TWI795349B - 積層體 - Google Patents

積層體 Download PDF

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Publication number
TWI795349B
TWI795349B TW105143250A TW105143250A TWI795349B TW I795349 B TWI795349 B TW I795349B TW 105143250 A TW105143250 A TW 105143250A TW 105143250 A TW105143250 A TW 105143250A TW I795349 B TWI795349 B TW I795349B
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TW
Taiwan
Prior art keywords
layer
substrate
oxide semiconductor
metal oxide
electrode layer
Prior art date
Application number
TW105143250A
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English (en)
Chinese (zh)
Other versions
TW201737485A (zh
Inventor
上岡義弘
関谷隆司
笘井重和
川嶋絵美
霍間勇輝
竹嶋基浩
Original Assignee
日商出光興產股份有限公司
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Publication of TW201737485A publication Critical patent/TW201737485A/zh
Application granted granted Critical
Publication of TWI795349B publication Critical patent/TWI795349B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
TW105143250A 2015-12-25 2016-12-26 積層體 TWI795349B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP??2015-254555 2015-12-25
JP2015254555 2015-12-25
JP2016159352 2016-08-15
JP??2016-159352 2016-08-15

Publications (2)

Publication Number Publication Date
TW201737485A TW201737485A (zh) 2017-10-16
TWI795349B true TWI795349B (zh) 2023-03-11

Family

ID=59090563

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105143250A TWI795349B (zh) 2015-12-25 2016-12-26 積層體

Country Status (6)

Country Link
US (1) US11189737B2 (enExample)
JP (2) JP6976858B2 (enExample)
KR (1) KR102382656B1 (enExample)
CN (1) CN108475702B (enExample)
TW (1) TWI795349B (enExample)
WO (1) WO2017111174A1 (enExample)

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JP7124059B2 (ja) 2017-08-31 2022-08-23 マイクロン テクノロジー，インク． 半導体デバイス、トランジスタ、および金属酸化物半導体デバイスを接触させるための関連する方法
US10943953B2 (en) 2017-08-31 2021-03-09 Micron Technology, Inc. Semiconductor devices, hybrid transistors, and related methods
JP6802818B2 (ja) * 2018-03-06 2020-12-23 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
CN118922006A (zh) 2018-07-17 2024-11-08 索尼半导体解决方案公司 摄像元件、层叠型摄像元件和固态摄像装置
JP7093329B2 (ja) * 2019-09-02 2022-06-29 信越化学工業株式会社 積層構造体、半導体装置及び半導体システム
CN110634959B (zh) * 2019-09-20 2021-01-08 山东大学 一种基于igzo肖特基二极管动态调控超材料的方法
CN110890280B (zh) * 2019-11-27 2024-02-06 山东大学 一种利用钯/钯氧化物双层肖特基电极制备氧化物半导体肖特基二极管的方法
CN111129166B (zh) * 2019-12-13 2023-02-07 合肥中科微电子创新中心有限公司 氧化镓基半导体结构及其制备方法
CN111081765B (zh) * 2019-12-31 2021-06-29 山东大学 一种基于铟铝锌氧化物的肖特基二极管及其制备方法
CN111081788B (zh) * 2019-12-31 2021-06-29 山东大学 一种底部为肖特基接触的铟铝锌氧化物二极管及其制备方法
JPWO2021157720A1 (enExample) * 2020-02-07 2021-08-12
TWI887353B (zh) * 2020-02-07 2025-06-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件、半導體裝置及半導體系統
JP7500293B2 (ja) * 2020-06-12 2024-06-17 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法
JPWO2022210732A1 (enExample) * 2021-03-30 2022-10-06
KR20240041395A (ko) * 2022-09-22 2024-04-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN120570083A (zh) * 2023-01-31 2025-08-29 日亚化学工业株式会社 二极管、使用二极管的整流电路及接收整流天线

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WO2015025499A1 (ja) * 2013-08-19 2015-02-26 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
JP2015109315A (ja) * 2013-12-03 2015-06-11 出光興産株式会社 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置
US20150325660A1 (en) * 2014-05-08 2015-11-12 Flosfia Inc. Crystalline multilayer structure and semiconductor device

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US20010034116A1 (en) * 2000-03-22 2001-10-25 Lg Electronics Inc. Semiconductor device with schottky contact and method for forming the same
TW201140939A (en) * 2010-05-05 2011-11-16 Yageo Corp Wideband antenna for mobile communication
TW201203654A (en) * 2010-06-24 2012-01-16 Merck Patent Gmbh Process for modifying electrodes in an organic electronic device
TW201212233A (en) * 2010-09-07 2012-03-16 Toshiba Kk Semiconductor device
WO2015025500A1 (ja) * 2013-08-19 2015-02-26 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
WO2015025499A1 (ja) * 2013-08-19 2015-02-26 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
TW201515243A (zh) * 2013-08-19 2015-04-16 Idemitsu Kosan Co 氧化物半導體基板及肖特基能障二極體
JP2015109315A (ja) * 2013-12-03 2015-06-11 出光興産株式会社 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置
US20150325660A1 (en) * 2014-05-08 2015-11-12 Flosfia Inc. Crystalline multilayer structure and semiconductor device
JP2015227279A (ja) * 2014-05-08 2015-12-17 株式会社Flosfia 結晶性積層構造体および半導体装置

Also Published As

Publication number Publication date
JP2021141337A (ja) 2021-09-16
KR20180099655A (ko) 2018-09-05
TW201737485A (zh) 2017-10-16
JPWO2017111174A1 (ja) 2018-10-18
CN108475702A (zh) 2018-08-31
JP6976858B2 (ja) 2021-12-08
US11189737B2 (en) 2021-11-30
CN108475702B (zh) 2021-11-23
US20200266304A1 (en) 2020-08-20
KR102382656B1 (ko) 2022-04-04
WO2017111174A1 (ja) 2017-06-29

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