TWI566259B - Method for firing copper paste - Google Patents
Method for firing copper paste Download PDFInfo
- Publication number
- TWI566259B TWI566259B TW104119155A TW104119155A TWI566259B TW I566259 B TWI566259 B TW I566259B TW 104119155 A TW104119155 A TW 104119155A TW 104119155 A TW104119155 A TW 104119155A TW I566259 B TWI566259 B TW I566259B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- heating step
- gas
- firing
- substrate
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 85
- 229910052802 copper Inorganic materials 0.000 title claims description 85
- 239000010949 copper Substances 0.000 title claims description 85
- 238000010304 firing Methods 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 83
- 239000007789 gas Substances 0.000 claims description 45
- 239000002245 particle Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 36
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 29
- 239000005751 Copper oxide Substances 0.000 claims description 26
- 229910000431 copper oxide Inorganic materials 0.000 claims description 26
- 239000012298 atmosphere Substances 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 14
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 10
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 10
- 229940112669 cuprous oxide Drugs 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 21
- 239000002904 solvent Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002485 combustion reaction Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000567 combustion gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000012461 cellulose resin Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- -1 alcohol compound Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 235000010944 ethyl methyl cellulose Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 229920003087 methylethyl cellulose Polymers 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000009692 water atomization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
- H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/103—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
- B22F3/1007—Atmosphere
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1017—Multiple heating or additional steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/065—Spherical particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/02—Nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/10—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1157—Using means for chemical reduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
本發明係關於一種對塗佈於基板上之銅糊料進行燒成之方法。
導電性糊料係用以於晶片電阻器、晶片電容器、太陽電池等電子零件、以及印刷配線基板、形成有通孔之基板等電子安裝品上形成配線。又，可用於與用以控制顯示器之像素開關之電晶體連接之電極或配線。現狀之導電性糊料大多使用耐氧化性優異之銀糊料，但銀不但昂貴而且有於微間距(fine pitch)配線中容易發生遷移不良之課題，故而業界正研究製作以銅代替銀之銅糊料，對銅糊料進行燒成而獲得低電阻且可靠性優異之配線構造。
於在大氣中對銀糊料進行燒成之情形時，藉由使黏合劑樹脂與大氣反應，可儘量降低燒成後之配線中所殘留之樹脂量，抑制由樹脂殘留所引起之配線電阻之上升。相對於此，銅於含有氧之環境中容易氧化，故而導電性銅糊料必須於惰性氣體中或真空中進行燒成。於該情形時，存在如下問題，即黏合劑樹脂成分因氧不足而殘留於配線中，導致燒結性惡化，配線電阻上升。又，存在如下傾向：即便於惰性氣體中或真空中進行燒成，亦難以適當地抑制銅粒子之氧化，燒成時銅粒子被氧化，配線電阻增加。
作為將昂貴之銀粒子替換為銅粒子而利用廉價之導電性糊料進行燒成之方法，例如專利文獻1中，揭示有於大氣中以樹脂發生分解、消失之溫度以上之溫度進行加熱，一面將此時所形成之氧化銅粉
末還原成銅一面進行燒結之方法。專利文獻2中，揭示有於非氧化性環境中實施脫黏合劑步驟，並於氧化環境中一面降溫一面將銅氧化，進而進行還原而製作燒結體之方法。專利文獻3中，揭示有以超過氧化開始溫度之溫度進行氧化處理，並以還原開始溫度以上之溫度進行還原處理之方法。專利文獻4中，揭示有以未達150℃之溫度加以乾燥，其後進行加壓、加熱、還原處理步驟之方法。
[專利文獻1]日本專利特開平7-45931號公報
[專利文獻2]日本專利特開2002-43747號公報
[專利文獻3]日本專利特開2009-231755號公報
[專利文獻4]日本專利特開2012-204466號公報
然而，若為上述先前之方法，則藉由銅糊料之燒成將銅粒子燒結而緻密化之程度並不充分，無法獲得低電阻率之銅配線。因此，尋求一種將銅粒子之燒結性進一步提高之燒成方法。
本發明鑒於此種狀況，目的在於提供一種為形成電阻率降低之銅配線而提高銅粒子之燒結性之銅糊料之燒成方法。
本發明者等人發現，藉由對塗佈有銅糊料之基板應用於特定之氧化性氣體環境中進行加熱之第一加熱步驟、及於特定之還原性氣體環境中進行加熱之第二加熱步驟，可於形成包含銅氧化物之緻密之氧化燒結體後進行還原形成緻密之銅燒結體，而降低電阻率，從而完成本發明。具體而言，本發明提供如下者。
(1)一種銅糊料之燒成方法，其包含：塗佈步驟，於基板上塗佈
銅糊料；第一加熱步驟，於上述塗佈步驟之後，在以體積比計含有500ppm以上且2000ppm以下之氧化性氣體之氮氣環境中加熱上述基板，而對上述銅糊料中之銅粒子進行氧化燒結；及第二加熱步驟，於上述第一加熱步驟之後，在以體積比計含有1%以上之還原性氣體之氮氣環境中加熱上述基板，而將上述進行氧化燒結而成之銅氧化物還原。
(2)如上述(1)記載之燒成方法，其中上述第一加熱步驟係於350℃以上且500℃以下進行。
(3)如上述(1)或(2)記載之燒成方法，其中上述第二加熱步驟係於400℃以上且550℃以下進行。
(4)如上述(1)至(3)中任一項記載之燒成方法，其中上述第一及第二加熱步驟係藉由在燒成爐內連續地流入氣體而維持上述氣體環境。
(5)如上述(4)記載之燒成方法，其中上述連續地流入之氣體之流量係相對於燒成爐之容積1×10-6m3為每分鐘0.05升以上且0.5升以下。
(6)如上述(1)至(5)中任一項記載之燒成方法，其中藉由上述第一加熱步驟所形成之銅粒子之氧化物包含氧化亞銅及氧化銅，且以上述氧化亞銅含量多於上述氧化銅之方式加熱。
(7)一種燒結構造體，其係藉由如上述(1)至(6)中任一項記載之燒成方法而形成者，且具備於上述第一加熱步驟之後藉由氧化時之體積膨脹而使鄰接之粒子間連接而成之組織。
(8)一種燒結構造體，其係藉由如上述(1)至(6)中任一項記載之燒成方法而形成者，且具備於上述第二加熱步驟中氧化亞銅及氧化銅被還原而銅粒子連結而成之組織。
根據本發明，可提供一種將塗佈於基板上之銅糊料之銅粒子緻密地燒結之燒成方法，故而作為基板上之銅配線可降低電阻率。
圖1係關於實施例1表示第一加熱步驟後之試驗體之剖面組織之圖。
圖2係關於實施例1表示第二加熱步驟後之試驗體之剖面組織之圖。
以下，對本發明之實施形態進行說明。本發明並不受該等記載限定。
本發明係一種銅糊料之燒成方法，其包含：塗佈步驟，於基板上塗佈銅糊料；第一加熱步驟，於以體積比計含有500ppm以上且2000ppm以下之氧化性氣體之氮氣或惰性氣體環境中加熱上述經塗佈之基板，而對上述銅糊料中之銅粒子進行氧化燒結；及第二加熱步驟，於上述第一加熱步驟之後，在以體積比計含有1%以上之還原氣體之氮氣或惰性氣體環境中加熱上述基板，而將上述進行氧化燒結而成之銅氧化物還原。
本發明之燒成方法適用於用以形成銅配線之基板。作為該基板，可列舉搭載電子安裝品之基板、印刷配線基板、具有通孔之基板等。作為基板材料，可使用矽基板、矽酸玻璃、氧化鋁、石英等氧化物基板、矽氮化物、鋁氮化物等氮化物基板、矽碳化物、鈦碳化物等碳化物基板、樹脂基板等。
銅糊料係混合銅粒子、黏合劑樹脂、及溶劑等而製備。
銅糊料中所含之銅粒子係將粒子中之氧濃度設為0.05質量%以上且2.0質量%以下。更佳為只要上限濃度為1.0質量%以下即可。若氧濃度超過2.0質量%，則金屬粒子之氧化程度變得明顯，銅糊料中發生
凝聚之傾向變強，印刷性惡化。又，即便藉由其後之燒成亦未能將氧化金屬充分還原，而燒成後之配線電阻增加。另一方面，雖然氧濃度較理想為儘可能地低，但為將藉由霧化法等所製作之金屬粒子中之氧濃度設為未達0.05質量%，必需在還原氣體中進行處理，故而成本變高而欠佳。
粒子中含有之銅以外之金屬元素之總量濃度抑制為1.0質量%以下、更佳為抑制為0.8質量%以下。
銅粒子較佳為藉由氣體霧化法或水霧化法等方法所製造之粒子。只要以粒子之最大直徑(dmax)與最小直徑(dmin)之比定義之縱橫比(dmax/dmin)之平均值為1.0以上且小於2.2即可，較佳為1.0以上且2.0以下。於銅粒子之平均縱橫比超過2.2之情形時，成為粒子形狀扁平之薄片狀或針狀粒子，於網版印刷時發生孔堵塞。又，印刷後之配線中之銅粒子之填充率惡化，誘發配線形狀之下垂，並且因空隙率增加而導致燒結性惡化，使燒成後之配線電阻上升。
導電性糊料所含有之有機媒劑中之黏合劑樹脂之質量%較佳為大於0.05%且小於17.0%。黏合劑樹脂只要為藉由燒成而分解之樹脂即可。例如，有甲基纖維素、乙基纖維素、羧甲基纖維素等纖維素樹脂、丙烯酸系樹脂、丁醛樹脂、醇酸樹脂、環氧樹脂、酚系樹脂等。該等之中，使用存在與燒成環境中所含之微量氧或微量一氧化碳反應而自糊料中容易地消失之傾向之纖維素系樹脂即可。進而較佳為，於纖維素系樹脂中使用乙基纖維素即可。
導電性糊料所含有之溶劑只要為具有適當之沸點、蒸氣壓、黏性者，則並無特別限制。例如，可列舉：烴系溶劑、氯化烴系溶劑、環狀醚系溶劑、醯胺系溶劑、亞碸系溶劑、酮系溶劑、醇系化合物、
多元醇之酯系溶劑、多元醇之醚系溶劑、萜烯系溶劑、及該等之混合物。該等之中，較佳為使用沸點為200℃附近之TEXANOL、丁基卡必醇、丁基卡必醇乙酸酯、松脂醇。
將黏合劑樹脂與溶劑混合，進而添加銅粒子，使用行星式混合機等裝置進行混練。又，亦可添加相對於銅粒子之質量為10%以下之質量比之玻璃料。進而，視需要亦可採用使用三輥研磨機提高粒子之分散性之方法。
將該導電性糊料使用網版印刷法等方法印刷於基板上，而製作配線形狀。其後，於氣體環境中進行燒成，使銅粒子燒結，而製成配線。
