JP7408445B2 - 半導体製造装置および半導体装置の製造方法 - Google Patents
半導体製造装置および半導体装置の製造方法 Download PDFInfo
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- JP7408445B2 JP7408445B2 JP2020046623A JP2020046623A JP7408445B2 JP 7408445 B2 JP7408445 B2 JP 7408445B2 JP 2020046623 A JP2020046623 A JP 2020046623A JP 2020046623 A JP2020046623 A JP 2020046623A JP 7408445 B2 JP7408445 B2 JP 7408445B2
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000000126 substance Substances 0.000 claims description 117
- 239000007788 liquid Substances 0.000 claims description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 51
- 238000001514 detection method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000005484 gravity Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 142
- 239000000243 solution Substances 0.000 description 84
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 71
- 239000007864 aqueous solution Substances 0.000 description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 239000008367 deionised water Substances 0.000 description 19
- 229910021641 deionized water Inorganic materials 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000011084 recovery Methods 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Description
本実施の形態に係る基板処理装置(半導体製造装置)は、基板を一枚ずつ処理する枚葉式の半導体製造装置である。その半導体製造装置においては、酸化ケイ素(SiO2)からなるシリコン酸化膜および窒化ケイ素(Si3N4)からなるシリコン窒化膜が形成された基板に、処理液としてシリコンを含む高温のリン酸水溶液(H3PO4+H2O)が供給される。この場合、リン酸水溶液がシリコンを含むことによりシリコン酸化膜のエッチングレートが低下する。それにより、シリコン窒化膜が選択的にエッチングされる。
供給する。
図5は、第2実施形態による処理部1aおよびその周辺の構成を示す模式図である。第2実施形態は、複数の基板Wを一括して処理するバッチ式の半導体製造装置100である点で、第1実施形態と異なる。
Claims (7)
- 基板を処理する薬液を貯留するタンクと、
前記薬液を加熱する加熱部と、
前記タンク内の前記薬液に気泡を供給する気泡供給部と、
前記薬液の濃度、前記薬液の水濃度、前記薬液の比重、および、前記タンクから排出される気体の水蒸気濃度の少なくとも1つを検出するセンサと、
前記センサの検出結果に基づいて、前記気泡供給部による気泡の供給を制御する制御部と、を備え、
前記気泡供給部は、
前記薬液の外部の気体が通過する吸気路と、
前記薬液が通過する流路であって、前記薬液と前記吸気路を通過する気体とを混合する流路と、を有し、
前記流路は、前記吸気路の一端と接続される接続部を有し、
前記流路の流路径は、前記接続部よりも上流側から前記接続部にかけて小さくなり、前記接続部から前記接続部よりも下流側にかけて大きくなり、
前記吸気路は、前記接続部内に気体を引き込む、半導体製造装置。 - 前記タンクに対して前記薬液を循環させる循環路をさらに備え、
前記加熱部は、循環する前記薬液を加熱し、
前記気泡供給部は、循環する前記薬液を気体と混合して前記タンク内に供給することにより、前記タンク内の前記薬液に気泡を供給する、請求項1に記載の半導体製造装置。 - 前記タンクは、前記薬液を貯留する第1槽と、該第1槽からオーバーフローする前記薬液を受ける第2槽と、を有し、
前記循環路は、前記第1槽と前記第2槽との間で前記薬液を循環させ、
前記気泡供給部は、循環する前記薬液を気体と混合して前記第1槽内に供給する、請求項2に記載の半導体製造装置。 - 前記気泡供給部は、前記吸気路の経路上に設けられ、気体の通過を調整する調整部をさらに有し、
前記制御部は、前記調整部を制御することにより、前記気泡供給部による気泡の供給を制御する、請求項1から請求項3のいずれか一項に記載の半導体製造装置。 - 前記タンク内を排気する排気部をさらに備える、請求項1から請求項4のいずれか一項に記載の半導体製造装置。
- 前記タンク内の前記薬液に水を供給する水供給部をさらに備え、
前記制御部は、前記センサの検出結果が所定値になるように、前記気泡供給部による気泡の供給および前記水供給部による水の供給を制御する、請求項1から請求項5のいずれか一項に記載の半導体製造装置。 - 前記気泡供給部は、前記タンクの下部に設けられる、請求項1から請求項6のいずれか一項に記載の半導体製造装置。
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JP2020046623A JP7408445B2 (ja) | 2020-03-17 | 2020-03-17 | 半導体製造装置および半導体装置の製造方法 |
TW109127054A TWI754346B (zh) | 2020-03-17 | 2020-08-10 | 半導體製造裝置及半導體裝置之製造方法 |
CN202010806940.5A CN113410158A (zh) | 2020-03-17 | 2020-08-12 | 半导体制造装置及半导体装置的制造方法 |
US17/119,431 US11676828B2 (en) | 2020-03-17 | 2020-12-11 | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
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Citations (3)
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JP2019192708A (ja) | 2018-04-20 | 2019-10-31 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2019212652A (ja) | 2018-05-31 | 2019-12-12 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置及び記憶媒体 |
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JP2017069529A (ja) | 2015-09-30 | 2017-04-06 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
JP2019192708A (ja) | 2018-04-20 | 2019-10-31 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2019212652A (ja) | 2018-05-31 | 2019-12-12 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置及び記憶媒体 |
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TW202137320A (zh) | 2021-10-01 |
JP2021150381A (ja) | 2021-09-27 |
CN113410158A (zh) | 2021-09-17 |
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US20210296143A1 (en) | 2021-09-23 |
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