JP2002025762A - Glass board for inorganic el display - Google Patents

Glass board for inorganic el display

Info

Publication number
JP2002025762A
JP2002025762A JP2000202820A JP2000202820A JP2002025762A JP 2002025762 A JP2002025762 A JP 2002025762A JP 2000202820 A JP2000202820 A JP 2000202820A JP 2000202820 A JP2000202820 A JP 2000202820A JP 2002025762 A JP2002025762 A JP 2002025762A
Authority
JP
Japan
Prior art keywords
inorganic
glass
display
substrate
glass board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000202820A
Other languages
Japanese (ja)
Inventor
Hiroki Yamazaki
博樹 山崎
Tomohiro Nagakane
知浩 永金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP2000202820A priority Critical patent/JP2002025762A/en
Publication of JP2002025762A publication Critical patent/JP2002025762A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum

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  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Glass Compositions (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a glass board for inorganic EL display which is to be used as back-face base board, capable of being embodied in a lightweight and small-sized construction, free of the risk of thermal deformation even if subjected to a baking process at 650-700 deg.C, and having a higher volume electric resistance than a soda lime glass board. SOLUTION: The composition of the glass board for inorganic EL display consists by mass percentage of 45-85% SiO2, 0-20% Al2O3, 0-10% MgO, 0-15% CaO, 0-15% SrO, 0-15% BaO, 0-2% Li2O, 0-15% Na2O, 0-20% K2O, 0-10% ZiO2, 0-5% B2O3, 0-5% TiO3 and 0.2-10% P2O5, and the strain point is above 520 deg.C.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、無機EL(エレクトロ
ルミネッセンス)ディスプレイガラス基板に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inorganic EL (electroluminescence) display glass substrate.

【0002】[0002]

【従来の技術】無機ELディスプレイは、薄型軽量で表
示が鮮明であり、画像の微細化が容易であるため高品位
画像が実現でき、フルカラー化が可能であるなど、多く
の利点を有するため、今後表示装置として益々普及する
傾向にある。
2. Description of the Related Art Inorganic EL displays have many advantages, such as being thin and lightweight, having a clear display, and being easy to miniaturize images, thereby realizing high-quality images and being capable of full color. In the future, it is becoming more and more popular as a display device.

【0003】無機ELディスプレイは、例えば図1に示
すように、背面基板10上に金属電極11、第1の誘電
体層12、無機EL発光体層13、第2の誘電体層1
4、ITO電極15、RGBカラーフィルター16、前
面基板17が順番に積層された構造を有している。
As shown in FIG. 1, for example, an inorganic EL display has a metal electrode 11, a first dielectric layer 12, an inorganic EL light emitting layer 13, and a second dielectric layer 1 on a rear substrate 10.
4, an ITO electrode 15, an RGB color filter 16, and a front substrate 17 are sequentially laminated.

【0004】このような構造を有する無機ELディスプ
レイは、金属電極11とITO電極15に電圧を印加し
て無機EL発光体層13を励起することにより光を発生
させ、これをRGBカラーフィルター16で色変換する
ようになっている。
In the inorganic EL display having such a structure, light is generated by applying a voltage to the metal electrode 11 and the ITO electrode 15 to excite the inorganic EL light emitting layer 13, and the light is generated by an RGB color filter 16. Color conversion is performed.

【0005】[0005]

【発明が解決しようとする課題】近年、無機ELディス
プレイは、家庭用テレビ等に利用することが試みられて
おり、大型ディスプレイ用として、40〜60型程度の
大きさの基板が要求されている。また12型以下の小型
ディスプレイを作製する場合でも、1枚毎に背面基板を
作製するよりも、一旦大型基板を作製してから、それを
複数枚に分割切断する方が、遙かに生産効率が高いた
め、この点からも基板の大型化が望まれている。
In recent years, attempts have been made to use an inorganic EL display for a home television or the like, and a substrate having a size of about 40 to 60 inches is required for a large display. . Even when manufacturing a small display of 12 inches or less, it is far more productive to produce a large substrate and then cut it into multiple substrates than to produce a back substrate for each one. Therefore, the size of the substrate is desired to be increased from this point as well.

