TWI631125B - 包含醯胺基亞胺配位體之金屬錯合物 - Google Patents
包含醯胺基亞胺配位體之金屬錯合物 Download PDFInfo
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- TWI631125B TWI631125B TW103137274A TW103137274A TWI631125B TW I631125 B TWI631125 B TW I631125B TW 103137274 A TW103137274 A TW 103137274A TW 103137274 A TW103137274 A TW 103137274A TW I631125 B TWI631125 B TW I631125B
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- butyl
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 146
- 239000002184 metal Substances 0.000 title claims abstract description 137
- 239000003446 ligand Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 90
- -1 guanamine imine Chemical class 0.000 claims abstract description 34
- 150000004696 coordination complex Chemical class 0.000 claims description 136
- 229910052739 hydrogen Inorganic materials 0.000 claims description 76
- 239000001257 hydrogen Substances 0.000 claims description 74
- 150000002431 hydrogen Chemical class 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 44
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 43
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 43
- 125000000217 alkyl group Chemical group 0.000 claims description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 238000000231 atomic layer deposition Methods 0.000 claims description 34
- 125000003118 aryl group Chemical group 0.000 claims description 27
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 27
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 26
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 25
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 25
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 229910017052 cobalt Inorganic materials 0.000 claims description 18
- 239000010941 cobalt Substances 0.000 claims description 18
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 18
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 239000000376 reactant Substances 0.000 claims description 17
- 238000005019 vapor deposition process Methods 0.000 claims description 17
- 230000000737 periodic effect Effects 0.000 claims description 15
- 230000008016 vaporization Effects 0.000 claims description 14
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- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 125000000041 C6-C10 aryl group Chemical group 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 8
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 8
- LRDJLICCIZGMSB-UHFFFAOYSA-N ethenyldiazene Chemical compound C=CN=N LRDJLICCIZGMSB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 5
- 229910000085 borane Inorganic materials 0.000 claims description 5
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000003570 air Substances 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- 150000002923 oximes Chemical class 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 claims 2
- JWZZKOKVBUJMES-UHFFFAOYSA-N (+-)-Isoprenaline Chemical compound CC(C)NCC(O)C1=CC=C(O)C(O)=C1 JWZZKOKVBUJMES-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 84
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 45
- 239000011572 manganese Substances 0.000 description 39
- 229910052748 manganese Inorganic materials 0.000 description 39
- 239000002243 precursor Substances 0.000 description 34
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 239000012453 solvate Substances 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 14
- RRZKHZBOZDIQJG-UHFFFAOYSA-N azane;manganese Chemical compound N.[Mn] RRZKHZBOZDIQJG-UHFFFAOYSA-N 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000004821 distillation Methods 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- VHFOQWIHSLTZAU-UHFFFAOYSA-N CN(C(N(CCCCCCCCCC)[Mn]N(C(=NC)N(C)C)CCCCCCCCCC)=NC)C Chemical compound CN(C(N(CCCCCCCCCC)[Mn]N(C(=NC)N(C)C)CCCCCCCCCC)=NC)C VHFOQWIHSLTZAU-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 150000002696 manganese Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- AMIMRNSIRUDHCM-UHFFFAOYSA-N Isopropylaldehyde Chemical compound CC(C)C=O AMIMRNSIRUDHCM-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
