TWI649625B - Substrate cleaning method, substrate cleaning system and memory medium - Google Patents
Substrate cleaning method, substrate cleaning system and memory medium Download PDFInfo
- Publication number
- TWI649625B TWI649625B TW103138203A TW103138203A TWI649625B TW I649625 B TWI649625 B TW I649625B TW 103138203 A TW103138203 A TW 103138203A TW 103138203 A TW103138203 A TW 103138203A TW I649625 B TWI649625 B TW I649625B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- substrate
- liquid supply
- substrate cleaning
- treatment liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 215
- 238000004140 cleaning Methods 0.000 title claims abstract description 206
- 238000000034 method Methods 0.000 title claims abstract description 181
- 239000007788 liquid Substances 0.000 claims abstract description 300
- 238000012545 processing Methods 0.000 claims abstract description 160
- 238000011282 treatment Methods 0.000 claims abstract description 156
- 230000008569 process Effects 0.000 claims abstract description 108
- 206010040844 Skin exfoliation Diseases 0.000 claims abstract description 105
- 238000004090 dissolution Methods 0.000 claims abstract description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 52
- 239000012530 fluid Substances 0.000 claims description 38
- 230000007246 mechanism Effects 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 198
- 239000010408 film Substances 0.000 description 175
- 239000000243 solution Substances 0.000 description 65
- 239000000428 dust Substances 0.000 description 60
- 239000011248 coating agent Substances 0.000 description 54
- 238000000576 coating method Methods 0.000 description 54
- 238000010586 diagram Methods 0.000 description 22
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 238000012546 transfer Methods 0.000 description 17
- 239000000126 substance Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- 238000005406 washing Methods 0.000 description 9
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 8
- 230000009471 action Effects 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N propylene glycol methyl ether Substances COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- ZOCHHNOQQHDWHG-UHFFFAOYSA-N hexan-3-ol Chemical compound CCCC(O)CC ZOCHHNOQQHDWHG-UHFFFAOYSA-N 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Robotics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013234843 | 2013-11-13 | ||
| JP2013-234843 | 2013-11-13 | ||
| JP2014163839A JP6308910B2 (ja) | 2013-11-13 | 2014-08-11 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| JP2014-163839 | 2014-08-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201531807A TW201531807A (zh) | 2015-08-16 |
| TWI649625B true TWI649625B (zh) | 2019-02-01 |
Family
ID=53042613
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103138203A TWI649625B (zh) | 2013-11-13 | 2014-11-04 | Substrate cleaning method, substrate cleaning system and memory medium |
| TW107104187A TWI649626B (zh) | 2013-11-13 | 2014-11-04 | Substrate cleaning method, substrate cleaning system and memory medium |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107104187A TWI649626B (zh) | 2013-11-13 | 2014-11-04 | Substrate cleaning method, substrate cleaning system and memory medium |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US9953826B2 (enExample) |
| JP (1) | JP6308910B2 (enExample) |
| KR (3) | KR102315619B1 (enExample) |
| CN (2) | CN110060924B (enExample) |
| TW (2) | TWI649625B (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6308910B2 (ja) * | 2013-11-13 | 2018-04-11 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| KR20160045299A (ko) | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법 |
| KR101885107B1 (ko) * | 2015-06-30 | 2018-08-06 | 세메스 주식회사 | 기판 처리 방법 및 장치 |
| JP6502206B2 (ja) | 2015-08-07 | 2019-04-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP6552931B2 (ja) * | 2015-09-18 | 2019-07-31 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP6612632B2 (ja) | 2016-01-26 | 2019-11-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| US10386723B2 (en) * | 2016-03-04 | 2019-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with flexible solution adjustment |
| JP6557625B2 (ja) | 2016-03-23 | 2019-08-07 | 東芝メモリ株式会社 | 基板の生産方法、および基板の生産システム |
| JP6945320B2 (ja) * | 2016-05-25 | 2021-10-06 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| US10734255B2 (en) | 2016-05-25 | 2020-08-04 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system and memory medium |
| US10935896B2 (en) * | 2016-07-25 | 2021-03-02 | Applied Materials, Inc. | Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof |
| TWI833688B (zh) * | 2016-12-19 | 2024-03-01 | 日商東京威力科創股份有限公司 | 顯像處理方法、電腦記憶媒體及顯像處理裝置 |
| WO2018128093A1 (ja) | 2017-01-05 | 2018-07-12 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| JP6951229B2 (ja) * | 2017-01-05 | 2021-10-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| JPWO2019009054A1 (ja) * | 2017-07-03 | 2020-04-16 | 東京エレクトロン株式会社 | 基板処理システム、基板洗浄方法および記憶媒体 |
| KR101971152B1 (ko) | 2017-08-18 | 2019-04-22 | 에스케이실트론 주식회사 | 웨이퍼 세정 장치 및 그를 이용한 웨이퍼 세정 장치의 클리닝 방법 |
| TWI755609B (zh) | 2017-09-22 | 2022-02-21 | 日商斯庫林集團股份有限公司 | 基板洗淨方法及基板洗淨裝置 |