【0006】従来より無機ELディスプレイの製造工程
において、背面基板に誘電体層や蛍光体層を形成するに
は、これらの材料をペースト法等で背面基板に塗布し、
乾燥した後、約800℃で焼成する方法が採られてい
る。そのため、背面基板としては、耐熱性の高いアルミ
ナ基板が主に使用されている。
Conventionally, in the process of manufacturing an inorganic EL display, to form a dielectric layer or a phosphor layer on the rear substrate, these materials are applied to the rear substrate by a paste method or the like.
After drying, a method of firing at about 800 ° C. is employed. Therefore, an alumina substrate having high heat resistance is mainly used as the back substrate.

【0007】ところがアルミナから大型基板を作製する
ことは非常に困難であり、コストが極めて高くなるとい
う問題がある。しかもアルミナ基板は、密度が4g/c
3程度と大きいため、無機ELディスプレイの軽量化
を図る際の大きな障害となっている。
However, it is very difficult to produce a large substrate from alumina, and there is a problem that the cost is extremely high. Moreover, the alumina substrate has a density of 4 g / c.
Since it is as large as about m 3, it is a major obstacle in reducing the weight of the inorganic EL display.

【0008】一方、無機ELディスプレイの前面基板と
しては、安価なソーダライムガラス基板が使用されてお
り、このガラス基板は、大板状に成形可能で、密度も低
いが、これを800℃の高温で焼成すると、熱変形を起
こすため、背面基板としては使用できない。
On the other hand, an inexpensive soda-lime glass substrate is used as the front substrate of the inorganic EL display. This glass substrate can be formed into a large plate shape and has a low density. When baking is performed, thermal deformation occurs, so that it cannot be used as a back substrate.

【0009】近年、無機ELディスプレイの生産コスト
を下げるため、焼成温度の低温化が図られ、現在では6
50〜700℃程度の温度で均一な誘電体層や発光体層
を形成する技術が開発され、満足な色純度のディスプレ
イを作製できるようになってきているが、このような焼
成条件であっても、背面基板としてソーダライムガラス
基板を使用すると、やはり熱変形を起こす。
In recent years, the firing temperature has been lowered to reduce the production cost of inorganic EL displays.
Techniques for forming a uniform dielectric layer or luminous layer at a temperature of about 50 to 700 ° C. have been developed, and a display having a satisfactory color purity has been able to be manufactured. However, when a soda lime glass substrate is used as the rear substrate, thermal deformation also occurs.

【0010】従ってソーダライムガラス基板を背面基板
に用いようとすると、誘電体層と発光体層の焼成を65
0℃以下の温度、すなわちガラス基板が熱変形しない温
度で行う必要があるが、このような低温焼成では、均一
な誘電体層や発光体層が得られず、無機ELディスプレ
イの色純度が著しく悪くなり、使用に耐えなくなる。
Therefore, when an attempt is made to use a soda lime glass substrate as the rear substrate, the firing of the dielectric layer and the luminous layer is carried out by 65%.
It is necessary to perform the process at a temperature of 0 ° C. or less, that is, at a temperature at which the glass substrate does not thermally deform. However, such low-temperature baking does not provide a uniform dielectric layer or luminous layer, and the color purity of the inorganic EL display is remarkably high. It becomes worse and cannot be used.

【0011】さらにソーダライムガラスは、150℃で
の体積電気抵抗率(log ρ)が8.4Ω・cmと低
く、ガラス中のアルカリ成分の移動度が大きいため、こ
れを無機ELディスプレイの背面基板として用いると、
ガラス中のアルカリ成分が金属電極と反応し、電極材料
の電気抵抗を変化させるという問題もある。
Further, soda lime glass has a low volume electrical resistivity (log ρ) at 150 ° C. of 8.4 Ω · cm and a high mobility of alkali components in the glass. When used as
There is also a problem that an alkali component in the glass reacts with the metal electrode and changes the electric resistance of the electrode material.

【0012】本発明は、上記事情に鑑みなされたもので
あり、背面基板として用い、650〜700℃で焼成さ
れても熱変形が起こらず、またソーダライムガラス基板
に比べて体積電気抵抗率が高く、軽量化、大型化が可能
な無機ELディスプレイガラス基板を提供することを目
的とする。
The present invention has been made in view of the above circumstances, and is used as a rear substrate, does not undergo thermal deformation even when fired at 650 to 700 ° C., and has a lower volume electrical resistivity than a soda lime glass substrate. It is an object of the present invention to provide an inorganic EL display glass substrate which can be made high, lightweight and large.

