US20170217827A1 - Fusion Formable Alkali-Free Intermediate Thermal Expansion Coefficient Glass - Google Patents

Fusion Formable Alkali-Free Intermediate Thermal Expansion Coefficient Glass Download PDF

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US20170217827A1
US20170217827A1 US15/485,376 US201715485376A US2017217827A1 US 20170217827 A1 US20170217827 A1 US 20170217827A1 US 201715485376 A US201715485376 A US 201715485376A US 2017217827 A1 US2017217827 A1 US 2017217827A1
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glass
percent
cao
sro
bao
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US15/485,376
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Bruce Gardiner Aitken
James Edward Dickinson, Jr.
Timothy James Kiczenski
John Christopher Mauro
Adama Tandia
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CORSAM TECHNOLOGIES LLC
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CORSAM TECHNOLOGIES LLC
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Assigned to CORSAM TECHNOLOGIES LLC reassignment CORSAM TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AITKEN, BRUCE GARDINER, KICZENSKI, TIMOTHY JAMES, DICKINSON, JAMES EDWARD, JR, TANDIA, Adama, MAURO, JOHN CHRISTOPHER
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3447—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a halide
    • C03C17/3452—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a halide comprising a fluoride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
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  • Organic Chemistry (AREA)
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  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points ≧600° C., thermal expansion coefficient of from 35 to 50×10−7/° C.

Description

  • This application is a continuation application of U.S. patent application Ser. No. 14/615,916 filed on Feb. 6, 2015 which is a continuation of U.S. patent application Ser. No. 13/569,756 filed on Aug. 8, 2012 which claims the benefit of priority under 35 U.S.C. §119 of U.S. Provisional Application Ser. No. 61/522,956 filed on Aug. 12, 2011 the entire disclosure of each is relied upon and incorporated herein by reference in their entirety.
    • BACKGROUND
  • Field
  • Embodiments relate generally to alkali-free glasses and more particularly to alkali-free, high strain point and/or intermediate expansion coefficient, fusion formable aluminosilicate, and/or boroaluminosilicate glasses which may be useful in photovoltaic applications, for example, thin film photovoltaic devices.
  • Technical Background
  • Substrate glasses for copper indium gallium diselenide (CIGS) photovoltaic modules typically contain Na2O, as diffusion of Na from the glass into the CIGS layer has been shown to result in significant improvement in module efficiency. However, due to the difficulty in controlling the amount of diffusing Na during the CIGS deposition/crystallization process, some manufacturers of these devices prefer to deposit a layer of a suitable Na compound, e.g. NaF, prior to CIGS deposition, in which case any alkali present in the substrate glass needs to be contained through the use of a barrier layer. Moreover, in the case of cadmium telluride (CdTe) photovoltaic modules, any Na contamination of the CdTe layer is deleterious to module efficiency and, therefore, typical Na-containing substrate glasses, e.g. soda-lime glass, require the presence of a barrier layer. Consequently, use of an alkali-free substrate glass for either CIGS, silicon, wafered crystalline silicon, or CdTe modules can obviate the need for a barrier layer.
    • SUMMARY
  • The intermediate thermal expansion coefficient and/or the alkali-free glasses disclosed herein are especially compatible with CdTe photovoltaic devices and may increase the efficiency of the cell.
  • One embodiment is a glass comprising, in mole percent:
      • 55 to 75 percent SiO2;
      • 5 to 20 percent Al2O3;
      • 0 to 15 percent B2O3;
      • 0 to 10 percent MgO;
      • 0 to 15 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
        wherein MgO+CaO+BaO+SrO is 13 to 20 percent, wherein the glass is substantially free of alkali metal, and wherein the glass has a liquidus viscosity of 100,000 poise or greater.
  • These glasses are advantageous materials to be used in copper indium gallium diselenide (CIGS) photovoltaic modules where the sodium required to optimize cell efficiency is not to be derived from the substrate glass but instead from a separate deposited layer consisting of a sodium containing material such as NaF. Current CIGS module substrates are typically made from soda-lime glass sheet that has been manufactured by the float process. However, use of higher strain point glass substrates can enable higher temperature CIGS processing, which is expected to translate into desirable improvements in cell efficiency.
  • Accordingly, the alkali-free glasses described herein can be characterized by strain points ≧600° C. and thermal expansion coefficients in the range of from 35 to 50×10−7/° C., in order to minimize thermal expansion mismatch between the substrate and CIGS layer or to better match the thermal expansion of CdTe.
  • Finally, the preferred compositions of this disclosure have strain point well in excess of 650° C., thereby enabling CIGS or CdTe deposition/crystallization to be carried out at the highest possible processing temperature, resulting in additional efficiency gain.
  • Additional features and advantages will be set forth in the detailed description which follows, and in part will be readily apparent to those skilled in the art from the description or recognized by practicing the invention as described in the written description and claims hereof.
  • It is to be understood that both the foregoing general description and the following detailed description are merely exemplary of the invention, and are intended to provide an overview or framework for understanding the nature and character of the invention as it is claimed.
  • The accompanying drawing is included to provide a further understanding of the invention, and is incorporated in and constitutes a part of this specification. The drawing illustrates one or more embodiment(s) of the invention and together with the description serve to explain the principles and operation of the invention.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention can be understood from the following detailed description either alone or together with the accompanying drawing figure.
  • FIG. 1 is a schematic of features of a photovoltaic device according to some embodiments.
    •  DETAILED DESCRIPTION
  • Reference will now be made in detail to various embodiments of the invention.
  • As used herein, the term “substrate” can be used to describe either a substrate or a superstrate depending on the configuration of the photovoltaic cell. For example, the substrate is a superstrate, if when assembled into a photovoltaic cell, it is on the light incident side of a photovoltaic cell. The superstrate can provide protection for the photovoltaic materials from impact and environmental degradation while allowing transmission of the appropriate wavelengths of the solar spectrum. Further, multiple photovoltaic cells can be arranged into a photovoltaic module. Photovoltaic device can describe either a cell, a module, or both.
  • As used herein, the term “adjacent” can be defined as being in close proximity. Adjacent structures may or may not be in physical contact with each other. Adjacent structures can have other layers and/or structures disposed between them.
  • Moreover, where a range of numerical values is recited herein, comprising upper and lower values, unless otherwise stated in specific circumstances, the range is intended to include the endpoints thereof, and all integers and fractions within the range. It is not intended that the scope of the invention be limited to the specific values recited when defining a range. Further, when an amount, concentration, or other value or parameter is given as a range, one or more preferred ranges or a list of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether such pairs are separately disclosed. Finally, when the term “about” is used in describing a value or an end-point of a range, the disclosure should be understood to include the specific value or end-point referred to.
