JP5887391B1 - スパッタリングターゲット用ターゲット材の製造方法および爪部材 - Google Patents
スパッタリングターゲット用ターゲット材の製造方法および爪部材 Download PDFInfo
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- 210000000078 claw Anatomy 0.000 title claims abstract description 73
- 239000013077 target material Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000005477 sputtering target Methods 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 109
- 230000002093 peripheral effect Effects 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 14
- 229920001875 Ebonite Polymers 0.000 claims description 14
- 238000005452 bending Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 2
- 238000005336 cracking Methods 0.000 abstract description 7
- 230000000052 comparative effect Effects 0.000 description 19
- 239000011162 core material Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 238000000227 grinding Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000008187 granular material Substances 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 229920001084 poly(chloroprene) Polymers 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920006311 Urethane elastomer Polymers 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920005646 polycarboxylate Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
Abstract
Description
BET(Brunauer−Emmett−Teller)法により測定された比表面積(BET比表面積)が5m2/gのSnO2粉末10質量%と、BET比表面積が5m2/gのIn2O3粉末90質量%とを配合し、ポット中でジルコニアボールによりボールミル混合して、原料粉末を調製した。
BET比表面積が4m2/gのZnO粉末25.9質量%と、BET比表面積が7m2/gのIn2O3粉末44.2質量%と、BET比表面積が10m2/gのGa2O3粉末29.9質量%とを配合し、ポット中でジルコニアボールによりボールミル混合して、原料粉末を調製した。
BET比表面積が4m2/gのZnO粉末97質量%と、BET比表面積が5m2/gのAl2O3粉末3質量%とを配合し、ポット中でジルコニアボールによりボールミル混合して原料粉末を調製した。
外径150mmの円柱状の中子(心棒)を有する内径220mm(肉厚10mm)、長さ800mmの円筒形状のウレタンゴム型を使用したことを除き、実施例1と同様の方法により焼成体1を作製した。
実施例4のウレタンゴム型を使用したことを除き、実施例2と同様の方法により焼成体1を作製した。その後、この焼成体1を、実施例4と同様にして外径を153.2mmに加工した。
実施例4のウレタンゴム型を使用したことを除き、実施例3と同様の方法により焼成体1を作製した。その後、この焼成体1を、実施例4と同様にして外径を153.2mmに加工した。
実施例1と同様に作製した焼成体1の中空部7に、支持体2に設けられた長さ180mmの爪部材2aを100mm挿入させた。その後、実施例1と同様にして焼成体1の外径を153.2mmに加工した。
硬質ゴム2a12でコーティングされずに芯材2a11を露出させた支持爪2a1,2a2,2a3を備える爪部材2aを使用したことを除き、実施例1と同様にして焼成体1の外径を153.2mmに加工した。
実施例2と同様に作製した焼成体1を使用したことを除き、比較例1と同様にして外径を153.2mmに加工した。
実施例3と同様に作製した焼成体1を使用したことを除き、比較例1と同様にして外径を153.2mmに加工した。
実施例1と同様に作製した焼成体1の中空部7に、支持体2に設けられた長さ80mmの爪部材2aを50mm挿入させた。爪部材2aは、3本の支持爪2a1,2a2,2a3を有する。支持爪2a1は、直径10mm、長さ80mmのステンレス製の芯材2a11の外周を、厚さ5mmの、硬質ゴム2a12である硬度90のクロロプレンゴムでコーティングしたものであり、支持爪2a2,2a3は、支持爪2a1と同様の構成を有している。
実施例2と同様に作製した焼成体1を使用したことを除き、比較例4と同様にして外径を153.2mmに加工した。
実施例3と同様に作製した焼成体1を使用したことを除き、比較例4と同様にして外径を153.2mmに加工した。
実施例4と同様に作製した焼成体1を使用したことを除き、比較例4と同様にして外径を153.2mmに加工した。
実施例5と同様に作製した焼成体1を使用したことを除き、比較例4と同様にして外径を153.2mmに加工した。
実施例6と同様に作製した焼成体1を使用したことを除き、比較例4と同様にして外径を153.2mmに加工した。
実施例1と同様に作製した焼成体1の中空部7に、支持体2に設けられた長さ130mmの爪部材2aを95mm挿入させた。爪部材2aは、3本の支持爪2a1,2a2,2a3を有する。支持爪2a1は、直径10mm、長さ130mmのステンレス製の芯材2a11の外周を、厚さ5mmの、硬質ゴム2a12である硬度90のクロロプレンゴムでコーティングしたものであり、支持爪2a2,2a3は、支持爪2a1と同様の構成を有している。
2 支持体
2a 爪部材
2a1,2a2,2a3 支持爪
3 砥石
4 振動防止治具
5 内周面
6 外周面
7 中空部
Claims (7)
- 全長が500mm以上の筒状セラミックスの中空部に、3以上の、硬質ゴムでコーティングされている支持爪を前記筒状セラミックスの全長の10%以上の長さまで挿入する工程と、
3以上の前記支持爪を前記筒状セラミックスの内周面にそれぞれ当接させて、前記筒状セラミックスを支持する工程と、
3以上の前記支持爪で支持された前記筒状セラミックスを前記筒状セラミックスの周方向に回転させて前記筒状セラミックスの外周面を加工する工程と
を含む、スパッタリングターゲット用ターゲット材の製造方法。 - 前記筒状セラミックスが、密度5.0g/cm3以上かつ抗折強度250MPa以下である、請求項1に記載のスパッタリングターゲット用ターゲット材の製造方法。