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- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical group [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
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- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical group NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
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- 101150065749 Churc1 gene Proteins 0.000 description 2
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- 229910021380 Manganese Chloride Inorganic materials 0.000 description 2
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- 102100038239 Protein Churchill Human genes 0.000 description 2
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- 125000000879 imine group Chemical group 0.000 description 2
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- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
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- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
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- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
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- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- QVRFMRZEAVHYMX-UHFFFAOYSA-L manganese(2+);diperchlorate Chemical compound [Mn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O QVRFMRZEAVHYMX-UHFFFAOYSA-L 0.000 description 1
- HEYNLDRKZOOEDN-UHFFFAOYSA-L manganese(2+);trifluoromethanesulfonate Chemical compound [Mn+2].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F HEYNLDRKZOOEDN-UHFFFAOYSA-L 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- QWYFOIJABGVEFP-UHFFFAOYSA-L manganese(ii) iodide Chemical compound [Mn+2].[I-].[I-] QWYFOIJABGVEFP-UHFFFAOYSA-L 0.000 description 1
- KNLQKHUBPCXPQD-UHFFFAOYSA-N manganese;sulfuric acid Chemical compound [Mn].OS(O)(=O)=O KNLQKHUBPCXPQD-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- YWFWDNVOPHGWMX-UHFFFAOYSA-N n,n-dimethyldodecan-1-amine Chemical compound CCCCCCCCCCCCN(C)C YWFWDNVOPHGWMX-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GMTCPFCMAHMEMT-UHFFFAOYSA-N n-decyldecan-1-amine Chemical compound CCCCCCCCCCNCCCCCCCCCC GMTCPFCMAHMEMT-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 229940067157 phenylhydrazine Drugs 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000002577 pseudohalo group Chemical group 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000005348 self-cleaning glass Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000006296 sulfonyl amino group Chemical group [H]N(*)S(*)(=O)=O 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- LMBFAGIMSUYTBN-MPZNNTNKSA-N teixobactin Chemical compound C([C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](CCC(N)=O)C(=O)N[C@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H]1C(N[C@@H](C)C(=O)N[C@@H](C[C@@H]2NC(=N)NC2)C(=O)N[C@H](C(=O)O[C@H]1C)[C@@H](C)CC)=O)NC)C1=CC=CC=C1 LMBFAGIMSUYTBN-MPZNNTNKSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
- C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic Table
- C07F13/005—Compounds without a metal-carbon linkage
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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Abstract
本發明提供包含一或多種醯胺基亞胺配位體之金屬錯合物、製備該等金屬錯合物之方法、及使用該等金屬錯合物於製備含金屬膜之方法。
Description
本發明技術大體上係關於包含至少一個醯胺基亞胺配位體之金屬錯合物、製備該等金屬錯合物之方法、及使用該等金屬錯合物來製備含金屬薄膜之方法。
使用多種不同前驅物以形成薄膜及已採用多種沉積技術。該等技術包括反應性濺鍍、離子輔助沉積、溶膠-凝膠沉積、CVD(亦稱為金屬有機CVD或MOCVD)、及ALD(亦稱為原子層磊晶法)。CVD及ALD製程之使用日益增加,此乃因其等具有以下優點:良好組成控制、高膜均勻度、良好控制摻雜及顯著地其等對與現代化微電子裝置結合之高度非平面幾何結構提供極佳保形步階覆蓋率。
CVD為使用前驅物以於基板表面上形成薄膜之化學製程。於典型CVD製程中,前驅物係在低壓或環境壓力反應室中越過基板(例如,晶圓)之表面。前驅物在基板表面上起反應及/或分解從而產生沉積材料之薄膜。揮發性副產物藉由氣體流動通過反應室被移除。可能極難控制沉積膜厚度,此乃因其係取決於諸如溫度、壓力、氣體流量體積及均勻度、化學耗竭效應、及時間之諸多參數之配合。
