TW200903646A - Epitaxial wafer manufacturing method and epitaxial wafer - Google Patents

Epitaxial wafer manufacturing method and epitaxial wafer Download PDF

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TW200903646A
TW200903646A TW097114673A TW97114673A TW200903646A TW 200903646 A TW200903646 A TW 200903646A TW 097114673 A TW097114673 A TW 097114673A TW 97114673 A TW97114673 A TW 97114673A TW 200903646 A TW200903646 A TW 200903646A
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wafer
epitaxial
heat treatment
layer
epitaxial wafer
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TW097114673A
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Chinese (zh)
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Takemine; Magari
Hiroyuki Kobayashi
Takashi Sayama
Shoichi Takamizawa
Kiyoshi Mitani
Toshimi Tobe
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Shinetsu Handotai Kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Physical Vapour Deposition (AREA)
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  • Recrystallisation Techniques (AREA)

Abstract

Provided is an epitaxial wafer manufacturing method wherein a carbon implanted layer is formed by implanting carbon ions, then, heat treatment is performed in an atmosphere containing ammonia or nitrogen by using a rapid heating/cooling (RTA) apparatus, and an epitaxial layer is formed on the heat-treated silicon wafer. By surely performing recovery heat treatment prior to the step of implanting carbon ions to form the carbon ion implanted layer and forming the silicon epitaxial layer on the implanted surface, an epitaxial wafer having high gettering performance can be manufactured at low cost without forming an epitaxial defect on the epitaxial layer.

Description

200903646 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種在單結晶石夕晶圓表面附近具有高 強度吸氣能力之磊晶晶圓的製造方法。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an epitaxial wafer having a high-intensity gettering ability in the vicinity of a surface of a single crystal silicon wafer. [Prior Art]

用以形成半導體元件之單結晶矽晶圓，以往是使用 CZ(切克勞斯基；Czochralski)法或 MCZ(磁場 CZ; Magnetic field CZ)法所成長的單結晶矽晶圓、或是在這些單結晶矽 晶圓的表面形成磊晶層而成的磊晶晶圓、及對單結晶矽晶 圓施加熱處理而成的退火晶圓等。 另一方面，雖然形成半導體元件的製程是在等級 100 以下的超潔淨室内進行，但是無法完全避免來自氣體、水 或半導體製造設備等之不純物對單結晶矽晶圓的污染。若 是在元件活性區域存在這些不純物時，半導體元件的品質 及特性會顯著地劣化。因此，為了將這些不純物吸氣（吸除 (gettering))而從元件活性區域除去，以往是進行本徵吸氣 (Intrinsic Gettering : IG)或非本徵吸氣（Extrinsic Gettering : EG)。而且，亦有在已施行這些處理而成的晶 圓表面，形成蟲晶層之情況。 特別是從製造半導體元件的觀點，因為磊晶晶圓能夠 形成具有與基板晶圓不同電阻率之電性主動層（active layer)，而有設計半導體元件時的自由度增大，又，具有 能夠以任意厚度形成氧或碳（會成為結晶缺陷的原因）的濃 200903646 度低之高純度的單結晶薄膜等許多優點，所以被實用化而 使用於高耐壓半導體元件或雙載子積體電路元件、固體攝 像元件（CCD(電荷柄合裝置；Charge-Coupled Device)攝像 元件）等製品。 形成實用化的磊晶層之方法，能夠使用化學氣相沈積 法（Chemical Vapor Deposition method)，主要是使用以下 4 種源氣體（source gas)。 氫還原法時，源氣體是使用SiCl4、SiHCl3。A single crystal germanium wafer for forming a semiconductor element is conventionally a single crystal germanium wafer grown using a CZ (Czochralski) method or a MCZ (Magnetic Field CZ) method, or An epitaxial wafer in which an epitaxial layer is formed on a surface of a single crystal germanium wafer, and an annealed wafer obtained by applying heat treatment to a single crystal germanium wafer. On the other hand, although the process for forming a semiconductor element is performed in an ultra-clean room of class 100 or less, contamination of a single crystal germanium wafer by impurities such as gas, water, or semiconductor manufacturing equipment cannot be completely avoided. If these impurities are present in the active region of the device, the quality and characteristics of the semiconductor device are significantly deteriorated. Therefore, in order to inhale (mettering) these impurities, they are removed from the element active region, and conventionally, Intrinsic Gettering (IG) or Extrinsic Gettering (EG) is performed. Further, there is also a case where a crystal layer is formed on the surface of the crystal which has been subjected to these treatments. In particular, from the viewpoint of manufacturing a semiconductor element, since the epitaxial wafer can form an active active layer having a resistivity different from that of the substrate wafer, the degree of freedom in designing the semiconductor element is increased, and It has many advantages such as a single crystal film having a high purity of 200,903,646 degrees and a low purity of oxygen and carbon (which are causes of crystal defects), and is used in a high-voltage semiconductor element or a bi-carrier integrated circuit. Products such as components and solid-state imaging devices (CCD (Charge-Coupled Device) imaging devices). As a method of forming a practical epitaxial layer, a chemical vapor deposition method (Chemical Vapor Deposition method) can be used, mainly using the following four source gases. In the hydrogen reduction method, the source gas is SiCl4 or SiHCl3.

SiCl4 +2H2 — Si +4HC1SiCl4 +2H2 — Si +4HC1

SiHCl3 +H2 — Si +3HC1 熱分解法時，源氣體是使用SiH2Cl2、SiH4。In the thermal decomposition method of SiHCl3 + H2 - Si + 3HC1, the source gas is SiH2Cl2 and SiH4.

SiH2Cl2 一 Si +2HC1 SiH4 -> Si +2H2 其中，因為價廉、成長速度快、適合應用於厚膜的磊 晶成長用等，固體攝像元件主要是使用SiHCl3。 但是，使用任一種源氣體來形成遙晶層而成的蟲晶晶 圓，在磊晶層的形成中亦會混入許多不純物，特別是混入 金屬不純物。此種金屬不純物，當將磊晶晶圓應用在固體 攝像元件時，因為無法充分地降低因暗電流所引起的白點 損傷缺陷，而成為特性或產率變差的原因。 認為重金屬不純物的產生源是來自磊晶成長裝置的鐘 罩型反應室内的s U S系組件、來自源氣體的配管。若在源 氣體含有氣系物質時，在磊晶成長時分解而產生 HC1氣 體。該H C1氣體會腐蝕鐘罩型反應室内的S U S系組件，並 200903646 以金屬的氣化物方式被包含在源氣體中。 又 > 在形成遙晶層之前’為了將早結晶梦晶圓表面輕 微地浸蝕掉，亦會有故意導入H C1氣體之情形，其亦會成 為腐#的原因之一。SiH2Cl2 - Si + 2HC1 SiH4 - > Si + 2H2 Among them, solid-state imaging devices mainly use SiHCl3 because they are inexpensive and have a high growth rate and are suitable for use in epitaxial growth of a thick film. However, the crystallite circle formed by using any of the source gases to form the crystal layer, a large amount of impurities, especially metal impurities, may be mixed in the formation of the epitaxial layer. Such a metal impurity is a cause of deterioration in characteristics or yield because the epitaxial wafer is applied to a solid-state image sensor because the white point damage defect caused by the dark current cannot be sufficiently reduced. It is considered that the source of the heavy metal impurities is the s U S system from the bell type reaction chamber of the epitaxial growth apparatus, and the piping from the source gas. When the source gas contains a gas-based substance, it decomposes during epitaxial growth to generate HC1 gas. The H C1 gas corrodes the S U S component in the bell-type reaction chamber, and 200903646 is contained in the source gas as a metal vapor. Also > Before the formation of the crystal layer, in order to lightly etch away the surface of the early crystal dream wafer, there is also a case where the H C1 gas is intentionally introduced, which may become one of the causes of the rot #.

