CN102842556A - 双面外露的半导体器件及其制作方法 - Google Patents
双面外露的半导体器件及其制作方法 Download PDFInfo
- Publication number
- CN102842556A CN102842556A CN201110185096XA CN201110185096A CN102842556A CN 102842556 A CN102842556 A CN 102842556A CN 201110185096X A CN201110185096X A CN 201110185096XA CN 201110185096 A CN201110185096 A CN 201110185096A CN 102842556 A CN102842556 A CN 102842556A
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- Prior art keywords
- chip
- lead frame
- wafer
- semiconductor device
- lead
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000009977 dual effect Effects 0.000 title abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 37
- 238000004806 packaging method and process Methods 0.000 claims description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 13
- 229910017083 AlN Inorganic materials 0.000 claims description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 12
- 238000000227 grinding Methods 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 239000004033 plastic Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 6
- 239000004014 plasticizer Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110185096.XA CN102842556B (zh) | 2011-06-21 | 2011-06-21 | 双面外露的半导体器件及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110185096.XA CN102842556B (zh) | 2011-06-21 | 2011-06-21 | 双面外露的半导体器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102842556A true CN102842556A (zh) | 2012-12-26 |
CN102842556B CN102842556B (zh) | 2015-04-22 |
Family
ID=47369776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110185096.XA Active CN102842556B (zh) | 2011-06-21 | 2011-06-21 | 双面外露的半导体器件及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN102842556B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681525A (zh) * | 2013-11-27 | 2015-06-03 | 万国半导体股份有限公司 | 一种多芯片叠层的封装结构及其封装方法 |
CN107112307A (zh) * | 2015-02-13 | 2017-08-29 | 迪尔公司 | 具有一个或多个散热器的电子组件 |
CN107301993A (zh) * | 2017-06-08 | 2017-10-27 | 太极半导体(苏州)有限公司 | 一种增加非功能性芯片的封装结构及其制作工艺 |
CN110335821A (zh) * | 2019-06-03 | 2019-10-15 | 通富微电子股份有限公司 | 一种具有双面散热的半导体器件及其封装方法 |
WO2022179229A1 (zh) * | 2021-12-02 | 2022-09-01 | 深圳麦克韦尔科技有限公司 | 发热体模组及其制备方法、封装模组和电子雾化装置 |
WO2022233240A1 (zh) * | 2021-05-07 | 2022-11-10 | 苏州汇川技术有限公司 | 功率半导体器件的封装结构与功率模块 |
CN116259549A (zh) * | 2022-12-30 | 2023-06-13 | 深圳真茂佳半导体有限公司 | 一种双面散热功率半导体的封装方法及封装结构 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1288256A (zh) * | 1999-09-13 | 2001-03-21 | 维谢伊因特泰克诺洛吉公司 | 半导体器件的芯片规模表面安装封装及其制造方法 |
US20030059979A1 (en) * | 2001-09-25 | 2003-03-27 | Yasunari Ukita | Semiconductor device-manufacturing method |
US20050029646A1 (en) * | 2003-08-07 | 2005-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for dividing substrate |
CN1685504A (zh) * | 2002-09-30 | 2005-10-19 | 费查尔德半导体有限公司 | 包含漏极夹的半导体管芯封装 |
US20050263859A1 (en) * | 2004-05-27 | 2005-12-01 | Semiconductor Components Industries, Llc. | Semiconductor device formed having a metal layer for conducting the device current and for high contrast marking and method thereof |
US20060131745A1 (en) * | 2004-12-14 | 2006-06-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
US7166496B1 (en) * | 2005-08-17 | 2007-01-23 | Ciclon Semiconductor Device Corp. | Method of making a packaged semiconductor device |
US20070108564A1 (en) * | 2005-03-30 | 2007-05-17 | Wai Kwong Tang | Thermally enhanced power semiconductor package system |
US20070215980A1 (en) * | 2006-03-15 | 2007-09-20 | Ralf Otremba | Vertical Semiconductor Power Switch, Electronic Component and Methods of Producing the Same |
US20080191359A1 (en) * | 2007-02-09 | 2008-08-14 | Adolf Koller | Panel, semiconductor device and method for the production thereof |
US20080242052A1 (en) * | 2007-03-30 | 2008-10-02 | Tao Feng | Method of forming ultra thin chips of power devices |
-
2011
- 2011-06-21 CN CN201110185096.XA patent/CN102842556B/zh active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1288256A (zh) * | 1999-09-13 | 2001-03-21 | 维谢伊因特泰克诺洛吉公司 | 半导体器件的芯片规模表面安装封装及其制造方法 |
