TWI597251B - 可由熔合形成的無鹼且熱膨脹係數適中的玻璃 - Google Patents
可由熔合形成的無鹼且熱膨脹係數適中的玻璃 Download PDFInfo
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- TWI597251B TWI597251B TW105118424A TW105118424A TWI597251B TW I597251 B TWI597251 B TW I597251B TW 105118424 A TW105118424 A TW 105118424A TW 105118424 A TW105118424 A TW 105118424A TW I597251 B TWI597251 B TW I597251B
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- 239000011521 glass Substances 0.000 title claims description 96
- 230000004927 fusion Effects 0.000 title description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 13
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 26
- 239000011734 sodium Substances 0.000 description 23
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 21
- 229910052708 sodium Inorganic materials 0.000 description 21
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 239000002346 layers by function Substances 0.000 description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052700 potassium Inorganic materials 0.000 description 8
- 239000011591 potassium Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 5
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000006060 molten glass Substances 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 aluminum silicates Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008395 clarifying agent Substances 0.000 description 1
- 238000007708 concentric cylinder viscometry Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007571 dilatometry Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 238000007526 fusion splicing Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Description
此申請案依照專利法主張美國臨時申請案第61/522956號(於2011年8月12日提出申請)及美國申請案第13/569756(於2012年8月8日提出申請)之優先權,本申請案仰賴該等美國臨時申請案之內文,且該等美國臨時申請案之全文以參考形式併入本文中。
多個實施例大體上關於無鹼玻璃,尤其是關於無鹼、高應變點及/或膨脹係數適中的可由熔合形成的鋁矽酸鹽及/或硼鋁矽酸鹽玻璃,這些玻璃可用於光伏應用,例如薄膜光伏元件。
用於銅銦鎵二硒(CIGS)光伏模組的基材玻璃一般含有Na2O,因為已顯示Na從玻璃擴散進入CIGS層造成顯著的模組效能之改善。然而,由於在CIGS沉積/結晶製程期間難以控制鈉擴散的量,因此這些元件的一些製造業者偏愛在CIGS沉積之前沉積適合的鈉化合物(例如NaF)層,在此案例中,需要透過使用阻障層遏制任何存在於基材玻璃中的鹼。再者,於碲化鎘(CdTe)
光伏模組的案例中,CdTe層的任何鈉污染對於模組效能是有害的,因此一般含鈉的基材玻璃(例如鹼石灰玻璃)需要阻障層的存在。於是,將無鹼基材玻璃用於CIGS、矽、晶圓式(wafered)結晶矽、抑或CdTe模組可避免需要阻障層。
在此揭露的適中熱膨脹係數及/或無鹼的玻璃尤其相容於CdTe光伏元件,且可增加電池效能。
一個實施例是一種玻璃,以莫耳百分比計算,包含:55至75百分比的SiO2;5至20百分比的Al2O3;0至15百分比的B2O3;0至10百分比的MgO;0至15百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO;其中MgO+CaO+BaO+SrO為13至20百分比,其中該玻璃實質上無鹼金屬,且其中該玻璃所具有的液界黏度(Iiquidus viscosity)為100,000泊或更大。
這些玻璃是用於銅銦鎵二硒(CIGS)光伏模組中的有利材料,在該等模組中,需要最適化電池效能的鈉不源自基材玻璃,反而是源自分開的沉積層,該沉
積層由諸如NaF的含鈉材料所構成。當前的CIGS模組基材一般是由鹼石灰玻璃片製成,該玻璃片已由浮式製程所製造。然而,使用高應變點玻璃基材能夠實現更高溫的CIGS處理,世人期望該處理轉換成電池效能中的期望的改善。
因此,此述的無鹼玻璃之特徵可在於600℃以上的應變點以及範圍從35 x 10-7/℃至50 x 10-7/℃的熱膨脹係數,以盡量減少基材與CIGS層之間的熱膨脹不匹配,或較佳地匹配CdTe的熱膨脹。
最後,本發明的較佳組成物具有遠超過650℃的應變點,因而能使CIGS或CdTe沉積/結晶在最高的可能處理溫度下執行,而再度造成額外效能。
本發明額外的特徵與優點將於下文的【實施方式】中提出,並且在某種程度上那些熟悉本領域之技術人員從該敘述中將很容易理解該些特徵與優點,或藉由實施在此於隨後的【實施方式】及請求項所述之本發明,而能夠認識該些特徵與優點。
應瞭解,前文的【發明內容】與下文的【實施方式】都僅是示範本發明,申請人希望前文的【發明內容】與下文的【實施方式】提供概述或框架以使世人理解本發明所主張之本質與特質。
在此納入附圖以提供對本發明之進一步之理解,且該等附圖被納入本說明書並且構成本說明書之一
部分。該等圖式繪示了本發明的一或多個實施例,並連同說明書以解釋本發明之原則與操作。
100‧‧‧光伏元件
10‧‧‧基材
12‧‧‧導電材料
14‧‧‧阻障層
16‧‧‧光伏介質
18‧‧‧上蓋板
單獨由前述的實施方式抑或結合伴隨的圖式,能夠瞭解本發明。
第1圖是根據一些實施例的光伏元件的特徵之示意圖。
現在請詳閱本發明之各實施例。
如在此所用,「基材」之用語可用於描述基材抑或上蓋板,這取決於光伏電池的配置方式。例如,當組裝至光伏電池時基材是在光伏電池的光入射側,則該基材是上蓋板。該上蓋板可提供光伏材料保護以防衝擊與環境性的劣化,同時使適當波長的太陽光譜能夠穿透。進一步而言,多個光伏電池可排列成光伏模組。光伏元件可描述電池、模組、抑或前述二者。
如在此使用,「鄰接」之用語可定義成處於緊密接近的狀態。鄰接的結構可彼此實體接觸或可不彼此實體接觸。鄰接的結構可具有配置在該鄰接的結構之間的其他層及/或結構。
再者,當在此記載數值範圍(包含上限值與下限值)時,除非在特定狀況中另外陳述,否則申請人