ALD亦係用於沉積薄膜之方法。ALD係一種以可提供精確厚度控制及沉積由前驅物所提供材料之保形薄膜至不同組成之表面基板上之表面反應為基礎之自限制、連續、獨特之膜生長技術。於ALD中,前
驅物係在反應期間分離。第一前驅物越過基板表面,從而在基板表面上製得單層。自反應室泵出任何過量的未反應之前驅物。接著第二前驅物越過基板表面並與第一前驅物起反應,從而形成膜之第二單層於膜在基板表面上之第一形成之單層之上。重複該循環以產生所欲厚度之膜。
薄膜(及特定言之含金屬薄膜)(諸如)在奈米技術及半導體裝置之製造中具有多種重要應用。該等應用之實例包括在場效電晶體(FET)、電容器電極、閘極電極、黏著性擴散障壁、及積體電路中之高折射率光學塗層、腐蝕保護塗層、光催化自清潔玻璃塗層、生物相容性塗層、介電電容器層及閘極介電絕緣膜。介電薄膜亦可用於微電子應用中,諸如,用於動態隨機存取記憶體(DRAM)之高κ介電氧化物,及用於紅外線偵測器及非揮發性鐵電隨機存取記憶體(NV-FeRAM)中之鐵電鈣鈦礦。微電子組件之尺寸之持續減小增大對改良之薄膜技術之需求。
與含錳薄膜之製造相關之技術尤其受到關注。例如,含錳膜已在諸如觸媒、電池、記憶體裝置、顯示器、感測器、及奈米-及微電子裝置之領域中發現許多實際應用。就電子應用而言,元素錳金屬或氮化錳膜可作為致使其等防止銅互連件擴散至底層二氧化矽基板中之障壁層(例如,自形成之擴散障壁層)。儘管可使用基於其他金屬系統之障壁層以抑制銅原子擴散,但該等系統仍存在許多挑戰。例如,氮化鉭在大於約10Å之膜厚度(其中該等膜為連續之厚度)下提供適宜銅擴散障壁,氮化鉭之較薄膜不連續,及因而,不提供足夠的擴散障壁性質。此對於其中需要較薄擴散障壁之較小節裝置(小於~32nm)而言乃是重大障礙。證據顯示氮化錳擴散障壁可為下一代裝置中後段製程銅互連結構中之鉭基擴散障壁之吸引人的替代品。然而,可提供元素錳或氮化錳之高品質及/或高純度膜之錳前驅物之實例有若干。可能
之錳前驅物候選者通常苦於不良蒸氣壓及反應速率、及/或提供具有非所要的形態之含錳膜之問題。因此,十分關注開發具有適用於在氣相沉積製程中作為前驅物材料以製備氮化錳及其他含錳膜之性能特徵之錳錯合物。例如,需要具有改良之性能特徵(例如,熱穩定性、蒸氣壓、沉積速率、及由其製得之膜之障壁性質)之錳前驅物、及自該等前驅物沉積薄膜之方法。
根據一個態樣,提供式I之金屬錯合物:
其中R1、R2、R2'、及R3獨立地選自由氫、烷基、及芳基組成之群;M為選自週期表第7族至第10族之金屬或為銅;及L包含至少一個配位體。
於式I之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式I之金屬錯合物之一些實施例中,R1、R2、R2'、及R3獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、及R3獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。於其他實施例中,R2及R2'各自為甲基。
於式I之金屬錯合物之一些實施例中,L包含至少一個單齒或雙齒配位體。於該等實施例中,L可為(例如)醯胺基亞胺配位體、二氮雜丁二烯(DAD)配位體、脒化物(AMD)配位體或烯丙基配位體。於一或多個實施例中,L為η3-烯丙基配位體。
根據另一個態樣,提供式IA之金屬錯合物:
其中R1、R2、R2'、R3、R4、R5、R6、及R6'獨立地選自由氫、烷基、及芳基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式IA之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式IA之金屬錯合物之一些實施例中,R1、R2、R2'、R3、R4、R5、R6、及R6'獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、R3、R4、R5、R6及R6'獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。
於式IA之金屬錯合物之一些實施例中,R2、R2'、R6、及R6'各自為甲基。
於一些實施例中,式IA之金屬錯合物為使得R1=R5、R2=R6、R2'=R6'、及R3=R4之均配型錯合物。
根據另一個態樣,提供一種式IB之金屬錯合物:
其中R1、R2、R2'、R3、R7、R8、R9、及R10獨立地選自由氫、烷基、及芳基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式IB之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式IB之金屬錯合物之一些實施例中,R1、R2、R2'、R3、R7、R8、R9、及R10獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、R3、R7、R8、R9、及R10獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。
於式IB之金屬錯合物之一些實施例中,R2及R2'各自為甲基。
於式IB之金屬錯合物之一些實施例中,R8及R9各自為氫。
根據另一個態樣,提供式IC之金屬錯合物:
其中R1、R2、R2'、R3、R11、R12、及R13獨立地選自由氫、烷基、及芳基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式IC之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式IC之金屬錯合物之一些實施例中,R1、R2、R2'、R3、R11、R12、及R13獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、R3、R11、R12、及R13獨立地選自由
氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。
於式IC之金屬錯合物之一些實施例中,R2及R2'各自為甲基。
根據另一個態樣,提供式ID之金屬錯合物:
其中R1、R2、R2'、及R3獨立地選自由氫、烷基、及芳基組成之群;R14、R14'、R15、R16、及R16'獨立地選自由氫、烷基、芳基、及矽烷基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式ID之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式ID之金屬錯合物之一些實施例中,R1、R2、R2'、及R3獨立地選自由氫、C1-C4-烷基、C6-C10-芳基組成之群;及R14、R14'、R15、R16、及R16'獨立地選自由氫、C1-C4-烷基、C6-C10-芳基、及三(C1-C4-烷基)矽烷基組成之群。於特定的實施例中,R1、R2、R2'、及R3獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群;及R14、R14'、R15、R16、及R16'獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、苯基、及三甲基矽烷基組成之群。
於式ID之金屬錯合物之一些實施例中,R2及R2'各自為甲基。
於另一個態樣中,提供式I、IA、IB、IC、或ID之金屬錯合物中任一者之溶劑化物。於一些實施例中,該溶劑化物包括配位(拼接)至金屬錯合物之金屬中心之溶劑。於一些實施例中,該溶劑化物為醚溶
劑化物、胺溶劑化物或烴溶劑化物。
本發明技術之其他態樣係關於製備本文所述金屬錯合物一包括式I、IA、IB、IC、或ID之其等之方法、製備該等金屬錯合物之中間物之方法、及使用該等金屬錯合物作為前驅物材料以提供含金屬膜之氣相沉積方法。
圖1說明式I之金屬錯合物之各種不同實施例,其中M為選自週期表第7族至第10族之金屬或為銅。
圖2說明可以任何組合方式鍵結至圖1所說明的式I之金屬錯合物中任一者之配位體L之各種不同實施例。
在描述本發明技術之若干例示性實施例之前,應明瞭該技術不受限於述於以下說明中之建構或製程步驟之詳細內容。本發明技術適用於其他實施例,且能夠以各種方式實踐或實施本發明。亦應明瞭該等金屬錯合物及其他化學化合物可使用具有特定立體化學之結構式說明於本文中。該等說明僅意欲作為實例,而不應被理解為限制所揭示結構於任何特定立體化學。更確切地說,所說明的結構意欲包括所有該等具有所示化學式之金屬錯合物及化學化合物。
於不同態樣中,提供金屬錯合物、製備該等金屬錯合物之方法、及透過氣相沉積製程使用該等金屬錯合物以形成含金屬薄膜之方法。
如本文所用,術語「金屬錯合物」(或更簡單言之,「錯合物」)及「前驅物」可互換使用及係指可藉由諸如(例如)ALD或CVD之氣相沉積製程用於製造含金屬膜之含金屬分子或化合物。金屬錯合物可沉積於、吸附至、分解於、傳遞至、及/或越過基板或其表面,以形成含金屬膜。於一或多個實施例中,本文所述之金屬錯合物為錳錯合物。
