TWI843755B - 用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積 - Google Patents

用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積 Download PDF

Info

Publication number
TWI843755B
TWI843755B TW108137242A TW108137242A TWI843755B TW I843755 B TWI843755 B TW I843755B TW 108137242 A TW108137242 A TW 108137242A TW 108137242 A TW108137242 A TW 108137242A TW I843755 B TWI843755 B TW I843755B
Authority
TW
Taiwan
Prior art keywords
film
sicxoynz
features
depositing
substrate
Prior art date
Application number
TW108137242A
Other languages
English (en)
Chinese (zh)
Other versions
TW202032660A (zh
Inventor
袁光璧
伊娃 那可維西域第
龔波
巴德里 Ｎ 凡拉德拉彥
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202032660A publication Critical patent/TW202032660A/zh
Application granted granted Critical
Publication of TWI843755B publication Critical patent/TWI843755B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW108137242A 2018-10-19 2019-10-16 用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積 TWI843755B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862748186P 2018-10-19 2018-10-19
US62/748,186 2018-10-19

Publications (2)

Publication Number Publication Date
TW202032660A TW202032660A (zh) 2020-09-01
TWI843755B true TWI843755B (zh) 2024-06-01

Family

ID=70284056

Family Applications (2)

Application Number Title Priority Date Filing Date
TW108137242A TWI843755B (zh) 2018-10-19 2019-10-16 用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積
TW113116078A TWI885880B (zh) 2018-10-19 2019-10-16 用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW113116078A TWI885880B (zh) 2018-10-19 2019-10-16 用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積

Country Status (6)

Country Link
US (4) US11848199B2 (https=)
JP (2) JP7487189B2 (https=)
KR (5) KR20230085954A (https=)
CN (1) CN113195786A (https=)
TW (2) TWI843755B (https=)
WO (1) WO2020081367A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
KR20220082751A (ko) * 2020-12-09 2022-06-17 에이에스엠 아이피 홀딩 비.브이. 실리콘-탄소 재료를 포함한 구조체를 형성하는 방법, 이 방법을 사용하여 형성된 구조체, 및 이 구조체를 형성하기 위한 시스템
KR20220130026A (ko) * 2021-03-17 2022-09-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12142480B2 (en) * 2021-08-13 2024-11-12 Applied Materials, Inc. Seam removal in high aspect ratio gap-fill
US20230360924A1 (en) * 2022-05-05 2023-11-09 Applied Materials, Inc. Low temperature carbon gapfill
CN115188709B (zh) * 2022-06-30 2025-04-08 北京北方华创微电子装备有限公司 在间隙结构中填充介电材料的方法和反应腔室
JP7830276B2 (ja) * 2022-09-16 2026-03-16 キオクシア株式会社 対象物処理装置、対象物処理方法、および原版の製造方法
CN117778998A (zh) * 2022-09-20 2024-03-29 江苏鲁汶仪器有限公司 低温高深宽沟槽的填充方法
US20240332001A1 (en) * 2023-03-30 2024-10-03 Applied Materials, Inc. Atomic layer deposition of silicon-carbon-and-nitrogen-containing materials
US20240331975A1 (en) * 2023-03-31 2024-10-03 Applied Materials, Inc. Densified seam-free silicon gap fill processes
JP2025132614A (ja) * 2024-02-29 2025-09-10 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2026006710A1 (en) * 2024-06-28 2026-01-02 Lam Research Corporation Carbon film deposition with reducing treatment after shaping etch
US20260018411A1 (en) * 2024-07-12 2026-01-15 Applied Materials, Inc. Remote icp radical deposition of tunable low-k dielectric films
US20260043143A1 (en) * 2024-08-06 2026-02-12 Applied Materials, Inc. Noble gas plasma cures to enable increased crosslinking in low-k dielectric films
CN119742224B (zh) * 2025-03-06 2025-06-13 合肥晶合集成电路股份有限公司 在栅极之间的沟槽中沉积应力介质层的方法及半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211170A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20150110968A1 (en) * 2013-10-22 2015-04-23 Lam Research Corporation Tandem source activation for cyclical deposition of films

