JP2004022403A - Metal barrier for picture display device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal barrier for a picture display device which has a high performance (high precision/high luminance) since an opening rate is high, and has high insulation reliability and low cost, and furthermore, provide an effective insulation treatment process for that (manufacturing method of the metal barrier for the picture display device). <P>SOLUTION: This is the metal barrier for the picture display device in which an oxide layer having as the main component at least one kind of SiO<SB>2</SB>-P<SB>2</SB>O<SB>5</SB>series, SiO<SB>2</SB>-Li<SB>2</SB>O series, or P<SB>2</SB>O<SB>5</SB>-Al<SB>2</SB>O<SB>3</SB>series is formed on a substrate for the metal partition wall having numerous through holes. In the manufacturing method in which the oxide layer having as the main component at least one kind of SiO<SB>2</SB>-P<SB>2</SB>O<SB>5</SB>series, SiO<SB>2</SB>-Li<SB>2</SB>O series, or P<SB>2</SB>O<SB>5</SB>-Al<SB>2</SB>O<SB>3</SB>series is formed on the substrate for the metal partition wall having numerous through holes, this is the manufacturing method of the metal barrier for the picture display device in which formation of the oxide layer is carried out by a vapor deposition method. <P>COPYRIGHT: (C)2004,JPO

Description

【００２１】
表１の結果より、本発明によるＮｏ．２〜７は絶縁破壊電圧として、５０Ｖ以上が確保されており、この金属隔壁をＰＤＰとＦＥＤのパネルに組立てて駆動させたところ絶縁性に問題なく、表示装置として正常に作動することを確認した。
また、図１に示す断面顕微鏡写真から、金属隔壁用素材表面に、均一な酸化物層が形成されているのが分かる。なお、酸化物層の外側に白く見える砕けたものは、研磨によって砕けたニッケルメッキである。
また、開口率は、絶縁層形成後では、形成前の５５％から５４％へ僅かに低下したが、現行のガラス隔壁使用ＰＤＰと比較して輝度はほぼ同レベルであることが確認できた。
一方、従来方法（特開平３−２０５７３８号に開示される方法）のＮｏ．７では、開口率が５５％から４４％へ大きく低下し、現行のガラス隔壁使用ＰＤＰと比較して輝度が低下してしまうことが確認された。また、Ｎｏ．１は、ＰＤＰの組立て工程における熱サイクルにより、クラックが発生して、正常に駆動しなかった。
【００２２】
以上の結果から、本発明の製造方法を適用すれば、絶縁層の膜厚を片面で５μｍ以下に抑えても十分な絶縁性を得ることができ、開口率も実用上問題ないレベルの画像表示装置用金属隔壁を得ることができた。また、画像表示装置としてＰＤＰに組み込んだ性能面でも従来方式と比較して輝度を確保できることが分かった。
【００２３】
【発明の効果】
本発明によれば、開口率が高く高性能（高精細・高輝度）で、絶縁信頼性が高く、安価な画像表示装置用金属隔壁を提供すること、また、そのための有効な絶縁処理プロセス（画像表示装置用金属隔壁の製造方法）を提供することができた。
【図面の簡単な説明】
【図１】本発明の画像表示用金属隔壁の断面顕微鏡写真である。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a metal partition used for a thin image display device such as a plasma display panel (hereinafter, referred to as PDP) or a field emission display (hereinafter, referred to as FED), and a method of manufacturing the same.
[0002]
[Prior art]
In a thin image display device, for example, a gas discharge type image display device such as a PDP requires an insulating partition as a partition for forming one discharge space and preventing color interference with an adjacent cell. Further, in the FED, an insulating partition which functions as a spacer for keeping a constant distance between the cold cathode and the phosphor is required.
More specifically, for example, a PDP is manufactured using a glass containing lead as a substrate material by a sand blast method.
Also, Japanese Patent Application Laid-Open No. Hei 3-205538, entitled "Metal Core Rib and Method for Producing the Same, and Plasma Display Panel Using the Metal Core Rib" proposes a metal partition having a dielectric containing glass formed on the surface. This publication discloses an insulation treatment method for forming a dielectric containing glass mainly on the surface of a metal partition wall substrate by an electrodeposition method.
