JP7476024B2 - 基板処理方法及び基板処理装置 - Google Patents
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- 229910052786 argon Inorganic materials 0.000 description 1
- ZFSFDELZPURLKD-UHFFFAOYSA-N azanium;hydroxide;hydrate Chemical compound N.O.O ZFSFDELZPURLKD-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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Description
図1を参照して、本発明の実施形態1に係る基板処理装置100A及び基板処理方法を説明する。まず、図1を参照して、基板処理装置100Aを説明する。図1は、基板処理装置100Aを示す模式的斜視図である。具体的には、図1(a)及び図1(b)は、基板Wを処理槽110に投入する前及び後の基板処理装置100Aの模式的斜視図である。
図11を参照して、本発明の実施形態2に係る基板処理装置100Bを説明する。図11は、複数の循環処理液供給部材130及び複数の気泡供給管180を示す模式的平面図である。実施形態2に係る基板処理装置100Bが、複数の気泡供給管180の各々の状態を判定する点で、実施形態2は実施形態1と主に異なる。以下、実施形態2が実施形態1と異なる点を主に説明する。
100A 基板処理装置
110 処理槽
180A 気泡供給管
262 気体供給管
353 比重計(計測部)
G 気泡供給孔(開口)
LQ 処理液
W 基板
Claims (8)
- 処理液で基板を処理する基板処理方法であって、
複数の開口を有する気泡供給管に気体を供給して、気泡として前記気体を前記処理液中に供給する工程と、
前記気泡が供給された前記処理液の状態に起因する物理量を、前記処理液中で計測する工程と、
前記物理量に基づいて、前記複数の開口の状態を判定する工程と
を含む、基板処理方法。 - 前記物理量は、前記気泡が供給された前記処理液の比重を示し、
前記判定する工程では、前記比重に基づいて、前記複数の開口の状態を判定する、請求項1に記載の基板処理方法。 - 前記物理量は、前記気泡が供給された前記処理液中で生じる圧力を示し、
前記判定する工程では、前記圧力に基づいて、前記複数の開口の状態を判定する、請求項1に記載の基板処理方法。 - 前記状態を判定する前記工程では、第1時間に計測された前記物理量である基準物理量と、第2時間に計測された前記物理量である計測物理量とを比較し、前記複数の開口の状態を判定し、
前記第1時間と前記第2時間とは、異なる、請求項1から請求項3のいずれか1項に記載の基板処理方法。 - 前記第1時間は、前記基板を処理する前の時を示し、
前記第2時間は、前記基板を処理した後の時を示し、
前記状態を判定する前記工程では、前記基準物理量と前記計測物理量との差分に基づいて、前記複数の開口の状態が異常であるか否かを判定する、請求項4に記載の基板処理方法。 - 前記気体を供給する前記工程では、
前記基板を処理する時に、前記気泡供給管に第1流量の前記気体を供給し、
前記複数の開口の状態を判定する時に、前記気泡供給管に第2流量の前記気体を供給し、
前記第2流量は、前記第1流量より多い、請求項1から請求項5のいずれか1項に記載の基板処理方法。 - 処理液を貯留して、基板を浸漬する処理槽と、
前記処理液中に気泡として気体を供給する複数の開口を有する気泡供給管と、
前記気泡が供給された前記処理液の状態に起因する物理量を、前記処理液中で計測する計測部と、
前記物理量に基づいて、前記複数の開口の状態を判定する判定部と
を備える、基板処理装置。 - 前記計測部は、
前記処理槽内に配置された管と、
前記管に気体を供給するガス供給機構と
を有する比重計である、請求項7に記載の基板処理装置。
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JP2020131781A JP7476024B2 (ja) | 2020-08-03 | 2020-08-03 | 基板処理方法及び基板処理装置 |
KR1020210099153A KR102516920B1 (ko) | 2020-08-03 | 2021-07-28 | 기판 처리 방법 및 기판 처리 장치 |
CN202110864672.7A CN114068358A (zh) | 2020-08-03 | 2021-07-29 | 基板处理方法以及基板处理装置 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011161325A (ja) | 2010-02-05 | 2011-08-25 | Shibaura Mechatronics Corp | 微細バブル混在液生成装置 |
JP2018174257A (ja) | 2017-03-31 | 2018-11-08 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP2019050349A (ja) | 2017-09-11 | 2019-03-28 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法及び記憶媒体 |
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JP6037649B2 (ja) * | 2012-04-26 | 2016-12-07 | 芝浦メカトロニクス株式会社 | 微細気泡発生装置、微細気泡発生方法、基板処理装置、および基板処理方法 |
JP6693846B2 (ja) | 2016-09-28 | 2020-05-13 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US11594430B2 (en) * | 2017-09-11 | 2023-02-28 | Tokyo Electron Limited | Substrate liquid processing apparatus, substrate liquid processing method and recording medium |
US11414757B2 (en) * | 2017-11-13 | 2022-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gas tube, gas supply system and manufacturing method of semiconductor device using the same |
JP2020021822A (ja) * | 2018-07-31 | 2020-02-06 | 東芝メモリ株式会社 | 基板処理装置および半導体装置の製造方法 |
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JP2011161325A (ja) | 2010-02-05 | 2011-08-25 | Shibaura Mechatronics Corp | 微細バブル混在液生成装置 |
JP2018174257A (ja) | 2017-03-31 | 2018-11-08 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP2019050349A (ja) | 2017-09-11 | 2019-03-28 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法及び記憶媒体 |
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KR102516920B1 (ko) | 2023-03-31 |
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