US20050103275A1 - Plasma processing apparatus, ring member and plasma processing method - Google Patents

Plasma processing apparatus, ring member and plasma processing method Download PDF

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Publication number
US20050103275A1
US20050103275A1 US10/773,245 US77324504A US2005103275A1 US 20050103275 A1 US20050103275 A1 US 20050103275A1 US 77324504 A US77324504 A US 77324504A US 2005103275 A1 US2005103275 A1 US 2005103275A1
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Prior art keywords
ring member
film
ceramic
base material
group
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US10/773,245
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English (en)
Inventor
Yasuharu Sasaki
Tsuyoshi Moriya
Hiroshi Nagaike
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from JP2003398334A external-priority patent/JP4503270B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MORIYA, TSUYOSHI, NAGAIKE, HIROSHI, SASAKI, YASUHARU
Publication of US20050103275A1 publication Critical patent/US20050103275A1/en
Priority to US12/340,256 priority Critical patent/US8043971B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to a plasma processing apparatus for performing a process such as an etching process on a substrate, e.g., a semiconductor wafer, by using plasma.
  • etching has been performed on a substrate such as a semiconductor wafer (hereinafter, referred to as a wafer) for, e.g., separating capacitors or elements, or forming contact holes.
  • a substrate such as a semiconductor wafer (hereinafter, referred to as a wafer) for, e.g., separating capacitors or elements, or forming contact holes.
  • a single sheet parallel plate type plasma processing apparatus is known as an apparatus performing such a process (see, e.g., reference patents 1 and 2).
  • the above-mentioned apparatus will be described briefly with reference to FIG. 28 .
  • the plasma apparatus includes an upper electrode 11 serving also as a gas shower head and a lower electrode 12 serving also as a mounting table at an upper side and lower side of an airtight vessel 1 , respectively. Further, a silicon ring 13 at an inner side and a quartz ring 14 at an outer side are installed to surround the wafer W on the mounting table 12 .
  • the wafer on the mounting table (the lower electrode) is etched by applying a bias voltage to the lower electrode 12 from a high frequency power supply 16 and performing vacuum exhaust through a gas exhaust port 17 to keep a predetermined pressure, while, at the same time, a high frequency voltage is applied between the upper and lower electrodes 11 and 12 by a high frequency power supply 15 ; and a processing gas from the gas shower head (the upper electrode) 11 is converted into plasma.
  • the processing gas arriving at the proximity of the surface of the wafer W is diffused toward the periphery of the wafer W and exhausted from outside the periphery toward the bottom. Therefore, a gas flow of the processing gas at the peripheral portion (around the periphery) of the wafer W is different from that at the central portion of the wafer W, disturbing a balance of a predetermined composition in the processing gas at the peripheral portion of the wafer W. Further, the component of impedance, conductance or the like between the plasma and the lower electrode at an area on which the wafer W is disposed differs from those at outside the area, respectively. As a result, the plasma state above a nearby area of the wafer•s periphery is different from that above inside of the wafer•s periphery.
  • a ring member (referred to as a focus ring or the like) formed of a conductor, semiconductor or dielectric substance is disposed outside the wafer W to adjust the plasma density above the peripheral portion of the wafer W.
  • a focus ring material is selected; and width, height or the like of the ring is adjusted according to the material of a to-be-etched film, the magnitude of a supply power or the like when installing a focus ring suitable for the process (see, e.g., reference patent 3).
  • a silicon ring is used when etching a silicon oxide film, and, for example, an insulator, such as quartz or the like, is used when etching polysilicon.
  • reference patent 1 Japanese Patent Laid-Open Publication No. 8-335568 (pages 3-4, FIG. 2)
  • reference patent 2 Japanese Patent Laid-Open Publication No. 2000-36490 (page 5, FIG. 3)
  • reference patent 3 Japanese Patent Laid-Open Publication No. 8-162444 (page 5, FIG. 2)
  • the present invention is made under such circumstances. It is, therefore, an object of the present invention to provide an apparatus and method for plasma processing to promote the sharing of an apparatus in executing a plurality of different processes. Another object is to provide a plasma processing apparatus capable of easily adjusting a plasma state between apparatuses executing same processes.
  • a plasma processing apparatus for performing a processing on a to-be-treated substrate mounted on a mounting table in a processing vessel by plasma of a processing gas, including: a ring member formed of an insulating material and installed to surround the to-be-treated substrate on the mounting table; one or more electrodes installed in the ring member; and a DC power supply for applying a DC voltage to the one or more electrodes to adjust a plasma sheath region above the ring member.
  • a specified DC voltage is applied to an electrode in the ring member formed of an insulator, thickness of the ion sheath region at a boundary between the surface of the ring member and plasma state can be adjusted in each processing treatment.
  • a common ring member can be used for a plurality of different processings, thus promoting the sharing of an apparatus.
  • the plasma processing apparatus of the present invention may be provided with a means for varying the applied voltage such that a first DC voltage is applied to the one or more electrodes when a first process is performed on the to-be-treated substrate and a second DC voltage is applied to the one or more electrodes when a second process is performed on the to-be-treated substrate.
  • the means may be provided with a storage area storing process conditions for executing, e.g., the first process and a second process on the to-be-treated substrate, and the applied voltage may be converted with reference to data in the storage area.
  • the first process for example, is etching of a thin film
  • the second process for example, is etching of another thin film which is different from the thin film in the first process.
  • the one or more electrodes in the ring member are installed along a diametrical direction and respective DC voltages applied to the one or more electrodes are adjusted independently.
  • a ring member in a plasma processing apparatus for performing a processing on a to-be-treated substrate mounted on a mounting table in a processing vessel by a plasma of a processing gas
  • the ring member is formed of an insulating material and installed to surround the to-be-treated substrate on the mounting table, wherein the ring member includes: one or more electrodes, installed in the ring member, to each of which a DC voltage is applied to adjust a plasma sheath region above the ring member.
  • a first DC voltage is applied to the one or more electrodes when a first process is performed on the to-be-treated substrate and a second DC voltage is applied to the one or more electrodes when a second process is performed on the to-be-treated substrate.
  • the first process is etching of a thin film
  • the second process is etching of another thin film from which is different from the thin film in the first process.
  • the one or more electrodes in the ring member are installed along a diametrical direction and respective DC voltages applied to the one or more electrodes are adjusted independently.
  • a plasma processing method of the present invention includes the steps of: mounting a to-be-treated substrate on a mounting table in a processing vessel; executing a first process on the to-be-treated substrate by generating plasma in a processing vessel under a condition in which a first DC voltage is applied to an electrode for adjusting a plasma sheath region, which is installed in a ring member formed of an insulating material and installed to surround the to-be-treated substrate on the mounting table; and executing a second process on the to-be-treated substrate by generating plasma in the processing vessel under a condition in which a second DC voltage is applied to the electrode for adjusting the plasma sheath region.
  • a ring member including: a base material; and a film formed by thermal spraying of ceramic on a surface of the base material, wherein the film is formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of the film is sealed by a resin.
  • a ring member including: a base material; and a film formed by thermal spraying of ceramic on a surface of the base material, wherein the film has a first ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd and a second ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of at least one of the first and the second ceramic layer is sealed by a resin.
  • the resin is selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.
  • the ring member including a ring member including: a base material; and a film formed by thermal spraying of ceramic on a surface of the base material, wherein the film is formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of the film is sealed by a sol-gel method.
  • a ring member including: a base material; and a film formed by thermal spraying of ceramic on a surface of the base material, wherein the film has a first ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and a second ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of at least one of the first and the second ceramic layer is sealed by a sol-gel method.
  • a sealing treatment is executed by using an element selected from elements in the Group 3a of the periodic table.
  • the ceramic is at least one kind selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • a ring member including: a base material; and a film formed on a surface of the base material, wherein the film has a main layer formed by thermal spraying of ceramic and a barrier coat layer formed of ceramic including an element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd.
  • the barrier coat layer is formed of at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • the barrier coat layer is a thermally sprayed film at least a portion of which is sealed by a resin, and that the resin is selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.
  • the barrier coat layer is a thermally sprayed film at least a portion of which is sealed by a sol-gel method, and that a sealing treatment is performed by using an element selected from elements in the Group 3 a of the periodic table.
  • the ring member including: a base material; and a film formed on a surface of the base material, wherein the film has a main layer formed by thermal spraying of ceramic and a barrier coat layer formed of engineering plastic between the base material and the main layer.
  • the engineering plastic is a plastic selected from the group consisting of PTFE, PI, PAI, PEI, PBI, PFA, PPS, and POM.
  • the main layer is formed of at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • a ring member including: a base material; and a film formed on a surface of the base material, wherein the film is formed of ceramic having at least one kind of element in the Group 3A of the periodic table and at least a portion of the film is hydrated by vapor or high temperature hot water.
  • the ring member including: a base material; and a film formed on a surface of the base material, wherein the film has a first ceramic layer formed of ceramic including at least one kind of element in the Group 3a of the periodic table and a second ceramic layer formed of ceramic including at least one kind of element in the Group 3a of the periodic table, and at least a portion of at least one of the first and the second ceramic layers is hydrated by vapor or high temperature hot water.
  • the film is a thermally sprayed film formed by thermal spraying or a thin film formed by a thin film formation technique. Further, it is preferable that the film is formed of ceramic selected from Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 .
  • the ring member including: a base material; and a film formed on a surface of the base material, wherein the film has a first ceramic layer formed of ceramic including at least one kind of element in the Group 3a of the periodic table and a second ceramic layer formed by thermal spraying of ceramic, and at least a portion of the first ceramic layer is hydrated by vapor or high temperature hot water.
  • the first ceramic layer is a thermally sprayed film formed by thermal spraying or a thin film formed by a thin film formation technique. Further, it is preferable that the first ceramic layer is formed of ceramic selected from the group consisting of Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 .
  • the second ceramic layer is formed of at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • the ring member including: a base material; and a film formed on a surface of the base material, wherein the film has a hydroxide layer formed of hydroxide including at least one kind of element in the Group 3a of the periodic table.
  • the hydroxide layer is a thermally sprayed film formed by thermal spraying or a thin film formed by a thin film formation technique. Further, it is preferable that the hydroxide layer is formed of hydroxide selected from Y(OH) 3 , Ce(OH) 3 and Nd(OH) 3 . Furthermore, at least a portion of the hydroxide layer is sealed.
  • an anodic oxidized film is formed between the base material and the film, and in this case, it is preferable that the anodic oxidized film is sealed by an aqueous solution of metal salt. Further, the anodic oxidized film may be sealed by a resin selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.
  • a ring member formed of a sintered ceramic body including at least one kind of element in the Group 3a of the periodic table, and at least a portion of the sintered ceramic body is hydrated by vapor or high temperature hot water.
  • the sintered ceramic body is formed by hydrating ceramic selected from the group consisting of Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 .
  • the ring member formed of a sintered ceramic body including a hydroxide having at least one kind of element in the Group 3a of the periodic table.
  • the hydroxide included in the sintered ceramic body is selected from the group consisting of Y(OH) 3 , Ce(OH) 3 and Nd(OH) 3 .
  • the sharing of an apparatus can be promoted in a plurality of different processes by applying a specified DC voltage to an electrode in a ring member formed of an insulator. Further, for example, when the same process is executed by using a plurality of the processing vessels, the adjustment of matching plasma states between these apparatuses can be performed easily by setting the DC voltage applied to each electrode as a variable.
  • peeling off of the film formed by thermal spraying can be suppressed as the surface of the base material is not exposed to the processing gas or the cleaning fluid given that several layers function as a barrier.
