US20020016022A1 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
US20020016022A1
US20020016022A1 US09/886,035 US88603501A US2002016022A1 US 20020016022 A1 US20020016022 A1 US 20020016022A1 US 88603501 A US88603501 A US 88603501A US 2002016022 A1 US2002016022 A1 US 2002016022A1
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United States
Prior art keywords
bump
semiconductor device
substrate
wiring pattern
semiconductor chip
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Abandoned
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US09/886,035
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English (en)
Inventor
Susumu Shintani
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Sharp Corp
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Individual
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Assigned to SHARP KABUSHIKI KAISHA reassignment SHARP KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHINTANI, SUSUMU
Publication of US20020016022A1 publication Critical patent/US20020016022A1/en
Priority to US10/293,441 priority Critical patent/US6887738B2/en
Abandoned legal-status Critical Current

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    • H01L23/49838—Geometry or layout
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Definitions

  • the present invention relates to a semiconductor device and a manufacturing method thereof in which a bare semiconductor chip is flip chip mounted using a printed wiring substrate, and more particularly concerns those using FCB (Flip Chip Bonding).
  • FCB Flip Chip Bonding
  • a flip chip mounting method is a method in which a bare chip is directly mounted on a substrate, instead of using a packaged IC (Integrated Circuit).
  • a bump on a chip and a metal pattern (also referred to as a “land”) on a substrate are connected by pressing the protruding or hemispherical bump against the flat metal pattern from a side opposite to the bump-formed side of the chip.
  • a gold bump 73 is formed on an input/output pad 72 on a bare chip 71 by means of wire bonding or gold plating.
  • the bare chip 71 on which the gold bump 73 is formed is faced down and mounted on a printed wiring substrate 74 .
  • thermo-setting resin 76 is placed on a printed substrate pad 75 patterned on the printed wiring substrate 74 , and the bare chip 71 is placed on the printed substrate pad 75 , with its surface having the gold bump 73 facing down. Then, heat and pressure are applied from above to the bare chip 71 , hardening the thermo-setting resin 76 between the bare chip 71 and the printed wiring substrate 74 .
  • the printed wiring substrate 74 , the thermo-setting resin 6 , and the printed substrate pad 75 are connected by the pressure when they are pressed by the bare chip 71 having the gold bump 73 , and specifically, in a condition that the printed substrate pad 75 is dented, for example, by a dent depth d.
  • the area of the gold bump 73 in contact with the printed substrate pad 75 is always smaller than the area of the printed substrate pad 75 . That is, in a conventional semiconductor device, the connection is obtained by pressing a small, protruding bump against a large, flat metal pattern.
  • a chip and a substrate may be pressed with heat applied, after a resin is filled in a spacing formed between them, or after a thermo-setting resin film, instead of a resin, is placed between them.
  • a resin is filled in a spacing formed between them
  • a thermo-setting resin film instead of a resin
  • thermo-setting resin 76 since the thermal expansion coefficient of the thermo-setting resin 76 is large, due to its shrinkage during cooling, the positional relationship between the gold bump 73 and the printed substrate pad 75 relatively deviates both in a vertical direction along the thickness of the chip, and in a horizontal direction along the surface of the chip. As heat application is completed and the chip is cooled down, the thermo-setting resin 76 and the printed substrate pad 75 shrink and the foregoing positional relationship is tried to be restored, but the original positional relationship is not always restored.
  • the present invention is made considering the foregoing conventional problems, and its object is to provide a semiconductor device having a secure electrical connection between a bump and a wiring pattern and a manufacturing method thereof.
  • a semiconductor device of the present invention is a flip chip mounted semiconductor device including:
  • the wiring pattern having a stepped section formed within an area joined to the bump
  • the bump also joins a side face of the stepped section of the wiring pattern.
  • a flip chip mounted semiconductor device of the present invention includes:
  • a contact area between the bump and the wiring pattern is smaller than an area of the bump in a direction of the substrate.
  • the bump is joined to both the wiring pattern and the substrate so as to cover the metal pattern.
  • the bump is restrained from moving in the horizontal direction by the side face of the wiring pattern. Therefore, a secure electrical connection between the bump and the wiring pattern can be obtained.