  • As used herein, the term “about” means that amounts, sizes, formulations, parameters, and other quantities and characteristics are not and need not be exact, but may be approximate and/or larger or smaller, as desired, reflecting tolerances, conversion factors, rounding off, measurement error and the like, and other factors known to those of skill in the art. In general, an amount, size, formulation, parameter or other quantity or characteristic is “about” or “approximate” whether or not expressly stated to be such.
  • The term “or”, as used herein, is inclusive; more specifically, the phrase “A or B” means “A, B, or both A and B”. Exclusive “or” is designated herein by terms such as “either A or B” and “one of A or B”, for example.
  • The indefinite articles “a” and “an” are employed to describe elements and components of the invention. The use of these articles means that one or at least one of these elements or components is present. Although these articles are conventionally employed to signify that the modified noun is a singular noun, as used herein the articles “a” and “an” also include the plural, unless otherwise stated in specific instances. Similarly, the definite article “the”, as used herein, also signifies that the modified noun may be singular or plural, again unless otherwise stated in specific instances.
  • It is noted that one or more of the claims may utilize the term “wherein” as a transitional phrase. For the purposes of defining the present invention, it is noted that this term is introduced in the claims as an open-ended transitional phrase that is used to introduce a recitation of a series of characteristics of the structure and should be interpreted in like manner as the more commonly used open-ended preamble term “comprising.”
  • As used herein, a glass composition having 0 wt % of a compound is defined as meaning that the compound, molecule, or element was not purposefully added to the composition, but the composition may still comprise the compound, typically in tramp or trace amounts. Similarly, “substantially free of alkali metal”, “substantially free of sodium”, “substantially free of potassium”, “sodium-free,” “alkali-free,” “potassium-free” or the like are defined to mean that the compound, molecule, or element was not purposefully added to the composition, but the composition may still comprise sodium, alkali, or potassium, but in approximately tramp or trace amounts. These tramp amounts are not intentionally included in the batch but may be present in minor amounts as impurities in the raw materials used to provide the major components of the glass.
  • One embodiment is a glass comprising, in mole percent:
      • 55 to 75 percent SiO2;
      • 5 to 20 percent Al2O3;
      • 0 to 15 percent B2O3;
      • 0 to 10 percent MgO;
      • 0 to 15 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
        wherein MgO+CaO+BaO+SrO is 13 to 20 percent, wherein the glass is substantially free of alkali metal, and wherein the glass has a liquidus viscosity of 100,000 poise or greater.
  • In one embodiment, the glass, comprises, in mole percent:
      • 55 to 75 percent SiO2;
      • 5 to 13 percent Al2O3;
      • 0 to 15 percent B2O3;
      • 0 to 10 percent MgO;
      • 0 to 15 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
  • In one embodiment, the glass, comprises, in mole percent:
      • 55 to 75 percent SiO2;
      • 0 to 20 percent Al2O3;
      • 6 to 12 percent B2O3;
      • 0 to 10 percent MgO;
      • 0 to 15 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
  • In one embodiment, the glass, comprises, in mole percent:
      • 55 to 75 percent SiO2;
      • 5 to 13 percent Al2O3;
      • 6 to 12 percent B2O3;
      • 0 to 10 percent MgO;
      • 0 to 15 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
  • In one embodiment, the glass, comprises, in mole percent:
      • 55 to 75 percent SiO2;
      • 8 to 13 percent Al2O3;
      • 6 to 12 percent B2O3;
      • 0 to 7 percent MgO;
      • 0 to 12 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
  • In one embodiment, the glass, comprises, in mole percent:
      • 58 to 69 percent SiO2;
      • 8 to 13 percent Al2O3;
      • 6 to 12 percent B2O3;
      • 0 to 7 percent MgO;
      • 0 to 12 percent SrO;
      • 0 to 16 percent CaO; and
      • 0 to 9 percent BaO.
  • In one embodiment, the glass, comprises, in mole percent:
      • 73 to 75 percent SiO2;
      • 6 to 9 percent Al2O3;
      • 0 percent B2O3;
      • 1 to 3 percent MgO;
      • 0 percent SrO;
      • 13 to 16 percent CaO; and
      • 1 to 3 percent BaO.
  • In one embodiment, the glass, comprises, in mole percent:
      • 60 to 67 percent SiO2;
      • 8 to 12 percent Al2O3;
      • 6 to 12 percent B2O3;
      • 0.05 to 7 percent MgO;
      • 0 to 12 percent SrO;
      • 0.5 to 9 percent CaO; and
      • 0.5 to 8 percent BaO.
  • The glass is substantially free of alkali metal, for example, the content of alkali can be 0.05 mole percent or less, for example, zero mole percent. The glass, according to some embodiments, is free of intentionally added alkali metal.
  • The glass is substantially free of sodium, for example, the content of sodium can be 0.05 mole percent or less, for example, zero mole percent. The glass, according to some embodiments, is free of intentionally added sodium.
  • The glass is substantially free of potassium, for example, the content of sodium can be 0.05 mole percent or less, for example, zero mole percent. The glass, according to some embodiments, is free of intentionally added potassium.
  • The glass is substantially free of sodium and potassium, for example, the content of sodium can be 0.05 mole percent or less, for example, zero mole percent. The glass, according to some embodiments, is free of intentionally added sodium and potassium.
  • In some embodiments, the glass comprises 55 to 75 percent SiO2, for example, 58 to 69 percent SiO2, or, for example, 60 to 67 percent SiO2, or, for example, 73 to 75 percent SiO2.
  • As mentioned above, the glasses, according some embodiments, comprise 0 to 15 percent B2O3, for example, 6 to 12 percent. B2O3 is added to the glass to reduce melting temperature, to decrease liquidus temperature, to increase liquidus viscosity, and to improve mechanical durability relative to a glass containing no B2O3.
  • The glass, according to some embodiments, comprises MgO+CaO+BaO+SrO in an amount from 13 to 20 mole percent. MgO can be added to the glass to reduce melting temperature and to increase strain point. It can disadvantageously lower CTE relative to other alkaline earths (e.g., CaO, SrO, BaO), and so other adjustments may be made to keep the CTE within the desired range. Examples of suitable adjustments include increase SrO at the expense of CaO.
  • The glasses can comprise, in some embodiments, 0 to 15 mole percent SrO, for example, greater than zero to 15 mole percent, for example, 1 to 12 mole percent SrO. In certain embodiments, the glass contains no deliberately batched SrO, though it may of course be present as a contaminant in other batch materials. SrO contributes to higher coefficient of thermal expansion, and the relative proportion of SrO and CaO can be manipulated to improve liquidus temperature, and thus liquidus viscosity. SrO is not as effective as CaO or MgO for improving strain point, and replacing either of these with SrO tends to cause the melting temperature to increase. BaO has a similar effect coefficient of thermal expansion as SrO, if not a greater effect. BaO tends to lower melting temperature and lower liquidus temperature
  • The glasses, in some embodiments, comprise 0 to 16 mole percent CaO, for example, greater than 0 to 15 or, for example, 0 to 12 mole percent CaO, for example, 0.5 to 9 mole percent CaO. CaO contributes to higher strain point, lower density, and lower melting temperature.