如本文所用,術語「含金屬膜」不僅包括較完整定義於下文之元素金屬膜,而且包括包含連同一或多種元素之金屬之膜,例如,金屬氧化物膜、金屬氮化物膜、金屬矽化物膜、及類似物。如本文所用,術語「元素金屬膜」及「純金屬膜」可互換使用及係指由或基本上由純金屬組成之膜。例如,元素金屬膜可包含100%純金屬或元素金屬膜可包含至少約90%、至少約95%、至少約96%、至少約97%、至少約98%、至少約99%、至少約99.9%、或至少約99.99%純金屬及一或多種雜質。除非上下文另作指明,否則術語「金屬膜」應理解為意指元素金屬膜。於一些實施例中,該含金屬膜為元素錳膜。於其他實施例中,該含金屬膜為氧化錳、氮化錳、或矽化錳膜。該等含錳膜可自本文所述之各種不同錳錯合物製得。
如本文所用,術語「氣相沉積製程」係用於表示任何類型之氣相沉積技術,包括(但不限於)CVD及ALD。於各種不同實施例中,CVD可採取習知(即,連續流)CVD、液體注射CVD、或光輔助CVD之形式。CVD亦可採取脈衝技術(即,脈衝CVD)之形式。於其他實施例中,ALD可採取習知(即,脈衝注射)ALD、液體注射ALD、光輔助ALD、電漿輔助ALD、或電漿增強ALD之形式。術語「氣相沉積製程」進一步包括述於Chemical Vapour Deposition:Precursors,Processes,and Applications;Jones,A.C.;Hitchman,M.L.編輯The Royal Society of Chemistry:Cambridge,2009;第1章,第1-36頁中之各種不同氣相沉積技術。
術語「烷基」(單獨或與另一術語組合)係指具有1至約12個碳原子長度之飽和烴鏈,諸如(但不限於)甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、癸基等。該烷基可為直鏈或分支鏈。「烷基」意欲包括烷基之所有結構異構體形式。例如,如本文所用,丙基包括正丙基及異丙基二者;丁基包括正丁基、第二丁基、異丁基及第三丁基。
此外,如本文所用,「Me」係指甲基,「Et」係指乙基,「i-Pr」係指異丙基,「t-Bu」係指第三丁基,及「Np」係指新戊基。於一些實施例中,烷基為C1-C8-或C1-C4-烷基。
關於本文所述之任何金屬錯合物之術語「溶劑化物」係指進一步包含化學計量或非化學計量量的與金屬錯合物締合之溶劑之金屬錯合物。例如,溶劑可共價鍵結至金屬錯合物之金屬中心(例如,呈配位體形式)或以其他方式諸如(例如)藉由非共價分子間力與金屬錯合物締合(例如,呈結晶之溶劑形式)。
本文所述之所有金屬錯合物包含至少一個醯胺基亞胺配位體。在所給定的金屬錯合物包含多於一個醯胺基亞胺配位體(例如,兩個醯胺基亞胺配位體)之情況下,醯胺基亞胺配位體可在每次出現時相同或相異。醯胺基亞胺配位體之特徵為正式陰離子胺基(即,醯胺基)及正式中性亞胺基,如以式II之化合物表示:
其中R1、R2、R2'、及R3獨立地選自由氫、烷基、及芳基組成之群。醯胺基亞胺配位體經醯胺基及亞胺基之氮原子配位至金屬錯合物之金屬中心。如本文進一步所述,該等金屬錯合物除該一或多個醯胺基亞胺配位體外亦可包括結合至金屬中心之其他配位體。儘管不希望受任何特定理論約束,咸信該等醯胺基亞胺配位體將提供醯胺基及β-二亞胺之優點,諸如,所有氮鍵結及金屬中心穩定。同時,認為醯胺基亞胺配位體較不穩定,此歸因於相對微弱的亞胺-金屬鍵之故。於此點上,該等醯胺基亞胺配位體之金屬錯合物為用於在各種不同氣相沉積製程中製造含金屬薄膜之極佳候選者。
因此,根據一個態樣,提供式I之金屬錯合物:
其中R1、R2、R2'、及R3獨立地選自由氫、烷基、及芳基組成之群;M為選自週期表第7族至第10族之金屬或為銅;及L包含至少一個配位體。
於式I之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式I之金屬錯合物之一些實施例中,R1、R2、R2'、及R3獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、及R3獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。於其他實施例中,R2及R2'各自為甲基。
於一些實施例中,R1、R2、R2'、及R3中之兩者、三者或四者獨立地為烷基,諸如(例如)C1-C4-烷基。於一個特定的實施例中,R1、R2、R2'、及R3中之兩者、三者、或四者為甲基。
於一些實施例中,R1及R3中之至少一者為分支鏈烷基,例如,異丙基或第三丁基。於其他實施例中,R1及R3各自獨立地為分支鏈烷基。
於式I之金屬錯合物中,L包含至少一個配位體,該至少一個配位體可為單齒、雙齒、或多齒。因此,L可表示一個、兩個、三個、或更多個配位體,除明確顯示於式I之金屬錯合物中之醯胺基亞胺配位體外,其中各者可在每次出現時相同或相異。除醯胺基亞胺配位體外存於所給定的金屬錯合物中之配位體之數目可且將根據包括(例如)特定配位體之同一性及特定金屬中心之同一性之各種不同因素改變。於
一些實施例中,L可為(例如)醯胺基亞胺配位體(例如,第二醯胺基亞胺配位體)、二氮雜丁二烯(DAD)配位體、脒化物(AMD)配位體、烯丙基配位體、或任何前述之經取代之衍生物。於特定的實施例中,L為η3-烯丙基配位體。於其他實施例中,L為經一或多個氮原子鍵結之配位體。又於其他實施例中,式I之金屬錯合物之金屬中心僅鍵結至氮原子。
根據另一個態樣,提供包含兩個醯胺基亞胺配位體之金屬錯合物,其可以式IA之金屬錯合物表示:
其中R1、R2、R2'、R3、R4、R5、R6、及R6'獨立地選自由氫、烷基、及芳基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式IA之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式IA之金屬錯合物之一些實施例中,R1、R2、R2'、R3、R4、R5、R6、及R6'獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、R3、R4、R5、R6、及R6'獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。
於式IA之金屬錯合物之一些實施例中,R2、R2'、R6、及R6'各自為甲基。
於一些實施例中,式IA之金屬錯合物為使得R1=R5、R2=R6、
R2'=R6’、及R3=R4之均配型金屬錯合物。換言之,金屬錯合物中各醯胺基亞胺配位體相同。
根據另一個態樣,提供包含醯胺基亞胺配位體及二氮雜丁二烯配位體之金屬錯合物,其可以式IB之金屬錯合物表示:
其中R1、R2、R2'、R3、R7、R8、R9、及R10獨立地選自由氫、烷基、及芳基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式IB之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式IB之金屬錯合物之一些實施例中,R1、R2、R2'、R3、R7、R8、R9、及R10獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、R3、R7、R8、R9、及R10獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。
於式IB之金屬錯合物之一些實施例中,R2及R2'各自為甲基。
於式IB之金屬錯合物之一些實施例中,R8及R9各自為氫。
於式IB之金屬錯合物之一些實施例中,R7及R10各自為烷基,例如,C1-C4-烷基。
根據另一個態樣,提供包含醯胺基亞胺配位體及脒化物配位體之金屬錯合物,其可以式IC之金屬錯合物表示:
其中R1、R2、R2'、R3、R11、R12、及R13獨立地選自由氫、烷基、及芳基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式IC之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式IC之金屬錯合物之一些實施例中,R1、R2、R2'、R3、R11、R12、及R13獨立地選自由氫、C1-C4-烷基、及C6-C10-芳基組成之群。於特定的實施例中,R1、R2、R2'、R3、R11、R12、及R13獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群。
於式IC之金屬錯合物之一些實施例中,R2及R2'各自為甲基。
根據另一個態樣,提供包含醯胺基亞胺配位體及η3-烯丙基配位體之金屬錯合物,其可以式ID之金屬錯合物表示:
其中R1、R2、R2'、及R3獨立地選自由氫、烷基、及芳基組成之群;R14、R14'、R15、R16、及R16'獨立地選自由氫、烷基、芳基、及矽烷基組成之群;及M為選自週期表第7族至第10族之金屬或為銅。