希望該範圍包括該範圍的端點,以及在該範圍內的所有整數與分數。申請人不希望將本發明的範疇限制在界定範圍時所記載的特定數值。另外,當數量、濃度、或其他數值或參數被給定為一範圍、一或多個較佳範圍、或一系列的較佳上限值與較佳下限值時,應將此舉理解為特定地揭露由任何一對較高的範圍極限值(或較佳數值)及較低的範圍極限值(或較佳數值)所形成的所有範圍,不管是否分別揭露這樣的幾對較高的範圍極限值(或較佳數值)及較低的範圍極限值(或較佳數值)。最後,當「約(about)」之用語用於描述一範圍的數值或端點時,應該將所揭露的內容理解成包括所指的特定數值或端點。
如在此所用,「約」之用語意味數量(amount)、尺寸、組成配方、參數、與其他份量(quantity)及特性並不精確且無須精確,而是如期望般可為近似及/或較大或較小,而反映容忍度、轉換因子、四捨五入、測量誤差與類似物、及發明所屬技術領域中具有通常知識者已知的其他因素。大體而言,數量、尺寸、組成配方、參數、或其他份量及特性為大約或近似,無論是否明確地陳述該數量、尺寸、組成配方、參數、或其他份量及特性確實如此。
如在此使用,用語「或」是包括性的(inclusive);詳言之,「A或B」之措詞意思是「A、
B、或者是A與B二者」。排除性的「或」在此是透過諸如「A抑或B」及「A或B之一者」之用語所指定。
不定冠詞「一」用於描述本發明的元件與部件。使用這些冠詞意味存在這些元件或部件的一者或至少一者。雖然這些冠詞在習知上用於表明所修飾的名詞是單數名詞,然而在此使用時,除非於特定例子中另外陳述,否則該冠詞也包括複數。同樣,當在此使用時,定冠詞「該」也表明所修飾的名詞可為單數或複數,除非在特定例子中另外陳述。
應注意,請求項中的一或多個請求項可利用用語「其中」做為連接詞。為了界定本發明,請注意將此用語導入請求項中做為開放式(open-ended)連接詞,此開放式連接詞用於導入將結構的一系列特徵的記載,且應以更為通用的開放式前言用語「包含」之方式解讀該開放式連接詞。
當在此使用時,具有0wt%的化合物的玻璃組成物界定為意味該化合物、分子、或元素並非是刻意地添加至該組成物,而是,該組成物仍可包含該化合物,該化合物一般為微量(tramp amount)或痕量(trace amount)。類似地,「實質上無鹼金屬」、「實質上無鈉」、「實質上無鉀」、「無鈉」、「無鹼」、「無鉀」、或類似用語界定為意味著該化合物、分子、或元素並非刻意地添加至該組成物中,而是該組成物仍可包含鈉、鹼、或鉀,但近乎微量或痕量。這些微量並非有
意地納入批料中,而是可以較次要的量存在於用以提供玻璃主要成分的原料中做為雜質。
一個實施例是一種玻璃,以莫耳百分比計算,包含:55至75百分比的SiO2;5至20百分比的Al2O3;0至15百分比的B2O3;0至10百分比的MIgO;0至15百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO;其中MgO+CaO+BaO+SrO為13至20百分比,其中該玻璃實質上無鹼金屬,且其中該玻璃所具有的液界黏度為100,000泊或更大。
一個實施例中,該玻璃以莫耳百分比計算,包含:55至75百分比的SiO2;5至13百分比的Al2O3;0至15百分比的B2O3;0至10百分比的MgO;0至15百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO。
一個實施例中,該玻璃以莫耳百分比計算,包含:55至75百分比的SiO2;0至20百分比的Al2O3;6至12百分比的B2O3;0至10百分比的MgO;0至15百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO。
一個實施例中,該玻璃以莫耳百分比計算,包含:55至75百分比的SiO2;5至13百分比的Al2O3;6至12百分比的B2O3;0至10百分比的MgO;0至15百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO。
一個實施例中,該玻璃以莫耳百分比計算,包含:55至75百分比的SiO2;8至13百分比的Al2O3;6至12百分比的B2O3;0至7百分比的MgO;
0至12百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO。
一個實施例中,該玻璃以莫耳百分比計算,包含:58至69百分比的SiO2;8至13百分比的Al2O3;6至12百分比的B2O3;0至7百分比的MgO;0至12百分比的SrO;0至16百分比的CaO;以及0至9百分比的BaO。
一個實施例中,該玻璃以莫耳百分比計算,包含:73至75百分比的SiO2;6至9百分比的Al2O3;0百分比的B2O3;1至3百分比的MgO;0百分比的SrO;13至16百分比的CaO;以及1至3百分比的BaO。
一個實施例中,該玻璃以莫耳百分比計算,包含:60至67百分比的SiO2;
8至12百分比的Al2O3;6至12百分比的B2O3;0.05至7百分比的MgO;0至12百分比的SrO;5至9百分比的CaO;以及0.5至8百分比的BaO。
該玻璃實質上無鹼金屬,例如,鹼的含量可以是0.05莫耳百分比或更低,例如零莫耳百分比,根據一些實施例,該玻璃無有意添加的鹼金屬。
該玻璃實質上無鈉,例如,鈉含量可以是0.05莫耳百分比或更低,例如零莫耳百分比。根據一些實施例,該玻璃無有意添加的鈉。
該玻璃實質上無鉀,例如,鉀含量可以是0.05莫耳百分比或更低,例如零莫耳百分比。根據一些實施例,該玻璃無有意添加的鉀。
該玻璃實質上無鈉與鉀,例如,鈉含量可以是0.05莫耳百分比或更低,例如零莫耳百分比。根據一些實施例,該玻璃無有意添加的鈉與鉀。
一些實施例中,該玻璃包含55至75百分比的SiO2,例如58至69百分比的SiO2,或例如60至67百分比的SiO2,或例如73至75百分比的SiO2。
如前文所述,根據一些實施例,該等玻璃包含0至15百分比的B2O3,例如6至12百分比。相對於不
含B2O3的玻璃,將B2O3添加至玻璃以減少熔融溫度,減少液界溫度、增加液界黏度、以及改善機械持久性。
根據一些實施例,該玻璃包含量為從13至20莫耳百分比的MgO+CaO+BaO+SrO。可將MgO添加至玻璃以減少熔融溫度以及增加應變點。相對於其他鹼土(例如CaO、SrO、BaO),MgO可能會不利地降低CTE,所以可進行其他調整以使CTE在期望範圍內。適合的調整的範例包括犧牲CaO而增加SrO。
一些實施例中,該等玻璃可包含0至15百分比的SrO,例如大於0至15莫耳百分比的SrO,例如1至12莫耳百分比的SrO。某些實施例中,儘管當然可存在SrO做為其他批次材料中的雜質,該玻璃不含刻意批次處理的SrO。SrO造成較高的熱膨脹係數,且SrO與CaO的相對比例可經調控以改善液界溫度,因而改善液界黏度。SrO不如CaO或MgO般有效用於改善應變點,且以SrO取代CaO或MgO之任一者傾向引發熔融溫度增加。BaO具有與SrO類似的熱膨脹係數,或甚至更大的熱膨脹係數。BaO傾向降低熔融溫度並且降低液界溫度。
一些實施例中,該等玻璃包含0至16莫耳百分比的CaO,例如大於0至15,或例如0至12莫耳百分比的CaO,例如0.5至9莫耳百分比的CaO。CaO造成較高的應變點、較低的密度、以及較低的熔融溫度。
根據一個實施例,該玻璃進一步包含0至0.5莫耳百分比的澄清劑。該澄清劑可為SnO2。
根據一個實施例,該玻璃進一步包含0至2莫耳百分比的下述物質:TiO2、MnO、ZnO、Nb2O5、Ta2O5、ZrO2、La2O3、Y2O3、P2O5、或前述物質之組合。可將這些視情況任選的成分用於進一步修整玻璃性質。
一些實施例中,該玻璃實質上無Sb2O3、As2O3、或前述材料之組合,例如,該玻璃包含0.05莫耳百分比或更低的Sb2O3、As2O3、或前述材料之組合。例如,該玻璃可包含0莫耳百分比的Sb2O3、As2O3、或前述材料之組合。
因此,一個實施例中,該玻璃具有一應變點,該應變點為600℃或更高,例如610℃或更高,例如620℃或更高,例如630℃或更高,例如640℃或更高,例如650℃或更高。一些實施例中,該玻璃具有一熱膨脹係數,該熱膨脹係數為35 x 10-7/℃至50 x 10-7/℃,例如39 x 10-7/℃至50 x 10-7/℃。一個實施例中,該玻璃具有35 x 10-7/℃至50 x 10-7/℃之熱膨脹係數以及600℃或更高的應變點。
