JPH05211238A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To manufacture a wiring or an electrode having high quality with high yield by depositing a metallic film onto an insulating film formed onto a substrate or shaping the wiring or the electrode and pressing these deposited metallic film or formed wiring or electrode by the hydrostatic pressure of pressure exceeding normal pressure. CONSTITUTION:A thin film 13 for forming a wiring or an electrode is deposited on an insulating film 12 formed onto a substrate 11. The substrate 11, on which the thin film 13 is deposited, is introduced into the pressured chamber of a standard HIP device, and pressed at the hydrostatic pressure of pressure of 200 mega pascal in an argon atmosphere at 400 deg.C. Consequently, an Al thin film is machined to a wiring regarding the thin film 13 shaped to the substrate 11, to which heat treatment at hydrostatic pressure is executed, and passivated by an SiNx/PSG double film. The whole is heated at a temperature of 450-500 deg.C at normal pressure, and cooled, and the test of stress migration, in which the status of the generation of voids in a wiring layer is investigated, is conducted. Accordingly, the generation of the voids is reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device having highly reliable wiring or electrodes. The present invention also relates to a method for manufacturing a wiring or an electrode that is dense and sufficiently adheres to a base in a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device, a metal film forming a wiring or an electrode is formed on a substrate insulating film under reduced pressure or normal pressure by a method such as a vacuum deposition method, a sputtering method, a CVD method or the like. It is made by depositing. In the semiconductor device, the metal film thus formed on the substrate is patterned into a wiring or electrode pattern, and a passivation film is formed thereon to insulate the wiring or electrode.

[0003]

The metal film thus deposited on the insulating film under normal pressure or reduced pressure may lack the denseness or may not be sufficiently adhered to the underlying insulating film. This is a cause of stress migration and electromigration. In particular, LS
With the high integration of I, the wiring width drawn on the wafer is miniaturized, for example, to about 0.6 to 1.5 μm, and the thickness is also miniaturized, for example, to about 0.5 μm. Alternatively, the denseness of the electrode metal film and the goodness of the adhesion to the underlying insulating film largely affect the yield of the semiconductor device and the reliability of the wiring, and the solution thereof becomes a big problem in manufacturing the semiconductor device. There is. For example, reliability deterioration due to stress migration or electromigration in aluminum wiring of an integrated circuit is an important cause for an aluminum film that is not densely formed, or an aluminum film that does not sufficiently adhere to a base or a passivation film. It is thought that there is, and in the semiconductor device,
Insufficient adhesion in the two-layer structure (polycide structure) of silicide and polycrystalline silicon used as wirings and gate electrodes is considered to be the cause of exfoliation of the silicide in the high temperature annealing process, which is not suitable for manufacturing semiconductor devices. Is a big problem.

A barrier layer of titanium nitride or the like is provided between the aluminum wiring and the silicon substrate in order to prevent an alloying reaction between aluminum and silicon. The barrier property of this barrier layer is improved. To let
Adhesion of silicon and aluminum to the barrier layer must be sufficient, and how to form the metal film densely and how to sufficiently adhere the metal film to the underlying insulating film are required. , Has become an important issue in improving the yield of semiconductor devices and the reliability of wiring. It is an object of the present invention to solve the above-mentioned problems relating to the yield in manufacturing a conventional semiconductor device and the problems relating to the reliability of electrodes and wirings in the semiconductor device.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a semiconductor device having a novel wiring and electrode which are dense and sufficiently adhere to a base or a passivation film. That is, the present invention is characterized in that a metal film is deposited on an insulating film formed on a substrate, and the deposited metal film surface is pressed with a hydrostatic pressure higher than normal pressure to bring the metal film into close contact with the insulating film. According to another aspect of the present invention, a passivation film is formed on a metal film formed on a substrate via an insulating film, and the formed passivation film surface is exposed to a pressure exceeding a normal pressure. A method for manufacturing a semiconductor device is characterized in that hydrostatic pressure is applied to bring the metal film into close contact with the metal film.