於第一加熱步驟中，在含有氧化性氣體之氮氣環境中對塗佈有銅糊料之上述基板進行加熱。該第一加熱步驟係藉由該加熱進行溶劑之蒸發、樹脂之燃燒消失、及銅粒子之氧化燒結之製程。作為上述氧化性氣體，可使用氧，其濃度較佳為以體積比計為500ppm以上且2000ppm以下。若氧化性氣體之濃度未達500ppm，則未充分進行樹脂之燃燒，樹脂成分殘存，使燒結性惡化。若氧化性氣體之濃度超過2000ppm，則僅於銅糊料之表面附近急速地產生反應，形成緻密之燒結覆膜層，阻礙內部之反應。為使糊料之整體平衡良好地進行樹脂之燃燒消失與銅粒子之氧化燒結，較佳為500ppm以上且2000ppm以下之氧濃度。
加熱溫度較佳為350℃以上且500℃以下。若未達350℃，則樹脂殘存，若超過500℃，則形成被覆層，阻礙內部之反應。
第二加熱步驟係如下製程，即於含有還原性氣體之氮氣環境中
對第一加熱步驟中所形成之包含銅氧化物之燒結體加熱而進行還原處理，製成包含銅之燒結體。作為上述還原性氣體，可使用氫、一氧化碳、甲酸、氨等。若還原性氣體濃度以體積比計未達1%，則未充分進行燒結體中之銅氧化物之還原，銅氧化物殘存，故而燒成後之銅配線呈現較高之電阻率。因此，還原性氣體濃度較佳為以體積比計為1%以上。
加熱溫度較佳為400℃以上且550℃以下。若未達400℃，則銅氧化物殘存，若超過550℃，則產生燒結體與基板之反應，故而燒成後之銅配線呈現較高之電阻率。
第一及第二各加熱步驟係將塗佈有銅糊料之基板保持於特定之氣體環境進行加熱。例如，可於燒成爐內配置基板進行加熱。燒成爐內之氣體環境可於導入包含特定組成之氣體後以密封狀態進行加熱，或者亦可一面向燒成爐內連續地導入氣體使氣體流動一面進行加熱。導入之氣體可使用將氧氣或還原性氣體以成為特定濃度之方式混合於氮氣所製備者。
於第一加熱步驟中，銅糊料所含有之樹脂燃燒而消失。若此時產生之燃燒氣體滯留於基板周邊，則妨礙燃燒反應，招致樹脂之殘存。又，於第二加熱步驟中，有因所滯留之燃燒氣體而使銅氧化物之還原止於燒結體之表面部之可能性。為排除此種產生之燃燒氣體，較佳為連續地流通環境用氣體而維持氣體環境。其氣體流量較佳為相對於燒成爐之容積1×10-6m3為每分鐘0.05升以上且0.5升以下。若未達每分鐘0.05升，則燃燒反應未充分進行。若超過每分鐘0.5升，則會改變基板溫度，故而加熱溫度之控制變得困難。
藉由第一加熱步驟之氧化，銅糊料中之銅粒子被氧化，以覆蓋
銅粒子表面之方式且以連續體狀之形態形成氧化亞銅(Cu2O)。若銅粒子變化為氧化亞銅，則伴隨約60%之體積膨脹，故而可使鄰接之粒子密接而燒結。因此，即便不於高溫下進行加壓，亦可獲得鄰接之粒子間連接而成之燒結構造體，實現良好之燒結性。其後，上述燒結構造體藉由在第二加熱步驟中進行還原，而成為銅粒子連結而成之緻密之燒結構造體。藉此，可獲得低電阻率之銅配線。作為氧化物之比率，由於若銅粒子之體積之70%以上發生氧化則形成緻密之燒結構造，故而較佳為氧化至該程度。
另一方面，若氧化進而進行而形成氧化銅(CuO)，則產生由於該氧化銅呈現針狀形態而阻礙形成緻密之燒結體之傾向。因此，因過度之氧化導致氧化銅增加之情況欠佳。於第一加熱步驟後之燒結構造體中，粒子中所含之氧化亞銅較佳為多於氧化銅，較佳為於銅氧化物中占65%以上。
以下，例示實施例進一步詳細地對本發明進行說明，但本發明並不受該等實施例限制。
使用長度20mm×20mm、厚度0.6mm之玻璃基板，於其表面將銅糊料藉由網版印刷法印刷為配線形狀，獲得於該基板上塗佈有厚度約20μm之銅糊料之試驗體。將該試驗體配置於燒成爐內後，作為第一加熱步驟，於400℃下進行5分鐘之加熱處理。於該加熱處理中，使用對氧含有比率進行各種改變之氮氣環境與大氣環境作為燒成爐內之氣體環境。其後，作為第二加熱步驟，於500℃下進行5分鐘之加熱處理。於該加熱處理中，使用以體積比計含有5%之氫氣之氮氣環境作為燒成爐內之氣體環境。第一及第二加熱步驟均係一面以相對於燒成爐之容積1×10-6m3為每分鐘0.1升之流量流入特定之氣體一面進行加
熱處理。加熱處理後，冷卻至室溫，自燒成爐取出，進行電阻率之測定、剖面組織之觀察。
藉由直流四探針法求出試驗體之銅配線之電阻率。使於銅配線表面之長度方向上以距離1mm之間隔配置之4根針狀電極(探針)加壓接觸於銅配線，於外側之2探針間流入電流(I)，測定內側之2探針間之電位差(V)，藉由ρ=(V/I)×S×C算出電阻率(ρ)。此處，C係關於銅配線之形狀之修正係數，設為C=4.532。配線之剖面高度(S)係藉由掃描型電子顯微鏡觀察配線剖面而求出。將電阻率為6μΩm以下判定為合格。於表1中表示電阻率之測定結果。
如表1所示，於第一加熱步驟中之氣體環境係氧濃度以體積比計為500ppm以上且2000ppm以下時，獲得具有6μΩcm以下之低電阻率之銅配線。相對於此，若氧濃度未達500ppm或超過2000ppm，則顯示超過6μΩcm之電阻率。若氧濃度過小，則未充分進行樹脂之燃燒，樹脂成分殘存，又，若氧濃度過大，則進行急速之反應，形成被覆層，燒結性降低，故而均難以形成緻密之燒結體，電阻率增大。尤其於如100ppm以下之氧濃度較低之情形或如大氣般氧濃度較高之情形時，顯示超過10μΩcm之高電阻率。