  • the ring member almost without a release of water in plasma process is provided, because it can have the structure almost without adsorption and release of water by performing the hydration treatment on the ceramic, including at least one element of the Group 3a of the periodic table, or forming the layer or sintered body having the hydroxide including at least one element of the Group 3a of the periodic table.
  • Reference numeral 2 refers to an airtight processing vessel formed of a conductive material, e.g., aluminum, and the processing vessel 2 is grounded.
  • an upper electrode 3 serving also as a gas shower head, i.e., a gas supply unit for introducing a predetermined processing gas such as an etching gas, is disposed to face a lower electrode 4 serving also as a mounting table for mounting a to-be-processed substrate, e.g., a wafer W, thereon.
  • a gas shower head i.e., a gas supply unit for introducing a predetermined processing gas such as an etching gas
  • a gas exhaust port 21 is installed at the bottom portion of the processing vessel 2 , and a vacuum exhaust unit, i.e., a vacuum pump 22 such as a turbo molecular pump or a dry pump, is connected to the gas exhaust port 21 via a gas exhaust line 21 a .
  • a vacuum exhaust unit i.e., a vacuum pump 22 such as a turbo molecular pump or a dry pump
  • an opening 24 for loading/unloading the wafer W is formed at the sidewall portion of the processing vessel 2 and it can be opened or closed by a gate valve 23 .
  • a number of gas diffusion holes 31 are formed to face the wafer W mounted on the lower electrode 4 and configured to supply uniformly a processing gas therethrough from an upper gas supply line 32 on the surface of the wafer W.
  • the gas supply line 32 is connected at its end to a first gas supplying system 33 for supplying a first processing gas and a second gas supplying system 34 for supplying a second processing gas different from the first gas, and either the first gas supplying system 33 or the second gas supplying system 34 may be selected to supply the processing gas, for example, by opening/closing operation of valves (not shown).
  • the first and second gas supplying systems 33 and 34 set forth herein are intended to supply the first processing gas for executing a first process and the second processing gas for executing a second process, respectively, and the first processing gas (the second processing gas) may represent one or more kind of gases. Furthermore, the only one gas supply line 32 is shown for simplicity, but a number of gas supply lines may be installed in practice, if necessary.
  • the upper electrode 3 is connected to a high frequency power supply 36 for supplying a power with a frequency of, e.g., 60 MHz via a low-pass filter 35 .
  • a high frequency power supply 36 for supplying a power with a frequency of, e.g., 60 MHz via a low-pass filter 35 .
  • an annular quartz shield ring 37 is inserted surrounding the upper electrode 3 along the outer peripheral portion of the upper electrode 3 .
  • the lower electrode 4 is connected via a high-pass filter 40 to a high frequency power supply 41 for applying a bias voltage with a frequency of, e.g., 2 MHz. Further, the lower electrode 4 is disposed on an elevating mechanism 42 installed at the bottom portion of the processing vessel 2 so that the lower electrode 4 can be elevated and lowered by the elevating mechanism 42 . Furthermore, a reference numeral 43 refers to a bellows for preventing plasma from getting under the lower electrode 4 . Further, an electrostatic chuck 44 for attracting and holding the rear surface of a wafer W by means of electrostatic force is installed on the upper surface of the lower electrode 4 .
  • the electrostatic chuck 44 includes a sheet-shaped chuck electrode 45 ; an insulating layer 46 which covers a surface of the chuck electrode 45 and is formed of, e.g., polyamide; and a DC power supply 47 for applying a chuck voltage to the chuck electrode 45 . Further, an annular base plate (not shown) formed of an insulation member such as quartz is installed around the lower electrode 4 to protect the electrode against plasma.
  • a temperature control unit for controlling the wafer W to have a predetermined temperature is installed in the lower electrode 4 .
  • the temperature control unit is intended to regulate the temperature of the wafer W through a rear surface side by means of a coolant passageway 48 , a coolant, a gas supply unit, a heat transfer gas and the like.
  • the coolant passageway 48 are installed in the lower electrode 4 , and the coolant circulates in the coolant passageway 48 and an external coolant temperature control unit (not shown).
  • gas supply holes for purging the heat transfer gas (referred to as a backside gas and the like) such as a helium gas through a very small gap (a space formed by irregularities due to the limit of processing precision on the surface) between the surface of the electrostatic chuck 44 and the rear surface of the wafer W, and the gas supply holes are connected to, e.g., a gas supply unit (not shown).
  • a focus ring 5 i.e., a ring member made of an insulating material selected from alumina, quartz, yttrium oxide and the like, is installed to surround the periphery of the wafer W attracted and held by the electrostatic chuck 44 .
  • the width of focus ring 5 is set to, e.g., 50 mm. It is preferable that the focus ring 5 is installed as close to the outer periphery of the wafer W as possible.
  • the focus ring 5 is installed such that it is, e.g., not more than 2 mm, preferably 1 mm, spaced from the outer periphery of the wafer W.
  • an electrode 51 having a shape of, e.g., ring, and being made of e.g., a metal foil such as Mo, Al or the like or a tungsten film, is embedded in the focus ring 5 along its circumference. Furthermore, the electrode 51 is connected to a DC power supply 52 with an actuator 52 a for converting applied voltages in such a way as to apply a predetermined voltage to the electrode 51 in each process, for example, apply a first DC voltage in a first process and a second DC voltage to the electrode 51 in a second process.
  • the focus ring 5 diffuses plasma which is apt to be condensed, e.g., at and around the periphery of the wafer W, so that it improves uniformity of plasma headed for the wafer W.
  • the electrode 51 is first formed by forming a metal foil by means of screen printing, film-formation or the like, or by laying a meshed metal member on a surface of, e.g., a ring-shaped quartz and then the focus ring 5 is obtained by adhering or welding a thin plate of quartz on the electrode 51 thereto, or performing thermal straying of yttrium oxide or the like on the electrode 51 .
  • a different metal powder which is put on the surface of, e.g., ring-shaped alumina is, for example, pressed to be hardened, forming the electrode 51 and an alumina powder is put thereon and sintered to form the focus ring 5 .
  • a reference numeral 6 of FIG. 1 refers to a controller.
  • the controller 6 has a function to control the operations of the aforementioned high frequency power supply 36 , a high frequency power supply 41 , the actuator 52 a , the first gas supplying system 33 , and the second gas supplying system 34 .
  • a control function of the controller 6 will be described again with reference to FIG. 2 .
  • the controller 6 is provided with a computer 60 , and a plurality of process recipes are stored in a storage area 61 of the computer 60 .
  • a reference numeral 62 refers to a recipe selecting unit 62 which allows, e.g., an operator to select a process recipe corresponding to the kind of to-be-treated film.
  • the first and the second processes are determined depending on a combination and kinds of the films, and the process recipes corresponding to the first and the second processes are selected by the recipe selecting unit 62 .
  • the process recipes may be prepared corresponding to a third process, a fourth process, or the like as required, and in this case, process conditions such as the voltage applied to the electrode 51 are determined for each process.
  • the actuator 52 a is controlled to apply a predetermined DC voltage to the electrode 51 , and the first and the second gas supplying system 33 and 34 are controlled during supplying operations to introduce a predetermined processing gas into the processing vessel 2 with a predetermined flow rate.
  • reference numerals 63 and B refer to a CPU and a bus, respectively.
  • FIGS. 3A to 3 D A process of adjusting states of plasma by applying a DC voltage to the electrode 51 of the focus ring 5 will be described with reference to FIGS. 3A to 3 D.
  • a DC voltage is not applied to the electrode 51 and a processing gas in the processing vessel 2 is converted into a plasma as shown FIG. 3A
  • an ion sheath region (a plasma sheath region) including high-density positive ion species 200 is formed at a boundary between the surface of the wafer W and the plasma P due to higher velocities of electrons compared with those of positive ion species.
  • an ion sheath region is also formed at a boundary between the surface of the focus ring 5 and the plasma P in the same manner, and is thicker than the ion sheath region on the surface of the wafer W because the focus ring 5 is made of an insulating material.
  • the ion sheath region on the surface of the focus ring 5 are formed with various shapes according to the shapes, material and the like of the focus ring 5 . As described above, when the ion sheath regions are different in thickness, there is a difference of the plasma density in the surface of the wafer W, particularly, between the peripheral portion thereof and the central portion thereof.
  • a repulsive force whose magnitude is suitable for the applied voltage acts between the positive ion species 200 and the electrode 51 , so that the positive ion species 200 in the ion sheath region are returned into the plasma P, changing the ion sheath region in shape, especially, in thickness. As a result, the plasma density is changed.
  • the state of the plasma P eventually becomes adjusted if a predetermined DC voltage is applied to the electrode 51 .
  • how to set the practically applied DC voltage for an in-surface uniform treatment of the wafer W depends on a kind of film to be etched, supply powers applied to the electrodes 3 and 4 , and the like. Therefore, it is preferable to determine set values for each process in advance by way of experiments. Further, a negative voltage may be applied to the electrode 51 .
  • a method for processing the wafer W as a to-be-treated substrate by using the above-mentioned plasma processing apparatus is described.
  • FIG. 4A an example of etching a wafer W with a silicon nitride film 65 deposited on a base film of a silicon film 64 is described as shown in FIG. 4A , wherein the silicon nitride film has different processing conditions from those of the silicon film.
  • a first process is a process of etching an upper silicon nitride film 65 as shown in FIG. 4B
  • a second process following the first process is a process of etching a lower silicon film 64 as shown in FIG. 4C .
  • process recipes corresponding to these processes are selected by the recipe selecting unit 62 and the process conditions are set based on information of the selected process recipe.
  • the wafer W is loaded into the processing vessel 2 from a load-lock chamber (not shown) after the gate valve 23 is opened. Thereafter the wafer W is mounted on the electrostatic chuck 44 of the lower electrode 4 via substrate elevating pins (not shown). Then, the gate valve 23 is closed to make the processing vessel 2 airtight. Subsequently, the elevating mechanism 42 is raised, so that the surface of the wafer W is set at a predetermined height with respect to the upper electrode 3 . On the other hand, the surface of the lower electrode 4 is set at a predetermined temperature since a coolant circulates in the coolant passageway 50 .
  • the wafer W is controlled to be kept at a predetermined temperature by balancing of heat of the gas and heat transferred from plasma to the wafer W upon generation of plasma as described below.
  • the processing vessel 2 is exhausted to a vacuum state by the vacuum pump 22 while the first etching gas such as CHF 3 or the like with a given flow rate is introduced thereto from the first gas supplying system 33 through the gas supply line 32 and sprayed uniformly on the surface of the wafer W through the gas diffusion holes 31 . So, the processing vessel 2 is maintained at a vacuum level of, e.g., from 30 to 100 mTorr (approximately, 4 to 13.3 Pa).
  • the first etching gas forms an air flow flowing on the surface of the wafer W outward along a diametrical direction, and is exhausted uniformly from the periphery of the lower electrode 4 .
  • the first DC voltage e.g., 1000V
  • a voltage with a high frequency of, e.g., 60 MHz is applied from the high frequency power supply 34 to the upper electrode 3 , e.g., at 1800 Wand a bias voltage of, e.g., 2 MHz is applied from the high frequency power supply 41 to the lower electrode 4 , e.g., at a range from 1800 to 2250 W with a timing of 1 second or less. Consequently, the first etching gas is converted into a plasma while, at the same time, the ion sheath regions are formed at a boundary between the plasma and the surfaces of the wafer W and the focus ring 5 .
