JP2017508187A5 - - Google Patents

Download PDF

Info

Publication number
JP2017508187A5
JP2017508187A5 JP2016560865A JP2016560865A JP2017508187A5 JP 2017508187 A5 JP2017508187 A5 JP 2017508187A5 JP 2016560865 A JP2016560865 A JP 2016560865A JP 2016560865 A JP2016560865 A JP 2016560865A JP 2017508187 A5 JP2017508187 A5 JP 2017508187A5
Authority
JP
Japan
Prior art keywords
acid
composition
fluoride
microelectronic device
sulfone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016560865A
Other languages
English (en)
Japanese (ja)
Other versions
JP6776125B2 (ja
JP2017508187A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/071540 external-priority patent/WO2015095726A1/en
Publication of JP2017508187A publication Critical patent/JP2017508187A/ja
Publication of JP2017508187A5 publication Critical patent/JP2017508187A5/ja
Application granted granted Critical
Publication of JP6776125B2 publication Critical patent/JP6776125B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016560865A 2013-12-20 2014-12-19 イオン注入レジストの除去のための非酸化性の強酸の使用 Expired - Fee Related JP6776125B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361919177P 2013-12-20 2013-12-20
US61/919,177 2013-12-20
US201462045946P 2014-09-04 2014-09-04
US62/045,946 2014-09-04
US201462046495P 2014-09-05 2014-09-05
US62/046,495 2014-09-05
PCT/US2014/071540 WO2015095726A1 (en) 2013-12-20 2014-12-19 Use of non-oxidizing strong acids for the removal of ion-implanted resist

Publications (3)

Publication Number Publication Date
JP2017508187A JP2017508187A (ja) 2017-03-23
JP2017508187A5 true JP2017508187A5 (enExample) 2018-05-24
JP6776125B2 JP6776125B2 (ja) 2020-10-28

Family

ID=53403749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016560865A Expired - Fee Related JP6776125B2 (ja) 2013-12-20 2014-12-19 イオン注入レジストの除去のための非酸化性の強酸の使用

Country Status (8)

Country Link
US (2) US20160322232A1 (enExample)
EP (1) EP3084809A4 (enExample)
JP (1) JP6776125B2 (enExample)
KR (1) KR102352475B1 (enExample)
CN (1) CN105960699B (enExample)
SG (2) SG10201805234YA (enExample)
TW (1) TWI662379B (enExample)
WO (1) WO2015095726A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
EP3099839A4 (en) 2014-01-29 2017-10-11 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
TWI803551B (zh) * 2017-12-27 2023-06-01 日商東京應化工業股份有限公司 去除基板上之有機系硬化膜之方法，及酸性洗淨液
JP7150433B2 (ja) * 2017-12-28 2022-10-11 東京応化工業株式会社 リワーク方法、及び酸性洗浄液
KR102069345B1 (ko) * 2018-03-06 2020-01-22 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
WO2020017283A1 (ja) * 2018-07-20 2020-01-23 富士フイルム株式会社 処理液および処理方法
EP3997521B1 (en) 2019-07-11 2023-08-30 Merck Patent GmbH Photoresist remover compositions