In addition, JP-A-2000-3675, JP-A-2000-64027, and JP-A-2001-52615 disclose an insulating treatment for forming an oxide on a metal partition wall substrate by using a vapor phase growth method. Suggest a way.
[0003]
[Problems to be solved by the invention]
However, the conventional technique has the following problems.
First, the method of manufacturing a glass partition wall by sandblasting is not only complicated and costly, but also has a high productivity, and the manufactured glass partition wall itself and the removed glass powder contain a lot of harmful lead. There was a problem that it was not preferable.
In addition, the high performance of PDPs is easily limited by the structure of the partition walls. In particular, in order to achieve high definition and high brightness, it is necessary to reduce the width of the partition walls and increase the aperture ratio. However, there is a problem that it is difficult to reduce the width of the frame.
[0004]
On the other hand, in the electrodeposition technique mainly disclosed in Japanese Patent Application Laid-Open No. Hei 3-205738, the present inventors have studied and found that since the bubbles remain in the insulating layer, the insulating property varies greatly depending on the position. Therefore, it is necessary to increase the film thickness in order to ensure insulation. However, when the film thickness is increased, there is a problem that an aperture ratio is reduced and high definition cannot be achieved.
In addition, in the dipping method or the spray method into a solution in which glass powder is dispersed, which is disclosed as an insulation treatment method other than electrodeposition in the same publication, the film thickness is not uniform, and furthermore, the sintering oxidation method of the metal and the anode At present, PDPs are difficult to control because the oxidation method does not provide sufficient insulation because the film quality is not dense, and the powder electrostatic coating method is too thick to control it to 10 μm or less. In fact, metal partition walls of image display devices such as those described above have not been put to practical use.
[0005]
Next, JP-A-2000-003675, JP-A-2000-064027, and JP-A-2001-052615 disclose an oxide such as Al ₂ O _{3 on a} substrate for a metal partition wall using a vapor phase growth method of 1 μm or more. Has been proposed, but the thermal expansion coefficient of the oxide film is not adjusted to a thermal expansion coefficient close to that of the metal partition walls. In addition, the problem that cracks occur in the oxide film newly occurs, and at present, it has not been put to practical use.
The present invention has been made in view of the above, and provides a metal partition for an image display device having a high aperture ratio, high performance (high definition and high brightness), high insulation reliability, and low cost. An object of the present invention is to provide an effective insulation process (a method of manufacturing a metal partition wall for an image display device) for that purpose.
[0006]
[Means to solve the problem]
As described above, in the specific insulation treatment method of the metal partition described in JP-A-3-205538, JP-A-2000-003675, JP-A-2000-064027, and JP-A-2001-052615, a practical method is used. It is difficult to obtain a metal partition for an image display device.
The present inventors have intensively studied various insulating treatment methods and insulating film components to form an optimal insulating layer on a metal partition for an image display device, and as a result, have a high aperture ratio and insulating properties required for the metal partition. A new oxide composition which does not contain harmful substances such as lead and lead and whose thermal expansion coefficient of the insulating layer can be adjusted to a thermal expansion coefficient close to that of a metal partition, and a method for producing the same have been found, and the present invention has been achieved.
[0007]
That is, the present invention provides at least one of SiO ₂ —P ₂ O ₅ , SiO ₂ —Li ₂ O, and P ₂ O ₅ —Al ₂ O ₃ based on a metal partition wall substrate having a large number of through holes. This is a metal partition wall for an image display device on which an oxide layer as a main component is formed.
Preferably, the SiO ₂ —P ₂ O ₅ -based oxide layer contains 0.3 to 20 mass% of P ₂ O ₅ , and the SiO ₂ —Li ₂ O-based oxide layer includes Li ₂ O of ₅ to 16 mass%. % _{containing, P 2 O 5 -Al 2 O} 3 based oxide layer is a metal partition wall for an image display device containing 8～22Mass% of _Al 2 _{O 3.}
More preferably, it is a metal partition for an image display device in which the thickness of the oxide layer is 0.1 to 5 μm.