【0013】[0013]

【課題を解決するための手段】本発明者等は、上記目的
を達成すべく種々の実験を繰り返した結果、650〜7
00℃の焼成工程で背面基板の熱変形を起こさないため
には、背面基板として、歪点が520℃以上のガラス基
板を使用すれば良いことを見いだし、本発明を提案する
に至った。
The present inventors have conducted various experiments to achieve the above object, and as a result, have obtained
It has been found that a glass substrate having a strain point of 520 ° C. or more should be used as the rear substrate in order to prevent the rear substrate from being thermally deformed in the baking process at 00 ° C., and the present invention has been proposed.

【0014】すなわち本発明の無機ELディスプレイガ
ラス基板は、質量百分率で、SiO 2 45〜85%、
Al23 0〜20%、MgO 0〜10%、CaO
0〜15%、SrO 0〜15%、BaO 0〜15
%、Li2O 0〜2%、Na2O 0〜15%、K2
0〜20%、ZrO2 0〜10%、B23 0〜5
%、TiO2 0〜5%、P25 0.2〜10%の組
成を有し、歪点が520℃以上であることを特徴とす
る。
That is, the inorganic EL display gas of the present invention
The glass substrate is SiO. Two 45-85%,
AlTwoOThree 0-20%, MgO 0-10%, CaO
0-15%, SrO 0-15%, BaO 0-15
%, LiTwoO 0-2%, NaTwoO 0-15%, KTwoO
 0-20%, ZrOTwo 0-10%, BTwoOThree 0-5
%, TiOTwo 0-5%, PTwoOFive 0.2-10% set
Having a strain point of 520 ° C. or higher.
You.

【0015】また本発明の無機ELディスプレイガラス
基板は、30〜380℃の温度範囲における熱膨張係数
が50〜100×10-7/℃からなることを特徴とす
る。
Further, the inorganic EL display glass substrate of the present invention is characterized in that the coefficient of thermal expansion in a temperature range of 30 to 380 ° C. is 50 to 100 × 10 −7 / ° C.

【0016】[0016]

【発明の実施の形態】本発明の無機ELディスプレイガ
ラス基板は、質量百分率で、SiO2 45〜85%、
Al23 0〜20%、MgO 0〜10%、CaO
0〜15%、SrO 0〜15%、BaO 0〜15
%、Li2O 0〜2%、Na2O 0〜15%、K2
0〜20%、ZrO2 0〜10%、B23 0〜5
%、TiO 2 0〜5%、P25 0.2〜10%の組
成を有し、歪点が520℃以上(好ましくは550℃以
上、より好ましくは570℃以上)であるため、背面基
板として使用し、650〜700℃で焼成されても熱変
形を起こすことがなく、しかもソーダライムガラス基板
に比べて、体積電気抵抗率が高いため、無機ELディス
プレイの電極材料の電気抵抗値が変化し難い。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Inorganic EL display gas of the present invention
The glass substrate is SiO.Two 45-85%,
AlTwoOThree 0-20%, MgO 0-10%, CaO
0-15%, SrO 0-15%, BaO 0-15
%, LiTwoO 0-2%, NaTwoO 0-15%, KTwoO
 0-20%, ZrOTwo 0-10%, BTwoOThree 0-5
%, TiO Two 0-5%, PTwoOFive 0.2-10% set
Having a strain point of 520 ° C or higher (preferably 550 ° C or lower).
Above, more preferably 570 ° C. or higher).
Used as a plate, heat transforms even when fired at 650-700 ° C
No sodalime glass substrate
Has a higher volumetric electrical resistivity than that of inorganic EL displays.
The electric resistance value of the electrode material of the play is hard to change.

【0017】また、本発明のガラス基板のようなアルミ
ノシリケートガラス基板は、ソーダライムガラス基板に
比べて割れやすいという欠点があるが、本発明の無機E
Lディスプレイガラス基板は、P25を0.2%以上含
有するため、クラック抵抗が高く、割れにくい。
Further, an aluminosilicate glass substrate such as the glass substrate of the present invention has a disadvantage that it is liable to break as compared with a soda lime glass substrate, but the inorganic E glass of the present invention has a disadvantage.
Since the L display glass substrate contains 0.2% or more of P 2 O 5 , it has high crack resistance and is hardly broken.