於式ID之金屬錯合物之一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。
於式ID之金屬錯合物之一些實施例中,R1、R2、R2'、及R3獨立地選自由氫、C1-C4-烷基、C6-C10-芳基組成之群;及R14、R14'、R15、R16、及R16'獨立地選自由氫、C1-C4-烷基、C6-C10-芳基、及三(C1-C4-烷基)矽烷基組成之群。於特定的實施例中,R1、R2、R2'、及R3獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、及苯基組成之群;及R14、R14'、R15、R16、及R16'獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、苯基、及三甲基矽烷基組成之群。
於式ID之金屬錯合物之一些實施例中,R2及R2'各自為甲基。
於式ID之金屬錯合物之一些實施例中,R14、R14'、R15、R16、及R16'各自為氫,以致η3-烯丙基配位體係未經取代。於其他實施例中,η3-烯丙基配位體係經諸如C1-C4-烷基之烷基單取代(換言之,僅R14、R14'、R15、R16、及R16'中一者為烷基而其餘基團各自為氫)。又於其他實施例中,R14及R16獨立地為矽烷基及R14'及R16'各自為氫。
本文所揭示之任何上述金屬錯合物,包括式I、IA、IB、IC、或ID之金屬錯合物,可呈溶劑化物提供。例如,一或多種溶劑分子可例如藉由配位至金屬中心作為其他一種配位體或多種配位體來與金屬錯合物締合。如熟習此項技藝者所理解,溶劑化物可形成於合成金屬錯合物、分離金屬錯合物、及/或純化金屬錯合物之製程中。於一些實施例中,該溶劑化物為醚溶劑化物、胺溶劑化物或烴溶劑化物。
式I、IA、IB、IC、及ID之金屬錯合物(及其溶劑化形式)可根據所述特定金屬錯合物之同一性藉由任何多種方法來製備。一般而言,該等金屬錯合物可藉由使式II之配位體或其共軛酸與適宜之金屬鹽(例如,第7族至第10族金屬鹽或銅鹽)反應、視情況進一步與其他配位體
或配位體前驅物反應或共反應來製備。如熟習此項技藝者所理解,式II之配位體可藉由利用適宜之鹼(諸如(例如)正丁基鋰或氫化鈉)去質子化式II之配位體之對應共軛酸來製備。適宜之金屬鹽包括(但不限於)金屬鹵化物、金屬假鹵化物、金屬硝酸鹽、金屬硫酸鹽、金屬碳酸鹽、金屬乙酸鹽、金屬烷烴-或芳族烴磺酸鹽(例如,金屬三氟甲磺酸鹽、金屬甲苯磺酸鹽)、金屬醯胺、金屬矽烷基醯胺(例如,雙(三烷基矽烷基醯胺基)金屬,諸如雙(三烷基矽烷基醯胺基)錳)。於一些實施例中,該金屬鹽為第7族至第10族金屬鹽或銅鹽。於特定的實施例中,該金屬鹽為錳鹽,諸如,氯化錳(II)、溴化錳(II)、碘化錳(II)、硝酸錳(II)、乙酸錳(II)、硫酸錳(II)、碳酸錳(II)、過氯酸錳(II)、三氟甲磺酸錳(II)、或雙(三甲基矽烷基醯胺基)錳。
如反應圖1中所說明,雙(三烷基矽烷基醯胺基)金屬係特別用於製備式I、IA、IB、IC、及ID之金屬錯合物;該等金屬鹽一般具有足夠鹼性以容許直接使用式II之配位體之共軛酸(換言之,不需要藉由去質子化對應共軛酸來預形成式II之配位體)。當然及如熟習此項技藝者所理解,鹼性較小的金屬鹽,諸如金屬鹵化物,可與式II之預形成配位體(通常係呈鋰或鈉鹽形式)組合使用。
反應圖1
本文所述之金屬錯合物一般係於存在一或多種溶劑下合成。適宜溶劑之實例包括(但不限於)醚(例如,乙醚、四氫呋喃、1,2-二甲氧基乙烷、1,4-二噁烷、及類似物)及芳族烴(例如,苯、甲苯、及類似物)。
本文所述之金屬錯合物可自形成其等及視情況利用相關技藝中已知的標準技術純化之反應混合物分離。該等技術包括(但不限於)離心、過濾、萃取、再結晶、層析、昇華、蒸餾、及類似技術。根據製
備特定金屬錯合物之方式、用於錯合反應中之溶劑之特性、及分離及純化之方法,金屬錯合物可呈溶劑化形式分離。例如,金屬錯合物可呈任何上述溶劑之溶劑化物形式、或呈於錯合反應中形成之任何副產物之溶劑化物形式分離。
配位體及配位體前驅物(例如,醯胺基亞胺、胺基亞胺、二氮雜丁二烯、脒、脒化物、及烯丙基配位體或相關配位體前驅物,諸如,顯示於反應圖1中之彼等)可於市面購得或可依照已知之程序(例如,Inorg.Chem. 2009,48,7639-7644)、或該等已知之程序之簡單修飾(其完全係在熟習此項技藝者之技藝範圍內)來合成。
圖1說明式I之金屬錯合物之各種不同實施例,其中M為選自週期表第7族至第10族之金屬或為銅。於一些實施例中,M係選自由錳、鈷、鎳、及銅組成之群。於特定的實施例中,M為錳。圖2說明可鍵結至任何圖1所說明之式I金屬錯合物(以任何組合形式)以便提供式IA、IB、IC、及ID之金屬錯合物之配位體L之各種不同實施例。
本文所提供之金屬錯合物可用於製備具有光滑形態之含金屬膜(諸如(例如)元素錳及氮化錳膜)。因此,根據另一個態樣,提供一種藉由氣相沉積製程來形成含金屬膜之方法,該方法使用至少一種本文所揭示之金屬錯合物,諸如,式I、IA、IB、IC、ID之彼等、或其溶劑化物。該成膜方法可包括(例如)(1)使金屬錯合物汽化及(2)傳遞及/或暴露金屬錯合物於基板表面或使金屬錯合物越過基板表面(及/或於基板表面上分解該種金屬錯合物)。
多種基板可用於本文所揭示之沉積方法中。例如,如本文所揭示之金屬錯合物可傳遞至、越過、或沉積於多種基板或其表面,諸如(但不限於)矽、結晶矽、Si(100)、Si(111)、氧化矽、玻璃、應變矽、絕緣體上覆矽(SOI)、摻雜型矽或矽氧化物(例如,摻碳型矽氧化物)、氮化矽、鍺、砷化鎵、鉭、氮化鉭、鋁、銅、釕、鈦、氮化鈦、鎢、
氮化鎢、及任何數目之通常會在奈米尺寸裝置製造製程(例如,半導體製造製程)中遇到的其他基板。如熟習此項技藝者所理解,基板可暴露於預處理製程以拋光、蝕刻、還原、氧化、羥基化、退火及/或燒製基板表面。於一或多個實施例中,基板表面包含氫終止表面。
於某些實施例中,可將金屬錯合物溶解於適宜之溶劑(諸如烴或胺溶劑)中以利於氣相沉積製程。適宜之烴溶劑包括(但不限於)脂族烴,諸如己烷、庚烷及壬烷;芳族烴,諸如甲苯及二甲苯;及脂族及環狀醚,諸如二乙二醇二甲醚、三乙二醇二甲醚、及四乙二醇二甲醚。適宜胺溶劑之實例包括(但不限於)辛胺及N,N-二甲基十二烷胺。例如,可將金屬錯合物溶解於甲苯中以獲得具有自約0.05M至約1M濃度之溶液。
於另一個實施例中,該至少一種金屬錯合物可「無溶劑」(未經載氣稀釋)地傳遞至基板表面。
於一個實施例中,該氣相沉積製程為化學氣相沉積。
於另一個實施例中,該氣相沉積製程為原子層沉積。
ALD及CVD方法包括ALD及CVD製程之各種不同類型,諸如(但不限於)連續或脈衝注射製程、液體注射製程、光輔助製程、電漿輔助、及電漿增強製程。出於清晰性之目的,本發明技術之方法具體包括直接液體注射製程。例如,於直接液體注射CVD(「DLI-CVD」)中,固體或液體金屬錯合物可溶解於適宜溶劑中及將由其形成之溶液注射至汽化室中作為使金屬錯合物汽化之手段。接著將經汽化之金屬錯合物輸送/傳遞至基板表面。一般而言,DLI-CVD可尤其用於其中金屬錯合物展現相對低揮發性或以其他方式難以汽化之其等實例中。
於一個實施例中,使用習知或脈衝CVD以形成含金屬膜,從而使該至少一種金屬錯合物汽化及/或越過基板表面。關於習知之CVD製程請參見:例如,Smith,Donald(1995).Thin-Film Deposition:Principles and Practice.McGraw-Hill。
於一個實施例中,用於本文所揭示之金屬錯合物之CVD生長條件包括(但不限於):
a.基板溫度:50至600℃
b.蒸發器溫度(金屬前驅物溫度):0至200℃
c.反應器壓力:0至100托(Torr)
d.氬氣或氮氣載氣流速:0至500sccm
e.氧氣流速:0至500sccm
f.氫氣流速:0至500sccm
g.運行時間:將根據所欲膜厚度改變
於另一個實施例中,利用光輔助CVD藉由使至少一種本文所揭示金屬錯合物汽化及/或越過基板表面來形成含金屬膜。
於另一個實施例中,利用習知(即,脈衝注射)ALD藉由使至少一種本文所揭示金屬錯合物汽化及/或越過基板表面來形成含金屬膜。關於習知ALD製程請參見:例如,George S.M.等人.J.Phys.Chem.,1996,100,13121-13131。
於另一個實施例中,利用液體注射ALD藉由使至少一種本文所揭示金屬錯合物汽化及/或越過基板表面來形成含金屬膜,其中至少一種金屬錯合物係相對由鼓泡器所抽取蒸汽藉由直接液體注射傳遞至反應室。關於液體注射ALD製程請參見:例如,Potter R.J.等人,Chem.Vap.Deposition,2005,11(3),159-169。
用於本文所揭示金屬錯合物之ALD生長條件之實例包括(但不限於):
a.基板溫度:0至400℃
b.蒸發器溫度(金屬前驅物溫度):0至200℃
c.反應器壓力:0至100托
d.氬氣或氮氣載氣流速:0至500sccm
e.反應性氣體流速:0至500sccm
f.脈衝順序(金屬錯合物/沖洗/反應性氣體/沖洗):將根據室尺寸改變
g.循環個數:將根據所欲膜厚度改變
