TWI612186B - 多晶ＣａＦ構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法 - Google Patents

多晶ＣａＦ構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法 Download PDF

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TWI612186B
TWI612186B TW102124104A TW102124104A TWI612186B TW I612186 B TWI612186 B TW I612186B TW 102124104 A TW102124104 A TW 102124104A TW 102124104 A TW102124104 A TW 102124104A TW I612186 B TWI612186 B TW I612186B
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focus ring
polycrystalline
plasma processing
processing apparatus
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Naoyasu Uehara
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Abstract

本發明之課題在於不使用接著劑或帶構件等污染源而使複數構件接合。多晶CaF2構件係由組合體構成，該組合體係將由CaF2構成之複數多晶體壓接而成。

Description

多晶CaF 2 構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法
本發明係關於一種多晶CaF2構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法。
先前以來，作為半導體製造裝置用之耐電漿構件，已知有由複數構件構成之聚焦環(例如專利文獻1、2)。
[專利文獻1]日本特開2009-290087號公報
[專利文獻2]日本特開2011-3730號公報
然而，存在將複數構件接合時所使用之接著劑或帶構件成為污染源的問題。
本發明之第1態樣的多晶CaF2構件之特徵在於：其係由組合體構成，該組合體係將由CaF2構成之複數多晶體壓接而成。
本發明之第2態樣的聚焦環之製造方法之特徵在於，具有如下步驟：準備由多晶CaF2構成之複數局部構件；及將複數局部構件彼此壓接，形成一個多晶CaF2構件。
根據本發明，可獲得由藉由壓接而將複數多晶體之接合面接 合而成之組合體構成的多晶CaF2構件，因此，能提供不會因接著劑或帶構件而產生污染的聚焦環。
1、100‧‧‧聚焦環
2、200、300‧‧‧局部構件
10‧‧‧電漿處理裝置
圖1係表示本發明之實施形態之聚焦環之外觀的圖。
圖2係具備聚焦環之電漿處理裝置之示意圖。
參照圖式，對本發明之實施形態的多晶CaF2(氟化鈣)構件之一例即聚焦環進行說明。本實施形態之聚焦環係電漿處理裝置中使用之構件，且係藉由將由多晶CaF2製造之複數局部構件通過壓接進行接合而製造。再者，該實施形態係為了更好地理解發明之宗旨而進行具體說明，只要未特別地指定，則並不限定本發明。
圖1中表示實施形態之聚焦環1之構成。如圖1(a)所示，聚焦環1係由3個局部構件2接合而成之組合體，且形成為環狀。構成聚焦環1之1個局部構件2具有如圖1(b)所示之形狀。局部構件2具有與其他局部構件2接合之接合面21、及階差部22，且3個局部構件2經由接合面21接合，藉此形成聚焦環1。聚焦環1係為了於利用電漿處理裝置對被處理物進行電漿蝕刻時，降低因非均勻的電漿分佈而引起之被處理物之蝕刻速度的非均勻性，而設於被處理物之周圍。而且，能利用階差部22支撐被處理物，因此亦可用作使被處理物移動時或操作時之支撐件。當被處理物於乾式蝕刻步驟中暴露於電漿中時，聚焦環1亦同樣暴露於電漿中且被蝕刻。因此，要求聚焦環1具有較高的耐蝕刻性。
形成聚焦環1之局部構件2的個數並不限於上述之3個，可根據聚焦環1之大小等而由最適合之個數的局部構件2形成。再者，關於聚焦環1之製造方法的詳細內容，於下文進行說明。
局部構件2係如上所述由多晶CaF2製造，且具有優良的加工性及耐腐蝕性。為了使局部構件2具有優良的加工性，而將形成局部構件2之多晶CaF2的相對密度設定為94.0%以上。作為更佳的態樣，可將多晶CaF2的相對密度設為99.0%以上。而且，為了使局部構件2具有耐腐蝕性，較佳為，使形成局部構件2之多晶CaF2之結晶粒子的平均粒徑為200μm以上。
再者，本申請案中之多晶CaF2之相對密度係使用阿基米德法對多晶CaF2之密度進行測定，且能以使該多晶CaF2之密度與單晶CaF2之密度之比以百分比表示的形式而求出。而且，多晶CaF2之平均粒徑係藉由如下方式求出：利用掃描型電子顯微鏡(SEM)對1個試料的任意3個視野進行觀察，且依據JISR1670「精密陶瓷之粒度測定方法」，計量各個視野內之結晶粒子之長軸及短軸，且取其平均值。