Family Cites Families (239)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59128281A (ja) 1982-12-29 1984-07-24 信越化学工業株式会社 炭化けい素被覆物の製造方法
DE3811567A1 (de) 1988-04-07 1989-10-19 Wacker Chemie Gmbh Verfahren zur herstellung von organopolysilanen
KR940003787B1 (ko) 1988-09-14 1994-05-03 후지쓰 가부시끼가이샤 박막 형성장치 및 방법
JPH05326452A (ja) 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
FR2713666B1 (fr) 1993-12-15 1996-01-12 Air Liquide Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat métallique.
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US6013155A (en) 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
JP3164019B2 (ja) 1997-05-21 2001-05-08 日本電気株式会社 酸化シリコン膜およびその形成方法と成膜装置
US6624064B1 (en) 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6262445B1 (en) 1998-03-30 2001-07-17 Texas Instruments Incorporated SiC sidewall process
US6846391B1 (en) 1998-04-01 2005-01-25 Novellus Systems Process for depositing F-doped silica glass in high aspect ratio structures
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
US20010012667A1 (en) 1999-01-15 2001-08-09 Yi Ma Clustered system and method for formation of integrated circuit devices
US6399177B1 (en) 1999-06-03 2002-06-04 The Penn State Research Foundation Deposited thin film void-column network materials
ATE418158T1 (de) 1999-08-17 2009-01-15 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
DE60024191T2 (de) 1999-09-29 2006-07-20 Seiko Epson Corp. Druckgerät, Verfahren zu seiner Kontrolle und ein Datenspeichermedium zum Speichern eines das Verfahren ausführenden Computerprogrammes
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
TW516076B (en) 2000-06-13 2003-01-01 Applied Materials Inc Method and apparatus for increasing the utilization efficiency of gases during semiconductor processing
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6448186B1 (en) 2000-10-06 2002-09-10 Novellus Systems, Inc. Method and apparatus for use of hydrogen and silanes in plasma
US6365527B1 (en) 2000-10-06 2002-04-02 United Microelectronics Corp. Method for depositing silicon carbide in semiconductor devices
US6576345B1 (en) 2000-11-30 2003-06-10 Novellus Systems Inc Dielectric films with low dielectric constants
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US6936533B2 (en) 2000-12-08 2005-08-30 Samsung Electronics, Co., Ltd. Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
KR100705189B1 (ko) 2000-12-30 2007-04-06 주식회사 하이닉스반도체 반도체 소자의 박막 형성 방법
JP2002289616A (ja) 2001-03-28 2002-10-04 Mitsubishi Heavy Ind Ltd 成膜方法及び成膜装置
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US20030064154A1 (en) 2001-08-06 2003-04-03 Laxman Ravi K. Low-K dielectric thin films and chemical vapor deposition method of making same
CN1305119C (zh) 2001-08-30 2007-03-14 东京毅力科创株式会社 成膜方法和成膜装置
US20030154141A1 (en) 2001-09-18 2003-08-14 Pro Corp Holdings International Ltd. Image recognition inventory management system
US6838393B2 (en) 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6699784B2 (en) 2001-12-14 2004-03-02 Applied Materials Inc. Method for depositing a low k dielectric film (K>3.5) for hard mask application
US6818570B2 (en) 2002-03-04 2004-11-16 Asm Japan K.K. Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength
US20030194496A1 (en) 2002-04-11 2003-10-16 Applied Materials, Inc. Methods for depositing dielectric material
US6935553B2 (en) 2002-04-16 2005-08-30 Senju Metal Industry Co., Ltd. Reflow soldering method
JP4683825B2 (ja) 2002-04-24 2011-05-18 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US20040086434A1 (en) 2002-11-04 2004-05-06 Gadgil Pradad N. Apparatus and method for treating objects with radicals generated from plasma
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
JP4066332B2 (ja) 2002-10-10 2008-03-26 日本エー・エス・エム株式会社 シリコンカーバイド膜の製造方法
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4109531B2 (ja) 2002-10-25 2008-07-02 松下電器産業株式会社 半導体装置及びその製造方法
US7485570B2 (en) 2002-10-30 2009-02-03 Fujitsu Limited Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
DE10250889B4 (de) 2002-10-31 2006-12-07 Advanced Micro Devices, Inc., Sunnyvale Verbesserte SiC-Barrierenschicht für eine Kupfermetallisierungsschicht mit einem Dielektrikum mit kleinem ε und Verfahren zur Herstellung derselben
US20040084774A1 (en) 2002-11-02 2004-05-06 Bo Li Gas layer formation materials
US20040232552A1 (en) 2002-12-09 2004-11-25 Advanced Micro Devices, Inc. Air gap dual damascene process and structure
US6825130B2 (en) 2002-12-12 2004-11-30 Asm Japan K.K. CVD of porous dielectric materials
US7172792B2 (en) 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7972663B2 (en) 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7365029B2 (en) 2002-12-20 2008-04-29 Applied Materials, Inc. Method for silicon nitride chemical vapor deposition
US6790788B2 (en) 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
US7238393B2 (en) 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
