TWI542048B - 具有嵌入式奈米線發光二極體之發光二極體裝置 - Google Patents
具有嵌入式奈米線發光二極體之發光二極體裝置 Download PDFInfo
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- TWI542048B TWI542048B TW104107972A TW104107972A TWI542048B TW I542048 B TWI542048 B TW I542048B TW 104107972 A TW104107972 A TW 104107972A TW 104107972 A TW104107972 A TW 104107972A TW I542048 B TWI542048 B TW I542048B
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- Led Devices (AREA)
Description
本發明係關於奈米線裝置。更特定言之,本發明之實施例係關於奈米線LED裝置。
發光二極體(LED)日益被視作現存光源之一替代科技。舉例而言,LED可見於標牌、交通信號、汽車尾燈、行動電子顯示器及電視機中。相較於傳統照明源,LED之多種益處可包含增加之效率、更長壽命、可變發射光譜及與多種外觀尺寸整合之能力。
習知平面型之基於半導體之LED通常自跨一基板表面生長之層圖案化。更熱定言之,平面型之基於半導體之LED包含夾置於較厚基於半導體之包覆層之間之一或多個基於半導體之作用層。最近,已使用由下而上方法以形成可對平面型LED提供若干優點之奈米線LED結構,包含更低錯位密度、更高光提取效率及相對於基板表面積之一更大作用區域表面積。
在圖1中繪示之一實施方案中,一塊狀LED基板100包含生長於一生長基板102上之一緩衝層110。接著,在緩衝層110之一表面上形成一經圖案化遮罩層112(例如,氮化物層,諸如氮化矽遮罩層)以使用諸如化學束磊晶、氣相磊晶之一適當生長技術界定用於奈米線核心114之生長之底部介面區域。因此,可使用下伏緩衝層110之結晶定向而無需使用一粒子或催化劑來完成各奈米線核心114之由下而上形成,且可藉由遮罩層112之微影圖案化而界定奈米線核心114之寬度及
間距。
可針對垂直生長方向控制奈米線核心之磊晶生長條件。一旦達成經判定高度,便改變磊晶生長條件以產生其中作用層116及摻雜外殼118圍繞奈米導熱層核心114之一核殼結構120。替代地,可使用使用作用層及兩個包覆層之垂直生長條件之一類似技術形成奈米線,從而導致類似於平面型LED之一夾置組態而非一核殼結構。
通常以兩種方式封裝實施奈米線陣列之裝置。一種方式包含將奈米線陣列留在原始生長基板上,諸如美國專利第7,396,696號及美國公開案第2011/0240959號中所描述。在此等實施方案中,緩衝層用作一底部電極形成至之一電流輸送層,且一共同頂部電極形成在奈米線陣列上方。另一實施方案包含使用焊料凸塊將奈米線陣列覆晶封裝至一接收基板上,接著移除生長基板,如美國公開案第2011/0309382號及第2011/0254034號中所描述。
本發明描述奈米線裝置及形成準備好被拾取及傳送至一接收基板之奈米線裝置之方法。在一實施例中,一奈米線裝置包含一基底層、在該基底層之一第一表面上且突出遠離該第一表面之複數個奈米線,其中各奈米線包含一核心、一外殼及該核心與該外殼之間之一作用層。一經圖案化遮罩層可形成在基底層上,其中該複數個奈米線之該等核心延伸穿過該經圖案化遮罩層中之對應開口。一囊封材料橫向包圍該複數個奈米線使得該複數個奈米線嵌入於該囊封材料內。一頂部電極層形成在該基底層與該第一表面相對之一第二表面上且與各奈米線之核心電接觸,且一底部電極層與各奈米線之外殼電接觸。
該底部電極層及該頂部電極層可取決於應用而由多種不同材料形成。舉例而言,該頂部電極層可對可見波長光譜透明或半透明,而該底部電極層包含一鏡面層。該底部電極層可額外包含由一貴金屬形
成之一接合層(例如)以控制至一安定性層之黏著或至一接收基板之接合。一或多個底部導電接觸件可形成在該複數個奈米線之外殼上且包圍該複數個奈米線之外殼,其中該底部電極層與該一或多個底部導電接觸件電接觸。在一實施例中,該底部電極層沿著該囊封材料之一底部表面橫跨。在一實施例中,該囊封材料係由一熱固性材料形成。該囊封材料可額外對可見波長透明。
在一實施例中,藉由一載體基板上之一安定性層支撐奈米線裝置之一陣列。另外,一犧牲釋放層可橫跨在該安定性層與該奈米線裝置陣列之間。在一實施例中,該安定性層係由一熱固性材料形成。在一實施例中,該安定性層包含一分級(staging)腔陣列,且該奈米線裝置陣列係在該分級腔陣列內。在一實施例中,該安定性層包含安定性支柱之一陣列,且該奈米線裝置陣列藉由該安定性支柱陣列支撐。該奈米線裝置陣列可藉由該分級腔陣列中之安定性支柱陣列支撐。在各奈米線裝置包含一底部電極層之情況下,該底部電極層可接合至一對應安定性支柱。