US20030059979A1 (en) * | 2001-09-25 | 2003-03-27 | Yasunari Ukita | Semiconductor device-manufacturing method |
CN1685504A (zh) * | 2002-09-30 | 2005-10-19 | 费查尔德半导体有限公司 | 包含漏极夹的半导体管芯封装 |
US20050029646A1 (en) * | 2003-08-07 | 2005-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for dividing substrate |
US20050263859A1 (en) * | 2004-05-27 | 2005-12-01 | Semiconductor Components Industries, Llc. | Semiconductor device formed having a metal layer for conducting the device current and for high contrast marking and method thereof |
US20060131745A1 (en) * | 2004-12-14 | 2006-06-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
US20070108564A1 (en) * | 2005-03-30 | 2007-05-17 | Wai Kwong Tang | Thermally enhanced power semiconductor package system |
US7166496B1 (en) * | 2005-08-17 | 2007-01-23 | Ciclon Semiconductor Device Corp. | Method of making a packaged semiconductor device |
US20070215980A1 (en) * | 2006-03-15 | 2007-09-20 | Ralf Otremba | Vertical Semiconductor Power Switch, Electronic Component and Methods of Producing the Same |
US20080191359A1 (en) * | 2007-02-09 | 2008-08-14 | Adolf Koller | Panel, semiconductor device and method for the production thereof |
US20100264523A1 (en) * | 2007-02-09 | 2010-10-21 | Infineon Technologies Ag | Panel, Semiconductor Device and Method for the Production Thereof |
US20080242052A1 (en) * | 2007-03-30 | 2008-10-02 | Tao Feng | Method of forming ultra thin chips of power devices |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681525A (zh) * | 2013-11-27 | 2015-06-03 | 万国半导体股份有限公司 | 一种多芯片叠层的封装结构及其封装方法 |
CN104681525B (zh) * | 2013-11-27 | 2017-09-08 | 万国半导体股份有限公司 | 一种多芯片叠层的封装结构及其封装方法 |
CN107112307A (zh) * | 2015-02-13 | 2017-08-29 | 迪尔公司 | 具有一个或多个散热器的电子组件 |
CN107301993A (zh) * | 2017-06-08 | 2017-10-27 | 太极半导体(苏州)有限公司 | 一种增加非功能性芯片的封装结构及其制作工艺 |
CN110335821A (zh) * | 2019-06-03 | 2019-10-15 | 通富微电子股份有限公司 | 一种具有双面散热的半导体器件及其封装方法 |
CN110335821B (zh) * | 2019-06-03 | 2021-07-09 | 通富微电子股份有限公司 | 一种具有双面散热的半导体器件及其封装方法 |
WO2022233240A1 (zh) * | 2021-05-07 | 2022-11-10 | 苏州汇川技术有限公司 | 功率半导体器件的封装结构与功率模块 |
WO2022179229A1 (zh) * | 2021-12-02 | 2022-09-01 | 深圳麦克韦尔科技有限公司 | 发热体模组及其制备方法、封装模组和电子雾化装置 |
CN116259549A (zh) * | 2022-12-30 | 2023-06-13 | 深圳真茂佳半导体有限公司 | 一种双面散热功率半导体的封装方法及封装结构 |
CN116259549B (zh) * | 2022-12-30 | 2023-10-31 | 深圳真茂佳半导体有限公司 | 一种双面散热功率半导体的封装方法及封装结构 |
Also Published As
Publication number | Publication date |
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CN102842556B (zh) | 2015-04-22 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160909 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: The British West Indies Dakaiman Cayman Island KY1-1107 P.O. Box 709 No. 122 Marie street, and the wind floor Patentee before: Alpha and Omega Semiconductor (Cayman) Ltd. |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160919 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: Bermuda Hamilton Church 2 Cola Lunden House Street Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. Effective date of registration: 20160919 Address after: Bermuda Hamilton Church 2 Cola Lunden House Street Patentee after: ALPHA & OMEGA SEMICONDUCTOR, Ltd. Address before: The British West Indies Dakaiman Cayman Island KY1-1107 P.O. Box 709 No. 122 Marie street, and the wind floor Patentee before: Alpha and Omega Semiconductor (Cayman) Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Semiconductor component with dual surfaces exposed and manufacturing method of semiconductor component Effective date of registration: 20191210 Granted publication date: 20150422 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20150422 Pledgee: Chongqing Branch of China Development Bank Pledgor: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Registration number: Y2019500000007 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |