TWI606569B - 半導體元件以及半導體封裝 - Google Patents

半導體元件以及半導體封裝 Download PDF

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Publication number
TWI606569B
TWI606569B TW103107328A TW103107328A TWI606569B TW I606569 B TWI606569 B TW I606569B TW 103107328 A TW103107328 A TW 103107328A TW 103107328 A TW103107328 A TW 103107328A TW I606569 B TWI606569 B TW I606569B
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TW
Taiwan
Prior art keywords
memory
soc
system single
output
bump
Prior art date
Application number
TW103107328A
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English (en)
Chinese (zh)
Other versions
TW201436165A (zh
Inventor
金泰善
林慶默
Original Assignee
三星電子股份有限公司
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Publication date
Application filed by 三星電子股份有限公司 filed Critical 三星電子股份有限公司
Publication of TW201436165A publication Critical patent/TW201436165A/zh
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Publication of TWI606569B publication Critical patent/TWI606569B/zh

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Memory System (AREA)
TW103107328A 2013-03-15 2014-03-05 半導體元件以及半導體封裝 TWI606569B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130027658A KR102029682B1 (ko) 2013-03-15 2013-03-15 반도체 장치 및 반도체 패키지

Publications (2)

Publication Number Publication Date
TW201436165A TW201436165A (zh) 2014-09-16
TWI606569B true TWI606569B (zh) 2017-11-21

Family

ID=50792497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107328A TWI606569B (zh) 2013-03-15 2014-03-05 半導體元件以及半導體封裝

Country Status (8)

Country Link
US (1) US9275688B2 (cg-RX-API-DMAC7.html)
JP (1) JP2014182794A (cg-RX-API-DMAC7.html)
KR (1) KR102029682B1 (cg-RX-API-DMAC7.html)
CN (1) CN104051410B (cg-RX-API-DMAC7.html)
DE (1) DE102014103186B4 (cg-RX-API-DMAC7.html)
IN (1) IN2014DE00712A (cg-RX-API-DMAC7.html)
NL (1) NL2012389B1 (cg-RX-API-DMAC7.html)
TW (1) TWI606569B (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324397B1 (en) * 2015-01-16 2016-04-26 Qualcomm Incorporated Common die for supporting different external memory types with minimal packaging complexity
TWI561960B (en) * 2015-11-05 2016-12-11 Sunplus Technology Co Ltd Clock providing system
KR102413441B1 (ko) 2015-11-12 2022-06-28 삼성전자주식회사 반도체 패키지
KR102468698B1 (ko) * 2015-12-23 2022-11-22 에스케이하이닉스 주식회사 메모리 장치
DE102016011750A1 (de) * 2016-09-29 2018-03-29 Ceramtec-Etec Gmbh Datenträger aus Keramik
US11514996B2 (en) * 2017-07-30 2022-11-29 Neuroblade Ltd. Memory-based processors
KR20190087893A (ko) * 2018-01-17 2019-07-25 삼성전자주식회사 클럭을 공유하는 반도체 패키지 및 전자 시스템
KR102836932B1 (ko) * 2018-09-06 2025-07-22 뉴로블레이드, 리미티드. 메모리 기반 프로세서
WO2020240239A1 (en) * 2019-05-31 2020-12-03 Micron Technology, Inc. Memory component for a system-on-chip device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223454A (en) * 1988-01-29 1993-06-29 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
US6809421B1 (en) * 1996-12-02 2004-10-26 Kabushiki Kaisha Toshiba Multichip semiconductor device, chip therefor and method of formation thereof
US6724084B1 (en) * 1999-02-08 2004-04-20 Rohm Co., Ltd. Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device
US7173877B2 (en) * 2004-09-30 2007-02-06 Infineon Technologies Ag Memory system with two clock lines and a memory device
EP1830363A4 (en) * 2004-12-24 2008-10-08 Spansion Llc SYNCHRONIZATION TYPE STORAGE DEVICE AND METHOD OF CONTROLLING THE SAME
JP4910512B2 (ja) * 2006-06-30 2012-04-04 富士通セミコンダクター株式会社 半導体装置および半導体装置の製造方法
US8059443B2 (en) 2007-10-23 2011-11-15 Hewlett-Packard Development Company, L.P. Three-dimensional memory module architectures
US20100140750A1 (en) * 2008-12-10 2010-06-10 Qualcomm Incorporated Parallel Plane Memory and Processor Coupling in a 3-D Micro-Architectural System
US20100174858A1 (en) 2009-01-05 2010-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Extra high bandwidth memory die stack
US8207754B2 (en) 2009-02-24 2012-06-26 Stmicroelectronics International N.V. Architecture for efficient usage of IO
US8174876B2 (en) * 2009-06-19 2012-05-08 Hynix Semiconductor Inc. Fusion memory device embodied with phase change memory devices having different resistance distributions and data processing system using the same
US8227904B2 (en) 2009-06-24 2012-07-24 Intel Corporation Multi-chip package and method of providing die-to-die interconnects in same
US8698321B2 (en) 2009-10-07 2014-04-15 Qualcomm Incorporated Vertically stackable dies having chip identifier structures
US8612809B2 (en) 2009-12-31 2013-12-17 Intel Corporation Systems, methods, and apparatuses for stacked memory
US8796863B2 (en) 2010-02-09 2014-08-05 Samsung Electronics Co., Ltd. Semiconductor memory devices and semiconductor packages
KR20110099384A (ko) * 2010-03-02 2011-09-08 삼성전자주식회사 와이드 입출력 반도체 메모리 장치 및 이를 포함하는 반도체 패키지
US9123552B2 (en) * 2010-03-30 2015-09-01 Micron Technology, Inc. Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same
KR101728067B1 (ko) 2010-09-03 2017-04-18 삼성전자 주식회사 반도체 메모리 장치
KR20120068216A (ko) 2010-12-17 2012-06-27 에스케이하이닉스 주식회사 반도체 집적회로
US8399961B2 (en) * 2010-12-21 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning the efficiency in the transmission of radio-frequency signals using micro-bumps
KR20120079397A (ko) * 2011-01-04 2012-07-12 삼성전자주식회사 적층형 반도체 장치 및 이의 제조 방법
US8564111B2 (en) * 2011-01-27 2013-10-22 Siano Mobile Silicon Ltd. Stacked digital/RF system-on-chip with integral isolation layer
KR20120098096A (ko) 2011-02-28 2012-09-05 에스케이하이닉스 주식회사 반도체 집적회로
JP5286382B2 (ja) * 2011-04-11 2013-09-11 株式会社日立製作所 半導体装置およびその製造方法
CN102891114B (zh) * 2012-10-24 2015-01-28 上海新储集成电路有限公司 一种上下堆叠的片上系统芯片的制作方法

Also Published As

Publication number Publication date
CN104051410B (zh) 2018-05-01
JP2014182794A (ja) 2014-09-29
KR20140112944A (ko) 2014-09-24
KR102029682B1 (ko) 2019-10-08
IN2014DE00712A (cg-RX-API-DMAC7.html) 2015-06-19
TW201436165A (zh) 2014-09-16
US20140268979A1 (en) 2014-09-18
DE102014103186A1 (de) 2014-09-18
NL2012389B1 (en) 2016-07-15
CN104051410A (zh) 2014-09-17
DE102014103186B4 (de) 2021-05-27
US9275688B2 (en) 2016-03-01
NL2012389A (en) 2014-09-16

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