CN108475702B - 层叠体 - Google Patents

层叠体 Download PDF

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Publication number
CN108475702B
CN108475702B CN201680075286.7A CN201680075286A CN108475702B CN 108475702 B CN108475702 B CN 108475702B CN 201680075286 A CN201680075286 A CN 201680075286A CN 108475702 B CN108475702 B CN 108475702B
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substrate
layer
laminate according
oxide semiconductor
electrode layer
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CN201680075286.7A
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Chinese (zh)
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CN108475702A (zh
Inventor
上冈义弘
关谷隆司
笘井重和
川岛绘美
霍间勇辉
竹岛基浩
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
CN201680075286.7A 2015-12-25 2016-12-26 层叠体 Active CN108475702B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015-254555 2015-12-25
JP2015254555 2015-12-25
JP2016159352 2016-08-15
JP2016-159352 2016-08-15
PCT/JP2016/088765 WO2017111174A1 (ja) 2015-12-25 2016-12-26 積層体

Publications (2)

Publication Number Publication Date
CN108475702A CN108475702A (zh) 2018-08-31
CN108475702B true CN108475702B (zh) 2021-11-23

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CN201680075286.7A Active CN108475702B (zh) 2015-12-25 2016-12-26 层叠体

Country Status (6)

Country Link
US (1) US11189737B2 (enExample)
JP (2) JP6976858B2 (enExample)
KR (1) KR102382656B1 (enExample)
CN (1) CN108475702B (enExample)
TW (1) TWI795349B (enExample)
WO (1) WO2017111174A1 (enExample)

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KR102402945B1 (ko) 2017-08-31 2022-05-30 마이크론 테크놀로지, 인크 금속 산화물 반도체 디바이스의 접촉을 위한 반도체 디바이스, 트랜지스터, 및 관련된 방법
KR102396806B1 (ko) 2017-08-31 2022-05-12 마이크론 테크놀로지, 인크 반도체 장치, 하이브리드 트랜지스터 및 관련 방법
JP6802818B2 (ja) * 2018-03-06 2020-12-23 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
WO2020017330A1 (ja) * 2018-07-17 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7093329B2 (ja) * 2019-09-02 2022-06-29 信越化学工業株式会社 積層構造体、半導体装置及び半導体システム
CN110634959B (zh) * 2019-09-20 2021-01-08 山东大学 一种基于igzo肖特基二极管动态调控超材料的方法
CN110890280B (zh) * 2019-11-27 2024-02-06 山东大学 一种利用钯/钯氧化物双层肖特基电极制备氧化物半导体肖特基二极管的方法
CN111129166B (zh) * 2019-12-13 2023-02-07 合肥中科微电子创新中心有限公司 氧化镓基半导体结构及其制备方法
CN111081765B (zh) * 2019-12-31 2021-06-29 山东大学 一种基于铟铝锌氧化物的肖特基二极管及其制备方法
CN111081788B (zh) * 2019-12-31 2021-06-29 山东大学 一种底部为肖特基接触的铟铝锌氧化物二极管及其制备方法
JPWO2021157719A1 (enExample) * 2020-02-07 2021-08-12
TW202147529A (zh) * 2020-02-07 2021-12-16 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件及半導體裝置
JP7500293B2 (ja) * 2020-06-12 2024-06-17 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法
WO2022210732A1 (ja) * 2021-03-30 2022-10-06 出光興産株式会社 光電変換素子および光電変換素子の製造方法
KR20240041395A (ko) * 2022-09-22 2024-04-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2024162270A1 (ja) * 2023-01-31 2024-08-08 日亜化学工業株式会社 ダイオード、これを用いた整流回路、及び受電レクテナ

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JP2015109315A (ja) * 2013-12-03 2015-06-11 出光興産株式会社 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置
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CN105097896A (zh) * 2014-05-08 2015-11-25 Flosfia株式会社 结晶性层叠结构体以及半导体装置

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Publication number Publication date
CN108475702A (zh) 2018-08-31
US11189737B2 (en) 2021-11-30
US20200266304A1 (en) 2020-08-20
JP2021141337A (ja) 2021-09-16
TW201737485A (zh) 2017-10-16
KR20180099655A (ko) 2018-09-05
WO2017111174A1 (ja) 2017-06-29
JPWO2017111174A1 (ja) 2018-10-18
JP6976858B2 (ja) 2021-12-08
KR102382656B1 (ko) 2022-04-04
TWI795349B (zh) 2023-03-11

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