該玻璃可由熔合形成,如熔合形成玻璃之技藝中已知的方式。熔合曳引製程使用等靜壓管(isopipe),該等靜壓管具有用於接收熔融玻璃原料的通道。該通道具有堰(weir),該堰在該通道兩側上沿著通道長邊於頂部開啟。當該通道填充有熔融材料時,該熔融玻璃溢流過堰。由於重力之故,熔融玻璃沿
著等靜壓管的外側表面向下流動。這些外側表面向下且向內延伸,使得他們在曳引槽下方的邊緣處會合。該兩個流動的玻璃表面在此邊緣會合,而熔合且形成單一個流動的片狀物。熔合曳引方法所提供的優點在於,由於覆於通道上流動的兩個玻璃膜熔合在一起,所得的玻璃片的外側表面無一與設備的任何零件接觸。因此,表面性質不會受這樣的接觸所影響。
具有大於或等於100kP(即100,000泊)之液界黏度的玻璃通常是可透過熔合形成。液界黏度範圍從10kP至低於100kP的玻璃通常可由浮式法形成,而非可由熔合形成。一些實施例是具有以下性質的無鹼玻璃:Tstr>630℃,α範圍是4-5ppm/℃,以及液界黏度(ηliq)超過100,000泊。就此而言,理想上,他們適合透過熔合製程形成為片狀物。再者,這些玻璃中的許多玻璃也具有遠低於1550℃的200泊溫度(T200),使得他們是用於低成本樣式的熔合製程的理想候選物。
一個實施例中,該玻璃是片狀物之形式。該片狀物形式的玻璃可被強化,例如被熱回火。
根據一個實施例,該玻璃在光學上透明。
一個實施例中,如第1圖所示,光伏元件100包含片狀物10形式的玻璃。光伏元件可包含超過一個玻璃片,該玻璃片例如做為基材及/或做為上蓋板。一個實施例中,光伏元件100包含做為基材10或上蓋板18的玻
璃片、鄰接該基材的導電材料12、以及鄰接該導電材料的活性光伏介質16。一個實施例中,該元件包含兩個玻璃片,一個做為上蓋板且一個做為基材,這兩個玻璃片具有在此所述的組成物。該功能層可包含銅銦鎵二硒、非晶矽、結晶矽、一或多個結晶矽晶圓、碲化鎘、或前述材料的組合,該功能層鄰接基材或上蓋板。一個實施例中,活性光伏介質包含CIGS層。一個實施例中,活性光伏介質包含碲化鎘(CdTe)層。一個實施例中,光伏元件包含功能層,該功能層包含銅銦鎵二硒或碲化鎘。一個實施例中,該光伏元件中的該功能層是銅銦鎵二硒。一個實施例中,該功能層是碲化鎘。
根據一個實施例,該光伏元件100進一步包含一或多個中間層14(諸如含鈉層,例如包含NaF之層)或阻障層,該中間層或阻障層配置在該上蓋板(或基材)與該功能層之間,或配置成鄰接該上蓋板(或基材)與該功能層。一個實施例中,該光伏元件進一步包含阻障層,該阻障層配置在該上蓋板(或基材)與該透明導電氧化物(TCO)層之間,或配置成鄰接該上蓋板(或基材)與該TCO層,其中該TCO層配置在該功能層與該阻障層之間,或配置成鄰接該功能層與該阻障層。TCO可存在於包含CdTe功能層的光伏元件中。一個實施例中,該阻障層直接配置在該玻璃上。一個實施例中,該元件包含多個中間層以及鄰接的鈉調節(metering)層,
該中間層諸如含鈉層(例如包含NaF之層),該中間層以及鈉調節層位在上蓋板與基材之間。
一個實施例中,該玻璃片在光學上透明。一個實施例中,做為基材及/或上蓋板的玻璃片在光學上透明。
根據一些實施例,玻璃片具有4.0mm或更低的厚度,例如3.5mm或更低,例如3.2mm或更低,例如3.0mm或更低,例如2.5mm或更低,例如2.0mm或更低,例如1.9mm或更低,例如1.8mm或更低,例如1.5mm或更低,例如1.1mm或更低,例如0.5mm至2.0mm,例如0.5mm至1.1mm,例如0.7mm至1.1mm。雖然這些都是示範性厚度,但該玻璃片可具有任何範圍從0.1mm開始上達4.0mm(且包括4.0mm)並且包括小數位的數值之厚度。
無鹼玻璃逐漸成為CdTe、CIGS模組各別的上蓋板、基材之受到注目的候選物。前者案例中,避免膜堆疊的CdTe與導電氧化物層的鹼污染。再者,由於消除阻障層而使製程簡化(例如,在習知鹼石灰玻璃案例中需要阻障層)。在後者案例中,CIGS模組製造業者更能夠透過沉積分開的含鈉層而控制使吸收劑性能最佳化所需的鈉量,由於它的專屬組成物與厚度,該含鈉層造成鈉遞送至CIGS層更可再現。
表1、表2、表3、表4、表5、表6、及表7顯示根據本發明之實施例的示範性玻璃。一些示範性玻璃的性質數據也顯示於表1、表2、表3、表4、表5、表6、及表7中。在表中,Tstr(℃)是應變點,該應變點是在黏度等於1014.7P時的溫度,該黏度是如樑彎折(beam bending)或纖維伸長(fiber elongation)所測量。表中的α(10-7/℃)是熱膨脹係數(CTE),該熱膨脹係數是從0至300℃抑或從25至300℃(取決於測量方式)的尺寸變化的量。CTE一般是由膨脹測量術所測量。ρ(g/cc)是密度,該密度由亞基米德方法(ASTM C693)測量。T200(℃)是兩百泊(P)的溫度。這是當熔融物的黏度是200P時的溫度,由HTV(高溫黏度)測量方法所測量,該測量方法使用同心柱黏度測量法(concentric cylinder viscometry)。Tliq(℃)是液界溫度。這是在標準梯度舟液界測量法(standard gradient boat liquidus measurement,ASTM C829-81)中觀察到第一晶體之處的溫度。ηliq是以千泊表達的液界黏度;因此100kP=100,000P。這是對應液界溫度的熔融物之黏度。
對於熟習此技藝者而言,將明瞭可對本發明製做各種修飾形式與變化形式,但不可背離本發明的精神與範疇。因此,申請人希望本發明涵蓋此發明的修飾形式與變化形式,只要他們在所附的申請專利範圍及他們的等效形式的範疇內即可。
100‧‧‧光伏元件
10‧‧‧基材及/或上蓋板
12‧‧‧導電材料
14‧‧‧阻障層
16‧‧‧光伏介質
Claims (13)
- 一種玻璃,以莫耳百分比計算,包括:58至62百分比的SiO2;8至13百分比的Al2O3;6至12百分比的B2O3;0至7百分比的MgO;0至12百分比的SrO;0至16百分比的CaO;以及2至9百分比的BaO;其中MgO+CaO+BaO+SrO為大於14至20百分比,且其中該玻璃實質上無鹼金屬,且其中該玻璃是以1150℃或低於1150℃之液界溫度(liquidus temperature)為特徵。
- 如請求項1所述之玻璃,包括2至11百分比的CaO。
- 如請求項1所述之玻璃,包括2至3.6百分比的BaO。
- 如請求項1所述之玻璃,其中該玻璃所具有的液界黏度為100,000泊或大於100,000泊。
- 如請求項1所述之玻璃,其中MgO+CaO+BaO+SrO為16至20百分比。
- 如請求項1所述之玻璃,具有一熱膨脹係數,該熱膨脹係數在從約35 x 10-7/℃至約50 x 10-7/℃的範圍內。
- 如請求項1所述之玻璃,包括0至2莫耳百分比的下述物質:TiO2、MnO、ZnO、Nb2O5、Ta2O5、ZrO2、La2O3、Y2O3、或P2O5,或前述物質之組合。
- 如請求項1所述之玻璃,其中該玻璃是片狀物之形式。
- 如請求項1所述之玻璃,包括62莫耳百分比的SiO2。
- 如請求項1所述之玻璃,以莫耳百分比計算,包括:62百分比的SiO2;11.1百分比的Al2O3;10.7百分比的B2O3;4.6百分比的MgO;3.6百分比的SrO;5.4百分比的CaO;以及2.4百分比的BaO。
- 如請求項1所述之玻璃,以莫耳百分比計算,包括:62百分比的SiO2;10.3百分比的Al2O3;10.1百分比的B2O3; 4.2百分比的MgO;2.9百分比的SrO;5.6百分比的CaO;以及4.9百分比的BaO。
- 如請求項1所述之玻璃,以莫耳百分比計算,包括:62百分比的SiO2;10.8百分比的Al2O3;10.4百分比的B2O3;4.4百分比的MgO;3.3百分比的SrO;5.5百分比的CaO;以及3.7百分比的BaO。
- 一種光伏元件,包括如請求項1所述之玻璃。
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US201161522956P | 2011-08-12 | 2011-08-12 | |