形成一奈米結構之一方法可包含橫向包圍奈米線之一陣列且在一處置基板上方形成一囊封材料使得該奈米線陣列嵌入於該囊封材料內。蝕刻一台面溝渠陣列使之穿過該囊封材料,其中各台面溝渠包圍複數個奈米線。接著,在該囊封材料上方且在該台面溝渠陣列內沈積一犧牲釋放層。接著,使用一安定性層將該處置基板接合至一載體基板,其中該犧牲釋放層介於該奈米線陣列與該安定性層之間。接著,移除該處置基板。橫向包圍該奈米線陣列且在該處置基板上方形成該囊封材料可額外包含在該奈米線陣列上方塗佈一第一熱固性材料層且減小該第一熱固性材料層之一厚度以曝露該等奈米線之各者上之一底部導電接觸件。接著,可在該等奈米線之各者之底部導電接觸件上沈積一底部電極。使用該安定性層將該處置基板接合至該載體基板可額
外包含在該犧牲釋放層上方塗佈一第二熱固性材料且固化該第二熱固性材料。在一實施例中,可使用一蒸氣或電漿蝕刻技術蝕刻該犧牲釋放層以自該奈米線陣列與該安定性層之間移除該犧牲釋放層,從而導致包含準備好被拾取及傳送至一接收基板之奈米線裝置之一陣列之一奈米結構。
100‧‧‧塊狀發光二極體(LED)基板
102‧‧‧生長基板
110‧‧‧緩衝層
112‧‧‧經圖案化遮罩層
114‧‧‧奈米線核心
116‧‧‧作用層
118‧‧‧摻雜外殼
120‧‧‧核殼結構
200‧‧‧塊狀LED基板
202‧‧‧生長基板
204‧‧‧緩衝層
206‧‧‧處置基板/處置晶圓
207‧‧‧頂部表面
208‧‧‧基底層
209‧‧‧表面
212‧‧‧遮罩層
214‧‧‧核心
216‧‧‧作用層
218‧‧‧外殼
220‧‧‧奈米線
222‧‧‧底部導電接觸件
223‧‧‧底部電極層
230‧‧‧台面結構
232‧‧‧犧牲釋放層
233‧‧‧開口
234‧‧‧囊封材料層
235‧‧‧台面溝渠
236‧‧‧安定性層
240‧‧‧載體基板
242‧‧‧頂部電極層
243‧‧‧歐姆接觸層
244‧‧‧光阻劑層
246‧‧‧頂部電極
250‧‧‧奈米線裝置
252‧‧‧安定性支柱
270‧‧‧分級腔
272‧‧‧分級腔側壁
300‧‧‧接收基板
304‧‧‧靜電傳送頭/微裝置傳送頭
306‧‧‧傳送頭總成
307‧‧‧通孔
400‧‧‧接收基板
402‧‧‧接觸墊
1700‧‧‧顯示系統
1710‧‧‧處理器
1720‧‧‧資料接收器
1730‧‧‧顯示器
1740‧‧‧顯示驅動器
1800‧‧‧照明系統
1810‧‧‧電源供應器
1820‧‧‧接收介面
1830‧‧‧電力控制單元
1840‧‧‧光源
圖1係包含形成於一緩衝層上方之奈米線之一陣列之一塊狀LED基板之一橫截面側視圖圖解。
圖2A係根據本發明之一實施例之形成於包含奈米線之一陣列之一塊狀LED基板上方之底部導電接觸件之一陣列之一橫截面側視圖圖解。
圖2B係根據本發明之一實施例之形成於包含奈米線之一陣列之一塊狀LED基板上方之底部導電接觸件之一陣列之一橫截面側視圖圖解。
圖3係根據本發明之一實施例在奈米線之一陣列上方塗佈一囊封材料層之一橫截面側視圖圖解。
圖4係根據本發明之一實施例減小圖3之囊封材料層之一厚度以曝露各奈米線上之一底部導電接觸件之一橫截面側視圖圖解。
圖5係根據本發明之一實施例之形成於奈米線之一陣列上方之底部電極層之一陣列之一橫截面側視圖圖解。
圖6係根據本發明之一實施例之經形成穿過一囊封材料層之台面溝渠之一陣列之一橫截面側視圖圖解。
圖7係根據本發明之一實施例之形成於奈米線之陣列及底部電極層之陣列上方且在台面溝渠之陣列內之一犧牲釋放層之一橫截面側視圖圖解。
圖8係根據本發明之一實施例之形成於犧牲釋放層中之開口之一
陣列之一橫截面側視圖圖解。
圖9係根據本發明之一實施例之使用一安定性層接合至一載體基板之一處置基板之一橫截面側視圖圖解。
圖10係根據本發明之一實施例之在一處置基板之移除之後之奈米線台面結構之一陣列之一橫截面側視圖圖解。
圖11係根據本發明之一實施例之形成於奈米線台面結構之一陣列上方之一頂部電極層之一橫截面側視圖圖解。
圖12係根據本發明之一實施例之形成於形成在奈米線台面結構上方之一頂部電極層上方之一圖案化層之一橫截面側視圖圖解。
圖13係根據本發明之一實施例之在一頂部電極層之部分移除之後固持在一固定層中之奈米線裝置之一陣列之一橫截面側視圖圖解。
圖14係根據本發明之一實施例之在一犧牲釋放層之移除之後在一安定性層中之分級腔之一陣列內之奈米線裝置之一陣列之一橫截面側視圖圖解。
圖15係根據本發明之一實施例之一載體基板上之奈米線裝置之一陣列之一示意性俯視圖圖解。
圖16A至圖16E係根據本發明之一實施例將奈米線裝置自一載體基板傳送至一接收基板之靜電傳送頭之一陣列之一橫截面側視圖圖解。
圖17係根據本發明之一實施例之一顯示系統之一示意性圖解。
圖18係根據本發明之一實施例之一照明系統之一示意性圖解。
本發明之實施例描述奈米線裝置。舉例而言,奈米線之一陣列可生長於一基底層上,且使用一安定性層接合至一載體基板,其中經接合結構進一步經處理以形成準備好被拾取及傳送至一接收基板之奈米線裝置之一陣列。各奈米線裝置包含一囊封層材料,該囊封層材料
橫向包圍奈米線裝置中之複數個奈米線,使得該複數個奈米線嵌入於囊封材料內。以此方式,囊封材料可分佈在傳送及接合操作期間施加於奈米線裝置中之個別奈米線上的負載,且保持個別奈米線的完整性。囊封層材料可額外地提供用於形成與奈米線裝置中之複數個奈米線電連接之一單一底部電極之一表面。
雖然特定就奈米線LED裝置來描述本發明之一些實施例,但應瞭解,本發明之實施例並未如此受限,且某些實施例亦可應用至其中一基底層用作用於生長奈米線之一晶種或可充當一電流輸送層之其他基於奈米線的半導體裝置,諸如場效電晶體(FET)、二極體、太陽能電池及偵測器。