於另一個實施例中,利用光輔助ALD藉由使至少一種本文所揭示金屬錯合物汽化及/或越過基板表面來形成含金屬膜。關於光輔助ALD製程請參見:例如,美國專利案第4,581,249號。
於另一個實施例中,利用電漿輔助ALD藉由使至少一種本文所揭示金屬錯合物汽化及/或越過基板表面來形成含金屬膜。
於另一個實施例中,提供一種在基板表面上形成含金屬膜之方法,其包括:於ALD製程中,將基板暴露於根據一或多個本文所述實施例之氣相金屬錯合物,使得在包含該金屬錯合物之表面上形成層,該金屬錯合物以金屬中心(例如,錳)鍵結至該表面;於ALD製程中,將具有鍵結金屬錯合物之基板暴露於共反應物,使得該鍵結的金屬錯合物與共反應物之間發生交換反應,因而使該鍵結的金屬錯合物解離且於基板之表面上製得元素金屬之第一層;及依序重複ALD製程及處理。
選擇反應時間、溫度及壓力以建立金屬-表面相互作用及在基板之表面上獲得層。將基於金屬錯合物之性質來選擇用於ALD反應之反應條件。沉積可在大氣壓下進行,但更通常係在減壓下進行。金屬錯合物之蒸氣壓應足夠低以在該等應用中實用。基板溫度應足夠高以維持表面處金屬原子之間之鍵結完整且足以防止氣態反應物熱分解。然而,該基板溫度亦應足夠高以維持源材料(即,反應物)呈氣相且足以提供足夠的活化能用於表面反應。適宜之溫度根據包括使用的特定金屬錯合物及壓力之各種不同參數改變。可利用相關技藝中已知的方法來評估用於本文所揭示ALD沉積方法中之特定金屬錯合物之性質,從
而容許選擇適用於反應之溫度及壓力。一般而言,較低的分子量及可增加配位體球體之旋轉熵之官能基之存在獲得於典型傳遞溫度下及增加之蒸氣壓下產生液體之熔點。
用於沉積方法中之最佳化金屬錯合物將具有所有針對足夠的蒸氣壓、在所選定的基板溫度下之足夠的熱穩定性及足以基板之表面上產生反應而在薄膜中不含非所要雜質之反應性之要求。足夠的蒸氣壓可確保源化合物之分子以足可達成完全自飽和反應之濃度存於基板表面。足夠的熱穩定性可確保源化合物將不進行會在薄膜中產生雜質之熱分解。
因此,用於該等方法中之本文所揭示之金屬錯合物可為液態、固態、或氣態。通常,該等金屬錯合物在環境溫度及足以容許蒸氣持續輸送至製程室之蒸氣壓下為液態或固態。
於一個實施例中,元素金屬、金屬氮化物、金屬氧化物、或金屬矽化物膜可藉由單獨或與共反應物組合之形式傳遞至少一種本文所揭示之金屬錯合物以沉積來形成。就此而言,該共反應物可單獨或以與至少一種金屬錯合物組合形式沉積或傳遞至或越過基板表面。如所可輕易理解,使用的特定共反應物將決定獲得含金屬膜之類型。該等共反應物之實例包括(但不限於)氫、氫電漿、氧、空氣、水、醇、H2O2、N2O、氨、肼、硼烷、矽烷、臭氧、或其中任何兩者或更多者之組合。適宜醇之實例包括(但不限於)甲醇、乙醇、丙醇、異丙醇、第三丁醇、及類似物。適宜硼烷之實例包括(但不限於)氫負(即,還原性)硼烷,諸如硼烷、二硼烷、三硼烷及類似物。適宜矽烷之實例包括(但不限於)氫負矽烷,諸如矽烷、二矽烷、三矽烷、及類似物。適宜肼之實例包括(但不限於)肼(N2H4)、視需要經一或多個烷基取代之肼(即,經烷基取代之肼)(諸如甲基肼、第三丁基肼、N,N-或N,N'-二甲基肼)、視需要經一或多個芳基取代之肼(即,經芳基取代之肼)(諸
如苯基肼)、及類似物。
於一個實施例中,本文所揭示之金屬錯合物係以與含氧共反應物之脈衝交替的脈衝方式傳遞至基板表面以提供金屬氧化物膜。該等含氧共反應物之實例包括(但不限於)H2O、H2O2、O2、臭氧、空氣、i-PrOH、t-BuOH、或N2O。
於其他實施例中,共反應物包含還原劑,諸如氫。於該等實施例中,獲得元素金屬膜。於特定的實施例中,該元素金屬膜係由純金屬組成或基本上由其組成。該純金屬膜可包含多於約80%、85%、90%、95%、或98%金屬。於甚至更特定實施例中,該元素金屬膜為錳膜。
於其他實施例中,共反應物係用於藉由單獨或與諸如(但不限於)氨、肼、及/或其他含氮化合物(例如,胺)之共反應物組合形式傳遞至少一種本文所揭示之金屬錯合物至反應室以沉積來形成金屬氮化物膜。可使用複數種該等共反應物。於其他實施例中,該金屬氮化物膜為式MnNx之錳氮化物膜,其中變量「x」在約0.1、0.2、或0.25至約1、2、3、或4範圍內、或在約0.2至約2範圍內、或在約0.25至約1範圍內。
於另一個實施例中,可藉由使至少一種本文所揭示之金屬錯合物與包含與該至少一種本文所揭示之金屬錯合物之金屬不同之金屬之第二金屬錯合物之組合汽化(但不一定同時)之氣相沉積製程來形成混合金屬膜。
於一個特定的實施例中,本發明技術之方法係用於諸如矽晶片之基板上之諸如用於記憶及邏輯應用之動態隨機存取記憶體(DRAM)及互補金屬氧化物半導體(CMOS)的應用。
任何本文所揭示錳錯合物可用於製造錳金屬、氧化錳、氮化錳、及/或矽化錳之薄膜。該等膜可用作氧化觸媒、陽極材料(例如,
SOFC或LIB陽極)、導電層、感測器、擴散障壁/塗層、超級-及非超導材料/塗層、摩擦學塗層、及/或保護塗層。熟習此項技藝者應明瞭膜性質(例如,導電性)將取決於諸多因素,諸如用於沉積之金屬、共反應物及/或共錯合物之存在或不存在、所建立膜之厚度、於生長及接續處理期間所使用的參數及基板
於特定的實施例中,沉積的元素錳或氮化錳膜可用作後段製程銅互連中替代目前使用的氮化鉭之替代擴散障壁。本文所述之沉積方法可與氮化鉭之沉積整合以產生摻錳型氮化鉭或經氮化錳摻雜之鉭。錳可與介電底層反應以形成矽酸錳作為障壁。在不受任何特定操作理論約束下,咸信氮化錳不僅為擴散障壁而且可促進銅與介電質之間之黏著。因此,於一些實施例中,該等方法進一步包括沉積銅於含錳膜上。
本說明書中提及「一個實施例」、「某些實施例」、「一或多個實施例」或「一實施例」時意指針對該實施例所述之特定特徵、結構、材料、或特性包含於本發明技術之至少一個實施例中。因此,在本說明書中不同位置出現片語諸如「於一或多個實施例中」、「於某些實施例中」、「於一個實施例中」或「於一實施例中」不一定係指本發明技術之相同實施例。此外,該等特定特徵、結構、材料、或特性可以任何適宜方式組合於一或多個實施例中。
雖然本文中已參照特定實施例描述本發明技術,但應明瞭該等實施例僅例示本發明技術之原理及應用。熟習此項技藝者當明瞭可在不脫離本發明技術之精神及範疇下對本發明技術之方法及裝置做出各種不同修改及改變。因此,希望本發明技術包括屬於隨附申請專利範圍及其等效物之範疇之修改及改變。將參照以下實例更輕易地明瞭經如此大致描述之本發明技術,其係以說明方式提供,而非意圖具限制性。
除非另外註明,否則所有合成處理係在惰性氛圍(例如,經純化之氮氣或氬氣)下利用用於處理相關技藝中已知之空氣敏感材料之技術(例如,Schlenk技術)來進行。
實例1A:錯合物1(式IA之均配型錯合物)之製法
藉由轉移套管將(t-Bu)NHCMe2CH=N(t-Bu)(10.6g,0.053mol)添加至含雙(三甲基矽烷基醯胺基)錳(10g,0.0266mol)之甲苯(200mL)溶液。使所得混合物回流24小時。接著於減壓下移除溶劑及六甲基二矽氮烷副產物以提供錯合物1,其可進一步藉由於減壓下之蒸餾或昇華來純化。
配位體前驅物(t-Bu)NHCMe2CH=N(t-Bu)可藉由異丁醛(藉由(例如)1,4-二噁烷-溴錯合物)之α-溴化作用且接著與過量的第三丁胺之THF溶液反應製得。利用標準技術分離粗製配位體前驅物及純化。
實例1B:錯合物2(式IA之雜配型錯合物)之製法
藉由轉移套管將(t-Bu)NHCMe2CH=N(t-Bu)(5.3g,0.0266mol)添加至含雙(三甲基矽烷基醯胺基)錳(10g,0.0266mol)之甲苯(200mL)溶液。使所得混合物回流24小時。接著於減壓下移除溶劑及六甲基二
矽氮烷副產物。接著將所得中間物溶解於甲苯中並藉由(i-Pr)NHCMe2CH=N(t-Bu)(4.9g,0.0266mol))處理,再回流24小時。接著於減壓下移除溶劑及六甲基二矽氮烷副產物以提供錯合物2,其可進一步藉由於減壓下之蒸餾或昇華來純化。
配位體前驅物(i-Pr)NHCMe2CH=N(t-Bu)可藉由異丁醛(藉由(例如)1,4-二噁烷-溴化物錯合物)之α-溴化作用且接著與過量的異丙基胺之THF溶液反應製得。藉由過量的第三丁基胺之THF溶液之接續處理可提供粗製配位體前驅物,其利用標準技術加以分離及純化。
實例2:錯合物3(式IB之錯合物)之製法
藉由轉移套管將(t-Bu)NHCMe2CH=N(t-Bu)配位體(5.3g,0.0266mol)添加至含雙(三甲基矽烷基醯胺基)錳(10g,0.0266mol)之甲苯溶液。使所得混合物回流24小時。接著於減壓下移除溶劑及六甲基二矽氮烷副產物。於氬氣下,將中間物溶解於THF(100mL)中及添加含Li[(t-Bu)N=CHCH=N(t-Bu)](4.7g,0.027mol;藉由在THF中之(t-Bu)N=CHCH=N(t-Bu)及新切得的Li金屬製得)之THF(100mL)溶液。於室溫下攪拌該混合物過夜。接著於減壓下移除溶劑及六甲基二矽疊氮化鋰副產物以提供錯合物3,其可進一步藉由於減壓下之蒸餾或昇華來純化。
實例3:錯合物4(式IC之錯合物)之製法
