JP7176904B2 - 基板処理装置および基板処理方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title description 49
- 239000012530 fluid Substances 0.000 claims description 770
- 239000007788 liquid Substances 0.000 claims description 356
- 239000007789 gas Substances 0.000 description 94
- 238000010586 diagram Methods 0.000 description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000011282 treatment Methods 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000001105 regulatory effect Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 240000001973 Ficus microcarpa Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
110 処理槽
120 基板保持部
130 流体供給部
140 制御部
W 基板
L 処理液
Claims (6)
- 基板を処理するための処理液を貯留する処理槽と、
前記処理槽の前記処理液内で前記基板を保持する基板保持部と、
前記処理槽に流体を供給する流体供給部と、
前記基板保持部に保持された前記基板の下方に配置され、前記処理槽に液体を供給する液体供給部と、
前記流体供給部および前記液体供給部を制御する制御部と
を備え、
前記制御部は、前記基板を浸漬させた処理液を貯留した前記処理槽に対して前記流体の供給を開始してから前記基板を浸漬させた処理液を貯留した前記処理槽に対する前記流体の供給を終了するまでの間に前記流体供給部が前記流体の供給を変更するように前記流体供給部を制御し、
前記流体供給部は、
前記処理槽内の第1位置に配置され、前記処理槽に流体を供給する第1流体供給部と、
前記処理槽内の第2位置に配置され、前記第1流体供給部が前記流体を供給する期間とは異なる期間に前記処理槽に流体を供給する第2流体供給部と
を含み、
前記液体供給部は、第1液体供給管および第2液体供給管を含み、
前記第1液体供給管は、前記基板の鉛直中心軸に対して一方側に配置され、
前記第2液体供給管は、前記基板の鉛直中心軸に対して他方側に配置され、
前記第1液体供給管には、前記基板の鉛直中心軸側に、前記基板の鉛直中心軸に斜めに向けられた吐出口が設けられており、
前記第2液体供給管には、前記基板の鉛直中心軸側に、前記基板の鉛直中心軸に斜めに向けられた吐出口が設けられており、
前記第1流体供給部は、第1流体供給管および第2流体供給管を有し、
前記第1流体供給管は、前記基板の鉛直中心軸と前記第1液体供給管との間に位置し、
前記第2流体供給管は、前記基板の鉛直中心軸と前記第2液体供給管との間に位置し、
前記第2流体供給部は、第3流体供給管および第4流体供給管を有し、
前記第3流体供給管と前記第1流体供給管との間に前記第1液体供給管が位置し、
前記第4流体供給管と前記第2流体供給管との間に前記第2液体供給管が位置し、
前記制御部は、
第1期間において、前記第1液体供給管および前記第2液体供給管が前記液体を供給するとともに前記第1流体供給管および前記第2流体供給管が前記流体として気体を供給するように前記流体供給部および前記液体供給部を制御し、
第2期間において、前記第1液体供給管および前記第2液体供給管が前記液体を供給するとともに前記第3流体供給管および前記第4流体供給管が前記流体として気体を供給するように前記流体供給部および前記液体供給部を制御する、基板処理装置。 - 前記第1流体供給管および前記第2流体供給管は、前記基板の鉛直中心軸に対して、対称に配置される、請求項1に記載の基板処理装置。
- 前記第3流体供給管および前記第4流体供給管は、前記基板の鉛直中心軸に対して、対称に配置される、請求項1または2に記載の基板処理装置。
- 前記制御部は、前記第1流体供給部による前記流体の供給および前記第2流体供給部による前記流体の供給を切り替えて前記第1流体供給部の前記流体および前記第2流体供給部の前記流体の少なくとも一方を前記処理槽に供給するように前記第1流体供給部および前記第2流体供給部を制御する、請求項1から3のいずれかに記載の基板処理装置。
- 前記第1液体供給管および前記第2液体供給管は、前記基板の鉛直中心軸に対して、対称に配置される、請求項1から4のいずれかに記載の基板処理装置。
- 前記基板は、一列に複数配列されており、
前記第1液体供給管の前記吐出口は、複数の基板のうちの隣接する2つの基板の間に位置し、
前記第2液体供給管の前記吐出口は、複数の基板のうちの隣接する2つの基板の間に位置する、請求項1から5のいずれかに記載の基板処理装置。
Priority Applications (7)
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JP2018177250A JP7176904B2 (ja) | 2018-09-21 | 2018-09-21 | 基板処理装置および基板処理方法 |
KR1020190100820A KR102294137B1 (ko) | 2018-09-21 | 2019-08-19 | 기판 처리 장치 및 기판 처리 방법 |
CN201910770657.9A CN110943006A (zh) | 2018-09-21 | 2019-08-20 | 基板处理装置以及基板处理方法 |
US16/551,707 US20200098597A1 (en) | 2018-09-21 | 2019-08-26 | Substrate processing device and substrate processing method |
TW108130727A TWI754164B (zh) | 2018-09-21 | 2019-08-28 | 基板處理裝置以及基板處理方法 |
US17/359,629 US11699601B2 (en) | 2018-09-21 | 2021-06-27 | Substrate processing method |
KR1020210109977A KR102408818B1 (ko) | 2018-09-21 | 2021-08-20 | 기판 처리 장치 및 기판 처리 방법 |
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CN111524834B (zh) * | 2020-04-29 | 2023-08-18 | 西安奕斯伟材料科技股份有限公司 | 一种多晶硅清洗装置及方法 |
JP7466372B2 (ja) * | 2020-05-13 | 2024-04-12 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP7461269B2 (ja) | 2020-10-09 | 2024-04-03 | 株式会社Screenホールディングス | 基板処理装置 |
JP7510334B2 (ja) * | 2020-10-30 | 2024-07-03 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR20230042647A (ko) * | 2021-09-22 | 2023-03-29 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
JP2023112618A (ja) | 2022-02-01 | 2023-08-14 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2023135013A (ja) * | 2022-03-15 | 2023-09-28 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007300118A (ja) | 2006-04-27 | 2007-11-15 | Samsung Electronics Co Ltd | 基板エッチング装置及びそれを用いた基板エッチング方法 |
JP2010040759A (ja) | 2008-08-05 | 2010-02-18 | Toshiba Mobile Display Co Ltd | 基板処理装置 |
JP2017069529A (ja) | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
JP2017069383A (ja) | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2018014470A (ja) | 2016-07-22 | 2018-01-25 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3960457B2 (ja) | 1999-10-27 | 2007-08-15 | 東邦化成株式会社 | 基板処理装置 |
JP2006156648A (ja) * | 2004-11-29 | 2006-06-15 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2008010495A (ja) | 2006-06-27 | 2008-01-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP4907400B2 (ja) * | 2006-07-25 | 2012-03-28 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板処理方法 |
JP4803821B2 (ja) * | 2007-03-23 | 2011-10-26 | 大日本スクリーン製造株式会社 | 基板処理装置 |
TWI406330B (zh) | 2007-09-26 | 2013-08-21 | Dainippon Screen Mfg | 基板處理裝置及基板處理方法 |
KR20100050403A (ko) | 2008-11-04 | 2010-05-13 | 주식회사 실트론 | 대상물의 습식 처리 장치 및 방법과 이에 사용되는 유체 확산판 |
JP5599754B2 (ja) * | 2010-05-31 | 2014-10-01 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、およびこの基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体 |
JP5890198B2 (ja) * | 2011-03-25 | 2016-03-22 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP6800675B2 (ja) * | 2016-09-26 | 2020-12-16 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
JP6693846B2 (ja) | 2016-09-28 | 2020-05-13 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6866148B2 (ja) * | 2016-12-20 | 2021-04-28 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN108376660B (zh) * | 2017-02-01 | 2023-08-01 | 东京毅力科创株式会社 | 基板液处理装置 |
JP6971756B2 (ja) * | 2017-02-01 | 2021-11-24 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP6770915B2 (ja) * | 2017-03-08 | 2020-10-21 | 株式会社Screenホールディングス | 熱処理装置 |
US11594430B2 (en) * | 2017-09-11 | 2023-02-28 | Tokyo Electron Limited | Substrate liquid processing apparatus, substrate liquid processing method and recording medium |
-
2018
- 2018-09-21 JP JP2018177250A patent/JP7176904B2/ja active Active
-
2019
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007300118A (ja) | 2006-04-27 | 2007-11-15 | Samsung Electronics Co Ltd | 基板エッチング装置及びそれを用いた基板エッチング方法 |
JP2010040759A (ja) | 2008-08-05 | 2010-02-18 | Toshiba Mobile Display Co Ltd | 基板処理装置 |
JP2017069529A (ja) | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
JP2017069383A (ja) | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2018014470A (ja) | 2016-07-22 | 2018-01-25 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
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US20200098597A1 (en) | 2020-03-26 |
TWI754164B (zh) | 2022-02-01 |
JP2020047885A (ja) | 2020-03-26 |
TW202013561A (zh) | 2020-04-01 |
CN110943006A (zh) | 2020-03-31 |
US11699601B2 (en) | 2023-07-11 |
KR102408818B1 (ko) | 2022-06-14 |
KR102294137B1 (ko) | 2021-08-25 |
KR20200034579A (ko) | 2020-03-31 |
KR20210109493A (ko) | 2021-09-06 |
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