因此，使用磊晶晶圓來形成固體攝像元件時，作為用 以將上述金屬不純物吸氣而除去之吸氣技術，有揭示一種 碳吸氣磊晶晶圓的製造方法（例如，參照日本特開平 6 - 3 3 8 5 0 7號公報），揭示從矽晶圓的一面植入碳離子而形 成碳離子植入區域，並在該表面形成矽磊晶層。而且，為 了提高吸氣能力，有提案揭示一種方法（例如，參照日本特 開平1 1 - 2 5 1 3 2 2號公報），是在矽晶圓的表面植入碳離子及 氮離子後，在其表面形成矽磊晶層之方法；或是有提案揭 示一種方法（例如，參照曰本特開 2 0 0 2 - 1 3 4 5 1 1號公報）， 是在含有氮之矽晶圓的一表面植入碳離子厚，在該表面形 成矽磊晶層之方法。 但是，因為元件製程若是低溫製程時，氧析出困難， 即便植入碳離子亦有吸氣能力差之問題。 又，植入的碳離子的劑量越高，蟲晶製程前的恢復處 理越困難 > 會有產晶層無法成長之情況’又，即便蟲晶層 能夠成長時5亦有容易形成蟲晶缺陷之問題。 【發明内容】 本發明之目的是提供一種磊晶晶圓的製造方法，藉由 先植入碳離子而形成碳離子植入層，並在將矽磊晶層形成 8 200903646 於植入面的製程之前，確實地進行恢復熱處理，來提供一 種製造方法，能夠以低成本來製造出不會在遙晶層形成蠢 晶缺陷*且具備南強度的吸氣能力之蟲晶晶圓。 為了解決上述課題，本發明提供一種磊晶晶圓的製造 方法，是製造磊晶晶圓的方法，其特徵為：先植入碳離子 而形成碳植入層，隨後，使用急速加熱、急速冷卻（RTA) 裝置，並在含氨或氮的環境進行熱處理，然後在進行該熱 處理後的砍晶圓上’形成蟲晶層。 如上述，藉由使用RTA裝置來進行植入碳離子後的結 晶性的恢復熱處理，能夠以短時間進行晶圓的結晶性恢 復，能縮短製程所需要的時間。又，藉由使恢復熱處理的 環境為含有氨或氮之環境，能夠於熱處理製程的時間，將 空穴植入晶圓表面附近，與只有植入碳離子的情況比較， 能夠提高吸氣能力。而且，因為是藉由RTA處理來使晶圓 的結晶性恢復，在晶圓表面形成磊晶層時，能夠作成幾乎 未形成有蠢晶缺陷之晶圓。 又，在本發明的製造方法中，上述熱處理的環境是以 氨濃度為0.5〜3 %、或是氮濃度為100〜lOOOppm之氮化氣 體添加環境為佳。 藉由使氨或氮濃度在上述範圍，在使用RTA裝置進行 熱處理時，能夠一邊有效率地植入空穴，一邊避免在晶圓 中植入會成為異物元素之必要以上的氮氣。 又，在本發明的製造方法中，植入上述碳離子的劑量 以 1x1013~5x1015 atoms/cm2 為佳。 9 200903646 如此，若是lxlO13〜5xl015atoms/cm2的劑量時，藉由 RTA處理便能夠使結晶性恢復，又，能夠促進在晶圓表面 附近析出氧。 又，在本發明的製造方法中，使用急速加熱、急速冷 卻（RTA)裝置之熱處理，以設為在 1 1 00 °C〜矽熔點溫度且 1 0〜60秒的處理時間為佳。 藉由以此種條件進行熱處理，能夠確實地使晶圓的結 晶性恢復，同時能夠作為以短時間使結晶性恢復之熱處理 條件。 又，一種固體攝像裝置的製造方法，是以在依照本發 明的製造方法所製造出來的蟲晶晶圓的蟲晶層上’形成固 體攝像元件為佳。 如此，因為依照本發明的製造方法所製造出來的磊晶 晶圓*在其蟲晶層幾乎未形成蟲晶缺陷’所以形成固體攝 像元件時，能夠產率良好地製造出良好的固體攝像裝置。 又，依照本發明的製造方法所製造出來的磊晶晶圓是 以在蟲晶層未形成蠢晶缺陷者為佳。 如前述，因為依照本發明的製造方法所製造的磊晶晶 圓，其吸氣能力高，同時能夠恢復下層的結晶性，是未形 成蠢晶缺陷之蠢晶晶圓。 如上述說明，在本發明中，當製造磊晶晶圓時，是先 在矽晶圓植入碳離子並形成碳植入層，隨後，使用急速加 熱、急速冷卻（RTA)裝置，並在含氨或氮的環境進行結晶 性的恢復熱處理，然後在進行該熱處理後的矽晶圓上，形 10 200903646 成磊晶層。藉由如此進行，因為具備高強度的吸氣能力， 並能夠確實地進行磊晶製程前的恢復熱處理，所以能夠提 供一種製造方法，能夠以低成本製造出能夠防止在磊晶層 形成磊晶缺陷，且在元件製程中之吸氣能力亦高的磊晶晶 圓。 【實施方式】 以下，具體地說明本發明。 如前述，期待開發一種方法，能夠以低成本來製造出 具備高強度的吸氣能力，且藉由確實地進行磊晶製程前的 恢復熱處理，能夠防止在蟲晶層形成蟲晶缺陷之蟲晶晶圓。 因此，本發明重複專心研究利用碳離子植入後之結晶 性恢復熱處理，是否可提升吸氣能力並同時解決上述課題。 結果，本發明者等構想藉由使用 RTA裝置來急速加 熱、急速冷卻，以短時間進行結晶性的恢復處理，並藉由 在含氨或氮的環境進行熱處理而植入空穴，不會降低吸氣 能力，且能夠賦予高強度的吸氣能力，而完成了本發明。 以下，使用第1圖，更詳細地說明本發明，但是本發 明未限定於此等。 首先，準備單結晶矽晶圓11。使用高電流離子植入機 在該石夕晶圓的任一側的主表面進行碳離子植入，而在梦晶 圓形成碳植入層 1 2。碳離子的劑量可以設為 1 X 1 0 13〜5 X 1 0 15atoms/cm2 ° 藉由設在上述範圍的劑量，即便在植入碳離子後以短 11 200903646 時間進行熱處理，亦能夠謀求晶圓結晶性的恢復。又，為 了促進氧析出，以在上述劑量的範圍為佳。 隨後，進行熱處理用以使因植入碳離子而引起紊亂的 磊晶圓結晶性恢復。熱處理是藉由急速君熱、急速冷卻 (RTA)裝置來進行。該熱處理是在含有氨或氮的環境（氣氛） 進行。 藉由使用 RTA裝置並在如上述含有氨或氮的環境進 行熱處理，能夠謀求在短的熱處理時間内恢復晶圓結晶 性。又，藉由含有氨或氮，在熱處理中能夠在晶圓植入空 穴，藉此，能夠有效率地使氧析出，能夠形成 BMD(表體 微缺陷；BulkMicroDefect)層13。可將重金屬等的不純物 吸氣（吸除）在所形成的BMD層13中。藉由如上述進行， 即便藉由短時間的製程，亦能夠得到具備高強度的吸氣能 力之遙晶晶圓。 在含有氨的環境進行時，氨濃度可以為〇 . 5〜3 %。在含 有氮的環境進行時，氮濃度可以為添加100〜lOOOppm的氮 化氣體而成的環境。 藉由在前述濃度範圍，在植入空穴時，不必增加進入 晶圓中之氮的總量，亦能夠植入充分量的空穴。在此，即 使進一步地藉由在氣添加環境中，以1 〇 〇 p p m以下的微量 氧環境來進行熱處理，亦能夠得到與上述同樣的效果。 作為熱處理條件，其處理溫度可設為 1 1 0 0 °C〜矽熔點 溫度。以11 0 0 ~ 1 2 5 0 °c為特佳。處理速度可設為1 0〜6 0秒。 藉由前述的熱處理條件，能夠確實地使晶圓的結晶性恢 12 200903646 復，同時能夠以短時間進行處理。因而，能夠縮短製程、 能夠謀求降低成本。 雖然熱處理次數一次即充分，但是並未特別限定次 數。重視結晶性的情況，可重複進行2〜3次。 隨後’在已植入碳離子的面’形成蟲晶層14。遙晶層 1 4的形成，能夠使用通常的條件。 例如，使用H2作為載氣時，能夠藉由將SiHCl3等的 源氣體導入處理室内，並在已配置在基座上之上述吸氣能 力高並具有碳植入層且經 RTA 處理過的晶圓上，於 1 0 50〜1 250°(：左右，依照<：¥0法來進行磊晶成長。 形成磊晶層後，能夠在晶圓表面形成固體攝像元件。 如此，依本發明的製造方法所製造出來的磊晶晶圓，因為 其吸氣能力面、且在遙晶層幾乎未形成·δ晶缺陷'所以若 形成固體攝像元件時，能夠產率良好地製造出良好的固體 攝像裝置。 依照本發明的製造方所製造出來的磊晶晶圓，因為在 形成磊晶層之前，便恢復了因形成吸氣層所進行的離子植 入而引起的紊亂的結晶性，所以即使即使形成磊晶層，亦 能夠防止起因於晶圓的結晶性奮亂之蟲晶缺陷。 而且，所使用的單結晶矽晶圓，以使用氧濃度為 0.9〜1.5xl018atoms/cm3的晶圓為佳。藉由使用如此的晶 圓，即便碳離子的劑量低，亦能夠在晶圓表面附近產生充 分的氧析出。 13 200903646 以下，顯示實施例及比較例來更具體地說明本發明， 但是本發明未限定於這些例子。 (實施例1) 首先，準備直徑為2 0 0毫米之P型單結晶矽晶圓。 接著，在該晶圓，使用高電流離子植入機並以劑量為 lxl014atoms/cm2的條件，離子植入碳而形成碳植入層。Therefore, when an epitaxial wafer is used to form a solid-state imaging device, a method of manufacturing a carbon gettering epitaxial wafer is disclosed as a getter technique for removing the metal impurities by inhalation (for example, refer to Japanese Patent Laid-Open) 6 - 3 3 8 5 0 7) discloses that a carbon ion implantation region is formed by implanting carbon ions from one side of a germanium wafer, and a germanium epitaxial layer is formed on the surface. Further, in order to improve the gettering ability, there is a proposal to disclose a method (for example, refer to Japanese Laid-Open Patent Publication No. Hei 1 1 - 2 5 1 3 2 2), after implanting carbon ions and nitrogen ions on the surface of a tantalum wafer, A method of forming a germanium epitaxial layer on the surface thereof; or a proposal to disclose a method (for example, refer to the publication of the Japanese Patent Publication No. 2 0 0 2 - 1 3 4 5 1 1), which is a wafer containing nitrogen A method in which a surface is implanted with a thick carbon ion and a germanium epitaxial layer is formed on the surface. However, if the component process is a low-temperature process, oxygen deposition is difficult, and even if carbon ions are implanted, there is a problem that the gettering ability is poor. Moreover, the higher the dose of implanted carbon ions, the more difficult the recovery process before the process of the crystal crystals is. > There is a case where the crystal layer cannot grow. Further, even if the crystal layer can grow, 5 is easy to form insect crystal defects. The problem. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for fabricating an epitaxial wafer by first implanting carbon ions to form a carbon ion implant layer, and forming a germanium epitaxial layer on the implant surface. Previously, the recovery heat treatment was surely performed to provide a manufacturing method capable of producing a crystal wafer having a south-intensity gettering capability without forming a stray crystal defect* in the crystal layer at a low cost. In order to solve the above problems, the present invention provides a method for manufacturing an epitaxial wafer, which is a method for manufacturing an epitaxial wafer, which is characterized in that carbon ions are implanted first to form a carbon implantation layer, and then, rapid heating and rapid cooling are used. The (RTA) device is heat treated in an ammonia or nitrogen containing environment and then formed on the chopped wafer after the heat treatment. As described above, by performing the recovery heat treatment of the crystallinity after the implantation of the carbon ions by using the RTA apparatus, the crystallinity of the wafer can be recovered in a short time, and the time required for the process can be shortened. Further, by making the environment for restoring the heat treatment an environment containing ammonia or nitrogen, it is possible to implant holes near the surface of the wafer during the heat treatment process, and it is possible to improve the gettering ability as compared with the case where only carbon ions are implanted. Further, since the crystallinity of the wafer is restored by the RTA process, when an epitaxial layer is formed on the surface of the wafer, a wafer in which a stray defect is hardly formed can be formed. Further, in the production method of the present invention, the environment for the heat treatment is preferably a nitrogen gas addition environment having an ammonia concentration of 0.5 to 3% or a nitrogen concentration of 100 to 1,000 ppm. When the ammonia or nitrogen concentration is in the above range, it is possible to efficiently implant the holes while avoiding the necessity of implanting nitrogen into the wafer which is necessary for the foreign matter element, even when the heat treatment is performed using the RTA apparatus. Further, in the production method of the present invention, the dose of the above-mentioned carbon ions is preferably 1 x 10 13 to 5 x 10 15 atoms/cm 2 . 9 200903646 Thus, in the case of a dose of lxlO13 to 5xl015atoms/cm2, crystallinity can be restored by RTA treatment, and oxygen can be promoted in the vicinity of the wafer surface. Further, in the production method of the present invention, the heat treatment by the rapid heating or rapid cooling (RTA) apparatus is preferably carried out so as to be a treatment time of from 1 to 100 ° C to the melting point of the crucible and from 10 to 60 seconds. By performing the heat treatment under such conditions, the crystallinity of the wafer can be surely restored, and the heat treatment condition for restoring the crystallinity in a short time can be achieved. Further, a method of manufacturing a solid-state imaging device is preferably such that a solid-state imaging device is formed on the insect crystal layer of the insect crystal wafer manufactured by the manufacturing method according to the present invention. As described above, since the epitaxial wafer* manufactured by the manufacturing method of the present invention hardly forms a crystal grain defect in the insect layer, a solid-state imaging device can be produced with good yield. Further, the epitaxial wafer produced by the manufacturing method of the present invention is preferably such that no stray defects are formed in the crystal layer. As described above, since the epitaxial crystal grain produced by the manufacturing method according to the present invention has a high gas absorption capability and can restore the crystallinity of the lower layer, it is an amorphous wafer which does not form a stray crystal defect. As described above, in the present invention, when an epitaxial wafer is fabricated, carbon ions are implanted on the germanium wafer to form a carbon implant layer, and then, a rapid heating, rapid cooling (RTA) device is used, and The environment of ammonia or nitrogen is subjected to a recovery heat treatment of crystallinity, and then on the tantalum wafer after the heat treatment, a crystal layer of 10 200903646 is formed. By performing the above-described process, since the high-intensity gettering capability is provided and the recovery heat treatment before the epitaxial process can be reliably performed, it is possible to provide a manufacturing method capable of preventing the formation of epitaxial defects in the epitaxial layer at low cost. And an epitaxial wafer with high gettering capability in the component process. [Embodiment] Hereinafter, the present invention will be specifically described. As described above, it is expected to develop a method capable of producing a high-intensity gettering ability at a low cost, and by preventing a recovery heat treatment before the epitaxial process, it is possible to prevent the formation of insect crystal defects in the insect layer. Wafer. Therefore, the present invention has repeatedly focused on the use of the crystallographic recovery heat treatment after carbon ion implantation to improve the gettering ability and at the same time solve the above problems. As a result, the inventors of the present invention have conceived that the RTA device is used for rapid heating, rapid cooling, recovery treatment for crystallinity in a short time, and implantation of holes by heat treatment in an environment containing ammonia or nitrogen, without lowering The present invention has been completed by a gettering ability and capable of imparting a high-intensity gettering ability. Hereinafter, the present invention will be described in more detail using Fig. 1, but the present invention is not limited thereto. First, a single crystal germanium wafer 11 is prepared. A high-current ion implanter is used to perform carbon ion implantation on the main surface of either side of the Shihua wafer, and a carbon implant layer 12 is formed in the dream crystal circle. The dose of carbon ions can be set to 1 X 1 0 13~5 X 1 0 15 atoms/cm 2 °. By setting the dose in the above range, it is possible to obtain a wafer even after heat treatment with a short period of 11 200903646 after implantation of carbon ions. Recovery of crystallinity. Further, in order to promote oxygen evolution, it is preferred in the range of the above dosage. Subsequently, heat treatment is performed to recover the crystallinity of the epitaxial wafer caused by the implantation of carbon ions. The heat treatment is carried out by a rapid hot and rapid cooling (RTA) apparatus. This heat treatment is carried out in an environment (atmosphere) containing ammonia or nitrogen. By using an RTA apparatus and heat-treating in an environment containing ammonia or nitrogen as described above, it is possible to restore wafer crystallinity in a short heat treatment time. Further, by containing ammonia or nitrogen, it is possible to implant a hole in the wafer during the heat treatment, whereby oxygen can be efficiently deposited, and a BMD (Body MicroDefect) layer 13 can be formed. Impurities such as heavy metals may be inhaled (absorbed) in the formed BMD layer 13. By performing the above, it is possible to obtain a remote crystal wafer having a high-intensity gettering capability even by a short-time process. When the environment containing ammonia is carried out, the ammonia concentration may be 〇 5 to 3 %. When the environment containing nitrogen is carried out, the nitrogen concentration may be an environment in which 100 to 100 ppm of nitrogen gas is added. By embedding holes in the aforementioned concentration range, it is not necessary to increase the total amount of nitrogen entering the wafer, and it is also possible to implant a sufficient amount of holes. Here, even if the heat treatment is performed in a small oxygen atmosphere of 1 〇 〇 p p m or less in the gas addition environment, the same effects as described above can be obtained. As the heat treatment conditions, the treatment temperature can be set to a temperature of from 1 1 0 0 °C to 矽 melting point. It is especially good at 1100 to 1 2 5 0 °c. The processing speed can be set to 1 0 to 60 seconds. According to the heat treatment conditions described above, it is possible to reliably restore the crystallinity of the wafer to 200903646 and to perform processing in a short time. Therefore, the process can be shortened and the cost can be reduced. Although the number of heat treatments is sufficient once, the number of times is not particularly limited. When the crystallinity is emphasized, it can be repeated 2 to 3 times. The insect layer 14 is then formed 'on the face where the carbon ions have been implanted'. The formation of the crystal layer 14 can be carried out under normal conditions. For example, when H2 is used as the carrier gas, the source gas such as SiHCl3 can be introduced into the processing chamber, and the RPA-treated wafer having the high gas absorption capability and having the carbon implantation layer disposed on the susceptor can be disposed. In the above, the epitaxial growth is performed according to the <:¥0 method at a temperature of about 10 50 to 1 250°. After the epitaxial layer is formed, a solid-state imaging element can be formed on the surface of the wafer. Thus, the manufacturing according to the present invention The epitaxial wafer produced by the method has a gettering ability surface and hardly forms a ? crystal defect in the crystal layer. Therefore, when a solid-state imaging device is formed, a good solid-state imaging device can be manufactured with good yield. According to the epitaxial wafer manufactured by the manufacturer of the present invention, since the crystallinity of the disorder caused by the ion implantation by the formation of the gettering layer is restored before the epitaxial layer is formed, even if it is formed even The epitaxial layer can also prevent the crystal defects caused by the crystallinity of the wafer. Moreover, it is preferable to use a wafer having an oxygen concentration of 0.9 to 1.5 x 10 018 atoms/cm 3 for the single crystal germanium wafer to be used. By using this The wafer can generate sufficient oxygen deposition in the vicinity of the wafer surface even if the dose of carbon ions is low. 13 200903646 Hereinafter, the present invention will be more specifically described by showing examples and comparative examples, but the present invention is not limited to these examples. (Example 1) First, a P-type single crystal germanium wafer having a diameter of 200 mm was prepared. Next, on the wafer, a high current ion implanter was used and the ion implantation was carried out at a dose of lxl014 atoms/cm2. Carbon is formed to form a carbon implant layer.