藉由轉移套管將(t-Bu)NHCMe2CH=N(t-Bu)配位體(5.3g,0.0266mol)添加至含雙(三甲基矽烷基醯胺基)錳(10g,0.0266mol)之甲苯(200mL)溶液。使所得混合物回流24小時。接著於減壓下移除溶劑及六甲基二矽氮烷副產物。接著將所得中間物溶解於甲苯中並藉由(i-Pr)N=C(Me)NH(i-Pr)(3.8g,0.027mol)處理,再回流24小時。接著於減壓下移除溶劑及六甲基二矽氮烷副產物以提供錯合物4,其可進一步藉由於減壓下之蒸餾或昇華來純化。
實例4:錯合物5(式ID之錯合物)之製法
將2當量的K[CH2C(CH3)CH2]或[CH2C(CH3)CH2]MgBr之THF或乙醚溶液添加至含氯化錳(1當量)之THF懸浮液(-78℃)。攪拌該混合物若干小時直到固體溶解及觀察到顏色改變。接著,藉由針筒添加1當量的(t-Bu)NHCMe2CH=N(t-Bu)配位體及讓該混合物慢慢地升至室溫。接著於減壓下移除溶劑並將殘餘物萃取至己烷中。然後,藉由套管過濾該混合物,且接著於減壓下移除溶劑以提供錯合物5,其可進一步藉由於減壓下之蒸餾或昇華來純化。
實例5:元素錳金屬膜之沉積
首先,可將基板表面置於原子層沉積室中。接著使基板表面與
錳前驅物(例如,錳錯合物1至5中之一者)接觸。接著從反應室沖洗過量的未反應之錳前驅物。接著,讓氫氣流動進入至該室中,到達基板表面。結合至基板表面之錳前驅物進行還原,從而留下基本上由錳金屬組成之錳膜。接著從該室沖洗過量的錳前驅物。可重複該製程直到達成所欲厚度之膜。
實例6:氮化錳膜之沉積
首先,可將基板表面置於原子層沉積室中。接著使基板表面與錳前驅物(例如,錳錯合物1至5中之一者)接觸。接著從反應室沖洗過量的未反應之錳前驅物。然後,讓氨流動進入至該室中,到達基板表面。結合至基板表面之錳前驅物與氨氣反應,從而留下包含氮化錳之膜。接著從該室沖洗過量的錳前驅物。可重複該製程直到達成所欲厚度之膜。
本說明書中提及的所有公開案、專利申請案、已頒佈之專利案及其他文獻係以引用之方式併入本文中,如同各個別的公開案、專利申請案、已頒佈之專利案、或其他文獻明確地及個別地表明其全文以引用方式併入。包含於以引用方式併入的內容中之定義在其與本發明中之定義矛盾時被排除。
詞語「包括」、「含有」、及「包含」理解為包含但非排他性。
Claims (52)
- 一種式I之金屬錯合物,
- 如請求項1之金屬錯合物,其中R1、R2、R2'及R3係獨立地選自由C1-C4-烷基及C6-C10芳基組成之群。
- 如請求項1或2之金屬錯合物,其中R1、R2、R2'及R3係獨立地選自由甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群。
- 如請求項1或2之金屬錯合物,其中R2及R2'各自為甲基。
- 如請求項1或2之金屬錯合物,其中L包含至少一個單齒或雙齒配位體。
- 如請求項1或2之金屬錯合物,其中L包含η3-烯丙基配位體。
- 一種式IB之金屬錯合物,
- 如請求項7之金屬錯合物,其中M係選自由錳、鈷、鎳、及銅組成之群。
- 如請求項7或8之金屬錯合物,其中R1、R2、R2'及R3係獨立地選自由C1-C4-烷基及C6-C10-芳基組成之群;且R7、R8、R9及R10係獨立地選自由氫、C1-C4-烷基及C6-C10-芳基組成之群。
- 如請求項7或8之金屬錯合物,其中R1、R2、R2'及R3係獨立地選自由甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群;且R7、R8、R9及R10係獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群。
- 如請求項7或8之金屬錯合物,其中R2及R2'各自為甲基。
- 如請求項7或8之金屬錯合物,其中R8及R9各自為氫。
- 一種式IC之金屬錯合物,
- 如請求項13之金屬錯合物,其中M係選自由錳、鈷、鎳及銅組成之群。
- 如請求項13或14之金屬錯合物,其中R1、R2、R2'、R3、R11、R12及R13係獨立地選自由氫、C1-C4-烷基及C6-C10-芳基組成之群。
- 如請求項13或14之金屬錯合物,其中R1、R2、R2'、R3、R11、R12及R13係獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群。
- 如請求項13或14之金屬錯合物,其中R2及R2'各自為甲基。
- 一種式ID之金屬錯合物,
- 如請求項18之金屬錯合物,其中M係選自由錳、鈷、鎳及銅組成之群。
- 如請求項18或19之金屬錯合物,其中:R1、R2、R2'、及R3係獨立地選自由C1-C4-烷基及C6-C10-芳基組成之群;及R14、R14'、R15、R16及R16'係獨立地選自由氫、C1-C4-烷基、C6-C10-芳基及三(C1-C4-烷基)矽烷基組成之群。
- 如請求項18或19之金屬錯合物,其中:R1、R2、R2'及R3係獨立地選自由甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群;及R14、R14'、R15、R16及R16'係獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、苯基及三甲基矽烷基組成之群。
- 如請求項18或19之金屬錯合物,其中R2及R2'各自為甲基。
- 一種藉由氣相沉積製程形成含金屬膜之方法,該方法包含使至少一種結構對應於下式I之金屬錯合物汽化:
- 如請求項23之方法,其中M係選自由錳、鈷、鎳及銅組成之群。
- 如請求項23或24之方法,其中R1及R3係獨立地選自由氫、C1-C4-烷基及C6-C10-芳基組成之群;且R2及R2'係獨立地選自由C1-C4-烷基及C6-C10-芳基組成之群。
- 如請求項23或24之方法,其中R1及R3係獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群;且R2及R2'係獨立地選自由甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群。
- 如請求項23或24之方法,其中R2及R2'各自為甲基。
- 如請求項23或24之方法,其中L包含至少一個單齒或雙齒配位體。
- 如請求項23或24之方法,其中L包含η3-烯丙基配位體。
- 一種藉由氣相沉積製程形成含金屬膜之方法,該方法包含使至少一種結構對應於下式IB之金屬錯合物汽化:
- 如請求項30之方法,其中M係選自由錳、鈷、鎳及銅組成之群。
- 如請求項30或31之方法,其中R1、R2、R2'、R3、R7、R8、R9及R10獨立地選自由氫、C1-C4-烷基及C6-C10-芳基組成之群。
- 如請求項30或31之方法,其中R1、R2、R2'、R3、R7、R8、R9及 R10獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群。
- 如請求項30或31之方法,其中R2及R2'各自為甲基。
- 如請求項30或31之方法,其中R8及R9各自為氫。
- 一種藉由氣相沉積製程形成含金屬膜之方法,該方法包含使至少一種結構對應於如請求項13或14之金屬錯合物汽化。
- 一種藉由氣相沉積製程形成含金屬膜之方法,該方法包含使至少一種結構對應於下式ID之金屬錯合物汽化:
- 如請求項37之方法,其中M係選自由錳、鈷、鎳及銅組成之群。
- 如請求項37或38之方法,其中R1、R2、R2'及R3獨立地選自由氫、C1-C4-烷基及C6-C10-芳基組成之群;及R14、R14'、R15、R16及R16'獨立地選自由氫、C1-C4-烷基、C6-C10-芳基及三(C1-C4-烷基)矽烷基組成之群。
- 如請求項37或38之方法,其中R1、R2、R2'及R3獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基及苯基組成之群;及 R14、R14'、R15、R16及R16'獨立地選自由氫、甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基、苯基及三甲基矽烷基組成之群。
- 如請求項37或38之方法,其中R2及R2'各自為甲基。
- 如請求項23、24、30、31、37及38中任一項之方法,其中該氣相沉積製程為化學氣相沉積。
- 如請求項42之方法,其中該化學氣相沉積為脈衝化學氣相沉積或連續流化學氣相沉積。
- 如請求項42之方法,其中該化學氣相沉積為液體注射化學氣相沉積。
- 如請求項23、24、30、31、37及38中任一項之方法,其中該氣相沉積製程為原子層沉積。
- 如請求項45之方法,其中該原子層沉積為液體注射原子層沉積或電漿增強原子層沉積。
- 如請求項23、24、30、31、37及38中任一項之方法,其中該至少一種金屬錯合物係以與氧來源之脈衝交替的脈衝方式傳遞至基板,以形成金屬氧化物膜。
- 如請求項47之方法,其中該氧來源係選自由H2O、空氣、O2及臭氧組成之群。
- 如請求項23、24、30、31、37及38中任一項之方法,其進一步包含使選自氫、氫電漿、氧、空氣、水、氨、肼、硼烷、矽烷、臭氧及其組合所組成之群之共反應物汽化。