在多種實施例中,參考附圖來做出描述。然而,可在無此等具體細節之情況下或與其他已知方法及組態組合來實踐某些實施例。在以下描述中,闡述諸如特定組態、尺寸及程序等之許多具體細節以提供本發明之一透徹理解。在其他例項中,未特定詳細描述熟知半導體程序及製造技術,以免非必要地模糊本發明。貫穿本說明書對「一實施例」之引用意謂結合實施例所描述之一特定特徵、結構、組態或特性包含於本發明之至少一實施例中。因此,在貫穿本說明書之各處出現的片語「在一實施例中」不一定係指本發明之相同實施例。此外,可以任何適當方式,在一或多項實施例中組合特定特徵、結構、組態或特性。
如本文中使用之術語「橫跨」、「上方」、「至」、「在......之間」及「在......上」可係指一層相對於其他層之一相對位置。一層「橫跨」另一層、在另一層「上方」或在另一層「上」或接合「至」另一層,或與另一層「接觸」可與其他層直接接觸或可具有一或多個中介層。在層「之間」之一層可與該等層直接接觸或可具有一或多個中介層。
在一態樣中,本發明之實施例描述包含突出遠離一基底層之一
奈米線之奈米線裝置。舉例而言,奈米線可包括一核殼組態。由於奈米線之有效面積係由正交於基底層之表面(奈米線自該表面突出)之線的長度來決定,所以尤其在複數個奈米線突出遠離基底層時,有效面積的量可相對於基底層的可用水平面積而增加。此外,根據本發明之實施例的奈米線裝置可用於達成通過奈米線裝置之特定有效電流密度,其中有效電流密度與自基底層突出之奈米線的數目及奈米線的LED接面(例如,量子井)表面積成比例。舉例而言,可使用自基底層突出之一單一奈米線來達成最高有效電流密度。可藉由增加一奈米線裝置中之奈米線的數目來減小有效電流密度。根據本發明之實施例,對於低於其中有效電流密度之一逐漸增加可導致奈米線裝置之效率之一顯著增加之一特性「效率下降」的奈米線裝置而言,尤其係在低操作電流(例如,毫安培及更低的標度)及有效電流密度(例如,安培/平方釐米及更低的標度)下,可調整一奈米線裝置中之奈米線的數目,以達成與裝置之一特定效率關聯之一所要有效電流密度。
在另一態樣中,本發明之實施例描述其中使用一靜電傳送頭總成自一載體基板傳送一奈米線裝置且將該奈米線裝置接合至一接收基板之一奈米線裝置整合設計。根據本發明之實施例,將一拉入電壓施加至一靜電傳送頭以在一奈米線裝置上產生一夾持壓力且拾取奈米線裝置。已觀察到當裝置大小減小至低於真空夾盤設備之一特定臨界尺寸(諸如大約300μm或更小,或更特定言之大約100μm或更小)時可能難以或不可能使用真空夾盤設備產生足夠夾持壓力以拾取裝置。此外,根據本發明之實施例之靜電傳送頭可用於產生與真空夾盤設備相關聯之遠大於1atm之壓力之夾持壓力。舉例而言,根據本發明之實施例可使用2atm或更大,或甚至20atm或更大之夾持壓力。因此,在一態樣中,本發明之實施例提供藉由使用一靜電傳送頭總成以傳送且整合包含以奈米尺度製造自經製造具有一較大尺寸(諸如在微尺度)之
一基底層突出之奈米線之奈米線裝置而傳送且整合奈米線至先前不可能整合之應用中之能力。根據本發明之實施例,與基底層之一底部表面相對之基底層之一頂部表面(奈米線自該頂部表面突出)可用作用於一靜電傳送頭總成之一靜電傳送頭接觸奈米線裝置之一接觸區域。舉例而言,可以與一對應奈米線裝置之基底層之頂部表面類似之一尺度製造各靜電傳送頭。
在一些實施例中,如本文中使用之術語「微」結構或尺度可係指特定裝置或結構之描述性大小,例如寬度。在一些實施例中,「微」結構或尺度可為1μm至大約300μm,或在許多應用中100μm或更小之尺度。舉例而言,一奈米線裝置之一基底層或靜電傳送頭可具有以微尺度之一最大尺寸(例如,寬度)為特徵之一接觸表面。然而,應瞭解,本發明之實施例不必如此受限,且實施例之某些態樣可應用至較大微結構或尺度及可能較小大小尺度。在一些實施例中,如本文中使用之術語「奈米」結構或尺度可係指特定裝置或結構之描述性大小,例如,長度或寬度。在一些實施例中,「奈米」結構或尺度可為小於1μm之尺度。舉例而言,一奈米線之一最大寬度可係奈米尺度。然而,應瞭解,本發明之實施例不必如此受限,且實施例之某些態樣可應用至較大奈米結構或尺度。
在另一態樣中,本發明之實施例描述用於將奈米線裝置之一陣列安定於一載體基板上使得其等準備好被拾取及傳送至一接收基板之一結構。在一些實施例中,將奈米線裝置之陣列膠合至一安定性層中之安定性支柱之一陣列。根據本發明之實施例,自一安定性支柱拾取一奈米裝置所需之最小量拾取壓力可由形成安定性層之一黏著性接合材料與奈米線裝置之間之黏著強度判定。在一些實施例中,此可由各奈米線裝置上之底部電極與一對應安定性支柱之間之接觸面積判定。舉例而言,拾取一奈米線裝置必須克服之黏著強度與由一傳送頭產生
之最小拾取壓力有關,如方程式(1)中所提供:P1A1=P2A2 (1)其中P1係需由一傳送頭產生之最小夾持壓力,A1係一傳送頭接觸表面與奈米線裝置接觸表面之間之接觸面積,A2係一奈米線裝置之底部電極與安定性支柱之間之接觸面積,且P2係安定性支柱對底部電極之黏著強度。在一實施例中,藉由一傳送頭產生大於1大氣壓之一夾持壓力。舉例而言,各傳送頭可產生2大氣壓或更大或甚至20大氣壓或更大之一夾持壓力而無歸因於傳送頭之介電崩潰之短路。在一些實施例中,歸因於較小面積,在各奈米線上之底部電極與安定性支柱之間之接觸面積處實現高於由一傳送頭產生之夾持壓力之一壓力。根據本發明之一些實施例,奈米線裝置與安定性支柱之間之黏著性係由底部電極與安定性支柱之接觸面積以及用於將底部電極接合至安定性支柱之材料選擇而控制。
圖2A係根據本發明之一實施例之形成於包含奈米線之一陣列之一塊狀LED基板上方之底部導電接觸件之一陣列之一橫截面側視圖圖解。如所示,塊狀LED基板200可包含一處置基板206、生長於處置基板206上之一基底層208,及形成於基底層208之表面209上且突出遠離該表面209並穿過形成於形成在表面209上之一遮罩層212中之一開口陣列之奈米線220之一陣列。各奈米線220包含一核心214、一外殼218及介於核心與外殼之間之一作用層216。在一實施例中,遮罩層212可由氮化物(例如,SiNx)材料形成,且使用微影技術圖案化以形成開口,各核心214突出穿過該等開口。核心及外殼可具有相反摻雜。舉例而言,一n摻雜之核心214可由一p摻雜之外殼218包圍,或一p摻雜之核心可由一n摻雜之外殼包圍。作用層216可包含一或多層,例如藉由障壁層分離之一或多個量子井層。如圖2A中所繪示,一底部導電接觸件222形成於外殼218上。在一實施例中,底部導電接觸件222可
形成圍繞外殼218之一外殼。舉例而言,底部導電接觸件222可經形成鄰近鄰近作用層216之外殼218之部分。此可增加沿著奈米線220之表面之發射均勻性。
各奈米線220可由具有對應於光譜中之一特定區域之一能帶隙之多種化合物半導體形成。舉例而言,圖2A中繪示之奈米線可經設計用於紅色光(例如,620至750nm波長)、綠色光(例如,495至570nm波長)、藍色光(例如,450至495nm波長)或諸如黃色、橙色或紅外線之其他波長之發射。在以下描述中,描述用於基於GaN材料形成具有核殼組態之奈米線LED裝置之一陣列之例示性處理序列。雖然針對特定材料描述主要處理序列,但應瞭解,例示性處理序列可用於製造具有不同發射光譜之奈米線,且尤其在處理不同材料時預期特定修改。舉例而言,預期核心214及外殼218可包含基於II至VI族材料(例如,ZnSe)或包含III至V族氮化物材料(例如,GaN、AlN、InN、InGaN及其等之合金)及III至V族磷化物材料(例如,GaP、AlGaInP及其等之合金)之III至V族材料之一或多層。處置基板206可包含由諸如(但不限於)矽、SiC、GaAs、GaN及藍寶石之任何適當材料形成之一生長基板。
參考圖2A至圖2B,在一實施例中,塊狀LED基板200包含一處置基板206,該處置基板206包含由藍寶石形成且可係大約200μm厚之一生長基板202。由GaN形成之一緩衝層204生長於生長基板202上而至大約0.5μm至5μm之一厚度。在形成緩衝層204之後,於緩衝層204上生長一基底層208。在一實施例中,類似於核心214般摻雜基底層208以減小核心214之生長期間之缺陷且提供一電連接。舉例而言,基底層208及核心214可係一n摻雜之GaN材料。在一實施例中,基底層208係大約1μm厚且核心214係大約1μm至5μm高並具有至多1μm(諸如0.2μm至1μm)之一寬度。在一實施例中,沿著下伏GaN基底層208之c
平面生長而在一垂直方向上選擇性生長核心214。
在一實施例中,鄰近核心214之間自中心至中心之一間距足以分配足夠空間以執行用於形成底部導電接觸件222或台面溝渠之形成之微影圖案化技術,諸如一光阻劑剝離技術。在一實施例中,間距為大約1μm或更大,例如,為大約2.5μm。在形成核心214之後,除了繼續垂直生長以形成作用層216及殼層218外,修改生長條件以完成諸如m平面生長之橫向生長。作用層216可包含一或多個量子井及障壁層。外殼層218可具有與核心214相反之摻雜。舉例而言,在核心214經n摻雜之情況下,外殼層218經p摻雜。在一實施例中,外殼層218具有0.1μm至0.5μm之一厚度。在一實施例中,核心214及外殼層218兩者係由GaN形成。在一實施例中,當自上方觀看時,各奈米線220可符合一六邊形組態,其對應於m平面生長。
對於底部導電接觸件222,多種組態係可行的。在圖2A中繪示之一實施例中,一底部導電接觸件222形成於各奈米線220上方。在此一實施例中,底部導電接觸件222亦可部分形成於遮罩層212上且僅部分橫跨於鄰近奈米線220之間。在圖2B中繪示之一實施例中,複數個奈米線220可共用一單一底部導電接觸件222。在此一實施例中,底部導電接觸件222亦可形成於遮罩層212上且完全橫跨於鄰近奈米線220之間。
可使用諸如蒸鍍或濺鍍之多種沈積方法形成底部導電接觸件222。可藉由毯覆式沈積接著進行微影及蝕刻而形成底部導電接觸件222之圖案化,或可使用一光阻劑剝離技術形成底部導電接觸件222。在一實施例中,針對一光阻劑剝離技術,維持鄰近奈米線220之間之一中心至中心間隔以為圖案化光阻劑留出足夠空間。
底部導電接觸件222可由多種導電材料形成,包含金屬、導電氧化物及導電聚合物。在一實施例中,底部導電接觸件222可由諸如
ITO之一透明導電氧化物形成。在形成底部導電接觸件222之後,使結構退火以形成底部導電接觸件222與外殼218之間之一歐姆接觸。
