JP6776125B2 - イオン注入レジストの除去のための非酸化性の強酸の使用 - Google Patents
イオン注入レジストの除去のための非酸化性の強酸の使用 Download PDFInfo
- Publication number
- JP6776125B2 JP6776125B2 JP2016560865A JP2016560865A JP6776125B2 JP 6776125 B2 JP6776125 B2 JP 6776125B2 JP 2016560865 A JP2016560865 A JP 2016560865A JP 2016560865 A JP2016560865 A JP 2016560865A JP 6776125 B2 JP6776125 B2 JP 6776125B2
- Authority
- JP
- Japan
- Prior art keywords
- acid
- composition
- resist
- microelectronic device
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361919177P | 2013-12-20 | 2013-12-20 | |
| US61/919,177 | 2013-12-20 | ||
| US201462045946P | 2014-09-04 | 2014-09-04 | |
| US62/045,946 | 2014-09-04 | ||
| US201462046495P | 2014-09-05 | 2014-09-05 | |
| US62/046,495 | 2014-09-05 | ||
| PCT/US2014/071540 WO2015095726A1 (en) | 2013-12-20 | 2014-12-19 | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017508187A JP2017508187A (ja) | 2017-03-23 |
| JP2017508187A5 JP2017508187A5 (enExample) | 2018-05-24 |
| JP6776125B2 true JP6776125B2 (ja) | 2020-10-28 |
Family
ID=53403749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016560865A Expired - Fee Related JP6776125B2 (ja) | 2013-12-20 | 2014-12-19 | イオン注入レジストの除去のための非酸化性の強酸の使用 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20160322232A1 (enExample) |
| EP (1) | EP3084809A4 (enExample) |
| JP (1) | JP6776125B2 (enExample) |
| KR (1) | KR102352475B1 (enExample) |
| CN (1) | CN105960699B (enExample) |
| SG (2) | SG11201605003WA (enExample) |
| TW (1) | TWI662379B (enExample) |
| WO (1) | WO2015095726A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| WO2015116818A1 (en) | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| TWI803551B (zh) * | 2017-12-27 | 2023-06-01 | 日商東京應化工業股份有限公司 | 去除基板上之有機系硬化膜之方法，及酸性洗淨液 |
| JP7150433B2 (ja) * | 2017-12-28 | 2022-10-11 | 東京応化工業株式会社 | リワーク方法、及び酸性洗浄液 |
| KR102069345B1 (ko) * | 2018-03-06 | 2020-01-22 | 에스케이씨 주식회사 | 반도체 공정용 조성물 및 반도체 공정 |
| WO2020017283A1 (ja) * | 2018-07-20 | 2020-01-23 | 富士フイルム株式会社 | 処理液および処理方法 |
| CN114080571B (zh) | 2019-07-11 | 2025-04-04 | 默克专利股份有限公司 | 光致抗蚀剂去除剂组合物 |
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2014
- 2014-12-19 WO PCT/US2014/071540 patent/WO2015095726A1/en not_active Ceased
- 2014-12-19 CN CN201480073682.7A patent/CN105960699B/zh not_active Expired - Fee Related
- 2014-12-19 SG SG11201605003WA patent/SG11201605003WA/en unknown
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- 2014-12-19 JP JP2016560865A patent/JP6776125B2/ja not_active Expired - Fee Related
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- 2014-12-19 US US15/105,833 patent/US20160322232A1/en not_active Abandoned
- 2014-12-19 KR KR1020167019206A patent/KR102352475B1/ko active Active
- 2014-12-19 EP EP14873036.9A patent/EP3084809A4/en not_active Withdrawn
-
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2015095726A1 (en) | 2015-06-25 |
| US20160322232A1 (en) | 2016-11-03 |
| SG11201605003WA (en) | 2016-07-28 |
| JP2017508187A (ja) | 2017-03-23 |
| EP3084809A4 (en) | 2017-08-23 |
| TW201546577A (zh) | 2015-12-16 |
| KR102352475B1 (ko) | 2022-01-18 |
| TWI662379B (zh) | 2019-06-11 |
| CN105960699A (zh) | 2016-09-21 |
| SG10201805234YA (en) | 2018-08-30 |
| US10347504B2 (en) | 2019-07-09 |
| CN105960699B (zh) | 2019-11-01 |
| US20180240680A1 (en) | 2018-08-23 |
| EP3084809A1 (en) | 2016-10-26 |
| KR20160098462A (ko) | 2016-08-18 |
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