In the present invention, the material for forming a metal film is used as a metal film for electrodes and wirings in a semiconductor device, and for example, silicon, aluminum, chromium, copper, platinum, gold, titanium, zirconium, Metals such as molybdenum, tungsten or tantalum or alloys thereof, or silicides of metals such as titanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum, tungsten, iron, cobalt, nickel, platinum or palladium, or two kinds of these. The above combinations are included.

In the present invention, as in the conventional case, the metal film is formed by depositing the metal film on the insulating film formed on the substrate by a usual method. In the present invention, the metal film is deposited. After the deposition, the deposited substrate is pressurized from the surroundings by a hydrostatic pressure that exceeds atmospheric pressure. The hydrostatic pressure, which is related to the heating temperature, is a pressure higher than the normal pressure, preferably a pressure much higher than the normal pressure, and more preferably a pressure in a region near the ultrahigh pressure, for example, 1000 atm (1
00MP) or more.

In the present invention, the hydrostatic pressure is used for pressurization so that the entire substrate on which the metal film is formed is equally pressed so that it is sufficiently adhered to the underlying insulating film of the metal film. This is also for uniform compression of the entire metal film. By doing so, for example, it is possible to form a metal film which is homogeneous, dense and sufficiently adhered to the base without causing deformation of the formed wiring and electrodes. The adhesion of the metal film to the underlying insulating film by the hydrostatic pressure can be performed after the metal film is patterned into a wiring or an electrode pattern. In this case, the entire metal film on which the wiring or the electrode is patterned can be uniformly and sufficiently adhered to the base, and further, damage caused on the surface of the electrode or the wiring pattern during patterning can be recovered. It is preferable because it can be caused.

Also in the present invention, the metal film formed on the substrate via the insulating film by CVD or the like is formed into a wiring or an electrode pattern, and a passivation film, that is, an insulating film is formed thereon. If hydrostatic pressure is applied after forming the passivation film, the passivation film and wiring or electrode pattern can be sufficiently adhered, and further,
It is preferable because the wiring or electrode pattern can be sufficiently adhered to the underlying insulating film.

In the present invention, for example, when a plurality of wiring layers are formed in a semiconductor device, after the plurality of wiring layers are formed, the whole of the wiring layers are pressed under hydrostatic pressure to form the wiring or electrode pattern of each wiring layer. You can make a close contact between them,
Further, the wiring or electrode pattern of each wiring layer can be sufficiently brought into close contact with the base insulating film and the interlayer insulating film. However, each time a metal film or wiring or electrode pattern of one or a plurality of wiring layers is formed, or every time an insulating film formed on the pattern of the metal film or wiring is formed,
Pressurization by hydrostatic pressure can also be performed. In any of these cases, sufficient adhesion between the metal film of the wiring layer, the wiring or the electrode pattern and the underlying insulating film or interlayer insulating film can be achieved.

In the present invention, the term "passivation film" means an insulating film in a broad sense including an interlayer insulating film, in addition to a film formed by a passivation technique for removing various external factors affecting a semiconductor device. .. Therefore, in the present invention, as the passivation film, various protective films for conventionally used semiconductor devices, for example, resin-encapsulated resin films, are used to inactivate the semiconductor device against water, ions and other contaminants. Various insulating films and interlayer insulating films used, such as SiO ₂ , PSG (P ₂ O ₅ · S)
iO ₂ ), BPSG (B ₂ O ₃ · P ₂ O ₅ · SiO ₂ ), PS
G / SiO ₂ , silicon nitride film (SiN _x ), SiN _x / PS
Known insulating films such as G and silicon oxynitride film (SiO _x N _y ) are used.

In the present invention, the hydrostatic pressurization is performed by disposing a substrate having a metal film, an electrode pattern, a wiring pattern or a semiconductor device formed in a gas or a liquid as a pressure medium, or a known device such as a plunger or a piston. By the means of
The gas or liquid of the pressure medium is pressurized to increase the pressure of the gas or liquid of the pressure medium to a predetermined pressure. At this time, when heating is performed, it is preferable to start the pressurization first, and during the pressurization, or to pressurize to a predetermined pressure before heating. In the present invention, as the pressure medium used for pressurization by hydrostatic pressure, for example, a gas such as argon, nitrogen, oxygen or a mixed gas thereof is used up to a pressure range of about 200 MPa. The type of gas of these pressure media can be appropriately selected according to the properties of the material of the metal film or the insulating film.