使用於表1之氧濃度1000ppm之氣體環境中經加熱之試驗體，藉由掃描型電子顯微鏡(SEM)觀察試驗體之剖面組織。圖1係表示藉由
第一加熱步驟加熱後之試驗體之剖面組織照片。如圖1所示，藉由上述氣體環境中之氧化處理，形成包含銅氧化物之粒子彼此密接而成之緻密之燒結組織。於銅粒子表面形成包含氧化亞銅之銅氧化物。
圖2係表示藉由第二加熱步驟加熱後之試驗體之剖面組織照片。如圖2所示，圖1之燒結組織被還原，形成銅粒子連結而成之緻密之燒結組織。推測藉由此種燒結組織之形成而獲得低電阻率。
此處，燒結組織包含銅氧化物之情況可藉由利用SEM之組織觀察及使用附屬於SEM所安裝之X射線能量分散分光器進行組成分析之方法而確認。又，包含銅與銅氧化物之比率、銅氧化物中之氧化亞銅與氧化銅之比率亦可藉由進行利用X射線繞射法之結構分析而確認。銅氧化物之比率以體積比計為87%。銅氧化物之中，氧化亞銅之比率為91%。
對第一加熱步驟中之加熱溫度(T1)進行各種改變，除此以外，藉由與實施例1同樣之順序進行第一及第二加熱步驟之加熱處理，製作試驗體，測定電阻率。關於第一加熱步驟之氧濃度，於1000ppm下進行。於表2中表示測定結果。
如表2所示，若第一加熱步驟中之加熱溫度為350℃~500℃，則獲得具有6μΩcm以下之低電阻率之銅配線。相對於此，若第一加熱步驟中之加熱溫度未達350℃或超過500℃，則顯示超過6μΩcm之高電阻率。若加熱溫度過小，則樹脂殘存，又，若加熱溫度過大，則形成被覆層，阻礙內部之反應，燒結性降低，故而均難以形成緻密之燒
結體，銅配線之電阻率增加。
對第二加熱步驟中之加熱溫度(T2)進行各種改變，除此以外，藉由與實施例1同樣之順序進行第一及第二加熱步驟之加熱處理，製作試驗體，測定電阻率。關於第一加熱步驟之氧濃度，於1000ppm下進行。於表3中表示測定結果。
如表3所示，若第二加熱步驟中之加熱溫度為400℃~550℃，則獲得具有6μΩcm以下之低電阻率之銅配線。相對於此，若第二加熱步驟中之加熱溫度未達400℃或超過550℃，則顯示超過6μΩcm之高電阻率。若加熱溫度過小，則銅氧化物殘存，又，若加熱溫度過大，則產生燒結體與基板之反應，故而銅配線之電阻率增加。
對第一及第二加熱步驟中之氣體流量進行各種改變，除此以外，藉由與實施例1同樣之順序進行第一及第二加熱步驟之加熱處理，製作試驗體，測定電阻率。關於第一加熱步驟之氧濃度，於1000ppm下進行。於表4中表示測定結果。
如表4所示，若氣體流量係相對於燒成爐之容積1×10-6m3為每分鐘0.05升~0.5升，則獲得具有6μΩcm以下之低電阻率之銅配線。若
未達每分鐘0.05升或超過每分鐘0.5升，則顯示超過6μΩcm之高電阻率。若氣體流量過小，則燃燒反應未充分進行，又，若氣體流量過大，則溫度變動變大，故而難以形成緻密之燒結組織，銅配線之電阻率增加。
Claims (6)
- 一種銅糊料之燒成方法，其包含：塗佈步驟，於基板上塗佈銅糊料；第一加熱步驟，於上述塗佈步驟之後，在以體積比計含有500ppm以上且2000ppm以下之氧化性氣體之氮氣環境中，於350℃以上且500℃以下加熱上述基板，而對上述銅糊料中之銅粒子進行氧化燒結；及第二加熱步驟，於上述第一加熱步驟之後，在以體積比計含有1%以上之還原性氣體之氮氣環境中，於400℃以上且550℃以下加熱上述基板，而將上述進行氧化燒結而成之銅氧化物還原。
- 如請求項1之燒成方法，其中上述第一及第二加熱步驟係藉由在燒成爐內連續地流入氣體而維持上述氣體環境。
- 如請求項2之燒成方法，其中上述連續地流入之氣體之流量係相對於燒成爐之容積1×10-6m3為每分鐘0.05升以上且0.5升以下。
- 如請求項1至3中任一項之燒成方法，其中藉由上述第一加熱步驟所形成之銅粒子之氧化物包含氧化亞銅及氧化銅，且以上述氧化亞銅含量多於上述氧化銅之方式加熱。
- 一種燒結構造體，其係藉由如請求項1至4中任一項之燒成方法而形成者，具備於上述第二加熱步驟中氧化亞銅及氧化銅被還原而銅粒子連結而成之組織，且電阻率為6μΩm以下。
- 如請求項5之燒結構造體，其係具備於上述第一加熱步驟之後藉由氧化時之體積膨脹而使鄰接之粒子間連接而成之組織。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014123799A JP5766336B1 (ja) | 2014-06-16 | 2014-06-16 | 銅ペーストの焼成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201606807A TW201606807A (zh) | 2016-02-16 |
