UA78705C2 - Process and apparatus for obtaining of bulky nitride monocrystal, containing gallium - Google Patents
Process and apparatus for obtaining of bulky nitride monocrystal, containing gallium Download PDFInfo
- Publication number
- UA78705C2 UA78705C2 UA20031212656A UA20031212656A UA78705C2 UA 78705 C2 UA78705 C2 UA 78705C2 UA 20031212656 A UA20031212656 A UA 20031212656A UA 20031212656 A UA20031212656 A UA 20031212656A UA 78705 C2 UA78705 C2 UA 78705C2
- Authority
- UA
- Ukraine
- Prior art keywords
- gallium
- crystallization
- containing nitride
- temperature
- zone
- Prior art date
Links
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 271
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 263
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims abstract description 170
- 239000013078 crystal Substances 0.000 claims abstract description 129
- 239000002904 solvent Substances 0.000 claims abstract description 53
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 36
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 30
- 239000012297 crystallization seed Substances 0.000 claims abstract description 29
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000002425 crystallisation Methods 0.000 claims description 160
- 230000008025 crystallization Effects 0.000 claims description 159
- 238000004090 dissolution Methods 0.000 claims description 136
- 229910002601 GaN Inorganic materials 0.000 claims description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 82
- 239000007858 starting material Substances 0.000 claims description 72
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 64
- 239000000243 solution Substances 0.000 claims description 36
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 34
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 34
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 34
- 229910021529 ammonia Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 31
- -1 gallium azides Chemical class 0.000 claims description 29
- 238000005192 partition Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000001953 recrystallisation Methods 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 15
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 13
- 229910001413 alkali metal ion Inorganic materials 0.000 claims description 13
- 238000000407 epitaxy Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- 239000011591 potassium Substances 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 230000001965 increasing effect Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 7
- 150000003949 imides Chemical class 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 150000001408 amides Chemical group 0.000 claims description 5
- 150000001540 azides Chemical class 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 150000004678 hydrides Chemical class 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 150000002259 gallium compounds Chemical class 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000012047 saturated solution Substances 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 229910001414 potassium ion Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910001415 sodium ion Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 150000004820 halides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000002902 organometallic compounds Chemical group 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZFFBIQMNKOJDJE-UHFFFAOYSA-N 2-bromo-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(Br)C(=O)C1=CC=CC=C1 ZFFBIQMNKOJDJE-UHFFFAOYSA-N 0.000 description 1
- 101000963903 Homo sapiens Modulator of smoothened protein Proteins 0.000 description 1
- 102100040097 Modulator of smoothened protein Human genes 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000102 alkali metal hydride Inorganic materials 0.000 description 1
- 150000008046 alkali metal hydrides Chemical class 0.000 description 1