以下，對於CaF2、單晶CaF2及多晶CaF2所具有的性質進行說明。就CaF2而言，與作為氟化物之MgF2、BaF2相比，其係潮解性較低的穩定的氟化物。而且，CaF2之耐氟電漿性、耐HF(氟化氫)性、耐藥品性、耐熱性優良，因此可有效地作為耐電漿構件、坩堝構件。單晶CaF2係自較高的紫外區域至紅外區域具有較高的透過率特性，因此可用作透鏡材料。然而，單晶CaF2具有解理性，故具有容易因振動或衝擊而破碎的性質。相對於此，多晶CaF2係由微小的結晶結合而構成，因此，整體不具有解理性， 於此方面而言較之單晶CaF2難破碎。
繼而，對於多晶CaF2之結晶粒子之平均粒徑與耐腐蝕性的關係進行說明。作為多晶CaF2之結晶粒子之耐腐蝕性，尤其針對對於蝕刻之耐性(耐蝕刻性)進行說明。本實施形態之局部構件2之製造中使用之多晶CaF2的結晶粒子之平均粒徑為200μm以上。經過本發明人的研究發現，多晶CaF2中，隨著結晶粒徑之增大，耐腐蝕性變高，若結晶粒徑達到200μm以上則耐腐蝕性飽和。蝕刻係自結晶界面起進行，因此若因結晶粒徑增大而使結晶界面減少則容易被蝕刻之界面減少。因此，隨著多晶CaF2之結晶粒徑增大，耐腐蝕性變高。關於本實施形態中使用之多晶CaF2，推斷，藉由將結晶粒子之平均粒徑設為200μm以上，可使其耐腐蝕性接近單晶CaF2所具有之耐腐蝕性。因此，實施形態中使用之多晶CaF2除了具備無解理性這一多晶體所具有的優點之外，亦具備耐腐蝕性優良這一單晶體所具有的優點。
由具有上述特性之多晶CaF2構成的局部構件2之製造方法係如下所述。首先，以如下方法獲得相對密度為94.0%以上、且結晶粒子之平均粒徑為200μm以上的多晶CaF2。
CaF2之粉末原料之粒徑(中值粒徑)較佳為3μm以下，更佳為0.5μm以下。於CaF2之粉末原料之粒徑較大的情況下，較佳為利用球磨機等預先進行粉碎後使用者。
使用上述CaF2粉末原料，例如利用CIP法(冷均壓)、注漿法而進行成形。CIP法係藉由金屬模加壓而對CaF2粉末原料進行臨時成形，且使臨時成形體成為真空封裝之後，設於CIP裝置中，例如於100MPa下 進行1分鐘的壓力保持，藉此作成成形體。注漿法係將CaF2粉末原料與水混合而作成之漿料裝入石膏模中，例如於室溫下靜置48小時以上而獲得成形體之後，將該成形體自石膏模中取出而利用乾燥爐於80℃下乾燥48小時。
將以上述方式獲得之成形體導入真空燒結爐內，於真空環境下進行燒結。自緻密化及防止CaF2氧化的目的出發，燒結步驟時之真空度理想的是10Pa以下。燒結步驟中，成形體係於1400℃以下燒結6小時以上。再者，1400℃係CaF2之熔點以下的溫度。結果，可獲得相對密度為94.0%以上、且結晶粒子之平均粒徑為200μm以上的多晶CaF2的成形體。
繼而，將多晶CaF2之成形體加工成所需的形狀。而且，以使形成聚焦環1時之接合面(圖1之符號21)之表面粗糙度Ra成為1.0μm以下的方式，藉由機械加工進行研磨。結果，製造出局部構件2。
使以上述方式製造之一個局部構件2之接合面21與其他局部構件2之接合面21接觸，於真空環境或非活性氣體環境中加熱至規定的溫度，且以使接合面21之接觸面受到1MPa以上的負載的方式對各局部構件2加壓。結果，製造出如圖1所示之聚焦環1。就聚焦環1而言，因係將使用本實施形態之多晶CaF2所製造之局部構件2接合，故而耐腐蝕性、加工性優良，且容易大型化。
圖1(c)係聚焦環1之變化例。圖1(c)所示之聚焦環100係將3個局部構件200與3個局部構件300共計6個局部構件接合而成之組合體。局部構件200及局部構件300具有如圖1(d)所示之形狀。聚焦環100之徑向上的局部構件200之寬度L1與局部構件300之寬度L2係設定為不同的長度，且寬度L2的長度長於寬度L1。局部構件200彼此係經由接合 面201而接合，局部構件300彼此係經由接合面301而接合。而且，局部構件200與局部構件300係經由接合面202及接合面302而接合。再者，藉由將局部構件300之寬度L2設定為長於局部構件200之寬度L1，而使得可於與局部構件300之接合面302相同的平面上設置未接合局部構件200的面303。該未接合局部構件200之面303係作為聚焦環100之階差部而發揮功能。
形成聚焦環100時，可將6個局部構件組裝成聚焦環形狀，對該6個局部構件同時進行壓接；亦可形成由局部構件200彼此構成之環狀構件及由局部構件300彼此構成之環狀構件，且將該環狀構件彼此上下組合而進行壓接。再者，形成聚焦環100之局部構件200及300的個數並不限於上述之6個，可根據聚焦環100的大小等而由最適合之個數的局部構件200及300形成。
圖2係具備上述聚焦環1之電漿處理裝置的示意圖。圖2之電漿處理裝置10中，於具有氣體供給口6及氣體排出口7之腔室5內，設有上部電極8及下部電極9。於下部電極9之上表面，設有用於支撐被處理物3的靜電吸盤11及聚焦環1。靜電吸盤11係以被聚焦環1包圍之方式配置，藉由將被處理物3配置於靜電吸盤11上，而使被處理物3之周圍被聚焦環1包圍。