  • the ion sheath region above the focus ring 5 has a different thickness according to the magnitude of a DC voltage applied to the electrode 51 , whereby the plasma above the peripheral portion of the wafer W has a desired shape. Then, active species of the plasma move to the ion sheath region and are projected with a high perpendicularity toward the surface of the wafer W under a high frequency bias to etch the silicon nitride film 65 .
  • process conditions are set by reading the process recipe for the second process to start the second process.
  • the processing vessel 2 is opened to exhaust the first etching gas.
  • the applied voltage is converted by the actuator 52 a such that a voltage of, e.g., 100V is applied to the electrode 51 .
  • the high frequency voltages applied to the upper and lower electrodes 3 and 4 by the high frequency power supplies 36 and 41 are adjusted according to the process recipes.
  • the second etching gas e.g., Cl
  • the second etching gas is converted to a plasma.
  • the second DC voltage applied to the electrode 51 controls the thickness of the ion sheath region above the focus ring 5 and a proper plasma suitable for etching the silicon film 64 is formed to etch the silicon film 64 .
  • the focus ring 5 since a shape of the ion sheath region at the boundary between the surface of the focus ring 5 and the plasma can be adjusted in each processing, e.g., according to kinds of films with different process conditions by applying the predetermined DC voltage to the electrode 51 of the focus ring 5 , the shape of a plasma suitable for processing the surface of the wafer W uniformly can be formed. Accordingly, the focus ring 5 may be also used in a plurality of different processes, thus promoting sharing of the present apparatus. The sharing of the present apparatus is advantageous since it contributes to reduction of the footprint of an apparatus and costs incurred in manufacturing and operating apparatuses.
  • the adjustment of matching plasma shapes of these apparatuses can be readily performed.
  • a plurality of the aforementioned plasma processing apparatuses described above are installed in a clean room and the same process is executed in these apparatuses, subtle differences may exist in process results of the wafers W because assembly of the apparatuses or the like are different slightly.
  • the characteristics of the apparatuses i.e., the results of the process, can be match to each other.
  • it can be easily achieved to match the apparatuses.
  • the present invention is not limited to promoting the sharing of an apparatus and may be an apparatus for exclusive use in a certain type of process, e.g., etching of a specific film.
  • the plasma processing apparatus of the present invention is not limited to a structure in which two kinds of processes, such as the first and second processes are performed. And, for example, when there are five deposition films on the surface of the wafer W, three, four, or five different processes may be shared according to the kinds of films with different process conditions. Further, six and more different processes may be performed. Even with this structure, a same effect as described above can be obtained.
  • the focus ring 5 formed of an insulator is not necessarily disposed close to the periphery of the wafer W, and a conductor, for example, a silicon ring 8 may be installed through a circumference direction between the outer periphery of the wafer W and an inner periphery of the focus ring 5 , as shown in FIG. 5 . Even with this structure, a same effect as described above can be obtained.
  • the number of the electrode 51 embedded in the focus ring 5 is not limited to one. And for example, two ring-shaped electrodes 51 a and 51 b are disposed in the focus ring 5 on a line along a diametrical direction and connected to DC power supplies 52 A and 52 B, respectively, each of which is provided with an actuator to control a DC voltage independently. Even with this structure, a same effect as described above can be obtained. Further, a DC voltage applied to the outer electrode 52 b is lower than that applied to the inner electrode 51 a . Since DC voltages can be set minutely within the surface of the focus ring 5 , for example, it is possible to adjust the thickness of the ion sheath region with a higher precision.
  • the processing vessel 2 is not symmetrical in a plan view due to, for example, a conveying opening formed on a portion thereof and the like. This may result in a radially nonuniform plasma or a poor in-surface uniformity along a specific diametrical direction from the center. In such a case, it is possible that a specific part of the electrode 51 in the focus ring 5 is separated from the other part of the electrode 51 along a circumference direction and voltages applied to both parts may be different from each other for guaranteeing the radial uniformity of the plasma.
  • the present invention it is not limited to the actuator 52 a to convert the applied voltage, and for example, DC power supplies 52 for the first process and the second process are installed and a switch may be used to convert the applied voltage. Even with this structure, a same effect as described above can be obtained. Additionally, etching is employed as an example of the plasma process in the previous example, but the present invention can be applied to various plasma processes, for example, CVD and ashing.
  • a reference numeral 90 in the drawing refers to a first transferring and mounting chamber 90 connected to cassette chambers 92 A and 92 B via gate valves G 1 and G 2 at both sides thereof.
  • the cassettes 91 capable of receiving a number of wafers W can be charged into the cassette chambers 92 A and 92 B.
  • preliminary vacuum chambers 93 A and 93 B are connected to the rear of the first transferring and mounting chamber 90 via gate valves G 3 and G 4 , respectively.
  • a first transferring and mounting unit 94 including, e.g., a multi-joint arm is disposed in the first transferring and mounting chamber 90 .
  • a second transferring and mounting chamber 95 is connected to the rear of the preliminary vacuum chambers 93 A and 93 B via gate valves G 5 and G 6 , and processing vessels 2 A, 2 B and 2 C ( 2 ) of the above-mentioned plasma processing apparatus are respectively connected to the right, the left and the rear side of the second transferring and mounting chamber 92 via gate valves G 7 to G 9 (corresponding to the gate valve 23 ). Still further, a second transferring and mounting unit 96 including, e.g., a multi-joint arm is disposed in the second transferring and mounting chamber 95 .
  • the wafer W in the cassette 91 is conveyed from the first transferring and mounting chamber 90 to the preliminary vacuum chamber 93 A, and from the preliminary vacuum chamber 93 A to the second transferring and mounting chamber 95 .
  • three kinds of films can be etched in the processing vessels 2 A to 2 C, respectively.
  • the wafer W with the three kinds of films to be etched is loaded into an empty one 2 A ( 2 B, 2 C) among the processing vessels 2 A to 2 C, and the three kinds of films are etched in the processing vessel 2 A ( 2 B, 2 C).
  • the wafer W is unloaded from the processing vessel 2 A ( 2 B, 2 C) and returned into the cassette 91 in an order opposite to the aforementioned loading process.
  • FIG. 8 is a vertical cross-sectional view of an example of a plasma etching processing apparatus, which is a plasma processing apparatus with a ring member of a plasma processing vessel, a subject of the present invention.
  • a reference numeral 20 refers to a vacuum chamber included in the processing vessel, which is formed of a conductive material, such as aluminum, to have an airtight structure. And the vacuum chamber 20 is frame-grounded. Additionally, a cylindrical deposition shield 20 a is disposed to an inner surface of the vacuum chamber 20 to prevent the inner surface from being damaged by plasma. Further, disposed in the vacuum chamber 20 are a gas shower head 30 serving also as an upper electrode and a mounting table 210 serving also as a lower electrode, which are installed to face each other.
  • a gas exhaust pipe 26 which serves as a vacuum exhaust passageway communicating with a vacuum exhaust unit 25 having, e.g., a turbo molecular pump or a dry pump.
  • a vacuum exhaust unit 25 having, e.g., a turbo molecular pump or a dry pump.
  • Permanent magnets 28 and 29 having, for example, a shape of ring, are mounted on an outside of a sidewall portion in such a manner that the opening 27 is located therebetween.
  • the gas shower head 30 has a plural number of holes 38 facing the object W to be processed on the mounting table 210 , and is configured to supply a flow-controlled or pressure-controlled processing gas coming from an upper gas supply line 39 to a surface of the object W to be processed uniformly through the corresponding holes 38 .
  • the mounting table 210 includes a cylindrical main body 211 which is formed of, for example, aluminum having its surface subjected to alumite treatment and is insulated by an insulating member 211 a from the vacuum chamber 20 ; an electrostatic chuck 212 mounted on an upper surface of the main body 211 ; a circular focus ring 213 surrounding the electrostatic chuck 212 ; and an insulation ring 213 a as a circular insulation member inserted between the focus ring 213 and the main body 211 .
  • the electrostatic chuck 212 includes a sheet-shaped chuck electrode 216 and an insulating layer 215 formed of, e.g., polyimide covering the surface of the chuck electrode 216 . Further, depending on a process, an insulating or conductive material is selected for the focus ring 213 to confine or diffuse reactive ions as aforementioned. An electrode (not shown) having a shape of, e.g., ring is embedded in the focus ring 213 , as in the embodiment of FIG. 1 . In addition, there are installed the DC power supply 52 , the actuator 52 a , and the controller 6 as shown in FIG. 1 , and first and the second DC voltage are applied to the electrode in the focus ring 213 . Moreover, in the same way as described above, an electrode may be embedded in the insulation ring 213 a and a voltage to be applied to the electrode may be converted by connecting the electrode to the above or another DC power supply.
  • an electrode may be embedded in the insulation ring 213 a and a voltage to be
  • the body 211 thereof is connected to a high frequency power supply 200 via a capacitor C 1 and a coil L 1 , and a high frequency power in a range of, e.g., from 13.56 MHz to 100 MHz is applied thereto.
  • a temperature control unit 314 a of a cooling jacket and a heat transfer gas supply unit 314 b to supply, e.g., He gas to a rear surface of the object W to be processed.
  • a process surface of the object W to be processed, held on the mounting table 210 can be maintained at a desired temperature by activating the temperature control unit 314 a and the heat transfer gas supply unit 314 b .
  • the temperature control unit 314 a has an inlet line 315 and a discharge line 316 for circulating a coolant via the cooling jacket.
  • the coolant regulated to be kept at an adequate temperature is provided into the cooling jacket by the inlet line 315 , and the coolant after heat exchange is exhausted to outside by the discharge line 316 .
  • a ring-shaped exhaust plate 214 having a plurality of exhaust holes punched therein is disposed between the mounting table 210 and the vacuum chamber 20 and installed at a position lower than a surface of the mounting table 210 in such a manner that it surrounds the mounting table 210 .
  • the exhaust plate 214 serves to optimally confine the plasma between the mounting table 210 and the gas shower head 30 and to regulate flows of exhaust current are regulated.
  • protrudently installed in the mounting table 210 are a plural number, for example, three, of elevating pins 310 (only two pins are shown) as elevating members for executing transfer of the object W to be processed between an external transfer arm (not shown) and the mounting table 210 such that the elevating pins 310 can be elevated and lowered by a driving unit 312 through a coupling member 311 .
  • a reference numeral 313 refers to a bellows for keeping the space between through holes of the elevating pins 310 and the atmosphere airtight.
  • the object W to be processed is first mounted on the electrostatic chuck 212 , the gate valve G is closed, and an inside of the vacuum chamber 20 is exhausted through the gas exhaust pipe 26 by the vacuum exhaust unit 25 to a predetermined degree of vacuum. Thereafter, when the processing gas is supplied to the inside of the vacuum chamber 20 , a DC voltage is simultaneously applied from a DC power supply 217 to a chuck electrode 216 , so that the object W to be processed is electrostatically attracted to be held by the electrostatic chuck 212 .
  • the high frequency power with a predetermined frequency is applied from the high frequency power supply 200 to the main body 211 of the mounting table 210 to thereby generate a high frequency electric field between the gas shower head 30 and the mounting table 210 , which in turn transforms the processing gas into plasma used for performing an etching process on the object W to be processed on the electrostatic chuck 212 .