Further, the present invention provides a metal partition wall substrate having a large number of through holes, wherein at least one of SiO ₂ —P ₂ O ₅ , SiO ₂ —Li ₂ O, and P ₂ O ₅ —Al ₂ O ₃ is used. In the method for manufacturing a metal partition wall for an image display device by forming an oxide layer as a main component, the formation of the oxide layer is a method for manufacturing a metal partition wall for an image display device formed by a vapor phase growth method.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
An important feature of the present invention resides in that an oxide having an optimized thermal expansion coefficient is formed on a metal partition wall substrate to be a metal partition wall for an image display device.
Hereinafter, the present invention will be described in detail.
In the present invention, a metal partition wall substrate having a large number of through holes is coated with an oxide layer to form a metal partition wall for an image display device. The metal partition wall for an image display device is sandwiched between a front glass plate and a rear glass plate to form an image. Used for display devices.
This metal partition for an image display device undergoes a thermal cycle of about 500 ° C. in a panel assembling process. Therefore, if the thermal expansion difference is large, thermal stress is generated and the panel is damaged, so that the panel cannot function as an image display device. In order to prevent this, it is preferable that the partition has a thermal expansion coefficient similar to that of the front glass and the rear glass.
[0009]
At present, for example, soda lime glass or a high strain point glass having a thermal expansion coefficient (20 to 500 ° C.) of about 8 × 10 ⁻⁶ / ° C. is used for front and back glass of PDP. It is preferable to use a Fe-Ni-based alloy containing Ni in the range of 40 to 52% by mass of the substrate, and the balance substantially consisting of Fe, of which Ni is in the range of 45% to 49% by mass%. Certain Fe-Ni alloys are particularly preferred. These Fe—Ni-based alloys are suitable for a metal partition wall substrate because the thermal expansion coefficient can be approximated to that of the above glass and fine through holes can be easily formed by an etching method.
[0010]
In the present invention, an oxide layer is formed on the surface of the metal partition wall substrate described above.
The vapor phase growth method referred to in the present invention is a source gas obtained by vaporizing a metal or a metal compound using a sputtering method, a vacuum deposition method, an ion plating method, a chemical vapor deposition method (hereinafter referred to as a CVD method), or the like. Is a method for forming a metal oxide layer by colliding a metal oxide layer with a substrate surface.
This method is excellent in assuring insulation because a dense film with few pinholes can be formed, but has a feature that productivity is poor because the film formation rate is low. Therefore, in practical use, it is preferable to apply as thin an oxide film as possible.
In order to reduce the power consumption of the PDP, lowering of the voltage at the time of driving the PDP has recently been promoted. According to a manufacturing method capable of obtaining a dense film, for example, there is no problem in insulation at a film thickness of 1 to 2 μm or less. Due to the increasing number of PDPs, a thin but dense oxide film can be sufficiently used for a PDP, so that the vapor deposition method of the present invention is effective.
[0011]
Further, by using the vapor deposition method used in the present invention, the oxide layer can be densely formed to have an arbitrary thickness. However, an excessively thick oxide layer leads to a decrease in the aperture ratio. Therefore, the film thickness is preferably 5 μm or less from the viewpoint of the aperture ratio.
On the other hand, from the viewpoint of insulating properties, if the thickness is less than 0.1 μm, sufficient insulating properties cannot be obtained. Therefore, in order to satisfy both the aperture ratio and the insulating property, it is sufficient to form an oxide layer having a thickness of 0.1 to 5 μm. It is in the range of 1-2 μm.
[0012]
By the way, as a property of the oxide layer, since the PDP is subjected to a thermal cycle of about 500 ° C. due to a process of assembling the PDP, the thermal expansion coefficient (20 to 500 ° C.) of the metal partition wall substrate is close to 8 × 10 ⁻⁶ / ° C. is preferably a ~10 × 10 -6 ^/ ℃, in the case of oxide having a property of softening, it is desirable that the softening point of 500 ° C. or higher.
If the coefficient of thermal expansion of the oxide layer is out of these ranges, there is a risk that the film may be cracked or peeled off by thermal cycling. Further, when the softening point of the oxide layer is 500 ° C. or lower, the oxide layer may be softened, for example, during assembling of the PDP, and the shape of the film may be changed, so that the film thickness may be reduced.