  • a method for manufacturing a semiconductor device of the present invention includes the step of conducting flip chip mounting by pressing a semiconductor chip having a bump onto a wiring pattern formed on a substrate,
  • the method for manufacturing a semiconductor device further includes the steps of:
  • FIG. 1 which shows one embodiment of a semiconductor device and a manufacturing method thereof in accordance with the present invention, is a cross-sectional view of the semiconductor device.
  • FIGS. 2 ( a ) and 2 ( b ) are plan views showing the positional relationship of a gold bump and a printed substrate pad of the foregoing semiconductor device.
  • FIG. 2( a ) shows a case in which the printed substrate pad, having a penetration hole, is formed in a circular shape
  • FIG. 2( b ) shows a case in which the printed substrate pad, having penetrating grooves, is formed in a square shape.
  • FIGS. 3 ( a ) through 3 ( c ) show a second embodiment of the semiconductor device and a manufacturing method thereof in accordance with the present invention.
  • FIG. 3( a ) is a cross-sectional view of a semiconductor device of the second embodiment
  • FIG. 3( b ) is a plan view showing the positional relationship between a gold bump and a printed substrate pad which does not have a penetration hole
  • FIG. 3( c ) is a plan view showing the positional relationship between a gold bump and a printed substrate pad which has a penetration hole.
  • FIG. 4 is a plan view showing the positional relationship between the gold bump and another type of printed substrate pad in the foregoing semiconductor device and manufacturing method thereof.
  • FIGS. 5 ( a ) and 5 ( b ) show another type of the second embodiment of the semiconductor device and the manufacturing method thereof in accordance with the present invention.
  • FIG. 5( a ) is a cross-sectional view of a semiconductor device including the section taken along a line X-X in FIG. 5( b )
  • FIG. 5( b ) is a plan view showing the positional relationship of the gold bump and another type of printed substrate pads.
  • FIG. 6 which shows a third embodiment of the semiconductor device and a manufacturing method thereof in accordance with the present invention, is a cross-sectional view showing a semiconductor device having through holes.
  • FIG. 7 which shows another type of a third embodiment of the semiconductor device and a manufacturing method thereof in accordance with the present invention, is a cross-sectional of a semiconductor device having via holes.
  • FIG. 8 is a cross-sectional view showing a semiconductor device in a state under experiment, when the experiment is conducted using the semiconductor device shown in 3 ( a ) and 3 ( b ).
  • FIG. 9 is a cross-sectional view showing a semiconductor device in another state under experiment, when the experiment is conducted using the semiconductor device shown in FIGS. 3 ( a ) and 3 ( b ).
  • FIGS. 10 ( a ) and 10 ( b ) show a conventional semiconductor device, and FIG. 10( a ) is a cross-sectional view, and FIG. 10( b ) is a plan view showing the positional relationship between a gold bump and a printed substrate pad.
  • FIGS. 1 , 2 ( a ), and 2 ( b ) the following description will discuss one embodiment of the present invention.
  • a semiconductor chip 1 having electrodes 2 , and a printed wiring substrate (substrate) 4 having printed substrate pads (wiring pattern, metal pattern) 5 are flip chip mounted by gold bumps (bumps) 3 lying between each of the electrodes 2 and printed substrate pads 5 .
  • the semiconductor chip 1 and the printed wiring substrate 4 are fixed with a thermo-setting resin 6 (resin).
  • each electrode 2 is formed on the semiconductor chip 1 .
  • the gold bump 3 is formed on each electrode 2 .
  • the gold bump 3 is formed in a protruding or hemispherical shape by means of wire bonding or metal plating.
  • the gold bump 3 is made of gold, a material softer than that of the printed substrate pad 5 which will be mentioned later.
  • the material of the bump is not limited to gold, but may be other materials softer than that of the printed substrate pad 5 , such as solder, for example.
  • thermo-setting resin 6 is placed on the printed substrate pad 5 patterned on the printed wiring substrate 4 , and the semiconductor chip 1 is placed on the printed wiring substrate 4 with its surface having the gold bump 73 facing down. Then, heat and pressure are applied from above to the semiconductor chip 1 , hardening the thermo-setting resin 6 between the semiconductor chip 1 and the printed wiring substrate 4 .
  • the semiconductor chip 1 is flip chip mounted on the printed wiring substrate 4 .