| JP6982478B2 (ja) * | 2017-09-22 | 2021-12-17 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄方法および基板洗浄装置 |
| JP7008489B2 (ja) | 2017-12-05 | 2022-01-25 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7013221B2 (ja) * | 2017-12-11 | 2022-01-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7112884B2 (ja) * | 2018-05-24 | 2022-08-04 | 東京エレクトロン株式会社 | 液処理装置、液処理方法、及びコンピュータ読み取り可能な記録媒体 |
| EP3576134B1 (en) * | 2018-05-31 | 2023-06-28 | SCREEN Holdings Co., Ltd. | Substrate processing method |
| JP7227758B2 (ja) * | 2018-05-31 | 2023-02-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7227757B2 (ja) * | 2018-05-31 | 2023-02-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| EP3576133B1 (en) | 2018-05-31 | 2023-11-22 | SCREEN Holdings Co., Ltd. | Substrate processing method |
| WO2020004047A1 (ja) * | 2018-06-27 | 2020-01-02 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| JP7088810B2 (ja) * | 2018-11-07 | 2022-06-21 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
| JP7126429B2 (ja) * | 2018-11-22 | 2022-08-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7116676B2 (ja) * | 2018-12-14 | 2022-08-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7185552B2 (ja) * | 2019-02-13 | 2022-12-07 | 株式会社ディスコ | スピンナ洗浄装置 |
| JP7191748B2 (ja) * | 2019-03-25 | 2022-12-19 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7254163B2 (ja) * | 2019-03-28 | 2023-04-07 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| JP7355535B2 (ja) * | 2019-06-28 | 2023-10-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| KR102680866B1 (ko) | 2019-07-16 | 2024-07-04 | 삼성전자주식회사 | 기판 세정 장치 및 이를 이용한 기판 세정 방법 |
| JP7232737B2 (ja) * | 2019-08-07 | 2023-03-03 | 東京エレクトロン株式会社 | 基板処理装置 |
| CN110376855B (zh) * | 2019-08-19 | 2023-09-19 | 江阴江化微电子材料股份有限公司 | 一种光刻胶剥离试验一体机及光刻胶剥离方法 |
| DE102019216438A1 (de) * | 2019-10-25 | 2021-04-29 | Robert Bosch Gmbh | Verfahren zum Erzeugen von hydrophilen Oberflächen oder Oberflächenbereichen auf einem Träger |
| JP7440316B2 (ja) * | 2020-03-24 | 2024-02-28 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| TWI794774B (zh) * | 2020-03-24 | 2023-03-01 | 日商斯庫林集團股份有限公司 | 基板處理方法及基板處理裝置 |
| JP7546399B2 (ja) * | 2020-07-27 | 2024-09-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、基板処理装置および処理液 |
| JP7580217B2 (ja) * | 2020-07-27 | 2024-11-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、基板処理装置、および、処理液 |
| KR20230113345A (ko) * | 2020-12-04 | 2023-07-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 기재 표면을 세정하기 위한 라미네이트 및 이의 사용 방법 |
| JP7653807B2 (ja) * | 2021-03-11 | 2025-03-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
| JP7744188B2 (ja) * | 2021-09-16 | 2025-09-25 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
| KR20230102300A (ko) * | 2021-12-30 | 2023-07-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US20230364656A1 (en) * | 2022-05-10 | 2023-11-16 | Semes Co., Ltd. | Method for treating a substrate |
| JP7324339B1 (ja) | 2022-05-24 | 2023-08-09 | セメス カンパニー，リミテッド | 基板処理方法 |
| US11925963B2 (en) | 2022-05-27 | 2024-03-12 | Semes Co., Ltd. | Method for treating a substrate |
| GB2624625A (en) * | 2022-11-17 | 2024-05-29 | Rolls Royce Plc | Method and device for cleaning surface of component |
| KR102721406B1 (ko) * | 2022-11-30 | 2024-10-25 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
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| TW201104735A (en) * | 2009-04-14 | 2011-02-01 | Lam Res Corp | Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate |
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2014
- 2014-08-11 JP JP2014163839A patent/JP6308910B2/ja active Active
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- 2014-11-12 US US14/539,174 patent/US9953826B2/en active Active
- 2014-11-12 KR KR1020140157077A patent/KR102315619B1/ko active Active
- 2014-11-13 CN CN201910202521.8A patent/CN110060924B/zh active Active
- 2014-11-13 CN CN201410641257.5A patent/CN104637784B/zh active Active
-
2018
- 2018-02-26 US US15/904,539 patent/US10811283B2/en active Active
-
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- 2020-08-31 US US17/007,085 patent/US11367630B2/en active Active
-
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- 2021-10-15 KR KR1020210137190A patent/KR102447162B1/ko active Active
-
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- 2022-05-17 US US17/745,998 patent/US20220277968A1/en not_active Abandoned
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102608179B1 (ko) | 2023-11-30 |
| CN110060924A (zh) | 2019-07-26 |
| TW201832013A (zh) | 2018-09-01 |
| KR20210130116A (ko) | 2021-10-29 |
| CN104637784B (zh) | 2019-04-09 |
| US20200395230A1 (en) | 2020-12-17 |
| US10811283B2 (en) | 2020-10-20 |
| JP6308910B2 (ja) | 2018-04-11 |
| KR102315619B1 (ko) | 2021-10-21 |
| JP2015119164A (ja) | 2015-06-25 |
| US20220277968A1 (en) | 2022-09-01 |
| US20180182610A1 (en) | 2018-06-28 |
| CN110060924B (zh) | 2023-06-09 |
| KR20150055590A (ko) | 2015-05-21 |
| CN104637784A (zh) | 2015-05-20 |
| US20150128994A1 (en) | 2015-05-14 |
| KR102447162B1 (ko) | 2022-09-26 |
| TW201531807A (zh) | 2015-08-16 |
| US9953826B2 (en) | 2018-04-24 |
| TWI649626B (zh) | 2019-02-01 |
| US11367630B2 (en) | 2022-06-21 |
| KR20220133830A (ko) | 2022-10-05 |
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