為了使用電漿處理裝置10對被處理物3進行電漿蝕刻，首先，於已對腔室5內進行真空排氣的狀態下，自氣體供給口6供給蝕刻氣體。此時，對上部電極8及下部電極9施加高頻電壓。形成於上部電極8及下部電極9之間的高頻電場使蝕刻氣體電漿化，從而生成電漿。藉由該 電漿而對被處理物3進行蝕刻。
於如以上所述對被處理物3進行電漿蝕刻期間，聚焦環1亦與被處理物3同樣暴露於電漿中。因此，作為聚焦環1之材料，適宜使用耐腐蝕性優良的本實施形態之多晶CaF2。
以下，通過實施例對本發明進行更具體的說明，但本發明並不限定於以下的實施例。
[試料之製作]
準備中值粒徑為32.7μm的CaF2粉末原料，利用球磨機進行粉碎處理，藉此，調整為中值粒徑為3μm以下的原料。使用該原料，利用上述之注漿法進行成形。即，將使CaF2原料與水混合而製作出之漿料裝入石膏模中，於室溫下靜置48小時以上之後，自石膏模中取出且使其於乾燥爐內在80℃下乾燥48小時，從而製作出成形體。
將所得之成形體於真空中在1250℃下加熱6小時進行燒結。對於燒結後取出之成形體，利用切斷及研削加工而切成試料尺寸為3mm×4mm×5mm的試料。此後，對試料之雙面進行鏡面研磨，而使接合面之表面粗糙度Ra為0.16~1.64μm。
(實施例1~8、比較例1~4)
將試料導入真空爐中，於使接合面接觸的狀態施加負載，將爐內環境設為10MPa以下。此後，藉由以6小時升溫至所需的溫度，且保持於目標溫度，而對試料進行壓接。將該目標溫度稱作保持溫度。保持溫度下之保持係進行6小時，此後，進行冷卻後取出試料。於保持溫度、加壓力、及試料之面粗糙度Ra不同之各種條件下，確認試料是否壓接。
保持溫度之下限為500℃。若保持溫度超過800℃則試料容易壓接。而且，若超過1400℃則試料會溶解，因此若將保持溫度設為1400℃以下但超過1250℃，則會影響試料之素材所具有的物性，因此保持溫度較佳為不超過1250℃。因此，將壓接試料時之保持溫度設為800℃~1200℃。
試料上所施加之加壓力越高則試料越容易壓接。然而，當加壓力過高時，試料容易破碎，並且製造裝置之成本變高，因此較佳為加壓力較低。因此，壓接試料時之加壓力係設為0.9~1.8MPa。
表1中表示面粗糙度Ra、保持溫度、加壓力不同之實施例1~8、比較例1~4的壓接結果。如表1所示，實施例1~3係表示保持溫度為1200℃、加壓力為1.8MPa，而試料的面粗糙度Ra不同的情況下的壓接結果。實施例4~6係表示保持溫度為1200℃、加壓力為0.9MPa，而試料之面粗糙度Ra不同的情況下的壓接結果。實施例7、8及比較例1係表示保持溫度為1000℃、加壓力為0.9MPa，而試料之面粗糙度Ra不同的情況下的壓接結果。比較例2~4係表示保持溫度為800℃、加壓力為0.9MPa，而試料之表面粗糙度Ra不同的情況下的壓接結果。表1中，○表示試料已壓接，×表示試料未壓接。即，表示實施例1~8之試料已壓接，而比較例1~4未壓接。
[表1]
Figure TWI612186BD00001
實施例4、7及比較例2中，各個試料之面粗糙度Ra為0.16μm、0.19μm、0.17μm，視為實質性相等的面粗糙度Ra。此時，如表1所示，於比較例2之試料、即保持溫度設為800℃的情況下，試料未壓接。結果可知，可以說保持溫度理想的是1000℃以上。
實施例7、8及比較例1中，於保持溫度為1000℃、加壓力為0.9MPa的條件下進行壓接處理時，表面粗糙度Ra為1.67μm之比較例1中的試料未壓接。結果可知，為了進行壓接處理，面粗糙度Ra越低越好。於保持溫度為1000℃以上之實施例1~8中，面粗糙度Ra最低的試料為實施例6中之試料，其面粗糙度Ra為1.0μm。因此，為了壓接試料，接合面 之面粗糙度Ra理想的是1.0μm以下。
根據上述實施例1~8、比較例1~4之結果可知，於將局部構件2壓接而製造聚焦環1時，較佳為，將保持溫度設為1000℃以上，將局部構件2之接合面21之面粗糙度Ra設為1.0μm以下。
使用由多晶CaF2構成之複數局部構件2，根據表1所示之結果，可將局部構件2之接合面21彼此通過壓接而接合從而製造聚焦環1。結果，能不使用接著劑或帶構件等會成為被處理物3之污染源的材料而製造聚焦環1。
以電漿處理裝置用之聚焦環為代表的耐電漿構件具有伴隨矽晶圓之大口徑化而大型化的傾向。於利用CaF2製造大型聚焦環的情況下，為了形成為環狀而需要將已燒結之材料的中心部抽出，故而存在材料良率或製造良率降低、成本增大的問題。對此，藉由將複數局部構件2接合，能防止材料良率或製造良率下降，抑制成本之增加，使聚焦環1大型化。
進而，局部構件2係由相對密度為94.0%以上、結晶粒子之平均粒徑設為200μm以上的多晶CaF2構成。因此，藉由將該等局部構件2接合，可提供加工性及耐腐蝕性優良的聚焦環1。
只要不損及本發明之特徵，則本發明並不限定於上述實施形態，於本發明之技術思想範圍內所思及的其他形態亦屬於本發明之範圍內。
1‧‧‧聚焦環
2‧‧‧局部構件
21‧‧‧接合面
22‧‧‧階差部
100‧‧‧聚焦環
200‧‧‧局部構件
201‧‧‧接合面
202‧‧‧接合面
300‧‧‧局部構件
301‧‧‧接合面
302‧‧‧接合面
303‧‧‧未接合局部構件200的面
L1‧‧‧寬度
L2‧‧‧寬度