現在參考圖3,根據本發明之一實施例在奈米線之陣列上方塗佈一囊封材料層234。如所繪示,囊封材料層234橫向包圍複數個奈米線使得奈米線嵌入於囊封材料內。囊封材料層234可由可對奈米線提供結構穩定性之多種材料形成。在一些實施例中,囊封材料層234係由對可見光譜透明且容許自個別奈米線220發射之光之透射之一材料形成。在一實施例中,囊封材料層234係由一熱固性材料形成,舉例而言,係由與固化期間10%或更小體積收縮或更特定言之固化期間約6%或更小體積收縮相關聯以免分層或引發奈米線上之過度壓力之一熱固性材料形成。例示性熱固性材料包含苯並環丁烯(BCB)及環氧樹脂。在一實施例中,囊封材料層234係旋塗或噴塗於奈米線之陣列上方。在塗覆囊封材料層234之後,使囊封材料層234部分固化,接著進行如圖4中所繪示之回蝕刻以曝露待形成之各奈米線裝置之複數個奈米線220上之一或多個底部導電接觸件222。舉例而言,可在部分固化囊封材料層234之後使用一乾式蝕刻技術執行回蝕刻。在所繪示之特定實施例中,一底部導電接觸件222由複數個奈米線共用。在其他實施例中,每一單獨底部導電接觸件222形成於各奈米線上方。回蝕刻可至少部分侵蝕經曝露之底部導電接觸件222。在一實施例中,在回蝕刻期間未完全蝕刻穿過底部導電接觸件222以便保持包圍奈米線220之歐姆接觸外殼。
現在參考圖5,底部電極層223之一陣列形成於奈米線220之陣列上方。如所繪示,底部電極層223沿著囊封材料層234之一底部表面橫跨且與一或多個底部導電接觸件222電接觸。底部電極層223可由多種導電材料形成,包含金屬、導電氧化物及導電聚合物。底部電極層223可由一單層或一層堆疊形成。底部電極層223可對可見波長光譜透
明。底部電極層223可包含反射由奈米線220發射之波長之一鏡面層。
在一實施例中,底部電極層223係由諸如ITO之一透明導電氧化物形成。在一實施例中,底部電極層223係由諸如鈀或NiAu之一金屬材料形成。在一實施例中,底部電極層223包含一鏡面層以反射自奈米線發射之波長。舉例而言,金、鋁或銀鏡面層可適合於反射紅色波長光譜,而一銀或鋁鏡面層適合於反射藍色或綠色波長光譜。在一實施例中,底部電極層包含一接合層以控制與安定性層之黏著強度。舉例而言,在安定性層係由苯並環丁烯(BCB)形成之情況下,可使用諸如金之一貴金屬。許多組態係可行的。因此,根據本發明之實施例,底部電極層可係一單層或層堆疊。
台面溝渠235之一陣列經形成穿過囊封材料層234,使得各台面溝渠橫向包圍複數個奈米線,如圖6中所繪示。如圖6中所示,台面溝渠235延伸穿過遮罩層212且至基底層208中,以形成由處置基板206上方之台面溝渠235之陣列所分離之台面結構230之一陣列。在一實施例中,在形成台面溝渠235之後,可使基板堆疊退火以固化囊封材料層234。
台面溝渠235至少部分延伸至基底層208中以界定台面結構230。舉例而言,在一實施例中,台面溝渠235部分延伸至一n摻雜之GaN基底層208中,但未延伸至一下伏GaN緩衝層204中。在另一例示性實施例中,台面溝渠235完全延伸穿過一n摻雜之GaN基底層208且部分或完全穿過一下伏GaN緩衝層204。
根據本發明之實施例,可以微尺度形成各台面結構230及待形成之對應奈米線裝置250的基底層208。舉例而言,參考圖15中繪示之奈米線裝置,各基底層208可具有以300μm或更小或更特定言之100μm或更小之一最大長度或寬度為特徵之一頂部表面207。在一實施例中,各基底層208具有以1至20μm之一最大長度或寬度為特徵之一頂
部表面207。
台面溝渠235之蝕刻可取決於台面溝渠235之側壁之所要角度而為濕式蝕刻或乾式蝕刻。在一實施例中,可使用諸如反應性離子蝕刻(RIE)、電子迴旋共振(ECR)、感應耦合電漿反應性離子蝕刻(ICP-RIE)及化學輔助離子束蝕刻(CAIBE)之乾式蝕刻技術。蝕刻化學可基於鹵素,含有諸如Cl2、BCl3或SiCl4之種類。
接著,一犧牲釋放層232可經形成於台面結構230之陣列上方,如圖7中所繪示。在一實施例中,犧牲釋放層232係由可使用蒸氣(例如,蒸氣HF)或電漿蝕刻容易且選擇性移除之一材料所形成。在一實施例中,犧牲釋放層係由氧化物(例如,SiO2)或氮化物(例如,SiNx)形成,其具有0.2μm至2μm之一厚度。在一實施例中,使用諸如濺鍍、低溫電漿增強型化學沈積(PECVD)或電子束蒸鍍之一相對低品質薄膜形成技術來形成犧性釋放層。在一實施例中,遮罩層212係由氮化物(例如,SiNx)形成,且犧牲釋放層232係由氧化物(例如,SiO2)形成。
如圖8中所繪示,開口233之一陣列經蝕刻穿過犧牲釋放層232以曝露各台面結構230之底部電極層223。如在以下描述中將更明瞭,開口233之寬度及犧牲釋放層232之厚度皆可對在形成安定性層之後之安定性支柱的尺寸有貢獻。
現在參考圖9,在一實施例中,一安定性層236經形成於犧牲釋放層232上方且經接合至一載體基板240。根據本發明之實施例,安定性層236可由一黏著性接合材料形成。在一實施例中,黏著性接合材料係諸如苯並環丁烯(BCB)或環氧樹脂之一熱固性材料。
在一實施例中,安定性層236經旋塗或噴塗於犧牲釋放層232上方,但可使用其他塗覆技術。在塗覆安定性層236之後,可預烘焙安定性層以移除溶劑。在預烘焙安定性層236之後,使用安定性層236將