In the present invention, the hydrostatic pressure used for pressurization is set in relation to the heating temperature. Generally, when the heating temperature is low, the hydrostatic pressure is set high, and when the heating temperature is high, the hydrostatic pressure is set relatively low. For example, according to the result of a high temperature stress migration test in which the temperature of 450 to 500 ° C. is heated for 30 minutes and then allowed to cool, the occurrence state of voids in the wiring is examined. The generation of voids is smaller when the heating temperature is 400 ° C. than when the heating temperature is 200 ° C. when the hydrostatic pressure of the pressure heat treatment is 2000 atm.
Further, when the heating temperature of the pressure heat treatment is 400 ° C., the occurrence of voids is smaller when the hydrostatic pressure is 3000 atm than when the hydrostatic pressure is 2000 atm.

[0014]

According to the present invention, a metal film is deposited on an insulating film formed on a substrate, and the deposited metal film surface is pressed with a hydrostatic pressure higher than normal pressure to bring the metal film into close contact with the insulating film. By applying hydrostatic pressure, the metal film for forming electrodes and wiring deposited on the insulating film formed on the substrate is uniformly and densely formed, and the metal film and the underlying insulating film are large. A high-quality wiring or electrode can be manufactured by bringing them into close contact with each other.

In the present invention, when hydrostatic pressure is applied after forming the deposited metal film on the wiring or electrode pattern, the wiring or electrode pattern formed by applying hydrostatic pressure is Like the above, the damage of the surface of the wiring or electrode pattern that occurred during pattern formation is recovered, and the wiring or electrode pattern is sufficiently adhered to the underlying insulating film, resulting in high reliability. Therefore, high quality electrodes and wirings can be manufactured with a high yield.

Further, in the present invention, a passivation film, for example, an insulating film is formed on a wiring or an electrode pattern formed on the substrate via an insulating film, and the entire substrate provided with this passivation film is subjected to normal pressure. Since the hydrostatic pressure exceeding the pressure is applied, the exposed insulating film and the metal film are uniformly pressed by the hydrostatic pressure and are uniformly compressed and densified. Further, the damages on the surface of the pattern generated during the pattern formation can be recovered by the application of hydrostatic pressure, so that the yield can be stabilized. Furthermore, by applying hydrostatic pressure, the tensile stress in each film is reduced, and the films can be sufficiently adhered,
A semiconductor device having high reliability and high quality can be manufactured with a high yield.

[0017]

EXAMPLES Examples of embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to the contents of the following examples and explanations. 1A and 1B are partial schematic cross-sectional views showing an outline of a step of forming a dense wiring or an electrode, which is one embodiment of the method for manufacturing a semiconductor device of the present invention. b) is shown in FIG.
Another example of the method for manufacturing a semiconductor device of the present invention different from the example shown in FIG. 5, and a partial schematic cross-sectional view showing an outline of formation of a contact portion in a case including a titanium nitride (TiN) barrier layer. It is a figure. FIG. 3 is a partial schematic cross-sectional view showing another example of the method for manufacturing a semiconductor device of the present invention, which is different from the examples shown in FIGS. .. FIG. 4 is an embodiment of a method of manufacturing a semiconductor device of the present invention different from the embodiments shown in FIGS. 1 to 3, and is a partial schematic cross-sectional view showing an outline of a process of forming a dense wiring or electrode. FIG. 5 is an embodiment of a method for manufacturing a semiconductor device of the present invention, which is different from the embodiments shown in FIGS. 1 to 4, and is polycide having a two-layer structure of tungsten silicide and polycrystalline silicon. It is a partial schematic cross section which shows the outline of the formation process about wiring. Figure 6
FIG. 6 is a partial schematic cross-sectional view showing an outline of a process for forming an Al multilayer wiring, which is an embodiment of the method of manufacturing a semiconductor device of the present invention different from the embodiments shown in FIGS. Figure 7
1 is an embodiment of a method of manufacturing a semiconductor device of the present invention, which is different from the embodiments shown in FIGS. 1 to 6, and is a partial schematic diagram showing the outline of an Al wiring formed with PSG and a silicon nitride insulating film. FIG.

Example 1. In the embodiment shown in FIG.
A thin film 1 for forming wiring or electrodes is formed on an insulating film 12 formed on a substrate 11 by a standard integrated circuit manufacturing method.
3 is deposited on the substrate 11 on which the thin film 13 is deposited by standard HIP (Hot isostatic pressi).
ng) into the pressurization chamber (not shown) of the device, 40
200MPa (MP
It was pressurized with the hydrostatic pressure 14 of the pressure of a). Thus, the thin film 13 formed on the substrate 11 that has been subjected to the heat treatment under hydrostatic pressure.
Is processed into a wiring with an Al thin film by a standard method, and then S
After passivation with the iN _x / PSG bilayer film, under normal pressure, heat at a temperature of 450 to 500 ° C. for 30 minutes, then allow to cool, and perform a high temperature stress migration test to examine the occurrence of voids in the wiring layer. As a result, the occurrence of voids was small.

Example 2. In the embodiment shown in FIG.
The p-type Si substrate 21 is manufactured by a standard integrated circuit manufacturing method.
Then, the n-type impurity region 22 was formed, and the TiSi ₂ layer 23 was selectively formed on the surface of the impurity region by the solid phase reaction of titanium (Ti) and silicon (Si). Next, on the p-type Si substrate 21 including the n-type impurity region 22,
CVD of insulating film 24 of phosphosilicate glass (PSG)
Then, the contact hole 25 was formed by photoetching. Next, a TiN film 26 as a barrier layer was deposited on the insulating film 24 including the contact holes by a reactive sputtering method using Ti as a target (FIG. 2).
(See (a)). Next, the substrate on which the barrier layer 26 was deposited was subjected to a pressure heat treatment for 1 hour under a hydrostatic pressure of 200 MPa in a nitrogen gas atmosphere at 300 ° C. using a HIP device. After the pressure and heat treatment, an aluminum (Al) wiring pattern 27 was formed on the surface of the barrier layer 26 by a standard method (see FIG. 2B). After forming the aluminum wiring pattern 27, heat treatment is performed at 500 ° C. for 30 minutes under normal pressure, and the contact resistance between the Al wiring 27 and the n-type layer 22 or the n− between the n-type layer 22 and the p-type Si substrate 21. When the reverse leakage current of the p-junction was evaluated, all were below the required level. For comparison with a sample having a barrier layer pressurized by high-pressure hydrostatic pressure, in a sample not subjected to pressure treatment by high-pressure hydrostatic pressure,
The reverse leakage current of the n-p junction increased, and a defect occurred.

Example 3. In the embodiment shown in FIG.
A first insulating film 32 made of PSG is first formed on the Si substrate 31 by a standard integrated circuit manufacturing method, then a first Al wiring pattern 33 is formed, and then A is formed.
A second insulating film 34 is formed on the upper surface of the first insulating film including the l wiring pattern. A through hole 36 is formed in the formed second insulating film 34 so that the tip of the opening reaches the first Al wiring pattern 33, and the upper surface of the insulating film 34 in which the through hole 36 is formed. Through hole 3
Al metal film 3 for forming the second Al wiring including the portion 6
5 is formed. The first Al wiring pattern 33 and the Al metal film for forming the second Al wiring filled in the through hole 36 are in contact with each other at the interface 37 (FIG. 3A).
reference). In this example, after the second Al wiring forming metal film 35 is formed, a Si substrate on which a second Al wiring pattern forming metal film is formed using a HIP device (not shown). No. 31 was heated under pressure to 300 ° C. in an argon atmosphere under a hydrostatic pressure of 100 MPa. The metal film 35 for forming the second Al wiring pattern, which has been subjected to the pressurizing and heating treatment, is shown in FIG.
As shown in (b), the second Al wiring pattern 35 '
To form a double-layered wiring by depositing a third insulating film 38 thereon. In this example, the interface between the first Al wiring and the second Al wiring at the bottom of the through hole 36 is destroyed by receiving high-pressure hydrostatic pressure of 100 MPa and disappears due to crystal grain growth. The resistance to stress migration and electromigration was improved. Also,
Since the denseness of the Al wiring film was improved, the migration resistance of the wiring was also improved. 2 and 3, Al was used as the wiring material, but Al--Si and Al--Si
-Al-based alloys such as Cu can be used.