  • The glass, according to one embodiment, further comprises 0 to 0.5 mole percent of a fining agent. The fining agent can be SnO2.
  • The glass, according to one embodiment, further comprising 0 to 2 mole percent of TiO2, MnO, ZnO, Nb2O5, Ta2O5, ZrO2, La2O3, Y2O3, P2O5, or a combination thereof. These optional components can be used to further tailor glass properties.
  • In some embodiments, the glass is substantially free of Sb2O3, As2O3, or combinations thereof, for example, the glass comprises 0.05 mole percent or less of Sb2O3 or As2O3 or a combination thereof. For example, the glass can comprise zero mole percent of Sb2O3 or As2O3 or a combination thereof.
  • Accordingly, in one embodiment, the glass has a strain point of 600° C. or greater, for example, 610° C. or greater, for example, 620° C. or greater, for example, 630° C. or greater, for example, 640° C. or greater, for example, 650° C. or greater. In some embodiments, the glass has a coefficient of thermal expansion of from 35×10−7/° C. to 50×10−7/° C., for example, 39×10−7/° C. to 50×10−7/° C. In one embodiment, the glass has a coefficient of thermal expansion of from 35×10−7/° C. to 50×10−7/° C. and a strain point of 600° C. or greater.
  • The glass can be fusion formed as known in the art of fusion forming glass. The fusion draw process uses an isopipe that has a channel for accepting molten glass raw material. The channel has weirs that are open at the top along the length of the channel on both sides of the channel. When the channel fills with molten material, the molten glass overflows the weirs. Due to gravity, the molten glass flows down the outside surfaces of the isopipe. These outside surfaces extend down and inwardly so that they join at an edge below the drawing tank. The two flowing glass surfaces join at this edge to fuse and form a single flowing sheet. The fusion draw method offers the advantage that, since the two glass films flowing over the channel fuse together, neither outside surface of the resulting glass sheet comes in contact with any part of the apparatus. Thus, the surface properties are not affected by such contact.
  • Glasses having a liquidus viscosity of greater than or equal to 100 kP, 100,000 poise, are usually fusion formable. Glass having a liquidus viscosity in the range of from 10 kP to less than 100 kP are usually float formable but not fusion formable. Some embodiments are alkali-free glasses with Tstr>630° C., α in the range of 4-5 ppm/° C., as well as liquidus viscosity (ηliq) in excess of 100,000 poise. As such, they are ideally suited for being formed into sheet by the fusion process. Moreover, many of these glasses also have a 200 poise temperature (T200) that is well below 1550° C., making them ideal candidates for lower-cost versions of the fusion process.
  • In one embodiment, the glass is in the form of a sheet. The glass in the form of a sheet can be strengthened, for example, thermally tempered.
  • The glass, according to one embodiment, is optically transparent.
  • In one embodiment, as shown in FIG. 1, a photovoltaic device 100 comprises the glass in the form of a sheet 10. The photovoltaic device can comprise more than one of the glass sheets, for example, as a substrate and/or as a superstrate. In one embodiment, the photovoltaic device 100 comprises the glass sheet as a substrate or superstrate 10 or 18, a conductive material 12 adjacent to the substrate, and an active photovoltaic medium 16 adjacent to the conductive material. In one embodiment, the device comprises two glass sheets, one as the superstrate and one as the substrate, having the compositions described herein. The functional layer can comprise copper indium gallium diselenide, amorphous silicon, crystalline silicon, one or more crystalline silicon wafers, cadmium telluride, or combinations thereof adjacent to the substrate or superstrate. In one embodiment, the active photovoltaic medium comprises a CIGS layer. In one embodiment, the active photovoltaic medium comprises a cadmium telluride (CdTe) layer. In one embodiment, the photovoltaic device comprises a functional layer comprising copper indium gallium diselenide or cadmium telluride. In one embodiment, the photovoltaic device the functional layer is copper indium gallium diselenide. In one embodiment, the functional layer is cadmium telluride.
  • The photovoltaic device 100, according to one embodiment, further comprises one or more intermediate layer(s) 14 such as a sodium containing layer, for example, a layer comprising NaF or a barrier layer disposed between or adjacent to the superstrate or substrate and the functional layer. In one embodiment, the photovoltaic device further comprises a barrier layer disposed between or adjacent to the superstrate or substrate and a transparent conductive oxide (TCO) layer, wherein the TCO layer is disposed between or adjacent to the functional layer and the barrier layer. A TCO may be present in a photovoltaic device comprising a CdTe functional layer. In one embodiment, the barrier layer is disposed directly on the glass. In one embodiment, the device comprises multiple intermediate layers such as a sodium containing layer, for example, a layer comprising NaF, and an adjacent sodium metering layer located between the superstrate and the substrate.
  • In one embodiment, the glass sheet is optically transparent. In one embodiment, the glass sheet as the substrate and/or superstrate is optically transparent.
  • According to some embodiments, the glass sheet has a thickness of 4.0 mm or less, for example, 3.5 mm or less, for example, 3.2 mm or less, for example, 3.0 mm or less, for example, 2.5 mm or less, for example, 2.0 mm or less, for example, 1.9 mm or less, for example, 1.8 mm or less, for example, 1.5 mm or less, for example, 1.1 mm or less, for example, 0.5 mm to 2.0 mm, for example, 0.5 mm to 1.1 mm, for example, 0.7 mm to 1.1 mm. Although these are exemplary thicknesses, the glass sheet can have a thickness of any numerical value including decimal places in the range of from 0.1 mm up to and including 4.0 mm.
  • Alkali-free glasses are becoming increasingly attractive candidates for the superstrate, substrate of CdTe, CIGS modules, respectively. In the former case, alkali contamination of the CdTe and conductive oxide layers of the film stack is avoided. Moreover, process simplification arises from the elimination of the barrier layer (needed, e.g., in the case of conventional soda-lime glass). In the latter case, CIGS module manufacturers are better able to control the amount of Na needed to optimize absorber performance by depositing a separate Na-containing layer that, by virtue of its specified composition and thickness, results in more reproducible Na delivery to the CIGS layer.