US13/569,756 US8975199B2 (en) | 2011-08-12 | 2012-08-08 | Fusion formable alkali-free intermediate thermal expansion coefficient glass |
Publications (2)
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Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9394196B2 (en) | 2006-12-14 | 2016-07-19 | Ppg Industries Ohio, Inc. | Low density and high strength fiber glass for reinforcement applications |
US7829490B2 (en) * | 2006-12-14 | 2010-11-09 | Ppg Industries Ohio, Inc. | Low dielectric glass and fiber glass for electronic applications |
US9156728B2 (en) | 2006-12-14 | 2015-10-13 | Ppg Industries Ohio, Inc. | Low density and high strength fiber glass for ballistic applications |
US9056786B2 (en) | 2006-12-14 | 2015-06-16 | Ppg Industries Ohio, Inc. | Low density and high strength fiber glass for ballistic applications |
US8697591B2 (en) * | 2006-12-14 | 2014-04-15 | Ppg Industries Ohio, Inc. | Low dielectric glass and fiber glass |
US8445394B2 (en) * | 2008-10-06 | 2013-05-21 | Corning Incorporated | Intermediate thermal expansion coefficient glass |
US8975199B2 (en) * | 2011-08-12 | 2015-03-10 | Corsam Technologies Llc | Fusion formable alkali-free intermediate thermal expansion coefficient glass |
US8796165B2 (en) * | 2010-11-30 | 2014-08-05 | Corning Incorporated | Alkaline earth alumino-borosilicate crack resistant glass |
TWI614227B (zh) * | 2012-02-29 | 2018-02-11 | 康寧公司 | 低cte之無鹼硼鋁矽酸鹽玻璃組成物及包含其之玻璃物件 |
CN113060935A (zh) | 2013-08-15 | 2021-07-02 | 康宁股份有限公司 | 掺杂有碱金属和不含碱金属的硼铝硅酸盐玻璃 |
KR102255630B1 (ko) | 2013-08-15 | 2021-05-25 | 코닝 인코포레이티드 | 중간 내지 높은 cte 유리 및 이를 포함하는 유리 물품 |
CN104211300A (zh) * | 2013-08-27 | 2014-12-17 | 东旭集团有限公司 | 一种高比模数的玻璃基板的配方 |
CN104326662B (zh) * | 2013-12-31 | 2017-07-04 | 东旭集团有限公司 | 一种不含硼的无碱铝硅酸盐玻璃 |
JP6323139B2 (ja) * | 2014-04-17 | 2018-05-16 | 旭硝子株式会社 | 医薬品または化粧品の容器用ガラス |
US20170226000A1 (en) * | 2014-08-13 | 2017-08-10 | Corning Incorporated | Intermediate cte glasses and glass articles comprising the same |
US20160200618A1 (en) * | 2015-01-08 | 2016-07-14 | Corning Incorporated | Method and apparatus for adding thermal energy to a glass melt |
CN105601105B (zh) * | 2015-12-30 | 2018-09-07 | 芜湖东旭光电装备技术有限公司 | 一种玻璃用组合物、低脆性无碱玻璃及其制备方法和应用 |
TW202304826A (zh) * | 2016-02-22 | 2023-02-01 | 美商康寧公司 | 無鹼硼鋁矽酸鹽玻璃 |
WO2017204167A1 (ja) * | 2016-05-25 | 2017-11-30 | 旭硝子株式会社 | 無アルカリガラス基板、積層基板、およびガラス基板の製造方法 |
CN107382052B (zh) * | 2017-08-25 | 2020-02-07 | 郑州大学 | 一种无碱硅酸盐玻璃及其制备方法和应用 |
US10480440B2 (en) * | 2017-11-13 | 2019-11-19 | GM Global Technology Operations LLC | Particulate matter sensor heat cover |
NL2020896B1 (en) | 2018-05-08 | 2019-11-14 | Corning Inc | Water-containing glass-based articles with high indentation cracking threshold |
CN116062993A (zh) | 2018-06-19 | 2023-05-05 | 康宁公司 | 高应变点且高杨氏模量玻璃 |
CN109485254A (zh) * | 2018-11-15 | 2019-03-19 | 东旭科技集团有限公司 | 无碱铝硅酸盐玻璃用组合物、无碱铝硅酸盐玻璃及其制备方法和应用 |
TW202026261A (zh) * | 2018-11-16 | 2020-07-16 | 美商康寧公司 | 可水蒸氣強化無鹼玻璃組成物 |
TW202026257A (zh) | 2018-11-16 | 2020-07-16 | 美商康寧公司 | 用於透過蒸氣處理而強化之玻璃成分及方法 |
CN117361875A (zh) | 2019-05-16 | 2024-01-09 | 康宁股份有限公司 | 具有蒸汽处理雾度抗性的玻璃组合物及其方法 |
KR20220024552A (ko) * | 2019-06-13 | 2022-03-03 | 코닝 인코포레이티드 | 인을 포함하는 디스플레이 조성물들 및 낮은 이온 전계 강도 조절제들 |
CN111302619B (zh) * | 2020-04-17 | 2022-01-14 | 中南大学 | 一种无碱铝硼硅酸盐玻璃及其制备方法 |
CN114361279B (zh) * | 2022-01-11 | 2024-01-05 | 奎达高分子材料科技(宜兴)有限公司 | 一种pvb双玻光伏组件结构及压装工艺 |
WO2023244750A1 (en) * | 2022-06-15 | 2023-12-21 | Corning Incorporated | Solar devices with borosilicate glass and methods of the same |