  • a gas including a halogen element for example, a fluoride such as C 4 F 8 and NF 3 , a chloride such as BCl 3 and SnCl 4 , and a bromide such as HBr, is used. Since a highly strong corrosive environment is generated inside the vacuum chamber 20 owing to this, a strong plasma resistance is imperatively required for the members within the vacuum chamber 20 , that is, the internal members of the plasma processing vessel, for example, the deposition shield 20 a , the exhaust plate 214 , the focus ring 213 , the shower head 30 , the mounting table 210 , the electrostatic chuck 212 , and the inner wall member of the vacuum chamber 20 .
  • a halogen element for example, a fluoride such as C 4 F 8 and NF 3 , a chloride such as BCl 3 and SnCl 4 , and a bromide such as HBr.
  • the ring member to which the structure of the present invention is applied corresponds to the focus ring 213 and insulation ring 213 a .
  • the insulation ring 213 a lies under the focus ring 213 , but it is preferable that a following process is executed also on the insulation ring 213 a because an inner periphery thereof comes into contact with the processing gas or cleaning fluid. Further, in the present invention, the following process may be executed on only the focus ring 213 .
  • a thermally sprayed film is bound to be peeled off.
  • the present inventors have found in their investigation that the peeling off of the thermally sprayed film on the ring member of the plasma processing vessel is resulted from the fact that the processing gas and/or the cleaning fluid infiltrate through air pores (fine holes) of the thermally sprayed film, a boundary portion between the thermally sprayed film and the base material or a portion damaged by plasma and gas to thereby reach the base material, which ultimately corrodes a surface of the base material.
  • a ring member of a processing vessel where a plasma treatment has been performed by using a processing gas including a fluoride, is prepared to analyze a boundary surface (a base material surface) between the base material and the thermally sprayed film, F (fluorine) can be found therein. From this, it is suggested that F reacts on water (OH) to form HF, whereby the base material surface is corrosively changed (a corrosion by-product is generated), which leads to the peeling off of the thermally sprayed film.
  • F fluorine
  • the boundary surface between the base material and the thermally sprayed film i.e., the base material surface, is not exposed to the processing gas or the cleaning fluid.
  • a portion having barrier function which is hardly corroded is formed at a position between the surface of the sprayed film and the base material in the ring member of FIG. 8 , even if it is exposed to the processing gas or the cleaning fluid, thus being capable of preventing the processing gas or the cleaning fluid from reaching the surface of the base material.
  • the portion having the barrier function By forming the portion having the barrier function by using a high corrosion-resistant material, the surface of the base material can be protected from the processing gas or the cleaning fluid infiltrating through the air pores (the fine holes) of the thermally sprayed film. Additionally, if the portion having the barrier function is in contact with the base material, employing a material with high adhesivity for the portion makes it possible to protect the surface of the base material from infiltration of the processing gas or the cleaning fluid through a boundary surface between the portion having the barrier function and the surface of the base material.
  • a first example of the ring member basically includes a base material 71 and a film 72 formed on its surface.
  • the film 72 has a main layer 73 formed by thermal spraying and a barrier coat layer 74 formed between the base material 71 and the main layer, which has the barrier function to be rarely corroded even when exposed to the processing gas or the cleaning fluid.
  • the barrier coat layer 74 is formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and, more particularly, at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • products of TOCALO co., LTD. such as ••CDC-ZAC•• and ••super ZAC•• are applicable.
  • ••CDC-ZAC•• is a complex ceramic including Cr 2 O 3 as a main ingredient, and has features such as imporosity, high hardness, high adhesion and the like.
  • ••super ZAC•• is a complex ceramic including SiO 2 and Cr 2 O 3 as main ingredients, and has excellent heat-resistance and abrasion-resistance in addition to imporosity, high hardness and high adhesion. It is preferable to form the barrier coat layer 74 by a thermal spraying method.
  • the thermal spraying method is a method for spraying raw material melted by a heat source such as combustion gas and electricity on a basic material to form a film.
  • the barrier layer 74 may be formed by employing a technique for forming a thin-film such as PVD and CVD method, an immersion method, a coating method, or the like.
  • the PVD method is a method of coating various ceramic films coated at low temperature by employing an ion plating method, while the CVD method is a method for coating single layer or multiple layers at high temperature by a thermal chemical vapor deposition. Furthermore, the method is a method for performing a heat treatment after immersing various materials being immersed into a resin solution, and the coating method is a method for performing the heat treatment at a predetermined temperature after various materials being coated with a resin solution. It is desirable that the barrier coat layer 74 is of a thickness ranging from 50 to 100••.
  • the resin is selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.
  • the barrier coat layer 74 made of ceramic has porosity with air pores (fine holes) when forming by using the aforementioned thermal spraying method, but sealing the fine holes in at least a portion of the porous layer with the resin can prevent the gas or the cleaning fluid from infiltrating through the fine holes of the main layer 73 made of the thermally sprayed film, thus protecting the base material 71 effectively.
  • SI refers to silicon, PTFE to polytetrafluoroethylene, PI to polyimide, PAI to polyamideimide, PEI to polyetherimide, PBI to polybenzimidazole, and PFA to perfluoroalkoxyalkane.
  • the sealing treatment may be executed by employing a sol-gel method.
  • the sealing treatment employing the sol-gel method is performed by sealing with a sol (a colloidal solution) in which ceramic is dispersed in an organic solvent, and then by the gelation by heating. Accordingly, the sealing by using ceramic is substantialized, so that a barrier effect can be improved.
  • a material selected from the elements of the Group 3a in the periodic table is used in the sealing treatment of this case. Among them, highly corrosion-resistant Y 2 O 3 is desirable.
  • engineering plastics may be used as another alternative material for the barrier coat layer 74 .
  • a resin selected from the group consisting of PTFE, PI, PAI, PEI, PBI, PFA, PPS and POM is preferable and, for example, ••Teflon (a registered trademark)•• (PTFE), a product of DUPONT INC., and the like are applicable. These resins have excellent adhesivity and chemical resistance which are sufficient enough to stand against the cleaning fluid in cleaning.
  • PTFE refers to polytetrafluoroethylene, PI to polyimide, PAI to polyamideimide, PEI to polyetherimide, PBI to polybenzimidazole, PFA to perfluoroalkoxyalkane, PPS to polyphenylenesulfide, and POM to polyacetal.
  • an anodic oxidized film 75 may be formed between the base material 71 and the barrier coat layer 74 as depicted in FIG. 10 .
  • the anodic oxidized film is formed by organic acid, such as oxalic acid, chromic acid, phosphoric acid, acetic acid, formic acid or sulfonic acid, which will result in an oxidized film whose corrosion resistance is much better than those produced by an anodic oxidation treatment by sulfuric acid, so that it can further suppress the corrosion by the processing gas and the cleaning fluid.
  • the anodic oxidized film 75 is of a thickness ranging from 10 to 200••.
  • a metal salt sealing is applicable, in which a material is immersed in hot water including metal salt such as Ni, so that, in fine holes of the oxidized film, an aqueous solution of metal salt is hydrolyzed, whereby hydroxide is precipitated, thus performing sealing.
  • the same effect can also be achieved even when the sealing treatment of the fine holes of the anodic oxidized film 75 is executed by using the resin.
  • the resin is selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA as described above.
  • an anodic oxidized film (KEPLA-COAT: a registered trademark) with a porous ceramic layer may be used as the anodic oxidized film 75 formed on the surface of the base material 71 .
  • anodic oxidized film (KEPLA-COAT) is formed by immersing the base material as an anode in an alkali-based organic electrolyte to discharge an oxygen plasma therein.
  • the main layer 73 as the thermally sprayed film includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and, to be more specific, it is preferable to include at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 . In this case, it is desirable that the main layer 73 is of a thickness ranging from 10 to 500 ⁇ m.
  • the barrier coat layer 74 or the anodic oxidized film 75 it is preferable to increase adhesivity of the barrier coat layer 74 or the anodic oxidized film 75 to be formed on the surface of the base material 71 by executing a blast treatment for blowing up particles such as Al 2 O 3 , SiC or sand on the surface of the base material 71 to make the surface thereof microscopically uneven. Additionally, etching the surface, e.g., by immersion in a given medicinal fluid, is allowed as a method for making the surface uneven, not limiting the method to the aforementioned blast treatment.
  • the aforementioned barrier coat layer 74 is formed directly on the base material 71 or through the anodic oxidized film 75 by employing the thermal spraying method or another proper method. If necessary, the sealing treatment as described above is executed.
  • the aforementioned resin or sol of ceramic is coated on the surface of the barrier coat layer 74 , or the base material 71 with the barrier coat layer 74 thereon is immersed in a resin sealing material or the sol of ceramic.
  • gelation by heating is followed by heating.
  • the layer 73 is formed of at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • the blast process and the like may be performed on the surface of the barrier coat layer 74 to further improve adhesivity with the main layer 73 .
  • the problem that the thermally sprayed film 72 on the base material 71 is peeled off by generation of the corrosion by-product on the surface of the base material 71 can be solved by forming the barrier coat layer 74 made of material with excellent corrosion resistance against the processing gas including the halogen element or the cleaning fluid between the main layer 73 as the thermally sprayed film and the base material 71 in such a way that the surface of the base material 71 is not exposed to the processing gas (halogen element) or the cleaning fluid.
  • a film 76 is formed on the surface of the base material 71 by thermal spraying of ceramic and a sealing-treated portion 76 a is formed in at least a portion of the film 76 .
  • the sealing-treated portion 76 a is formed in a side of a portion of the film 76 making a contact with the base material 71 in an example of FIG. 11A , in a surface side of the film 76 in the example of FIG. 11B , and in the whole of the film 76 in the example of FIG. 11C , respectively.
  • the film 76 includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and, to be more specific, at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 .
  • the film 76 is of a thickness ranging from 50 to 300 ⁇ m.
  • the same material as in the first example can be used as the base material 71 .
  • the sealing-treated portion 76 a can be formed by sealing by employing an exactly same resin sealing or sol-gel method as executed on the barrier coat layer 74 in the first example. As described above, by forming the sealing-treated portion 76 a , the gas or the cleaning fluid infiltrating through the fine holes of the film 76 , i.e., the thermally sprayed film, can be effectively blocked, so that the base material 71 can be protected sufficiently. Because the sealing-treated portion 76 a is for preventing the gas or the cleaning fluid from reaching the base material 71 , any one of those shown in FIGS. 11A to 11 C can be effective.
  • sealing-treated portion 76 a on the side of a portion of the film 76 making a contact with the base material 71 as shown in FIG. 11A is more preferable. That is, if the ring member of the processing vessel whose thermally sprayed film has undergone the sealing treatment is used in a plasma atmosphere obtained by applying high frequency power in a high vacuum area (e.g., 13.3 Pa), a diluted organic solvent (e.g., ethyl acetate) in a sealing material may be evaporated, or the sealing material may be corroded by the plasma, the processing gas and the like, so that air pores (fine holes) may be formed in the thermally sprayed film again.
  • a diluted organic solvent e.g., ethyl acetate
  • the sealing-treated portion 76 a may be formed, for example, in the middle of the film 76 , without limiting the positions to those depicted in FIGS. 11A to 11 C. It is desirable that the sealing-treated portion 76 a is from 50 to 100 ⁇ m thick.
  • anodic oxidized film 75 as in the first example can be formed between the base material 71 and the film 76 . Further, in this case, sealing the anodic oxidized film 75 is preferable and the same metal salt sealing as mentioned above is available for this sealing treatment.
  • a film 77 is formed on the surface of the base material 71 by the thermal spraying of ceramic, the film 77 has a two-layer structure including a first ceramic layer 78 and a second ceramic layer 79 , and a sealing portion is formed in at least a portion of at least one of them.