【0018】さらに本発明においては、基板の熱膨張係
数を、30〜380℃の温度範囲において50〜100
×10-7/℃(好ましくは、60〜90×10-7/℃)
とし、前面基板や誘電体層の熱膨張係数に近似させる
と、前面基板や誘電体材料との間で熱応力が発生するこ
ともないため、より好ましい。
Further, in the present invention, the coefficient of thermal expansion of the substrate is set to 50 to 100 in a temperature range of 30 to 380 ° C.
× 10 -7 / ° C (preferably 60 to 90 × 10 -7 / ° C)
It is more preferable that the thermal expansion coefficient is approximated to that of the front substrate or the dielectric layer, since no thermal stress is generated between the front substrate and the dielectric material.

【0019】また、このようなガラス基板は、大板状に
成形可能であるため、40〜60型の大型ディスプレイ
基板を安価に作製することができ、しかも一旦、大板ガ
ラスを作製してから、それを複数枚に分割切断すること
によって、12型以下の小型ディスプレイ基板を安価に
作製することが可能である。
Since such a glass substrate can be formed into a large plate, a large display substrate of 40 to 60 inches can be manufactured at a low cost. By dividing and cutting it into a plurality of pieces, a small display substrate of 12 inches or less can be manufactured at low cost.

【0020】本発明のガラス基板は、周知の板ガラス成
形法、すなわちフロート法、ロールアウト法、スロット
ダウンドロー法、オーバーフローダウンドロー法等によ
って作製することができ、これらの方法によって大型の
基板状に成形することが可能である。
The glass substrate of the present invention can be manufactured by a well-known sheet glass forming method, that is, a float method, a roll-out method, a slot down draw method, an overflow down draw method, or the like. It is possible to mold.

【0021】本発明の無機ELディスプレイガラス基板
の組成を上記のように限定した理由は、次の通りであ
る。
The reasons for limiting the composition of the inorganic EL display glass substrate of the present invention as described above are as follows.

【0022】SiO2は、ガラスの歪点を高める成分で
あり、その含有量は、45〜85%である。45%より
少ないと、ガラスの歪点が低下し、熱変形が起こりやす
くなる。一方、85%より多いと、熱膨張係数が低くな
りすぎるため好ましくない。SiO2の好ましい含有量
は、50〜70%である。
SiO 2 is a component for increasing the strain point of glass, and its content is 45 to 85%. If it is less than 45%, the strain point of the glass decreases, and thermal deformation tends to occur. On the other hand, if it is more than 85%, the thermal expansion coefficient becomes too low, which is not preferable. The preferred content of SiO 2 is 50 to 70%.

【0023】Al23もガラスの歪点を高める成分であ
り、その含有量は、0〜20%である。20%より多い
と、ガラスの溶融性が低下するため好ましくない。Al
23の好ましい含有量は、1〜15%である。
Al 2 O 3 is also a component that increases the strain point of glass, and its content is 0 to 20%. If it is more than 20%, the melting property of the glass is undesirably reduced. Al
The preferable content of 2 O 3 is 1 to 15%.

【0024】MgOは、ガラスの熱膨張係数を制御した
り、溶融性を向上する成分であり、その含有量は、0〜
10%である。10%より多いと、失透しやすくなるた
め好ましくない。MgOの好ましい含有量は、1〜7%
である。
MgO is a component that controls the coefficient of thermal expansion of glass and improves the melting property.
10%. If it is more than 10%, devitrification tends to occur, which is not preferable. The preferred content of MgO is 1-7%
It is.

【0025】CaOは、ガラスの溶融性及び体積電気抵
抗値を向上する成分であり、その含有量は、0〜15%
である。15%より多いと、失透しやすくなると共に耐
クラック性が低下するため好ましくない。CaOの好ま
しい含有量は、1〜10%である。
CaO is a component for improving the melting property and volume electric resistance of glass, and its content is 0 to 15%.
It is. If it is more than 15%, the glass tends to be devitrified and the crack resistance is undesirably reduced. The preferred content of CaO is 1 to 10%.