隨後，在氨濃度為1 . 〇 %的氬環境下，使用急速加熱、 急速冷卻（RTA)裝置，以11 7 5 °C、3 0秒及1 1 7 0 °C、3 0秒重 複進行2次之條件，進行熱處理用以使結晶性恢復。 隨後，1 1 3 0 °C的處理條件，在形成有碳植入層之晶圓 表面，形成磊晶層，來製造磊晶晶圓。所形成的磊晶層的 厚度為約6微米。 所製造的磊晶晶圓的特性評價如下。 使用微粒計數益觀察蟲晶晶圓表面的蠢晶缺陷。其結 果如第2圖所示。 依照二次離子質量分析法評價在磊晶晶圓中的氧、 碳、氮濃度。結果如第3圖所示。 為了評價藉由 RTA裝置來進行熱處理時所植入的空 穴濃度，是進行氧析出熱處理，來評價 BMD密度。氧析 出熱處理條件是設為8 0 0 °C、4小時及1 0 0 0 °C、1 6小時。 隨後，對氧析出熱處理後的蟲晶晶圓的表面，進行角拋光 (angle polish)評價，並觀察蟲晶層、碳植入層、破植入層 下部的剖面，來評價B M D密度分布。結果如第4圖所示。 而且，利用 FTIR來評價氧析出熱處理前後之晶圓的 14Subsequently, in an argon atmosphere having an ammonia concentration of 1. 〇%, using a rapid heating, rapid cooling (RTA) device, repeating at 11 7 5 ° C, 30 seconds, and 1 1 70 ° C, 30 seconds 2 The second condition is heat treatment to restore crystallinity. Subsequently, an epitaxial wafer was formed on the surface of the wafer on which the carbon implantation layer was formed under the processing conditions of 1 130 °C to fabricate an epitaxial wafer. The thickness of the epitaxial layer formed was about 6 microns. The characteristics of the produced epitaxial wafer were evaluated as follows. Use particle counting to observe the stray defects on the surface of the wafer. The result is shown in Figure 2. The oxygen, carbon, and nitrogen concentrations in the epitaxial wafer were evaluated according to secondary ion mass spectrometry. The result is shown in Figure 3. In order to evaluate the concentration of the cavity implanted during the heat treatment by the RTA apparatus, the oxygen precipitation heat treatment was performed to evaluate the BMD density. The oxygen evolution heat treatment conditions were set to 80 ° C, 4 hours, and 1 0 0 ° C for 16 hours. Subsequently, the surface of the crystal wafer after the oxygen precipitation heat treatment was subjected to angle polishing evaluation, and the cross section of the insect crystal layer, the carbon implantation layer, and the lower portion of the implanted layer was observed to evaluate the B M D density distribution. The result is shown in Figure 4. Moreover, the FTIR is used to evaluate the wafers before and after the oxygen evolution heat treatment.

