TWI654761B - 半導體裝置 - Google Patents

半導體裝置

Info

Publication number
TWI654761B
TWI654761B TW103134744A TW103134744A TWI654761B TW I654761 B TWI654761 B TW I654761B TW 103134744 A TW103134744 A TW 103134744A TW 103134744 A TW103134744 A TW 103134744A TW I654761 B TWI654761 B TW I654761B
Authority
TW
Taiwan
Prior art keywords
transistor
layer
wiring
film
oxide
Prior art date
Application number
TW103134744A
Other languages
English (en)
Chinese (zh)
Other versions
TW201517276A (zh
Inventor
山崎舜平
長塚修平
大貫達也
塩野入豊
加藤清
宮入秀和
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW201517276A publication Critical patent/TW201517276A/zh
Application granted granted Critical
Publication of TWI654761B publication Critical patent/TWI654761B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dram (AREA)
TW103134744A 2013-10-22 2014-10-06 半導體裝置 TWI654761B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2013-219679 2013-10-22
JP2013-219680 2013-10-22
JP2013219680 2013-10-22
JP2013-219683 2013-10-22
JP2013219679 2013-10-22
JP2013219683 2013-10-22

Publications (2)

Publication Number Publication Date
TW201517276A TW201517276A (zh) 2015-05-01
TWI654761B true TWI654761B (zh) 2019-03-21

Family

ID=52825399

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103134744A TWI654761B (zh) 2013-10-22 2014-10-06 半導體裝置

Country Status (5)

Country Link
US (1) US9673224B2 (enExample)
JP (8) JP6422730B2 (enExample)
KR (1) KR102244460B1 (enExample)
TW (1) TWI654761B (enExample)
WO (1) WO2015060133A1 (enExample)

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WO2021035414A1 (zh) 2019-08-23 2021-03-04 京东方科技集团股份有限公司 像素电路及驱动方法、显示基板及驱动方法、显示装置
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JP6692645B2 (ja) * 2016-01-15 2020-05-13 株式会社ジャパンディスプレイ 半導体装置
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JP6758884B2 (ja) * 2016-04-01 2020-09-23 株式会社ジャパンディスプレイ 表示装置
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JP6751613B2 (ja) 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
CN109478514A (zh) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置
JP6756560B2 (ja) * 2016-09-27 2020-09-16 株式会社ジャパンディスプレイ 表示装置
TWI852333B (zh) * 2017-12-07 2024-08-11 日商半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
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WO2019234547A1 (ja) 2018-06-08 2019-12-12 株式会社半導体エネルギー研究所 半導体装置
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CN114568038A (zh) * 2019-11-13 2022-05-31 索尼半导体解决方案公司 半导体装置、半导体装置的制造方法和摄像装置
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