【0026】SrOは、ガラスの溶融性及び体積電気抵
抗値を高める成分であり、その含有量は、0〜15%で
ある。15%より多いと、ガラスの密度が上昇して基板
の重量が重くなりすぎるため好ましくない。SrOの好
ましい含有量は、0〜8%である。
SrO is a component that enhances the melting property and volume electric resistance of the glass, and its content is 0 to 15%. If it is more than 15%, the density of the glass increases and the weight of the substrate becomes too heavy, which is not preferable. The preferred content of SrO is 0 to 8%.

【0027】BaOは、SrOと同様、ガラスの溶融性
及び体積電気抵抗値を高める成分であり、その含有量
は、0〜15%である。15%より多いと、ガラスの密
度が上昇して基板の重量が重くなりすぎるため好ましく
ない。BaOの好ましい含有量は、0〜8%である。
BaO, like SrO, is a component that increases the melting property and volume electric resistance of the glass, and its content is 0 to 15%. If it is more than 15%, the density of the glass increases and the weight of the substrate becomes too heavy, which is not preferable. The preferable content of BaO is 0 to 8%.

【0028】Li2Oは、ガラスの熱膨張係数を制御し
たり、溶融性を高める成分であり、その含有量は、0〜
2%である。2%より多いと、ガラスの歪点が低下する
ため好ましくない。Li2Oの好ましい含有量は、0〜
1%である。
Li 2 O is a component that controls the coefficient of thermal expansion of glass and enhances the meltability.
2%. If it is more than 2%, the strain point of the glass decreases, which is not preferable. The preferred content of Li 2 O is 0 to
1%.

【0029】Na2Oは、Li2Oと同様、ガラスの熱膨
張係数を制御したり、溶融性を高める成分であり、その
含有量は、0〜15%である。15%より多いと、ガラ
スの歪点が低下するため好ましくない。Na2Oの好ま
しい含有量は、0〜6%である。
Na 2 O, like Li 2 O, is a component that controls the thermal expansion coefficient of the glass and enhances the melting property, and its content is 0 to 15%. If it is more than 15%, the strain point of the glass decreases, which is not preferable. Preferred content of Na 2 O, 0 to 6%.

【0030】K2Oも、Li2OやNa2Oと同様、ガラ
スの熱膨張係数を制御したり、溶融性を高める成分であ
り、その含有量は、0〜20%である。20%より多い
と、ガラスの歪点が低下するため好ましくない。K2
の好ましい含有量は、4〜15%である。
K 2 O, like Li 2 O and Na 2 O, is a component that controls the coefficient of thermal expansion of glass and enhances the melting property, and its content is 0 to 20%. If it is more than 20%, the strain point of the glass decreases, which is not preferable. K 2 O
Is preferably 4 to 15%.

【0031】ZrO2は、ガラスの歪点を高める成分で
あり、その含有量は、0〜10%である。10%より多
いと、ガラスの耐クラック性が著しく低下すると共に、
ガラスの密度が高くなり、基板の重量が大きくなるため
好ましくない。ZrO2の好ましい含有量は、0〜5%
である。
ZrO 2 is a component for increasing the strain point of glass, and its content is 0 to 10%. If it is more than 10%, the crack resistance of the glass is significantly reduced, and
It is not preferable because the density of the glass increases and the weight of the substrate increases. The preferable content of ZrO 2 is 0 to 5%.
It is.

【0032】B23は、ガラスの溶融性を向上する成分
であり、その含有量は、0〜5%である。5%より多い
と、ガラスの歪点が低下するため好ましくない。B23
の好ましい含有量は、0〜2%である。
B 2 O 3 is a component for improving the melting property of glass, and its content is 0 to 5%. If it is more than 5%, the strain point of the glass decreases, which is not preferable. B 2 O 3
Is preferably 0 to 2%.

【0033】TiO2は、ガラスの化学的耐久性を向上
すると共に、紫外線によるガラスの着色を防止する成分
であり、その含有量は、0〜5%である。5%より多い
と、ガラスの密度が高くなり、基板の重量が大きくなり
すぎる。TiO2の好ましい含有量は、0〜1%であ
る。
TiO 2 is a component that improves the chemical durability of the glass and prevents the glass from being colored by ultraviolet rays, and its content is 0 to 5%. If it is more than 5%, the density of the glass increases and the weight of the substrate becomes too large. The preferred content of TiO 2 is 0 to 1%.