200903646 氧析出量（△ 〇 i )。結果如第5圖所示。 (比較例1) 在比較例1，除了使用電阻加熱裝置，在Ar環境下 在1 1 0 0 °C、5分鐘及1 0分鐘的條件，來進行熱處理用以 復結晶性以外，利用與實施例1同樣的條件來製造磊晶 圓。隨後，進行與實施例1同樣的評價。 第2圖是表示本發明的實施例與比較例之磊晶晶圓 表面缺陷的一個例子之分布圖。 實施例1的磊晶晶圓的表面與比較例1之經過1 0分 熱處理後的表面大約相同，無法檢測出磊晶缺陷。另一 面，以電阻加熱爐加熱處理5分鐘後的蟲晶晶圓’其結 性恢復不充分。由此，得知藉由在含有氨的環境下，使 RTA裝置之熱處理，亦能夠使碳植入後的結晶性恢復。 此*得知能夠以短時間的熱處理來得到在蟲晶層無蟲晶 陷之蟲晶晶圓。 第3圖是表示本發明的實施例1之自晶圓表面之氧 石炭、氣濃度的分布曲線圖。在晶圓表面的蠢晶層幾乎無 分布。又，得知碳是集中於分布於蠢晶層正下方部分， 在蟲晶層正下方形成有碳植入層。由此，得知吸氣層被 成在接近磊晶層處。又，重複進行使用RTA裝置之熱處 時，氧濃度、碳濃度分布幾乎沒有變化，但是得知在從 面至約4 5微米的測定區域，氮濃度是慢慢地增加，在碳 子植入層的下方植入有充分的空穴。 以 恢 晶 的 鐘 方 晶 用 由 缺 氧 且 形 理 表 離 15 200903646 第4圖是表示本發明的實施例1與比較例1 ( 1 0分鐘熱 處理）中的自晶圓表面的BMD的深度方向分布圖。 得知實施例1之磊晶晶圓，在碳植入層下方，能夠觀 察到高密度的BMD分布，其密度為5x1 05個/平方公分以 上。比較例1的晶圓表面與實施例1比較時，幾乎未觀察 到BMD，其密度為1 X 1 04個/平方公分以下。因此，得知依 照本發明的製造方法能夠得到一種磊晶晶圓，除了碳植入 層以外亦具有稱為B M D層之具有吸氣（吸除）能力的層。 (實施例2、3、4、比較例2、3、4) 實施例 2、3、4，除了將碳離子的植入量依照順序設 為 5xl014、5xl013、lxl013atoms/cm2 以外，以與實施例 1 同樣的條件來製造磊晶晶圓，並與實施例1進行同樣的評 價。 同樣地，比較例 2、3、4，除了將碳離子的植入量依 照順序設為5 X 1 0 14、5 X 1 0 13、1 X 1 0 13 a t 〇 m s / c m2且將熱處理 設為1 0分鐘以外，以與比較例1同樣的條件來製造磊晶晶 圓，並與實施例1進行同樣的評價。 結果，得知在實施例2、3、4中，其碳植入量增加之 同時，碳植入層的形成亦變為顯著，但是碳植入層下方的 B M D層的形成程度相同。又，任一實施例都未產生磊晶缺 陷。 另一方面，得知在比較例2、3、4中，其礙植入層的 形成是與對應的實施例大致相同的程度，但是，碳植入層 16 200903646 的下部在氧析出熱處理後幾乎未形成 BMD層，該結果與 對應的實施例的晶圓比較時，成為吸氣能力較差的晶圓。 (實施例5) 在實施例5，除了使藉由RTA裝置進行之熱處理條件 設為1 2 0 0 °C、1 〇秒以外，以與實施例1同樣的條件來製造 轰晶晶圓’並進行與貫施例1同樣的評價。200903646 Oxygen precipitation (△ 〇 i ). The result is shown in Figure 5. (Comparative Example 1) In Comparative Example 1, except for using a resistance heating device, heat treatment was performed under conditions of 1,100 ° C, 5 minutes, and 10 minutes in an Ar atmosphere for use in addition to the recrystallization property. Example 1 produced the same wafer under the same conditions. Subsequently, the same evaluation as in Example 1 was carried out. Fig. 2 is a distribution diagram showing an example of surface defects of epitaxial wafers in the examples and comparative examples of the present invention. The surface of the epitaxial wafer of Example 1 was approximately the same as that of Comparative Example 1 after 10 minutes of heat treatment, and the epitaxial defects could not be detected. On the other hand, the wafer crystal wafer after heat treatment for 5 minutes in a resistance heating furnace was insufficiently restored. From this, it was found that the crystallinity after carbon implantation can be restored by heat treatment of the RTA apparatus in an atmosphere containing ammonia. This * knows that it is possible to obtain a wafer-free wafer in the insect layer without insects in a short time heat treatment. Fig. 3 is a graph showing the distribution of oxygen gas and gas concentration from the surface of the wafer in Example 1 of the present invention. There is almost no distribution of the stray layer on the surface of the wafer. Further, it was found that carbon was concentrated on a portion directly under the stray layer, and a carbon implant layer was formed directly under the crystal layer. Thus, it is known that the gettering layer is formed close to the epitaxial layer. Further, when the heat of the RTA apparatus was repeatedly used, the oxygen concentration and the carbon concentration distribution hardly changed, but it was found that the nitrogen concentration was slowly increased in the measurement region from the surface to about 45 μm, in the carbon implantation. There are sufficient holes implanted under the layer. The crystallized clock crystal is used by the oxygen-deficient and chemically separated surface. 15 200903646 FIG. 4 is a view showing the depth direction distribution of the BMD from the wafer surface in Example 1 and Comparative Example 1 (10-minute heat treatment) of the present invention. . It was found that the epitaxial wafer of Example 1 was able to observe a high-density BMD distribution under the carbon implantation layer with a density of 5 x 10 5 /cm 2 or more. When the surface of the wafer of Comparative Example 1 was compared with Example 1, almost no BMD was observed, and the density thereof was 1 × 10 4 /cm 2 or less. Thus, it has been found that an epitaxial wafer can be obtained in accordance with the manufacturing method of the present invention, and has a layer having a gettering (absorption) capability called a B M D layer in addition to the carbon implant layer. (Examples 2, 3, 4, Comparative Examples 2, 3, 4) Examples 2, 3, and 4, except that the implantation amount of carbon ions was set to 5xl014, 5xl013, lxl013atoms/cm2 in order, and examples 1 An epitaxial wafer was produced under the same conditions, and the same evaluation as in Example 1 was carried out. Similarly, Comparative Examples 2, 3, and 4, except that the implantation amount of carbon ions was set to 5 X 1 0 14 , 5 X 1 0 13 , 1 X 1 0 13 at 〇ms / c m2 in order, and the heat treatment was set. The epitaxial wafer was produced under the same conditions as in Comparative Example 1 except for 10 minutes, and the same evaluation as in Example 1 was carried out. As a result, it was found that in Examples 2, 3, and 4, the carbon implantation amount was increased while the carbon implantation layer was formed, but the formation of the B M D layer under the carbon implantation layer was the same. Also, none of the embodiments produced epitaxial defects. On the other hand, it is found that in Comparative Examples 2, 3, and 4, the formation of the implant layer is substantially the same as that of the corresponding embodiment, but the lower portion of the carbon implant layer 16 200903646 is almost after the oxygen evolution heat treatment. The BMD layer was not formed, and this result became a wafer having a poor gas absorption capability when compared with the wafer of the corresponding example. (Example 5) In Example 5, a crystallized wafer was fabricated under the same conditions as in Example 1 except that the heat treatment conditions by the RTA apparatus were set to 1 2 0 0 ° C for 1 〇 second. The same evaluation as in Example 1 was carried out.