Family Cites Families (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651596A (en) * 1952-04-04 1953-09-08 Standard Oil Co Refining of distillates with sulfuric acid and so2cl2
US4064284A (en) * 1975-07-22 1977-12-20 Cpc International Inc. Process for the debranning of wheat
US4187191A (en) * 1978-07-26 1980-02-05 General Motors Corporation Photoresist stripper with dodecylsulfonic acid and chlorinated solvents
US5008515A (en) * 1990-05-10 1991-04-16 Mccormack William C Body temperature responsive transport warming blanket
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5429764A (en) * 1993-08-24 1995-07-04 Eftichios Van Vlahakis Liquid drain opener compositions based on sulfuric acid
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
US5702075A (en) 1996-01-31 1997-12-30 David Lehrman Automatically collapsible support for an electrical cord for use with an ironing board
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5993685A (en) 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
JP3076270B2 (ja) 1997-06-24 2000-08-14 キヤノン販売株式会社 レジスト膜の除去方法及び半導体装置の製造方法
US6346741B1 (en) 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US5976928A (en) 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6211126B1 (en) 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
CA2332390A1 (en) 1998-05-18 1999-11-25 Advanced Technology Materials, Inc. Stripping compositions for semiconductor substrates
US6875733B1 (en) 1998-10-14 2005-04-05 Advanced Technology Materials, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6777380B2 (en) * 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6627587B2 (en) 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6802983B2 (en) 2001-09-17 2004-10-12 Advanced Technology Materials, Inc. Preparation of high performance silica slurry using a centrifuge
US7119418B2 (en) 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7030168B2 (en) 2001-12-31 2006-04-18 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7557073B2 (en) 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
EP1536291A4 (en) * 2002-08-22 2008-08-06 Daikin Ind Ltd Removing solution
US7223352B2 (en) 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US20060019850A1 (en) 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US7011716B2 (en) 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US8236485B2 (en) 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
US6735978B1 (en) 2003-02-11 2004-05-18 Advanced Technology Materials, Inc. Treatment of supercritical fluid utilized in semiconductor manufacturing applications
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
WO2004101222A2 (en) 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US7335239B2 (en) 2003-11-17 2008-02-26 Advanced Technology Materials, Inc. Chemical mechanical planarization pad
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
CA2590325A1 (en) 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method
US20050145311A1 (en) 2003-12-30 2005-07-07 Walker Elizabeth L. Method for monitoring surface treatment of copper containing devices
US7553803B2 (en) 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20050227482A1 (en) 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
US20060063687A1 (en) 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20060148666A1 (en) 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
EP1875493A2 (en) * 2005-04-04 2008-01-09 MALLINCKRODT BAKER, Inc. Composition for cleaning ion implanted photoresist in front end of line applications
WO2006110645A2 (en) 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
JP2008537343A (ja) 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
WO2006113573A1 (en) 2005-04-15 2006-10-26 Advanced Technology Materials, Inc. Apparatus and method for supercritical fluid removal or deposition processes
EP1880410A2 (en) * 2005-05-13 2008-01-23 Sachem, Inc. Selective wet etching of oxides
JP2008543060A (ja) 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
US20090215269A1 (en) 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
CN101233456B (zh) 2005-06-07 2013-01-02 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
US20090212021A1 (en) 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
TW200710205A (en) 2005-06-16 2007-03-16 Advanced Tech Materials Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
WO2007019342A2 (en) 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2007027522A2 (en) 2005-08-29 2007-03-08 Advanced Technology Materials, Inc. Composition and method for removing thick film photoresist
WO2007044446A1 (en) 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Oxidizing aqueous cleaner for the removal of post-etch residues
CN101496146A (zh) 2005-10-05 2009-07-29 高级技术材料公司 选择性蚀刻栅极隔片氧化物材料的组合物和方法
JP2009516360A (ja) 2005-10-13 2009-04-16 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属適合フォトレジスト及び／又は犠牲反射防止コーティング除去組成物
WO2007120259A2 (en) 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
CN101356629B (zh) 2005-11-09 2012-06-06 高级技术材料公司 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法
TW200734448A (en) 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
JP4839968B2 (ja) * 2006-06-08 2011-12-21 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
US20080076688A1 (en) 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
WO2008036823A2 (en) 2006-09-21 2008-03-27 Advanced Technology Materials, Inc. Uric acid additive for cleaning formulations
EP2082024A4 (en) 2006-09-25 2010-11-17 Advanced Tech Materials COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE
JP5017985B2 (ja) * 2006-09-25 2012-09-05 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
KR101449774B1 (ko) 2006-12-21 2014-10-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭 후 잔류물의 제거를 위한 액체 세정제
WO2008080096A2 (en) 2006-12-21 2008-07-03 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