  • a sealing-treated portion 78 a is formed in the first ceramic layer 78 located at a surface side
  • a sealing-treated portion 79 a is in the second ceramic layer 79 located at a base material 71 side.
  • Both the first ceramic layer 78 and the second ceramic layer 79 , being included in the film 77 include at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and, to be more specific, include at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 is preferable. In this case, it is desirable that the film 77 is from 50 to 300 ⁇ m thick. Further, exactly the same material as in the first example can be used as the base material 71 .
  • the sealing-treated portions 78 a and 79 a may be formed by employing exactly the same resin sealing or sol-gel method as executed on the barrier coat layer 74 of the first example. As described above, by installing the sealing-treated portions 78 a and 79 a , the gas or the cleaning fluid infiltrating through the fine holes of the first and second ceramic layers 78 and 79 , i.e., the thermally sprayed films, can be effectively blocked, so that the base material 71 can be protected sufficiently.
  • sealing-treated portions 78 a and 79 a are used for preventing the gas or the cleaning fluid from reaching the base material 71 as described above, positions of the sealing-treated portions 78 a and 79 a are not limited as long as their functions can be realized effectively, and the whole layer may also be used as the sealing-treated portion. Further, the sealing-treated portion may be formed in both sides of the first and second ceramic layers 78 and 79 . It is desirable that the sealing-treated portions 78 a and 79 a are from 50 to 100 ⁇ m thick.
  • the film 77 formed on the base material 71 since, by allowing the film 77 formed on the base material 71 to have the two-layer structure, materials of these two layers can be appropriately selected in accordance with the required corrosion resistance and barrier property, it can be widely applied with a very high degree of freedom by performing the sealing treatment at a desired position.
  • the corrosion-resistance and the barrier property can be much enhanced if Y 2 O 3 is used as the first ceramic layer 78 located toward the surface, YF 3 or Al 2 O 3 is used as the second ceramic layer 79 located toward the base material 71 and the sealing is executed in at least a portion of the second ceramic layer 79 .
  • anodic oxidized film 75 as in the first example may be formed between the base material 71 and the film 77 . Further, in this case, sealing the anodic oxidized film 75 is preferable, wherein the same metal salt sealing and the like as mentioned above and the like are available.
  • a first sample was made by forming a thermally sprayed film of Y 2 O 3 on a base material of Al alloy
  • a second sample was made by forming a thermally sprayed film of Y 2 O 3 through a resin (PTFE) barrier coat layer on a base material of Al alloy
  • a third sample was made by forming a thermally sprayed film of Y 2 O 3 on on a base material of Al alloy and sealing some of the thermally sprayed film with the resin.
  • the surface states of the thermally sprayed films were subject under plasma environment after dropping a HF solution on the surfaces of the first to the third samples to compare with each other.
  • the samples were put under a plasma atmosphere of a CF-based gas for three minutes after dropping a 38% HF solution of 10 ⁇ l on each surface of the samples and being heated at 50° C. for three hours.
  • a crack had developed on the whole surface of the first sample on which a countermeasure for peeling off of the thermally sprayed film had not been executed, while no crack had developed and the surfaces of the base materials were protected by preventing the infiltration of hydrofluoric fluid in the second sample where the barrier coat layer was formed between the base material and the thermally sprayed film and the third sample where some of the thermally sprayed film was sealed by the resin.
  • a hydrated portion is formed of ceramic including the element of the Group 3a in the periodic table, or at least a portion of that is formed of hydroxide including that element.
  • a film 82 made of ceramic including an element of the Group 3a in the periodic table is formed on a base material 81 and a hydration-treated portion 82 a is formed, for example, at least in a surface portion of the film 82 .
  • the film 82 may be made of ceramic including an element of the Group 3a in the periodic table, but it is preferable to be made of oxide including the element of the Group 3a in the Periodic table. Further, among these, Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 are preferable and, among them, Y 2 O 3 is particularly desirable since it has been conventionally and widely used and has high corrosion resistance.
  • the film 82 can be formed preferably by employing a technique for forming a thin-film such as the thermally sprayed method and the PVD and CVD method. Further, it is possible to form the film by employing the immersion method, the coating method or the like.
  • the hydration-treated portion 82 a can be formed, for example, by making the film 82 react on water vapor or high temperature hot water to cause a hydration reaction.
  • the reaction such as an equation (1) below occurs: Y 2 O 3 +H 2 O ⁇ Y 2 O 3 .(H 2 O)n ⁇ 2(YOOH) ⁇ Y(OH) 3 (1) wherein mantissa is not considered in Eq. (1).
  • Y hydroxide is formed in the end.
  • such hydroxide is formed by almost the same reaction.
  • Y(OH) 3 , Ce(OH) 3 and Nd(OH) 3 are preferable for such hydroxide.
  • samples having the thermally sprayed film of Y 2 O 3 on the base material were prepared, and X-ray diffraction measurement was performed on the one sample which was hydrated by immersion in high temperature hot water maintained at a temperature of 80° C. for 150 hours and then dehydrated at room temperature, and on another sample on which these treatments were not performed.
  • the comparison result showed that Y(OH) 3 was detected only in the sample on which the hydration treatment was performed, confirming that hydroxide was formed by the hydration treatment, as shown in FIGS. 16A and 16B .
  • the hydroxide of the element of the Group 3a in the periodic table is highly stable and has features that chemically adsorbed water is difficult to be separated and it is difficult to adsorb water.
  • the problem caused by water during the process can be avoided by forming the hydroxide like this by the hydration treatment.
  • the hydration treatment can be executed by heat treatment in an environment containing abundant water vapor or treatment in boiling water. Several water molecules can be attracted toward neighborhood of, e.g., an yttrium oxide (Y 2 O 3 ) molecule to be combined together into one stable molecule cluster. At this time, main parameters include partial pressure of water vapor, temperature and time of heat treatment and the like.
  • a stable hydroxide can be formed by heat treatment for about 24 hours in a furnace with temperature ranging from about 100 to about 300° C. under relative humidity which is equal to or greater than 90%. If relative humidity and temperature of heat treatment are low, it is preferable to prolong the time of treatment.
  • Treatment at high temperature and high pressure is desirable for efficient hydration treatment. Because the hydration reaction on the surface of yttrium oxide can proceed basically even at room temperature if executed for a long time, the same final state can be obtained also under other conditions besides the above condition. Further, in the hydration treatment, using water including ion (alkali water with a pH higher than 7) results in a hydroxide with a better hydrophobic property than for the case using pure water.
  • hydration treatment other methods, for example, forming hydroxide at a raw material step, may be employed as long as the hydroxide is formed finally.
  • the hydroxide may be changed into an oxide if hydroxide is formed at the raw material step, but, even in this case, a hydroxide film can be formed by thermally spraying under a condition of high humidity.
  • the hydroxide may be formed directly by using a different method.
  • the hydration-treated portion or hydroxide layer should be formed in a surface portion of the film 82 in order that the film 82 has a structure difficult to adsorb water and be separated from water. It is desirable that the hydration-treated portion or hydroxide film of this case is equal to or greater than 100 ⁇ m thick and the thickness thereof is set optimally depending on usage place.
  • Densification is also promoted by the hydration treatment for the ceramic including the element of the Group 3a in the Periodic table.
  • the Y 2 O 3 film formed by the thermal spraying is porous before the hydration treatment as shown FIG. 19A , but it is densified by the hydration treatment as shown in FIG. 19B .
  • the same barrier effect as in the first embodiment is obtained in addition to the above effect.
  • the hydration-treated portion 82 a of the hydroxide formed by the hydration treatment need not be located necessarily in the surface portion of the film 82 , and it may be formed at any position of the film 82 .
  • exactly the same anodic oxidized film 83 may be formed between the base material 81 and the film 82 .
  • it is preferable to perform the sealing treatment on the anodic oxidized film 83 and, as this sealing treatment, the metal salt sealing identical to the aforementioned one is available.
  • a film 84 is formed in the surface of the base material 81 , it has two-layer structure including a first ceramic layer 85 and a second ceramic layer 86 , and a hydration-treated portion is formed in at least a portion of at least one of the first and the second ceramic layer.
  • a hydration-treated portion 85 a is formed in a surface side of the first ceramic layer 85 in the example of FIG. 21A
  • a hydration-treated portion 86 a is formed in a side of the second ceramic layer 86 making a compact with the base material 81 in the example of FIG. 21B .
  • a film 84 is formed on the surface of the base material 81 , and it has double layers including a first ceramic layer 85 and a second ceramic layer 86 , and a hydration treatment portion formed in at least a portion of at least one of the first and second ceramic layers.
  • a hydration treatment portion 85 a is formed at the first ceramic layer 85 on the top (the surface) of the film 84 in the example of FIG. 21A
  • a hydration-treated portion 86 a is formed at the second ceramic layer 86 on the bottom of the film 84 in contact with the base material 81 in the example of FIG. 21B .
  • Both the first ceramic layer 85 and the second ceramic layer 86 included in the film 84 are formed of ceramic including an element of the Group 3a in the periodic table and, an oxide including an element of the Group 3a in the periodic table is preferable. Among them, Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 are preferable, and particularly, Y 2 O 3 is preferable. Furthermore, exactly the same material as in the fourth example can be used as the base material 81 .
  • first and second ceramic layers 85 and 86 can be formed preferably, in a similar way as the film 82 in the first example, by employing the technique for forming a thin-film such as the thermal spraying method, the PVD method or the CVD method. Further, it is possible to form them by employing an immersion method, a coating method, or the like.
  • the hydration-treated portions 85 a and 86 a can be formed in exactly the same way as the hydration-treated portion 82 a in the fourth example. If the hydration-treated portion is disposed in the surface portion of the film 84 as shown in FIG. 21A , a structure making adsorbing water or being separated from water difficult can be formed, and, if the hydration-treated portion is in the film 84 , as shown in FIG. 21B , the barrier effect can be made work effectively. In order to form the hydration-treated portion in the film 84 , after fabricating the second ceramic layer 86 on the base material 81 , the hydration treatment is performed and the first ceramic layer 85 is formed. It is desirable that the hydration-treated portions 85 a and 86 a are of thickness equal to or greater than 100 ⁇ m.
  • the film 84 on the base material 81 in the two-layer structure like this, it can widen the scope of its applicability with large degree of freedom, since materials of the two layers and position of the hydration treatment can be selected to better accommodate various specific requirements of the situation.
  • the same anodic oxidized film 83 as in the first example may be formed between the base material 81 and the film 84 , as shown in FIG. 22 .
  • a film 87 is formed on the surface of the base material 81 , and it has a first ceramic layer 88 formed of ceramic including at least one kind of element of the Group 3a in the periodic table; and a second ceramic layer 89 formed by thermal spraying of ceramic, wherein a hydration-treated portion 88 a formed in a surface portion of the first ceramic layer 88 .
  • the oxide including the element of the Group 3a in the periodic table is preferable.
  • the oxide including the element of the Group 3a in the periodic table is preferable.
  • Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 are preferable and Y 2 O 3 is particularly preferable.
  • the first ceramic layer 88 is of thickness ranging from 100 to 300 ⁇ m.
  • the first ceramic layer 88 can be formed preferably, in a similar way to the film 82 in the fourth example, by employing the technique for forming a thin-film such as the thermally spraying method, the PVD method and the CVD method. Further, it is possible to form the layer by employing the immersion method, the coating method, or the like.