Example 4. In the embodiment shown in FIG.
The insulating film 42 is formed on the upper surface of the substrate 41 and the wiring or the electrode pattern 43 is formed on the upper surface of the insulating film 42 by a standard integrated circuit manufacturing method (see FIG. 4). When the wiring or electrode pattern 43 is formed, a HIP device (not shown) is used to perform a pressure heat treatment with a hydrostatic pressure 44 of 200 MPa in an argon atmosphere heated to 400 ° C., and then a standard heat treatment is performed. The pressure-heated wiring or electrode pattern (not shown) was covered with a passivation film (not shown) by any method. The wiring or electrode pattern thus formed on the substrate 41 is heated to a temperature of 450 to 500 ° C. under normal pressure for 30 minutes and then allowed to cool to examine the occurrence of voids in the wiring or electrode film. As a result of the migration test, generation of voids was small in the wiring and electrode film of this example.

Example 5. In the embodiment shown in FIG.
A phosphorous silicate glass (PSG) insulating film 52 is formed on the upper surface of the Si substrate 51 by a standard integrated circuit manufacturing method.
It was deposited by the VD method. Polycrystalline silicon 53 for wiring formation is formed on the upper surface of the PSG insulating film by the CVD method,
Similarly, a tungsten silicide 54 for forming a wiring is formed by sputtering and patterned to form a polycide wiring (see FIG. 5). Next, using a HIP device, the Si substrate 51 on which the polycide wiring is formed,
Pressure heating treatment was performed for 1 hour in an argon atmosphere heated at 300 ° C. under a hydrostatic pressure of 200 MPa. afterwards,
Heat treatment was performed at 900 ° C. for 30 minutes under normal pressure, and then passivation (not shown) was performed using an insulating film such as PSN, BPSG, SiO ₂ , SiON, Si ₃ N ₄ film or other SiN _x film. The polycide wiring formed in this example did not peel during the heat treatment at 900 ° C. even in a pattern having a large area. However, in the polycide wiring according to the conventional method in which the pressure and heat treatment by the high-pressure hydrostatic pressure is not performed, peeling occurs in a pattern of a large area.

Example 6. In the embodiment shown in FIG.
A first insulating film 62 made of PSG is first formed on the Si substrate 61 by a standard integrated circuit manufacturing method, and then a first Al wiring pattern 63 is formed on the first insulating film 62. Then, a second insulating film 64 including the Al wiring pattern is formed on the upper surface of the first insulating film. Through holes 6 are formed in the formed second insulating film 64 so that the tip of the opening reaches the first Al wiring pattern 63.
6 is formed, and an Al metal film 65 for forming a second Al wiring is formed on the upper surface of the insulating film 64 including the through holes 66. First Al wiring pattern 63 and through hole 66
Is in contact with the second Al wiring filled in the interface 67 at the interface 67 (see FIG. 6A). In this example, when the second Al wiring pattern 65 is formed, the HIP device (not shown) is used to form the Si substrate 61 on which the metal film for forming the second Al wiring pattern is formed.
200M under argon atmosphere while heating to 300 ℃
Pressurized heat treatment was performed with a hydrostatic pressure of Pa. Figure 6 (b)
As shown in (1), the interface 67 existing between the first Al wiring 63 and the second Al wiring 65 could be eliminated by crystal grain growth. After that, PSG, BPSG,
An insulating film such as SiO ₂ , SiON or SiN _x was used for passivation (not shown). In the conventional method, the interface 67 thus formed at the contact portion between the first Al wiring 63 and the second Al wiring 65 may remain without disappearing, and stress migration in the through hole portion or Although it was a cause of electromigration, in the case of this example, the migration resistance at the through hole portion was improved by the disappearance of the interface 67. In addition, since the wiring is densified and the surface is stabilized, the migration resistance of the wiring is also improved.