- 108010038083 amyloid fibril protein AS-SAM Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000010956 selective crystallization Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Golf Clubs (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL347918A PL207400B1 (pl) | 2001-06-06 | 2001-06-06 | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
| PCT/IB2002/004185 WO2002101120A2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA78705C2 true UA78705C2 (en) | 2007-04-25 |
Family
ID=20078910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UA20031212656A UA78705C2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining of bulky nitride monocrystal, containing gallium |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US7374615B2 (ja) |
| EP (1) | EP1405936B1 (ja) |
| JP (2) | JP4113835B2 (ja) |
| KR (2) | KR100853841B1 (ja) |
| CN (2) | CN1282771C (ja) |
| AT (1) | ATE418630T1 (ja) |
| DE (1) | DE60230513D1 (ja) |
| PL (1) | PL207400B1 (ja) |
| UA (1) | UA78705C2 (ja) |
| WO (2) | WO2002101125A1 (ja) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2296189C2 (ru) * | 2001-06-06 | 2007-03-27 | АММОНО Сп.з о.о. | Способ и устройство для получения объемного монокристаллического галлийсодержащего нитрида (варианты) |
| PL207400B1 (pl) * | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
| CN1300901C (zh) * | 2001-10-26 | 2007-02-14 | 波兰商艾蒙诺公司 | 使用氮化物块状单晶层的发光元件结构 |
| TWI231321B (en) * | 2001-10-26 | 2005-04-21 | Ammono Sp Zoo | Substrate for epitaxy |
| WO2003098757A1 (fr) * | 2002-05-17 | 2003-11-27 | Ammono Sp.Zo.O. | Structure d'element electroluminescent comprenant une couche de monocristaux de nitrure en vrac |
| AU2002354463A1 (en) * | 2002-05-17 | 2003-12-02 | Ammono Sp.Zo.O. | Bulk single crystal production facility employing supercritical ammonia |
| US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| WO2004003261A1 (en) | 2002-06-26 | 2004-01-08 | Ammono Sp. Z O.O. | Process for obtaining of bulk monocrystallline gallium-containing nitride |
| PL224993B1 (pl) | 2002-12-11 | 2017-02-28 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| EP1576210B1 (en) * | 2002-12-11 | 2010-02-10 | AMMONO Sp. z o.o. | A substrate for epitaxy and a method of preparing the same |
| KR101284932B1 (ko) * | 2002-12-27 | 2013-07-10 | 제너럴 일렉트릭 캄파니 | 갈륨 나이트라이드 결정, 호모에피택셜 갈륨 나이트라이드계 디바이스 및 이들의 제조 방법 |
| US9279193B2 (en) | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
| US7261775B2 (en) | 2003-01-29 | 2007-08-28 | Ricoh Company, Ltd. | Methods of growing a group III nitride crystal |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| JP4819677B2 (ja) * | 2004-03-31 | 2011-11-24 | パナソニック株式会社 | Ｉｉｉ族元素窒化物結晶の製造方法、それに用いる製造装置、およびそれらにより得られた半導体素子 |
| JP2005298269A (ja) * | 2004-04-12 | 2005-10-27 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス |
| JP5015417B2 (ja) * | 2004-06-09 | 2012-08-29 | 住友電気工業株式会社 | ＧａＮ結晶の製造方法 |
| KR100848380B1 (ko) * | 2004-06-11 | 2008-07-25 | 암모노 에스피. 제트오. 오. | 갈륨 함유 질화물의 벌크 단결정 및 그의 어플리케이션 |
| JP2006044982A (ja) * | 2004-08-04 | 2006-02-16 | Sumitomo Electric Ind Ltd | 窒化物半導体単結晶基板とその合成方法 |
| US20080193363A1 (en) * | 2004-08-20 | 2008-08-14 | Mitsubishi Chemical Corporation | Metal Nitrides and Process for Production Thereof |
| PL371405A1 (pl) | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
| JP4563230B2 (ja) | 2005-03-28 | 2010-10-13 | 昭和電工株式会社 | ＡｌＧａＮ基板の製造方法 |
| WO2007008198A1 (en) | 2005-07-08 | 2007-01-18 | The Regents Of The University Of California | Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave |
| CN1867025B (zh) * | 2005-12-20 | 2010-08-11 | 华为技术有限公司 | 对预付费用户进行计费控制的方法 |
| JP2007277074A (ja) * | 2006-01-10 | 2007-10-25 | Ngk Insulators Ltd | 窒化アルミニウム単結晶の製造方法及び窒化アルミニウム単結晶 |
| JP5454829B2 (ja) * | 2006-03-06 | 2014-03-26 | 三菱化学株式会社 | 超臨界溶媒を用いた結晶製造方法および結晶製造装置 |