  • thermo-setting resin 6 is used between the semiconductor chip 1 and the printed wiring substrate 4 to ensure the strength between the semiconductor chip 1 and the printed wiring substrate 4 , since the strength cannot be mechanically maintained just by the connection of the gold bump 3 and the printed substrate pad 5 .
  • the pressure condition in the foregoing flip chip mounting is 10 to 150 grams per bump, for example. However, the pressure of not less than 75 grams is desirable, according to the results of experiments.
  • thermo-setting resin 6 As for the condition of the temperature applied to the thermo-setting resin 6 , it is preferable to apply 190° C. for 5 to 10 seconds, for example, although it varies according to the type of the resin used.
  • thermo-setting resin film for example, as the foregoing thermo-setting resin 6 .
  • thermo-setting resin film it is preferable to use an anisotropic conductive adhesive, that is, a resin in the form of an anisotropic conductive film [hereinafter referred to as an ACF (Anisotropic Conductive Film)].
  • This ACF is the resin containing conductive particles. Therefore, by placing the ACF between the bump 3 and the printed substrate pad 5 and applying pressure, electrical connection is ensured via conductive particles in the direction the bump 3 and the printed substrate pad 5 are pressed, and insulation between each printed substrate pad 5 is maintained by the resin in a horizontal direction of the printed substrate pad 5 .
  • the ACF by using the ACF, problems caused by thermal expansion can be suppressed to some extent, compared with the case in which a normal resin without having conductive particles is used.
  • the ACF is more effective than normal resins without having conductive particles on the problems related to thermal expansion, as it contains conductive particles.
  • a penetration hole 7 is formed in the printed substrate pad 5 on the printed wiring substrate 4 , on a surface in contact with the each gold bump 3 (by forming the penetration hole 7 , the printed substrate pad 5 comes to have an inner surface, which becomes a stepped section). That is, the penetration hole 7 is formed on a surface where the gold bump 3 and the printed substrate pad 5 contact horizontally, as a hole penetrating the printed substrate pad 5 .
  • the gold bump 3 gets into the penetration hole 7 as it is made of gold and is softer than the printed substrate pad 5 .
  • the gold bump 3 is joined to at least a side face 7 a of the penetration hole 7 .
  • the gold bump 3 is pressed into the penetration hole 7 , which is a stepped section, of the printed substrate pad 5 and deformed, providing secure connection between them.
  • thermo-setting resin 6 When heat is applied again to the thermo-setting resin 6 hardened between the printed wiring substrate 4 and the semiconductor chip 1 , the thermo-setting resin 6 is expanded by heat, the distance between the semiconductor chip 1 and the printed wiring substrate 4 is widened according to the thermal expansion coefficient of the thermo-setting resin 6 , and the gold bump 3 and the printed substrate pad 5 get separated.
  • heat application is normally conducted at 190° C. for 10 seconds or less, for example, as mentioned above, but sometimes the temperature is increased up to 280° C., and the thermo-setting resin 6 is expanded in such a case.
  • the printed wiring substrate 4 is also expanded by heat.
  • the expansion of the semiconductor chip 1 is negligible.
  • the difference in linear expansion coefficients is 100 times or more.
  • the positional relationship between the gold bump 3 and the printed substrate pad 5 is relatively deviated both in a facing direction (the direction of thickness of the chip) and in a horizontal direction (the direction along the surface of the chip).
  • a facing direction the direction of thickness of the chip
  • a horizontal direction the direction along the surface of the chip
  • the penetration hole 7 is formed in the printed substrate pad 5 , and the gold bump 3 gets into the penetration hole 7 .
  • the gold bump 3 is restrained from moving by the penetration hole 7 in a horizontal direction of the printed substrate pad 5 and thus it does not move horizontally. Consequently, when the temperature is lowered in this state, even if the thermo-setting resin 6 is influenced by the pressure stress between the printed wiring substrate 4 and the semiconductor chip 1 , the gold bump 3 in the penetration hole 7 and the thermo-setting resin 6 get hardened at the original spot, so the gold bump 3 can maintain the position originally mounted on the printed substrate pad 5 .
  • the gold bump 3 is connected to the printed substrate pad 5 in such a manner that it is joined to an end section of the penetration hole 7 of the printed substrate pad 5 . More precisely, the gold bump 3 is also considered to be joined to the side face 7 a of the penetration hole 7 . By the effect of the side face junction, the semiconductor chip 1 is considered to be restrained from moving.
