG. 6 is a view explaining a bump forming process according to the manufacturing method for a semiconductor device of this embodiment.
  • a gold wire 32 is pressed and fixed, using a capillary 33 , only to each of the external output electrodes 4 of the non-defective units by a controller 31 , and then the wire 32 is cut off; thereby, the gold bumps 34 are formed.
  • the SiC wafer 1 a is, for example, heated up to approximately 100° C., and in some cases, not only the capillary is pressurized but also ultrasonic waves are applied thereto.
  • the bumps can be selectively formed, based on the wafer-test data, only on the non-defective units, deposition or processing of the bump material are not needed; therefore, the process becomes simple and cost can be reduced.
  • FIG. 7 is a view explaining a bump forming process according to a manufacturing method for a semiconductor device of Embodiment 4.
  • the head, having the molten-metal bath, in the solder shooter is replaced with an exposure head 42 and used.
  • the exposure head 42 can radiate spot light whose diameter is from ten to several hundred ⁇ m, in which, regarding the structure, for example, light is introduced from a UV-lamp light source such as a halogen lamp to the exposure head 42 through an optical fiber, and ON/OFF operation of the exposure is enabled by providing a shutter 43 at the light exiting end of the optical fiber.
  • a UV-lamp light source such as a halogen lamp
  • Photo-reactive resin 44 such as photoresist has been applied on the SiC wafer after the wafer test; thus, based on the wafer-test data, when the exposure head 42 is positioned over each of the external output electrodes 4 of the non-defective units, a controller 41 sequentially outputs ON signals to the shutter 43 , and the photo-reactive resin 44 on the non-defective units is photo-reacted; consequently, photo-reacted portions 47 are obtained ( FIG. 7 a ).
  • the photo-reacted portions 47 open after developing the resist; then, a molten-metal film 45 is deposited, by a method such as the vacuum evaporation, on the photo-reactive resin 44 having apertures corresponding only to the external output electrodes 4 of the non-defective units ( FIG. 7 b ).
  • the photo-reactive resin 44 is removed using organic solvent, etc., and thus, bumps 46 can be formed only on the external output electrodes 4 of the non-defective units ( FIG. 7 c ).
  • the needed mean diameter of the bumps is from several dozen to several hundred ⁇ m, such resolution as that in the above photoengraving technology using the mask or the direct drawing system is not needed; therefore, as this embodiment, because the bumps can be formed by using a modified solder shooter, equipment investment is generally small.
  • a semiconductor device according to Embodiment 5 of the present invention is similar to that in Embodiment 1 except that SiC vertical MOSFET semiconductor devices are formed, as semiconductor units 10 according to a semiconductor device in Embodiment 1, instead of electric power elements of the SiC Schottky barrier diodes.
  • FIG. 8 a is a plane view illustrating the SiC chip 9 according to a semiconductor device in Embodiment 5 of the present invention, which represents, as an example of the units 10 , the SiC vertical MOSFET semiconductor devices being arranged in four by four, similar to Embodiment 1.
  • external output electrodes 7 as gate electrodes and external output electrodes 8 as source electrodes are provided on the front face side of the SiC chip 9 , while the drain electrode is provided on the back face thereof.
  • the bumps 11 are formed only on the external output electrodes 7 , as the gate electrodes, and the external output electrodes 8 , as the source electrodes, of the non-defective units; here, in FIG. 8 a , units having no bumps 11 are defective units.
  • FIG. 8 b is a plane view illustrating a wiring substrate member connected to the SiC chip 9 represented in FIG. 8 a , in which a wiring layer 14 is formed, on the front face of the wiring substrate 12 composed of ceramics or resin, in a comb-shaped pattern corresponding to the arranging intervals of the bumps 11 on the external output electrodes 8 , as the source electrodes, of the SiC chip 9 , the wiring layer 14 is connected to an external lead 14 a , and a wiring layer 15 is formed in a comb-shaped pattern corresponding to the arranging intervals of the bumps 11 on the external output electrodes 7 , as the gate electrodes, of the SiC chip 9 .