US7084076B2 (en) 2003-02-27 2006-08-01 Samsung Electronics, Co., Ltd. Method for forming silicon dioxide film using siloxane
US20040197474A1 (en) 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP2004363241A (ja) 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
KR20050002525A (ko) 2003-06-30 2005-01-07 주식회사 하이닉스반도체 반도체 소자의 확산방지막 제조방법
JP3966249B2 (ja) 2003-07-30 2007-08-29 日産自動車株式会社 半導体装置及び半導体装置の製造方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US6849561B1 (en) 2003-08-18 2005-02-01 Asm Japan K.K. Method of forming low-k films
US20050100682A1 (en) 2003-11-06 2005-05-12 Tokyo Electron Limited Method for depositing materials on a substrate
US7163896B1 (en) 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7030041B2 (en) 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7102232B2 (en) 2004-04-19 2006-09-05 International Business Machines Corporation Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer
US7067409B2 (en) 2004-05-10 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7622400B1 (en) 2004-05-18 2009-11-24 Novellus Systems, Inc. Method for improving mechanical properties of low dielectric constant materials
JP2006013190A (ja) 2004-06-28 2006-01-12 Rohm Co Ltd 半導体装置の製造方法
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
WO2007001337A2 (en) 2004-08-18 2007-01-04 Dow Corning Corporation Coated substrates and methods for their preparation
US7422776B2 (en) 2004-08-24 2008-09-09 Applied Materials, Inc. Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
US7166544B2 (en) 2004-09-01 2007-01-23 Applied Materials, Inc. Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
GB0423685D0 (en) 2004-10-26 2004-11-24 Dow Corning Ireland Ltd Improved method for coating a substrate
US7335980B2 (en) 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
US7695765B1 (en) 2004-11-12 2010-04-13 Novellus Systems, Inc. Methods for producing low-stress carbon-doped oxide films with improved integration properties
US7662355B2 (en) 2004-11-29 2010-02-16 National University Corporation Tokyo University Of Agriculture And Technology Silicon nanosized linear body and a method for producing a silicon nanosized linear body
US7259111B2 (en) 2005-01-19 2007-08-21 Applied Materials, Inc. Interface engineering to improve adhesion between low k stacks
US7189658B2 (en) 2005-05-04 2007-03-13 Applied Materials, Inc. Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
KR101272097B1 (ko) 2005-06-03 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 집적회로 장치 및 그의 제조방법
JP2006351694A (ja) 2005-06-14 2006-12-28 Fujitsu Ltd 半導体装置およびその製造方法
JP2007053133A (ja) 2005-08-15 2007-03-01 Toshiba Corp 半導体装置及びその製造方法
JP2007053276A (ja) * 2005-08-19 2007-03-01 Angstrom Technologies:Kk 半導体装置の製造方法及び製造装置
US8021992B2 (en) 2005-09-01 2011-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio gap fill application using high density plasma chemical vapor deposition
WO2007075369A1 (en) 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US7695567B2 (en) 2006-02-10 2010-04-13 Applied Materials, Inc. Water vapor passivation of a wall facing a plasma
CN101427361A (zh) 2006-02-28 2009-05-06 St微电子(克偌林斯2)股份有限公司 电介质材料中的金属互连
JP5040913B2 (ja) 2006-03-31 2012-10-03 富士通セミコンダクター株式会社 半導体装置の製造方法
EP2036120A4 (en) 2006-05-30 2012-02-08 Applied Materials Inc Novel Deposition Plasmas Cure Process for Improving the Film Quality of Silicon Dioxide
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
US20080064173A1 (en) 2006-09-08 2008-03-13 United Microelectronics Corp. Semiconductor device, cmos device and fabricating methods of the same
US8053372B1 (en) 2006-09-12 2011-11-08 Novellus Systems, Inc. Method of reducing plasma stabilization time in a cyclic deposition process
US20080090022A1 (en) 2006-10-12 2008-04-17 Energy Conversion Devices, Inc. High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
DE102006058771B4 (de) 2006-12-12 2018-03-01 Schott Ag Behälter mit verbesserter Restentleerbarkeit und Verfahren zu dessen Herstellung
US20080156264A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
CN101017834A (zh) 2007-03-02 2007-08-15 上海集成电路研发中心有限公司 一种soi集成电路结构及其制作方法
JP5140290B2 (ja) 2007-03-02 2013-02-06 富士フイルム株式会社 絶縁膜
US7615482B2 (en) 2007-03-23 2009-11-10 International Business Machines Corporation Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
US20090264277A1 (en) 2007-04-17 2009-10-22 Dr. Rishi Raj Picoscale catalysts for hydrogen catalysis
US7955955B2 (en) 2007-05-10 2011-06-07 International Business Machines Corporation Using crack arrestor for inhibiting damage from dicing and chip packaging interaction failures in back end of line structures
JP5022116B2 (ja) 2007-06-18 2012-09-12 三菱重工業株式会社 半導体装置の製造方法及び製造装置
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
CN101743631B (zh) 2007-07-13 2012-12-26 应用材料公司 硼衍生的材料的沉积方法
