JP6422730B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6422730B2 JP6422730B2 JP2014215159A JP2014215159A JP6422730B2 JP 6422730 B2 JP6422730 B2 JP 6422730B2 JP 2014215159 A JP2014215159 A JP 2014215159A JP 2014215159 A JP2014215159 A JP 2014215159A JP 6422730 B2 JP6422730 B2 JP 6422730B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- layer
- film
- oxide
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Dram (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014215159A JP6422730B2 (ja) | 2013-10-22 | 2014-10-22 | 半導体装置 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013219680 | 2013-10-22 | ||
| JP2013219679 | 2013-10-22 | ||
| JP2013219680 | 2013-10-22 | ||
| JP2013219679 | 2013-10-22 | ||
| JP2013219683 | 2013-10-22 | ||
| JP2013219683 | 2013-10-22 | ||
| JP2014215159A JP6422730B2 (ja) | 2013-10-22 | 2014-10-22 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018195770A Division JP6592163B2 (ja) | 2013-10-22 | 2018-10-17 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015109433A JP2015109433A (ja) | 2015-06-11 |
| JP2015109433A5 JP2015109433A5 (enExample) | 2017-11-30 |
| JP6422730B2 true JP6422730B2 (ja) | 2018-11-14 |
Family
ID=52825399
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014215159A Expired - Fee Related JP6422730B2 (ja) | 2013-10-22 | 2014-10-22 | 半導体装置 |
| JP2018195770A Active JP6592163B2 (ja) | 2013-10-22 | 2018-10-17 | 半導体装置 |
| JP2019169944A Active JP6870048B2 (ja) | 2013-10-22 | 2019-09-19 | 半導体装置 |
| JP2021068148A Active JP7066894B2 (ja) | 2013-10-22 | 2021-04-14 | 半導体装置 |
| JP2022073219A Active JP7305004B2 (ja) | 2013-10-22 | 2022-04-27 | 半導体装置 |
| JP2023105210A Active JP7562773B2 (ja) | 2013-10-22 | 2023-06-27 | 半導体装置 |
| JP2024165979A Active JP7714096B2 (ja) | 2013-10-22 | 2024-09-25 | 半導体装置 |
| JP2025118944A Pending JP2025148517A (ja) | 2013-10-22 | 2025-07-15 | 半導体装置 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018195770A Active JP6592163B2 (ja) | 2013-10-22 | 2018-10-17 | 半導体装置 |
| JP2019169944A Active JP6870048B2 (ja) | 2013-10-22 | 2019-09-19 | 半導体装置 |
| JP2021068148A Active JP7066894B2 (ja) | 2013-10-22 | 2021-04-14 | 半導体装置 |
| JP2022073219A Active JP7305004B2 (ja) | 2013-10-22 | 2022-04-27 | 半導体装置 |
| JP2023105210A Active JP7562773B2 (ja) | 2013-10-22 | 2023-06-27 | 半導体装置 |
| JP2024165979A Active JP7714096B2 (ja) | 2013-10-22 | 2024-09-25 | 半導体装置 |
| JP2025118944A Pending JP2025148517A (ja) | 2013-10-22 | 2025-07-15 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9673224B2 (enExample) |
| JP (8) | JP6422730B2 (enExample) |
| KR (1) | KR102244460B1 (enExample) |
| TW (1) | TWI654761B (enExample) |
| WO (1) | WO2015060133A1 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6402017B2 (ja) | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| SG11201604650SA (en) | 2013-12-26 | 2016-07-28 | Semiconductor Energy Lab | Semiconductor device |
| KR102529174B1 (ko) | 2013-12-27 | 2023-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10074576B2 (en) * | 2014-02-28 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| KR102398950B1 (ko) | 2014-05-30 | 2022-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
| US10204898B2 (en) | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2016125044A1 (en) | 2015-02-06 | 2016-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Device, manufacturing method thereof, and electronic device |
| JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| KR102582523B1 (ko) | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US10019025B2 (en) * | 2015-07-30 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2017037564A1 (en) * | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
| WO2021035414A1 (zh) | 2019-08-23 | 2021-03-04 | 京东方科技集团股份有限公司 | 像素电路及驱动方法、显示基板及驱动方法、显示装置 |
| CN105185816A (zh) * | 2015-10-15 | 2015-12-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| US11600234B2 (en) * | 2015-10-15 | 2023-03-07 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display substrate and driving method thereof |
