JP6146413B2 - 組み合わせ体、プラズマ処理装置用部材、プラズマ処理装置およびフォーカスリングの製造方法 - Google Patents
組み合わせ体、プラズマ処理装置用部材、プラズマ処理装置およびフォーカスリングの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000012545 processing Methods 0.000 title claims description 21
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 53
- 239000002245 particle Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 24
- 230000003746 surface roughness Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 2
- 238000005304 joining Methods 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000002788 crimping Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 238000009694 cold isostatic pressing Methods 0.000 description 4
- 229910052602 gypsum Inorganic materials 0.000 description 4
- 239000010440 gypsum Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Description
本発明の第2の態様によると、第1の態様の組み合わせ体において、部分部材の相対密度が94.0%以上であることが好ましい。
本発明の第3の態様によると、プラズマ処理装置用部材は、第1または2の組み合わせ体からなる。
本発明の第4の態様によると、第3の態様のプラズマ処理装置用部材はフォーカスリングである。
本発明の第5の態様によると、プラズマ処理装置は、第3または4の態様のプラズマ処理装置用部材を備える。
本発明の第6の態様によると、フォーカスリングの製造方法は、多結晶CaF2からなり、結晶粒子の平均粒子径が200μm以上である複数の部分部材を用意することと、複数の部分部材同士を圧着し、一つの多結晶CaF2部材を形成することとを有する。
本発明の第7の態様によると、第6の態様のフォーカスリングの製造方法において、複数の部分部材同士を圧着する際の保持温度は、1000度以上1200度以下であることが好ましい。
本発明の第8の態様によると、第7の態様のフォーカスリングの製造方法において、複数の部分部材同士を圧着する際の加圧力は、0.9Mpa以上1.8Mpa以下であることが好ましい。
本発明の第9の態様によると、第8の態様のフォーカスリングの製造方法において、複数の部分部材のそれぞれは、圧着の際に他の部分部材と接合する接合面を有し、接合面の面粗さは1.0μm以下であることが好ましい。
CaF2の粉末原料の粒径(メジアン径)は、好ましくは3μm以下であり、より好ましくは0.5μm以下である。CaF2の粉末原料の粒径が大きい場合には、ボールミル等により予め粉砕してから用いるのが好ましい。
[試料の作製]
メジアン径が32.7μmのCaF2粉末原料を準備し、ボールミルにて粉砕処理することにより、メジアン径が3μm以下の原料を調整した。この原料を用いて、上述した鋳込み法を用いて成形を行った。すなわち、CaF2原料を水と混合して作製したスラリーを石膏型に入れ、室温にて48時間以上静置させた後、石膏型から取り出して乾燥炉内で80℃にて48時間乾燥させて成形体を作製した。
試料は真空炉に導入されて、接合面を接触させた状態で荷重を加え、炉内雰囲気を10MPa以下とした。その後、6時間かけて所望の温度まで昇温を行い、目的温度で保持することにより試料の圧着を行った。この目的温度を保持温度と呼ぶ。保持温度での保持は6時間行い、その後、冷却して試料を取り出した。保持温度と、加圧力と、試料の面粗さRaとを異ならせた種々の条件下において、試料が圧着するか否かを確認した。
日本国特許出願2012年第151367号(2012年7月5日出願)
10…プラズマ処理装置
Claims (9)
- 複数の部分部材を圧着して構成された組み合わせ体であって、
前記部分部材は、CaF 2 原料粉末が成形、焼結された多結晶体からなり、前記部分部材の結晶粒子の平均粒子径が200μm以上である組み合わせ体。 - 請求項1に記載の組み合わせ体において、
前記部分部材の相対密度が94.0%以上である組み合わせ体。 - 請求項1または2に記載の組み合わせ体からなるプラズマ処理装置用部材。
- 請求項3に記載のプラズマ処理装置用部材はフォーカスリングであるプラズマ処理装置用部材。
- 請求項3または4に記載のプラズマ処理装置用部材を備えるプラズマ処理装置。
- 多結晶CaF2からなり、結晶粒子の平均粒子径が200μm以上である複数の部分部材を用意することと、
前記複数の部分部材同士を圧着し、一つの多結晶CaF2部材を形成することとを有するフォーカスリングの製造方法。 - 請求項6に記載のフォーカスリングの製造方法において、
前記複数の部分部材同士を圧着する際の保持温度は、1000度以上1200度以下であるフォーカスリングの製造方法。 - 請求項7に記載のフォーカスリングの製造方法において、
前記複数の部分部材同士を圧着する際の加圧力は、0.9Mpa以上1.8Mpa以下であるフォーカスリングの製造方法。 - 請求項8に記載のフォーカスリングの製造方法において、
前記複数の部分部材のそれぞれは、前記圧着の際に他の部分部材と接合する接合面を有し、前記接合面の面粗さは1.0μm以下であるフォーカスリングの製造方法。
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