US20050176259A1 - Method for removing photoresist - Google Patents

Method for removing photoresist Download PDF

Info

Publication number
US20050176259A1
US20050176259A1 US10/512,586 US51258604A US2005176259A1 US 20050176259 A1 US20050176259 A1 US 20050176259A1 US 51258604 A US51258604 A US 51258604A US 2005176259 A1 US2005176259 A1 US 2005176259A1
Authority
US
United States
Prior art keywords
photoresist
stripping
substrate
low
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/512,586
Other languages
English (en)
Inventor
Shigeru Yokoi
Kazumasa Wakiya
Takayuki Haraguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Assigned to TOKYO OHKA KOGYO CO., LTD. reassignment TOKYO OHKA KOGYO CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HARAGUCHI, TAKAYUKI, WAKIYA, KAZUMASA, YOKOI, SHIGERU
Publication of US20050176259A1 publication Critical patent/US20050176259A1/en
Priority to US11/889,394 priority Critical patent/US20070298619A1/en
Priority to US12/219,120 priority patent/US20080280452A1/en
Priority to US12/458,992 priority patent/US20090291565A1/en
Priority to US12/883,592 priority patent/US8354215B2/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
US10/512,586 2002-04-26 2003-04-25 Method for removing photoresist Abandoned US20050176259A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US11/889,394 US20070298619A1 (en) 2002-04-26 2007-08-13 Method for stripping photoresist
US12/219,120 US20080280452A1 (en) 2002-04-26 2008-07-16 Method for stripping photoresist
US12/458,992 US20090291565A1 (en) 2002-04-26 2009-07-29 Method for stripping photoresist
US12/883,592 US8354215B2 (en) 2002-04-26 2010-09-16 Method for stripping photoresist

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002-125471 2002-04-26
JP2002125471 2002-04-26
JP2002308993A JP3516446B2 (ja) 2002-04-26 2002-10-23 ホトレジスト剥離方法
JP2002-308993 2002-10-23
PCT/JP2003/005336 WO2003091806A1 (fr) 2002-04-26 2003-04-25 Procede de retrait de photoresist

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/889,394 Continuation US20070298619A1 (en) 2002-04-26 2007-08-13 Method for stripping photoresist

Publications (1)

Publication Number Publication Date
US20050176259A1 true US20050176259A1 (en) 2005-08-11

Family

ID=29272357

Family Applications (5)

Application Number Title Priority Date Filing Date
US10/512,586 Abandoned US20050176259A1 (en) 2002-04-26 2003-04-25 Method for removing photoresist
US11/889,394 Abandoned US20070298619A1 (en) 2002-04-26 2007-08-13 Method for stripping photoresist
US12/219,120 Abandoned US20080280452A1 (en) 2002-04-26 2008-07-16 Method for stripping photoresist
US12/458,992 Abandoned US20090291565A1 (en) 2002-04-26 2009-07-29 Method for stripping photoresist
US12/883,592 Expired - Lifetime US8354215B2 (en) 2002-04-26 2010-09-16 Method for stripping photoresist

Family Applications After (4)

Application Number Title Priority Date Filing Date
US11/889,394 Abandoned US20070298619A1 (en) 2002-04-26 2007-08-13 Method for stripping photoresist
US12/219,120 Abandoned US20080280452A1 (en) 2002-04-26 2008-07-16 Method for stripping photoresist
US12/458,992 Abandoned US20090291565A1 (en) 2002-04-26 2009-07-29 Method for stripping photoresist
US12/883,592 Expired - Lifetime US8354215B2 (en) 2002-04-26 2010-09-16 Method for stripping photoresist

Country Status (8)

Country Link
US (5) US20050176259A1 (ja)
EP (1) EP1550912A4 (ja)
JP (1) JP3516446B2 (ja)
KR (1) KR100781925B1 (ja)
CN (1) CN1650235A (ja)
AU (1) AU2003235130A1 (ja)
TW (1) TW200307186A (ja)
WO (1) WO2003091806A1 (ja)

Cited By (35)