  • the wiring layer 15 is connected to an external lead 15 a , and the arranging intervals of the wiring layer 15 are equal to those of each unit and are not narrower than 1 mm; meanwhile, in manufacturing of semiconductor devices using silicon wafers, equipment is generally used that is most optimized to forming a pattern whose width is from several hundred ⁇ m to several mm, and whose thickness is from several dozen to several hundred ⁇ m, in the process of mounting the silicon chips on the wiring substrate; therefore, by the above manufacturing equipment and forming technology, the wiring layers 14 and 15 can be easily formed with the thickness of several dozen-several hundred ⁇ m, and the external leads 14 a and 15 a can also be integrally formed.
  • the external leads 14 a and 15 a are electrically connected to the source electrodes and the gate electrodes of the units 10 , respectively.
  • FIG. 9 is a perspective view explaining a mounting structure of the SiC chip 9 and the wiring substrate member, in which on the front face of the package substrate 16 is formed the wiring layer 17 that not only fixes the SiC chip 9 but also electrically connects to the back face electrode.
  • the wiring layer 17 is connected to the external lead 17 a .
  • the drain electrode of the units is connected to the exterior thereof from the back face electrode of the chip 9 through the wiring layer 17 and the external lead 17 a of the package substrate 16
  • the source electrodes are connected to the exterior from the bumps 11 through the wiring layer 14 and the external lead 14 a of the wiring substrate 12
  • the gate electrodes are connected to the exterior from the bumps 11 through the wiring layer 15 and the external lead 15 a of the wiring substrate 13 . Because the bumps 11 are not formed on the defective units, only the source electrodes and the gate electrodes of the non-defective units are respectively connected in parallel each other.
  • each of the wiring layers 14 and 15 can be formed with a sufficient thickness using copper whose electrical resistance is relatively low, the wiring resistance can be easily reduced, and current capacity can be made 20-200 times as large as that of the conventional one; therefore, further effects described below can also be obtained. That is, in the SiC vertical MOSFET semiconductor device according to this embodiment, as illustrated in FIG. 8 and FIG.
  • 10 b illustrates a case in which the unit 10 has two kinds of external output electrodes 7 and 8 on the front face thereof as the SiC vertical MOSFET semiconductor device; that is, although, in Embodiments 1-5, examples are represented in which a bump is arranged on each of the external output electrodes of the units, another case is represented in which a plurality of bumps is arranged in this embodiment.
  • connection resistance can also be decreased by increasing the number of the bumps on the external output electrode of the source electrodes that can flow current more than that of the external output electrodes 7 of the gate electrodes that cannot flow current.
  • Embodiment 7 represents a semiconductor device similar to that in Embodiment 1 or in Embodiment 5, except for arrangement states of the bumps in Embodiment 1 or in Embodiment 5 being as in FIG. 11 .
  • FIG. 11 is plane views illustrating arrangement states of bumps on units formed on the SiC chip 9 , according to the semiconductor device in Embodiment 6 of the present invention.
  • FIG. 11 a illustrates a case in which the units 10 have one kind of external output electrode 4 on the front face thereof as the Schottky barrier diodes, while FIG.
  • 11 b illustrates a case in which the units 10 have two kinds of external output electrodes 7 and 8 on the front face thereof as the SiC vertical MOSFET semiconductor device; that is, although, in Embodiments 1-6, examples in which bump are formed on the external output electrodes of the non-defective units are represented, a case is represented in which dummy bumps 11 a whose objective is not to connect the external output electrodes with the wiring layers of the units are formed on a region other than the external output electrodes 4 of the SiC chip.
  • the dummy bumps 11 a heat generated in the SiC chip can be effectively dissipated to the wiring substrate side, and the stress of the bumps 11 for electrical connection can also be relaxed by arrangement of the dummy bumps 11 a .
  • the dummy bumps 11 a are not electrically connected to the external output electrodes of the units, the dummy bumps may be connected to the wiring layers 14 and 15 .
  • an electrode pad that is electrically separated from the wiring layers 14 and 15 may be provided in a position facing the dummy bumps 11 a on the wiring substrate, and may be connected to the dummy bumps 11 a .
  • the dummy bumps have been arranged between the units as described above, the dummy bumps may also be arranged outside the unit allay (the periphery of the chips).

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