結果，即便將熱處理條件變更為1 2 0 0 °c、1 〇秒，亦成 為具有與實施例1幾乎相同特性之磊晶晶圓。 第5圖是表示比較在各實施例、比較例中的氧析出熱 處理前後的晶圓殘留氧濃度變化（△ 0 i :氧析出物）之圖。 在實施例 1〜4，得知碳植入量增加之同時，熱處理前 後的氧濃度變化量變大。由此，得知植入量越多，能夠使 越多的氧析出。但是，BMD的密度是幾乎沒有變化。得知 在藉由電阻加熱之恢復熱處理中，析出熱處理前後的氧濃 度幾乎沒有變化，BMD的密度也幾乎沒有變化。由此，得 知熱處理條件是相當有助於B M D層的形成（亦即入處理條 件會影響BMD層的形成）。 從上述得知，藉由RTA裝置且在氮化性環境下之急速 加熱、急速冷卻所進行熱處理，能夠製造出其吸氣能力比 糟由電阻加熱進行熱處理所得到的晶圓南之晶圓。 在下述表 1，是表示整理各實施例、比較例中的磊晶 晶圓的評價結果。 17 200903646 [表i] 碳植入量 [atoms/cm2 ] 恢復熱處理 碳植入層 形成 △〇i BMD層 形成 蟲晶缺陷 之有無 裝置 處理溫度 rci 處理時間 [秒] 實施例1 lxlO14 RTA 1175 30 ◎ 〇 〇 無 比較例1 lxlO14 電阻加熱 1100 300 Δ X X 有 600 Δ X X 無 實施例2 5xl014 RTA 1175 30 ◎ 〇 〇 無 實施例3 5xl013 RTA 1175 30 〇 〇 〇 無 實施例4 lxlO13 RTA 1175 30 〇 〇 〇 無 實施例5 lxlO14 RTA 1200 10 ◎ 〇 〇 無 比較例2 5xl014 電阻加熱 1100 600 〇 X X 無 比較例3 5xl013 電阻加熱 1100 600 Δ X X 無 比較例4 lxlO13 電阻加熱 1100 600 Δ X X 無As a result, the epitaxial wafer having almost the same characteristics as those of the first embodiment was obtained even when the heat treatment conditions were changed to 1 2 0 0 °c and 1 sec. Fig. 5 is a view showing a comparison of wafer residual oxygen concentration change (?0i: oxygen precipitate) before and after the oxygen evolution heat treatment in each of the examples and the comparative examples. In Examples 1 to 4, it was found that the amount of change in the oxygen concentration before and after the heat treatment was increased while the amount of carbon implantation was increased. Thus, it is known that the more the amount of implantation, the more oxygen can be deposited. However, the density of BMD is almost unchanged. It was found that in the recovery heat treatment by resistance heating, the oxygen concentration before and after the precipitation heat treatment hardly changed, and the density of BMD hardly changed. Thus, it is known that the heat treatment conditions are quite conducive to the formation of the B M D layer (i.e., the in-process conditions affect the formation of the BMD layer). From the above, it is known that the heat treatment by rapid heating and rapid cooling in an nitriding environment by an RTA apparatus can produce a wafer wafer having a lower gas absorption capacity than that obtained by heat treatment by resistance heating. Table 1 below shows the results of evaluation of the epitaxial wafers in the respective examples and comparative examples. 17 200903646 [Table i] Carbon implantation amount [atoms/cm2] Recovery of heat-treated carbon implant layer formation △〇i BMD layer formation of insect crystal defects The processing temperature rci Treatment time [sec] Example 1 lxlO14 RTA 1175 30 ◎ 〇〇 no comparative example 1 lxlO14 resistance heating 1100 300 Δ XX has 600 Δ XX no example 2 5xl014 RTA 1175 30 ◎ no example 3 5xl013 RTA 1175 30 〇〇〇 no example 4 lxlO13 RTA 1175 30 〇〇〇 None Example 5 lxlO14 RTA 1200 10 ◎ 〇〇 No Comparative Example 2 5xl014 Resistance Heating 1100 600 〇 XX No Comparative Example 3 5xl013 Resistance Heating 1100 600 Δ XX No Comparative Example 4 lxlO13 Resistance Heating 1100 600 Δ XX None