    • EXAMPLES
  • Table 1, Table 2, Table 3, Table 4, Table 5, Table 6, and Table 7 show exemplary glasses, according to embodiments of the invention. Properties data for some exemplary glasses are also shown in Table 1, Table 2, Table 3, Table 4, Table 5, Table 6, and Table 7. In the Tables Tstr(° C.) is the strain point which is the temperature when the viscosity is equal to 1014.7 P as measured by beam bending or fiber elongation. α(10−7/° C.) in the Tables is the coefficient of thermal expansion (CTE) which is the amount of dimensional change from either 0 to 300° C. or 25 to 300° C. depending on the measurement. CTE is typically measured by dilatometry. ρ(g/cc) is the density which is measured with the Archimedes method (ASTM C693). T200(° C.) is the two-hundred Poise (P) temperature. This is the temperature when the viscosity of the melt is 200 P as measured by HTV (high temperature viscosity) measurement which uses concentric cylinder viscometry. Tliq(° C.) is the liquidus temperature. This is the temperature where the first crystal is observed in a standard gradient boat liquidus measurement (ASTM C829-81). ηliq is the liquidus viscosity expressed in kilopoise; thus 100 kP=100,000 P. This is the viscosity of the melt corresponding to the liquidus temperature.
  • TABLE 1
    Example
    Mole % 1 2 3 4 5 6 7 8 9 10
    MgO 6.4 6.9 6.9 4.6 4.8 6.4 4.4 4.4 2.7 2.6
    CaO 8.5 6.9 9.1 5.4 5.6 5.2 7.2 5.2 2.9 2.0
    SrO 0 0 0 3.6 3.8 3.5 3.5 5.5 11.8 9.6
    BaO 2.4 3.4 2.6 2.4 2.5 2.3 2.3 2.3 0.7 3.6
    RO 17.2 17.2 18.6 16.0 16.7 17.4 17.4 17.4 18.0 17.7
    B2O3 10.0 10.0 10.8 10.7 11.2 10.3 10.3 10.3 9.0 7.5
    Al2O3 11.1 11.1 12.0 11.1 11.6 10.7 10.7 10.7 9.6 9.3
    SiO2 61.5 61.5 58.5 62.0 60.5 61.5 61.5 61.5 63.3 65.4
    SnO2 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
    Tstr 645 642 641 643 641 642 641 642 645 649
    α 41.8 40.6 41.5 40.7 41.2 40.0 41.0 41.9 46.2 46.5
    ρ 2.53 2.56 2.56 2.57 2.59 2.58 2.58 2.62 2.70 2.75
    T200 1473 1490 1515
    Tliq 1060 1065 1050 1015 1020 1070 1040 1035 1130 1110
    ηliq 205 777 459
    (kP)
  • TABLE 2
    Example
    Mole % 11 12 13 14 15 16 17 18 19 20
    MgO 4.1 5.4 1.8 0 2.0 4.4 6.4 5.4 5.4 6.4
    CaO 9.9 6.4 11.0 10.0 9.0 8.5 6.5 7.5 7.5 7.5
    SrO 3.3 4.3 2.9 9.0 8.0 2.0 2.0 1.0 1.0 0
    BaO 2.2 2.8 3.3 0 0 2.4 2.4 3.4 3.4 3.4
    RO 19.4 19.0 19.0 19.0 19.0 17.3 17.3 17.3 17.3 17.3
    B2O3 9.7 10.7 10.7 8.0 8.0 10.0 10.0 10.0 9.0 9.0
    Al2O3 10.0 11.1 8.5 9.0 9.0 11.1 11.1 11.1 12.1 12.1
    SiO2 60.8 59.0 62.3 64.0 64.0 61.5 61.5 61.5 61.5 61.5
    SnO2 0.10 0.10 0.07 0.10 0.10 0.10 0.10 0.10 0.10 0.10
    Tstr 639 636 631 648 649 650 645 650 659 661
    α 46.5 43.9 46.0 48.4 45.8 40.4 41.4 39.5 40.3 39.8
    ρ 2.70 2.64 2.67 2.63 2.57 2.60 2.56 2.60 2.58
    T200 1423
    Tliq 1045 1030 1075 1150 1145 1080 1080 1095 1080 1090
    ηliq 192
    (kP)
  • TABLE 3
    Example
    Mole % 21 22 23 24 25 26 27 28 29 30
    MgO 0.1 2.0 0 0 1.98 1.97 0.07 0.07 0.06 0.06
    CaO 4.3 2.0 4.3 3.3 1.3 0.8 4.6 4.6 4.5 4.6
    SrO 9.7 12.0 10.0 10.5 11.9 11.5 9.7 9.6 10.2 9.5
    BaO 0.1 0.1 0.1 0.1 2.0 4.0 0.1 0.1 0.1 0.1
    RO 14.1 16.1 14.4 13.9 17.2 18.3 14.4 14.4 14.8 14.2
    B2O3 8.4 6.6 8.5 8.5 6.4 6.4 9.9 11.4 9.9 11.5
    Al2O3 9.3 9.3 10.0 10.5 8.7 8.6 9.3 9.3 10.0 10.0
    SiO2 68.1 67.8 67.0 67.0 67.6 66.5 66.2 64.8 65.2 64.1
    SnO2 0.16 0.18 0.18 0.18 0.17 0.17 0.17 0.17 0.17 0.17
    Tstr 668 674 668 673 667 665 658 649 659 656
    α 40.9 42.8 41.7 41.8 45.9 46.6 42.1 42.5 42.3 42.4
    ρ 2.59 2.65 2.59 2.59 2.72 2.77 2.58 2.58 2.59 2.59
    T200 1595 1595 1594 1610 1563 1545 1569 1540 1555 1528
    Tliq 1125 1125 1135 1150 1100 1075 1075 1070 1080 1080
    ηliq 142 162 119 121 124 235 274 202 253 163
    (kP)
  • TABLE 4
    Example
    Mole % 31 32 33 34 35 36 37 38
    MgO 4.7 2.5 3.5 4.5 3.8 3.9 4.2 4.4
    CaO 5.6 7.0 5.5 4.5 6.0 5.7 5.6 5.5
    SrO 3.7 1.5 2.0 2.0 2.2 2.5 2.9 3.3
    BaO 2.5 7.0 7.0 7.0 7.6 6.2 4.9 3.7
    RO 16.5 18.0 18.0 18.0 19.5 18.3 17.6 16.8
    B2O3 11.0 9.0 9.0 9.0 9.8 9.8 10.1 10.4
    Al2O3 11.4 9.0 9.0 9.0 9.8 9.9 10.3 10.8
    SiO2 61.0 63.9 63.9 63.9 60.9 62.0 62.0 62.0
    SnO2 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10
    Tstr 640 632 632 635 630 631 633 638