| JP4187175B2 (ja) * | 2006-03-13 | 2008-11-26 | 国立大学法人東北大学 | 窒化ガリウム系材料の製造方法 |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| CN100434573C (zh) * | 2006-04-03 | 2008-11-19 | 深圳大学 | 等离子体焰流生长大尺寸氮化铝晶体的方法 |
| US7514809B2 (en) * | 2006-11-16 | 2009-04-07 | General Electric Company | Excitation voltage supply for synchronous generator used in a wind turbine, and method of starting a wind turbine having such excitation voltage supply |
| US8389099B1 (en) | 2007-06-01 | 2013-03-05 | Rubicon Technology, Inc. | Asymmetrical wafer configurations and method for creating the same |
| US20090223440A1 (en) * | 2008-03-04 | 2009-09-10 | Boris Feigelson | Method of growing GaN crystals from solution |
| JP4631946B2 (ja) | 2008-08-11 | 2011-02-16 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体層貼り合わせ基板の製造方法 |
| EP2267197A1 (en) * | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| CN102695823B (zh) | 2009-11-27 | 2015-05-27 | 三菱化学株式会社 | 氮化物结晶的制造方法、制造容器和构件 |
| WO2012016033A1 (en) | 2010-07-28 | 2012-02-02 | Momentive Performance Materials Inc. | Apparatus for processing materials at high temperatures and pressures |
| KR20140016384A (ko) * | 2011-06-23 | 2014-02-07 | 아사히 가세이 가부시키가이샤 | 질화물 단결정의 제조 방법 및 그것에 이용하는 오토클레이브 |
| US8728938B2 (en) * | 2012-06-13 | 2014-05-20 | Ostendo Technologies, Inc. | Method for substrate pretreatment to achieve high-quality III-nitride epitaxy |
| WO2014097931A1 (ja) | 2012-12-17 | 2014-06-26 | 三菱化学株式会社 | 窒化ガリウム基板、および、窒化物半導体結晶の製造方法 |
| TWI793382B (zh) | 2013-08-08 | 2023-02-21 | 日商三菱化學股份有限公司 | 自立ＧａＮ基板、ＧａＮ單結晶之製造方法及半導體裝置之製造方法 |
| KR101517024B1 (ko) * | 2013-10-31 | 2015-05-06 | 한국세라믹기술원 | 단결정 성장용 질화알루미늄 분말의 제조 방법 및 이를 이용하여 제조한 질화알루미늄 단결정 성장용 분말 |
| CN105917035B (zh) | 2014-01-17 | 2019-06-18 | 三菱化学株式会社 | GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法 |
| CN106103816B (zh) * | 2014-03-18 | 2021-02-09 | 赛奥科思有限公司 | 氮化镓晶体的制造方法 |
| WO2016118862A1 (en) * | 2015-01-22 | 2016-07-28 | Sixpoint Materials, Inc. | Seed selection and growth methods for reduced-crack group iii nitride bulk crystals |
| KR101803929B1 (ko) * | 2016-03-10 | 2018-01-11 | 주식회사 소프트에피 | 근자외선 발광 반도체 발광소자 및 이에 사용되는 3족 질화물 반도체 템플릿 |
| JP6931827B2 (ja) | 2017-04-07 | 2021-09-08 | 日本製鋼所Ｍ＆Ｅ株式会社 | 結晶製造用圧力容器 |
| CN112553692A (zh) * | 2020-12-08 | 2021-03-26 | 山东大学 | 一种大尺寸氮化镓单晶生长设备及大尺寸体块氮化镓单晶的生长方法 |
Family Cites Families (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8656A (en) * | 1852-01-13 | Loom foe | ||
| US22154A (en) * | 1858-11-30 | Tackle-block | ||
| US4382026A (en) * | 1978-11-20 | 1983-05-03 | The Dow Chemical Company | Process for encapsulating radioactive organic liquids in a resin |
| DE3142356A1 (de) * | 1981-10-26 | 1983-05-11 | Alkem Gmbh, 6450 Hanau | "verfahren zum endkonditionieren von radioaktivem und/oder toxischem abfall" |
| DE3368339D1 (en) * | 1982-03-25 | 1987-01-22 | Hitachi Ltd | Process for solidifying radioactive waste |
| JPS5960299A (ja) * | 1982-09-29 | 1984-04-06 | 株式会社日立製作所 | 放射性廃棄物固化処理設備 |
| MX168680B (es) * | 1987-11-06 | 1993-06-02 | Rohm & Haas | Metodo de solidificacion y encapsulacion que utiliza particulas de polimero de nucleo, cubierta |
| US5164123A (en) * | 1988-07-08 | 1992-11-17 | Waste Seal, Inc. | Encapsulation of toxic waste |
| JPH0722692B2 (ja) | 1988-08-05 | 1995-03-15 | 株式会社日本製鋼所 | 水熱合成用容器 |
| US5098612A (en) * | 1988-12-10 | 1992-03-24 | Rowsell Farrell D | Method of preparing solidified and stabilized hazardous or radioactive liquids |
| CN1014535B (zh) | 1988-12-30 | 1991-10-30 | 中国科学院物理研究所 | 利用改进的矿化剂生长磷酸钛氧钾单晶的方法 |
| US5318730A (en) * | 1989-03-28 | 1994-06-07 | University Of Cincinnati | Process for containment of hazardous wastes |
| US5096860A (en) * | 1990-05-25 | 1992-03-17 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
| US5156581A (en) * | 1991-06-21 | 1992-10-20 | Chow John W | Finger conditioning device |
| US5481064A (en) * | 1992-05-08 | 1996-01-02 | Sanko Motor Chemical Co., Ltd. | Waste fluid treatment process |