  • the second ceramic layer 89 includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and, to be more specific, at least one kind of ceramic selected from the group consisting of B 4 C, MgO, Al 2 O 3 , SiC, Si 3 N 4 , SiO 2 , CaF 2 , Cr 2 O 3 , Y 2 O 3 , YF 3 , ZrO 2 , TaO 2 , CeO 2 , Ce 2 O 3 , CeF 3 and Nd 2 O 3 . It is desirable that the second ceramic layer 89 is of thickness ranging from 50 to 300 ⁇ m. Further, exactly the same material as in the fourth example can be used as the base material 81 .
  • the hydration-treated portion 88 a can be formed in the same way as the hydration-treated portion 82 a in the fourth example. Because the hydration-treated portion is formed in the surface portion of the film 87 , the film 87 can be made to have a structure difficult to adsorb water and release water. In addition, the barrier effect may be made work effectively by forming the hydration-treated portion 88 a inside the first ceramic layer 88 . It is desirable that the hydration-treated portion 88 a is of thickness equal to or greater than 100 ⁇ m.
  • the sealing-treated portion 89 a can be formed by using the same resin sealing or sol-gel method as described in the above-mentioned first to third embodiments.
  • the base material 81 can be protected sufficiently by installing the sealing-treated portions 89 a since the gas or the cleaning fluid infiltrating through fine holes of the second ceramic layer 89 , i.e., the thermally sprayed film, can be blocked effectively. Further, the sealing-treated portion 89 a can be formed at any position of the second ceramic layer 89 .
  • the film 87 can have a structure difficult to adsorb water and release water by the hydration-treated portion 88 a of the first ceramic layer 88 , simultaneously having excellent corrosion-resistance.
  • the base material 81 can be protected effectively by the barrier effect of the second ceramic layer 89 .
  • the existence of the sealing-treated portion 89 a can further enhance the barrier effect.
  • the first ceramic layer 88 and the second ceramic layer 89 may be installed in a reversed order.
  • protection effect on the base material 81 may be improved since the hydration-treated portion 88 a of the first ceramic layer 88 laid out next to the base material 81 can enhance the barrier effect effectually.
  • the same anodic oxidized film 83 as in the first example may be formed between the base material 81 and the film 87 .
  • a seventh example of the ring member will be described.
  • a hydration-treated portion 98 is formed in a surface portion of a sintered ceramic body 97 including the element of the Group 3a in the periodic table.
  • the hydration-treated portion 98 can be formed in the same manner as in the above-mentioned embodiment, and the hydration treatment generates the hydroxide including the element of the Group 3a in the periodic table.
  • the hydration-treated portion 98 is formed in the surface portion, so that a structure making it difficult to adsorb water or release water is formed. It is desirable that the hydration-treated portion 98 or the hydroxide film of this case is of thickness equal to or greater than 100 ⁇ m.
  • ceramic including an element of the Group 3a in the periodic table is preferably oxide including an element of the Group 3a in the periodic table.
  • Y 2 O 3 , CeO 2 , Ce 2 O 3 and Nd 2 O 3 are preferable and, in particular, Y 2 O 3 is desirable.
  • the present invention is not limited to the apparatus of this structure, and can be applied to the plasma processing vessel used in a parallel plate plasma etching apparatus having no magnetron; another plasma etching processing apparatus and etching apparatus such as an inductively coupled one; and an apparatus executing various plasma processes such as an ashing and a film forming process in addition to etching.
  • a plasma processing apparatus in accordance with the present invention is applicable to an apparatus executing plasma processes such as etching, e.g., on a semiconductor wafer and the like, because plasma states can be adjusted by applying a specified voltage to an electrode in a ring member.
  • the ring member of the present invention is desirable for a plasma process in a highly corrosive atmosphere, in particular, since a film formed on a base material is formed of ceramic with a high corrosion-resistance and a portion which functions as a barrier is installed.
  • FIG. 1 shows a vertical cross-sectional view of a plasma processing apparatus in accordance with an embodiment of the present invention
  • FIG. 2 illustrates an explanatory diagram of a controller of the plasma processing apparatus
  • FIGS. 3A to 3 D describe explanatory diagrams of plasma states in a plasma process using the plasma processing apparatus
  • FIGS. 4A to 4 C offer explanatory diagrams of multi-layers etched by using the plasma processing apparatus
  • FIG. 5 provides an explanatory diagram of another embodiment of the present invention.
  • FIG. 6 presents an explanatory diagram of still another embodiment of the present invention.
  • FIG. 7 depicts a plasma processing system including the plasma processing apparatus in accordance with an embodiment of the present invention.
  • FIG. 8 represents a vertical cross-sectional view of a plasma processing apparatus mounted with a ring member in accordance with an embodiment of the present invention
  • FIG. 9 depicts a cross-sectional view of a layer structure in a first example of the ring member in accordance with the present invention.
  • FIG. 10 sets forth a cross-sectional view of an example of adding an anodic oxidized film to the structure of FIG. 9 ;
  • FIGS. 11A to 11 C show cross-sectional views of layer structures in a second example of the ring member in accordance with an embodiment of the present invention
  • FIG. 12 illustrates a cross-sectional view of an example of adding the anodic oxidized film to the structures of FIGS. 11A to 11 C;
  • FIGS. 13A and 13B describe cross-sectional views of layer structures in a third example of the ring member in accordance with the embodiment of the present invention.
  • FIG. 14 offers a cross-sectional view of an example of adding the anodic oxidized film to the structures of FIGS. 13A and 13B ;
  • FIG. 15 provides a cross-sectional view of a layer structure in a first example of the ring member in accordance with the embodiment of the present invention
  • FIGS. 16A and 16B present patterns of X-ray analysis when hydration treatment is executed on a Y 2 O 3 film and when the hydration treatment is not executed on the Y 2 O 3 film;
  • FIG. 17 depicts adsorption of IPA when the hydration treatment is executed on the Y 2 O 3 film and when the hydration treatment is not executed on the Y 2 O 3 film;
  • FIGS. 18A to 18 C illustrate infiltrations of resin when the hydration treatment is executed on the Y 2 O 3 film and when the hydration treatment is not executed on the Y 2 O 3 film;
  • FIGS. 19A and 19B are photographs of a scanning electron microscope showing layer states before the hydration treatment and after the hydration treatment;
  • FIG. 20 describes a cross-sectional view of an example of adding an anodic oxidized film to the structure of FIG. 15 ;
  • FIGS. 21A and 21B offer cross-sectional views of layer structures in a second example of the ring member in accordance with an embodiment of the present invention
  • FIG. 22 provides a cross-sectional view of an example of adding the anodic oxidized film to the structure of FIGS. 21A or 21 B;
  • FIG. 23 presents a cross-sectional view of a layer structure in a third example of the ring member in accordance with an embodiment of the present invention.
  • FIG. 24 depicts a cross-sectional view of another layer structure in the third example of the ring member in accordance with an embodiment of the present invention.
  • FIG. 25 represents a cross-sectional view of still another layer structure in the third example of the ring member in accordance with an embodiment of the present invention.
  • FIG. 26 sets forth a cross-sectional view of an example of adding the anodic oxidized film to the structure of FIG. 16 ;
  • FIG. 27 illustrates a schematic diagram of the ring member in accordance with an embodiment of the present invention.
  • FIG. 28 is an explanatory drawing of a conventional plasma processing apparatus.

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Cited By (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030200929A1 (en) * 1999-12-10 2003-10-30 Hayashi Otsuki Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20040013754A1 (en) * 2001-03-29 2004-01-22 Nobuyuki Hirai Rubber strip, method and device for manufacturing tire and tire component using the rubber strip
US20040060661A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US20040060657A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US20040061447A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20040060656A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US20040063333A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20040173155A1 (en) * 2002-09-30 2004-09-09 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US20040188502A1 (en) * 2003-03-31 2004-09-30 Sanyo Electric Co., Ltd. Metal mask and method of printing lead-free solder paste using same
US20040216667A1 (en) * 2002-11-28 2004-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel
US20050107858A1 (en) * 2003-07-22 2005-05-19 Epic Biosonics Inc. Implantable electrical cable and method of making
US20050103268A1 (en) * 2002-09-30 2005-05-19 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
US20060066247A1 (en) * 2004-06-21 2006-03-30 Tokyo Electron Limited Plasma processing apparatus and method
US20060099457A1 (en) * 2004-11-08 2006-05-11 Tocalo Co., Ltd. Method of producing ceramic spray-coated member, program for conducting the method, storage medium and ceramic spray-coated member
US20060102080A1 (en) * 2004-11-12 2006-05-18 Advanced Ion Beam Technology, Inc. Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities
US20060183344A1 (en) * 2003-03-31 2006-08-17 Tokyo Electron Limited Barrier layer for a processing element and a method of forming the same
US20070054092A1 (en) * 2005-09-08 2007-03-08 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US20070215283A1 (en) * 2006-03-20 2007-09-20 Tokyo Electron Limited Plasma treating apparatus and plasma treating method
US20070218302A1 (en) * 2006-03-20 2007-09-20 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US20080105203A1 (en) * 2006-09-28 2008-05-08 Tokyo Electron Limited Component for substrate processing apparatus and method of forming film on the component
US20080149598A1 (en) * 2006-12-25 2008-06-26 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
US20080241420A1 (en) * 2007-03-30 2008-10-02 Rajinder Dhindsa Method and apparatus for dc voltage control on rf-powered electrode
US20080236748A1 (en) * 2007-03-30 2008-10-02 Hiroyuki Kobayashi Plasma processing apparatus
US20090026170A1 (en) * 2007-03-12 2009-01-29 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction
US20090075687A1 (en) * 2005-05-15 2009-03-19 Sony Computer Entertainment Inc. Center Device
US20090101070A1 (en) * 2006-03-27 2009-04-23 Tohoku University Member for a Plasma Processing Apparatus and Method of Manufacturing the Same
US20090120358A1 (en) * 2005-08-22 2009-05-14 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
US20090130436A1 (en) * 2005-08-22 2009-05-21 Yoshio Harada Spray coating member having excellent heat emmision property and so on and method for producing the same
US20090133717A1 (en) * 2004-11-08 2009-05-28 Tokyo Electron Limited Ceramic sprayed member-cleaning method, program for implementing the method, storage medium storing the program, and ceramic sprayed member
