TWI661580B - 發光裝置 - Google Patents

發光裝置 Download PDF

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Publication number
TWI661580B
TWI661580B TW104114798A TW104114798A TWI661580B TW I661580 B TWI661580 B TW I661580B TW 104114798 A TW104114798 A TW 104114798A TW 104114798 A TW104114798 A TW 104114798A TW I661580 B TWI661580 B TW I661580B
Authority
TW
Taiwan
Prior art keywords
light
emitting device
main surface
terminal
base body
Prior art date
Application number
TW104114798A
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English (en)
Chinese (zh)
Other versions
TW201547062A (zh
Inventor
中林拓也
堀彰良
Original Assignee
日商日亞化學工業股份有限公司
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Publication of TW201547062A publication Critical patent/TW201547062A/zh
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Publication of TWI661580B publication Critical patent/TWI661580B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
TW104114798A 2014-05-21 2015-05-08 發光裝置 TWI661580B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-105728 2014-05-21
JP2014105728 2014-05-21
JP2015084046A JP6661890B2 (ja) 2014-05-21 2015-04-16 発光装置
JP2015-084046 2015-04-16

Publications (2)

Publication Number Publication Date
TW201547062A TW201547062A (zh) 2015-12-16
TWI661580B true TWI661580B (zh) 2019-06-01

Family

ID=53181193

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104114798A TWI661580B (zh) 2014-05-21 2015-05-08 發光裝置
TW108112519A TWI783143B (zh) 2014-05-21 2015-05-08 發光裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108112519A TWI783143B (zh) 2014-05-21 2015-05-08 發光裝置

Country Status (7)