  • the stepped section is formed as the penetration hole 7 , and the gold bump 3 gets into the printed substrate pad 5 and contacts the printed wiring substrate 4 , but the embodiment is not limited to this structure.
  • the stepped section may not be the penetration hole 7 but may be formed as a hole not penetrating but with a step. That is, the stepped section may take a form as far as the gold bump 3 gets into the printed substrate pad 5 and the gold bump 3 is at least joined to the side face of the hole. Also with this structure, the original junction position of the gold bump 3 and the printed substrate pad 5 is maintained when the temperature is returned to the normal temperature after the second heat application.
  • the side face of the foregoing stepped section is formed in parallel (or virtually parallel) to the facing direction of the semiconductor chip 1 and printed wiring substrate 4 .
  • this structure it becomes possible to effectively restrain the semiconductor chip 1 from moving in a horizontal direction (the direction vertical to the facing direction of the semiconductor chip 1 and printed wiring substrate 4 ).
  • the gold bump 3 is formed in a virtually circular shape, and the diameter of the gold bump 3 is formed smaller than the diameter of the printed substrate pad 5 when looking at them from the top. Concerning this point, the present embodiment is different from a second embodiment which will be described later.
  • the wiring of the printed substrate pad 5 is not illustrated but extended from its one end to the end of the printed wiring substrate 4 , along the upper surface of the printed wiring substrate 4 .
  • the printed substrate pad 5 is formed in a virtually circular shape as mentioned above, but the shape is not limited to circular but can be a virtually square, for example, as shown in FIG. 2( b ), and the penetration hole 7 can be formed in a cross shape in this case. That is, the penetration hole 7 is made up of penetrating grooves. Also in this case, the virtually square shape of the printed substrate pad 5 is formed to be larger than the virtually circular shape of the gold bump 3 .
  • the characteristic form of the printed substrate pad 5 enables the gold bump 3 formed on each electrode 2 of the semiconductor chip 1 to get into the printed substrate pad 5 , which is a chip mounting land having the above characteristic pattern form, thus contributing to the maintenance, improvement, and stabilization of the connection reliability after the connection.
  • the semiconductor chip 1 having the electrodes 2 is flip chip mounted on the printed substrate pads 5 on the printed wiring substrate 4 , by the gold bump 3 at each electrode 2 , and the semiconductor chip 1 and the printed wiring substrate 4 are fixed with the thermo-setting resin 6 .
  • the penetration hole 7 is formed in the printed substrate pad 5 within the area joined to each gold bump 3 , and the area joined to each gold bump 3 includes the side face 7 a of the penetration hole 7 in the printed substrate pad 5 .
  • thermo-setting resin 6 gets softened when heat is applied in a process after the flip chip mounting, and a horizontal force is exerted between the gold bump 3 and the printed substrate pad 5 , the gold bump 3 is restrained from moving in the horizontal direction by the side face 7 a of the penetration hole 7 in the printed substrate pad 5 .
  • the semiconductor device 10 having a secure electrical connection between the gold bump 3 and the printed substrate pad 5 and the manufacturing method thereof can be provided.
  • a tip of the printed substrate pad 5 which contacts the gold bump 3 is formed in a semicircular shape with the penetration hole 7 in its center.
  • the tip of the printed substrate pad 5 can fit the gold bump 3 formed in a circular shape.
  • the junction section of the gold bump 3 can be formed on the side face 7 a of the penetration hole 7 in the printed substrate pad 5 .
  • the semiconductor device 10 having a secure electrical connection between the gold bump 3 and the printed substrate pad 5 and the manufacturing method thereof can be provided.
  • thermo-setting resin 6 is used as the thermo-setting resin 6 , and when the semiconductor chip 1 and the printed wiring substrate 4 are fixed using the foregoing ACF, the semiconductor chip 1 having the gold bump 3 on each electrode 2 is pressed onto the printed wiring substrate 4 with heat applied, via the foregoing ACF.
  • thermo-setting resin 6 including the ACF gets softened when heat is applied in a process after the flip chip mounting, and a horizontal force is exerted between the gold bump 3 and the printed substrate pad 5 , the horizontal force exerted between the gold bump 3 and the printed substrate pad 5 can be suppressed.