| US5456204A (en) * | 1993-05-28 | 1995-10-10 | Alfa Quartz, C.A. | Filtering flow guide for hydrothermal crystal growth |
| JP3184717B2 (ja) | 1993-10-08 | 2001-07-09 | 三菱電線工業株式会社 | ＧａＮ単結晶およびその製造方法 |
| US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
| US5462785A (en) * | 1994-04-05 | 1995-10-31 | Holland; Herbert W. | Liquid hydrocarbon sorbing and solidifying pillow |
| EP0711853B1 (en) | 1994-04-08 | 1999-09-08 | Japan Energy Corporation | Method for growing gallium nitride compound semiconductor crystal, and gallium nitride compound semiconductor device |
| US5599520A (en) * | 1994-11-03 | 1997-02-04 | Garces; Juan M. | Synthesis of crystalline porous solids in ammonia |
| US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| JPH08250802A (ja) | 1995-03-09 | 1996-09-27 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
| JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
| JPH09134878A (ja) | 1995-11-10 | 1997-05-20 | Matsushita Electron Corp | 窒化ガリウム系化合物半導体の製造方法 |
| JP3778609B2 (ja) | 1996-04-26 | 2006-05-24 | 三洋電機株式会社 | 半導体素子の製造方法 |
| JPH107496A (ja) | 1996-06-25 | 1998-01-13 | Hitachi Cable Ltd | 窒化物結晶の製造方法およびその装置 |
| CN1065289C (zh) | 1996-07-22 | 2001-05-02 | 中国科学院物理研究所 | 一种制备掺杂钒酸盐单晶的水热生长方法 |
| JP3179346B2 (ja) * | 1996-08-27 | 2001-06-25 | 松下電子工業株式会社 | 窒化ガリウム結晶の製造方法 |
| JPH1084161A (ja) * | 1996-09-06 | 1998-03-31 | Sumitomo Electric Ind Ltd | 半導体レーザ及びその製造方法 |
| US5868837A (en) * | 1997-01-17 | 1999-02-09 | Cornell Research Foundation, Inc. | Low temperature method of preparing GaN single crystals |
| JP3491492B2 (ja) * | 1997-04-09 | 2004-01-26 | 松下電器産業株式会社 | 窒化ガリウム結晶の製造方法 |
| US5888389A (en) * | 1997-04-24 | 1999-03-30 | Hydroprocessing, L.L.C. | Apparatus for oxidizing undigested wastewater sludges |
| PL186905B1 (pl) | 1997-06-05 | 2004-03-31 | Cantrum Badan Wysokocisnieniow | Sposób wytwarzania wysokooporowych kryształów objętościowych GaN |
| US5844008A (en) * | 1997-06-10 | 1998-12-01 | Environmental Technology Associates | Process for treating municipal solid waste |
| TW519551B (en) | 1997-06-11 | 2003-02-01 | Hitachi Cable | Methods of fabricating nitride crystals and nitride crystals obtained therefrom |
| US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
| GB2333521B (en) | 1997-06-11 | 2000-04-26 | Hitachi Cable | Nitride crystal growth method |
| US6030549A (en) * | 1997-08-04 | 2000-02-29 | Brookhaven Science Associates | Dupoly process for treatment of depleted uranium and production of beneficial end products |
| JP3234799B2 (ja) | 1997-08-07 | 2001-12-04 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
| JP3239812B2 (ja) | 1997-08-07 | 2001-12-17 | 日本電気株式会社 | ＩｎＧａＮ層を含む窒化ガリウム系半導体層の結晶成長方法および窒化ガリウム系発光素子およびその製造方法 |
| US5916122A (en) * | 1997-08-26 | 1999-06-29 | Na Industries, Inc. | Solidification of aqueous waste |
| JPH11307813A (ja) | 1998-04-03 | 1999-11-05 | Hewlett Packard Co <Hp> | 発光装置、その製造方法およびディスプレイ |
| JP2000082863A (ja) | 1998-09-04 | 2000-03-21 | Sony Corp | 半導体発光素子の製造方法 |
| US6372041B1 (en) * | 1999-01-08 | 2002-04-16 | Gan Semiconductor Inc. | Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
| JP2000216494A (ja) | 1999-01-20 | 2000-08-04 | Sanyo Electric Co Ltd | 半導体発光素子およびその製造方法 |
| US6177057B1 (en) * | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
| JP3957918B2 (ja) | 1999-05-17 | 2007-08-15 | 独立行政法人科学技術振興機構 | 窒化ガリウム単結晶の育成方法 |
| FR2796657B1 (fr) * | 1999-07-20 | 2001-10-26 | Thomson Csf | Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique |
| AU7617800A (en) | 1999-09-27 | 2001-04-30 | Lumileds Lighting U.S., Llc | A light emitting diode device that produces white light by performing complete phosphor conversion |
| JP4145437B2 (ja) | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板 |
| CN1113988C (zh) | 1999-09-29 | 2003-07-09 | 中国科学院物理研究所 | 一种氮化镓单晶的热液生长方法 |
| US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