【0034】P25は、ガラス基板の耐クラック性を向
上させる成分であり、その含有量は、0.2〜10%で
ある。0.2より少ないと、耐クラック性を高める効果
が小さく、10%より多いと、体積電気抵抗率が低下す
るため好ましくない。P25の好ましい含有量は、0.
5〜3%である。
P 2 O 5 is a component for improving the crack resistance of the glass substrate, and its content is 0.2 to 10%. If it is less than 0.2, the effect of increasing the crack resistance is small, and if it is more than 10%, the volume electric resistivity decreases, which is not preferable. The preferred content of P 2 O 5 is 0.
5 to 3%.

【0035】本発明においては、上記成分以外にも、A
23、Sb23、SO3、Cl等の清澄剤を合量で1
%まで、Fe23、CoO、NiO、Cr23、CeO
2等の着色剤を各々1%まで含有させることができる。
In the present invention, in addition to the above components,
A fining agent such as s 2 O 3 , Sb 2 O 3 , SO 3 , and Cl is added in a total amount of 1
%, Fe 2 O 3 , CoO, NiO, Cr 2 O 3 , CeO
Colorants such as 2 can each contain up to 1%.

【0036】ただし環境面を考えると、有害なAs23
の添加は避けるべきであり、またガラス中に多量のNa
2OとK2Oが含まれていると、焼成時にガラス中のアル
カリイオンが誘電体層等に拡散し、特性の劣化を招きや
すいため、Na2OとK2Oの合量を20質量%以下に抑
えることが望ましい。
However, considering the environmental aspect, harmful As 2 O 3
Should be avoided and large amounts of Na
When 2 O and K 2 O are contained, alkali ions in the glass are diffused into the dielectric layer and the like at the time of sintering, and characteristics are likely to be degraded. Therefore, the total amount of Na 2 O and K 2 O is set to 20 mass%. % Is desirable.

【0037】さらに本発明では、ガラス基板の密度が低
くなるほど、無機ELディスプレイの軽量化が図れるた
め好ましく、具体的には、密度を3.0g/cm3以下
(好ましくは、2.8g/cm3以下)にすることが望
ましい。
Furthermore, in the present invention, the lower the density of the glass substrate, the more the inorganic EL display can be reduced in weight. Therefore, the density is preferably 3.0 g / cm 3 or less (preferably 2.8 g / cm 3 ). 3 or less).

【0038】[0038]

【実施例】以下、本発明の無機ELディスプレイガラス
基板を実施例に基づいて詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following, the inorganic EL display glass substrate of the present invention will be described in detail based on embodiments.

【0039】表1、2は、本発明の無機ELディスプレ
イガラス基板の実施例(試料No.1〜9)と比較例
(試料No.10、11)を示すものである。尚、比較
例であるNo.11の試料は、建築用窓板ガラスとして
市販されているソーダライムガラス基板である。
Tables 1 and 2 show examples (samples Nos. 1 to 9) and comparative examples (samples Nos. 10 and 11) of the inorganic EL display glass substrate of the present invention. In addition, No. which is a comparative example. The sample No. 11 is a soda-lime glass substrate which is commercially available as architectural window glass.

【0040】[0040]

【表1】 [Table 1]

【0041】[0041]

【表2】 [Table 2]

【0042】表中のNo.1〜10の各試料は、次のよ
うにして作製した。
No. in the table. Each of the samples 1 to 10 was produced as follows.

【0043】表の各ガラス組成となるようにガラス原料
を調合し、白金ポットで1550℃で5時間溶融した
後、カーボン板上に流し出すことによってガラス基板を
作製した。
Glass raw materials were prepared so as to have the respective glass compositions shown in the table, melted in a platinum pot at 1550 ° C. for 5 hours, and then poured out onto a carbon plate to prepare a glass substrate.

【0044】こうして得られた各試料について、各種の
特性を評価し、その結果を表に示した。
Various characteristics of the thus obtained samples were evaluated, and the results are shown in the table.

【0045】表から明らかなように、実施例であるN
o.1〜10の各試料は、歪点が558℃以上、体積電
気抵抗率が10.6以上、クラック抵抗が600mN以
上、熱膨張係数が73〜85×10-7/℃であり、無機
ELディスプレイの背面基板として適したものであっ
た。しかも、これらの各試料は、密度が低いため軽量化
を図ることができる。
As is clear from the table, the N
o. Each of samples 1 to 10 has a strain point of 558 ° C. or more, a volume resistivity of 10.6 or more, a crack resistance of 600 mN or more, a thermal expansion coefficient of 73 to 85 × 10 −7 / ° C., and an inorganic EL display. It was suitable as a back substrate. In addition, since each of these samples has a low density, the weight can be reduced.