Family Cites Families (123)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4012263A (en) * | 1975-02-10 | 1977-03-15 | Owens-Illinois, Inc. | Alkali-free glasses |
US4536607A (en) | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
JPS6374935A (ja) * | 1986-09-17 | 1988-04-05 | Nippon Electric Glass Co Ltd | 耐薬品性に優れたガラス基板 |
JPS6461329A (en) * | 1987-08-31 | 1989-03-08 | Central Glass Co Ltd | Alkali-free glass |
US4824808A (en) * | 1987-11-09 | 1989-04-25 | Corning Glass Works | Substrate glass for liquid crystal displays |
JPH0624998B2 (ja) * | 1988-11-11 | 1994-04-06 | セントラル硝子株式会社 | 無アルカリガラス |
US4980318A (en) | 1989-05-10 | 1990-12-25 | Corning Incorporated | High refractive index photochromic glasses |
JP2743333B2 (ja) | 1989-10-31 | 1998-04-22 | 日本電気硝子株式会社 | 基板用ガラス |
JP3144823B2 (ja) * | 1991-04-26 | 2001-03-12 | 旭硝子株式会社 | 無アルカリガラス |
JP3083586B2 (ja) * | 1991-04-26 | 2000-09-04 | 旭硝子株式会社 | 無アルカリガラス |
JP2871163B2 (ja) * | 1991-04-26 | 1999-03-17 | 日本板硝子株式会社 | 無アルカリガラス |
US5116788A (en) * | 1991-08-12 | 1992-05-26 | Corning Incorporated | Alkaline earth aluminoborosilicate glasses for flat panel displays |
US5116787A (en) * | 1991-08-12 | 1992-05-26 | Corning Incorporated | High alumina, alkaline earth borosilicate glasses for flat panel displays |
US5374595A (en) * | 1993-01-22 | 1994-12-20 | Corning Incorporated | High liquidus viscosity glasses for flat panel displays |
US5326730A (en) * | 1993-01-22 | 1994-07-05 | Corning Incorporated | Barium aluminosilicate glasses |
US5508237A (en) * | 1994-03-14 | 1996-04-16 | Corning Incorporated | Flat panel display |
JP3831957B2 (ja) | 1994-09-14 | 2006-10-11 | 旭硝子株式会社 | ガラス組成物及びプラズマディスプレー用基板 |
US5631195A (en) | 1994-09-14 | 1997-05-20 | Asahi Glass Company Ltd. | Glass composition and substrate for plasma display |
US6169047B1 (en) * | 1994-11-30 | 2001-01-02 | Asahi Glass Company Ltd. | Alkali-free glass and flat panel display |
DE69508706T2 (de) * | 1994-11-30 | 1999-12-02 | Asahi Glass Co Ltd | Alkalifreies Glas und Flachbildschirm |
US5885914A (en) * | 1995-07-28 | 1999-03-23 | Asahi Glass Company Ltd. | Alkali-free glass and display substrate |
JP3804111B2 (ja) * | 1995-07-28 | 2006-08-02 | 旭硝子株式会社 | 無アルカリガラス及びディスプレイ用基板 |
WO1997011919A1 (fr) * | 1995-09-28 | 1997-04-03 | Nippon Electric Glass Co., Ltd. | Substrat de verre exempt d'alcalis |
DE19603698C1 (de) * | 1996-02-02 | 1997-08-28 | Schott Glaswerke | Alkalifreies Aluminoborosilicatglas und dessen Verwendung |
US5908794A (en) | 1996-03-15 | 1999-06-01 | Asahi Glass Company Ltd. | Glass composition for a substrate |
DE19617344C1 (de) * | 1996-04-30 | 1997-08-07 | Schott Glaswerke | Alkalifreies Aluminoborosilicatglas und seine Verwendung |
US6508083B1 (en) * | 1996-08-21 | 2003-01-21 | Nippon Electric Glass Co., Ltd. | Alkali-free glass and method for producing the same |
JPH10152339A (ja) | 1996-09-27 | 1998-06-09 | Nippon Sheet Glass Co Ltd | 耐熱性ガラス組成物 |
US6137048A (en) | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
US6060168A (en) | 1996-12-17 | 2000-05-09 | Corning Incorporated | Glasses for display panels and photovoltaic devices |
FR2758550B1 (fr) | 1997-01-17 | 1999-02-12 | Saint Gobain Vitrage | Compositions de verre silico-sodo-calcique et leurs applications |
WO1998033747A1 (en) | 1997-02-03 | 1998-08-06 | Corning Incorporated | Improved photochromic glasses |
FR2759077B1 (fr) | 1997-02-03 | 1999-04-23 | Corning Sa | Verres photochromiques ameliores |
DE19739912C1 (de) * | 1997-09-11 | 1998-12-10 | Schott Glas | Alkalifreies Aluminoborosilicatglas und dessen Verwendung |