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US20040131980A1 (en) * 2002-07-24 2004-07-08 Kei Hayasaki Method for forming a pattern and substrate-processing apparatus
US20050048397A1 (en) * 2003-08-27 2005-03-03 Lg.Philips Lcd Co., Ltd. Composition and method for removing copper-compatible resist
US20060154839A1 (en) * 2003-08-19 2006-07-13 Mallinckrodt Baker Inc. Stripping and cleaning compositions for microelectronics
US20070111912A1 (en) * 2005-10-28 2007-05-17 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US20070129274A1 (en) * 2005-12-06 2007-06-07 Samsung Electronics Co., Ltd. Manufacturing and cleansing of thin film transistor panels
US20070243773A1 (en) * 2005-10-28 2007-10-18 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and method for its use
US20090036344A1 (en) * 2007-08-03 2009-02-05 Kimberly Dona Pollard Reduced metal etch rates using stripper solutions containing metal salts
US20090047609A1 (en) * 2007-08-15 2009-02-19 Atkinson John M Metal conservation with stripper solutions containing resorcinol
US20090209104A1 (en) * 2006-07-05 2009-08-20 Tadahiro Kimura Polishing slurry for cmp, and polishing method
US20100022426A1 (en) * 2005-05-12 2010-01-28 Shigeru Yokoi Photoresist stripping solution
US20100089426A1 (en) * 2005-10-28 2010-04-15 Phenis Michael T Dynamic multipurpose composition for the removal of photoresists and method for its use
US20100221503A1 (en) * 2008-06-24 2010-09-02 Dynaloy Llc Stripper solutions effective for back-end-of-line operations
WO2010127943A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
WO2010127942A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
US20110266494A1 (en) * 2004-04-29 2011-11-03 Soon Sung Yoo Stripper Solution and Method of Manufacturing Liquid Crystal Display Using the Same
EP2428541A1 (en) 2010-09-08 2012-03-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
WO2012032466A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
WO2012032469A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
US8466035B2 (en) 2010-03-08 2013-06-18 Dynaloy, Llc Methods and compositions for doping silicon substrates with molecular monolayers
US9028708B2 (en) 2009-11-30 2015-05-12 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
US9045717B2 (en) 2010-01-29 2015-06-02 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
US9070632B2 (en) 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
US9275851B2 (en) 2011-03-21 2016-03-01 Basf Se Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US20160304815A1 (en) * 2015-04-20 2016-10-20 Intermolecular, Inc. Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides
US9496146B2 (en) 2011-03-11 2016-11-15 Basf Se Method for forming through-base wafer vias
US9524874B2 (en) 2010-12-10 2016-12-20 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
KR101799591B1 (ko) * 2010-05-19 2017-12-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
US20180264492A1 (en) * 2013-08-27 2018-09-20 Tokyo Electron Limited Substrate processing method
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
US10290511B2 (en) 2012-08-08 2019-05-14 SCREEN Holdings Co., Ltd Substrate treatment apparatus and substrate treatment method
US10392531B2 (en) 2009-11-30 2019-08-27 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

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JP5057647B2 (ja) 2004-07-02 2012-10-24 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造装置
CN101044602A (zh) * 2004-09-17 2007-09-26 Fsi国际公司 使用臭氧处理类晶片物体
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
CN100565337C (zh) * 2005-08-22 2009-12-02 昆明物理研究所 一种铂钛金属薄膜图形化方法
KR101285123B1 (ko) * 2005-08-25 2013-07-19 주식회사 동진쎄미켐 투명 전도막 및 레지스트 제거용 박리액 조성물
KR101221560B1 (ko) * 2005-09-02 2013-01-14 주식회사 동진쎄미켐 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물
TWI425324B (zh) * 2005-12-23 2014-02-01 Anji Microelectronics Co Ltd 可去除光阻層之組合物
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KR100849366B1 (ko) * 2006-08-24 2008-07-31 세메스 주식회사 기판을 처리하는 장치 및 방법
JP5018098B2 (ja) * 2007-01-19 2012-09-05 東ソー株式会社 配線工程用レジストの剥離方法
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KR20110028109A (ko) * 2009-09-11 2011-03-17 동우 화인켐 주식회사 세정액 조성물
CN102044405B (zh) * 2009-10-13 2012-08-08 中芯国际集成电路制造(上海)有限公司 多芯片封装体中芯片的分离方法
JP5702075B2 (ja) * 2010-03-26 2015-04-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅配線半導体用洗浄剤
JP5404459B2 (ja) * 2010-02-08 2014-01-29 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
CN102254810A (zh) * 2011-07-05 2011-11-23 上海宏力半导体制造有限公司 半导体器件制备过程中光阻的去除方法
CN102427039A (zh) * 2011-11-02 2012-04-25 上海宏力半导体制造有限公司 光阻去除方法
JP6162711B2 (ja) * 2011-11-16 2017-07-12 フィールド アップグレーディング リミテッド アルカリ金属を使用する石油原料の改質
JP6412377B2 (ja) * 2013-09-11 2018-10-24 花王株式会社 樹脂マスク層用洗浄剤組成物及び回路基板の製造方法
CN104658899B (zh) * 2013-11-22 2017-11-10 中芯国际集成电路制造(上海)有限公司 一种蚀刻栅极介电层的方法
US9085542B1 (en) 2014-06-12 2015-07-21 General Electric Company Method for synthesis of N-methyl piperazine diphenolamide and related composition
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
US10072237B2 (en) * 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
KR101711808B1 (ko) 2015-12-23 2017-03-06 한국원자력연구원 세슘화합물의 제거율이 높은 전해환원공정용 연료파편 제조 방법
EP3663857A4 (en) * 2017-08-03 2020-09-09 Huaying Research Co., Ltd SOLUTION FOR RELEASE OF PHOTO LACQUER AND PROCESS FOR RELEASE OF PHOTO LACQUER
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JP6684998B1 (ja) * 2019-03-25 2020-04-22 パナソニックＩｐマネジメント株式会社 レジスト剥離液
US11378886B2 (en) * 2020-09-29 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removing resist layer, and method of manufacturing semiconductor
KR102246300B1 (ko) * 2021-03-19 2021-04-30 제이엔에프 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
CN113589662B (zh) * 2021-07-30 2022-07-12 浙江奥首材料科技有限公司 一种组合物、剥离液及其在剥离光刻胶或光刻胶残余物中的应用和剥离方法
CN115469516B (zh) * 2022-11-03 2023-03-24 江苏奥首材料科技有限公司 一种用于三五族半导体化合物光刻胶的剥离剂、其制备方法及用途