| TWI566259B true TWI566259B (zh) | 2017-01-11 |
Family
ID=53888008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104119155A TWI566259B (zh) | 2014-06-16 | 2015-06-12 | Method for firing copper paste |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10433427B2 (zh) |
| EP (1) | EP3153254B1 (zh) |
| JP (1) | JP5766336B1 (zh) |
| KR (1) | KR101748112B1 (zh) |
| CN (1) | CN106457390B (zh) |
| TW (1) | TWI566259B (zh) |
| WO (1) | WO2015194366A1 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6130616B1 (ja) * | 2017-02-07 | 2017-05-17 | 大陽日酸株式会社 | 銅微粒子及びその製造方法、並びに焼結体 |
| TWI661087B (zh) * | 2017-07-06 | 2019-06-01 | National Chung-Hsing University | 非鍍式銅及銅合金表面改質的方法 |
| US11798707B2 (en) * | 2018-01-26 | 2023-10-24 | Nisshin Engineering Inc. | Copper microparticles |
| JP7099867B2 (ja) * | 2018-05-16 | 2022-07-12 | 日本化学工業株式会社 | 光焼結型組成物及びそれを用いた導電膜の形成方法 |
| JP7332128B2 (ja) * | 2019-01-10 | 2023-08-23 | 株式会社マテリアル・コンセプト | 電子部品及びその製造方法 |
| CN110202136B (zh) * | 2019-05-21 | 2021-09-03 | 深圳第三代半导体研究院 | 一种低温烧结铜膏及其烧结工艺 |
| CN112444152B (zh) * | 2019-09-03 | 2022-01-11 | 广州力及热管理科技有限公司 | 一种链状铜金属毛细结构及其制作方法 |
| KR20220061160A (ko) * | 2019-09-27 | 2022-05-12 | 가부시키가이샤 마테리알 콘셉토 | 산화구리 페이스트 및 전자 부품의 제조 방법 |
| CN112718435A (zh) * | 2020-12-22 | 2021-04-30 | 深圳市百柔新材料技术有限公司 | 无机导电基板的制备方法 |
| TWI789698B (zh) * | 2021-02-02 | 2023-01-11 | 日商材料概念股份有限公司 | 氧化銅糊料及電子零件之製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1792127A (zh) * | 2003-05-16 | 2006-06-21 | 播磨化成株式会社 | 形成微细铜颗粒烧结产物类的微细形状导电体的方法,以及应用所述方法形成铜微细布线和薄铜膜的方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1249493A (en) * | 1967-11-02 | 1971-10-13 | Glyco Metall Werke | Method and apparatus for sintering a metallic powder onto a metal band |
| US4140817A (en) | 1977-11-04 | 1979-02-20 | Bell Telephone Laboratories, Incorporated | Thick film resistor circuits |