US20090061649A1 (en) 2007-08-28 2009-03-05 International Business Machines Corporation LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT
JP2009075285A (ja) 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
US7964442B2 (en) 2007-10-09 2011-06-21 Applied Materials, Inc. Methods to obtain low k dielectric barrier with superior etch resistivity
WO2009057223A1 (ja) 2007-11-02 2009-05-07 Canon Anelva Corporation 表面処理装置およびその基板処理方法
US9217200B2 (en) 2007-12-21 2015-12-22 Asm International N.V. Modification of nanoimprint lithography templates by atomic layer deposition
US7648899B1 (en) 2008-02-28 2010-01-19 Novellus Systems, Inc. Interfacial layers for electromigration resistance improvement in damascene interconnects
US9591738B2 (en) 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
KR20090106112A (ko) 2008-04-04 2009-10-08 울산대학교 산학협력단 다결정 탄화규소 버퍼층위에 마이크로 또는 나노전자기계시스템용 질화알루미늄막 증착방법
US20090258487A1 (en) 2008-04-14 2009-10-15 Keng-Chu Lin Method for Improving the Reliability of Low-k Dielectric Materials
CN102046841B (zh) 2008-05-07 2014-05-28 普林斯顿大学理事会 用于电子器件或其他物品上的涂层中的混合层
JP5230274B2 (ja) 2008-06-02 2013-07-10 株式会社東芝 不揮発性半導体記憶装置
KR101629193B1 (ko) 2008-06-26 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작 방법
US20100025370A1 (en) 2008-08-04 2010-02-04 Applied Materials, Inc. Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US8168268B2 (en) 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US8809195B2 (en) 2008-10-20 2014-08-19 Asm America, Inc. Etching high-k materials
US8637396B2 (en) 2008-12-01 2014-01-28 Air Products And Chemicals, Inc. Dielectric barrier deposition using oxygen containing precursor
US20100224322A1 (en) 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
KR102003651B1 (ko) 2009-05-13 2019-07-24 에스아이오2 메디컬 프로덕츠, 인크. 유기실리콘 전구체를 이용한 ｐｅｃｖｄ 코팅
US8268722B2 (en) 2009-06-03 2012-09-18 Novellus Systems, Inc. Interfacial capping layers for interconnects
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
US8084339B2 (en) 2009-06-12 2011-12-27 Novellus Systems, Inc. Remote plasma processing of interface surfaces
US8980382B2 (en) 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
KR20120053003A (ko) 2009-07-22 2012-05-24 어플라이드 머티어리얼스, 인코포레이티드 할로우 캐소드 샤워헤드
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
US8202783B2 (en) 2009-09-29 2012-06-19 International Business Machines Corporation Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication
JP5656010B2 (ja) 2009-12-04 2015-01-21 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ハードマスク膜を形成する方法およびハードマスク膜を成膜する装置
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
TWI579916B (zh) 2009-12-09 2017-04-21 諾菲勒斯系統公司 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
JP5394270B2 (ja) 2010-01-25 2014-01-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8703625B2 (en) 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
US8399350B2 (en) 2010-02-05 2013-03-19 International Business Machines Corporation Formation of air gap with protection of metal lines
KR101123829B1 (ko) 2010-02-12 2012-03-20 국제엘렉트릭코리아 주식회사 기판 처리 장치 및 방법
US8349746B2 (en) 2010-02-23 2013-01-08 Applied Materials, Inc. Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure
JP5476161B2 (ja) 2010-03-02 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN102844848A (zh) 2010-03-05 2012-12-26 应用材料公司 通过自由基成分化学气相沉积的共形层
WO2011113177A1 (en) 2010-03-17 2011-09-22 Applied Materials, Inc. Method and apparatus for remote plasma source assisted silicon-containing film deposition
US20120142172A1 (en) 2010-03-25 2012-06-07 Keith Fox Pecvd deposition of smooth polysilicon films
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8288292B2 (en) 2010-03-30 2012-10-16 Novellus Systems, Inc. Depositing conformal boron nitride film by CVD without plasma
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9324576B2 (en) * 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
TW201216331A (en) 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
WO2012061593A2 (en) 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
CN102468434A (zh) 2010-11-17 2012-05-23 中芯国际集成电路制造(北京)有限公司 相变存储器的制作方法
KR101787041B1 (ko) 2010-11-17 2017-10-18 삼성전자주식회사 식각방지막이 구비된 반도체 소자 및 그 제조방법
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
CN102693931A (zh) * 2011-03-23 2012-09-26 中国科学院微电子研究所 一种薄膜填充方法
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
US8637412B2 (en) 2011-08-19 2014-01-28 International Business Machines Corporation Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD
KR101334640B1 (ko) 2011-08-22 2013-11-29 서울시립대학교 산학협력단 고강도 실리콘옥시카바이드 결합 탄화규소 소재 제조용 조성물, 탄화규소 소재 및 그 제조방법
JP2013055136A (ja) 2011-09-01 2013-03-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
SG10201607194PA (en) * 2011-09-23 2016-10-28 Novellus Systems Inc Plasma activated conformal dielectric film deposition
JP2013074093A (ja) 2011-09-28 2013-04-22 Renesas Electronics Corp リフロー前処理装置およびリフロー前処理方法
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