  • the semiconductor device 10 having a secure electrical connection between the gold bump 3 and the printed substrate pad 5 and the manufacturing method thereof can be provided.
  • FIGS. 3 ( a ) through 3 ( c ), 4 , 5 ( a ), and 5 ( b ) the following description will discuss another embodiment of the present invention.
  • the members having the same structure (function) as those in the above-mentioned first embodiment will be designated by the same reference numerals and their description will be omitted.
  • the size of the gold bump 3 is smaller than that of the printed substrate pad 5 , when looking at them from the top.
  • each gold bump 13 is larger than that of a printed substrate pad 15 , when looking at the printed wiring substrate 4 from the top.
  • the penetration hole 7 adopted in the first embodiment is not formed in the printed substrate pad 15 , and an external side face 15 a of the printed substrate pad 15 has a function as a stepped section.
  • the printed substrate pad 15 has the side face (external surface) 15 a , formed parallel (or virtually parallel) to a facing direction of the semiconductor chip 1 and the printed wiring substrate 4 , in a periphery of its surface joined to the gold bump 13 .
  • this side face 15 a is formed the stepped section which effectively restrains the semiconductor chip 1 from moving in a horizontal direction (a direction perpendicular to the direction in which the semiconductor chip 1 and the printed wiring substrate 4 face one another).
  • the gold bump 13 bites on the printed substrate pad 15 so as to cover the outside of the printed substrate pad 15 , and thus the gold bump 13 is joined to at least the external side face 15 a of the printed substrate pad 15 .
  • the gold bump 13 is restrained from moving by the side face 15 a in a horizontal direction of the printed substrate pad 15 and thus its horizontal movement can be prevented. Therefore, in the cooling process where the gold bump 13 and the printed substrate pad 15 get once separated in the direction they face one another, even if the thermo-setting resin 6 is affected by the pressure stress between the semiconductor chip 1 and the printed wiring substrate 4 , the gold bump 13 can remain in its original position on the printed substrate pad 15 , as its movement in a horizontal direction is restrained by the side face 15 a.
  • the printed substrate pad 15 of the present embodiment is formed smaller than the gold bump 13 .
  • the gold bump 13 softer than the printed substrate pad 15 , easily bites on the protruding printed substrate pad 15 when connecting the gold bump 13 to the printed substrate pad 15 by pressing the gold bum 13 onto the printed substrate pad 15 .
  • the printed substrate pad 15 has a circular tip which is entirely covered with the gold bump 13 , but the present invention is not limited to this structure.
  • a printed substrate pad 16 may be formed in a narrow rectangular shape and its tip may protrude from the gold bump 13 . It is needless to mention that the tip is not necessarily protrude from the gold bump 13 .
  • a printed substrate pad 18 may be shaped like a letter L and only a side face 18 a , one side of the printed substrate pad 18 , may be joined to the gold bump 13 .
  • the printed substrate pad is not limited to L-shaped, but it may take other shapes as far as it is formed in a polygon shape within the area joined to each gold bump 3 , in general.
  • a stepped section can be formed in the printed substrate pad, and a section joined to the gold bump can be provided on the side face of the stepped section.
  • the area of the printed substrate pad 18 , joined to one gold bump 13 is divided into a plurality of pieces, and each of the plurality of pieces has the stepped section (side face 18 a ).
  • the semiconductor device 20 of the present embodiment is arranged such that, when the printed wiring substrate 4 is seen from the side of the semiconductor chip 1 , the area where the gold bump 13 contacts the printed substrate pad 15 is smaller than the entire contact area of the gold bump 13 in the direction of the printed wiring substrate 4 [See FIGS. 3 ( a ) through 3 ( c )].
  • the printed substrate pad is formed larger than the gold bump.
  • the printed substrate pad 15 is formed smaller than the gold bump 13 , contrary to the conventional device.
  • the gold bump 13 is joined to both the printed substrate pad 15 and the printed wiring substrate 4 so as to cover the printed substrate pad 15 . Therefore, the gold bump 13 also joins the side face 15 a of the printed substrate pad 15 .
  • thermo-setting resin 6 gets softened when heat is applied in a process after the flip chip mounting, and a horizontal force is exerted between the gold bump 13 and the printed substrate pad 15 , the gold bump 13 is restrained from moving in a horizontal direction by the side face 15 a of the printed substrate pad 15 .