| US4316920A (en) * | 1980-07-03 | 1982-02-23 | Bell Telephone Laboratories, Incorporated | Thick film resistor circuits |
| JPS60167069A (ja) * | 1984-02-09 | 1985-08-30 | Omron Tateisi Electronics Co | 図形認識装置 |
| US4879261A (en) * | 1987-01-13 | 1989-11-07 | E. I. Du Pont De Nemours And Company | Low Dielectric constant compositions |
| JP2788510B2 (ja) * | 1989-10-27 | 1998-08-20 | 第一工業製薬株式会社 | 銅ペースト組成物 |
| US5682018A (en) * | 1991-10-18 | 1997-10-28 | International Business Machines Corporation | Interface regions between metal and ceramic in a metal/ceramic substrate |
| JPH0722737A (ja) * | 1993-06-30 | 1995-01-24 | Sumitomo Metal Ind Ltd | 配線パターンの形成方法 |
| JPH0745931A (ja) | 1993-07-29 | 1995-02-14 | Sumitomo Metal Ind Ltd | 微細配線の形成方法及び該方法に用いられる導体ペースト |
| JP2002043747A (ja) * | 2000-07-28 | 2002-02-08 | Murata Mfg Co Ltd | 多層セラミック基板の製造方法 |
| JP2004164876A (ja) | 2002-11-11 | 2004-06-10 | Asahi Kasei Corp | 金属被膜の製造方法 |
| KR100841665B1 (ko) | 2003-05-16 | 2008-06-26 | 하리마 카세이 가부시키가이샤 | 동 미립자 소결체형의 미세 형상 도전체의 형성 방법, 그방법을 응용한 동미세 배선 및 동박막의 형성 방법 |
| JP4569358B2 (ja) | 2005-04-04 | 2010-10-27 | Ｊｆｅスチール株式会社 | 熱間圧延用鋳造ロール材および熱間圧延用ロール |
| CN101041898A (zh) * | 2006-02-23 | 2007-09-26 | 气体产品与化学公司 | 电子附着辅助的导电体的形成 |
| JP2009231755A (ja) | 2008-03-25 | 2009-10-08 | Hiroshima Univ | 微細配線作製方法 |
| JP5011225B2 (ja) * | 2008-07-09 | 2012-08-29 | ニホンハンダ株式会社 | 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法 |
| JP5544323B2 (ja) * | 2011-03-24 | 2014-07-09 | 富士フイルム株式会社 | 銅配線の形成方法および配線基板の製造方法 |
| JP5768455B2 (ja) * | 2011-04-14 | 2015-08-26 | 日立化成株式会社 | 電極用ペースト組成物及び太陽電池素子 |
| JP2012227183A (ja) * | 2011-04-14 | 2012-11-15 | Hitachi Chem Co Ltd | 電極用ペースト組成物及び太陽電池素子 |
-
2014
- 2014-06-16 JP JP2014123799A patent/JP5766336B1/ja active Active
-
2015
- 2015-06-02 EP EP15810529.6A patent/EP3153254B1/en active Active
- 2015-06-02 KR KR1020177001035A patent/KR101748112B1/ko active IP Right Grant
- 2015-06-02 US US15/319,549 patent/US10433427B2/en active Active
