JP6172660B2 - 成膜装置、及び、低誘電率膜を形成する方法 - Google Patents
成膜装置、及び、低誘電率膜を形成する方法 Download PDFInfo
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- JP6172660B2 JP6172660B2 JP2013096456A JP2013096456A JP6172660B2 JP 6172660 B2 JP6172660 B2 JP 6172660B2 JP 2013096456 A JP2013096456 A JP 2013096456A JP 2013096456 A JP2013096456 A JP 2013096456A JP 6172660 B2 JP6172660 B2 JP 6172660B2
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- plasma generation
- film
- gas
- processing chamber
- generation chamber
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- QFMAXCHTUPRFOZ-UHFFFAOYSA-N dimethyl-di(propan-2-yl)silane Chemical compound CC(C)[Si](C)(C)C(C)C QFMAXCHTUPRFOZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052753 mercury Inorganic materials 0.000 description 1
- UIJMUCVCCQKMPZ-UHFFFAOYSA-N methoxy-dimethyl-(2-methylpropyl)silane Chemical compound CO[Si](C)(C)CC(C)C UIJMUCVCCQKMPZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
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- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/907—Oxycarbides; Sulfocarbides; Mixture of carbides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
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- H—ELECTRICITY
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- H01J37/32431—Constructional details of the reactor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
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- Chemical Vapour Deposition (AREA)
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Description
C=1/4×v×A …(1)
で定義される。式(1)において、vは、分子の平均速度であり、Aは、
A=π×1/4×D2×B …(2)
で定義される。式(2)において、Dは、遮蔽部40の直径であり、Bは、開口率である。式(1)及び式(2)から明らかなように、大口径の直径の被処理基体Wに成膜を行うために、遮蔽部40の直径を大きくすると、遮蔽部40のコンダクタンスは、半径の2乗の影響を受けて大きくなる。したがって、成膜装置10では、処理室S2に供給された前駆体ガスが遮蔽部40を介してプラズマ生成室S1に拡散することを抑制する対策が必要となる。
Claims (5)
- Si原子、O原子、C原子、及びH原子を含む重合体からなるSiCO膜を形成するための成膜装置であって、
プラズマ生成室と該プラズマ生成室の下方の処理室とを含む空間を画成する処理容器と、
前記処理室に設けられた載置台と、
前記プラズマ生成室に希ガス及び水素ガスを供給する第1のガス供給系と、
前記プラズマ生成室を封止するように設けられた誘電体窓と、
前記誘電体窓を介して前記プラズマ生成室にマイクロ波を供給するアンテナと、
前記処理室に前記SiCO膜の前駆体ガスを供給する第2のガス供給系と、
前記プラズマ生成室と前記処理室との間に設けられており、該プラズマ生成室と該処理室とを連通させる複数の開口を有し、紫外線に対する遮蔽性を有する遮蔽部と、
前記処理室に接続された排気装置と、
前記遮蔽部に接続されたバイアス電源であり、前記プラズマ生成室において生成されたイオンを前記遮蔽部に引き込むためのバイアス電力を前記遮蔽部に与える該バイアス電源と、
前記プラズマ生成室の圧力が前記処理室の圧力の4倍以上となり、且つ、前記処理室から前記プラズマ生成室への前記前駆体ガスの拡散度が、0.01以下になるよう、前記第1のガス供給系、前記第2のガス供給系、及び、前記排気装置を制御する制御部と、
を備え、
前記拡散度は、前記処理室への前記前駆体ガスの流量が1sccm増加したときの前記プラズマ生成室の圧力のパスカル単位での増加量として定義される、成膜装置。 - 前記第2のガス供給系は、前記処理室に、前記前駆体ガスと共にトルエンガスを供給する、請求項1に記載の成膜装置。
- 前記遮蔽部は、40cm以上の直径を有する、請求項1又は2に記載の成膜装置。
- 前記遮蔽部は、前記プラズマ生成室から前記処理室に向かうイオンに電子を供与する請求項1〜3の何れか一項に記載の成膜装置。
- 処理容器内の処理室に設けられた被処理基体上に、Si原子、O原子、C原子、及びH原子を含む重合体からなるSiCO膜である低誘電率膜を形成する方法であって、
前記処理容器内において前記処理室の上方に設けられたプラズマ生成室においてマイクロ波を用いて希ガス及び水素ガスのプラズマを生成し、
前記プラズマ生成室と前記処理室との間に設けられており、該プラズマ生成室と該処理室とを連通させる複数の開口を有し、紫外線に対する遮蔽性を有する遮蔽部に、前記プラズマ生成室において生成されたイオンを該遮蔽部に引き込むためのバイアス電力を与え、該遮蔽部を介して前記プラズマ生成室から前記処理室に粒子を供給し、
前記処理室に前記SiCO膜の前駆体ガスを供給する、
ことを含み、
前記プラズマ生成室の圧力が前記処理室の圧力の4倍以上に設定され、且つ、前記処理室から前記プラズマ生成室への前記前駆体ガスの拡散度が、0.01以下に設定されており、ここで、前記拡散度は、前記処理室への前記前駆体ガスの流量が1sccm増加したときの前記プラズマ生成室の圧力のパスカル単位での増加量として定義される、方法。
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JP2013096456A JP6172660B2 (ja) | 2012-08-23 | 2013-05-01 | 成膜装置、及び、低誘電率膜を形成する方法 |
KR1020157003666A KR102030223B1 (ko) | 2012-08-23 | 2013-06-18 | 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조 |
US14/422,455 US20150214015A1 (en) | 2012-08-23 | 2013-06-18 | FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE |
PCT/JP2013/066731 WO2014030414A1 (ja) | 2012-08-23 | 2013-06-18 | 成膜装置、低誘電率膜を形成する方法、SiCO膜、及びダマシン配線構造 |
TW102130031A TW201419414A (zh) | 2012-08-23 | 2013-08-22 | 成膜裝置、形成低介電係數膜之方法、SiCO膜、以及金屬鑲嵌配線構造 |
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US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US20150118416A1 (en) * | 2013-10-31 | 2015-04-30 | Semes Co., Ltd. | Substrate treating apparatus and method |
WO2015136743A1 (ja) * | 2014-03-13 | 2015-09-17 | 東京エレクトロン株式会社 | 低誘電率膜 |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
JP2016219450A (ja) * | 2015-05-14 | 2016-12-22 | 株式会社アルバック | 基板処理装置 |
CN106601580B (zh) * | 2015-10-19 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 进气机构及反应腔室 |
US10840087B2 (en) | 2018-07-20 | 2020-11-17 | Lam Research Corporation | Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films |
WO2020023378A1 (en) * | 2018-07-24 | 2020-01-30 | Lam Research Corporation | Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors |
US11848199B2 (en) | 2018-10-19 | 2023-12-19 | Lam Research Corporation | Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill |
KR102617960B1 (ko) | 2019-08-12 | 2023-12-26 | 삼성전자주식회사 | 2-스텝 갭-필 공정을 이용하여 반도체 소자를 형성하는 방법 |
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JP2005089823A (ja) * | 2003-09-17 | 2005-04-07 | Seiji Sagawa | 成膜装置および成膜方法 |
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