處置晶圓206接合至載體基板240。在一實施例中,接合包含固化安定性層236。在安定性層236係由BCB形成之情況下,固化溫度不應超過大約350℃(其表示BCB開始降級之溫度)。根據本發明之實施例,無需達成安定性層之一100%完全固化。在一實施例中,使安定性層236固化至安定性層236將不再回流之一足夠固化百分比(例如,對於BCB而言係70%或更大)。此外,已觀察到部分固化之BCB可擁有與載體基板240及犧牲釋放層232之足夠黏著強度。在一實施例中,安定性層可經充分固化以在犧牲釋放層釋放操作期間充分抵抗蝕刻。
如所繪示,安定性層236填充台面溝渠235以形成分級腔側壁272,且填充犧牲釋放層232內之開口233以形成安定性支柱252。安定性支柱252可具有小於一對應奈米線裝置250之基底層208之最大寬度之一最大寬度。舉例而言,包含10μm×10μm寬之基底層之一例示性奈米線裝置250可由1μm×1μm寬之安定性支柱或2μm×2μm寬之安定性支柱支撐。然而,應瞭解,此等尺寸為例示性,且許多組態係可行的。
在將處置基板206接合至載體基板240之後,如圖10中所繪示般移除處置基板206。處置基板206之移除可取決於生長基板202及選用蝕刻停止層或緩衝層204之材料選擇而藉由包含雷射剝離(LLO)、碾磨及蝕刻之多種方法來完成。在移除處置基板206之後,犧牲釋放層232之部分可突出於台面結構230之各者之基底層208之一經曝露頂部表面上方。替代地,可在移除處置基板之後薄化基底層208,從而導致犧牲釋放層232之部分突出於薄化基底層208之一經曝露頂部表面上方。
在其中處置基板206包含由藍寶石形成之一生長基板202之一實施例中,可使用其中使用諸如一Nd-YAG雷射或KrF準分子雷射之一紫外光雷射照射一202/204介面之LLO完成移除。GaN緩衝層204中在
與透明生長基板202之介面處之吸收導致介面之局部加熱,進而導致介面GaN處至液體Ga金屬及氮氣之分解。一旦照射所要區域,便可藉由在一烤盤上再熔化Ga而移除透明藍寶石生長基板202。在移除生長基板之後,可移除GaN緩衝層204,從而導致基底層208之一所要厚度。可使用在上文關於台面溝渠235描述之適當乾式蝕刻技術之任一者以及CMP或其等之一組合執行緩衝層204之移除。
現在參考圖11,在移除處置基板206之後,可在基底層208之頂部表面207上方形成一頂部電極層242。在一些實施例中,在形成頂部電極層242之前,可視情況形成一歐姆接觸層243以與基底層208歐姆接觸。在一實施例中,歐姆接觸層243可係一金屬層。在一實施例中,歐姆接觸層243係用於GaAs或AlGaInP系統之一薄GeAu層。在一實施例中,歐姆接觸層243係用於GaN系統之一薄NiAu或NiAl層。舉例而言,歐姆接觸層243可係50埃厚。在所繪示之特定實施例中,歐姆接觸層243未直接形成於奈米線220上方。舉例而言,一金屬歐姆接觸層可潛在地減小光發射。簡要參考圖15中之俯視示意圖圖解,在一實施例中,歐姆接觸層243形成圍繞奈米線220之環或以其他方式形成橫向包圍奈米線220之一柵格。
頂部電極層242可由多種導電材料形成,包含金屬、導電氧化物及導電聚合物。在一實施例中,使用諸如蒸鍍或濺鍍之一適當技術形成電極層242。在一實施例中,電極層242係由一透明電極材料形成。電極層242亦可係諸如銦錫氧化物(ITO)之一透明導電氧化物(TCO)。電極層242亦可係一或多個金屬層及一導電氧化物之一組合。在一實施例中,電極層242係大約600埃厚之ITO。在一實施例中,在形成電極層242之後,使基板堆疊退火以產生電極層與台面結構230之陣列之頂部表面207之間之一歐姆接觸。在囊封材料層234及安定性層236係由BCB形成之情況下,退火溫度可低於大約350℃,BCB在該點處降
級。在一實施例中,在200℃與350℃之間或更特定言之在大約320℃下執行退火達大約10分鐘。
現在參考圖12,在一實施例中,將諸如一光阻劑之一圖案化層塗覆於頂部電極層242上方。在一實施例中,一光阻劑層244經旋塗使得光阻劑層244之一頂部表面完全覆蓋在經填充台面溝渠235位置處介電層242之凸起部分。現在參考圖13,在一實施例中,使用一適當濕溶劑或電漿灰化技術剝除光阻劑層244直到移除經填充台面溝渠235位置上方之電極層242,從而曝露台面結構之間之犧牲釋放層232,導致頂部電極246之一陣列之形成。接著,可完全剝除任何剩餘光阻劑層244,導致嵌入於一犧牲釋放層232中且由安定性支柱252之一陣列支撐之橫向分離奈米線裝置250之一陣列。此刻,所得結構仍穩健用於處置及清潔操作以準備基板用於後續犧牲釋放層移除及靜電拾取。
仍參考圖13,各奈米線裝置250上之頂部電極246覆蓋各奈米線裝置250之各基底層208之實質上整個頂部表面207。在此一組態中,頂部電極246覆蓋實質上最大可用表面積以提供用於與靜電傳送頭接觸之一大平坦表面,如圖16A至圖16E中詳細描述。此可容許靜電傳送頭總成之一些對準公差。