US20090208667A1 (en) * 2006-03-20 2009-08-20 Tocalo Co. Ltd Method for manufacturing ceramic covering member for semiconductor processing apparatus
US20090239269A1 (en) * 2006-10-10 2009-09-24 Yoshinori Tajima Method for production of l-amino acid
WO2009116833A2 (ko) * 2008-03-20 2009-09-24 주식회사 아이피에스 진공처리장치
US20090242127A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Plasma etching apparatus and method, and computer-readable storage medium
WO2010011521A2 (en) * 2008-07-23 2010-01-28 Applied Materials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20100243620A1 (en) * 2009-03-27 2010-09-30 Tokyo Electron Limited Plasma processing apparatus
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
US20120006492A1 (en) * 2001-07-10 2012-01-12 Tokyo Electron Limited Plasma processor and plasma processing method
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US20120206870A1 (en) * 2008-10-24 2012-08-16 Apple Inc. Thermal spray coating for seamless and radio-transparent electronic device housing
US20120258565A1 (en) * 2011-04-08 2012-10-11 Tocalo Co., Ltd. Substrate processing apparatus and method for forming coating film on surface of reaction tube used for the substrate processing apparatus
WO2012166364A1 (en) * 2011-05-31 2012-12-06 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
CN103177926A (zh) * 2011-12-23 2013-06-26 朗姆研究公司 具有耐腐蚀部件的等离子体处理装置
US20130172865A1 (en) * 2010-10-06 2013-07-04 Electronics And Telecommunications Research Institute Target structure used for generating charged particle beam, method of manufacturing the same and medical appliance using the same
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20140224427A1 (en) * 2013-02-14 2014-08-14 Fujifilm Corporation Dry etching apparatus and clamp therefor
US20140374901A1 (en) * 2013-06-21 2014-12-25 Samsung Electronics Co., Ltd Semiconductor package and method of fabricating the same
US20160076129A1 (en) * 2014-09-17 2016-03-17 Tokyo Electron Limited Component for plasma processing apparatus, and manufacturing method therefor
US9580331B2 (en) 2011-05-27 2017-02-28 Nikon Corporation CaF2 polycrystalline body, focus ring, plasma processing apparatus, and method for producing CaF2 polycrystalline body
US20170352566A1 (en) * 2016-06-07 2017-12-07 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
TWI612186B (zh) * 2012-07-05 2018-01-21 Nikon Corp 多晶ＣａＦ構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法
US20180350566A1 (en) * 2017-06-06 2018-12-06 Tokyo Electron Limited Plasma processing apparatus and plasma control method
US20180366360A1 (en) * 2017-06-16 2018-12-20 Tokyo Electron Limited Electrostatic attraction method
US10276405B2 (en) * 2014-12-16 2019-04-30 Tokyo Electron Limited Plasma processing apparatus
CN109727839A (zh) * 2017-10-30 2019-05-07 细美事有限公司 支承单元和包括该支承单元的基板处理装置
US10366865B2 (en) 2011-05-31 2019-07-30 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US20190287770A1 (en) * 2018-03-16 2019-09-19 Hitachi High-Technologies Corporation Plasma processing apparatus
US10443125B2 (en) 2017-05-10 2019-10-15 Applied Materials, Inc. Flourination process to create sacrificial oxy-flouride layer
US10529539B2 (en) 2004-06-21 2020-01-07 Tokyo Electron Limited Plasma processing apparatus and method
CN112242290A (zh) * 2019-07-16 2021-01-19 东京毅力科创株式会社 等离子体处理方法及等离子体处理装置
US20210159099A1 (en) * 2016-09-14 2021-05-27 SCREEN Holdings Co., Ltd. Light-irradiation thermal treatment apparatus
US11456159B2 (en) * 2019-10-25 2022-09-27 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
US11488807B2 (en) * 2019-09-05 2022-11-01 Tokyo Electron Limited Plasma processing apparatus, processing method, and upper electrode structure
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
TWI821614B (zh) * 2019-12-23 2023-11-11 大陸商中微半導體設備（上海）股份有限公司 等離子體蝕刻裝置及其工作方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034180B2 (en) 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US8608900B2 (en) * 2005-10-20 2013-12-17 B/E Aerospace, Inc. Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP4936297B2 (ja) * 2007-09-04 2012-05-23 シャープ株式会社 プラズマ処理装置およびプラズマ処理方法ならびに半導体素子
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US20110220289A1 (en) * 2008-12-02 2011-09-15 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Member for plasma treatment apparatus and production method thereof
WO2010079753A1 (ja) * 2009-01-09 2010-07-15 株式会社アルバック プラズマ処理装置
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
US9299539B2 (en) * 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
WO2012166265A2 (en) * 2011-05-31 2012-12-06 Applied Materials, Inc. Apparatus and methods for dry etch with edge, side and back protection
CN103165494B (zh) * 2011-12-08 2015-12-09 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN106104775B (zh) * 2014-01-31 2019-05-21 应用材料公司 腔室涂层
US10262886B2 (en) * 2014-09-30 2019-04-16 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
KR101949406B1 (ko) * 2016-07-07 2019-02-20 세메스 주식회사 기판 처리 장치
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
CN108074787A (zh) * 2016-11-10 2018-05-25 北京北方华创微电子装备有限公司 下电极结构及半导体加工设备
JP6906377B2 (ja) * 2017-06-23 2021-07-21 東京エレクトロン株式会社 排気プレート及びプラズマ処理装置
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
JP7234036B2 (ja) * 2019-05-28 2023-03-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR20230058069A (ko) * 2020-09-09 2023-05-02 미쓰비시 마테리알 가부시키가이샤 내플라즈마 코팅막, 그 막 형성용 졸 겔액, 내플라즈마 코팅막의 형성 방법 및 내플라즈마 코팅막 형성 기재
CN112652515B (zh) * 2020-12-09 2023-08-15 长江存储科技有限责任公司 等离子体刻蚀装置及其边缘环

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357387A (en) * 1981-08-20 1982-11-02 Subtex, Inc. Flame resistant insulating fabric compositions prepared by plasma spraying
US5716486A (en) * 1994-01-13 1998-02-10 Selwyn; Gary S. Method and apparatus for tuning field for plasma processing using corrected electrode
US5897752A (en) * 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US5925228A (en) * 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US20030019582A1 (en) * 2001-07-24 2003-01-30 Tokyo Electron Limited Of Tbs Broadcast Center Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US20030113479A1 (en) * 2001-08-23 2003-06-19 Konica Corporation Atmospheric pressure plasma treatmet apparatus and atmospheric pressure plasma treatment method
US20040002221A1 (en) * 2002-06-27 2004-01-01 O'donnell Robert J. Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US6726799B2 (en) * 2000-12-07 2004-04-27 Semiconductor Leading Edge Technologies, Inc. Plasma etching apparatus with focus ring and plasma etching method
US6771483B2 (en) * 2000-01-21 2004-08-03 Tocalo Co., Ltd. Electrostatic chuck member and method of producing the same
US20040177927A1 (en) * 2001-07-10 2004-09-16 Akihiro Kikuchi Plasma procesor and plasma processing method

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04279044A (ja) 1991-01-09 1992-10-05 Sumitomo Metal Ind Ltd 試料保持装置
JPH0570922A (ja) 1991-08-09 1993-03-23 Koichi Moriya 複合材の無機化合物による封孔処理法
JPH0611346A (ja) 1992-06-25 1994-01-21 Fujita Corp 自動測量システム
JPH0658163A (ja) * 1992-08-08 1994-03-01 Mazda Motor Corp ロータリピストンエンジン
JPH07226395A (ja) * 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
JPH08162444A (ja) * 1994-12-08 1996-06-21 Tokyo Electron Ltd プラズマ処理装置及びその制御方法
JP3220619B2 (ja) * 1995-05-24 2001-10-22 松下電器産業株式会社 ガス伝熱プラズマ処理装置
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JPH0975832A (ja) 1995-09-11 1997-03-25 Nittetsu Hard Kk 耐食耐摩耗性表面溶射層を有するボイラーチューブ
JP3371646B2 (ja) * 1995-10-20 2003-01-27 ソニー株式会社 ドライエッチング方法
JPH09298190A (ja) 1996-05-02 1997-11-18 Iwaki Coating Kogyo:Kk ドライエッチング装置用電極の製造方法
JPH10277707A (ja) 1997-04-03 1998-10-20 Mishima Kosan Co Ltd 連続鋳造用鋳型に使用する鋳型片及びその製造方法
JP2000164583A (ja) 1998-06-24 2000-06-16 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JP3066007B2 (ja) 1998-06-24 2000-07-17 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
JP4136137B2 (ja) 1998-11-26 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
JP4119551B2 (ja) * 1998-12-01 2008-07-16 東京エレクトロン株式会社 基板保持台、及びプラズマ処理装置
JP2000183038A (ja) * 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP3632542B2 (ja) * 2000-01-26 2005-03-23 松下電器産業株式会社 プラズマ処理装置
JP2002088462A (ja) 2000-09-14 2002-03-27 Nippon Steel Corp 封孔処理方法及び封孔処理された溶射皮膜とその皮膜を施したファンまたはブロワー
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
KR100945315B1 (ko) 2000-12-12 2010-03-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 용기의 재생 방법, 플라즈마 처리 용기내부 부재, 플라즈마 처리 용기 내부 부재의 제조 방법,및 플라즈마 처리 장치
CN101250680B (zh) 2000-12-12 2013-06-26 东京毅力科创株式会社 等离子体处理容器内部件以及等离子体处理装置
JP2002228803A (ja) 2001-01-30 2002-08-14 Konica Corp 低反射積層体の製造方法及び低反射積層体
US6830622B2 (en) 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
JP2003031553A (ja) * 2001-07-16 2003-01-31 Nec Kansai Ltd プラズマエッチング装置
JP4279044B2 (ja) 2003-05-13 2009-06-17 ヤマハ発動機株式会社 部品認識装置及び同装置を備えた表面実装機

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357387A (en) * 1981-08-20 1982-11-02 Subtex, Inc. Flame resistant insulating fabric compositions prepared by plasma spraying
US5716486A (en) * 1994-01-13 1998-02-10 Selwyn; Gary S. Method and apparatus for tuning field for plasma processing using corrected electrode
US5925228A (en) * 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
US5897752A (en) * 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6771483B2 (en) * 2000-01-21 2004-08-03 Tocalo Co., Ltd. Electrostatic chuck member and method of producing the same
US6726799B2 (en) * 2000-12-07 2004-04-27 Semiconductor Leading Edge Technologies, Inc. Plasma etching apparatus with focus ring and plasma etching method
US20040177927A1 (en) * 2001-07-10 2004-09-16 Akihiro Kikuchi Plasma procesor and plasma processing method
US20030019582A1 (en) * 2001-07-24 2003-01-30 Tokyo Electron Limited Of Tbs Broadcast Center Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US20030113479A1 (en) * 2001-08-23 2003-06-19 Konica Corporation Atmospheric pressure plasma treatmet apparatus and atmospheric pressure plasma treatment method
US20040002221A1 (en) * 2002-06-27 2004-01-01 O'donnell Robert J. Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor

Cited By (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080069966A1 (en) * 1999-12-10 2008-03-20 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US7879179B2 (en) 1999-12-10 2011-02-01 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US7846291B2 (en) 1999-12-10 2010-12-07 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20030200929A1 (en) * 1999-12-10 2003-10-30 Hayashi Otsuki Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20080070032A1 (en) * 1999-12-10 2008-03-20 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20040013754A1 (en) * 2001-03-29 2004-01-22 Nobuyuki Hirai Rubber strip, method and device for manufacturing tire and tire component using the rubber strip
US9437402B2 (en) 2001-07-10 2016-09-06 Tokyo Electron Limited Plasma processor and plasma processing method
US8904957B2 (en) * 2001-07-10 2014-12-09 Tokyo Electron Limited Plasma processor and plasma processing method
US9728381B2 (en) * 2001-07-10 2017-08-08 Tokyo Electron Limited Plasma processor and plasma processing method
US8387562B2 (en) * 2001-07-10 2013-03-05 Tokyo Electron Limited Plasma processor and plasma processing method
US20130174983A1 (en) * 2001-07-10 2013-07-11 Tokyo Electron Limited Plasma processor and plasma processing method
US20150083332A1 (en) * 2001-07-10 2015-03-26 Tokyo Electron Limited Plasma processor and plasma processing method
US20120006492A1 (en) * 2001-07-10 2012-01-12 Tokyo Electron Limited Plasma processor and plasma processing method