Country Link
US (9) US9406852B2 (enExample)
EP (4) EP3454385B1 (enExample)
JP (2) JP6661890B2 (enExample)
KR (2) KR102110554B1 (enExample)
CN (2) CN111883630B (enExample)
RU (3) RU2690165C2 (enExample)
TW (2) TWI661580B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6661890B2 (ja) 2014-05-21 2020-03-11 日亜化学工業株式会社 発光装置
JP6484982B2 (ja) * 2014-09-30 2019-03-20 日亜化学工業株式会社 発光装置の製造方法
TW201526315A (zh) * 2015-02-17 2015-07-01 黃秀璋 覆晶式發光二極體及其製造方法
CN107438899B (zh) * 2015-03-31 2021-04-30 科锐Led公司 具有包封的发光二极管和方法
US12364074B2 (en) 2015-03-31 2025-07-15 Creeled, Inc. Light emitting diodes and methods
KR102373329B1 (ko) * 2015-04-30 2022-03-11 삼성디스플레이 주식회사 유기 발광 표시 장치
JP1547626S (enExample) * 2015-08-19 2016-04-11
JP1554165S (enExample) * 2016-01-13 2016-07-19
JP6693369B2 (ja) 2016-09-21 2020-05-13 豊田合成株式会社 光源および発光装置の実装方法
JP6834762B2 (ja) * 2016-09-29 2021-02-24 豊田合成株式会社 発光装置及び電子部品
US10199552B2 (en) * 2016-09-29 2019-02-05 Toyoda Gosei Co., Ltd. Light emitting device and electronic component
JP6565895B2 (ja) * 2016-12-26 2019-08-28 日亜化学工業株式会社 半導体装置用パッケージ及び半導体装置
JP6699580B2 (ja) * 2017-02-09 2020-05-27 日亜化学工業株式会社 発光装置
JP6432639B2 (ja) * 2017-04-28 2018-12-05 日亜化学工業株式会社 発光装置
US11686896B2 (en) 2017-10-27 2023-06-27 Radiant Opto-Electronics(Suzhou) Co., Ltd. LED light source module
KR102481413B1 (ko) * 2017-10-27 2022-12-26 라디안트 옵토-엘렉트로닉스(쑤저우) 컴퍼니 리미티드 Led 광원 모듈 및 이의 제조방법
JP7098930B2 (ja) * 2017-12-28 2022-07-12 住友大阪セメント株式会社 光変調器及びそれを用いた光送信装置
USD889422S1 (en) * 2018-04-13 2020-07-07 Seoul Semiconductor Co., Ltd. Light emitting diode package
USD919582S1 (en) * 2018-04-13 2021-05-18 Seoul Semiconductor Co., Ltd. Light emitting diode package
USD892067S1 (en) * 2018-04-13 2020-08-04 Seoul Semiconductor Co., Ltd. Light emitting diode package
USD889421S1 (en) * 2018-04-13 2020-07-07 Seoul Semiconductor Co., Ltd. Light emitting diode package
USD892068S1 (en) * 2018-04-13 2020-08-04 Seoul Semiconductor Co., Ltd. Light emitting diode package
JP7046230B2 (ja) 2018-05-31 2022-04-01 ニッサン ノース アメリカ，インク モジュール内メディアアセンブリ
CN111527342A (zh) * 2018-06-26 2020-08-11 株式会社基尔特规划办公室 照明装置
JP7161100B2 (ja) * 2018-09-25 2022-10-26 日亜化学工業株式会社 発光装置及びその製造方法
USD894853S1 (en) * 2018-10-12 2020-09-01 Seoul Semiconductor Co., Ltd. Light emitting diode package
USD881142S1 (en) * 2018-10-12 2020-04-14 Seoul Semiconductor Co., Ltd. Light emitting diode package
USD881143S1 (en) * 2018-10-12 2020-04-14 Seoul Semiconductor Co., Ltd. Light emitting diode package
CN111430528B (zh) * 2019-01-10 2021-11-05 深圳市聚飞光电股份有限公司 一种发光装置及其显示装置
CN110112278A (zh) * 2019-04-25 2019-08-09 深圳市聚飞光电股份有限公司 一种安装基板及其发光装置
JP7307874B2 (ja) 2019-04-26 2023-07-13 日亜化学工業株式会社 発光装置及び発光モジュール
RU202751U1 (ru) * 2020-08-11 2021-03-04 Постовой Денис Александрович Диодная сборка
CN112802945A (zh) * 2021-02-04 2021-05-14 梅州市展至电子科技有限公司 一种半导体陶瓷封装基板及其封装工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942770A (en) * 1997-04-14 1999-08-24 Rohm, Co., Ltd. Light-emitting diode chip component and a light-emitting device
US20110051039A1 (en) * 2009-09-01 2011-03-03 Kazuhiro Okamoto Light-emitting device, planar light source including the light-emitting device, and liquid crystal display device including the planar light source
TW201336118A (zh) * 2011-12-23 2013-09-01 克里股份有限公司 改善的光發射裝置和方法
WO2014016165A1 (de) * 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3227295B2 (ja) * 1993-12-28 2001-11-12 松下電工株式会社 発光ダイオードの製造方法
US6093940A (en) 1997-04-14 2000-07-25 Rohm Co., Ltd. Light-emitting diode chip component and a light-emitting device
JP2000156528A (ja) * 1998-11-19 2000-06-06 Sharp Corp 発光素子
JP2001024312A (ja) * 1999-07-13 2001-01-26 Taiyo Yuden Co Ltd 電子装置の製造方法及び電子装置並びに樹脂充填方法
JP2001345485A (ja) 2000-06-02 2001-12-14 Toyoda Gosei Co Ltd 発光装置
JP2001352105A (ja) 2000-06-08 2001-12-21 Stanley Electric Co Ltd 表面実装型発光素子
JP2002237673A (ja) * 2001-02-08 2002-08-23 Murata Mfg Co Ltd 回路基板装置
KR20050097946A (ko) * 2003-01-20 2005-10-10 샤프 가부시키가이샤 광센서 필터용의 투명 수지 조성물, 광센서 및 그 제조방법
US7000052B2 (en) * 2003-02-24 2006-02-14 Cisco Technology, Inc. System and method for configuring and deploying input/output cards in a communications environment