| JP3946427B2 (ja) * | 2000-03-29 | 2007-07-18 | 株式会社東芝 | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
| US6797857B2 (en) * | 2001-05-24 | 2004-09-28 | Deroyal Industries | Solidifier for a liquid |
| PL207400B1 (pl) * | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
| RU2296189C2 (ru) * | 2001-06-06 | 2007-03-27 | АММОНО Сп.з о.о. | Способ и устройство для получения объемного монокристаллического галлийсодержащего нитрида (варианты) |
| WO2004003261A1 (en) * | 2002-06-26 | 2004-01-08 | Ammono Sp. Z O.O. | Process for obtaining of bulk monocrystallline gallium-containing nitride |
| PL224993B1 (pl) * | 2002-12-11 | 2017-02-28 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| US20040144682A1 (en) * | 2003-01-27 | 2004-07-29 | Altmayer Scott Anthony | Waste material solidification pouch |
-
2001
- 2001-06-06 PL PL347918A patent/PL207400B1/pl unknown
-
2002
- 2002-05-17 UA UA20031212656A patent/UA78705C2/uk unknown
- 2002-06-06 EP EP02733363A patent/EP1405936B1/en not_active Expired - Lifetime
- 2002-06-06 KR KR1020037001727A patent/KR100853841B1/ko active IP Right Grant
- 2002-06-06 WO PCT/JP2002/005625 patent/WO2002101125A1/ja active Application Filing
- 2002-06-06 JP JP2003503866A patent/JP4113835B2/ja not_active Expired - Fee Related
- 2002-06-06 DE DE60230513T patent/DE60230513D1/de not_active Expired - Lifetime
- 2002-06-06 JP JP2003503867A patent/JP4113836B2/ja not_active Expired - Lifetime
- 2002-06-06 AT AT02733363T patent/ATE418630T1/de not_active IP Right Cessation
- 2002-06-06 US US10/479,858 patent/US7374615B2/en not_active Expired - Lifetime
- 2002-06-06 US US10/479,856 patent/US7081162B2/en not_active Expired - Lifetime
- 2002-06-06 CN CNB028019504A patent/CN1282771C/zh not_active Expired - Lifetime
- 2002-06-06 WO PCT/JP2002/005624 patent/WO2002101124A1/ja active Application Filing
- 2002-06-06 CN CNB028019512A patent/CN1260409C/zh not_active Expired - Fee Related
- 2002-06-06 KR KR1020037001728A patent/KR100853842B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN1463308A (zh) | 2003-12-24 |
| EP1405936A4 (en) | 2007-08-15 |
| CN1260409C (zh) | 2006-06-21 |
| US7374615B2 (en) | 2008-05-20 |
| CN1463307A (zh) | 2003-12-24 |
| JPWO2002101124A1 (ja) | 2004-09-24 |
| PL347918A1 (en) | 2002-12-16 |
| DE60230513D1 (de) | 2009-02-05 |
| JPWO2002101125A1 (ja) | 2004-09-24 |
| EP1405936B1 (en) | 2008-12-24 |
| KR100853841B1 (ko) | 2008-08-22 |
| US20040244680A1 (en) | 2004-12-09 |
| US7081162B2 (en) | 2006-07-25 |
| WO2002101124A1 (fr) | 2002-12-19 |
| JP4113835B2 (ja) | 2008-07-09 |
| KR20030036673A (ko) | 2003-05-09 |
| KR100853842B1 (ko) | 2008-08-22 |
| KR20030036674A (ko) | 2003-05-09 |
| JP4113836B2 (ja) | 2008-07-09 |
| US20050087124A1 (en) | 2005-04-28 |
| ATE418630T1 (de) | 2009-01-15 |
| PL207400B1 (pl) | 2010-12-31 |
| CN1282771C (zh) | 2006-11-01 |
| WO2002101125A1 (fr) | 2002-12-19 |
| EP1405936A1 (en) | 2004-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| UA78705C2 (en) | Process and apparatus for obtaining of bulky nitride monocrystal, containing gallium | |
| RU2296189C2 (ru) | Способ и устройство для получения объемного монокристаллического галлийсодержащего нитрида (варианты) | |
| AU2002347692C1 (en) | Bulk monocrystalline gallium nitride | |
| US8323405B2 (en) | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer | |
| US8444765B2 (en) | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride | |
| US20100031873A1 (en) | Basket process and apparatus for crystalline gallium-containing nitride | |
| AU2002328130A1 (en) | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | |
| US7314517B2 (en) | Process for obtaining bulk mono-crystalline gallium-containing nitride | |
| PL221055B1 (pl) | Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal | |
| PL225424B1 (pl) | Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal | |
| PL225425B1 (pl) | Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal |