TWI613288B - 放熱構造體 - Google Patents
放熱構造體 Download PDFInfo
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- TWI613288B TWI613288B TW102121234A TW102121234A TWI613288B TW I613288 B TWI613288 B TW I613288B TW 102121234 A TW102121234 A TW 102121234A TW 102121234 A TW102121234 A TW 102121234A TW I613288 B TWI613288 B TW I613288B
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- heat
- thermally conductive
- resin composition
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- cured product
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- 239000011342 resin composition Substances 0.000 claims description 85
- 239000011347 resin Substances 0.000 claims description 73
- 229920005989 resin Polymers 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 51
- 239000011231 conductive filler Substances 0.000 claims description 36
- 238000012546 transfer Methods 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 239000004925 Acrylic resin Substances 0.000 claims description 11
- 229920000178 Acrylic resin Polymers 0.000 claims description 11
- 229920001451 polypropylene glycol Polymers 0.000 claims description 11
- 230000020169 heat generation Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 6
- 239000000047 product Substances 0.000 description 38
- 239000000203 mixture Substances 0.000 description 21
- -1 cyclic siloxane Chemical class 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 239000003054 catalyst Substances 0.000 description 14
- 238000001723 curing Methods 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 230000000737 periodic effect Effects 0.000 description 13
- 239000000843 powder Substances 0.000 description 13
- 239000000945 filler Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910000420 cerium oxide Inorganic materials 0.000 description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000018044 dehydration Effects 0.000 description 7
- 238000006297 dehydration reaction Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910001035 Soft ferrite Inorganic materials 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000003963 antioxidant agent Substances 0.000 description 6
- 230000003078 antioxidant effect Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000004014 plasticizer Substances 0.000 description 6
- 230000008439 repair process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 5
- 125000003342 alkenyl group Chemical group 0.000 description 5
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 5
- 239000012024 dehydrating agents Substances 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910002058 ternary alloy Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- BKUSIKGSPSFQAC-RRKCRQDMSA-N 2'-deoxyinosine-5'-diphosphate Chemical compound O1[C@H](CO[P@@](O)(=O)OP(O)(O)=O)[C@@H](O)C[C@@H]1N1C(NC=NC2=O)=C2N=C1 BKUSIKGSPSFQAC-RRKCRQDMSA-N 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical group C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910018605 Ni—Zn Inorganic materials 0.000 description 3
- 229920002367 Polyisobutene Polymers 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003463 adsorbent Substances 0.000 description 3
- UJOHNXQDVUADCG-UHFFFAOYSA-L aluminum;magnesium;carbonate Chemical compound [Mg+2].[Al+3].[O-]C([O-])=O UJOHNXQDVUADCG-UHFFFAOYSA-L 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004927 clay Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 238000013038 hand mixing Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- MHVJRKBZMUDEEV-UHFFFAOYSA-N (-)-ent-pimara-8(14),15-dien-19-oic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)C=C1CC2 MHVJRKBZMUDEEV-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- OWXJKYNZGFSVRC-NSCUHMNNSA-N (e)-1-chloroprop-1-ene Chemical compound C\C=C\Cl OWXJKYNZGFSVRC-NSCUHMNNSA-N 0.000 description 2
- XWJBRBSPAODJER-UHFFFAOYSA-N 1,7-octadiene Chemical compound C=CCCCCC=C XWJBRBSPAODJER-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- ZUGAOYSWHHGDJY-UHFFFAOYSA-K 5-hydroxy-2,8,9-trioxa-1-aluminabicyclo[3.3.2]decane-3,7,10-trione Chemical compound [Al+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ZUGAOYSWHHGDJY-UHFFFAOYSA-K 0.000 description 2
- YPIFGDQKSSMYHQ-UHFFFAOYSA-N 7,7-dimethyloctanoic acid Chemical compound CC(C)(C)CCCCCC(O)=O YPIFGDQKSSMYHQ-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- QUUCYKKMFLJLFS-UHFFFAOYSA-N Dehydroabietan Natural products CC1(C)CCCC2(C)C3=CC=C(C(C)C)C=C3CCC21 QUUCYKKMFLJLFS-UHFFFAOYSA-N 0.000 description 2
- NFWKVWVWBFBAOV-UHFFFAOYSA-N Dehydroabietic acid Natural products OC(=O)C1(C)CCCC2(C)C3=CC=C(C(C)C)C=C3CCC21 NFWKVWVWBFBAOV-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 239000005909 Kieselgur Substances 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 2
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000010425 asbestos Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 239000000440 bentonite Substances 0.000 description 2
- 229910000278 bentonite Inorganic materials 0.000 description 2
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 229910052570 clay Inorganic materials 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- NFWKVWVWBFBAOV-MISYRCLQSA-N dehydroabietic acid Chemical compound OC(=O)[C@]1(C)CCC[C@]2(C)C3=CC=C(C(C)C)C=C3CC[C@H]21 NFWKVWVWBFBAOV-MISYRCLQSA-N 0.000 description 2
- 229940118781 dehydroabietic acid Drugs 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000010459 dolomite Substances 0.000 description 2
- 229910000514 dolomite Inorganic materials 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- MXYATHGRPJZBNA-KRFUXDQASA-N isopimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@@](C=C)(C)CC2=CC1 MXYATHGRPJZBNA-KRFUXDQASA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 229960002969 oleic acid Drugs 0.000 description 2
- 235000021313 oleic acid Nutrition 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052895 riebeckite Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PYOKUURKVVELLB-UHFFFAOYSA-N trimethyl orthoformate Chemical compound COC(OC)OC PYOKUURKVVELLB-UHFFFAOYSA-N 0.000 description 2
- QEEPNARXASYKDD-UHFFFAOYSA-J tris(7,7-dimethyloctanoyloxy)stannyl 7,7-dimethyloctanoate Chemical compound [Sn+4].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O QEEPNARXASYKDD-UHFFFAOYSA-J 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- MHVJRKBZMUDEEV-APQLOABGSA-N (+)-Pimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@](C=C)(C)C=C2CC1 MHVJRKBZMUDEEV-APQLOABGSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- CWZQYRJRRHYJOI-UHFFFAOYSA-N 1,1,1-trimethoxydecane Chemical compound CCCCCCCCCC(OC)(OC)OC CWZQYRJRRHYJOI-UHFFFAOYSA-N 0.000 description 1
- FBJUQTUWWCVIDH-UHFFFAOYSA-N 1,1-dimethoxyundecane Chemical compound CCCCCCCCCCC(OC)OC FBJUQTUWWCVIDH-UHFFFAOYSA-N 0.000 description 1
- HBWHSLQSROGCQF-UHFFFAOYSA-N 1,2,2,3,3-pentamethylpiperazine Chemical compound CC1(C(N(CCN1)C)(C)C)C HBWHSLQSROGCQF-UHFFFAOYSA-N 0.000 description 1
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- RXDAPJJFRLSRPX-UHFFFAOYSA-N 2,3-dimethoxypropan-1-ol Chemical compound COCC(CO)OC RXDAPJJFRLSRPX-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- UZZYXZWSOWQPIS-UHFFFAOYSA-N 3-fluoro-5-(trifluoromethyl)benzaldehyde Chemical compound FC1=CC(C=O)=CC(C(F)(F)F)=C1 UZZYXZWSOWQPIS-UHFFFAOYSA-N 0.000 description 1
- MXYATHGRPJZBNA-UHFFFAOYSA-N 4-epi-isopimaric acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)CC1=CC2 MXYATHGRPJZBNA-UHFFFAOYSA-N 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 102100039992 Gliomedin Human genes 0.000 description 1
- 101000886916 Homo sapiens Gliomedin Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 240000007049 Juglans regia Species 0.000 description 1
- 235000009496 Juglans regia Nutrition 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- GSDSWSVVBLHKDQ-JTQLQIEISA-N Levofloxacin Chemical compound C([C@@H](N1C2=C(C(C(C(O)=O)=C1)=O)C=C1F)C)OC2=C1N1CCN(C)CC1 GSDSWSVVBLHKDQ-JTQLQIEISA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- KGMSWPSAVZAMKR-UHFFFAOYSA-N Me ester-3, 22-Dihydroxy-29-hopanoic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(=C(C)C)C=C1CC2 KGMSWPSAVZAMKR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- QMOWYWSHERGNQQ-UHFFFAOYSA-N N=C=O.CCCCCCCCCC Chemical compound N=C=O.CCCCCCCCCC QMOWYWSHERGNQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- KGMSWPSAVZAMKR-ONCXSQPRSA-N Neoabietic acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CCC(=C(C)C)C=C2CC1 KGMSWPSAVZAMKR-ONCXSQPRSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- IGDGIZKERQBUNG-UHFFFAOYSA-N [Cu].[Ba] Chemical compound [Cu].[Ba] IGDGIZKERQBUNG-UHFFFAOYSA-N 0.000 description 1
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 description 1
- WBWJXRJARNTNBL-UHFFFAOYSA-N [Fe].[Cr].[Co] Chemical compound [Fe].[Cr].[Co] WBWJXRJARNTNBL-UHFFFAOYSA-N 0.000 description 1
- URQWOSCGQKPJCM-UHFFFAOYSA-N [Mn].[Fe].[Ni] Chemical compound [Mn].[Fe].[Ni] URQWOSCGQKPJCM-UHFFFAOYSA-N 0.000 description 1
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 238000010560 atom transfer radical polymerization reaction Methods 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000004067 bulking agent Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- VPKDCDLSJZCGKE-UHFFFAOYSA-N carbodiimide group Chemical group N=C=N VPKDCDLSJZCGKE-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- UTICYDQJEHVLJZ-UHFFFAOYSA-N copper manganese nickel Chemical compound [Mn].[Ni].[Cu] UTICYDQJEHVLJZ-UHFFFAOYSA-N 0.000 description 1
- GBAOZECSOKXKEL-UHFFFAOYSA-N copper yttrium Chemical compound [Cu].[Y] GBAOZECSOKXKEL-UHFFFAOYSA-N 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- UBCNJHBDCUBIPB-UHFFFAOYSA-N diethyl 2,5-dibromohexanedioate Chemical compound CCOC(=O)C(Br)CCC(Br)C(=O)OCC UBCNJHBDCUBIPB-UHFFFAOYSA-N 0.000 description 1
- 229940008099 dimethicone Drugs 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910021474 group 7 element Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229960003376 levofloxacin Drugs 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000013008 moisture curing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- KUJRRRAEVBRSIW-UHFFFAOYSA-N niobium(5+) pentanitrate Chemical compound [Nb+5].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O KUJRRRAEVBRSIW-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012763 reinforcing filler Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229920006298 saran Polymers 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000932 sedative agent Substances 0.000 description 1
- 230000001624 sedative effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- SUBJHSREKVAVAR-UHFFFAOYSA-N sodium;methanol;methanolate Chemical compound [Na+].OC.[O-]C SUBJHSREKVAVAR-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000004334 sorbic acid Substances 0.000 description 1
- 229940075582 sorbic acid Drugs 0.000 description 1
- 235000010199 sorbic acid Nutrition 0.000 description 1
- 235000012424 soybean oil Nutrition 0.000 description 1
- 239000003549 soybean oil Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 235000020234 walnut Nutrition 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
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- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
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Description
本發明係關於一種放熱構造體,其係將熱傳導性硬化性樹脂組合物填充至電子機器、精密機器等所使用之基板上之電磁波屏蔽盒內並使其硬化。
先前,為防止來自外部之電磁波作為雜訊重疊於在電子零件(電子機器驅動時發熱之構件)中輸入輸出之信號,或電子零件本身產生之電磁波作為雜訊重疊於其他信號,而考慮將於該電子零件中輸入輸出之電磁波屏蔽。作為此種電磁波屏蔽盒構造,已知有將搭載於印刷基板上之單一或複數個電子零件自上方以金屬盒體覆蓋者。
然而,在上述構成之情形時,電子零件成為密閉狀態,雖對電磁波屏蔽特性無阻礙,但存在電子零件由於被熱之不良導體即空氣覆蓋,故與其他零件相比溫度更容易上升而劣化較快,或難以發揮特性等問題。尤其,因近年來電子零件之發熱密度變大,故熱對策成為不可或缺之要素。
作為此種系列之熱對策之方法,專利文獻1、2中揭示有一種技術,其係以樹脂填充藉由用以屏蔽電磁波之鋼板製盒體而形成之密閉空間,並將安裝於盒體內部之電子零件之發熱釋放至盒體外表面。然而,由於所揭示之熱傳導性樹脂係矽系樹脂,故擔憂由低分子矽氧烷成分或環狀矽氧烷成分之揮發而引起電子零件之接點障礙。
另一方面,作為一般之熱對策材料,雖存在專利文獻3之熱傳導
性滑脂或專利文獻4之熱傳導性薄膜,但前者之情形時,由於係不會硬化之性狀,故有向系統外流出之危險,後者之情形時,由於無法對應電子零件之細微之凹凸之問題點,故不適應於如上述之電磁波屏蔽盒內之電子零件之熱對策。
又,近年來,於正在全世界普及之智慧型電話、平板等之便攜式資訊終端中,電子零件之運算速度急速高速化,隨之,每單位時間之發熱量亦成為非常大者。另一方面,於智慧型電話、平板等之便攜式資訊終端中,存在若無法設置充足之空間用以放熱,而無法有效地放熱,則電子零件之溫度容易上升而劣化較快等問題。因此,現狀係追求與先前相比放熱效率格外良好之電磁波屏蔽盒。
於專利文獻5中揭示有一種熱傳導性材料,其包含具有交聯性官能基之硬化性丙烯酸系樹脂與熱傳導性填充材。由於該熱傳導性材料不僅具有較高之熱傳導係數,且硬化前具有流動性,故與薄膜狀或凝膠狀之熱傳導性材料不同,可對凹凸形狀之物體具有良好之密著性,從而可抑制由使用時之剝落或空隙等所引起之接觸熱阻之上升。又,因於室溫下硬化,故不會發生滑脂狀熱傳導性材料之問題即隨時間經過向系統外流出,或不存在矽系熱傳導性材料之問題即由低分子矽氧烷成分或環狀矽氧烷成分揮發而引起發熱體電子零件之接點障礙之可能性,係長期穩定性優異之材料。
然而,對熱傳導性材料,追求在作業現場或保養現場之處理或作業性,尤其,在修理或檢查、更換零件時卸除所施工之熱傳導性材料層之作業(修復過程)中,可容易地自發熱體或放熱體剝離,即使熱傳導性材料層部分殘存,仍可藉由拼接而性能無劣化地進行利用。
關於此種熱傳導性材料層之剝離性,例如專利文獻6中,就已改善剝離性之硬化性矽系樹脂進行揭示。然而,因係矽組合物,故存在上述之低分子矽氧烷成分揮發之問題點。又,於專利文獻7中揭示有
關於主鏈骨架為聚異丁烯之硬化性聚異丁烯系樹脂之技術。
專利文獻1:日本專利特開平05-067893號公報
專利文獻2:日本專利特開2001-251088號公報
專利文獻3:日本專利特開2003-15839號公報
專利文獻4:日本專利特開2011-236365號公報
專利文獻5:日本專利特開2010-53331號公報
專利文獻6:日本專利特開2006-96986號公報
專利文獻7:日本專利特開2003-27025號公報
本發明之目的在於提供一種放熱構造體,其係作為設置於基板上之電磁波屏蔽盒內之電子零件之熱對策,填充有無因低分子矽氧烷成分等引起之電子零件之接點障礙、或長期使用時向系統外流出之擔憂之熱傳導性硬化性樹脂組合物並使其硬化。又,目的在於提供一種亦可應用於發熱密度較大之電子零件之放熱構造體。再者,目的在於提供一種電子機器之簡便修理方法。
本發明係關於一種放熱構造體,其特徵在於其係使含有硬化性液狀樹脂(I)與熱傳導性填充材(II)、在23℃下之黏度為30Pa.s~3000Pa.s、且可藉由濕氣或加熱而硬化之熱傳導係數為0.5W/(m.K)以上之熱傳導性硬化性樹脂組合物,於填充至安裝有發熱密度為0.2W/cm2~500W/cm2之電子零件之基板上之電磁波屏蔽盒內之狀態下硬化而獲得。
硬化性液狀樹脂(I)較好為硬化性丙烯酸系樹脂及/或硬化性聚環
氧丙烷系樹脂。
熱傳導性硬化性樹脂組合物之硬化物較好係接觸於電磁波屏蔽盒與電子零件兩者。
熱傳導性硬化性樹脂組合物硬化後之熱傳導係數較好為0.5W/(m.K)以上。
又,本發明係關於具備本發明之放熱構造體之便攜式資訊終端。
又,本發明係關於具備本發明之放熱構造體之電子機器。
又,本發明係關於一種電子機器之修理方法,其特徵在於包含如下步驟:自發熱體及/或放熱體與熱傳導性硬化性樹脂組合物之硬化物之接合體中除去該硬化物;該熱傳導性硬化性樹脂組合物含有硬化性液狀樹脂(I)與熱傳導性填充材(II),在23℃下之黏度為30Pa.s~3000Pa.s,且可藉由濕氣或加熱而硬化之熱傳導係數為0.5W/(m.K)以上;且
該硬化物之對SUS基板之180度剝離強度為0.05N/25mm~1.00N/25mm。
較好的是包含除去該硬化物後,使該發熱體及/或該放熱體、及與該硬化物相同或不同之熱傳導性樹脂組合物之硬化物接合之步驟。
因本發明之熱傳導性硬化性樹脂組合物係液狀樹脂,故不僅可無縫隙地填充電磁波屏蔽盒內,且藉由硬化而無需擔憂樹脂組合物繼時性地向系統外流出。使用該熱傳導性硬化性樹脂組合物之本發明之放熱構造體,由於可將電磁波屏蔽盒內之電子零件之發熱傳遞至電磁波屏蔽盒或基板,故可抑制電子零件之發熱,從而可大大有助於抑制電子零件之性能劣化。
11‧‧‧電磁波屏蔽盒
12‧‧‧基板
13‧‧‧電子零件
13a‧‧‧電子零件a
13b‧‧‧電子零件b
14‧‧‧熱傳導性硬化性樹脂組合物(或硬化物)
圖1係顯示本發明之放熱構造體之一例之概略圖。
圖2係本發明之實施例之概略剖面圖。
圖3係本發明之實施例之概略上表面圖。
圖4係本發明之實施例之概略剖面圖。
圖5係本發明之實施例之概略剖面圖。
本發明之放熱構造體之特徵在於,其係使含有硬化性液狀樹脂(I)與熱傳導性填充材(II),在23℃下之黏度為30Pa.s~3000Pa.s,且可藉由濕氣或加熱而硬化之熱傳導係數為0.5W/(m.K)以上之熱傳導性硬化性樹脂組合物,於填充至安裝有發熱密度為0.2W/cm2~500W/cm2之電子零件之基板上之電磁波屏蔽盒內之狀態下硬化而獲得。
硬化性液狀樹脂較好為可藉由濕氣或加熱而硬化且於分子內包含反應性基而具有硬化性之液狀樹脂。
作為硬化性液狀樹脂之具體例,可例舉出以硬化性丙烯酸系樹脂或硬化性甲基丙烯酸系樹脂為代表之硬化性乙烯系樹脂、以硬化性聚環氧乙烷系樹脂或硬化性聚環氧丙烷系樹脂為代表之硬化性聚醚系樹脂、及以硬化性聚異丁烯系樹脂為代表之硬化性聚烯烴系樹脂等。
作為反應性基,可使用環氧基、水解性甲矽烷基、乙烯基、丙烯醯基、SiH基、聚氨酯基、碳化二醯亞胺基、及羧酸酐與胺基之組合等各種反應性官能基。
在硬化性液狀樹脂係藉由2種反應性基之組合、或反應性基與硬化催化劑之反應而硬化之情形時,準備2液型組合物後,於向基板或發熱體塗佈時混合2種液體,而可獲得硬化性。在具有水解性甲矽烷基之硬化性液狀樹脂之情形時,因可與空氣中之濕氣反應而硬化,故亦可選用1液型室溫硬化性組合物。在乙烯基與SiH基及Pt催化劑之組
合之情形,或自由基引發劑與丙烯醯基之組合等之情形時,在選用1液型硬化性組合物或2液型硬化性組合物後,加熱直至交聯溫度,而亦可使其硬化。一般而言,在容易以某種程度加熱放熱構造體整體之情形時,較好為使用加熱硬化型組合物,在難以加熱放熱構造體之情形時,較好為選用2液型硬化性組合物或選用濕氣硬化型組合物,但並非限定於該等。
在硬化性液狀樹脂中,根據少有由低分子量矽氧烷引起之電子機器內污染之問題,及耐熱性或生產率、作業性優異等,較好為使用硬化性丙烯酸系樹脂或硬化性聚環氧丙烷系樹脂。作為硬化性丙烯酸系樹脂,可使用周知之各種反應性丙烯酸樹脂。在該等中,較好為使用於分子末端具有反應性基之丙烯酸系低聚物。作為該等硬化性丙烯酸系樹脂,可最好使用由活性自由基聚合、尤其係原子轉移自由基聚合所製造之硬化性丙烯酸系樹脂與硬化催化劑之組合。作為該種樹脂之例,眾所周知有(股)KANEKA製KANEKA XMAP。又,作為硬化性聚環氧丙烷系樹脂,可使用周知之各種反應性聚環氧丙烷樹脂,例如可例舉出(股)KANEKA製KANEKA MS聚合物。該等硬化性液狀樹脂可單獨使用,亦可併用2種以上進行使用。
作為熱傳導性硬化性樹脂組合物所使用之熱傳導性填充材,可使用市場出售之一般之良好熱傳導性填充材。其中,根據熱傳導係數、可用性、可賦與絕緣性等之電氣特性、填充性、毒性等各種觀點,可適當例舉出:石墨、金剛石等之碳化合物;氧化鋁、氧化鎂、氧化鈹、氧化鈦、氧化鋯、氧化鋅等金屬氧化物;氮化硼、氮化鋁、氮化矽等金屬氮化物;碳化硼、碳化鋁、碳化矽等金屬碳化物;氫氧化鋁、氫氧化鎂等金屬氫氧化物;碳酸鎂、碳酸鈣等金屬碳酸鹽;結晶二氧化矽:丙烯腈系聚合物燒結物、呋喃樹脂燒結物、甲酚樹脂燒
結物、聚氯乙烯燒結物、砂糖之燒結物、木炭之燒結物等有機性聚合物燒結物;與Zn鐵氧體之複合鐵氧體;Fe-Al-Si系三元合金;羰基鐵粉;鐵鎳合金;金屬粉末等。
進而,根據可取得性或熱傳導性之觀點,較好為石墨、氧化鋁、氧化鎂、氧化鈦、氧化鋅、氮化硼、氮化鋁、碳化矽、氫氧化鋁、碳酸鎂、結晶二氧化矽、Mn-Zn系軟性鐵氧體、Ni-Zn系軟性鐵氧體、Fe-Al-Si系三元合金(鋁矽鐵粉)、羰基鐵粉、及鐵鎳合金(鎳鐵合金);進而較好為石墨、α-氧化鋁、六方氮化硼、氮化鋁、氫氧化鋁、Mn-Zn系軟性鐵氧體、Ni-Zn系軟性鐵氧體、Fe-Al-Si系三元合金(鋁矽鐵粉)、羰基鐵粉、及鐵鎳合金(鎳鐵合金);尤其較好為球狀化石墨、圓形狀或球狀之α-氧化鋁、球狀化六方氮化硼、氮化鋁、氫氧化鋁、Mn-Zn系軟性鐵氧體、Ni-Zn系軟性鐵氧體、球狀Fe-Al-Si系三元合金(鋁矽鐵粉)、及羰基鐵粉。另,在本發明中使用羰基鐵粉之情形時,期望為還原羰基鐵粉。所謂還原羰基鐵粉,並非以標準等級而是以還原等級分類之羰基鐵粉,其特徵係與標準等級相比碳與氮之含有量較低。
又,該等熱傳導性填充材,根據提高對樹脂之分散性之點而言,較好係藉由矽烷偶合劑(乙烯基矽烷、環氧矽烷、(甲基)丙烯酸矽烷、異氰酸酯矽烷、氯矽烷、胺基矽烷等)或鈦酸酯偶合劑(烷氧基鈦酸、胺基鈦酸等)、或脂肪酸(己酸、辛酸、癸酸、月桂酸、肉豆蔻酸、棕櫚酸、硬脂酸、豆油酸等飽和脂肪酸、及山梨酸、反油酸、油酸、亞油酸、亞麻酸、芥酸等不飽和脂肪酸等)或樹脂酸(松香酸、海松酸、左旋海松酸、新松香酸、巴拉西苷酸、脫氫樅酸、異海松酸、山達海松酸、COLM酸、開環脫氫樅酸、二氫松脂酸等)處理表面者。
作為該種熱傳導性填充材之使用量,根據可提高自熱傳導性硬
化性樹脂組合物所獲得之硬化物之熱傳導係數之點,熱傳導性填充材之容積率(%)較好為全部組合物中之25容量%以上。在少於25容量%之情形時,存在熱傳導性不充分之傾向。期望更高之熱傳導係數之情形時,較好為將熱傳導性填充材之使用量設定成全部組合物中之30容量%以上,更好為設定成35容量%以上,尤其更好為設定成40容量%以上。又,熱傳導性填充材之容積率(%)較好為全部組合物中之90容量%以下。在多於90容量%之情形時,存在硬化前之熱傳導性硬化性樹脂組合物之黏度過高之情況。
此處,所謂熱傳導性填充材之容積率(%),係根據樹脂部分及熱傳導性填充材各自之重量分數與比重算出者,並藉由下式求得。另,在下式中,將熱傳導性填充材簡單記述為「填充材」。填充材容積率(容量%)=(填充材重量比率/填充材比重)÷[(樹脂分重量比率/樹脂分比重)+(填充材重量比率/填充材比重)]×100,此處,所謂樹脂分係指除了熱傳導性填充材之全部成分。
又,作為提高熱傳導性填充材對樹脂之填充率之方法,適合併用2種以上之粒子徑不同之熱傳導性填充材。該情形時,較好為使粒子徑較大之熱傳導性填充材與粒子徑較小之熱傳導性填充材之粒徑比為100/5~100/20左右。
熱傳導性填充材不僅係單一之熱傳導性填充材,亦可併用種類不同之2種以上熱傳導性填充材。
熱傳導性硬化性樹脂組合物含有硬化性液狀樹脂(I)與熱傳導性填充材(II),且可藉由濕氣或加熱而硬化。亦可根據需要,於上述2個成分以外添加用以使硬化性液狀樹脂硬化之硬化催化劑、防熱老化劑、塑化劑、增量劑、觸變性賦與劑、貯藏穩定劑、脫水劑、偶合劑、紫外綫吸收劑、阻燃劑、電磁波吸收劑、填充劑、溶劑等。
熱傳導性硬化性樹脂組合物亦可以不妨礙本發明之效果之程度,根據需要使用熱傳導性填充材以外之各種填充材。作為熱傳導性填充材以外之各種填充材,並未特別限定,可例舉出:木粉、紙漿、棉紗晶片、石棉、玻璃纖維、碳纖維、雲母、胡桃殼粉末、稻殼粉末、矽藻土、白土、二氧化矽(燻製二氧化矽、沈澱二氧化矽、熔融二氧化矽、白雲石、矽酸酐、含水矽酸、非晶質球形二氧化矽等)、如碳黑之增強性填充材;矽藻土、煅燒黏土、粘土、滑石、氧化鈦、膨潤土、有機膨潤土、三氧化二鐵、鋁細粉、燧石粉末、活性氧化鋅、鋅粉、碳酸鋅及乳球、玻璃微球、酚醛樹脂或偏二氯乙烯樹脂之有機微球、PVC粉末、PMMA粉末等樹脂粉末等之填充材;石棉、玻璃纖維及玻璃絲、碳纖維、芳綸纖維、聚乙烯纖維等之纖維狀填充材等。該等填充材中,較好為沈澱二氧化矽、燻製二氧化矽、熔融二氧化矽、白雲石、碳黑、氧化鈦、滑石等。另,於該等填充材中亦包含略微具備作為熱傳導性填充材之功能者,且包含如碳纖维、各種金屬粉、各種金屬氧化物、各種有機纖維般,可根據組合、合成方法、結晶度、結晶結構而作為優異之熱傳導性填充材使用者。
熱傳導性硬化性樹脂組合物於23℃下硬化前之黏度為30Pa.s以上,雖具有流動性但為比較高黏度。若硬化前之黏度不足30Pa.s,則因由於黏度較低致使硬化物自塗佈部位流失等理由,使塗佈時之作業性降低。硬化前之黏度較好為40Pa.s以上,更好為50Pa.s以上。硬化前之黏度之上限值為3000Pa.s以下,較好為2000Pa.s以下。若超過3000Pa.s,則存在難以塗佈或注入,或塗佈時混入空氣而成為使熱傳導性降低的原因之一之情形。硬化前之黏度係利用在23℃之環境下使用BH型黏度計於2rpm之條件下測定之值。
熱傳導性硬化性樹脂組合物係熱傳導係數為0.5W/(m.K)以上。熱傳導性硬化性樹脂組合物因必須將熱有效地傳遞至外部,故追求較高之熱傳導係數。熱傳導係數較好為0.7W/(m.K)以上,更好為0.8W/(m.K)以上,進而更好為0.9W/(m.K)以上。藉由使用此種高熱傳導性樹脂,相較於電子零件與空氣接觸之情形,可使電子零件之熱更有效地釋放至電磁波屏蔽盒或基板。
熱傳導性硬化性樹脂組合物硬化後之熱傳導係數較好為0.5W/(m.K)以上。因必須將熱有效地傳遞至外部,故硬化物之熱傳導係數更好為0.7W/(m.K)以上,進而更好為0.8W/(m.K)以上,尤其更好為0.9W/(m.K)以上。藉由使用此種高熱傳導性樹脂,相較於電子零件與空氣接觸之情形,可使電子零件之熱更有效地釋放至電磁波屏蔽盒或基板。
另,使熱傳導性硬化性樹脂組合物硬化而獲得之硬化物之熱傳導係數,較好係在熱傳導性硬化性樹脂組合物之熱傳導係數之加減20%之範圍內。
熱傳導性樹脂組合物之硬化物之硬度較好為較低,以使可吸收高溫時之熱膨脹或變形。為防止由材料間之線性膨脹係數差引起之剝離或裂紋,硬度較好係以ASKER C型硬度計測定為10以上99以下,更好為10以上95以下,進而更好為20以上90以下。
在本發明中,熱傳導性樹脂組合物之硬化物對SUS304板之180度剝離強度(剝離速度300mm/min)較好為0.05N/25mm以上,更好為0.075N/25mm以上,尤其更好為0.10N/25mm以上。又,較好為1.00N/25mm以下,更好為0.75N/25mm以下,尤其更好為0.50N/25mm
以下。在硬化物之剝離強度不足0.05N/25mm之情形時,存在與電子零件或電磁波屏蔽盒之密著力較差,有接觸熱阻升高而放熱性下降之虞。又,若剝離強度超過1.00N/25mm,則尤其無法容易地自凹凸狀之電子零件或電磁波屏蔽盒剝離,從而存在作業性降低之傾向。
另,對SUS基板之180度剝離強度係採用例如以下之方式測定。
1.於長度150mm、寬度20mm、厚度25μm之PET薄膜上,塗佈200μm之熱傳導性硬化性樹脂組合物,並以2kg之滾筒藉由1往復而貼合於SUS304板。
2.於23℃、50%RH條件下熟化1日。
3.使用萬能拉伸試驗機,以剝離角度180度、拉伸速度300mm/min進行剝離試驗。
另,在180度剝離試驗中,硬化物較好為進行界面剝離而非集中剝離。在集中剝離之情形時,存在進行剝離時硬化物殘留於兩面,而使作業效率降低之虞。
硬化物進行界面剝離之可行性,可藉由剝離性試驗予以判斷。更具體而言,例如於記憶基板(MV-DN333-A512M、BUFFALO公司製造)上,塗佈5g之熱傳導性硬化性樹脂組合物,並於23℃、50%RH條件下熟化1日後,在已進行5分鐘之剝離作業時之硬化物之殘留狀況為○(硬化物無殘留)之情形或為△(硬化物有部分殘留)之情形時,判斷硬化物是否可進行界面剝離。
於圖1中顯示本發明之放熱構造體之一形態。電子零件13a及電子零件13b固定於基板12上,覆蓋電子零件13a、13b之電磁波屏蔽盒11設置於基板12上,電磁波屏蔽盒11內之硬化物14係填充熱傳導性硬化性組合物後使其硬化者。
本發明中所使用之電子零件之發熱密度為0.2W/cm2~500W/cm2。發熱密度為0.2W/cm2以上之電子零件在驅動時會發熱至高溫,而具有容易發生零件之性能下降之傾向。電子零件若係電子機器、精密機器驅動時發熱之構件則並非特別限定。電子零件之發熱密度較好為0.3W/cm2以上,更好為0.5W/cm2以上。又,較好為300W/cm2以下,更好為100W/cm2以下。另,所謂發熱密度,意指單位時間內自單位面積放出之熱能。
作為此種電子零件,可例舉出CPU、GPU等之微處理器、DSP(數位信號處理器)、功率放大器、RF收發器IC、放大用IC、信號處理用IC、LNA、天線裝置、過濾裝置、液晶裝置、通信用各種晶片、無線LAN、Bluetooth(藍牙)(註冊商標)、記憶裝置、電源管理、振動馬達、照度、加速度、地磁、壓力等之各種感測器裝置、陀螺儀、各種處理器、LED等之各種模組、積體電路、電晶體、二極體、電阻器、電容器、感應器等。
電子零件可於基板上存在一個,亦可於基板上安裝有複數個。又,關於電磁波屏蔽盒內之電子零件,同樣可於基板上存在一個,亦可於基板上安裝有複數個。在將複數個電子零件安裝於基板上之情形時,電子零件距基板之高度無須一致。藉由在配置未硬化之熱傳導性硬化性樹脂組合物後使其硬化,電子零件之高度不一致之情形時亦可密著,從而將自電子零件產生之熱有效地傳遞至電磁波屏蔽盒或基板。
電子零件之溫度,根據採用其耐熱溫度以下之觀點,較好為130℃以下,更好為120℃以下,進而更好為111℃以下。若超過130℃,則存在形成電子零件之半導體元件等之動作變遲鈍或發生故障之情形。另,根據電子機器,亦存在將電子零件之耐熱溫度限制於120℃以下之情形。又,較好為使用耐熱溫度在電子零件之溫度以上
之熱傳導性硬化性樹脂組合物之硬化物。電子零件之溫度較好為0℃以上。
電磁波屏蔽盒之材料若係藉由將電磁波反射、傳導、或吸收而發揮電磁波屏蔽性能之材料,則並非特別限定。例如,可使用金屬材料或塑料材料、各種磁性材料、碳材料等。其中,根據電磁波屏蔽性能(導電性、磁導率較高)、材料強度、加工性、價格之觀點,可適當地使用金屬材料。
作為金屬材料,較好為僅包含金屬元素之金屬材料。具體而言,作為由金屬元素單體構成之金屬材料,例如可例舉出:鋰、鈉、鉀、銣、銫等之周期表1族元素;鎂、鈣、鍶、鋇等之周期表2族元素;鈧、釔、鑭系元素(鑭、鈰等)、錒系元素(錒等)等之周期表第3族元素;鈦、鋯、鉿等之周期表第4族元素;釩、鈮、鉭等之周期表第5族元素;鉻、鉬、鎢等之周期表第6族元素;錳、鍀、錸等之周期表第7族元素;鐵、釕、鋨等之周期表第8族元素;鈷、銠、銥等之周期表第9族元素;鎳、鈀、鉑等之周期表第10族元素;銅、銀、金等之周期表第11族元素;鋅、鎘、汞等之周期表第12族元素;鋁、鎵、銦、鉈等之周期表第13族元素;錫、鉛等之周期表第14族元素;銻、鉍等之周期表第15族元素等。另一方面。作為合金,例如可例舉出:不鏽鋼、銅-鎳合金、黃銅、鎳-鉻合金、鐵-鎳合金、鋅-鎳合金、金-銅合金、錫-鉛合金、銀-錫-鉛合金、鎳-鉻-鐵合金、銅-錳-鎳合金、鎳-錳-鐵合金等。
又,作為包含金屬元素及非金屬元素之各種金屬系化合物,只要為包含上述例示之金屬元素或合金之可發揮電磁波屏蔽性能之金屬系化合物即可,無特別限制。例如可例舉出:硫化銅等金屬硫化物;氧化鐵、氧化鈦、氧化錫、氧化銦、氧化鎘錫等金屬氧化物或金屬複
合氧化物等。
上述金屬材料中,較好為金、銀、鋁、鐵、銅、鎳、不鏽鋼、銅-鈹合金(鈹銅)、鎂合金、鐵鎳合金、鎳鐵合金、及銅-鎳合金,尤其更好為鋁、鐵、銅、不鏽鋼、銅-鈹合金(鈹銅)、鎂合金、及鐵鎳合金。
作為塑料材料,可例舉出例如聚乙炔、聚吡咯、聚並苯、聚亞苯基、聚苯胺、聚噻吩等導電性塑料。
作為磁性材料,可例舉出例如軟磁性粉末、各種鐵氧體、氧化鋅鬚晶等。作為磁性材料,較好為顯示鐵磁性或亞鐵磁性之鐵磁體。具體而言,可例舉出例如高磁導率鐵氧體、純鐵、含矽之鐵、鎳-鐵系合金、鐵-鈷系合金、非晶形金屬高磁導率材料、鐵-鋁-矽合金、鐵-鋁-矽-鎳合金、鐵-鉻-鈷合金等。
進而,可例舉出石墨等碳材料。
電磁波屏蔽盒係目的在於防止自基板上之電子零件產生之電磁波流出至外部。電磁波屏蔽盒之構造若係可發揮電磁波屏蔽性能之構造,則並非特別限定。
一般而言,電磁波屏蔽盒係如圖1般設置於基板上之接地層,並包圍作為電磁波產生源之電阻零件。一般而言,電磁波屏蔽盒與基板上之接地層係以焊錫或導電性材料等予以接合。
電磁波屏蔽盒在不損害自低頻至高頻之電磁波屏蔽性能之範圍內,可留有孔或空隙。電磁波屏蔽盒可為一體物,亦可為例如抍形狀之屏蔽盒與蓋狀之屏蔽罩般可分離成2個以上之類型。在前者之情形時,自電磁波屏蔽盒之孔注入熱傳導性硬化性樹脂組合物即可,在後者之情形時,於基板上設置有抍形狀之屏蔽盒之狀態下,塗佈熱傳導性硬化性樹脂組合物,並在充分覆蓋電子零件後設置蓋狀之屏蔽罩即可。又,在修復工序中,將電磁波屏蔽盒自基板卸除後,除去電磁波
屏蔽盒內之熱傳導性樹脂,或保持設置電磁波屏蔽盒而卸除蓋狀之屏蔽罩,而除去熱傳導性樹脂,從而可進行電子機器之修復作業。
電磁波屏蔽盒由於越具有高熱傳導性越使溫度分佈均一,且可將電磁波屏蔽盒內之電子零件之發熱有效地傳遞至外部,故較優異。自提高放熱性之觀點而言,電磁波屏蔽盒之熱傳導係數較好為1W/(m.K)以上,更好為3W/(m.K)以上,進而更好為5W/(m.K)以上,最好為10W/(m.K)以上。電磁波屏蔽盒之熱傳導係數較好為10000W/(m.K)以下。
作為於電磁波屏蔽盒內填充熱傳導性硬化性樹脂組合物之方法,可使用一般之液狀樹脂塗佈、注入方法。例如可例舉出旋塗法、輥塗法、浸塗法、噴霧法等周知之塗佈方法。又,可自填充有熱傳導性硬化性樹脂組合物之盒或管、注射器等容器,使用分配器進行塗佈、注入,從而填充電磁波屏蔽盒內。又,亦可不使用分配器而自盒或管、注射器等容器直接塗佈、注入。
填充時,較好為於基板上設置有電磁波屏蔽盒之至少一部分之狀態。例如,若電磁波屏蔽盒係如蓋子般可於上部分離之類型,則可在取下蓋子之狀態下塗佈、注入熱傳導性硬化性樹脂組合物而覆蓋電子零件後,合上蓋子,若係於電磁波屏蔽盒之一部分中存在孔或空隙之類型,則可通過其孔或空隙注入熱傳導性硬化性樹脂組合物。
填充熱傳導性硬化性樹脂組合物後,常溫放置或進行加熱而使其硬化。填充至電磁波屏蔽盒內之熱傳導性硬化性樹脂組合物,較好為硬化後與電磁波屏蔽盒及電子零件兩者接觸,進而較好為亦與基板接觸。藉由使硬化物與電磁波屏蔽盒或基板接觸,而可將電子零件之熱量有效地傳遞至電磁波屏蔽盒或基板。
硬化物之形狀並未特別限定,可例示片狀、帶狀、條狀、圓盤
狀、圓環狀、方塊狀、及不定形。
本發明之便攜式資訊終端及電子機器具備本發明之放熱構造體。
作為便攜式資訊終端、電子機器,若係被電磁波屏蔽盒覆蓋,且於內部具備安裝於基板上之電子零件之機器,則並未特別限定。作為便攜式資訊終端(Personal Digital Assistant:PDA:個人數位助理),例如可例舉出電子手冊、PHS、行動電話、智慧型電話、智慧本、平板終端、數位媒體播放器、數位音頻播放器等。作為電子機器,例如可例舉出:超級電腦、主機架、伺服器、迷你電腦、工作站、個人電腦、便攜式插頭、遊戲機、智慧型電視、膝上型電腦、筆記型電腦(CULV、平板PC、上網本、Ultra-Mobile PC(超便攜PC)、智慧本、Ultrabook(超級本))、便攜式電腦、便攜式遊戲機、電子辭典、電子書閱讀器、便攜式資料終端、頭盔顯示器等機器,液晶顯示器、電漿顯示器、表面傳導型電子釋放元件顯示器(SED)、LED、有機EL、無機EL、液晶投影儀、時鐘等顯示機器,噴墨印表機(噴墨頭)、電子照片裝置(顯影裝置、定著裝置、加熱滾輪、加熱帶)等之圖像形成裝置,半導體元件、半導體封裝、半導體密封殼、半導體晶粒黏合、CPU、記憶體、功率電晶體、功率電晶體殼等之半導體相關零件,剛性佈線板、可撓性佈線板、陶瓷佈線板、增層佈線板、多層基板等之佈線基板(以上所述之佈線板亦包含印刷佈線板等),真空處理裝置、半導體製造裝置、顯示機器製造裝置等之製造裝置,絕熱材、真空絕熱材、輻射絕熱材等之絕熱裝置,DVD(光學讀寫頭、雷射產生裝置、雷射受光裝置)、硬碟驅動器等之資料記錄機器,相機、攝像機、數位相機、數位攝像機、顯微鏡、CCD等之圖像記錄裝置,充電裝置、鋰離子電池、燃料電池、太陽能電池等之電池機器等。
本發明之電子機器之修理方法,其特徵在於包含如下步驟:自發熱體及/或放熱體、與含有硬化性液狀樹脂(I)及熱傳導性填充材(II),在23℃下之黏度為30Pa.s~3000Pa.s,且可藉由濕氣或加熱而硬化之熱傳導係數為0.5W/(m.K)以上之熱傳導性硬化性樹脂組合物之硬化物之接合體,除去該硬化物;且該硬化物對SUS基板之180度剝離強度為0.05N/25mm~1.00N/25mm。
亦可包含除去該硬化物後,使該發熱體及/或該放熱體、及與該硬化物相同或不同之熱傳導性樹脂組合物之硬化物接合之步驟。
本發明之「修理」,廣義上係意指所謂修理之行為。即,亦包含用以檢查、更換零件之行為,或再生產行為。
作為電子機器,若係包含發熱體及/或放熱體與熱傳導性樹脂之接合體者,則並未特別限定,可例舉出上述之便攜式資訊終端及電子機器。
發熱體亦並未特別限定,例如可使用上述之電子零件。發熱體較好為安裝於基板上。
放熱體亦並非特別限定,例如可使用上述之電磁波屏蔽盒。放熱體較好係以包圍發熱體之方式設置於安裝有發熱體之基板上。
放熱體之形狀並未特別限定。在係可分離成如殼體與蓋子般2個以上之形狀之情形時,因可僅卸除蓋子,保持設置有殼體部分而除去熱傳導性樹脂,故較優異。又,放熱體為一體物之情形時,將放熱體自基板卸除後,除去熱傳導性樹脂即可。
作為熱傳導性樹脂之原料即熱傳導性硬化性樹脂組合物,若滿足上述之條件則不特別限定,例如可使用上述熱傳導性硬化性樹脂組合物。
根據本發明,因熱傳導性樹脂對SUS基板之180度剝離強度係存
在於一定之範圍內,故可自接合體容易地剝離,從而可實現電子機器之簡便修理。
以下雖藉由實施例顯示發明之實施態樣、效果,但本發明並非限定於此者。
在氮氣氛下,於250L反應機內加入CuBr(1.09kg)、乙腈(11.4kg)、丙烯酸丁酯(26.0kg)、及2,5-二溴己二酸二乙酯(2.28kg),並於70℃~80℃下攪拌30分鐘左右。於其中加入五甲基二伸乙三胺而開始反應。自反應開始30分鐘後花費2小時連續追加丙烯酸丁酯(104kg)。反應中途適當添加五甲基二伸乙三胺,以使內溫達到70℃~90℃。至此所使用之五甲基二伸乙三胺總量為220g。自反應開始4小時後,於80℃時減壓之條件下,藉由進行加熱攪拌而除去揮發成分。於其中添加乙腈(45.7kg)、1,7-辛二烯(14.0kg)、及五甲基二伸乙三胺(439g)並繼續攪拌8小時。將混合物在80℃時減壓之條件下進行加熱攪拌而除去揮發成分。
於該濃縮物中加入甲苯,並使聚合物溶解後,加入矽藻土作為助濾劑、矽酸鋁作為吸附劑、及鋁碳酸鎂,在氧氮混合氣體氣氛下(氧濃度6%)、於內溫100℃下進行加熱攪拌。以過濾除去混合液中之固成分,並將濾液在內溫100℃時減壓之條件下進行加熱攪拌而除去揮發成分。
進而於該濃縮物中加入矽酸鋁作為吸附劑、鋁碳酸鎂、及抗熱劣化劑,於減壓之條件下進行加熱攪拌(平均溫度約175℃,減壓度10Torr以下)。進而追加矽酸鋁作為吸附劑、及鋁碳酸鎂,並加入抗氧化劑,在氧氮混合氣體氣氛下(氧濃度6%),於內溫150℃下進行加熱攪拌。
於該濃縮物中加入甲苯,並使聚合物溶解後,以過濾除去混合液中之固成分,並在減壓之條件下加熱攪拌濾液而除去揮發成分,從而獲得包含烯基之聚合物。
混合該包含烯基之聚合物、二甲氧基甲基矽烷(相對於烯基為2.0摩爾當量)、原甲酸甲酯(相對於烯基為1.0摩爾當量)、鉑催化劑[雙(1,3-聯乙烯-1,1,3,3-四甲基二矽氧烷)鉑錯合物催化劑之二甲苯溶液:以下稱為鉑催化劑](作為鉑相對於1kg聚合物為10mg),並在氮氣氛下於100℃下進行加熱攪拌。獲得確認烯基消失,濃縮反應混合物而於末端包含二甲氧甲矽烷基之聚合(丙烯酸-n-丁基)樹脂(I-1)。所獲得之樹脂之數平均分子量係約26000,分子量分布為1.3。將以樹脂1分子為單位所導入之平均之甲矽烷基之數量藉由1H NMR分析計算,為約1.8個。
將數平均分子量為約2,000之聚氧丙烯二醇作為引發劑,以六氰基鈷酸鋅甘醇二甲醚錯合物催化劑進行環氧丙烷之聚合,從而獲得數平均分子量25,500(使用TOSOH公司製造之HLC-8120GPC作為液體輸送系統,管柱係使用TOSOH公司製造之TSK-GEL H型號,溶媒係使用THT而測定之聚苯乙烯換算值)之聚環氧丙烷。接著,添加相對於該羥基末端聚環氧丙烷之羥基為1.2倍當量之NaOMe甲醇溶液而餾去甲醇,進而添加氯丙烯而將末端之羥基轉換成烯丙基。藉由減壓脫揮而除去未反應之氯丙烯。對所獲得之未精製之烯丙基末端聚環氧丙烷100重量部,混合攪拌n-己烷300重量部與水300重量部後,藉由離心分離除去水,且於所獲得之己烷溶液中進而混合攪拌水300重量部,並再度藉由離心分離除去水後,藉由減壓脫揮除去己烷。藉由以上步驟,獲得末端為烯丙基之數平均分子量為約25,500之2官能聚環氧丙烷。
對所獲得之烯丙基末端聚環氧丙烷100重量部,添加鉑含量3wt%之鉑乙烯基矽氧烷錯合物異丙醇溶液150ppm作為催化劑,而與三甲氧基矽烷0.95重量部於90℃下反應5小時,從而獲得三甲氧基矽烷基末端聚氧丙烯系聚合物(I-2)。與上述相同,1H-NMR之測定結果,末端之三甲氧基矽烷基係平均每個分子為1.3個。
將合成例1所獲得之樹脂(I-1):90重量部,合成例2所獲得之樹脂(I-2):10重量部,塑化劑(MONOCIZER W-7010(DIC公司製造)):100重量部,抗氧化劑(Irganox1010):1重量部,及表1記述之熱傳導性填充材以手工混合充分攪拌混練後,使用5L蝴蝶攪拌機一方面加熱混練一方面真空吸引脫水。脫水完成後進行冷卻,並與脫水劑(A171):2重量部,硬化催化劑(新癸酸錫、新癸酸):各4重量部混合,從而獲得熱傳導性硬化性樹脂組合物。測定所獲得之熱傳導性硬化性樹脂組合物之黏度與熱傳導係數後,將熱傳導性硬化性樹脂組合物填充至圖2及圖3所示之簡易模型,並評估溫度與有無自電磁波屏蔽盒內流出樹脂。又,測定硬化物之熱傳導係數。於表1中顯示結果。
不使用熱傳導性硬化性樹脂組合物而與實施例1同樣進行評估。於表1中顯示評估結果。
將合成例1所獲得之樹脂(I-1):90重量部,合成例2所獲得之樹脂(I-2):10重量部,塑化劑(MONOCIZER W-7010(DIC公司製造)):100重量部,抗氧化劑(Irganox1010):1重量部,及表2記述之熱傳導性填充材以手工混合充分攪拌混練後,使用5L蝴蝶攪拌機一方面加熱混練一方面真空吸引脫水。脫水完成後進行冷卻,並與脫水劑(A171):2重量部,硬化催化劑(新癸酸錫、新癸酸):各4重量部進行混合,從
而獲得熱傳導性硬化性樹脂組合物。測定所獲得之熱傳導性硬化性樹脂組合物之黏度與熱傳導係數後,將熱傳導性硬化性樹脂組合物以圖4或圖5之方式填充至簡易模型,並評估溫度與有無自電磁波屏蔽盒內流出樹脂。又,測定硬化物之熱傳導係數。於表2中顯示結果。
在23℃、50%RH條件下使用BH型黏度計以2rpm測定熱傳導性硬化性樹脂組合物之黏度。
將熱傳導性硬化性樹脂組合物包於Saran Wrap(註冊商標)內,使用熱板法熱傳導係數測定裝置TPA-501(京都電子工業(股)製),利用以2個試料包夾4 Φ大小之感測器之方法,而測定熱傳導係數。
將熱傳導性硬化性樹脂組合物於23℃、50%RH條件下熟化1日,而獲得2片厚度3mm、直徑20mm之圓盤狀樣品。使用熱板法熱傳導係數測定裝置TPA-501(京都電子工業(股)製),利用以2片試料包夾4 Φ大小之感測器之方法,而測定硬化物之熱傳導係數。
製作圖2及圖3所示之簡易模型,使用Teflon(註冊商標)被覆極細熱電偶雙線TT-D-40-SLE(OMEGA Engineering公司製造)測定電子零件、基板、電磁波屏蔽盒之各模型之溫度。另,溫度係使電子零件模型發熱1小時後之值。
另,圖2~圖5所示之簡易模型之材質與大小全部相同,如以下所示。
11:電磁波屏蔽盒...SUS(0.3mm厚度)製、20mm×20mm×1.40
12:基板...環氧玻璃製、60mm×60mm×0.75mm
13:電子零件...氧化鋁發熱體(發熱量1W、發熱密度1W/cm2)、10mm×10mm×1.05mm
14:熱傳導性硬化性樹脂組合物(或硬化物)
○符號:熱電偶之安裝位置
將熱傳導性硬化性樹脂組合物填充至電磁波屏蔽盒後,以目測評估有無向系統外流出。
如表1所示可知,相對於比較例1,在實施例1~4中,由於係以接觸於電磁波屏蔽盒與基板、電子零件之方式塗佈熱傳導性硬化性樹脂
組合物,故電子零件之溫度大幅下降,且電磁波屏蔽盒與基板之溫度上升。此意指電子零件之發熱傳遞至電磁波屏蔽盒或基板。又,如表2所示可知,於僅塗佈於電子零件之上部,與電磁波屏蔽盒接觸之實施例6中,雖電子零件之溫度大幅下降,熱量未傳遞至基板,但熱量傳遞至電磁波屏蔽盒,而可放熱。另一方面,於不含有熱傳導性填充材之比較例2中,不僅上述效果較小,且由於黏度較低,故確認樹脂向電磁波屏蔽盒外流出。
將合成例1所獲得之樹脂(I-1):100重量部,塑化劑(DIDP(J-PLUS公司製造)):100重量部,抗氧化劑(Irganox1010(BASF JAPAN公司製造)):1重量部,熱傳導性填充材(AS-40(氧化鋁、昭和電工公司製造)/氧化鋅(堺化学工业公司製造)):1070/500重量部以手工混合充分攪拌混練後,使用5L蝴蝶攪拌機一方面加熱混練一方面真空吸引脫水。脫水完成後進行冷卻,並與脫水劑(A171(DOWCORNING公司製造)):4重量部,硬化催化劑(新癸酸錫U-50H(日東化成工業公司製造)):4重量部混合,從而獲得熱傳導性硬化性樹脂組合物。於表3中顯示評估結果。