如上述，若依照本發明，在碳植入後，藉由在氨環境 等的氮化性環境下使用急速加熱、急速冷卻裝置進行恢復 熱處理，用以使晶圓的結晶性恢復，即便是短處理時間， 亦能夠謀求晶圓結晶性的恢復’而且’在熱處理中藉由在 晶圓表面植入空穴，能夠得到一種磊晶晶圓，其具有高強 度吸氣能力的層，接近蟲晶層。 又，本發明未限定於上述實施形態。上述實施形態是 例示性，凡是具有與本發明之申請專利範圍所記載之技術 思想實質上相同構成、且達成相同作用效果之物，無論如 何都包含在本發明的技術範圍内。 18 200903646 [ 圖 式 簡 單 說明 ] 第 1 圖 是表 示 本 發 明 的 晶 晶 圓的製造方法 的 一 個 例 子 之 流 程 圖 〇 第 2 圖 是表 示 本 發 明 的 實 施 例 與比較例之磊 晶 晶 圓 的 表 面 缺 陷 的 一個 例 子 之 分 布 圖 〇 第 3 圖 是表 示 本 發 明 的 實 施 例 1之自晶圓表 面 之 氧 、 碳 、 氮 濃 度 的分 布 曲 線 圖 0 第 4 圖 是表 示 本 發 明 的 實 施 例 1與比較例1 中 的 白 晶 圓 表 面 的 BMD的深度方向分布圖。 第 5 圖 是比 較 在 各 實 施 例 、 比 較例中的氧析 出 孰 1 *»> 處 理 前 後 的 晶 圓 殘留 氧 濃 度 變 化 (Δ Oi ： 氧析出物）之丨 圖 〇 [ 主 要 元 件 符號 說 明 ] 11 單結 晶 矽 晶 圓 12 碳植入層 13 BMD 層 14 蟲晶層 19As described above, according to the present invention, after the carbon implantation, the recovery heat treatment is performed by using a rapid heating or rapid cooling device in a nitriding environment such as an ammonia atmosphere to restore the crystallinity of the wafer, even if it is short. The processing time can also be used to restore the crystallinity of the wafer. Moreover, by depositing holes on the surface of the wafer during heat treatment, an epitaxial wafer having a layer of high-intensity gettering capability and close to the insect crystal can be obtained. Floor. Further, the present invention is not limited to the above embodiment. The above-described embodiments are exemplified, and any object having substantially the same configuration as the technical idea described in the patent application scope of the present invention and achieving the same operational effects is included in the technical scope of the present invention. 18 200903646 [Brief Description of the Drawings] Fig. 1 is a flow chart showing an example of a method for producing a crystal wafer of the present invention. Fig. 2 is a view showing surface defects of epitaxial wafers of Examples and Comparative Examples of the present invention. FIG. 3 is a distribution diagram showing oxygen, carbon, and nitrogen concentrations from the wafer surface in the first embodiment of the present invention. FIG. 4 is a view showing Embodiment 1 and Comparative Example 1 of the present invention. The depth direction distribution of the BMD of the white wafer surface. Fig. 5 is a diagram comparing the change of residual oxygen concentration (Δ Oi : oxygen precipitate) of the wafer before and after the treatment of oxygen deposition 孰 1 *» in each of the examples and the comparative examples. [Major component symbol description] 11 Single crystal germanium wafer 12 carbon implant layer 13 BMD layer 14 worm layer 19