WO2013073216A1 (ja) 2011-11-14 2013-05-23 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
US9041041B2 (en) 2012-01-07 2015-05-26 Nec Corporation Optical device, optical element, and image display device
US8586487B2 (en) 2012-01-18 2013-11-19 Applied Materials, Inc. Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
US20130242493A1 (en) 2012-03-13 2013-09-19 Qualcomm Mems Technologies, Inc. Low cost interposer fabricated with additive processes
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
US8828884B2 (en) 2012-05-23 2014-09-09 Sandisk Technologies Inc. Multi-level contact to a 3D memory array and method of making
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10832904B2 (en) * 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US10211310B2 (en) 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
JP6172660B2 (ja) 2012-08-23 2017-08-02 東京エレクトロン株式会社 成膜装置、及び、低誘電率膜を形成する方法
US20140120678A1 (en) 2012-10-29 2014-05-01 Matheson Tri-Gas Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
JP6047795B2 (ja) 2012-11-12 2016-12-21 日東電工株式会社 アンテナモジュール
WO2014097280A1 (en) 2012-12-21 2014-06-26 Prasad Narhar Gadgil Methods of low temperature deposition of ceramic thin films
US8766404B1 (en) 2013-01-10 2014-07-01 Intermolecular, Inc. Device design for partially oriented rutile dielectrics
US8928149B2 (en) 2013-03-12 2015-01-06 Macronix International Co., Ltd. Interlayer conductor and method for forming
KR102136769B1 (ko) 2013-03-14 2020-07-22 어플라이드 머티어리얼스, 인코포레이티드 Pecvd 프로세스에서 우수한 접착 강도를 갖고 유전 상수 증가를 최소화하기 위한 접착 층
US20140302690A1 (en) 2013-04-04 2014-10-09 Applied Materials, Inc. Chemical linkers to impart improved mechanical strength to flowable films
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US9382268B1 (en) 2013-07-19 2016-07-05 American Air Liquide, Inc. Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications
US8927442B1 (en) 2013-07-25 2015-01-06 International Business Machines Corporation SiCOH hardmask with graded transition layers
US9543140B2 (en) 2013-10-16 2017-01-10 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US9371579B2 (en) * 2013-10-24 2016-06-21 Lam Research Corporation Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
JP6267953B2 (ja) 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
US9362186B2 (en) 2014-07-18 2016-06-07 Applied Materials, Inc. Polishing with eddy current feed meaurement prior to deposition of conductive layer
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US20160032452A1 (en) 2014-08-04 2016-02-04 Veeco Ald Inc. Atomic Layer Deposition Method Using Source Precursor Transformed by Hydrogen Radical Exposure
KR101980247B1 (ko) 2014-11-21 2019-05-21 주식회사 원익아이피에스 저유전상수를 가지는 적층구조체의 제조방법
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9520295B2 (en) 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
TWI693295B (zh) 2015-02-06 2020-05-11 美商諾發系統有限公司 碳化矽膜之保形沉積
US9391086B1 (en) 2015-02-23 2016-07-12 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory device
US20160268286A1 (en) 2015-03-11 2016-09-15 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device and semiconductor device
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US20160314964A1 (en) * 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
CN107636197B (zh) 2015-06-05 2020-01-07 应用材料公司 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层
KR102658085B1 (ko) 2015-07-09 2024-04-16 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 알킬아미노 치환 할로카보실란 전구체
US9711360B2 (en) 2015-08-27 2017-07-18 Applied Materials, Inc. Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
WO2017049253A1 (en) 2015-09-18 2017-03-23 Applied Materials, Inc. Methods for depositing conformal bcn films
US10418243B2 (en) 2015-10-09 2019-09-17 Applied Materials, Inc. Ultra-high modulus and etch selectivity boron-carbon hardmask films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
JP6845252B2 (ja) 2015-12-21 2021-03-17 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のための組成物及びそれを用いた方法
US10115601B2 (en) 2016-02-03 2018-10-30 Tokyo Electron Limited Selective film formation for raised and recessed features using deposition and etching processes
KR20190011817A (ko) * 2016-06-25 2019-02-07 어플라이드 머티어리얼스, 인코포레이티드 갭충전 애플리케이션들을 위한 유동가능 비정질 실리콘 막들
US20180033614A1 (en) 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US10468244B2 (en) * 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
TW201822259A (zh) 2016-09-09 2018-06-16 美商諾發系統有限公司 氧摻雜矽碳化物膜之基於遠程電漿的沉積
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US9837270B1 (en) * 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
JP6807775B2 (ja) 2017-02-28 2021-01-06 東京エレクトロン株式会社 成膜方法及びプラズマ処理装置
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211170A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20150110968A1 (en) * 2013-10-22 2015-04-23 Lam Research Corporation Tandem source activation for cyclical deposition of films