TW200916564A (en) 2007-01-31 2009-04-16 Advanced Tech Materials Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
TWI516573B (zh) 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除ＴｉＳｉＮ之組成物及方法
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
JP2010524208A (ja) * 2007-03-31 2010-07-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド ウエハ再生のために材料を剥離する方法
WO2008157345A2 (en) 2007-06-13 2008-12-24 Advanced Technology Materials, Inc. Wafer reclamation compositions and methods
TW200916571A (en) 2007-08-02 2009-04-16 Advanced Tech Materials Non-fluoride containing composition for the removal of residue from a microelectronic device
EP2190967A4 (en) 2007-08-20 2010-10-13 Advanced Tech Materials COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTOLACK
CN101785087A (zh) * 2007-08-22 2010-07-21 大金工业株式会社 半导体干式工艺后的残渣除去液和使用该残渣除去液的残渣除去方法
EP2227319A2 (en) 2007-11-14 2010-09-15 Advanced Technology Materials, Inc. Solvent-free synthesis of soluble nanocrystals
TW200934865A (en) 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
JP2011517328A (ja) 2008-03-07 2011-06-02 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 非選択性酸化物エッチング湿式洗浄組成物および使用方法
US20090253072A1 (en) 2008-04-01 2009-10-08 Petruska Melissa A Nanoparticle reversible contrast enhancement material and method
US8026200B2 (en) 2008-05-01 2011-09-27 Advanced Technology Materials, Inc. Low pH mixtures for the removal of high density implanted resist
CN102216854A (zh) 2008-08-04 2011-10-12 高级技术材料公司 环境友好型聚合物剥离组合物
WO2010039936A2 (en) 2008-10-02 2010-04-08 Advanced Technology Materials, Inc. Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
KR101752684B1 (ko) 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
SG2014005136A (en) 2009-01-28 2014-03-28 Advanced Tech Materials Lithographic tool in situ clean formulations
WO2010086745A1 (en) 2009-02-02 2010-08-05 Atmi Taiwan Co., Ltd. Method of etching lanthanum-containing oxide layers
WO2010091045A2 (en) 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8367555B2 (en) 2009-12-11 2013-02-05 International Business Machines Corporation Removal of masking material
SG182789A1 (en) 2010-01-29 2012-09-27 Advanced Tech Materials Cleaning agent for semiconductor provided with metal wiring
JP5858597B2 (ja) 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド タングステン配線半導体用洗浄剤
EP2558605A1 (en) 2010-04-15 2013-02-20 Advanced Technology Materials, Inc. Method for recycling of obsolete printed circuit boards
JP2012021151A (ja) 2010-06-16 2012-02-02 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
CN103003923A (zh) 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
JP2012036750A (ja) 2010-08-04 2012-02-23 Panasonic Corp 圧縮機
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
EP2606158A4 (en) 2010-08-20 2017-04-26 Entegris Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
CN103081072A (zh) 2010-08-27 2013-05-01 高级技术材料公司 预防干燥期间高纵横比结构崩塌的方法
US9831088B2 (en) 2010-10-06 2017-11-28 Entegris, Inc. Composition and process for selectively etching metal nitrides
WO2012051380A2 (en) 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP2012186470A (ja) 2011-02-18 2012-09-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
JP2012251026A (ja) 2011-05-31 2012-12-20 Sanyo Chem Ind Ltd 半導体用洗浄剤
TW201311869A (zh) 2011-06-16 2013-03-16 尖端科技材料公司 選擇性蝕刻氮化矽之組成物及方法
CN103620861B (zh) 2011-06-21 2017-02-15 恩特格里斯公司 从锂离子电池回收锂钴氧化物的方法
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
CN105869997A (zh) 2011-10-21 2016-08-17 安格斯公司 无胺cmp后组合物及其使用方法
US8618036B2 (en) 2011-11-14 2013-12-31 International Business Machines Corporation Aqueous cerium-containing solution having an extended bath lifetime for removing mask material
KR20140139131A (ko) 2011-12-15 2014-12-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 폐 전기 및 전자 장비의 재활용 동안 땜납 금속의 스트리핑을 위한 장치 및 방법
SG10201605172RA (en) 2011-12-28 2016-08-30 Entegris Inc Compositions and methods for selectively etching titanium nitride
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
TWI592468B (zh) 2012-03-12 2017-07-21 恩特葛瑞斯股份有限公司 選擇性移除灰化旋塗玻璃之方法
WO2013138278A1 (en) 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
SG11201405737VA (en) 2012-03-18 2014-10-30 Entegris Inc Post-cmp formulation having improved barrier layer compatibility and cleaning performance
WO2013152260A1 (en) 2012-04-06 2013-10-10 Advanced Technology Materials, Inc. Removal of lead from solid materials
US20130295712A1 (en) 2012-05-03 2013-11-07 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
KR102100254B1 (ko) 2012-05-11 2020-04-13 엔테그리스, 아이엔씨. 규소화물 제작 중의 NiPt 습식 에칭을 위한 배합물
TW201404877A (zh) 2012-05-18 2014-02-01 尖端科技材料公司 用於改善有機殘餘物移除之具有低銅蝕刻速率之清潔水溶液
WO2013173738A1 (en) 2012-05-18 2013-11-21 Advanced Technology Materials, Inc. Composition and process for stripping photoresist from a surface including titanium nitride
US8709277B2 (en) * 2012-09-10 2014-04-29 Fujifilm Corporation Etching composition
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
CN103414963A (zh) 2013-08-01 2013-11-27 浙江生辉照明有限公司 一种音箱led灯
SG10201706443QA (en) 2013-03-04 2017-09-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
EP2778158A1 (en) 2013-03-14 2014-09-17 Advanced Technology Materials, Inc. Sulfolane mixtures as ambient aprotic polar solvents
TW201500542A (zh) 2013-04-22 2015-01-01 先進科技材料公司 銅清洗及保護配方
US20160122696A1 (en) 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
EP3004287B1 (en) 2013-06-06 2021-08-18 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
BR112016004272B8 (pt) 2013-08-30 2023-01-03 Shell Int Research Processo para a conversão catalítica de uma carga de alimentação contendo sacarídeo em um reator
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
WO2015116679A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
EP3099839A4 (en) 2014-01-29 2017-10-11 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US20160362804A1 (en) 2014-02-25 2016-12-15 Entegris, Inc. Wet based formulations for the selective removal of noble metals