| US11189700B2 (en) * | 2015-12-23 | 2021-11-30 | Intel Corporation | Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices |
| JP6845692B2 (ja) * | 2016-01-15 | 2021-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6692645B2 (ja) * | 2016-01-15 | 2020-05-13 | 株式会社ジャパンディスプレイ | 半導体装置 |
| WO2017137864A1 (en) * | 2016-02-12 | 2017-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9882064B2 (en) * | 2016-03-10 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and electronic device |
| JP6758884B2 (ja) * | 2016-04-01 | 2020-09-23 | 株式会社ジャパンディスプレイ | 表示装置 |
| US10008502B2 (en) * | 2016-05-04 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| KR102330605B1 (ko) * | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6751613B2 (ja) | 2016-07-15 | 2020-09-09 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102613288B1 (ko) * | 2016-07-26 | 2023-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6756560B2 (ja) * | 2016-09-27 | 2020-09-16 | 株式会社ジャパンディスプレイ | 表示装置 |
| TWI852333B (zh) * | 2017-12-07 | 2024-08-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
| US11205664B2 (en) * | 2017-12-27 | 2021-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US20210242207A1 (en) * | 2018-05-18 | 2021-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| US11495691B2 (en) | 2018-06-08 | 2022-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20210027367A (ko) * | 2018-06-29 | 2021-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US20200091156A1 (en) * | 2018-09-17 | 2020-03-19 | Intel Corporation | Two transistor memory cell using stacked thin-film transistors |
| US11018177B2 (en) * | 2019-05-29 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside illuminated global shutter image sensor |
| KR102840468B1 (ko) * | 2019-07-16 | 2025-07-29 | 삼성전자주식회사 | 반도체 장치 |
| CN112740421B (zh) | 2019-08-23 | 2024-12-24 | 京东方科技集团股份有限公司 | 显示装置及其制备方法 |
| EP4020572A4 (en) | 2019-08-23 | 2022-09-07 | BOE Technology Group Co., Ltd. | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND DRIVING SUBSTRATE |
| EP4020575A4 (en) | 2019-08-23 | 2022-12-14 | BOE Technology Group Co., Ltd. | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF |
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| EP4020449B1 (en) | 2019-08-23 | 2025-06-25 | BOE Technology Group Co., Ltd. | Display device and manufacturing method thereof |
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| EP4024466A4 (en) | 2019-08-27 | 2022-10-05 | BOE Technology Group Co., Ltd. | ELECTRONIC DEVICE SUBSTRATE AND METHOD OF MAKING IT, AND ELECTRONIC DEVICE THEREOF |
| US11527701B2 (en) * | 2019-10-28 | 2022-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Piezoelectric device and method of forming the same |
| WO2021095374A1 (ja) | 2019-11-13 | 2021-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び半導体装置の製造方法、撮像装置 |
| JPWO2024194726A1 (enExample) * | 2023-03-17 | 2024-09-26 | ||
| TWI879491B (zh) * | 2024-03-13 | 2025-04-01 | 世界先進積體電路股份有限公司 | 半導體裝置 |
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| JP2021103798A (ja) | 2021-07-15 |
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| WO2015060133A1 (en) | 2015-04-30 |
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| JP2019216277A (ja) | 2019-12-19 |
| JP7714096B2 (ja) | 2025-07-28 |
| JP2024174018A (ja) | 2024-12-13 |
| JP2015109433A (ja) | 2015-06-11 |
| JP2022105534A (ja) | 2022-07-14 |
| KR102244460B1 (ko) | 2021-04-23 |
| TW201517276A (zh) | 2015-05-01 |
| TWI654761B (zh) | 2019-03-21 |
| JP2019012855A (ja) | 2019-01-24 |
| US9673224B2 (en) | 2017-06-06 |
| JP7305004B2 (ja) | 2023-07-07 |
| JP2023120413A (ja) | 2023-08-29 |
| KR20160072110A (ko) | 2016-06-22 |
| JP6870048B2 (ja) | 2021-05-12 |
| US20150108470A1 (en) | 2015-04-23 |
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