TWI647007B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI647007B
TWI647007B TW106123050A TW106123050A TWI647007B TW I647007 B TWI647007 B TW I647007B TW 106123050 A TW106123050 A TW 106123050A TW 106123050 A TW106123050 A TW 106123050A TW I647007 B TWI647007 B TW I647007B
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TW
Taiwan
Prior art keywords
flow rate
inert gas
supplied
water vapor
mixed gas
Prior art date
Application number
TW106123050A
Other languages
English (en)
Chinese (zh)
Other versions
TW201813710A (zh
Inventor
松井則政
Original Assignee
斯庫林集團股份有限公司
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Publication of TW201813710A publication Critical patent/TW201813710A/zh
Application granted granted Critical
Publication of TWI647007B publication Critical patent/TWI647007B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Weting (AREA)
TW106123050A 2016-09-28 2017-07-10 基板處理裝置及基板處理方法 TWI647007B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016189206A JP6693846B2 (ja) 2016-09-28 2016-09-28 基板処理装置および基板処理方法
JP2016-189206 2016-09-28

Publications (2)

Publication Number Publication Date
TW201813710A TW201813710A (zh) 2018-04-16
TWI647007B true TWI647007B (zh) 2019-01-11

Family

ID=61760394

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106123050A TWI647007B (zh) 2016-09-28 2017-07-10 基板處理裝置及基板處理方法

Country Status (5)

Country Link
JP (1) JP6693846B2 (ko)
KR (1) KR102129219B1 (ko)
CN (1) CN109690743B (ko)
TW (1) TWI647007B (ko)
WO (1) WO2018061405A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7031413B2 (ja) * 2018-03-23 2022-03-08 株式会社三洋物産 遊技機
JP7131033B2 (ja) * 2018-03-30 2022-09-06 株式会社三洋物産 遊技機
JP2019177124A (ja) * 2018-03-30 2019-10-17 株式会社三洋物産 遊技機
JP7198595B2 (ja) * 2018-05-31 2023-01-04 東京エレクトロン株式会社 基板液処理方法、基板液処理装置及び記憶媒体
JP7176904B2 (ja) 2018-09-21 2022-11-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7190912B2 (ja) * 2019-01-10 2022-12-16 東京エレクトロン株式会社 基板処理装置
TWI750592B (zh) * 2019-02-20 2021-12-21 日商斯庫林集團股份有限公司 基板處理裝置及基板處理方法
JP7368264B2 (ja) 2019-02-20 2023-10-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理方法
JP7408445B2 (ja) * 2020-03-17 2024-01-05 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP2022026660A (ja) 2020-07-31 2022-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP7476024B2 (ja) 2020-08-03 2024-04-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140380A (ja) * 1992-10-28 1994-05-20 Sanyo Electric Co Ltd エッチング装置
US20050236363A1 (en) * 1997-05-09 2005-10-27 Bergman Eric J System and methods for polishing a wafer
TW201526141A (zh) * 2013-09-30 2015-07-01 Shibaura Mechatronics Corp 基板處理裝置及基板處理方法
TWI547989B (zh) * 2013-02-15 2016-09-01 斯克林集團公司 基板處理裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810684B2 (ja) * 1989-02-17 1996-01-31 山形日本電気株式会社 半導体装置の製造装置
JPH0350724A (ja) * 1989-07-19 1991-03-05 Hitachi Ltd ウエットエッチング装置
JPH10214813A (ja) * 1997-01-31 1998-08-11 Matsushita Electron Corp 半導体ウェーハの洗浄方法および洗浄装置
JP4318011B2 (ja) * 2000-06-02 2009-08-19 株式会社日立ハイテクノロジーズ 基板処理装置及び処理方法
US6497785B2 (en) * 2001-01-16 2002-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Wet chemical process tank with improved fluid circulation
JP2002219429A (ja) * 2001-01-23 2002-08-06 Hitachi Electronics Eng Co Ltd 基板処理装置及び処理方法
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
JP2005038647A (ja) * 2003-07-16 2005-02-10 Nittetsu Elex Co Ltd 加湿ガス供給システム
JP2008147637A (ja) * 2006-11-16 2008-06-26 Kurita Water Ind Ltd エッチング方法およびエッチング装置
WO2009013797A1 (ja) * 2007-07-20 2009-01-29 Aqua Science Corporation 対象物処理方法及び対象物処理システム
JP2009266561A (ja) * 2008-04-24 2009-11-12 Espec Corp ガス供給装置、燃料電池評価試験装置、並びに、燃料電池システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140380A (ja) * 1992-10-28 1994-05-20 Sanyo Electric Co Ltd エッチング装置
US20050236363A1 (en) * 1997-05-09 2005-10-27 Bergman Eric J System and methods for polishing a wafer
TWI547989B (zh) * 2013-02-15 2016-09-01 斯克林集團公司 基板處理裝置
TW201526141A (zh) * 2013-09-30 2015-07-01 Shibaura Mechatronics Corp 基板處理裝置及基板處理方法

Also Published As

Publication number Publication date
WO2018061405A1 (ja) 2018-04-05
JP2018056258A (ja) 2018-04-05
TW201813710A (zh) 2018-04-16
CN109690743A (zh) 2019-04-26
KR102129219B1 (ko) 2020-07-01
JP6693846B2 (ja) 2020-05-13
KR20190034254A (ko) 2019-04-01
CN109690743B (zh) 2023-10-20

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