JPH11135819A (ja) | 1997-10-31 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 化合物薄膜太陽電池 |
JPH11180728A (ja) | 1997-12-22 | 1999-07-06 | Central Glass Co Ltd | ディスプレイ装置用基板ガラス組成物 |
JPH11180727A (ja) | 1997-12-22 | 1999-07-06 | Central Glass Co Ltd | 表示装置用基板ガラス組成物 |
JP4320823B2 (ja) | 1998-02-27 | 2009-08-26 | 旭硝子株式会社 | 基板用ガラス組成物 |
JPH11310433A (ja) | 1998-04-27 | 1999-11-09 | Central Glass Co Ltd | 表示装置用基板ガラス |
EP0953549B1 (en) | 1998-04-28 | 2002-09-11 | Asahi Glass Company Ltd. | Plate glass and substrate glass for electronics |
JPH11335133A (ja) | 1998-05-27 | 1999-12-07 | Central Glass Co Ltd | 表示装置用基板ガラス |
US6319867B1 (en) | 1998-11-30 | 2001-11-20 | Corning Incorporated | Glasses for flat panel displays |
US6207603B1 (en) | 1999-02-05 | 2001-03-27 | Corning Incorporated | Solar cell cover glass |
JP3056200B1 (ja) | 1999-02-26 | 2000-06-26 | 鐘淵化学工業株式会社 | 薄膜光電変換装置の製造方法 |
DE19916296C1 (de) * | 1999-04-12 | 2001-01-18 | Schott Glas | Alkalifreies Aluminoborosilicatglas und dessen Verwendung |
DE19934072C2 (de) | 1999-07-23 | 2001-06-13 | Schott Glas | Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung |
DE19939789A1 (de) | 1999-08-21 | 2001-02-22 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und deren Verwendungen |
DE19942259C1 (de) | 1999-09-04 | 2001-05-17 | Schott Glas | Erdalkalialuminoborosilicatglas und dessen Verwendungen |
DE10000837C1 (de) * | 2000-01-12 | 2001-05-31 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und ihre Verwendungen |
DE10000836B4 (de) | 2000-01-12 | 2005-03-17 | Schott Ag | Alkalifreies Aluminoborosilicatglas und dessen Verwendungen |
DE10000838B4 (de) | 2000-01-12 | 2005-03-17 | Schott Ag | Alkalifreies Aluminoborosilicatglas und dessen Verwendungen |
DE10000839C1 (de) | 2000-01-12 | 2001-05-10 | Schott Glas | Alkalifreies Aluminoborosilicatglas und dessen Verwendungen |
DE10005088C1 (de) | 2000-02-04 | 2001-03-15 | Schott Glas | Alkalihaltiges Aluminoborosilicatglas und seine Verwendung |
DE10017610C2 (de) * | 2000-03-30 | 2002-10-31 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung eines Solarmoduls mit integriert serienverschalteten Dünnschicht-Solarzellen und Verwendung davon |
WO2001078154A2 (en) | 2000-04-10 | 2001-10-18 | Davis, Joseph & Negley | Preparation of cigs-based solar cells using a buffered electrodeposition bath |
US7211957B2 (en) * | 2000-05-05 | 2007-05-01 | Telux-Spezialglas Gmbh | Alumino earth-alkali silicate glasses with high thermal capacity for light bulbs and use thereof |
DE10022769A1 (de) * | 2000-05-05 | 2001-11-08 | Telux Lampenrohr Gmbh | Thermisch hoch belastbare Alumoerdalkalisilikatgläser für Lampenkolben und Verwendung |
JP2002025762A (ja) | 2000-07-04 | 2002-01-25 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
JP2002053340A (ja) | 2000-08-09 | 2002-02-19 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
DE10064804C2 (de) * | 2000-12-22 | 2003-03-20 | Schott Glas | Alkalifreie Aluminoborosilicatgläser und ihre Verwendung |
JP2002193636A (ja) * | 2000-12-25 | 2002-07-10 | Nippon Sheet Glass Co Ltd | 無アルカリガラスとその製造方法をそれを用いて得られるフラットディスプレーパネル |
JP2002308643A (ja) * | 2001-02-01 | 2002-10-23 | Nippon Electric Glass Co Ltd | 無アルカリガラス及びディスプレイ用ガラス基板 |
DE10114581C2 (de) * | 2001-03-24 | 2003-03-27 | Schott Glas | Alkalifreies Aluminoborosilicatglas und Verwendungen |
JP3995902B2 (ja) | 2001-05-31 | 2007-10-24 | Hoya株式会社 | 情報記録媒体用ガラス基板及びそれを用いた磁気情報記録媒体 |
JP3532178B2 (ja) | 2001-10-22 | 2004-05-31 | Hoya株式会社 | 半導体パッケージ用窓材ガラス及びその製造方法 |