將合成例1所獲得之樹脂(I-1):100重量部,塑化劑(DIDP):100重量部,抗氧化劑(Irganox1010):1重量部,熱傳導性填充材(BF-083(氫氧化鋁、日本輕金屬公司製造)/氧化鋅:500/450重量部以手工混合充分攪拌混練後,使用5L蝴蝶攪拌機一方面加熱混練一方面真空吸引脫水。脫水完成後進行冷卻,並與脫水劑(A171):4重量部,硬化催化劑(新癸酸錫U-50H):4重量部混合,從而獲得熱傳導性硬化性樹脂組合物。於表3中顯示評估結果。
將合成例1所獲得之樹脂(I-1):90重量部,合成例2所獲得之樹脂(I-2):10重量部,塑化劑(DIDP):95重量部,抗氧化劑(Irganox1010):1重量部,熱傳導性填充材(BF-083(氫氧化鋁、日本輕金屬公司製造)/氧化鋅:440/100重量部以手工混合充分攪拌混練後,使用5L蝴蝶攪拌機一方面加熱混練一方面真空吸引脫水。脫水完成後進行冷卻,並與脫水劑(A171):2重量部,硬化催化劑(新癸酸錫U-50H):4重量部混合,從而獲得熱傳導性硬化性樹脂組合物。於表3中顯示評估結果。
使用熱傳導性硬化性彈性體(KE3467、信越化學工業公司製造),與實施例相同地進行評估。於表3中顯示評估結果。
使用熱傳導性硬化性彈性體(SE4420、DOWCORNING公司製造),與實施例相同地進行評估。於表3中顯示評估結果。
於23℃、50%RH之條件下使用BS型黏度計,以2rpm測定熱傳導性硬化性樹脂組合物之黏度。
將熱傳導性硬化性樹脂組合物於23℃、50%RH條件下熟化1日,而獲得2片厚度3mm、直徑20mm之圓盤狀樣品。使用熱板法熱傳導係數測定裝置TPA-501(京都電子工業(股)製),利用以2片試料包夾4 Φ大小之感測器之方法,而測定硬化物之熱傳導係數。
將熱傳導性硬化性樹脂組合物於23℃、50%RH條件下熟化1日,製作20×20×6mm之硬化物,以ASKER C型硬度計測定硬度。
於長度150mm、寬度20mm、厚度25μm之PET薄膜上,塗佈200μm之熱傳導性硬化性樹脂組合物,並藉由來回滾動一次2Kg之滾筒而貼合於SUS304板。於23℃、50%RH條件下熟化1日後,使用萬能拉伸試驗機以剝離角度180度、拉伸速度300mm/min進行剝離試驗,從而測定剝離強度。
將熱傳導性硬化性樹脂組合物塗佈於記憶體基板(MV-DN333-A512M、BUFFALO公司製造)上5g,並於23℃、50%RH條件下熟化1日後,使用熱衝擊試驗機(ES-56L、日立電器公司製造),使其分別於-40℃與85℃之溫度環境下保持30分鐘,並將該動作循環重複100次,而進行熱衝擊試驗,且以以下標準評估硬化物之密著狀況。
○:未剝離
△:一部分剝離
×:全部剝離
將熱傳導性硬化性樹脂組合物塗佈於記憶體基板(MV-DN333-A512M、BUFFALO公司製造)上5g,並於23℃、50%RH條件下熟化1日後,以以下之標準評估已進行5分鐘剝離作業時之硬化物之殘留狀況。
○:硬化物無殘留
△:有一部分硬化物殘留
×:硬化物無法剝離,大部分殘留
如表3所示,在實施例7~9中,由於180度剝離試驗之剝離強度較小,故可確認可自設想之發熱體(實施例中為記憶體基板)上容易地剝離硬化物。另一方面可知,因比較例3及4係180度剝離強度大於1.00N/25mm,結果使一部分或大部份硬化物殘留於記憶體基板上,故作業性不佳。
11‧‧‧電磁波屏蔽盒
12‧‧‧基板
13a‧‧‧電子零件a
13b‧‧‧電子零件b
14‧‧‧熱傳導性硬化性樹脂組合物(或硬化物)
Claims (8)
- 一種放熱構造體,其特徵在於具備:基板、熱傳導性硬化性樹脂組合物之硬化物、發熱密度為0.2W/cm2~500W/cm2之電子零件及電磁波屏蔽盒,並使熱傳導性硬化性樹脂組合物於填充至安裝有電子零件之基板上之電磁波屏蔽盒內之狀態下硬化而獲得,該硬化物係與電磁波屏蔽盒及電子零件兩者接觸;其中熱傳導性硬化性樹脂組合物係含有硬化性液狀樹脂(I)與熱傳導性填充材(II)、在23℃下之黏度為30Pa.s~3000Pa.s、且可藉由濕氣或加熱而硬化之熱傳導係數為0.5W/(m.K)以上之樹脂組合物,且該硬化物對SUS304板之180度剝離強度為0.05N/25mm~1.00N/25mm。
- 如請求項1之放熱構造體,其中硬化性液狀樹脂(I)為硬化性丙烯酸系樹脂及/或硬化性聚環氧丙烷系樹脂。
- 如請求項1或2之放熱構造體,其中熱傳導性硬化性樹脂組合物硬化後之熱傳導係數為0.5W/(m.K)以上。
- 一種便攜式資訊終端,其具備如請求項1至3中任一項之放熱構造體。
- 一種電子機器,其具備如請求項1至3中任一項之放熱構造體。
- 一種電子機器之修理方法,其特徵在於包含如下步驟:自發熱體及/或放熱體與熱傳導性硬化性樹脂組合物之硬化物之接合體中除去該硬化物;該熱傳導性硬化性樹脂組合物包含硬化性液狀樹脂(I)與熱傳導性填充材(II),在23℃下之黏度為30Pa.s~3000Pa.s,且可藉由濕氣或加熱而硬化之熱傳導係數為0.5 W/(m.K)以上;且該硬化物對SUS基板之180度剝離強度為0.05N/25mm~1N/25mm。
- 如請求項6之電子機器之修理方法,其包含如下步驟:於除去該硬化物後,使該發熱體及/或該放熱體、及與該硬化物相同或不同之熱傳導性樹脂組合物之硬化物接合。
- 如請求項6或7之電子機器之修理方法,其中硬化性液狀樹脂(I)為硬化性丙烯酸系樹脂及/或硬化性聚環氧丙烷系樹脂。
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Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170090532A1 (en) * | 2014-03-14 | 2017-03-30 | Kaneka Corporation | Electronic terminal equipment and method for assembling same |
KR102340828B1 (ko) | 2014-10-23 | 2021-12-17 | 삼성전자주식회사 | 인쇄회로기판 어셈블리 제조 방법 |
US9575523B2 (en) | 2015-01-22 | 2017-02-21 | Microsoft Technology Licensing, Llc | Device sandwich structured composite housing |
US10157855B2 (en) * | 2015-06-03 | 2018-12-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor device including electric and magnetic field shielding |
KR101691797B1 (ko) * | 2015-06-03 | 2017-01-02 | 엘지전자 주식회사 | 이동 단말기 |
WO2017047440A1 (ja) * | 2015-09-18 | 2017-03-23 | 東レ株式会社 | 電子機器筐体 |
WO2017131709A1 (en) * | 2016-01-28 | 2017-08-03 | Hewlett-Packard Development Company, L.P. | Three-dimensional (3d) printing with a detailing agent fluid and a liquid functional material |
CN105744724B (zh) * | 2016-03-17 | 2018-09-21 | 广东小天才科技有限公司 | 电子器件的散热结构、穿戴式电子设备及其散热方法 |
US11244877B2 (en) | 2016-04-04 | 2022-02-08 | Hitachi, Ltd. | Sealing structure and manufacturing method thereof |
CN105811891A (zh) * | 2016-04-20 | 2016-07-27 | 佛山臻智微芯科技有限公司 | 减低移动通信多级功率放大器中带内噪声的结构和方法 |
JP6094714B1 (ja) * | 2016-06-30 | 2017-03-15 | 富士ゼロックス株式会社 | 露光装置 画像形成装置 露光装置の製造方法 |
CN107820359A (zh) * | 2016-09-14 | 2018-03-20 | 深圳市掌网科技股份有限公司 | 一种主pcba板 |
CN106572627A (zh) * | 2016-11-15 | 2017-04-19 | 努比亚技术有限公司 | 一种屏蔽罩及电路板 |
WO2018092529A1 (ja) * | 2016-11-16 | 2018-05-24 | 株式会社村田製作所 | 高周波モジュール |
CN106612610B (zh) * | 2016-12-05 | 2019-05-07 | 上海阿莱德实业股份有限公司 | 一种电路的屏蔽结构 |
DE112017006387B4 (de) * | 2016-12-21 | 2024-07-11 | Mitsubishi Electric Corporation | Halbleitereinheit |
JP6363687B2 (ja) * | 2016-12-26 | 2018-07-25 | デクセリアルズ株式会社 | 半導体装置 |
CN106658948A (zh) * | 2017-01-06 | 2017-05-10 | 安徽鹏展电子科技有限公司 | 一种散热的柔性线路板及其表面涂料 |
JP6662319B2 (ja) * | 2017-02-03 | 2020-03-11 | オムロン株式会社 | 異常検出装置 |
KR20190051205A (ko) * | 2017-11-06 | 2019-05-15 | 주식회사 루멘스 | 엘이디 패키지 |
DE102018102989B4 (de) | 2018-02-09 | 2020-08-13 | Polytec Pt Gmbh | Akkumulator-Anordnung mit einem thermischen Kontakt- und Füllmaterial |