    α 41.2 46.5 45.9 45.8 48.2 46.0 43.7 41.7
    ρ 2.58 2.73 2.72 2.72 2.77 2.71 2.67 2.62
    T200 1510 1490 1490 1494 1443 1475 1490
    Tliq 1000 1050 1025 1020 1045 1000 1010
    ηliq (kP) 893 166 364 437 106 756 808
  • TABLE 5
    Example
    Mole % 39 40 41 42 43 44 45 46 47 48
    MgO 1.4 1.3 1.8 0.0 2.0 4.4 6.4 5.4 5.4 6.4
    CaO 15.4 14.2 11.0 10.0 9.0 8.5 6.5 7.5 7.5 7.5
    SrO 2.9 9.0 8.0 2.0 2.0 1.0 1.0 0
    BaO 1.4 1.3 3.3 0 0 2.4 2.4 3.4 3.4 3.4
    RO 18.1 16.7 19.0 19.0 19.0 17.3 17.3 17.3 17.3 17.3
    B2O3 10.7 8.0 8.0 10.0 10.0 10.0 9.0 9.0
    Al2O3 7.0 8.4 8.5 9.0 9.0 11.1 11.1 11.1 12.1 12.1
    SiO2 74.9 74.9 62.3 64.0 64.0 61.5 61.5 61.5 61.5 61.5
    SnO2 0.10 0.10 0.07 0.10 0.10 0.10 0.10 0.10 0.10 0.10
    Tstr 735 745 613 648 649 650 645 650 659 661
    α 42.7 40.6 46 48.4 45.8 40.4 41.4 39.5 40.3 39.8
    ρ 2.67 2.67 2.63 2.57 2.60 2.56 2.60 2.58
    T200
    Tliq 1080 1080 1075 1150 1145 1080 1080 1095 1080 1090
    ηliq
    (kP)
  • TABLE 6
    Example
    Mole % 49 50 51 52 53 54 55 56 57
    MgO 0.1 2.0 0.0 0.0 2.0 2.0 0.1 0.1 0.1
    CaO 4.3 2.0 4.3 3.3 1.3 0.8 4.6 4.6 4.5
    SrO 9.7 12.0 10.0 10.5 11.9 11.5 9.7 9.6 10.2
    BaO 0.1 0.1 0.1 0.1 2.0 4.0 0.1 0.1 0.1
    RO 14.1 16.1 14.4 13.9 17.2 18.3 14.4 14.4 14.8
    B2O3 8.4 6.6 8.5 8.5 6.4 6.4 9.9 11.4 9.9
    Al2O3 9.3 9.3 10.0 10.5 8.6 8.6 9.3 9.3 9.9
    SiO2 68.1 67.8 67.0 66.9 67.6 66.5 66.2 64.8 65.2
    SnO2 0.16 0.18 0.18 0.18 0.17 0.17 0.17 0.17 0.17
    Tstr 668 674 668 673 667 665 658 649 659
    α 40.9 42.8 41.7 41.8 45.9 46.6 42.1 42.5 42.3
    ρ 2.59 2.65 2.59 2.59 2.72 2.77 2.58 2.58 2.59
    T200 1595 1595 1594 1610 1563 1545 1569 1540 1555
    Tliq 1125 1125 1135 1150 1100 1075 1075 1070 1080
    ηliq (kP) 142 162 119 121 124 235 274 202 253
  • TABLE 7
    Example
    Mole % 58 59 60 61 62
    MgO 0.1 0.1 1.6 0.1 0.1
    CaO 4.6 5.0 4.9 6.5 8.0
    SrO 9.5 9.8 8.4 8.5 6.9
    BaO 0.1 0.1 0.1 0.1 0.1
    RO 14.2 15.0 15.0 15.1 15.1
    B2O3 11.5 10.4 10.3 10.3 10.4
    Al2O3 10.0 9.7 9.6 9.6 9.6
    SiO2 64.1 64.9 65.0 64.8 64.8
    SnO2 0.17 0.16 0.16 0.16 0.16
    Tstr 656 655 653 657 656
    α 42.4 42 41.8 42 42.5
    ρ 2.59 2.60 2.56 2.57 2.55
    T200 1528 1539 1546 1539 1536
    Tliq 1080 1090 1100 1100 1080
    ηliq (kP) 163 132 136 106 178
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims (18)

What is claimed is:
1. A glass comprising, in mole percent:
58-64%  SiO2; 8-13% Al2O3; 6-12% B2O3; 0-7%  MgO; 0-12% SrO; 0-16% CaO; and 2-9%  BaO,
wherein the glass is substantially free of alkali metal, and the glass is characterized by a liquidus temperature of 1150° C. or lower.
2. The glass according to claim 1, comprising 2-11% CaO.
3. The glass according to claim 1, comprising 2-7.6% BaO.
4. The glass according to claim 1, wherein the glass has a liquidus viscosity of 100,000 poise or greater.
5. The glass according to claim 1, wherein MgO+CaO+BaO+SrO is 13 to 20 percent.
6. The glass according to claim 1, having a coefficient of thermal expansion in the range of from about 35×110−7/° C. to about 50×10−7/° C.
7. The glass according to claim 1, comprising 0 to about 2 mole percent of TiO2, MnO, ZnO, Nb2O5, Ta2O5, ZrO2, La2O3, Y2O3, P2O5, or a combination thereof.
8. The glass according to claim 1, comprising 63.9 mole % SiO2.
9. The glass according to claim 1, wherein the glass has 0.05 mole % or less alkali.
10. The glass according to claim 1, wherein the glass has a strain point of ≧600° C.
11. The glass according to claim 1, wherein the glass is in the form of a sheet.
12. The glass according to claim 11, wherein the sheet is fusion formed.
13. The glass according to claim 11, wherein the sheet is used in a photovoltaic device.
14. The glass according to claim 1, comprising, in mole percent:
63.9% SiO2; 9.0% Al2O3; 9.0% B2O3; 3.5% MgO; 2.0% SrO; 5.5% CaO; and 7.0% BaO.
15. The glass according to claim 1, comprising, in mole percent:
63.9% SiO2; 9.0% Al2O3; 9.0% B2O3; 4.5% MgO; 2.0% SrO; 4.5% CaO; and 7.0% BaO.
16. A photovoltaic device comprising the glass according to claim 1.
17. The photovoltaic device according to claim 16, further comprising a substrate.
18. The photovoltaic device according to claim 17, further comprising one or more intermediate layers disposed between said glass sheet and said substrate.
