CN107204302B - 芯片贴装机以及芯片贴装方法 - Google Patents

芯片贴装机以及芯片贴装方法 Download PDF

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Publication number
CN107204302B
CN107204302B CN201611028983.5A CN201611028983A CN107204302B CN 107204302 B CN107204302 B CN 107204302B CN 201611028983 A CN201611028983 A CN 201611028983A CN 107204302 B CN107204302 B CN 107204302B
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Prior art keywords
waveform
imaging
bare chip
chip
recognition
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CN201611028983.5A
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Chinese (zh)
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CN107204302A (zh
Inventor
牧浩
高野隆一
小桥英晴
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201611028983.5A 2016-03-17 2016-11-18 芯片贴装机以及芯片贴装方法 Active CN107204302B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-053169 2016-03-17
JP2016053169A JP6667326B2 (ja) 2016-03-17 2016-03-17 ダイボンダおよびボンディング方法

Publications (2)

Publication Number Publication Date
CN107204302A CN107204302A (zh) 2017-09-26
CN107204302B true CN107204302B (zh) 2020-06-30

Family

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CN201611028983.5A Active CN107204302B (zh) 2016-03-17 2016-11-18 芯片贴装机以及芯片贴装方法

Country Status (4)

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JP (1) JP6667326B2 (enExample)
KR (1) KR101923274B1 (enExample)
CN (1) CN107204302B (enExample)
TW (1) TWI598968B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
US11069555B2 (en) 2018-09-03 2021-07-20 Assembleon B.V. Die attach systems, and methods of attaching a die to a substrate
JP7291586B2 (ja) * 2019-09-19 2023-06-15 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
KR102377825B1 (ko) * 2020-03-06 2022-03-23 세메스 주식회사 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치
KR102377826B1 (ko) * 2020-03-06 2022-03-23 세메스 주식회사 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치
KR102654727B1 (ko) * 2021-07-21 2024-04-03 세메스 주식회사 다이 본딩 방법 및 다이 본딩 장치
WO2024018937A1 (ja) * 2022-07-21 2024-01-25 ボンドテック株式会社 接合方法および接合装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200620494A (en) * 2004-11-26 2006-06-16 Tsukuba Seiko Ltd Die bonding device
TW200836456A (en) * 2007-02-23 2008-09-01 Toshiba Kk Linear actuator and parts holding apparatus/die bonder apparatus utilizing same
TW201232679A (en) * 2010-10-29 2012-08-01 Hitachi High Tech Instr Co Ltd Die bonding device, die bonding method and die bonding quality evaluation equipment
KR20120129071A (ko) * 2011-05-19 2012-11-28 주식회사 탑 엔지니어링 실시간 동작 데이터의 ｕｉ화면을 구성하는 다이본더
JP2012234952A (ja) * 2011-04-28 2012-11-29 Shibaura Mechatronics Corp 電子部品の実装装置及び実装方法
TW201304040A (zh) * 2011-07-12 2013-01-16 日立先端科技儀器股份有限公司 黏晶機及黏晶機之接合材料供給方法
JP2014011287A (ja) * 2012-06-29 2014-01-20 Ohashi Seisakusho:Kk 半導体チップの送り装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635889B2 (ja) * 1992-06-24 1997-07-30 株式会社東芝 ダイボンディング装置
CN101939831A (zh) * 2008-03-28 2011-01-05 芝浦机械电子株式会社 电子部件的安装装置及安装方法
JP2012069733A (ja) 2010-09-24 2012-04-05 Hitachi High-Tech Instruments Co Ltd ダイボンダの治工具管理方法、および、ダイボンダ
JP5989313B2 (ja) 2011-09-15 2016-09-07 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
JP2015056596A (ja) * 2013-09-13 2015-03-23 株式会社日立ハイテクインスツルメンツ ダイボンダ及びダイボンダの構成方法
JP6324778B2 (ja) * 2014-03-18 2018-05-16 ファスフォードテクノロジ株式会社 ダイボンダの実装位置補正方法並びにダイボンダ及びボンディング方法
JP2015195261A (ja) * 2014-03-31 2015-11-05 ファスフォードテクノロジ株式会社 ダイボンダ及び半導体製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200620494A (en) * 2004-11-26 2006-06-16 Tsukuba Seiko Ltd Die bonding device
TW200836456A (en) * 2007-02-23 2008-09-01 Toshiba Kk Linear actuator and parts holding apparatus/die bonder apparatus utilizing same
TW201232679A (en) * 2010-10-29 2012-08-01 Hitachi High Tech Instr Co Ltd Die bonding device, die bonding method and die bonding quality evaluation equipment
JP2012234952A (ja) * 2011-04-28 2012-11-29 Shibaura Mechatronics Corp 電子部品の実装装置及び実装方法
KR20120129071A (ko) * 2011-05-19 2012-11-28 주식회사 탑 엔지니어링 실시간 동작 데이터의 ｕｉ화면을 구성하는 다이본더
TW201304040A (zh) * 2011-07-12 2013-01-16 日立先端科技儀器股份有限公司 黏晶機及黏晶機之接合材料供給方法
JP2014011287A (ja) * 2012-06-29 2014-01-20 Ohashi Seisakusho:Kk 半導体チップの送り装置

Also Published As

Publication number Publication date
TWI598968B (zh) 2017-09-11
JP2017168693A (ja) 2017-09-21
KR101923274B1 (ko) 2018-11-28
JP6667326B2 (ja) 2020-03-18
CN107204302A (zh) 2017-09-26
TW201810457A (zh) 2018-03-16
KR20170108786A (ko) 2017-09-27

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