TWI662379B - 移除離子植入抗蝕劑之非氧化強酸類之用途 - Google Patents

移除離子植入抗蝕劑之非氧化強酸類之用途 Download PDF

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Publication number
TWI662379B
TWI662379B TW103144470A TW103144470A TWI662379B TW I662379 B TWI662379 B TW I662379B TW 103144470 A TW103144470 A TW 103144470A TW 103144470 A TW103144470 A TW 103144470A TW I662379 B TWI662379 B TW I662379B
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TW
Taiwan
Prior art keywords
acid
composition
resist
microelectronic device
hcl
Prior art date
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TW103144470A
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English (en)
Chinese (zh)
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TW201546577A (zh
Inventor
Steven Bilodeau
史蒂芬 碧蘿
Emanuel I. Cooper
艾曼紐 庫珀
Jaeseok Lee
李在錫
WonLae KIM
金元來
Jeffrey A. Barnes
傑弗瑞 巴恩斯
Original Assignee
Entegris, Inc.
美商恩特葛瑞斯股份有限公司
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Application filed by Entegris, Inc., 美商恩特葛瑞斯股份有限公司 filed Critical Entegris, Inc.
Publication of TW201546577A publication Critical patent/TW201546577A/zh
Application granted granted Critical
Publication of TWI662379B publication Critical patent/TWI662379B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
TW103144470A 2013-12-20 2014-12-19 移除離子植入抗蝕劑之非氧化強酸類之用途 TWI662379B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361919177P 2013-12-20 2013-12-20
US61/919,177 2013-12-20
US201462045946P 2014-09-04 2014-09-04
US62/045,946 2014-09-04
US201462046495P 2014-09-05 2014-09-05
US62/046,495 2014-09-05

Publications (2)

Publication Number Publication Date
TW201546577A TW201546577A (zh) 2015-12-16
TWI662379B true TWI662379B (zh) 2019-06-11

Family

ID=53403749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103144470A TWI662379B (zh) 2013-12-20 2014-12-19 移除離子植入抗蝕劑之非氧化強酸類之用途

Country Status (8)

Country Link
US (2) US20160322232A1 (enExample)
EP (1) EP3084809A4 (enExample)
JP (1) JP6776125B2 (enExample)
KR (1) KR102352475B1 (enExample)
CN (1) CN105960699B (enExample)
SG (2) SG11201605003WA (enExample)
TW (1) TWI662379B (enExample)
WO (1) WO2015095726A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
TWI803551B (zh) * 2017-12-27 2023-06-01 日商東京應化工業股份有限公司 去除基板上之有機系硬化膜之方法，及酸性洗淨液
JP7150433B2 (ja) * 2017-12-28 2022-10-11 東京応化工業株式会社 リワーク方法、及び酸性洗浄液
KR102069345B1 (ko) * 2018-03-06 2020-01-22 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
WO2020017283A1 (ja) * 2018-07-20 2020-01-23 富士フイルム株式会社 処理液および処理方法
CN114080571B (zh) 2019-07-11 2025-04-04 默克专利股份有限公司 光致抗蚀剂去除剂组合物

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