在形成離散且橫向分離之奈米線裝置250之後,可移除犧牲釋放層232。圖14係根據本發明之實施例之在犧牲釋放層之移除之後一安定性層內之奈米線裝置250之一陣列之一橫截面側視圖圖解。可使用諸如HF蒸氣或CF4或SF6電漿之一適當蝕刻化學以蝕刻SiO2或SiNx犧牲釋放層232。在經繪示之實施例中,犧牲釋放層232完全導致各奈米線裝置250由一分級腔270內之一安定性支柱252支撐。在此一實施例中,奈米線裝置與安定性支柱252之間之黏著性可由底部電極層223與安定性支柱252之接觸面積以及用於接合底部電極及安定性層之材料選擇而控制。舉例而言,接觸電極層223堆疊中之諸如金之一接合層
可與安定性支柱252直接接觸。以此方式,底部電極層223與安定性支柱252接觸之表面積及表面積之輪廓部分負責將奈米線裝置250固持於安定性層內之適當位置中,且亦促成自載體基板拾取奈米線裝置250必須克服之黏著力。若任何奈米線裝置250與安定性支柱252之間之一黏著接合破裂,則分級腔側壁272可額外地幫助使奈米線裝置250之陣列保持於適當位置中。
圖15係根據本發明之一實施例之承載於一載體基板240上之奈米線裝置250之一陣列之一示意性俯視圖圖解。在經繪示之例示性實施例中,各奈米線裝置包含基底層208上之複數個奈米線220。分級腔側壁272可橫向包圍各奈米線裝置250之基底層208及一或多個奈米線220。一或多個安定性支柱252支撐各奈米線裝置250。在一實施例中,各奈米線裝置包含可具有以300μm或更小或更特定言100μm或更小之一最大長度或寬度為特徵之一頂部表面207之一基底層208。在一實施例中,各基底層208具有以1至20μm之一最大長度或寬度為特徵之一頂部表面207。如繪示,基底層之頂部表面207大約為奈米線裝置250之最大寬度。
圖16A至圖16E係根據本發明之一實施例將奈米線裝置250(啟動可為奈米線LED裝置)自載體基板240傳送至一接收基板400之靜電傳送頭304之一陣列之橫截面側視圖圖解。圖16A係由基板300支撐且定位於安定於載體基板240上之奈米線裝置250之一陣列上方之微裝置傳送頭304之一陣列之一橫截面側視圖圖解。接著,使奈米線裝置250之陣列與傳送頭304之陣列接觸,如圖16B中所繪示。如繪示,傳送頭304之陣列之間距為奈米線裝置250之陣列之間距之一整數倍數。將一電壓施加至傳送頭304之陣列。可自透過通孔307與傳送頭之陣列電連接之一傳送頭總成306內之工作電路施加電壓。接著,使用傳送頭304之陣列拾取奈米線裝置250之陣列,如圖16C中所繪示。接著,放置
奈米線裝置250之陣列使之與一接收基板400上之接觸墊402(例如,金、銦、錫等)接觸,如圖16D中所繪示。接著將奈米線裝置250之陣列釋放至接收基板400上之接觸墊402上,如圖16E中所繪示。舉例而言,接收基板可係(但不限於)一顯示基板、一照明基板、具有諸如電晶體或IC之功能裝置之一基板或具有金屬重佈線之一基板。
根據本發明之實施例,可在拾取、傳送及接合操作期間將熱施加至載體基板、傳送頭總成或接收基板。舉例而言,可在拾取及傳送操作期間透過傳送頭總成施加熱,其中熱可或可不使奈米線裝置接合層液化。傳送頭總成可在接合操作期間對接收基板額外地施加熱,該熱可或可不使奈米線裝置或接收基板上之接合層之一者液化以導致接合層之間之擴散。
可以多種順序執行施加電壓以在奈米線裝置之陣列上產生一夾持壓力之操作。舉例而言,可在使奈米線裝置之陣列與傳送頭陣列接觸之前、在使奈米線裝置與傳送頭陣列接觸時或在使奈米線裝置與傳送頭陣列接觸之後施加電壓。亦可在施加熱至接合層之前、之時或之後施加電壓。
在傳送頭304包含雙極電極之情況下,可跨各傳送頭304中之一對電極施加一交流電壓使得在將一負電壓施加至一電極、將一正電壓施加至該對中之另一電極(且反之亦然)之一特定時間點產生拾取壓力。可使用包含以下各者之多種方法完成自傳送頭304釋放奈米線裝置之陣列:關閉電壓源;降低跨該對電極之電壓;改變AC電壓之一波形;及使電壓源接地。
圖17繪示根據一實施例之一顯示系統1700。顯示系統容置一處理器1710、資料接收器1720、一顯示器1730及一或多個顯示驅動器IC 1740(其可係掃描驅動器IC及資料驅動器IC)。資料接收器1720可經組態以無線或有線地接收資料。可以許多無線標準或協定之任一者實施
無線,包含(但不限於)Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE 802.20、長期演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍芽、其等之衍生物以及指定為3G、4G、5G及超過5G之任何其他無線協定。一或多個顯示驅動器IC 1740可實體且電耦合至顯示器1730。
在一些實施例中,顯示器1730包含根據上文描述之本發明之實施例形成之一或多個奈米線裝置250。取決於其之應用,顯示系統1700可包含其他組件。此等其他組件包含(但不限於)記憶體、一觸控螢幕控制器及一電池。在多種實施方案中,顯示系統1700可係一電視機、平板電腦、電話、膝上型電腦、電腦監視器、獨立式終端機服務台(kiosk)、數位相機、手持式遊戲主控台、媒體顯示器、電子書顯示器或大面積標牌顯示器。