【0046】それに対し、比較例であるNo.10の試
料は、クラック抵抗が440mNと低いため、製造工程
で割れが発生しやすいと思われる。
On the other hand, the comparative example No. Since the sample No. 10 has a low crack resistance of 440 mN, it is considered that cracks are likely to occur in the manufacturing process.

【0047】またNo.11の試料は、歪点が低いた
め、これを無機ELディスプレイの背面基板として用
い、650〜700℃で焼成すると、熱変形が起こるも
のと思われる。また体積電気抵抗率が8.5と低いた
め、電極材料の電気抵抗値を変化させるものと思われ
る。
No. Since the sample No. 11 has a low strain point, when it is used as a back substrate of an inorganic EL display and baked at 650 to 700 ° C., it is considered that thermal deformation occurs. Further, since the volume electric resistivity is as low as 8.5, it is considered that the electric resistance value of the electrode material is changed.

【0048】尚、表中の歪点は、ASTM C336−
71に基づいて測定し、体積電気抵抗値は、ASTM
C657−78に基づいて150℃における値を測定し
た。
The strain points in the table are based on ASTM C336-
And measured according to ASTM 71
The value at 150 ° C. was measured based on C657-78.

【0049】またクラック抵抗は、和田らが提案した方
法(M.Wada et al.Proc., the
Xth ICG,vol.11,Ceram.So
c.,Japan,Kyoto,1974,p39)を
用いた。この方法は、ビッカース硬度計のステージに試
料ガラスを置き、試料ガラスの表面に菱形状のダイヤモ
ンド圧子を種々の荷重で15秒間押しつける。そして、
除荷後、15秒までに圧痕の四隅から発生するクラック
数をカウントし、最大発生しうるクラック数(4ケ)に
対する割合を求め、クラック数をカウントし、最大発生
しうるクラック数(4ケ)に対する割合を求め、クラッ
ク発生率とする。また、クラック発生率が50%になる
ときの荷重を「クラック抵抗」とする。クラック抵抗が
大きいということは、高い荷重でもクラックが発生しに
くい、つまり耐クラック性に優れているということにな
る。尚、クラック発生率の測定は、同一荷重で20回測
定し、その平均値を求めた。測定条件は、気温25℃、
湿度30%の条件で行った。
The crack resistance is determined by the method proposed by Wada et al. (M. Wada et al. Proc., The
Xth ICG, vol. 11, Ceram. So
c. , Japan, Kyoto, 1974, p39). In this method, a sample glass is placed on the stage of a Vickers hardness tester, and a diamond-shaped diamond indenter is pressed against the surface of the sample glass with various loads for 15 seconds. And
After unloading, the number of cracks generated from the four corners of the indentation by 15 seconds is counted, the ratio to the maximum number of possible cracks (4) is calculated, the number of cracks is counted, and the maximum number of cracks (4 ) Is determined and defined as the crack occurrence rate. The load at which the crack occurrence rate becomes 50% is defined as “crack resistance”. High crack resistance means that cracks are unlikely to occur even under a high load, that is, the crack resistance is excellent. The crack occurrence rate was measured 20 times under the same load, and the average value was obtained. The measurement conditions were: air temperature 25 ° C
The test was performed under the condition of a humidity of 30%.

【0050】さらに、熱膨張係数は、ディラトメーター
を用いて、30〜380℃における平均熱膨張係数を測
定した。密度は、周知のアルキメデス法によって測定し
た。
Further, the average coefficient of thermal expansion was measured at 30 to 380 ° C. using a dilatometer. The density was measured by the well-known Archimedes method.

【0051】[0051]

【発明の効果】以上のように本発明の無機ELディスプ
レイガラス基板は、歪点が520℃以上と高く、且つ、
体積電気抵抗率とクラック抵抗が高いため、無機ELデ
ィスプレイの背面基板として好適である。
As described above, the inorganic EL display glass substrate of the present invention has a high strain point of 520 ° C. or higher, and
Because of its high volume resistivity and crack resistance, it is suitable as a back substrate of an inorganic EL display.

