TWI549188B - 半導體磊晶晶圓的製造方法、半導體磊晶晶圓及固體攝影元件的製造方法 - Google Patents

半導體磊晶晶圓的製造方法、半導體磊晶晶圓及固體攝影元件的製造方法 Download PDF

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TWI549188B
TWI549188B TW102141072A TW102141072A TWI549188B TW I549188 B TWI549188 B TW I549188B TW 102141072 A TW102141072 A TW 102141072A TW 102141072 A TW102141072 A TW 102141072A TW I549188 B TWI549188 B TW I549188B
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wafer
semiconductor
epitaxial
atoms
carbon
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TW102141072A
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TW201428854A (zh
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門野武
栗田一成
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勝高股份有限公司
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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TW102141072A 2012-11-13 2013-11-12 半導體磊晶晶圓的製造方法、半導體磊晶晶圓及固體攝影元件的製造方法 TWI549188B (zh)

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JP2012249335A JP6278591B2 (ja) 2012-11-13 2012-11-13 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法

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TW201428854A TW201428854A (zh) 2014-07-16
TWI549188B true TWI549188B (zh) 2016-09-11

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US (3) US20160181313A1 (cg-RX-API-DMAC10.html)
JP (1) JP6278591B2 (cg-RX-API-DMAC10.html)
KR (2) KR101964937B1 (cg-RX-API-DMAC10.html)
CN (1) CN104781918B (cg-RX-API-DMAC10.html)
DE (1) DE112013005407B4 (cg-RX-API-DMAC10.html)
TW (1) TWI549188B (cg-RX-API-DMAC10.html)
WO (1) WO2014076933A1 (cg-RX-API-DMAC10.html)

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KR20150134543A (ko) * 2014-05-22 2015-12-02 삼성전자주식회사 소자 제조용 기판 및 반도체 소자
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP6493104B2 (ja) * 2015-09-03 2019-04-03 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、品質予測方法および品質評価方法
JP6485315B2 (ja) * 2015-10-15 2019-03-20 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
JP6987057B2 (ja) * 2015-12-04 2021-12-22 グローバルウェーハズ カンパニー リミテッドGlobalWafers Co., Ltd. 低酸素含有シリコンを生産するシステム及び方法
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
JP6504082B2 (ja) * 2016-02-29 2019-04-24 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
JP2018098266A (ja) * 2016-12-08 2018-06-21 キヤノン株式会社 光電変換装置、光電変換装置の製造方法およびカメラ
JP6766700B2 (ja) * 2017-03-08 2020-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハおよび固体撮像素子の製造方法
EP3428325B1 (en) * 2017-07-10 2019-09-11 Siltronic AG Semiconductor wafer made of single-crystal silicon and process for the production thereof
JP6787268B2 (ja) * 2017-07-20 2020-11-18 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法
JP6819631B2 (ja) * 2018-02-27 2021-01-27 株式会社Sumco エピタキシャルシリコンウェーハの不純物ゲッタリング能力の評価方法
JP6801682B2 (ja) * 2018-02-27 2020-12-16 株式会社Sumco 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法
JP6874718B2 (ja) * 2018-03-01 2021-05-19 株式会社Sumco 半導体エピタキシャルウェーハの製造方法
JP6988843B2 (ja) * 2019-02-22 2022-01-05 株式会社Sumco 半導体エピタキシャルウェーハ及びその製造方法
US11271079B2 (en) * 2020-01-15 2022-03-08 Globalfoundries U.S. Inc. Wafer with crystalline silicon and trap rich polysilicon layer
JP7259791B2 (ja) * 2020-03-25 2023-04-18 株式会社Sumco シリコンウェーハへのクラスターイオン注入による白傷欠陥低減効果の評価方法及びエピタキシャルシリコンウェーハの製造方法
CN115989562B (zh) * 2020-08-26 2025-08-05 胜高股份有限公司 外延硅晶片及其制造方法以及半导体器件的制造方法
CN113109415B (zh) * 2021-03-26 2024-06-14 南昌大学 一种适用于二次离子质谱分析的多层膜界面位置表征方法
JP7757917B2 (ja) * 2021-11-04 2025-10-22 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
TWI865954B (zh) * 2021-11-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
JP7658332B2 (ja) 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ

Citations (6)

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