- 3以上の前記支持爪が、前記筒状セラミックスの径方向に独立して移動可能に設けられてなる、請求項1または2に記載のスパッタリングターゲット用ターゲット材の製造方法。
- 前記筒状セラミックスの周方向への回転速度が、10rpm以上150rpm以下である、請求項1〜3のいずれか1つに記載のスパッタリングターゲット用ターゲット材の製造方法。
- 前記筒状セラミックスの材質が、ITO、IGZOまたはAZOである、請求項1〜4のいずれか1つに記載のスパッタリングターゲット用ターゲット材の製造方法。
- 全長が500mm以上の筒状セラミックスを、前記筒状セラミックスの周方向に回転可能に支持する3以上の、硬質ゴムでコーティングされている支持爪を備え、
3以上の前記支持爪が、前記筒状セラミックスの全長の10%以上の長さまで前記筒状セラミックスの内周面にそれぞれ当接される、爪部材。 - 3以上の前記支持爪が、前記筒状セラミックスの径方向に独立して移動可能に設けられてなる、請求項6に記載の爪部材。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014169807A JP5887391B1 (ja) | 2014-08-22 | 2014-08-22 | スパッタリングターゲット用ターゲット材の製造方法および爪部材 |
KR1020167016638A KR20160082255A (ko) | 2014-08-22 | 2015-05-20 | 스퍼터링 타겟용 타겟재의 제조 방법 및 클로 부재 |
PCT/JP2015/064530 WO2016027534A1 (ja) | 2014-08-22 | 2015-05-20 | スパッタリングターゲット用ターゲット材の製造方法および爪部材 |
CN201580004891.0A CN105917022A (zh) | 2014-08-22 | 2015-05-20 | 溅射靶用靶材的制造方法以及爪部件 |
TW104121277A TWI573890B (zh) | 2014-08-22 | 2015-07-01 | 濺鍍靶用靶材之製造方法及爪構件 |
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CN107236934A (zh) * | 2016-03-28 | 2017-10-10 | Jx金属株式会社 | 圆筒型溅射靶及其制造方法 |
JP2017197425A (ja) * | 2016-03-28 | 2017-11-02 | Jx金属株式会社 | 円筒型スパッタリングターゲット及びその製造方法 |
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WO2022075119A1 (ja) | 2020-10-05 | 2022-04-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
CN113635214A (zh) * | 2021-07-26 | 2021-11-12 | 先导薄膜材料(广东)有限公司 | 一种溅射靶材研磨装置及加工方法 |
CN114394818B (zh) * | 2022-02-10 | 2022-10-18 | 江苏东玖光电科技有限公司 | 一种大长径比ito管状靶材的制备方法及制作模具 |
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JPS6316935A (ja) * | 1986-07-04 | 1988-01-23 | Toshiba Corp | セラミツクス加工用チヤツク |
JP4961672B2 (ja) * | 2004-03-05 | 2012-06-27 | 東ソー株式会社 | 円筒形スパッタリングターゲット並びにセラミックス焼結体及びその製造方法 |
DE102005014108A1 (de) * | 2005-03-22 | 2006-09-28 | Schott Ag | Schleifverfahren und Schleifmaschine |
US20070074969A1 (en) * | 2005-10-03 | 2007-04-05 | Simpson Wayne R | Very long cylindrical sputtering target and method for manufacturing |
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JP5750060B2 (ja) * | 2012-01-18 | 2015-07-15 | 三井金属鉱業株式会社 | セラミックス円筒形スパッタリングターゲット材およびその製造方法 |
KR20160085907A (ko) * | 2012-08-22 | 2016-07-18 | 제이엑스금속주식회사 | 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법 |
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CN203751797U (zh) * | 2014-03-25 | 2014-08-06 | 四川精瑞硬质合金科技发展有限公司 | 一种用于车削长轴类圆筒状工件的夹具 |
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CN107236934A (zh) * | 2016-03-28 | 2017-10-10 | Jx金属株式会社 | 圆筒型溅射靶及其制造方法 |
JP2017197425A (ja) * | 2016-03-28 | 2017-11-02 | Jx金属株式会社 | 円筒型スパッタリングターゲット及びその製造方法 |
JP2018009251A (ja) * | 2016-03-28 | 2018-01-18 | Jx金属株式会社 | 円筒型スパッタリングターゲット及びその製造方法 |
KR20180053619A (ko) * | 2016-03-28 | 2018-05-23 | 제이엑스금속주식회사 | 원통형 스퍼터링 타겟 및 그 제조 방법 |
JP7244989B2 (ja) | 2016-03-28 | 2023-03-23 | Jx金属株式会社 | 円筒型スパッタリングターゲット及びその製造方法 |
KR102524402B1 (ko) * | 2016-03-28 | 2023-04-21 | 제이엑스금속주식회사 | 원통형 스퍼터링 타겟 및 그 제조 방법 |
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TW201610199A (zh) | 2016-03-16 |
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JP2016044333A (ja) | 2016-04-04 |
KR20160082255A (ko) | 2016-07-08 |
CN105917022A (zh) | 2016-08-31 |
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