TWI598968B - Die bonder and bonding methods - Google Patents
Die bonder and bonding methods Download PDFInfo
- Publication number
- TWI598968B TWI598968B TW105135965A TW105135965A TWI598968B TW I598968 B TWI598968 B TW I598968B TW 105135965 A TW105135965 A TW 105135965A TW 105135965 A TW105135965 A TW 105135965A TW I598968 B TWI598968 B TW I598968B
- Authority
- TW
- Taiwan
- Prior art keywords
- die
- waveform
- unit
- bonding
- head
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 52
- 238000004092 self-diagnosis Methods 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 25
- 238000003384 imaging method Methods 0.000 claims description 19
- 241000309551 Arthraxon hispidus Species 0.000 claims description 15
- 238000012423 maintenance Methods 0.000 claims description 15
- 238000005304 joining Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 8
- 230000003111 delayed effect Effects 0.000 claims description 2
- 238000012790 confirmation Methods 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000005856 abnormality Effects 0.000 description 13
- 238000003745 diagnosis Methods 0.000 description 10
- 230000032258 transport Effects 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 230000002238 attenuated effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000002059 diagnostic imaging Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Supply And Installment Of Electrical Components (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016053169A JP6667326B2 (ja) | 2016-03-17 | 2016-03-17 | ダイボンダおよびボンディング方法 |
| JP2016-053169 | 2016-03-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI598968B true TWI598968B (zh) | 2017-09-11 |
| TW201810457A TW201810457A (zh) | 2018-03-16 |
Family
ID=59904684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105135965A TWI598968B (zh) | 2016-03-17 | 2016-11-04 | Die bonder and bonding methods |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6667326B2 (enExample) |
| KR (1) | KR101923274B1 (enExample) |
| CN (1) | CN107204302B (enExample) |
| TW (1) | TWI598968B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7018341B2 (ja) * | 2018-03-26 | 2022-02-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
| US11069555B2 (en) * | 2018-09-03 | 2021-07-20 | Assembleon B.V. | Die attach systems, and methods of attaching a die to a substrate |
| JP7291586B2 (ja) * | 2019-09-19 | 2023-06-15 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
| KR102377826B1 (ko) * | 2020-03-06 | 2022-03-23 | 세메스 주식회사 | 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치 |
| KR102377825B1 (ko) * | 2020-03-06 | 2022-03-23 | 세메스 주식회사 | 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치 |
| KR102654727B1 (ko) * | 2021-07-21 | 2024-04-03 | 세메스 주식회사 | 다이 본딩 방법 및 다이 본딩 장치 |
| WO2024018937A1 (ja) * | 2022-07-21 | 2024-01-25 | ボンドテック株式会社 | 接合方法および接合装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200620494A (en) * | 2004-11-26 | 2006-06-16 | Tsukuba Seiko Ltd | Die bonding device |
| TW200836456A (en) * | 2007-02-23 | 2008-09-01 | Toshiba Kk | Linear actuator and parts holding apparatus/die bonder apparatus utilizing same |
| TW200947572A (en) * | 2008-03-28 | 2009-11-16 | Shibaura Mechatronics Corp | Apparatus and method for mounting electronic component |
| TW201232679A (en) * | 2010-10-29 | 2012-08-01 | Hitachi High Tech Instr Co Ltd | Die bonding device, die bonding method and die bonding quality evaluation equipment |
| TW201304040A (zh) * | 2011-07-12 | 2013-01-16 | 日立先端科技儀器股份有限公司 | 黏晶機及黏晶機之接合材料供給方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2635889B2 (ja) * | 1992-06-24 | 1997-07-30 | 株式会社東芝 | ダイボンディング装置 |
| JP2012069733A (ja) | 2010-09-24 | 2012-04-05 | Hitachi High-Tech Instruments Co Ltd | ダイボンダの治工具管理方法、および、ダイボンダ |
| JP5713787B2 (ja) * | 2011-04-28 | 2015-05-07 | 芝浦メカトロニクス株式会社 | 電子部品の実装装置 |
| KR101850738B1 (ko) * | 2011-05-19 | 2018-04-24 | 주식회사 탑 엔지니어링 | 실시간 동작 데이터의 ui화면을 구성하는 다이본더 |
| JP5989313B2 (ja) | 2011-09-15 | 2016-09-07 | ファスフォードテクノロジ株式会社 | ダイボンダ及びボンディング方法 |
| JP2014011287A (ja) * | 2012-06-29 | 2014-01-20 | Ohashi Seisakusho:Kk | 半導体チップの送り装置 |
| JP2015056596A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ及びダイボンダの構成方法 |
| JP6324778B2 (ja) * | 2014-03-18 | 2018-05-16 | ファスフォードテクノロジ株式会社 | ダイボンダの実装位置補正方法並びにダイボンダ及びボンディング方法 |
| JP2015195261A (ja) * | 2014-03-31 | 2015-11-05 | ファスフォードテクノロジ株式会社 | ダイボンダ及び半導体製造方法 |
-
2016
- 2016-03-17 JP JP2016053169A patent/JP6667326B2/ja active Active
- 2016-11-04 TW TW105135965A patent/TWI598968B/zh active
- 2016-11-17 KR KR1020160153596A patent/KR101923274B1/ko active Active
- 2016-11-18 CN CN201611028983.5A patent/CN107204302B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200620494A (en) * | 2004-11-26 | 2006-06-16 | Tsukuba Seiko Ltd | Die bonding device |
| TW200836456A (en) * | 2007-02-23 | 2008-09-01 | Toshiba Kk | Linear actuator and parts holding apparatus/die bonder apparatus utilizing same |
| TW200947572A (en) * | 2008-03-28 | 2009-11-16 | Shibaura Mechatronics Corp | Apparatus and method for mounting electronic component |
| TW201232679A (en) * | 2010-10-29 | 2012-08-01 | Hitachi High Tech Instr Co Ltd | Die bonding device, die bonding method and die bonding quality evaluation equipment |
| TW201304040A (zh) * | 2011-07-12 | 2013-01-16 | 日立先端科技儀器股份有限公司 | 黏晶機及黏晶機之接合材料供給方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170108786A (ko) | 2017-09-27 |
| CN107204302A (zh) | 2017-09-26 |
| CN107204302B (zh) | 2020-06-30 |
| JP2017168693A (ja) | 2017-09-21 |
| KR101923274B1 (ko) | 2018-11-28 |
| JP6667326B2 (ja) | 2020-03-18 |
| TW201810457A (zh) | 2018-03-16 |
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