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US7829490B2 (en) * 2006-12-14 2010-11-09 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
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CN104326662B (en) * 2013-12-31 2017-07-04 东旭集团有限公司 A kind of alkali-free alumina silicate glass of not boracic
JP6323139B2 (en) * 2014-04-17 2018-05-16 旭硝子株式会社 Glass for pharmaceutical or cosmetic containers
WO2016024962A1 (en) * 2014-08-13 2016-02-18 Corning Incorporated Intermediate cte glasses and glass articles comprising the same
US20160200618A1 (en) * 2015-01-08 2016-07-14 Corning Incorporated Method and apparatus for adding thermal energy to a glass melt
CN105601105B (en) * 2015-12-30 2018-09-07 芜湖东旭光电装备技术有限公司 A kind of glass composition, low brittleness alkali-free glass and its preparation method and application
TWI774655B (en) * 2016-02-22 2022-08-21 美商康寧公司 Alkali-free boroalumino silicate glasses
WO2017204167A1 (en) * 2016-05-25 2017-11-30 旭硝子株式会社 Alkali-free glass substrate, laminated substrate, and method for manufacturing glass substrate
CN107382052B (en) * 2017-08-25 2020-02-07 郑州大学 Alkali-free silicate glass and preparation method and application thereof
US10480440B2 (en) * 2017-11-13 2019-11-19 GM Global Technology Operations LLC Particulate matter sensor heat cover
EP3810558B1 (en) 2018-06-19 2023-04-26 Corning Incorporated High strain point and high young's modulus glasses
CN109485254A (en) * 2018-11-15 2019-03-19 东旭科技集团有限公司 Alkali-free alumina silicate glass composition, alkali-free alumina silicate glass and its preparation method and application
CN111302619B (en) * 2020-04-17 2022-01-14 中南大学 Alkali-free aluminoborosilicate glass and preparation method thereof
CN114361279B (en) * 2022-01-11 2024-01-05 奎达高分子材料科技(宜兴)有限公司 PVB double-glass photovoltaic module structure and press mounting process
WO2023244750A1 (en) * 2022-06-15 2023-12-21 Corning Incorporated Solar devices with borosilicate glass and methods of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019207B2 (en) * 2000-03-30 2006-03-28 Hahn-Meitner-Institut Berlin Gmbh. Method for producing a solar module with thin-film solar cells which are series-connected in an integrated manner and solar modules produced according to the method, especially using concentrator modules
WO2007138832A1 (en) * 2006-05-25 2007-12-06 Nippon Electric Glass Co., Ltd. Nonalkaline glass and nonalkaline glass substrates

Family Cites Families (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012263A (en) * 1975-02-10 1977-03-15 Owens-Illinois, Inc. Alkali-free glasses
US4536607A (en) 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
JPS6374935A (en) * 1986-09-17 1988-04-05 Nippon Electric Glass Co Ltd Glass composition for substrate, having improved chemical resistance
JPS6461329A (en) * 1987-08-31 1989-03-08 Central Glass Co Ltd Alkali-free glass
US4824808A (en) * 1987-11-09 1989-04-25 Corning Glass Works Substrate glass for liquid crystal displays
JPH0624998B2 (en) * 1988-11-11 1994-04-06 セントラル硝子株式会社 Alkali free glass
US4980318A (en) 1989-05-10 1990-12-25 Corning Incorporated High refractive index photochromic glasses
JP2743333B2 (en) 1989-10-31 1998-04-22 日本電気硝子株式会社 Glass for substrates
JP2871163B2 (en) * 1991-04-26 1999-03-17 日本板硝子株式会社 Alkali-free glass
JP3083586B2 (en) * 1991-04-26 2000-09-04 旭硝子株式会社 Alkali-free glass
JP3144823B2 (en) * 1991-04-26 2001-03-12 旭硝子株式会社 Alkali-free glass
US5116787A (en) * 1991-08-12 1992-05-26 Corning Incorporated High alumina, alkaline earth borosilicate glasses for flat panel displays
US5116788A (en) * 1991-08-12 1992-05-26 Corning Incorporated Alkaline earth aluminoborosilicate glasses for flat panel displays
US5326730A (en) * 1993-01-22 1994-07-05 Corning Incorporated Barium aluminosilicate glasses
US5374595A (en) 1993-01-22 1994-12-20 Corning Incorporated High liquidus viscosity glasses for flat panel displays
US5508237A (en) * 1994-03-14 1996-04-16 Corning Incorporated Flat panel display
JP3831957B2 (en) 1994-09-14 2006-10-11 旭硝子株式会社 Glass composition and substrate for plasma display
US5631195A (en) 1994-09-14 1997-05-20 Asahi Glass Company Ltd. Glass composition and substrate for plasma display
DE69508706T2 (en) * 1994-11-30 1999-12-02 Asahi Glass Co Ltd Alkali-free glass and flat screen
US6169047B1 (en) * 1994-11-30 2001-01-02 Asahi Glass Company Ltd. Alkali-free glass and flat panel display
US5885914A (en) * 1995-07-28 1999-03-23 Asahi Glass Company Ltd. Alkali-free glass and display substrate
JP3804111B2 (en) * 1995-07-28 2006-08-02 旭硝子株式会社 Alkali-free glass and display substrate
DE19680966T1 (en) * 1995-09-28 1998-01-08 Nippon Electric Glass Co Alkali-free glass substrate
DE19603698C1 (en) * 1996-02-02 1997-08-28 Schott Glaswerke Alkali-free aluminoborosilicate glass and its use
US5908794A (en) 1996-03-15 1999-06-01 Asahi Glass Company Ltd. Glass composition for a substrate
DE19617344C1 (en) * 1996-04-30 1997-08-07 Schott Glaswerke Alkali-free alumino:borosilicate glass
US6508083B1 (en) * 1996-08-21 2003-01-21 Nippon Electric Glass Co., Ltd. Alkali-free glass and method for producing the same
JPH10152339A (en) 1996-09-27 1998-06-09 Nippon Sheet Glass Co Ltd Heat-resistant class composition
US6137048A (en) 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
US6060168A (en) * 1996-12-17 2000-05-09 Corning Incorporated Glasses for display panels and photovoltaic devices
FR2758550B1 (en) 1997-01-17 1999-02-12 Saint Gobain Vitrage SILICO-SODO-CALCIUM GLASS COMPOSITIONS AND THEIR APPLICATIONS
FR2759077B1 (en) 1997-02-03 1999-04-23 Corning Sa IMPROVED PHOTOCHROMIC LENSES
CA2278518A1 (en) 1997-02-03 1998-08-06 Yves A.H. Brocheton Improved photochromic glasses
DE19739912C1 (en) * 1997-09-11 1998-12-10 Schott Glas New alkali-free aluminoborosilicate glass
JPH11135819A (en) 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd Compound thin-film solar cell