[0013]
Therefore, in the present invention, in consideration of the fact that the thermal expansion coefficient can be easily adjusted to a value close to that of the metal partition wall and the above-mentioned raw material for vapor phase film formation is relatively easily available, SiO ₂ − is used as the oxide used in the present invention. P ₂ O ₅ system, SiO ₂ —Li ₂ O system, and P ₂ O ₅ —Al ₂ O ₃ system were selected.
These oxides have an advantage that they can be easily adjusted to a desired coefficient of thermal expansion (20 to 500 ° C.) of 6 to 10 × 10 ⁻⁶ / ° C. as compared with the oxide of a single component.
In the present invention, the above-mentioned SiO ₂ —P ₂ O ₅ system, SiO ₂ —Li ₂ O system, and P ₂ O ₅ —Al ₂ O ₃ system are defined as the main components. This means that the content of SiO ₂ —P ₂ O ₅ , SiO ₂ —Li ₂ O, and P ₂ O ₅ —Al ₂ O ₃ is 50% or more. Considering availability and the like, some oxides may be appropriately added.
[0014]
In the present _invention, SiO ₂ in SiO 2 _-P 2 _{O 5} system containing 5～16Mass% of Li ₂ O is in the _{SiO 2, SiO} 2 -Li 2 O system containing 0.3～20Mass% of _P 2 _{O 5} , P ₂ O ₅ —Al ₂ O ₃ system, the thermal expansion coefficient of P ₂ O ₅ containing 8 to 22 mass% of Al ₂ O ₃ is the thermal expansion coefficient of a metal partition wall substrate to be used as a metal partition wall for an image display device. It is preferable in terms of the consistency of the oxide, and it is preferable to use an oxide adjusted to these ranges.
As a composite oxide other than the above, use of a mixture of MgO and SiO ₂ , for example, 2MgO.SiO ₂ (forsterite) or a mixture of MgO and Al ₂ O ₃ , for example, MgO.Al ₂ O ₃ (spinel) Is also possible.
[0015]
It should be noted that as a raw material in the CVD method of the vapor phase growth method of the present invention, metal organic compounds (metal alkoxide, metal acetylacetonate, metal carboxylate, etc.) and metal inorganic compounds (nitrate, chloride) Etc.) can also be used.
In particular, metal alkoxides, which are metal-containing organic substances, are inexpensive, and are therefore advantageous in terms of low-cost processes.
In the present invention, these oxides are formed into an oxide layer, but the oxide layer may be a single layer or a plurality of layers. Note that when a plurality of layers are used, all may be different oxides, but a plurality of layers formed using the same oxide may be stacked.
As is clear from the above description, the present invention does not use a low-melting glass when forming the oxide layer, and thus does not essentially contain harmful lead. Therefore, the present invention has an effect that no environmental problem occurs.
[0016]
【Example】
Hereinafter, the present invention will be described in more detail with reference to Examples.
Spray type which sprays FeCl ₃ aqueous solution from nozzle to use as a substrate of metal partition for 42 inch PDP, using Fe-47mass% Ni alloy with thermal expansion coefficient of 8.0 × 10 ⁻⁶ / ° C. as material for metal partition. A large number of through-holes were formed in a plate member having a predetermined shape by the wet etching method described above to obtain a metal partition wall substrate. The aperture ratio of the processed metal partition wall substrate was 55%.
[0017]
As a vapor phase growth method, a film formation test was performed by three methods of sputtering, ion plating, and thermal CVD. The used raw materials will be described.
In sputtering, various oxide targets were prepared, and the target was sputtered with Ar gas to form a film on the metal partition wall substrate.
In ion plating, a pellet-shaped sample of various oxides is obtained, and a negative voltage is applied to the substrate while dissolving the EB in a crucible, and the vaporized gas of these oxides is ionized. A film was formed on the metal partition wall substrate by attracting the ion gas.
In the thermal CVD, various metal alkoxides and metal acetylacetonates were used as raw materials, and a gas obtained by heating these with a vaporizer and spraying the same with a carrier gas was sprayed on the substrate to form a film on the metal partition wall substrate.