Similar Documents

Publication Publication Date Title
JP6892418B2 (ja) 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金に対してシリコンを選択的に除去するためのエッチング液
KR102285003B1 (ko) TiN 하드 마스크 제거 및 에칭 잔류물 세정용 조성물
CN109423291B (zh) 在制造半导体器件过程中从硅-锗/硅叠层中选择性地去除硅-锗合金的蚀刻溶液
KR102443370B1 (ko) 실리콘 질화막 식각액 조성물
US10934484B2 (en) Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
JP6963684B2 (ja) 半導体装置の製造においてケイ素−ゲルマニウム／ケイ素積層体からケイ素およびケイ素−ゲルマニウム合金を同時に除去するためのエッチング溶液
KR101746879B1 (ko) 고급 반도체 적용을 위한 이온 주입 후 스트리퍼
US10347504B2 (en) Use of non-oxidizing strong acids for the removal of ion-implanted resist
SG11202113308RA (en) Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device
WO2021004759A1 (en) Composition, its use and a process for selectively etching silicon-germanium material
JP2014225633A5 (enExample)
JP2019172844A5 (enExample)
KR101344541B1 (ko) 실리콘 산화막에 대한 선택적 에칭액 조성물
KR20150088356A (ko) 실리콘계 화합물막 식각액 조성물
CN110003911A (zh) 具有针对两种晶格方向低选择比（Si（100）/Si（111））及低二氧化硅蚀刻率的硅蚀刻剂组合物
KR102245660B1 (ko) 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 및 그 조성물을 사용하는 액정표시장치용 어레이 기판의 제조방법
JP2011516620A5 (enExample)
WO2015084984A3 (en) Method for the preparation of swellable sol-gel compositions
KR20100110977A (ko) 포토레지스트 박리용 조성물 및 이를 이용한 박리방법
TWI917426B (zh) 用於選擇性蝕刻包含矽鍺材料的層的組成物、其用途及方法、及製造半導體元件之方法
JP5017985B2 (ja) レジスト除去用組成物及びレジストの除去方法
JP5814112B2 (ja) 洗浄液、及び防食剤
KR102282702B1 (ko) 식각 조성물, 식각 방법 및 이를 이용한 반도체 소자의 제조 방법
JP2020021764A (ja) 半導体基板の処理方法