JP2018098266A - 光電変換装置、光電変換装置の製造方法およびカメラ - Google Patents
光電変換装置、光電変換装置の製造方法およびカメラ Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000012535 impurity Substances 0.000 claims abstract description 196
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000001301 oxygen Substances 0.000 claims abstract description 95
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 92
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- 229910052800 carbon group element Inorganic materials 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims description 171
- 229910052799 carbon Inorganic materials 0.000 claims description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 48
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 11
- 239000010941 cobalt Substances 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 description 50
- 230000007547 defect Effects 0.000 description 33
- 230000000052 comparative effect Effects 0.000 description 30
- 239000010410 layer Substances 0.000 description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 24
- 238000005247 gettering Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 206010047571 Visual impairment Diseases 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- -1 carbon ions Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/02381—Silicon, silicon germanium, germanium
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Abstract
【解決手段】光電変換装置はシリコン基板を有し、前記シリコン基板は、光電変換部と、シリコン以外の第14族元素を含有する不純物含有部とを含み、前記不純物含有部における第14族元素のピーク濃度である第1ピーク濃度が1×1018[atoms/cm3]以上かつ1×1020[atoms/cm3]以下であり、前記異種元素含有部における酸素のピーク濃度である第2ピーク濃度が前記第1ピーク濃度の1/1000以上かつ1/10以下である。
【選択図】図1
Description
Claims (20)
- シリコン基板を有する光電変換装置であって、
前記シリコン基板は、光電変換を行う第1部分と、前記第1部分よりも前記シリコン基板の受光面から離れて配され、シリコン以外の第14族元素を含有する第2部分とを含み、
前記第2部分における前記第14族元素のピーク濃度である第1ピーク濃度が1×1018[atoms/cm3]以上かつ1×1020[atoms/cm3]以下であり、
前記第2部分における酸素のピーク濃度である第2ピーク濃度が前記第1ピーク濃度の1/1000以上かつ1/10以下である、
ことを特徴とする光電変換装置。 - 前記受光面に直交する方向において、前記第2部分と前記受光面との間に前記第1部分が配されている、
ことを特徴とする請求項1に記載の光電変換装置。 - 前記第2部分は、前記受光面に沿った層を構成するように配されている、
ことを特徴とする請求項1又は2に記載の光電変換装置。 - 前記第2部分は、前記受光面からの距離が3μmから20μmの範囲内に配されている、
ことを特徴とする請求項1乃至3のいずれか1項に記載の光電変換装置。 - 前記第2部分は、前記第14族元素の濃度が1×1018[atoms/cm3]以上である第1領域を有し、前記受光面に直交する方向における前記第1領域の寸法が3μm以下である、
ことを特徴と請求項1乃至4のいずれか1項に記載の光電変換装置。 - 前記第2部分は、前記第14族元素の濃度が1×1019[atoms/cm3]以上である第2領域を有し、前記第2領域における酸素の濃度が3×1018[atoms/cm3]以下である、
ことを特徴とする請求項1乃至5のいずれか1項に記載の光電変換装置。 - 前記第1部分を含む画素から信号を読み出すための周辺回路部を更に備え、
前記周辺回路部は、シリサイド領域を有するトランジスタを含む、
ことを特徴とする請求項1乃至6のいずれか1項に記載の光電変換装置。 - 前記シリサイド領域は、ニッケルおよびコバルトの少なくとも1つを含む、
ことを特徴とする請求項7に記載の光電変換装置。 - 前記第14族元素は、炭素である、
ことを特徴とする請求項1乃至8のいずれか1項に記載の光電変換装置。 - 前記第1部分は、n型の第1不純物領域と、前記第1不純物領域と前記第2部分との間に位置するp型の第2不純物領域と、を含み、
前記第2不純物領域と前記第2部分との間にはn型の不純物領域が設けられている、
ことを特徴とする請求項1乃至9のいずれか1項に記載の光電変換装置。 - 半導体基板の製造方法であって、
酸素濃度が2×1016[atoms/cm3]以上かつ8×1017[atoms/cm3]以下の範囲内であるシリコン板を準備する工程と、
前記シリコン板に対してシリコンを除く第14族元素を注入する工程と、
前記シリコン板の上にシリコン層を形成する工程と、
を含むことを特徴とする半導体基板の製造方法。 - 半導体基板の製造方法であって、
酸素濃度が2×1016[atoms/cm3]以上かつ8×1017[atoms/cm3]以下の範囲内であるシリコン板と、前記シリコン板の上のシリコン層と、を有するシリコン基板を準備する工程と、
前記シリコン基板に対して、シリコンを除く第14族元素を注入する工程と、
ことを特徴とする半導体基板の製造方法。 - 前記第14族元素を注入する前記工程では、開口部を有するマスクを用い、前記開口部を介して前記第14族元素を注入する、
ことを特徴とする請求項11または12に記載の半導体基板の製造方法。 - 前記第14族元素を注入する前記工程は、10KeV〜200KeVの範囲内の加速エネルギーで前記第14族元素のイオンを加速して注入することでなされる、
ことを特徴とする請求項11乃至13のいずれか1項に記載の半導体基板の製造方法。 - 前記第14族元素を注入する前記工程では、前記第14族元素のドーズ量が1×1014[atoms/cm2]から5×1015[atoms/cm2]の範囲内となるようになされる、
ことを特徴とする請求項11乃至14のいずれか1項に記載の半導体基板の製造方法。 - 前記第14族元素は、炭素である、
ことを特徴とする請求項11乃至15のいずれか1項に記載の半導体基板の製造方法。 - 請求項11乃至16のいずれか1項に記載の半導体基板の製造方法によって製造された半導体基板を準備する工程と、
前記シリコン層に光電変換部を形成する工程と、
を含むことを特徴とする光電変換装置の製造方法。 - 前記シリコン層に、前記光電変換部を含む画素から信号を読み出すための周辺回路のトランジスタを形成する工程を更に含み、
前記トランジスタは、シリサイド領域を含む、
ことを特徴とする請求項17に記載の光電変換装置の製造方法。 - 前記シリサイド領域は、ニッケルおよびコバルトの少なくとも1つを含む、
ことを特徴とする請求項18に記載の光電変換装置の製造方法。 - 請求項1乃至10のいずれか1項に記載の光電変換装置と、
前記光電変換装置からの画像データを処理する処理部と、
を備えることを特徴とするカメラ。
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US15/825,443 US10340400B2 (en) | 2016-12-08 | 2017-11-29 | Photoelectric conversion device, method of manufacturing the same, and camera |
CN201711289553.3A CN108183113B (zh) | 2016-12-08 | 2017-12-08 | 光电转换设备、相机、制造半导体基板的方法以及制造光电转换设备的方法 |
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