[0018]
Next, as a comparative example, a partition wall was formed by using an insulating treatment method (electrodeposition method) disclosed in Japanese Patent Application Laid-Open No. Hei 3-205738. Using a Bi-B-Si-O-based glass powder having an average particle diameter of 6 μm as a raw material, the substrate is immersed in a solution in which the powder is dispersed, and a voltage is applied to the substrate, whereby the powder is applied to the substrate surface. After deposition to form a film, the film was heated and melted at 630 ° C. in the air to form an oxide layer.
[0019]
The evaluation method will be described.
The thickness of the oxide layer was measured from a scanning electron micrograph of a cross section of a plane portion of the metal partition. One example (No. 4) is shown in FIG.
Regarding the insulating property, the dielectric breakdown voltage was measured in accordance with JIS-C2110 on a flat portion of the metal partition wall having no holes, and calculated as an average value of 10 points. Table 1 shows the results.
[0020]
[Table 1]

[0021]
From the results in Table 1, No. 1 according to the present invention was obtained. Nos. 2 to 7 ensured a dielectric breakdown voltage of 50 V or more. When this metal partition was assembled and driven on a panel of PDP and FED, it was confirmed that there was no problem in the insulation properties and that the display normally operated as a display device. .
Further, it can be seen from the cross-sectional micrograph shown in FIG. 1 that a uniform oxide layer is formed on the surface of the material for metal partition walls. Note that the crushed one that looks white on the outside of the oxide layer is nickel plating crushed by polishing.
Further, the aperture ratio slightly decreased from 55% before formation to 54% after the formation of the insulating layer, but it was confirmed that the luminance was almost the same level as that of the current PDP using glass partition walls.
On the other hand, in the conventional method (the method disclosed in Japanese Patent Application Laid-Open No. Hei 3-205538), No. In No. 7, it was confirmed that the aperture ratio was greatly reduced from 55% to 44%, and the luminance was reduced as compared with the current PDP using glass partition walls. No. In No. 1, cracks occurred due to a thermal cycle in the assembly process of the PDP, and the device did not operate normally.
[0022]
From the above results, when the manufacturing method of the present invention is applied, a sufficient insulating property can be obtained even if the thickness of the insulating layer is suppressed to 5 μm or less on one side, and the image display has a sufficient aperture ratio for practical use. A metal partition for the device was obtained. Also, it was found that the brightness incorporated in the PDP as an image display device could be secured as compared with the conventional system.
[0023]
【The invention's effect】
According to the present invention, it is possible to provide an inexpensive metal partition for an image display device having a high aperture ratio, high performance (high definition and high brightness), high insulation reliability, and an effective insulation process ( Manufacturing method of a metal partition wall for an image display device).
[Brief description of the drawings]
FIG. 1 is a cross-sectional micrograph of a metal partition for image display of the present invention.

Claims (4)

Oxidation mainly containing at least one of SiO ₂ —P ₂ O ₅ , SiO ₂ —Li ₂ O, and P ₂ O ₅ —Al ₂ O ₃ based on a metal partition wall substrate having many through holes. A metal partition wall for an image display device, comprising a material layer. The SiO ₂ —P ₂ O ₅ -based oxide layer contains 0.3 to 20 mass% of P ₂ O ₅ , and the SiO ₂ —Li ₂ O-based oxide layer contains ₅ to 16 mass% of Li ₂ O. _{, P 2 O 5 -Al 2 O} 3 based oxide layer is an image display device for metal barrier wall according to claim 1, characterized in that it contains 8～22Mass% of _Al 2 _{O 3} of. 3. The metal partition according to claim 1, wherein the oxide layer is coated to a thickness of 0.1 to 5 [mu] m. Oxidation mainly containing at least one of SiO ₂ —P ₂ O ₅ , SiO ₂ —Li ₂ O, and P ₂ O ₅ —Al ₂ O ₃ based on a metal partition wall substrate having many through holes. In the method for producing a metal partition for an image display device by forming an object layer, the oxide layer is formed by a vapor phase growth method.

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