US6753279B2 (en) | 2001-10-30 | 2004-06-22 | Corning Incorporated | Glass composition for display panels |
JP2003261352A (ja) | 2002-03-08 | 2003-09-16 | Asahi Techno Glass Corp | ディスプレイ用ガラスおよびディスプレイ用ガラス部品 |
JP4265157B2 (ja) | 2002-07-01 | 2009-05-20 | 日本電気硝子株式会社 | フラットパネルディスプレイ装置用ガラス基板 |
US6992030B2 (en) | 2002-08-29 | 2006-01-31 | Corning Incorporated | Low-density glass for flat panel display substrates |
JP4320772B2 (ja) | 2003-02-13 | 2009-08-26 | 日本電気硝子株式会社 | フラットパネルディスプレイ装置用ガラス基板 |
KR20050109929A (ko) * | 2003-03-31 | 2005-11-22 | 아사히 가라스 가부시키가이샤 | 무알칼리 유리 |
CN1898168B (zh) * | 2003-12-26 | 2012-08-01 | 旭硝子株式会社 | 无碱玻璃、其制造方法及液晶显示板 |
JP5109225B2 (ja) * | 2003-12-26 | 2012-12-26 | 旭硝子株式会社 | 無アルカリガラスおよび液晶ディスプレイパネル |
JP4371841B2 (ja) | 2004-02-09 | 2009-11-25 | Hoya株式会社 | 半導体パッケージ用窓材ガラス |
DE102004033653B4 (de) | 2004-07-12 | 2013-09-19 | Schott Ag | Verwendung eines Glases für EEFL Fluoreszenzlampen |
DE202005004459U1 (de) * | 2004-07-12 | 2005-11-24 | Schott Ag | Glas für Leuchtmittel mit außenliegenden Elektroden |
CN101091251B (zh) | 2004-08-18 | 2011-03-16 | 康宁股份有限公司 | 包含高应变玻璃或玻璃陶瓷的绝缘体上半导体结构 |
JP2006188406A (ja) | 2005-01-07 | 2006-07-20 | Asahi Glass Co Ltd | 平板ディスプレイ用真空外囲器およびそれを用いた平板ディスプレイ |
JP4977965B2 (ja) * | 2005-05-02 | 2012-07-18 | 旭硝子株式会社 | 無アルカリガラスおよびその製造方法 |
KR100750990B1 (ko) | 2005-06-22 | 2007-08-22 | 주식회사 케이씨씨 | 기판용 고 변형점 유리 조성물 |
CN102603184B (zh) | 2005-06-28 | 2015-04-15 | 康宁股份有限公司 | 下拉法制造无碱玻璃板的方法 |
CN101213148B (zh) * | 2005-07-06 | 2012-04-11 | 旭硝子株式会社 | 无碱玻璃的制造方法以及无碱玻璃板 |
DE112006002184B4 (de) | 2005-08-15 | 2017-02-23 | Avanstrate Inc. | Glaszusammensetzung |
WO2007052489A1 (ja) | 2005-10-31 | 2007-05-10 | Ohara Inc. | 光学ガラス、光学ガラスの製造装置およびその製造方法 |
KR100985979B1 (ko) * | 2005-11-15 | 2010-10-06 | 아반스트레이트 가부시키가이샤 | 유리의 제조 방법 |
CN103172259B (zh) * | 2006-02-10 | 2015-10-21 | 康宁股份有限公司 | 具有高的热稳定性和化学稳定性的玻璃组合物及其制备方法 |
US8389852B2 (en) | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
JP5013304B2 (ja) | 2006-03-17 | 2012-08-29 | 日本電気硝子株式会社 | ディスプレイ用ガラス基板 |
US7235736B1 (en) | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
JP2007284307A (ja) | 2006-04-19 | 2007-11-01 | Central Glass Co Ltd | ディスプレイ装置用基板ガラス |
JP5703535B2 (ja) * | 2006-05-23 | 2015-04-22 | 日本電気硝子株式会社 | 無アルカリガラス基板 |
CN101454252A (zh) | 2006-05-25 | 2009-06-10 | 日本电气硝子株式会社 | 强化玻璃及其制造方法 |
CN101448753B (zh) * | 2006-05-25 | 2012-07-25 | 日本电气硝子株式会社 | 无碱玻璃及无碱玻璃基板 |
CN101484838B (zh) * | 2006-06-30 | 2011-11-02 | 旭硝子株式会社 | 液晶显示面板 |
WO2008007676A1 (fr) * | 2006-07-13 | 2008-01-17 | Asahi Glass Company, Limited | substrat de verre sans alcalin, son processus de fabrication et panneaux d'affichage à cristaux liquides |
CN101489944A (zh) * | 2006-07-13 | 2009-07-22 | 旭硝子株式会社 | 无碱玻璃基板及其制造方法以及液晶显示面板 |
DE102006042620B4 (de) | 2006-09-04 | 2012-01-26 | Schott Ag | Verwendung eines Aluminoborosilikatglases als Substratglas |
JP5071878B2 (ja) | 2006-09-12 | 2012-11-14 | 日本電気硝子株式会社 | 無アルカリガラスおよびこれを用いた無アルカリガラス基板 |
US20080128020A1 (en) | 2006-11-30 | 2008-06-05 | First Solar, Inc. | Photovoltaic devices including a metal stack |
US20080130171A1 (en) | 2006-11-30 | 2008-06-05 | Francis Martin Behan | Calcium aluminosilicate glasses for use as information recording medium substrates |
JP5808069B2 (ja) | 2007-02-16 | 2015-11-10 | 日本電気硝子株式会社 | 太陽電池用ガラス基板 |
JP5483821B2 (ja) | 2007-02-27 | 2014-05-07 | AvanStrate株式会社 | 表示装置用ガラス基板および表示装置 |
JP2008280189A (ja) | 2007-05-08 | 2008-11-20 | Nippon Electric Glass Co Ltd | 太陽電池用ガラス基板およびその製造方法 |