JP2006093565A (ja) * 2004-09-27 2006-04-06 Kyocera Corp 発光素子用配線基板ならびに発光装置およびその製造方法
TW200637033A (en) 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
WO2006112039A1 (ja) * 2005-04-01 2006-10-26 Matsushita Electric Industrial Co., Ltd. 表面実装型光半導体装置およびその製造方法
TW200711190A (en) * 2005-08-17 2007-03-16 Matsushita Electric Industrial Co Ltd Surface mounted semiconductor device and method for manufacturing same
US20070187701A1 (en) * 2006-02-16 2007-08-16 Goon Wooi K Compact multi-LED light source with improved heat dissipation
JPWO2007099796A1 (ja) * 2006-02-22 2009-07-16 日本板硝子株式会社 発光ユニット、照明装置及び画像読取装置
CN100530721C (zh) * 2006-08-24 2009-08-19 亿光电子工业股份有限公司 适用于超薄型led封装的基板及其封装方法
TW200814362A (en) * 2006-09-13 2008-03-16 Bright Led Electronics Corp Light-emitting diode device with high heat dissipation property
JP2010508652A (ja) * 2006-10-31 2010-03-18 ティーアイアール テクノロジー エルピー 照明デバイスパッケージ
US20100025722A1 (en) 2006-11-14 2010-02-04 Harison Toshiba Lighting Corp. Light emitting device, its manufacturing method and its mounted substrate
JP2008147605A (ja) * 2006-11-14 2008-06-26 Harison Toshiba Lighting Corp 発光装置及びその製造方法並びに実装基板
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP2009188005A (ja) 2008-02-04 2009-08-20 Panasonic Corp 表面実装型半導体装置
JP2009194213A (ja) * 2008-02-15 2009-08-27 Sanyo Electric Co Ltd 電子部品
JP5227677B2 (ja) 2008-06-23 2013-07-03 スタンレー電気株式会社 Ｌｅｄの実装構造、ｌｅｄ光源及びこれを備えたバックライト装置
TWI456784B (zh) * 2008-07-29 2014-10-11 日亞化學工業股份有限公司 發光裝置
JP2010103294A (ja) * 2008-10-23 2010-05-06 Citizen Electronics Co Ltd 発光ダイオード
JP5521325B2 (ja) 2008-12-27 2014-06-11 日亜化学工業株式会社 発光装置及びその製造方法
CN102044535B (zh) * 2009-10-26 2012-08-08 佛山市国星光电股份有限公司 一种户外显示屏用的smd led器件及其显示模组
JP5340191B2 (ja) * 2010-02-02 2013-11-13 日東電工株式会社 光半導体装置
JP5640632B2 (ja) * 2010-03-12 2014-12-17 旭硝子株式会社 発光装置
KR20110111243A (ko) * 2010-04-02 2011-10-10 아사히 가라스 가부시키가이샤 발광 소자 탑재 기판 및 이 기판을 사용한 발광 장치
JP2012028501A (ja) * 2010-07-22 2012-02-09 Toshiba Corp 発光装置
CN102376845A (zh) * 2010-08-17 2012-03-14 展晶科技(深圳)有限公司 发光二极管的封装结构
JP2012099544A (ja) * 2010-10-29 2012-05-24 Nichia Chem Ind Ltd 発光装置の製造方法
JP5693194B2 (ja) * 2010-12-14 2015-04-01 シチズン電子株式会社 発光ダイオード
US20120153311A1 (en) * 2010-12-17 2012-06-21 Intematix Corporation Low-cost solid-state based light emitting devices with photoluminescent wavelength conversion and their method of manufacture
US20120261689A1 (en) * 2011-04-13 2012-10-18 Bernd Karl Appelt Semiconductor device packages and related methods
JP5770006B2 (ja) * 2011-04-15 2015-08-26 シチズン電子株式会社 半導体発光装置
JP2013008772A (ja) * 2011-06-23 2013-01-10 Citizen Electronics Co Ltd 側面実装型ｌｅｄ
JP2013033909A (ja) * 2011-06-29 2013-02-14 Hitachi Cable Ltd 発光素子搭載用基板及びｌｅｄパッケージ
JP5937315B2 (ja) 2011-08-11 2016-06-22 シチズン電子株式会社 発光ダイオード
JP2013110199A (ja) * 2011-11-18 2013-06-06 Citizen Electronics Co Ltd Ｌｅｄ発光装置
JP5933959B2 (ja) * 2011-11-18 2016-06-15 スタンレー電気株式会社 半導体光学装置
JP5940799B2 (ja) * 2011-11-22 2016-06-29 新光電気工業株式会社 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法
CN103137825B (zh) * 2011-11-30 2016-06-01 光宝电子(广州)有限公司 发光二极管基板结构、发光二极管单元及其光源模块
JP6127468B2 (ja) 2012-11-22 2017-05-17 日亜化学工業株式会社 発光装置
US9673364B2 (en) 2013-07-19 2017-06-06 Nichia Corporation Light emitting device and method of manufacturing the same
JP6273124B2 (ja) * 2013-11-08 2018-01-31 シチズン電子株式会社 Ｌｅｄ照明装置
JP2015207754A (ja) 2013-12-13 2015-11-19 日亜化学工業株式会社 発光装置
EP3130458B1 (en) * 2014-03-18 2019-07-17 Kuraray Co., Ltd. Electronic device
DE102014103828A1 (de) * 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
JP6318844B2 (ja) * 2014-05-20 2018-05-09 日亜化学工業株式会社 発光装置
JP6661890B2 (ja) * 2014-05-21 2020-03-11 日亜化学工業株式会社 発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942770A (en) * 1997-04-14 1999-08-24 Rohm, Co., Ltd. Light-emitting diode chip component and a light-emitting device
US20110051039A1 (en) * 2009-09-01 2011-03-03 Kazuhiro Okamoto Light-emitting device, planar light source including the light-emitting device, and liquid crystal display device including the planar light source
TW201336118A (zh) * 2011-12-23 2013-09-01 克里股份有限公司 改善的光發射裝置和方法
WO2014016165A1 (de) * 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element

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