Example 7. In the embodiment shown in FIG. 7, a silicon oxide film 72 as an insulating film is formed on a silicon substrate 71 by a standard integrated circuit manufacturing method by a CVD method.
On the aluminum wiring pattern 73
Formed. C on the aluminum wiring pattern 73
The PSG film 7 is formed as a passivation film by the VD method.
4 was deposited. The silicon substrate 71 on which the PSG film 74 of the passivation film was deposited was subjected to a pressure heat treatment at 400 ° C. for 1 hour while applying a hydrostatic pressure of 200 MPa using argon gas as a pressure medium. Then, a silicon nitride (SiN _x ) film, which is also a passivation film, is formed on the PSG film 74 that has been subjected to the pressure and heat treatment.
The film 75 was deposited by plasma CVD. Then 475
Heat treatment was carried out at normal temperature for 30 minutes at 0 ° C. to evaluate the influence of void migration due to stress migration. In the aluminum wiring of this example, the occurrence of voids was extremely small, and a highly reliable wiring could be manufactured. On the other hand, in the aluminum wiring manufactured by the conventional method, voids due to stress migration remarkably occurred. Although aluminum wiring is used in this embodiment, an Al-Si alloy or Al-Si is used.
It is also possible to use an aluminum alloy such as a Cu alloy. Moreover, although phosphosilicate glass (PSG) and silicon nitride (SiN _x ) are used as the insulating material of the passivation film, BPSG, SiO ₂ , SiON, or the like can be used.

Although Example 7 will be described below with reference to more detailed examples, Example 7 is not limited to the following examples and explanations. 0.5 thickness on Si substrate
A SiO ₂ insulating film having a thickness of 0.5 μm is formed by a CVD method, and Al having a thickness of 0.5 μm is formed on the insulating film by a vacuum deposition method.
A wiring layer was formed and patterned to form an Al wiring. When this Al wiring was formed, a PSG film having a thickness of 0.3 μm was deposited on the entire surface by vapor phase epitaxy.
The substrate on which the PSG film was formed was then subjected to high-pressure heat treatment with a high-pressure heat treatment device (HIP device). The conditions for the high-pressure heat treatment are a pressure of 2000 atm (200 MPa)
The heating temperature was 400 ° C., and the heating time was 1 hour. In this example, the length of each Al wiring is 70 μm.
and the wiring width is 1.05 μm, 1.4 μm, 2.1.
There are four types, μm and 4.2 μm, and each wiring width is formed for 9 lines. After the high-pressure heat treatment, a silicon nitride (SiN _x ) film was deposited by plasma vapor deposition and a stress migration test was conducted. The test is 450 ℃, 50
Anneal for 30 minutes at a temperature of 0 ° C. and 550 ° C. under a nitrogen atmosphere. As a result, large and small voids did not occur at all regardless of the wiring width and the annealing temperature.

Example 8. Regarding the example shown in Example 7, by the CVD method on the aluminum wiring pattern 73,
The same process was performed until the PSG film 74 of the passivation film was deposited. However, in this example, unlike Example 7, the silicon nitride (SiN _{x of the} passivation film was immediately formed on the deposited PSG film 74. ) The film was deposited by plasma CVD. The silicon nitride (Si
Once the N _x ) film has been deposited, the HIP
200M using argon gas as pressure medium
While applying a hydrostatic pressure of Pa, pressure heating treatment was performed at 400 ° C. for 1 hour. Also in this example, after pressure heat treatment, 4
Heat treatment was performed at 75 ° C. for 30 minutes under normal pressure to evaluate the influence of void migration due to stress migration. Also in the aluminum wiring of this example, void generation was significantly less than in the conventional example of Example 7, and a highly reliable wiring could be manufactured. However, the occurrence of voids increased slightly compared to the aluminum wiring of Example 7.