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US7364839B2 (en) * 2002-07-24 2008-04-29 Kabushiki Kaisha Toshiba Method for forming a pattern and substrate-processing apparatus
US20040131980A1 (en) * 2002-07-24 2004-07-08 Kei Hayasaki Method for forming a pattern and substrate-processing apparatus
US20060154839A1 (en) * 2003-08-19 2006-07-13 Mallinckrodt Baker Inc. Stripping and cleaning compositions for microelectronics
US7928046B2 (en) * 2003-08-19 2011-04-19 Avantor Performance Materials, Inc. Stripping and cleaning compositions for microelectronics
US20050048397A1 (en) * 2003-08-27 2005-03-03 Lg.Philips Lcd Co., Ltd. Composition and method for removing copper-compatible resist
US7384900B2 (en) * 2003-08-27 2008-06-10 Lg Display Co., Ltd. Composition and method for removing copper-compatible resist
US20110266494A1 (en) * 2004-04-29 2011-11-03 Soon Sung Yoo Stripper Solution and Method of Manufacturing Liquid Crystal Display Using the Same
US20100022426A1 (en) * 2005-05-12 2010-01-28 Shigeru Yokoi Photoresist stripping solution
US8114825B2 (en) * 2005-05-12 2012-02-14 Tokyo Ohka Kogyo Co., Ltd. Photoresist stripping solution
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US20090186793A1 (en) * 2005-10-28 2009-07-23 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US9243218B2 (en) 2005-10-28 2016-01-26 Dynaloy, Llc Dynamic multipurpose composition for the removal of photoresists and method for its use
US9069259B2 (en) 2005-10-28 2015-06-30 Dynaloy, Llc Dynamic multi-purpose compositions for the removal of photoresists and method for its use
US20070243773A1 (en) * 2005-10-28 2007-10-18 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and method for its use
US20100089426A1 (en) * 2005-10-28 2010-04-15 Phenis Michael T Dynamic multipurpose composition for the removal of photoresists and method for its use
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US20110000874A1 (en) 2011-01-06
TWI304525B (ja) 2008-12-21
AU2003235130A1 (en) 2003-11-10
TW200307186A (en) 2003-12-01
KR20050006191A (ko) 2005-01-15
EP1550912A4 (en) 2006-09-06
CN1650235A (zh) 2005-08-03
US8354215B2 (en) 2013-01-15
US20070298619A1 (en) 2007-12-27
US20080280452A1 (en) 2008-11-13
US20090291565A1 (en) 2009-11-26
WO2003091806A1 (fr) 2003-11-06
KR100781925B1 (ko) 2007-12-04
JP2004029696A (ja) 2004-01-29
JP3516446B2 (ja) 2004-04-05

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