JPH11180727A (en) 1997-12-22 1999-07-06 Central Glass Co Ltd Substrate glass composition for display device
JPH11180728A (en) 1997-12-22 1999-07-06 Central Glass Co Ltd Substrate glass composition for display device
JP4320823B2 (en) 1998-02-27 2009-08-26 旭硝子株式会社 Substrate glass composition
JPH11310433A (en) 1998-04-27 1999-11-09 Central Glass Co Ltd Substrate glass for display device
EP0953549B1 (en) 1998-04-28 2002-09-11 Asahi Glass Company Ltd. Plate glass and substrate glass for electronics
JPH11335133A (en) 1998-05-27 1999-12-07 Central Glass Co Ltd Substrate glass for display device
CN1160268C (en) 1998-11-30 2004-08-04 康宁股份有限公司 Glasses for flat panel displays
US6207603B1 (en) 1999-02-05 2001-03-27 Corning Incorporated Solar cell cover glass
JP3056200B1 (en) 1999-02-26 2000-06-26 鐘淵化学工業株式会社 Method of manufacturing thin film photoelectric conversion device
DE19916296C1 (en) * 1999-04-12 2001-01-18 Schott Glas Alkali-free aluminoborosilicate glass and its use
DE19934072C2 (en) 1999-07-23 2001-06-13 Schott Glas Alkali-free aluminoborosilicate glass, its uses and processes for its manufacture
DE19939789A1 (en) 1999-08-21 2001-02-22 Schott Glas Alkali-free aluminoborosilicate glasses and their uses
DE19942259C1 (en) 1999-09-04 2001-05-17 Schott Glas Alkaline earth aluminum borosilicate glass and its uses
DE10000838B4 (en) 2000-01-12 2005-03-17 Schott Ag Alkali-free aluminoborosilicate glass and its uses
DE10000837C1 (en) * 2000-01-12 2001-05-31 Schott Glas Alkali-free alumino-borosilicate glass used as substrate glass in thin film transistor displays and thin layer solar cells contains oxides of silicon, boron, aluminum, magnesium, strontium, and barium
DE10000839C1 (en) 2000-01-12 2001-05-10 Schott Glas Alkali-free aluminoborosilicate glass used as substrate glass in displays and in thin layer photovoltaics contains oxides of silicon, boron, aluminum, magnesium, calcium, strontium, barium and zinc
DE10000836B4 (en) 2000-01-12 2005-03-17 Schott Ag Alkali-free aluminoborosilicate glass and its uses
DE10005088C1 (en) 2000-02-04 2001-03-15 Schott Glas Aluminoborosilicate glass used e.g. as substrate glass in thin layer photovoltaic cells contains oxides of silicon, boron, aluminum, sodium, potassium, calcium, strontium, barium, tin, zirconium, titanium and zinc
WO2001078154A2 (en) 2000-04-10 2001-10-18 Davis, Joseph & Negley Preparation of cigs-based solar cells using a buffered electrodeposition bath
US7211957B2 (en) * 2000-05-05 2007-05-01 Telux-Spezialglas Gmbh Alumino earth-alkali silicate glasses with high thermal capacity for light bulbs and use thereof
DE10022769A1 (en) * 2000-05-05 2001-11-08 Telux Lampenrohr Gmbh Alumino-alkaline earth silicate glass used for bulbs in tungsten halogen glow lamps has a low water content
JP2002025762A (en) 2000-07-04 2002-01-25 Nippon Electric Glass Co Ltd Glass board for inorganic el display
JP2002053340A (en) 2000-08-09 2002-02-19 Nippon Electric Glass Co Ltd Glass substrate of inorganic el display
DE10064804C2 (en) * 2000-12-22 2003-03-20 Schott Glas Alkali-free aluminoborosilicate glasses and their use
JP2002193636A (en) * 2000-12-25 2002-07-10 Nippon Sheet Glass Co Ltd Nonalkali glass and method of manufacturing it, and flat display panel obtained by using it
JP2002308643A (en) * 2001-02-01 2002-10-23 Nippon Electric Glass Co Ltd Alkali-free glass and glass substrate for display
DE10114581C2 (en) * 2001-03-24 2003-03-27 Schott Glas Alkali-free aluminoborosilicate glass and uses
JP3995902B2 (en) 2001-05-31 2007-10-24 Ｈｏｙａ株式会社 Glass substrate for information recording medium and magnetic information recording medium using the same
JP3532178B2 (en) 2001-10-22 2004-05-31 Ｈｏｙａ株式会社 Window material glass for semiconductor package and method of manufacturing the same
US6753279B2 (en) 2001-10-30 2004-06-22 Corning Incorporated Glass composition for display panels
JP2003261352A (en) 2002-03-08 2003-09-16 Asahi Techno Glass Corp Glass for display and glass part for display
JP4265157B2 (en) 2002-07-01 2009-05-20 日本電気硝子株式会社 Glass substrate for flat panel display
US6992030B2 (en) 2002-08-29 2006-01-31 Corning Incorporated Low-density glass for flat panel display substrates
JP4320772B2 (en) 2003-02-13 2009-08-26 日本電気硝子株式会社 Glass substrate for flat panel display
CN1764610A (en) * 2003-03-31 2006-04-26 旭硝子株式会社 Alkali free glass
WO2005063642A1 (en) * 2003-12-26 2005-07-14 Asahi Glass Company, Limited No alkali glass, method for production thereof and liquid crystalline display panel
JP5109225B2 (en) * 2003-12-26 2012-12-26 旭硝子株式会社 Alkali-free glass and liquid crystal display panel
JP4371841B2 (en) 2004-02-09 2009-11-25 Ｈｏｙａ株式会社 Window glass for semiconductor packages
DE102004033653B4 (en) 2004-07-12 2013-09-19 Schott Ag Use of a glass for EEFL fluorescent lamps
DE202005004459U1 (en) * 2004-07-12 2005-11-24 Schott Ag Glass for bulbs with external electrodes
JP2008511137A (en) 2004-08-18 2008-04-10 コーニング インコーポレイテッド Semiconductor structure on insulator with high strain glass / glass-ceramic
JP2006188406A (en) 2005-01-07 2006-07-20 Asahi Glass Co Ltd Vacuum envelope for flat panel display and flat panel display using it
JP4977965B2 (en) * 2005-05-02 2012-07-18 旭硝子株式会社 Alkali-free glass and method for producing the same
KR100750990B1 (en) 2005-06-22 2007-08-22 주식회사 케이씨씨 High Strain-point Glass composition for substrate
EP1899275A1 (en) 2005-06-28 2008-03-19 Corning Incorporated Fining of boroalumino silicate glasses
KR100977699B1 (en) * 2005-07-06 2010-08-24 아사히 가라스 가부시키가이샤 Process for production of non-alkaline glass and non-alkaline glass
CN102249541B (en) 2005-08-15 2013-03-27 安瀚视特股份有限公司 Glass composition
WO2007052489A1 (en) 2005-10-31 2007-05-10 Ohara Inc. Optical glass, apparatus for producing optical glass, and process for producing the same
US8156763B2 (en) * 2005-11-15 2012-04-17 Avanstrate, Inc. Method of producing glass