  • the gold bump 13 is generally made of a softer material than that of the printed substrate pad 15 , the structure that the printed substrate pad 15 is smaller than the gold bump 13 , as in the present embodiment, enables the gold bump 13 to bite on the printed substrate pad 15 more firmly with the pressure in the same level as in a conventional device, providing more satisfactory electrical connection.
  • the semiconductor device 20 having a secure electrical connection between the gold bump 13 and the printed substrate pad 15 can be provided.
  • the semiconductor device 20 of the present embodiment is arranged such that the tip of the printed substrate pad 15 joined to the gold bump 13 is formed in a semicircular shape with the penetration hole 17 in its center.
  • the tip of the printed substrate pad 15 can be covered with the gold bump 13 so as to fit the circular-formed gold bump 13 .
  • the gold bump 13 also joins the side face of the printed substrate pad 15 , that is, the side face of the penetration hole 17 .
  • the semiconductor device 20 having a secure electrical connection between the gold bump 13 and the printed substrate pad 15 can be provided.
  • the semiconductor device 20 of the present embodiment is arranged such that the printed substrate pad 16 which contacts each gold bump 13 can be formed in a rectangular shape crossing the surface in contact with the gold bump 13 .
  • the printed substrate pad 16 crossing the circular-formed gold bump 13 can be covered with the gold bump 13 .
  • the gold bump 13 also joins the side face of the printed substrate pad 16 .
  • the semiconductor device 20 having a secure electrical connection between the gold bump 13 and the printed substrate pad 16 can be provided.
  • the semiconductor device 20 of the present embodiment is arranged such that the printed substrate pad 18 which contacts each gold bump 13 can be formed in a polygon shape within the surface in contact with the gold bump 13 .
  • the printed substrate pad 18 can be covered with the gold bump 13 , within the area of the circular-formed gold bump 13 .
  • the gold bump 13 also joins the side face of the printed substrate pad 18 .
  • the semiconductor device 20 having a secure electrical connection between the gold bump 13 and the printed substrate pad 18 can be provided.
  • the present invention is not limited to the foregoing embodiments, and various alternation can be made within the scope of the present invention.
  • the semiconductor chip 1 having each electrode 2 and the printed wiring substrate 4 having the printed substrate pads 15 are flip chip mounted just by pressure [See FIG. 3 ( a )].
  • ultrasound can be used to join the gold bump 13 to the printed substrate pad 15 , which is so called an ultrasonic welding.
  • the gold bump 13 and the printed substrate pad 15 are fixed using ultrasound in order to further stabilize the connection between them. Specifically, when ultrasonic vibrations are applied to the gold bump 13 together with a constant pressure, a plastic flow is generated in the gold bump 13 , in the same way as in the case under a high temperature. Then the oxide films on the respective metal boundary surfaces of the gold bump 13 and the printed substrate pad 15 are destroyed, and new surfaces are contacted and joined. Thus, a firm junction is ensured.
  • an ultrasonic welding can work more effective if point contact is provided between elements to be welded. Therefore, it is desirable to form the printed substrate pad 15 to be a sharp-pointed projection, in a section where the gold bump 13 and the printed substrate pad 15 contact each other.
  • the printed substrate pad 15 is formed smaller than the gold bump 13 within the area joined to the gold bump 13 . Therefore, since the contact section is structurally smaller than that of a conventional device, the effect of ultrasound that its power is concentrated to a smaller area can be further enhanced in this structure. That is, the gold bump 13 and the printed substrate pad 15 are related in such a manner that the printed substrate pad 15 protrudes into the gold bump 13 , which provides a smaller contact area than in the case of the gold bump 13 and a conventional flat printed substrate pad, allowing an easy ultrasonic welding with low pressure and low power.
  • the reason why the elements are sealed with a resin after the connection of the gold bump 13 is completed is that, if ultrasound is used after the elements are sealed with a resin, it prevents the resin from hardening and it accelerates a deviation of the gold bump 13 and the printed substrate pad 15 in a horizontal direction, thus producing adverse effects.