Also Published As

Publication number Publication date
WO2020081367A1 (en) 2020-04-23
CN113195786A (zh) 2021-07-30
US11848199B2 (en) 2023-12-19
JP2024096365A (ja) 2024-07-12
TW202032660A (zh) 2020-09-01
JP7487189B2 (ja) 2024-05-20
US20240063015A1 (en) 2024-02-22
KR20230085953A (ko) 2023-06-14
US12300488B2 (en) 2025-05-13
KR20230085954A (ko) 2023-06-14
KR102921701B1 (ko) 2026-02-03
KR20210063434A (ko) 2021-06-01
TW202439447A (zh) 2024-10-01
US20210391171A1 (en) 2021-12-16
KR20220056249A (ko) 2022-05-04
KR20220056248A (ko) 2022-05-04
US20220238334A1 (en) 2022-07-28
TWI885880B (zh) 2025-06-01
JP2022505310A (ja) 2022-01-14
US20220238333A1 (en) 2022-07-28

Similar Documents

Publication Publication Date Title
TWI843755B (zh) 用於間隙填充的遠程氫電漿暴露以及摻雜或未摻雜矽碳化物沉積
US12359311B2 (en) Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US20250149328A1 (en) Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US11264234B2 (en) Conformal deposition of silicon carbide films
US9837270B1 (en) Densification of silicon carbide film using remote plasma treatment
US10832904B2 (en) Remote plasma based deposition of oxygen doped silicon carbide films
CN103975419B (zh) 等离子体活化保形电介质膜沉积
TW201823159A (zh) 漸變或多層矽碳化物膜之基於遠端電漿的沉積
KR102542281B1 (ko) 이종 전구체 상호 작용을 사용한 탄화 실리콘 막의 컨포멀한 증착
TWI837151B (zh) 使用含矽及含碳前驅物的基於遠端電漿之矽碳化物膜沉積