NL2012389B1 - Semiconductor device and semiconductor package. - Google Patents

Semiconductor device and semiconductor package. Download PDF

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Publication number
NL2012389B1
NL2012389B1 NL2012389A NL2012389A NL2012389B1 NL 2012389 B1 NL2012389 B1 NL 2012389B1 NL 2012389 A NL2012389 A NL 2012389A NL 2012389 A NL2012389 A NL 2012389A NL 2012389 B1 NL2012389 B1 NL 2012389B1
Authority
NL
Netherlands
Prior art keywords
chip
memory
soc
wide input
output
Prior art date
Application number
NL2012389A
Other languages
English (en)
Dutch (nl)
Other versions
NL2012389A (en
Inventor
Sun Kim Tae
Mook Lim Kyoung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL2012389A publication Critical patent/NL2012389A/en
Application granted granted Critical
Publication of NL2012389B1 publication Critical patent/NL2012389B1/en

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Memory System (AREA)
NL2012389A 2013-03-15 2014-03-10 Semiconductor device and semiconductor package. NL2012389B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130027658A KR102029682B1 (ko) 2013-03-15 2013-03-15 반도체 장치 및 반도체 패키지
KR20130027658 2013-03-15

Publications (2)

Publication Number Publication Date
NL2012389A NL2012389A (en) 2014-09-16
NL2012389B1 true NL2012389B1 (en) 2016-07-15

Family

ID=50792497

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2012389A NL2012389B1 (en) 2013-03-15 2014-03-10 Semiconductor device and semiconductor package.

Country Status (8)

Country Link
US (1) US9275688B2 (cg-RX-API-DMAC7.html)
JP (1) JP2014182794A (cg-RX-API-DMAC7.html)
KR (1) KR102029682B1 (cg-RX-API-DMAC7.html)
CN (1) CN104051410B (cg-RX-API-DMAC7.html)
DE (1) DE102014103186B4 (cg-RX-API-DMAC7.html)
IN (1) IN2014DE00712A (cg-RX-API-DMAC7.html)
NL (1) NL2012389B1 (cg-RX-API-DMAC7.html)
TW (1) TWI606569B (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324397B1 (en) * 2015-01-16 2016-04-26 Qualcomm Incorporated Common die for supporting different external memory types with minimal packaging complexity
TWI561960B (en) * 2015-11-05 2016-12-11 Sunplus Technology Co Ltd Clock providing system
KR102413441B1 (ko) 2015-11-12 2022-06-28 삼성전자주식회사 반도체 패키지
KR102468698B1 (ko) * 2015-12-23 2022-11-22 에스케이하이닉스 주식회사 메모리 장치
DE102016011750A1 (de) * 2016-09-29 2018-03-29 Ceramtec-Etec Gmbh Datenträger aus Keramik
US11514996B2 (en) * 2017-07-30 2022-11-29 Neuroblade Ltd. Memory-based processors
KR20190087893A (ko) * 2018-01-17 2019-07-25 삼성전자주식회사 클럭을 공유하는 반도체 패키지 및 전자 시스템
KR102836932B1 (ko) * 2018-09-06 2025-07-22 뉴로블레이드, 리미티드. 메모리 기반 프로세서
WO2020240239A1 (en) * 2019-05-31 2020-12-03 Micron Technology, Inc. Memory component for a system-on-chip device

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US7173877B2 (en) * 2004-09-30 2007-02-06 Infineon Technologies Ag Memory system with two clock lines and a memory device
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JP4910512B2 (ja) * 2006-06-30 2012-04-04 富士通セミコンダクター株式会社 半導体装置および半導体装置の製造方法
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Also Published As

Publication number Publication date
CN104051410B (zh) 2018-05-01
JP2014182794A (ja) 2014-09-29
TWI606569B (zh) 2017-11-21
KR20140112944A (ko) 2014-09-24
KR102029682B1 (ko) 2019-10-08
IN2014DE00712A (cg-RX-API-DMAC7.html) 2015-06-19
TW201436165A (zh) 2014-09-16
US20140268979A1 (en) 2014-09-18
DE102014103186A1 (de) 2014-09-18
CN104051410A (zh) 2014-09-17
DE102014103186B4 (de) 2021-05-27
US9275688B2 (en) 2016-03-01
NL2012389A (en) 2014-09-16

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