  • each gold bump 13 on the semiconductor chip 1 and the printed substrate pad 15 on the printed wiring substrate 4 are joined using ultrasonic vibrations, and a spacing formed between the semiconductor chip 1 and the printed wiring substrate 4 is sealed with a resin.
  • the method for manufacturing the semiconductor device 20 having a secure electrical connection between the gold bump 13 and the printed substrate pad 15 can be provided.
  • through holes 31 are formed in the printed wiring substrate 4 , as shown in FIG. 6.
  • the printed wiring substrate 4 shown in the figure is a single-layer substrate, but it may be a multilayer substrate with the through hole 31 penetrating all the layers.
  • the semiconductor device 40 has a so-called built-up multilayer printed wiring substrate comprising the printed wiring substrate 4 and the printed wiring substrate 44 .
  • the foregoing via hole 41 is a hole for a via which connects the wiring of each printed wiring substrate of a multilayer substrate.
  • the difference between the through hole 31 and the via hole 41 is that, while the through hole 31 is a penetrating hole, the via hole 41 penetrates at least only one layer but does not penetrate all the layers of a multilayer wiring substrate.
  • a gold bump 33 or 43 is restrained from moving by a side face 31 a or 41 a of the through hole 31 or the via hole 41 , by pressing the gold bump 33 or 43 into the inside of the through hole 31 or via hole 41 , as shown in the figures.
  • the gold bump 33 or 43 can maintain the position originally mounted on the through hole 31 or the via hole 41 , as its movement is restrained by the side face 31 a or 41 a of the through hole 31 or the via hole 41 .
  • a metal pattern contacting each gold bump 33 is made up of a Land for a through hole of the printed wiring substrate 4 , that is, the through hole 31 (See FIG. 6).
  • a metal pattern contacting each gold bump 43 is made up of a land for a via hole of the printed wiring substrate 4 , that is, the via hole 41 (See FIG. 7).
  • connection pressure of 1.47 N/bump (150 gf/bump) or more is applied to the semiconductor device 20 in which the diameter of the gold bump 13 is 80 ⁇ m and the width of the printed substrate pad 15 is 20 ⁇ m, a wedge-shaped crack 16 , as shown in FIG. 9, for example, occurs between the gold bump 13 and the printed substrate pad 15 in the dented part of the gold bump 13 .
  • the crack 16 is likely to vary according to the sizes of the printed substrate pad 15 and the gold bump 13 , and it has been found that the crack 16 occurs under a pressure of a certain value or more.
  • FIGS. 10 ( a ) and 10 ( b ) are explanatory views of the foregoing conventional device
  • a dent depth formed when the gold bump 73 sank into the printed substrate pad 75 was measured when connection pressures of 0.98 N/bump (100 gh/bump), 1.47 N/bump (150 gh/bump), and 2.94 N/bump (300 gh/bump) were applied respectively from an upper surface of the semiconductor chip 71 , also referred to as the bare chip 71 , in a condition that the temperature was increased to a constant temperature.
  • the semiconductor device of the present invention is arranged such that a semiconductor chip having electrodes is flip chip mounted on a metal pattern formed on a substrate, by a bump, and the semiconductor chip and the substrate are fixed with a resin;
  • the metal pattern has a stepped section formed within an area joined to a corresponding bump
  • the bump also joins a side face of the stepped section of the metal pattern.
  • the stepped section is formed on the metal pattern within the area joined to each bump, and each bump has a junction section also on a side face of the stepped section of the metal pattern.
  • the present invention offers the effect of providing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
  • the semiconductor device of the present invention is arranged such that a semiconductor chip having electrodes is flip chip mounted on a metal pattern on a substrate by each bump, and the semiconductor chip and the substrate are fixed with a resin, and that when the substrate is seen from a side of the semiconductor chip, a contact area between the bump and the metal pattern is smaller than an area of the bump in a direction of the substrate.
  • the foregoing semiconductor device of the present invention can also be defined as a flip chip mounted semiconductor device including: a semiconductor chip having a bump; and a substrate having a wiring pattern (metal pattern or the like) joined to the bump, wherein a projected area resulting from an orthogonal projection of a contact area between the wiring pattern and the bump to the substrate is smaller than a projected area resulting from the orthogonal projection of the bump to the substrate, the orthogonal projection being performed in a direction of the substrate from a side of the semiconductor chip.
