KR102315619B1 - 기판 세정 방법, 기판 세정 시스템 및 기억 매체 - Google Patents

기판 세정 방법, 기판 세정 시스템 및 기억 매체 Download PDF

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KR102315619B1
KR102315619B1 KR1020140157077A KR20140157077A KR102315619B1 KR 102315619 B1 KR102315619 B1 KR 102315619B1 KR 1020140157077 A KR1020140157077 A KR 1020140157077A KR 20140157077 A KR20140157077 A KR 20140157077A KR 102315619 B1 KR102315619 B1 KR 102315619B1
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film
substrate
treatment
treatment liquid
peeling
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KR20150055590A (ko
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미야코 가네코
케이지 타노우치
타케히코 오리이
이타루 칸노
메이토쿠 아이바라
사토루 다나카
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Robotics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
KR1020140157077A 2013-11-13 2014-11-12 기판 세정 방법, 기판 세정 시스템 및 기억 매체 Active KR102315619B1 (ko)

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KR1020210137190A KR102447162B1 (ko) 2013-11-13 2021-10-15 기판 세정 방법, 기판 세정 시스템 및 기억 매체

Applications Claiming Priority (4)

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JPJP-P-2013-234843 2013-11-13
JP2013234843 2013-11-13
JPJP-P-2014-163839 2014-08-11
JP2014163839A JP6308910B2 (ja) 2013-11-13 2014-08-11 基板洗浄方法、基板洗浄システムおよび記憶媒体

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KR20150055590A KR20150055590A (ko) 2015-05-21
KR102315619B1 true KR102315619B1 (ko) 2021-10-21

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KR1020210137190A Active KR102447162B1 (ko) 2013-11-13 2021-10-15 기판 세정 방법, 기판 세정 시스템 및 기억 매체
KR1020220118289A Active KR102608179B1 (ko) 2013-11-13 2022-09-20 기판 세정 방법, 기판 세정 시스템 및 기억 매체

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KR1020220118289A Active KR102608179B1 (ko) 2013-11-13 2022-09-20 기판 세정 방법, 기판 세정 시스템 및 기억 매체

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US (4) US9953826B2 (enExample)
JP (1) JP6308910B2 (enExample)
KR (3) KR102315619B1 (enExample)
CN (2) CN110060924B (enExample)
TW (2) TWI649625B (enExample)

Cited By (2)

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KR20210130116A (ko) * 2013-11-13 2021-10-29 도쿄엘렉트론가부시키가이샤 기판 세정 방법, 기판 세정 시스템 및 기억 매체
US11925963B2 (en) 2022-05-27 2024-03-12 Semes Co., Ltd. Method for treating a substrate

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KR20160045299A (ko) 2014-10-17 2016-04-27 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법
KR101885107B1 (ko) 2015-06-30 2018-08-06 세메스 주식회사 기판 처리 방법 및 장치
JP6502206B2 (ja) * 2015-08-07 2019-04-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6552931B2 (ja) * 2015-09-18 2019-07-31 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6612632B2 (ja) 2016-01-26 2019-11-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
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JP6557625B2 (ja) * 2016-03-23 2019-08-07 東芝メモリ株式会社 基板の生産方法、および基板の生産システム
JP6945320B2 (ja) * 2016-05-25 2021-10-06 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
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JP6951229B2 (ja) * 2017-01-05 2021-10-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
CN116646279A (zh) 2017-01-05 2023-08-25 株式会社斯库林集团 基板清洗装置及基板清洗方法
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KR101971152B1 (ko) * 2017-08-18 2019-04-22 에스케이실트론 주식회사 웨이퍼 세정 장치 및 그를 이용한 웨이퍼 세정 장치의 클리닝 방법
JP6982478B2 (ja) * 2017-09-22 2021-12-17 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法および基板洗浄装置
TWI755609B (zh) * 2017-09-22 2022-02-21 日商斯庫林集團股份有限公司 基板洗淨方法及基板洗淨裝置
JP7008489B2 (ja) 2017-12-05 2022-01-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7013221B2 (ja) * 2017-12-11 2022-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7112884B2 (ja) * 2018-05-24 2022-08-04 東京エレクトロン株式会社 液処理装置、液処理方法、及びコンピュータ読み取り可能な記録媒体
JP7227758B2 (ja) * 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7227757B2 (ja) 2018-05-31 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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US20150128994A1 (en) 2015-05-14
CN104637784A (zh) 2015-05-20
US11367630B2 (en) 2022-06-21
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CN110060924A (zh) 2019-07-26
US20180182610A1 (en) 2018-06-28
US9953826B2 (en) 2018-04-24
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TW201531807A (zh) 2015-08-16
US10811283B2 (en) 2020-10-20
US20200395230A1 (en) 2020-12-17
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