CN113195786A - 用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积 - Google Patents

用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积 Download PDF

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CN113195786A
CN113195786A CN201980084273.XA CN201980084273A CN113195786A CN 113195786 A CN113195786 A CN 113195786A CN 201980084273 A CN201980084273 A CN 201980084273A CN 113195786 A CN113195786 A CN 113195786A
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sic
film
remote
thickness
features
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袁光璧
耶瓦·纳克维丘特
龚波
巴德里·N·瓦拉达拉简
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Lam Research Corp
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Lam Research Corp
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201980084273.XA 2018-10-19 2019-10-10 用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积 Pending CN113195786A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862748186P 2018-10-19 2018-10-19
US62/748,186 2018-10-19
PCT/US2019/055671 WO2020081367A1 (en) 2018-10-19 2019-10-10 Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

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CN113195786A true CN113195786A (zh) 2021-07-30

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US (4) US11848199B2 (https=)
JP (2) JP7487189B2 (https=)
KR (5) KR20230085954A (https=)
CN (1) CN113195786A (https=)
TW (2) TWI843755B (https=)
WO (1) WO2020081367A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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CN115188709A (zh) * 2022-06-30 2022-10-14 北京北方华创微电子装备有限公司 在间隙结构中填充介电材料的方法和反应腔室
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