US7666511B2 (en) | 2007-05-18 | 2010-02-23 | Corning Incorporated | Down-drawable, chemically strengthened glass for cover plate |
CN101117270B (zh) | 2007-06-07 | 2016-03-02 | 河南安彩高科股份有限公司 | 高弹性模量的铝硼硅酸盐玻璃及其应用 |
JP5435394B2 (ja) * | 2007-06-08 | 2014-03-05 | 日本電気硝子株式会社 | 強化ガラス基板及びその製造方法 |
JP5234387B2 (ja) | 2007-06-12 | 2013-07-10 | 日本電気硝子株式会社 | 無アルカリガラスおよび無アルカリガラス基板並びにその製造方法 |
US20080308146A1 (en) | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
CN101074146B (zh) | 2007-06-16 | 2010-10-06 | 成都光明光电股份有限公司 | 吸收紫外光的低膨胀系数玻璃 |
KR101489983B1 (ko) * | 2007-10-25 | 2015-02-04 | 아사히 가라스 가부시키가이샤 | 무알칼리 유리의 제조 방법 |
CN101848873A (zh) | 2007-12-19 | 2010-09-29 | 日本电气硝子株式会社 | 玻璃基板 |
TW200940473A (en) | 2008-03-21 | 2009-10-01 | Lighting Glass Company Ltd L | Low-sodium-oxide glass and glass tube |
TWI414502B (zh) * | 2008-05-13 | 2013-11-11 | Corning Inc | 含稀土元素之玻璃材料及基板及含該基板之裝置 |
RU2010154445A (ru) * | 2008-05-30 | 2012-07-10 | Фостер Вилер Энергия Ой (Fi) | Способ и система для генерации энергии путем сжигания в чистом кислороде |
US8975199B2 (en) * | 2011-08-12 | 2015-03-10 | Corsam Technologies Llc | Fusion formable alkali-free intermediate thermal expansion coefficient glass |
US20120132282A1 (en) * | 2010-11-30 | 2012-05-31 | Bruce Gardiner Aitken | Alkali-free high strain point glass |
US8445394B2 (en) * | 2008-10-06 | 2013-05-21 | Corning Incorporated | Intermediate thermal expansion coefficient glass |
CN102448901B (zh) * | 2009-03-19 | 2015-11-25 | 日本电气硝子株式会社 | 无碱玻璃 |
DE102009050988B3 (de) * | 2009-05-12 | 2010-11-04 | Schott Ag | Dünnschichtsolarzelle |
DE102009050987B3 (de) | 2009-05-12 | 2010-10-07 | Schott Ag | Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle |
US8598056B2 (en) * | 2010-10-06 | 2013-12-03 | Corning Incorporated | Alkali-free glass compositions having high thermal and chemical stability |
CN103347830A (zh) * | 2011-01-25 | 2013-10-09 | 康宁股份有限公司 | 具有高热稳定性和化学稳定性的玻璃组合物 |
US9162919B2 (en) * | 2012-02-28 | 2015-10-20 | Corning Incorporated | High strain point aluminosilicate glasses |
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2012
- 2012-08-08 US US13/569,756 patent/US8975199B2/en active Active
- 2012-08-10 EP EP12750665.7A patent/EP2742010A2/en not_active Withdrawn
- 2012-08-10 WO PCT/US2012/050224 patent/WO2013025451A2/en active Application Filing
- 2012-08-10 KR KR1020147006510A patent/KR102018833B1/ko active IP Right Grant
- 2012-08-10 CN CN201280037518.1A patent/CN103732551B/zh active Active
- 2012-08-10 JP JP2014525158A patent/JP5826935B2/ja not_active Expired - Fee Related
- 2012-08-10 CN CN201611104118.4A patent/CN106746600A/zh active Pending
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- 2012-08-10 TW TW101129009A patent/TWI548606B/zh not_active IP Right Cessation
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TWI548606B (zh) | 2016-09-11 |
US20170217827A1 (en) | 2017-08-03 |
WO2013025451A3 (en) | 2013-09-06 |
JP2016052989A (ja) | 2016-04-14 |
EP2742010A2 (en) | 2014-06-18 |
CN106746600A (zh) | 2017-05-31 |
CN103732551A (zh) | 2014-04-16 |
CN103732551B (zh) | 2017-05-17 |
JP6371267B2 (ja) | 2018-08-08 |
JP2014528889A (ja) | 2014-10-30 |
TW201639799A (zh) | 2016-11-16 |
TW201311602A (zh) | 2013-03-16 |
US20130037105A1 (en) | 2013-02-14 |
WO2013025451A2 (en) | 2013-02-21 |
US9643883B2 (en) | 2017-05-09 |
KR102018833B1 (ko) | 2019-09-05 |
KR20140064860A (ko) | 2014-05-28 |
JP5826935B2 (ja) | 2015-12-02 |
US8975199B2 (en) | 2015-03-10 |
US20150158758A1 (en) | 2015-06-11 |
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