- 如請求項23、24、30、31、37及38中任一項之方法,其進一步包含使作為共反應物之肼汽化。
- 如請求項50之方法,其中該肼係N2H4或N,N-二甲基肼。
- 如請求項23、24、30、31、37及38中任一項之方法,其中該方 法係用於動態隨機存取記憶體(DRAM)及互補金屬氧化物半導體(CMOS)的應用。
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Families Citing this family (287)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US10155783B2 (en) | 2013-05-28 | 2018-12-18 | Merck Patent Gmbh | Manganese complexes and use thereof for preparing thin films |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
WO2015138390A1 (en) | 2014-03-13 | 2015-09-17 | Sigma-Aldrich Co. Llc | Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
JP6465699B2 (ja) * | 2015-03-06 | 2019-02-06 | 株式会社Adeka | ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物 |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
KR102030104B1 (ko) * | 2016-09-09 | 2019-10-08 | 메르크 파텐트 게엠베하 | 알릴 리간드를 포함하는 금속 착화합물 |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) * | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
WO2018187781A2 (en) | 2017-04-07 | 2018-10-11 | Applied Materials, Inc. | Metal precursors with modified diazabutadiene ligands for cvd and ald applications and methods of use |
US10106893B1 (en) | 2017-04-07 | 2018-10-23 | Applied Materials, Inc. | Iridium precursors for ALD and CVD thin film deposition and uses thereof |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR101962355B1 (ko) | 2017-09-26 | 2019-03-26 | 주식회사 한솔케미칼 | 열적 안정성 및 반응성이 우수한 기상 증착 전구체 및 이의 제조방법 |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
EP3498721A1 (de) | 2017-12-15 | 2019-06-19 | Umicore Ag & Co. Kg | Metallkomplexe mit triazenidoliganden und deren verwendungen zur abscheidung von metallen aus der gasphase |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
TWI728456B (zh) | 2018-09-11 | 2021-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 相對於基板的薄膜沉積方法 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN118422165A (zh) | 2019-08-05 | 2024-08-02 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
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US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
CN110804731B (zh) * | 2019-11-04 | 2020-11-06 | 江南大学 | 一种原子层沉积技术生长MnxN薄膜的方法 |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
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CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
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JP2021111783A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | チャネル付きリフトピン |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
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KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
JP2021177545A (ja) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
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KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
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US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
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USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103298971A (zh) * | 2010-11-17 | 2013-09-11 | Up化学株式会社 | 基于二氮杂二烯的金属化合物、其生产方法和使用其形成薄膜的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07107190B2 (ja) | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
CA2274817A1 (en) * | 1997-01-14 | 1998-07-16 | E.I. Du Pont De Nemours And Company | Polymerization of olefins |
US9255327B2 (en) * | 2010-08-24 | 2016-02-09 | Wayne State University | Thermally stable volatile precursors |
WO2012060428A1 (ja) | 2010-11-02 | 2012-05-10 | 宇部興産株式会社 | (アミドアミノアルカン)金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法 |
CN102250152B (zh) | 2011-05-26 | 2014-04-16 | 中山大学 | 胺基亚胺镍乙烯聚合催化剂的制备方法和应用 |
WO2012176989A1 (en) | 2011-06-24 | 2012-12-27 | Up Chemical Co., Ltd. | A diamine compound or its salt, preparing method of the same, and uses of the same |
-
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