US20190357386A1 (en) * | 2018-05-16 | 2019-11-21 | GM Global Technology Operations LLC | Vascular polymeric assembly |
JP7265321B2 (ja) * | 2018-06-21 | 2023-04-26 | デクセリアルズ株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2020004840A (ja) * | 2018-06-28 | 2020-01-09 | アルパイン株式会社 | 電子ユニットおよびその製造方法 |
US10672703B2 (en) * | 2018-09-26 | 2020-06-02 | Nxp Usa, Inc. | Transistor with shield structure, packaged device, and method of fabrication |
EP3667873B1 (de) * | 2018-12-10 | 2022-03-23 | Wilo Se | Pumpenelektronik |
KR102304963B1 (ko) * | 2019-10-18 | 2021-09-27 | 엔트리움 주식회사 | 반도체 패키지 |
CN113133233A (zh) * | 2020-01-15 | 2021-07-16 | 浙江盘毂动力科技有限公司 | 一种绝缘导热灌封电气元件及其灌封方法 |
CN112497595A (zh) * | 2020-11-12 | 2021-03-16 | 西安紫光国芯半导体有限公司 | 一种柔性散热外壳的制备方法及其应用 |
TWI765791B (zh) * | 2021-07-30 | 2022-05-21 | 華碩電腦股份有限公司 | 印刷電路板與具有該印刷電路板之電子裝置 |
TWI813019B (zh) * | 2021-09-14 | 2023-08-21 | 南亞塑膠工業股份有限公司 | 樹脂材料及金屬基板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0567893A (ja) * | 1991-09-10 | 1993-03-19 | Mitsubishi Electric Corp | 回路基板の局部シールド方法 |
TW201002777A (en) * | 2008-04-21 | 2010-01-16 | Honeywell Int Inc | Thermal interconnect and interface materials, methods of production and uses thereof |
JP2011187899A (ja) * | 2010-03-11 | 2011-09-22 | Kaneka Corp | 放熱構造体 |
WO2011158412A1 (ja) * | 2010-06-15 | 2011-12-22 | パナソニック株式会社 | 実装構造体とその製造方法ならびに実装構造体のリペア方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07249715A (ja) * | 1994-03-14 | 1995-09-26 | Fujitsu Ltd | 半導体装置 |
WO1995027308A1 (en) * | 1994-04-05 | 1995-10-12 | Olin Corporation | Cavity filled metal electronic package |
JP2000332169A (ja) | 1999-05-17 | 2000-11-30 | Toshiba Corp | 発熱体の放熱構造及びこれを有する電子機器 |
JP3524034B2 (ja) | 2000-03-08 | 2004-04-26 | 北川工業株式会社 | 電磁波シールド構造及び電磁波シールド方法 |
JP2003015839A (ja) | 2001-06-29 | 2003-01-17 | Minolta Co Ltd | データ受信装置、印刷システム、データ受信方法及びデータ受信プログラム |
JP2003027025A (ja) | 2001-07-17 | 2003-01-29 | Cemedine Co Ltd | 高密着性易剥離組成物及び易剥離装置 |
JP4146286B2 (ja) * | 2003-05-30 | 2008-09-10 | 株式会社ケーヒン | 電子回路基板の収容ケース |
JP4029822B2 (ja) * | 2003-10-27 | 2008-01-09 | 三菱電機株式会社 | 電子回路装置 |
JP5015436B2 (ja) * | 2004-08-30 | 2012-08-29 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーンエラストマー、熱伝導媒体および熱伝導性シリコーンエラストマー組成物 |
US8421247B2 (en) * | 2008-04-30 | 2013-04-16 | Hitachi Chemical Company, Ltd. | Connecting material having metallic particles of an oxygen state ratio and size and semiconductor device having the connecting material |
JP5607298B2 (ja) * | 2008-07-29 | 2014-10-15 | 株式会社カネカ | 熱伝導材料 |
JP2010171030A (ja) * | 2008-12-22 | 2010-08-05 | Kaneka Corp | 放熱構造体 |
JP5390202B2 (ja) * | 2009-01-21 | 2014-01-15 | 株式会社カネカ | 放熱構造体 |
JP5558182B2 (ja) | 2009-05-27 | 2014-07-23 | 山洋電気株式会社 | 電気装置の放熱構造 |
JP5390296B2 (ja) * | 2009-08-19 | 2014-01-15 | 株式会社カネカ | 放熱構造体 |
JP2011236365A (ja) | 2010-05-12 | 2011-11-24 | Jsr Corp | 熱可塑性エラストマー組成物及び熱伝導性シート |
JP2012102301A (ja) * | 2010-11-13 | 2012-05-31 | Nitto Denko Corp | 気泡含有熱伝導性樹脂組成物層およびその製造方法、それを用いた感圧性接着テープ又はシート |
-
2013
- 2013-06-06 CN CN201380031090.4A patent/CN104350814B/zh active Active
- 2013-06-06 US US14/407,257 patent/US10356946B2/en active Active
- 2013-06-06 EP EP13804707.1A patent/EP2863725B1/en active Active
- 2013-06-06 KR KR20157000677A patent/KR20150023710A/ko not_active Application Discontinuation
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- 2013-06-06 WO PCT/JP2013/065646 patent/WO2013187298A1/ja active Application Filing
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0567893A (ja) * | 1991-09-10 | 1993-03-19 | Mitsubishi Electric Corp | 回路基板の局部シールド方法 |
TW201002777A (en) * | 2008-04-21 | 2010-01-16 | Honeywell Int Inc | Thermal interconnect and interface materials, methods of production and uses thereof |
JP2011187899A (ja) * | 2010-03-11 | 2011-09-22 | Kaneka Corp | 放熱構造体 |
WO2011158412A1 (ja) * | 2010-06-15 | 2011-12-22 | パナソニック株式会社 | 実装構造体とその製造方法ならびに実装構造体のリペア方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2863725B1 (en) | 2021-04-28 |
JP6268086B2 (ja) | 2018-01-24 |
EP2863725A4 (en) | 2016-08-03 |
CN104350814A (zh) | 2015-02-11 |
EP2863725A1 (en) | 2015-04-22 |
CN104350814B (zh) | 2017-10-13 |
TW201410859A (zh) | 2014-03-16 |
KR20150023710A (ko) | 2015-03-05 |
WO2013187298A1 (ja) | 2013-12-19 |
US10356946B2 (en) | 2019-07-16 |
JPWO2013187298A1 (ja) | 2016-02-04 |
US20150163958A1 (en) | 2015-06-11 |
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