[0027]

According to the present invention, a metal film is deposited on an insulating film formed on a substrate, or a wiring or an electrode is formed, and the deposited metal film or the formed wiring or electrode exceeds a normal pressure. Since the hydrostatic pressure is applied, high-quality wiring or electrodes can be manufactured with a high yield as compared with wirings or electrodes of conventional semiconductor devices. Further, the present invention is
A passivation film, for example, an insulating film is formed on the electrode pattern or wiring pattern formed on the substrate via an insulating film, and the entire substrate provided with this passivation film is
Since the pressure is applied by hydrostatic pressure exceeding the normal pressure, the wiring or electrode of the semiconductor device of the present invention has excellent denseness and adhesion, and is highly reliable, as compared with the wiring or electrode of the conventional semiconductor device. It is of high quality. As described above, according to the present invention, as compared with the conventional method for manufacturing a semiconductor device, it is possible to improve the denseness and adhesion of the metal film for wiring or electrodes, and to provide high-quality electrodes and wiring. The semiconductor device can be manufactured at a relatively low cost.

[Brief description of drawings]

FIG. 1 is a partial schematic cross-sectional view showing one example of a method for manufacturing a semiconductor device of the present invention, showing an outline of a step of forming a dense wiring or electrode.

FIG. 2 is an example of a method of manufacturing a semiconductor device of the present invention, which is different from the example shown in FIG.
N) A partial schematic cross-sectional view showing an outline of formation of a contact portion in a case including a barrier layer.

FIG. 3 is a partial schematic cross-sectional view showing another example of the method for manufacturing a semiconductor device of the present invention different from the examples shown in FIGS. 1 and 2, and showing an outline of Al multilayer wiring formation.

FIG. 4 is a partial schematic cross-sectional view showing an example of a method for manufacturing a semiconductor device of the present invention different from the examples shown in FIGS. Is.

5 is an embodiment of a method of manufacturing a semiconductor device of the present invention, which is different from the embodiments shown in FIGS. 1 to 4, in which a polycide wiring having a two-layer structure of tungsten silicide and polycrystalline silicon is formed. It is a partial schematic cross section which shows an outline.

FIG. 6 is a partial schematic cross-sectional view showing another example of the method of manufacturing a semiconductor device of the present invention different from the examples shown in FIGS.

FIG. 7 is another embodiment of the method of manufacturing a semiconductor device of the present invention different from the embodiments shown in FIGS. 1 to 6, and is a portion showing an outline of an Al wiring formed with PSG and a silicon nitride insulating film. It is a schematic sectional drawing.

[Explanation of symbols]

11, 21, 31, 41, 51, 61, 71 Substrate 12, 24, 32, 34, 42, 52, 62, 64, 7
2 Insulating film 13 Wiring or electrode film 14, 38, 44, 55 Hydrostatic pressure 22 n-type region 23 TiSi ₂ layer 25 Contact hole 26 TiN film 27 Al wiring 33, 63 First Al wiring pattern 35, 65 Second Al Al metal film for forming wiring pattern 35 'Second Al wiring pattern 36 Through hole 37 Interface 38 Third insulating film 43 Wiring or electrode pattern 52, 74 PSG film 53 Polycrystalline silicon for wiring 54 Tungsten silicide for wiring formation 66 Through hole 67 Interface 72 Silicon oxide film of insulating film 73 Aluminum wiring pattern 75 Silicon nitride film

Claims (5)

[Claims] 1. A metal film is deposited on an insulating film formed on a substrate, and the deposited metal film surface is brought into close contact with the insulating film by applying hydrostatic pressure higher than normal pressure. Method of manufacturing semiconductor device. 2. A metal film is deposited on an insulating film formed on a substrate, and the deposited metal film surface is pressurized at a temperature exceeding normal temperature with a hydrostatic pressure exceeding atmospheric pressure to obtain the insulating film. Method for manufacturing a semiconductor device, characterized in that 3. A passivation film is formed on a metal film formed on a substrate via an insulating film, and the formed passivation film surface is pressurized with a hydrostatic pressure higher than normal pressure to form a metal film on the metal film. A method for manufacturing a semiconductor device, which is characterized in that the semiconductor devices are closely attached. 4. A passivation film is formed on a metal film formed on a substrate via an insulating film, and the formed passivation film surface has a hydrostatic pressure exceeding normal pressure at a temperature exceeding normal temperature. The method for manufacturing a semiconductor device, characterized in that 5. The method for manufacturing a semiconductor device according to claim 1, wherein the deposited metal film is formed on a wiring or an electrode pattern.