- 2015-06-02 WO PCT/JP2015/065933 patent/WO2015194366A1/ja active Application Filing
- 2015-06-02 CN CN201580032307.2A patent/CN106457390B/zh active Active
- 2015-06-12 TW TW104119155A patent/TWI566259B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1792127A (zh) * | 2003-05-16 | 2006-06-21 | 播磨化成株式会社 | 形成微细铜颗粒烧结产物类的微细形状导电体的方法,以及应用所述方法形成铜微细布线和薄铜膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170010067A (ko) | 2017-01-25 |
| CN106457390A (zh) | 2017-02-22 |
| EP3153254A1 (en) | 2017-04-12 |
| US10433427B2 (en) | 2019-10-01 |
| EP3153254A4 (en) | 2017-07-19 |
| US20170135221A1 (en) | 2017-05-11 |
| JP2016004671A (ja) | 2016-01-12 |
| CN106457390B (zh) | 2018-05-11 |
| WO2015194366A1 (ja) | 2015-12-23 |
| TW201606807A (zh) | 2016-02-16 |
| JP5766336B1 (ja) | 2015-08-19 |
| EP3153254B1 (en) | 2021-01-13 |
| KR101748112B1 (ko) | 2017-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI566259B (zh) | Method for firing copper paste | |
| TWI589203B (zh) | Electronic parts and methods of making the same | |
| JP5492191B2 (ja) | メタライズド基板を製造する方法、メタライズド基板 | |
| JP4807581B2 (ja) | ニッケル粉末、その製造方法、導体ペーストおよびそれを用いた積層セラミック電子部品 | |
| US9780011B2 (en) | Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module | |
| Reboun et al. | Properties of power electronic substrates based on thick printed copper technology | |
| JP3690552B2 (ja) | 金属ペーストの焼成方法 | |
| TW201419308A (zh) | 氣體感測器電極及其製造方法，以及形成電極用的金屬膏 | |
| JP5327442B2 (ja) | ニッケル−レニウム合金粉末及びそれを含有する導体ペースト | |
| JP2008108716A (ja) | 低温焼成用導電性ペースト組成物 | |
| JP5503132B2 (ja) | 抵抗体ペースト及び抵抗器 | |
| JP6851810B2 (ja) | 加熱接合材及び電気電子機器の製造方法 | |
| JP5215914B2 (ja) | 抵抗体膜の製造方法、抵抗体膜、及び抵抗器 | |
| JP6569545B2 (ja) | 厚膜銅電極または配線とその形成方法 | |
| JP2017529699A (ja) | 銅電極を有する太陽電池 | |
| CN106605270A (zh) | 含铜导电浆料和由此制成的电极 | |
| WO2020004624A1 (ja) | 配線基板及びその製造方法、並びに電子部品及びその製造方法 | |
| JP2007234537A (ja) | 導体ペーストおよびセラミック多層基板製造方法 | |
| JP7208619B2 (ja) | 電子部品の製造方法 | |
| TWI842810B (zh) | 電子零件及其製造方法 | |
| JP6393243B2 (ja) | 電子部品およびその製造方法 | |
| TW202035341A (zh) | 電子零件及其製造方法 |