  • a flip chip mounted semiconductor device including: a semiconductor chip having a bump; and a substrate having a wiring pattern (metal pattern or the like) joined to the bump, wherein a projected area resulting from an orthogonal projection of a contact area between the wiring pattern and the bump to the substrate is smaller than a projected area resulting from the orthogonal projection of the bump to the substrate, the orthogonal projection being performed in a direction of the substrate from a side of the semiconductor chip.
  • the foregoing semiconductor device of the present invention may be further defined as a flip chip mounted semiconductor device including: a semiconductor chip having a bump; and a substrate having a wiring pattern joined to the bump, wherein a contact area of the wiring pattern where the wiring pattern contacts the bump is smaller than an area of the bump on a side of the substrate.
  • the metal pattern is formed larger than the bump.
  • the contact area between the bump and the metal pattern is smaller than the entire contact area of the bump in a direction of the substrate. That is, the metal pattern is formed smaller than the bump, contrary to the conventional device.
  • the bump is joined to both the metal pattern and the substrate as if it covers the metal pattern.
  • the bump also joins a side face of the metal pattern.
  • the bump is generally made of a material softer than that of the metal pattern
  • the structure that metal pattern is smaller than the bump enables the bump to bite on the metal pattern more firmly with the pressure in the same level as in a conventional device, providing more satisfactory electrical connection.
  • the present invention offers the effect of providing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
  • the semiconductor device of the present invention is arranged such that, in the above-mentioned semiconductor device, the tip of the metal pattern joined to the bump is formed in a semicircular shape with a hole in its center.
  • the tip of the metal pattern can fit the circular-formed bump.
  • the junction section of the bump can be formed on a side face of the metal pattern.
  • the present invention offers an effect of providing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
  • the semiconductor device of the present invention is arranged such that, in the above-mentioned semiconductor device, the metal pattern which contacts each bump is formed in a rectangular shape crossing the surface in contact with the bump.
  • the metal pattern crossing the circular-formed bump can be covered with the bump.
  • the junction section of the bump can be formed on a side face of the metal pattern.
  • the present invention offers an effect of providing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
  • the semiconductor device of the present invention is arranged such that, in the above-mentioned semiconductor device, the metal pattern which contacts each bump is formed in a polygon shape within the area joined to the bump.
  • the metal pattern can be covered with the bump, within the area of the circular-formed bump.
  • the junction section of the bump can be formed on a side face of the metal pattern.
  • the present invention offers an effect of providing a semiconductor de-vice having a secure electrical connection between the bump and the metal pattern.
  • the semiconductor device of the present invention is arranged such that, in the above-mentioned semiconductor device, a metal pattern contacting each bump is made up of a land for a through hole of a substrate.
  • the present invention offers an effect of providing a semiconductor device having a secure electrical connection between the through hole and the bump utilizing a stepped section of the through hole.
  • the semiconductor device of the present invention is arranged such that, in the above-mentioned semiconductor device, a metal pattern contacting each bump is made up of a land for a via hole of a substrate 4 .
  • the present invention offers an effect of providing a semiconductor device having a secure electrical connection between the via hole and the bump utilizing a stepped section of the via hole.
  • a method for manufacturing a semiconductor device of the present invention includes the steps of:
  • the method for manufacturing a semiconductor device further includes the steps of:
  • the present invention offers an effect of providing a method for manufacturing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
  • the method for manufacturing the semiconductor device of the present invention is arranged such that, in the above-mentioned method for manufacturing the semiconductor device, a resin in the form of an anisotropic conductive film is used to fix the semiconductor chip and the substrate, and when fixing, the semiconductor chip having the bump on each electrode is pressed onto the substrate with heat applied, via the foregoing resin in the form of an anisotropic conductive film.
  • the foregoing resin in the form of an anisotropic conductive film is less influenced by thermal expansion than a general resin.
  • the present invention offers an effect of providing a method for manufacturing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
  • the method for manufacturing the semiconductor device of the present invention is arranged such that, in the above-mentioned method for manufacturing the semiconductor device, each bump on the semiconductor chip and the metal pattern on the substrate are joined using ultrasonic vibrations, and a spacing formed between the semiconductor chip and the substrate is sealed with a resin.
  • the present invention offers an effect of providing a method for manufacturing a semiconductor device having a secure electrical connection between the bump and the metal pattern.
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