圖18繪示根據一實施例之一照明系統1800。照明系統容置一電源供應器1810,該電源供應器1810可包含用於接收電力之一接收介面1820及用於控制待供應至光源1840之電力之一電力控制單元1830。可自照明系統1800外部或自視情況包含於照明系統1800中之一電池供應電力。在一些實施例中,光源1840包含根據上文描述之本發明之實施例形成之一或多個奈米線裝置250。在多種實施方案中,照明系統1800可係內部或外部照明應用,諸如廣告牌照明、建築物照明、街道照明、燈泡及燈。
在利用本發明之多種態樣中,熟習此項技術者將明瞭,上文實施例之組合或變動可用於製造且傳送奈米線裝置。雖然以專用於結構特徵及/或方法行為之語言描述本發明,但應瞭解,隨附申請專利範圍中界定之本發明不一定限於經描述之特定特徵或行為。經揭示之特定特徵及行為代替性地理解為可用於繪示本發明之本發明之尤其得體
實施方案。
207‧‧‧頂部表面
208‧‧‧基底層
212‧‧‧遮罩層
222‧‧‧底部導電接觸件
223‧‧‧底部電極層
234‧‧‧囊封材料層
236‧‧‧安定性層
240‧‧‧載體基板
243‧‧‧歐姆接觸層
246‧‧‧頂部電極
250‧‧‧奈米線裝置
252‧‧‧安定性支柱
270‧‧‧分級腔
272‧‧‧分級腔側壁
Claims (20)
- 一種奈米線裝置,其包括:一基底層,其包含一第一表面及與該第一表面相對之一第二表面,其中該第二表面具有1μm至300μm之一最大橫向尺寸;複數個奈米線,其等在該基底層之該第一表面上且突出遠離該第一表面,其中各奈米線包含一核心、一外殼及在該核心與該外殼之間之一作用層;一囊封材料,其橫向包圍該複數個奈米線,使得該複數個奈米線嵌入於該囊封材料內;一頂部電極層,其在該基底層之與該第一表面相對之該第二表面上且與各奈米線之該核心電接觸;及一底部電極層,其與各奈米線之該外殼電接觸。
- 如請求項1之奈米線裝置,其中該頂部電極層係對可見波長光譜透明或半透明。
- 如請求項1之奈米線裝置,其中該底部電極層包含一鏡面層。
- 如請求項1之奈米線裝置,其中該底部電極層包含由一貴金屬形成之一接合層。
- 如請求項1之奈米線裝置,進一步包括在該複數個奈米線之該等外殼上且包圍該等外殼的一或多個底部導電接觸件,其中該底部電極層與該一或多個底部導電接觸件電接觸,且其中該底部電極層沿著該囊封材料之一底部表面橫跨。
- 如請求項1之奈米線裝置,其中該第二表面具有1μm至20μm之一最大橫向尺寸。
- 如請求項1之奈米線裝置,進一步包括該基底層上之一經圖案化遮罩層,其中該複數個奈米線之該等核心延伸穿過該經圖案化 遮罩層中之對應開口。
- 如請求項1之奈米線裝置,其中該囊封材料包括一熱固性材料。
- 如請求項7之奈米線裝置,其中該囊封材料係對該可見波長光譜透明。
- 一種半導體結構,其包括:一載體基板;一安定性層,其在該載體基板上;一奈米線裝置陣列,其在該安定性層上:其中各奈米線裝置包括:一基底層,其包含一第一表面及與該第一表面相對之一第二表面,其中該第二表面具有1μm至300μm之一最大橫向尺寸;複數個奈米線,其等在該基底層之該第一表面上且突出遠離該第一表面,其中各奈米線包括一核心、一外殼及在該核心與該外殼之間之一作用層;一囊封材料,其橫向包圍該複數個奈米線,使得該複數個奈米線嵌入於該囊封材料內;一頂部電極層,其在該基底層之與該第一表面相對之該第二表面上且與各奈米線之該核心電接觸;及一底部電極層,其與各奈米線之該外殼電接觸。
- 如請求項10之半導體結構,進一步包括橫跨在該安定性層與該奈米線裝置陣列之間之一犧牲釋放層。
- 如請求項11之半導體結構,其中該安定性層包括一熱固性材料。
- 如請求項11之半導體結構,其中該安定性層包括分級腔之一陣列,且該奈米線裝置陣列係在該分級腔陣列內。
- 如請求項11之半導體結構,其中該安定性層包括安定性支柱之一 陣列,且該奈米線裝置陣列係由該安定性支柱陣列支撐。
- 如請求項14之半導體結構,其中各奈米線裝置之該底部電極層經接合至一對應安定性支柱。
- 一種形成一奈米結構之方法,其包括:形成一囊封材料使之橫向包圍奈米線之一陣列且在一處置基板上方,使得該奈米線陣列嵌入於該囊封材料內,其中該奈米線陣列在該處置基板上之一基底層上且突出遠離該基底層;蝕刻台面溝渠之一陣列使之穿過該囊封材料及該基底層以形成台面(mesa)結構之一陣列,其中各台面溝渠包圍複數個奈米線,且各台面結構具有1μm至300μm之一最大橫向尺寸;在該囊封材料上方且在該台面溝渠陣列內沈積一犧牲釋放層;使用一安定性層將該處置基板接合至一載體基板,其中該犧牲釋放層係在該奈米線陣列與該安定性層之間;及移除該處置基板。
- 如請求項16之方法,其中橫向包圍奈米線之一陣列且在該處置基板上方形成該囊封材料包括,在該奈米線陣列上方塗佈一第一熱固性材料層且減小該第一熱固性材料層之一厚度,以曝露該等奈米線之各者上之一底部導電接觸件。
- 如請求項17之方法,進一步包括在該等奈米線之各者之該底部導電接觸件上沈積一底部電極。
- 如請求項16之方法,其中使用該安定性層將該處置基板接合至該載體基板包括:在該犧牲釋放層上方塗佈一第二熱固性材料;及固化該第二熱固性材料。
- 如請求項16之方法,進一步包括使用一蒸氣或電漿蝕刻技術蝕 刻該犧牲釋放層,以自該奈米線陣列與該安定性層之間移除該犧牲釋放層。
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