【0052】また本発明の無機ELディスプレイガラス
基板は、低密度であるため軽量化を図ることができ、し
かも大型基板を安価に作製することが可能であるため、
40〜60型の大型の家庭用テレビ等の製造が可能とな
り、また小型ディスプレイに用いられる際には、生産性
の大幅な向上が図られる。
Further, since the inorganic EL display glass substrate of the present invention has a low density, the weight can be reduced, and a large-sized substrate can be manufactured at low cost.
It is possible to manufacture large home televisions of 40 to 60 inches, and when used for small displays, the productivity is greatly improved.

【0053】さらに本発明の無機ELディスプレイガラ
ス基板の熱膨張係数を、30〜380℃の温度範囲で5
0〜100×10-7/℃にすると、前面基板や誘電体材
料との間で熱応力が発生し難いという利点も得られる。
Further, the coefficient of thermal expansion of the inorganic EL display glass substrate of the present invention is set to 5 in a temperature range of 30 to 380 ° C.
When the temperature is set to 0 to 100 × 10 −7 / ° C., there is an advantage that thermal stress is hardly generated between the front substrate and the dielectric material.

【図面の簡単な説明】[Brief description of the drawings]

【図1】無機ELディスプレイの構造を示す説明図であ
る。
FIG. 1 is an explanatory diagram showing a structure of an inorganic EL display.

【符号の説明】 10 背面基板 11 金属電極 12 第1の誘電体層 13 無機EL発光体層 14 第2の誘電体層 15 ITO電極 16 RGBカラーフィルター 17 前面基板DESCRIPTION OF SYMBOLS 10 Back substrate 11 Metal electrode 12 First dielectric layer 13 Inorganic EL light emitting layer 14 Second dielectric layer 15 ITO electrode 16 RGB color filter 17 Front substrate

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K007 AB18 CA01 4G062 AA03 BB01 BB03 BB06 DA05 DA06 DA07 DB01 DB02 DB03 DB04 DC01 DC02 DC03 DD02 DD03 DE01 DF01 EA01 EA02 EA03 EB01 EB02 EB03 EB04 EC01 EC02 EC03 EC04 ED01 ED02 ED03 EE01 EE02 EE03 EE04 EF01 EF02 EF03 EF04 EG01 EG02 EG03 EG04 FA01 FA10 FB01 FB02 FB03 FC01 FC02 FC03 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM27 NN26 NN29  ──────────────────────────────────────────────────続 き Continued from the front page F term (reference) EE03 EE04 EF01 EF02 EF03 EF04 EG01 EG02 EG03 EG04 FA01 FA10 FB01 FB02 FB03 FC01 FC02 FC03 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH HH HH HH HH HH HH HH HH HH HH KK07 KK10 MM27 NN26 NN29

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 質量百分率で、SiO2 45〜85
%、Al23 0〜20%、MgO 0〜10%、Ca
O 0〜15%、SrO 0〜15%、BaO0〜15
%、Li2O 0〜2%、Na2O 0〜15%、K2
0〜20%、ZrO2 0〜10%、B23 0〜5
%、TiO2 0〜5%、P25 0.2〜10%の組
成を有し、歪点が520℃以上であることを特徴とする
無機ELディスプレイガラス基板。
1. The composition according to claim 1, wherein the mass percentage is SiO 2 45-85.
%, Al 2 O 3 0~20% , 0~10% MgO, Ca
O 0-15%, SrO 0-15%, BaO 0-15
%, Li 2 O 0~2%, Na 2 O 0~15%, K 2 O
0~20%, ZrO 2 0~10%, B 2 O 3 0~5
%, TiO 2 0 to 5%, P 2 O 5 0.2 to 10%, and a strain point of 520 ° C. or more.
【請求項2】 30〜380℃の温度範囲における熱膨
張係数が50〜100×10-7/℃であることを特徴と
する請求項1記載の無機ELディスプレイ基板。
2. The inorganic EL display substrate according to claim 1, wherein a coefficient of thermal expansion in a temperature range of 30 to 380 ° C. is 50 to 100 × 10 −7 / ° C.
JP2000202820A 2000-07-04 2000-07-04 Glass board for inorganic el display Pending JP2002025762A (en)

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