JP6976858B2 - 積層体 - Google Patents

積層体 Download PDF

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Publication number
JP6976858B2
JP6976858B2 JP2017558338A JP2017558338A JP6976858B2 JP 6976858 B2 JP6976858 B2 JP 6976858B2 JP 2017558338 A JP2017558338 A JP 2017558338A JP 2017558338 A JP2017558338 A JP 2017558338A JP 6976858 B2 JP6976858 B2 JP 6976858B2
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JP
Japan
Prior art keywords
layer
substrate
oxide semiconductor
metal oxide
electrode layer
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JP2017558338A
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English (en)
Japanese (ja)
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JPWO2017111174A1 (ja
Inventor
義弘 上岡
隆司 関谷
重和 笘井
絵美 川嶋
勇輝 霍間
基浩 竹嶋
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of JPWO2017111174A1 publication Critical patent/JPWO2017111174A1/ja
Priority to JP2021095082A priority Critical patent/JP2021141337A/ja
Application granted granted Critical
Publication of JP6976858B2 publication Critical patent/JP6976858B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
JP2017558338A 2015-12-25 2016-12-26 積層体 Active JP6976858B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021095082A JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015254555 2015-12-25
JP2015254555 2015-12-25
JP2016159352 2016-08-15
JP2016159352 2016-08-15
PCT/JP2016/088765 WO2017111174A1 (ja) 2015-12-25 2016-12-26 積層体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021095082A Division JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Publications (2)

Publication Number Publication Date
JPWO2017111174A1 JPWO2017111174A1 (ja) 2018-10-18
JP6976858B2 true JP6976858B2 (ja) 2021-12-08

Family

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Family Applications (2)

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JP2017558338A Active JP6976858B2 (ja) 2015-12-25 2016-12-26 積層体
JP2021095082A Withdrawn JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Family Applications After (1)

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JP2021095082A Withdrawn JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Country Status (6)

Country Link
US (1) US11189737B2 (enExample)
JP (2) JP6976858B2 (enExample)
KR (1) KR102382656B1 (enExample)
CN (1) CN108475702B (enExample)
TW (1) TWI795349B (enExample)
WO (1) WO2017111174A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102402945B1 (ko) 2017-08-31 2022-05-30 마이크론 테크놀로지, 인크 금속 산화물 반도체 디바이스의 접촉을 위한 반도체 디바이스, 트랜지스터, 및 관련된 방법
KR102396806B1 (ko) 2017-08-31 2022-05-12 마이크론 테크놀로지, 인크 반도체 장치, 하이브리드 트랜지스터 및 관련 방법
JP6802818B2 (ja) * 2018-03-06 2020-12-23 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
WO2020017330A1 (ja) * 2018-07-17 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7093329B2 (ja) * 2019-09-02 2022-06-29 信越化学工業株式会社 積層構造体、半導体装置及び半導体システム
CN110634959B (zh) * 2019-09-20 2021-01-08 山东大学 一种基于igzo肖特基二极管动态调控超材料的方法
CN110890280B (zh) * 2019-11-27 2024-02-06 山东大学 一种利用钯/钯氧化物双层肖特基电极制备氧化物半导体肖特基二极管的方法
CN111129166B (zh) * 2019-12-13 2023-02-07 合肥中科微电子创新中心有限公司 氧化镓基半导体结构及其制备方法
CN111081765B (zh) * 2019-12-31 2021-06-29 山东大学 一种基于铟铝锌氧化物的肖特基二极管及其制备方法
CN111081788B (zh) * 2019-12-31 2021-06-29 山东大学 一种底部为肖特基接触的铟铝锌氧化物二极管及其制备方法
JPWO2021157719A1 (enExample) * 2020-02-07 2021-08-12
TW202147529A (zh) * 2020-02-07 2021-12-16 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件及半導體裝置
JP7500293B2 (ja) * 2020-06-12 2024-06-17 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法
WO2022210732A1 (ja) * 2021-03-30 2022-10-06 出光興産株式会社 光電変換素子および光電変換素子の製造方法
KR20240041395A (ko) * 2022-09-22 2024-04-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2024162270A1 (ja) * 2023-01-31 2024-08-08 日亜化学工業株式会社 ダイオード、これを用いた整流回路、及び受電レクテナ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
KR100348269B1 (ko) * 2000-03-22 2002-08-09 엘지전자 주식회사 루데니움 산화물을 이용한 쇼트키 콘택 방법
KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
TWI446626B (zh) * 2010-05-05 2014-07-21 Yageo Corp 寬頻行動通訊天線
JP2013534726A (ja) * 2010-06-24 2013-09-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機電子装置における電極を改質する方法
JP5449094B2 (ja) * 2010-09-07 2014-03-19 株式会社東芝 半導体装置
JP2013102081A (ja) 2011-11-09 2013-05-23 Tamura Seisakusho Co Ltd ショットキーバリアダイオード
JP6283364B2 (ja) 2013-08-19 2018-02-21 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
JPWO2015025499A1 (ja) 2013-08-19 2017-03-02 出光興産株式会社 酸化物半導体基板及びショットキーバリアダイオード
JP2015109315A (ja) * 2013-12-03 2015-06-11 出光興産株式会社 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置
JP6135487B2 (ja) * 2013-12-09 2017-05-31 富士通株式会社 半導体装置及び半導体装置の製造方法
JP6149786B2 (ja) 2014-04-11 2017-06-21 豊田合成株式会社 半導体装置および半導体装置の製造方法
EP2942804B1 (en) * 2014-05-08 2017-07-12 Flosfia Inc. Crystalline multilayer structure and semiconductor device
KR102531224B1 (ko) * 2015-12-25 2023-05-10 이데미쓰 고산 가부시키가이샤 적층체
JP6796086B2 (ja) * 2016-02-05 2020-12-02 株式会社半導体エネルギー研究所 半導体装置
US10804362B2 (en) * 2016-08-31 2020-10-13 Flosfia Inc. Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system
WO2018128103A1 (ja) * 2017-01-05 2018-07-12 パナソニック株式会社 半導体リレー
TWI762467B (zh) * 2017-02-22 2022-05-01 晶元光電股份有限公司 氮化物半導體磊晶疊層結構及其功率元件

Also Published As

Publication number Publication date
CN108475702A (zh) 2018-08-31
US11189737B2 (en) 2021-11-30
US20200266304A1 (en) 2020-08-20
JP2021141337A (ja) 2021-09-16
TW201737485A (zh) 2017-10-16
KR20180099655A (ko) 2018-09-05
WO2017111174A1 (ja) 2017-06-29
JPWO2017111174A1 (ja) 2018-10-18
KR102382656B1 (ko) 2022-04-04
TWI795349B (zh) 2023-03-11
CN108475702B (zh) 2021-11-23

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