KR101399745B1 (en) 2006-02-10 2014-05-26 코닝 인코포레이티드 Glass composition having high thermal and chemical stability and methods of making thereof
US8389852B2 (en) 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
JP5013304B2 (en) 2006-03-17 2012-08-29 日本電気硝子株式会社 Glass substrate for display
US7235736B1 (en) 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
JP2007284307A (en) 2006-04-19 2007-11-01 Central Glass Co Ltd Substrate glass for display device
JP5703535B2 (en) * 2006-05-23 2015-04-22 日本電気硝子株式会社 Alkali-free glass substrate
CN101454252A (en) 2006-05-25 2009-06-10 日本电气硝子株式会社 Tempered glass and process for producing the same
CN101484838B (en) * 2006-06-30 2011-11-02 旭硝子株式会社 Liquid crystal display panel
CN101489944A (en) * 2006-07-13 2009-07-22 旭硝子株式会社 Alkali-free glass substrate, process for production of the same and liquid crystal display panels
JP5359271B2 (en) * 2006-07-13 2013-12-04 旭硝子株式会社 Non-alkali glass substrate, method for producing the same, and liquid crystal display panel
DE102006042620B4 (en) 2006-09-04 2012-01-26 Schott Ag Use of an aluminoborosilicate glass as a substrate glass
JP5071878B2 (en) 2006-09-12 2012-11-14 日本電気硝子株式会社 Alkali-free glass and alkali-free glass substrate using the same
US20080128020A1 (en) 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
US20080130171A1 (en) 2006-11-30 2008-06-05 Francis Martin Behan Calcium aluminosilicate glasses for use as information recording medium substrates
JP5808069B2 (en) 2007-02-16 2015-11-10 日本電気硝子株式会社 Glass substrate for solar cell
JP5483821B2 (en) 2007-02-27 2014-05-07 ＡｖａｎＳｔｒａｔｅ株式会社 Glass substrate for display device and display device
JP2008280189A (en) 2007-05-08 2008-11-20 Nippon Electric Glass Co Ltd Glass substrate for solar cell, and method of manufacturing the same
US7666511B2 (en) 2007-05-18 2010-02-23 Corning Incorporated Down-drawable, chemically strengthened glass for cover plate
CN101117270B (en) 2007-06-07 2016-03-02 河南安彩高科股份有限公司 The aluminium borosilicate glass of high elastic coefficient and application thereof
JP5435394B2 (en) * 2007-06-08 2014-03-05 日本電気硝子株式会社 Tempered glass substrate and manufacturing method thereof
JP5234387B2 (en) 2007-06-12 2013-07-10 日本電気硝子株式会社 Alkali-free glass, alkali-free glass substrate and method for producing the same
US20080308146A1 (en) 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
CN101074146B (en) 2007-06-16 2010-10-06 成都光明光电股份有限公司 Low-expansion coefficient glass for absorbing ultraviolet
WO2009054314A1 (en) * 2007-10-25 2009-04-30 Asahi Glass Company, Limited Method for production of non-alkali glass
WO2009078421A1 (en) 2007-12-19 2009-06-25 Nippon Electric Glass Co., Ltd. Glass substrate
TW200940473A (en) 2008-03-21 2009-10-01 Lighting Glass Company Ltd L Low-sodium-oxide glass and glass tube
US8187715B2 (en) * 2008-05-13 2012-05-29 Corning Incorporated Rare-earth-containing glass material and substrate and device comprising such substrate
RU2010154445A (en) * 2008-05-30 2012-07-10 Фостер Вилер Энергия Ой (Fi) METHOD AND SYSTEM FOR ENERGY GENERATION BY BURNING IN PURE OXYGEN
US8975199B2 (en) * 2011-08-12 2015-03-10 Corsam Technologies Llc Fusion formable alkali-free intermediate thermal expansion coefficient glass
US20120132282A1 (en) * 2010-11-30 2012-05-31 Bruce Gardiner Aitken Alkali-free high strain point glass
US8445394B2 (en) 2008-10-06 2013-05-21 Corning Incorporated Intermediate thermal expansion coefficient glass
TWI494286B (en) * 2009-03-19 2015-08-01 Nippon Electric Glass Co Alkali-free glass
DE102009050988B3 (en) 2009-05-12 2010-11-04 Schott Ag Thin film solar cell
DE102009050987B3 (en) 2009-05-12 2010-10-07 Schott Ag Planar, curved, spherical or cylindrical shaped thin film solar cell comprises sodium oxide-containing multicomponent substrate glass, which consists of barium oxide, calcium oxide, strontium oxide and zinc oxide
TWI478889B (en) * 2010-10-06 2015-04-01 Corning Inc Alkali-free glass compositions having high thermal and chemical stability
EP2668141B1 (en) * 2011-01-25 2020-09-16 Corning Incorporated Glass compositions having high thermal and chemical stability
US9162919B2 (en) * 2012-02-28 2015-10-20 Corning Incorporated High strain point aluminosilicate glasses

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7019207B2 (en) * 2000-03-30 2006-03-28 Hahn-Meitner-Institut Berlin Gmbh. Method for producing a solar module with thin-film solar cells which are series-connected in an integrated manner and solar modules produced according to the method, especially using concentrator modules
WO2007138832A1 (en) * 2006-05-25 2007-12-06 Nippon Electric Glass Co., Ltd. Nonalkaline glass and nonalkaline glass substrates

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11643356B2 (en) 2017-11-17 2023-05-09 Corning Incorporated Water-containing glass-based articles with high indentation cracking threshold
US11760685B2 (en) 2017-11-17 2023-09-19 Corning Incorporated Water-containing glass-based articles with high indentation cracking threshold
US20200156995A1 (en) * 2018-11-16 2020-05-21 Corning Incorporated Water vapor strengthenable alkali-free glass compositions
US11767258B2 (en) 2018-11-16 2023-09-26 Corning Incorporated Glass compositions and methods for strengthening via steam treatment
US11505492B2 (en) 2019-05-16 2022-11-22 Corning Incorporated Glass compositions and methods with steam treatment haze resistance
US11767255B2 (en) 2019-05-16 2023-09-26 Corning Incorporated Glass compositions and methods with steam treatment haze resistance
WO2020251813A1 (en) * 2019-06-13 2020-12-17 Corning Incorporated Display compositions containing phosphorous and low ionic field strength modifiers
CN114040895A (en) * 2019-06-13 2022-02-11 康宁公司 Display compositions comprising phosphorus and low ionic field strength modifiers

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