Claims (9)

  1. 一種多晶CaF2構件，係由組合體構成，該組合體係將由CaF2構成之複數多晶體壓接而成，該多晶體之結晶粒子的平均粒徑為200μm以上。
  2. 如申請專利範圍第1項之多晶CaF2構件，其中，該多晶體之相對密度為94.0%以上。
  3. 一種電漿處理裝置用構件，係由申請專利範圍第1或2項之多晶CaF2構件構成。
  4. 如申請專利範圍第3項之電漿處理裝置用構件，其係聚焦環。
  5. 一種電漿處理裝置，具備申請專利範圍第3或4項之電漿處理裝置用構件。
  6. 一種聚焦環之製造方法，具有如下步驟：準備由多晶CaF2構成之複數局部構件；及將該複數局部構件彼此壓接，形成一個多晶CaF2構件，其中多晶體之結晶粒子的平均粒徑為200μm以上。
  7. 如申請專利範圍第6項之聚焦環之製造方法，其中，將該複數局部構件彼此壓接時的保持溫度為1000度以上1200度以下。
  8. 如申請專利範圍第7項之聚焦環之製造方法，其中，將該複數局部構件彼此壓接時之加壓力為0.9MPa以上1.8MPa以下。
  9. 如申請專利範圍第8項之聚焦環之製造方法，其中，該複數局部構件之各者具有於該壓接時與其他局部構件接合的接合面，該接合面之面粗糙度為1.0μm以下。
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