Claims (1)

200903646 十、申請專利範圍： 1. 一種磊晶晶圓的製造方法，是製造磊晶晶圓的方法， 其特徵為： 先植入碳離子而形成碳植入層，隨後，使用急速加熱、 急速冷卻（RTA)裝置，並在含氨或氮的環境進行熱處理， 然後在進行該熱處理後的矽晶圓上，形成磊晶層。 2. 如申請專利範圍第1項所述之磊晶晶圓的製造方法， r , ‘ 其中上述熱處理的環境是氨濃度為0.5〜3%、或是氮濃度為 100~1000ppm之氮化氣體添加環境。 3. 如申請專利範圍第1項所述之磊晶晶圓的製造方法， 其中植入上述碳離子的劑量為Ixl0n〜5xl015 atoms/cm2。 4. 如申請專利範圍第2項所述之磊晶晶圓的製造方法， 其中植入上述碳離子的劑量為1x10i3~5x1015 atoms/cm2。 U 5. 如申請專利範圍第1項所述之磊晶晶圓的製造方法， 其中使用上述急速加熱、急速冷卻（RTA)裝置之熱處理， 是設為在1 1 00 °C〜矽熔點溫度且1 〇〜60秒的處理時間。 6. 如申請專利範圍第2項所述之磊晶晶圓的製造方法， 其中使用上述急速加熱、急速冷卻（RTA)裝置之熱處理， 是設為在1 1 00°C ~矽熔點溫度且1 〇〜60秒的處理時間。 20 200903646 7. 如申請專利範圍第3項所述之磊晶晶圓的製造方 其中使用上述急速加熱、急速冷卻（RTA)裝置之熱處 是設為在1 1 0 0 °C ~矽熔點溫度且1 〇〜6 0秒的處理時間 8. 如申請專利範圍第4項所述之磊晶晶圓的製造方 其中使用上述急速加熱、急速冷卻（RTA)裝置之熱處 是設為在1 1 00°C〜矽熔點溫度且1 〇〜60秒的處理時間 9. 一種固體攝像裝置的製造方法，其特徵為： 是在以申請專利範圍第1至8項中任一項所述之 方法製造出來的磊晶晶圓的磊晶層上，形成固體攝像； 10. —種蠢晶晶圓，其特徵為. 是依照如申請專利範圍第1至8項中任一項所述 造方法製造出來的蠢晶晶圓’在其蟲晶層未形成蠢晶 者0 法， 理， 〇 法， 理， 製造 〕件。 之製 缺陷200903646 X. Patent application scope: 1. A method for manufacturing an epitaxial wafer, which is a method for manufacturing an epitaxial wafer, which is characterized in that: carbon ions are implanted first to form a carbon implantation layer, and then, rapid heating and rapid use are used. A cooling (RTA) device is used, and heat treatment is performed in an environment containing ammonia or nitrogen, and then an epitaxial layer is formed on the tantalum wafer after the heat treatment. 2. The method for manufacturing an epitaxial wafer according to claim 1, r, ' wherein the heat treatment environment is a nitrogen gas concentration of 0.5 to 3% or a nitrogen concentration of 100 to 1000 ppm. surroundings. 3. The method of manufacturing an epitaxial wafer according to claim 1, wherein the dose of the carbon ions implanted is Ix10n~5xl015 atoms/cm2. 4. The method for producing an epitaxial wafer according to claim 2, wherein the dose of the carbon ions implanted is 1×10i3 to 5×10 15 atoms/cm 2 . U 5. The method of manufacturing an epitaxial wafer according to claim 1, wherein the heat treatment using the rapid heating and rapid cooling (RTA) device is set at a temperature of from 1 to 100 ° C to 矽 melting point 1 〇 ~ 60 seconds of processing time. 6. The method for producing an epitaxial wafer according to claim 2, wherein the heat treatment using the rapid heating and rapid cooling (RTA) device is set at a temperature of 1 00 ° C to 矽 melting point and 1 〇~60 seconds processing time. 20 200903646 7. The manufacturer of the epitaxial wafer according to claim 3, wherein the heat of the above-mentioned rapid heating and rapid cooling (RTA) device is set at a temperature of 1 1 0 0 ° C to 矽 melting point. And a processing time of 1 〇 to 60 seconds. 8. The manufacturer of the epitaxial wafer according to the fourth aspect of the patent application, wherein the heat of the rapid heating and rapid cooling (RTA) device is used is set at 1 1 00 ° C ~ 矽 melting point temperature and a treatment time of 1 〇 ~ 60 seconds 9. A method of manufacturing a solid-state imaging device, characterized in that it is manufactured by the method according to any one of claims 1 to 8. Forming a solid-state image on the epitaxial layer of the epitaxial wafer; 10. A silly wafer, characterized by being manufactured according to the method of any one of claims 1 to 8. The stupid crystal wafer 'in its worm layer does not form a stupid crystal 0 method, rational, 〇 method, rational, manufacturing] pieces. System defect J 21J 21
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