US20070034337A1 (en) * 2002-09-30 2007-02-15 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US20070125494A1 (en) * 2002-09-30 2007-06-07 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7811428B2 (en) 2002-09-30 2010-10-12 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US20050103268A1 (en) * 2002-09-30 2005-05-19 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20070028839A1 (en) * 2002-09-30 2007-02-08 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US8057600B2 (en) 2002-09-30 2011-11-15 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US8118936B2 (en) 2002-09-30 2012-02-21 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20070096658A1 (en) * 2002-09-30 2007-05-03 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070107846A1 (en) * 2002-09-30 2007-05-17 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20040061447A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070204794A1 (en) * 2002-09-30 2007-09-06 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20040060661A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US8117986B2 (en) 2002-09-30 2012-02-21 Tokyo Electron Limited Apparatus for an improved deposition shield in a plasma processing system
US7678226B2 (en) 2002-09-30 2010-03-16 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US20040173155A1 (en) * 2002-09-30 2004-09-09 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US20040063333A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20040060657A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US20040060656A1 (en) * 2002-09-30 2004-04-01 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US8449715B2 (en) 2002-11-28 2013-05-28 Tokyo Electron Limited Internal member of a plasma processing vessel
US8877002B2 (en) 2002-11-28 2014-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel
US20040216667A1 (en) * 2002-11-28 2004-11-04 Tokyo Electron Limited Internal member of a plasma processing vessel
US20100307687A1 (en) * 2002-11-28 2010-12-09 Tokyo Electron Limited Internal member of a plasma processing vessel
US7780786B2 (en) 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
US20060183344A1 (en) * 2003-03-31 2006-08-17 Tokyo Electron Limited Barrier layer for a processing element and a method of forming the same
US20040188502A1 (en) * 2003-03-31 2004-09-30 Sanyo Electric Co., Ltd. Metal mask and method of printing lead-free solder paste using same
US20050107858A1 (en) * 2003-07-22 2005-05-19 Epic Biosonics Inc. Implantable electrical cable and method of making
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
US20080314321A1 (en) * 2004-03-08 2008-12-25 Muneo Furuse Plasma processing apparatus
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US9023436B2 (en) 2004-05-06 2015-05-05 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US10529539B2 (en) 2004-06-21 2020-01-07 Tokyo Electron Limited Plasma processing apparatus and method
US10546727B2 (en) 2004-06-21 2020-01-28 Tokyo Electron Limited Plasma processing apparatus and method
US9490105B2 (en) 2004-06-21 2016-11-08 Tokyo Electron Limited Plasma processing apparatus and method
US10854431B2 (en) 2004-06-21 2020-12-01 Tokyo Electron Limited Plasma processing apparatus and method
US8603293B2 (en) 2004-06-21 2013-12-10 Tokyo Electron Limited Plasma processing apparatus and method
US20060066247A1 (en) * 2004-06-21 2006-03-30 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US20100068395A1 (en) * 2004-11-08 2010-03-18 Tokyo Electron Limited Method of producing ceramic spray-coated member, program for conducting the method, storage medium and ceramic spray-coated member
US7942975B2 (en) 2004-11-08 2011-05-17 Tokyo Electron Limited Ceramic sprayed member-cleaning method
US20060099457A1 (en) * 2004-11-08 2006-05-11 Tocalo Co., Ltd. Method of producing ceramic spray-coated member, program for conducting the method, storage medium and ceramic spray-coated member
US20090133717A1 (en) * 2004-11-08 2009-05-28 Tokyo Electron Limited Ceramic sprayed member-cleaning method, program for implementing the method, storage medium storing the program, and ceramic sprayed member
US20060102080A1 (en) * 2004-11-12 2006-05-18 Advanced Ion Beam Technology, Inc. Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities
US20090075687A1 (en) * 2005-05-15 2009-03-19 Sony Computer Entertainment Inc. Center Device
US20090120358A1 (en) * 2005-08-22 2009-05-14 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
US8231986B2 (en) 2005-08-22 2012-07-31 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
US20090130436A1 (en) * 2005-08-22 2009-05-21 Yoshio Harada Spray coating member having excellent heat emmision property and so on and method for producing the same
US7767268B2 (en) 2005-09-08 2010-08-03 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US20100203288A1 (en) * 2005-09-08 2010-08-12 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US20070054092A1 (en) * 2005-09-08 2007-03-08 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US8053058B2 (en) 2005-09-08 2011-11-08 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US20090208667A1 (en) * 2006-03-20 2009-08-20 Tocalo Co. Ltd Method for manufacturing ceramic covering member for semiconductor processing apparatus
US20070218302A1 (en) * 2006-03-20 2007-09-20 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
US20110030896A1 (en) * 2006-03-20 2011-02-10 Tokyo Electron Limited Plasma treating apparatus and plasma treating method
US20070215283A1 (en) * 2006-03-20 2007-09-20 Tokyo Electron Limited Plasma treating apparatus and plasma treating method
US7850864B2 (en) 2006-03-20 2010-12-14 Tokyo Electron Limited Plasma treating apparatus and plasma treating method
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
US20090101070A1 (en) * 2006-03-27 2009-04-23 Tohoku University Member for a Plasma Processing Apparatus and Method of Manufacturing the Same
KR101030937B1 (ko) * 2006-03-27 2011-04-28 가부시키가이샤 니혼 세라떽꾸 플라즈마 처리 장치용 부재 및 그 제조 방법
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US20080105203A1 (en) * 2006-09-28 2008-05-08 Tokyo Electron Limited Component for substrate processing apparatus and method of forming film on the component
US8367371B2 (en) 2006-10-10 2013-02-05 Ajinomoto Co., Inc. Method for production of L-amino acid
US20090239269A1 (en) * 2006-10-10 2009-09-24 Yoshinori Tajima Method for production of l-amino acid
US20080149598A1 (en) * 2006-12-25 2008-06-26 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
US20090026170A1 (en) * 2007-03-12 2009-01-29 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction
US8343306B2 (en) * 2007-03-12 2013-01-01 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction
US20080241420A1 (en) * 2007-03-30 2008-10-02 Rajinder Dhindsa Method and apparatus for dc voltage control on rf-powered electrode
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US20080236748A1 (en) * 2007-03-30 2008-10-02 Hiroyuki Kobayashi Plasma processing apparatus
WO2009116833A3 (ko) * 2008-03-20 2009-12-17 주식회사 아이피에스 진공처리장치
TWI503883B (zh) * 2008-03-20 2015-10-11 Wonik Ips Co Ltd 真空處理裝置
WO2009116833A2 (ko) * 2008-03-20 2009-09-24 주식회사 아이피에스 진공처리장치
US20090242127A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Plasma etching apparatus and method, and computer-readable storage medium
WO2010011521A3 (en) * 2008-07-23 2010-04-22 Applied Materials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
WO2010011521A2 (en) * 2008-07-23 2010-01-28 Applied Materials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US20140225489A1 (en) * 2008-10-24 2014-08-14 Apple Inc. Radio-transparent coating for electronic device housing
US8738099B2 (en) * 2008-10-24 2014-05-27 Apple Inc. Thermal spray coating for seamless and radio-transparent electronic device housing
US20120206870A1 (en) * 2008-10-24 2012-08-16 Apple Inc. Thermal spray coating for seamless and radio-transparent electronic device housing
US20100243620A1 (en) * 2009-03-27 2010-09-30 Tokyo Electron Limited Plasma processing apparatus
US20110011534A1 (en) * 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
US9033964B2 (en) * 2010-10-06 2015-05-19 Electronics And Telecommunications Research Institute Target structure used for generating charged particle beam, method of manufacturing the same and medical appliance using the same
US20130172865A1 (en) * 2010-10-06 2013-07-04 Electronics And Telecommunications Research Institute Target structure used for generating charged particle beam, method of manufacturing the same and medical appliance using the same
US20120258565A1 (en) * 2011-04-08 2012-10-11 Tocalo Co., Ltd. Substrate processing apparatus and method for forming coating film on surface of reaction tube used for the substrate processing apparatus
US9580331B2 (en) 2011-05-27 2017-02-28 Nikon Corporation CaF2 polycrystalline body, focus ring, plasma processing apparatus, and method for producing CaF2 polycrystalline body
US9934979B2 (en) 2011-05-31 2018-04-03 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
TWI559392B (zh) * 2011-05-31 2016-11-21 蘭姆研究公司 電漿蝕刻反應器之陶瓷噴淋頭用之氣體分配系統
WO2012166364A1 (en) * 2011-05-31 2012-12-06 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US10366865B2 (en) 2011-05-31 2019-07-30 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
CN103177926A (zh) * 2011-12-23 2013-06-26 朗姆研究公司 具有耐腐蚀部件的等离子体处理装置
TWI612186B (zh) * 2012-07-05 2018-01-21 Nikon Corp 多晶ＣａＦ構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法
US20140224427A1 (en) * 2013-02-14 2014-08-14 Fujifilm Corporation Dry etching apparatus and clamp therefor
US20140374901A1 (en) * 2013-06-21 2014-12-25 Samsung Electronics Co., Ltd Semiconductor package and method of fabricating the same
US20160076129A1 (en) * 2014-09-17 2016-03-17 Tokyo Electron Limited Component for plasma processing apparatus, and manufacturing method therefor
US10276405B2 (en) * 2014-12-16 2019-04-30 Tokyo Electron Limited Plasma processing apparatus
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US11127619B2 (en) * 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
US20170352566A1 (en) * 2016-06-07 2017-12-07 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
US20210159099A1 (en) * 2016-09-14 2021-05-27 SCREEN Holdings Co., Ltd. Light-irradiation thermal treatment apparatus
US11881420B2 (en) * 2016-09-14 2024-01-23 SCREEN Holdings Co., Ltd. Light-irradiation thermal treatment apparatus
US10443125B2 (en) 2017-05-10 2019-10-15 Applied Materials, Inc. Flourination process to create sacrificial oxy-flouride layer
US10563303B2 (en) 2017-05-10 2020-02-18 Applied Materials, Inc. Metal oxy-flouride films based on oxidation of metal flourides
US10840069B2 (en) * 2017-06-06 2020-11-17 Tokyo Electron Limited Plasma processing apparatus and plasma control method
KR102488147B1 (ko) 2017-06-06 2023-01-12 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 제어 방법
US20180350566A1 (en) * 2017-06-06 2018-12-06 Tokyo Electron Limited Plasma processing apparatus and plasma control method
KR20180133328A (ko) * 2017-06-06 2018-12-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 제어 방법
US10832930B2 (en) * 2017-06-16 2020-11-10 Tokyo Electron Limited Electrostatic attraction method
US20180366360A1 (en) * 2017-06-16 2018-12-20 Tokyo Electron Limited Electrostatic attraction method
CN109727839A (zh) * 2017-10-30 2019-05-07 细美事有限公司 支承单元和包括该支承单元的基板处理装置
US20190287770A1 (en) * 2018-03-16 2019-09-19 Hitachi High-Technologies Corporation Plasma processing apparatus
US20210020407A1 (en) * 2019-07-16 2021-01-21 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US11742180B2 (en) * 2019-07-16 2023-08-29 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
CN112242290A (zh) * 2019-07-16 2021-01-19 东京毅力科创株式会社 等离子体处理方法及等离子体处理装置
US11488807B2 (en) * 2019-09-05 2022-11-01 Tokyo Electron Limited Plasma processing apparatus, processing method, and upper electrode structure
US11456159B2 (en) * 2019-10-25 2022-09-27 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
TWI821614B (zh) * 2019-12-23 2023-11-11 大陸商中微半導體設備（上海）股份有限公司 等離子體蝕刻裝置及其工作方法

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TWI373798B (ko) 2012-10-01
TW200501253A (en) 2005-01-01
US20090104781A1 (en) 2009-04-23
US8043971B2 (en) 2011-10-25
CN100418187C (zh) 2008-09-10
KR20040072467A (ko) 2004-08-18
KR100540051B1 (ko) 2006-01-11

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