TWI541923B - 具有加熱旋轉基板支撐件的晶圓處理裝置 - Google Patents
具有加熱旋轉基板支撐件的晶圓處理裝置 Download PDFInfo
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Description
本發明係關於半導體處理之領域,且更明確地係關於一種包含加熱旋轉基板支撐件之半導體處理裝置。
在一垂直熱處理熔爐/反應器中同步處理複數個半導體晶圓時將出現問題,即如何使疊積入一晶圓舟中之所有晶圓,可在橫跨其各別之表面區域上,皆歷經大致相同之處理條件。此一處理條件係曝露處理氣體。為提升此曝露之均勻性,一垂直熔爐通常裝設有一舟旋轉機構,可在處理期間旋轉該晶圓舟,以均化可與晶圓接觸之處理氣體流
中的不均勻。另一處理條件係晶圓溫度。為使整批之基板達成均勻之處理結果,較佳地可藉由設置於一處理室側壁附近、及一處理室頂壁附近之加熱構件,大致均勻地加熱其每一晶圓達一共同溫度。尤其關於該晶圓舟中之上方晶圓,晶圓對晶圓溫度均勻性大體上並非一重大問題,且同時可藉前述之舟旋轉來加強(因熔爐結構之非對稱性所造成的)晶圓內溫度均勻性。然,在一垂直熱處理熔爐/反應器中,已證實該晶圓舟中之下方基板溫度難以控制。這一部份係因該基板接近位於相對較冷之熔爐下方門區。為舒緩其位置效應,由下方支撐該晶圓舟之一臺座可設有額外之加熱構件,用於加熱下方晶圓。儘管這種加熱構件可使橫跨該批次晶圓之晶圓對晶圓溫度均勻性提高,然該等加熱構件及/或其所產生之加熱輪廓中的任何不均勻,皆將輕易地影響下方晶圓之晶圓內溫度均勻性。
為克服此問題,國際專利申請案第WO 2004/008491號(Dubois等)建議,將垂直熔爐裝設一磁性耦合晶圓旋轉系統,用於使晶圓舟相對於靜止臺座旋轉。該旋轉機構包含一驅動軸,在該臺座內側垂直地延伸。該驅動軸之下方末端係磁性耦合至一旋轉馬達,且同時存駐於該臺座一頂部中之上方末端係磁性耦合至一支撐件,該支撐件係連接至該晶圓舟且該支撐件其本身係支撐於該臺座上。該馬達之旋轉運動可因此磁性地傳遞至該驅動軸(之下方末端)上,且由該驅動軸(之上方末端)至該晶圓舟之支撐件上。使用時,該舟係相對於該臺座旋轉,以均化加熱元件中之不均
勻對下方基板溫度所造成之任何影響。顯著地,專利申請案第WO’491號係關於該臺座與該舟之間的一軸承機構呈靜止。可了解到,這種軸承機構係晶圓旋轉機構之一主要組件。此外,該機構並非一般組件,特別係因該軸承機構將存駐於熔爐之高溫處理環境,其中充滿可污染與侵襲該軸承而大幅縮短其使用壽命之化學反應物。因此,專利申請案第WO’491號似僅揭示一種純理論且無法致用之前述問題解決方案。
本發明之目的係提供一種半導體基板處理裝置,及一種即使結合於支撐基板用基板支撐件中之加熱元件(所產生加熱輪廓)具有不均勻性,仍允許均勻地加熱一個或更多基板之方法。
為此,本發明之一第一構想係指一種半導體基板處理裝置。該裝置包含一基板支撐總成,包括可定義一外支撐表面以將一基板或基板托架支撐其上之一基板支撐件,及一加熱器,包括設置於該基板支撐件內且在該支撐表面下方、與其大致平行延伸之一熱散逸部。該基板支撐件係環繞著延伸貫穿該支撐表面之一旋轉軸線以可旋轉式安裝,使該支撐表面可相對於該加熱器之熱散逸部旋轉。
本發明之一第二構想係指一種方法。該方法包含,提供依據本發明第一構想之一半導體處理裝置。該方法尚包含,提供至少一基板,及可能地經由中介之一基板托架來
支撐該至少一基板於該基板支撐件之支撐表面上。該方法亦包含,同步地(i)加熱該加熱器,以使該加熱器之熱散逸部散逸熱,及(ii)使該基板支撐件環繞其旋轉軸線旋轉,以使其支撐表面上所支撐之該至少一基板相對於下方之該加熱器熱散逸部旋轉。
依據本發明之方法及裝置係以一基板支撐總成為特點,其包含一可旋轉基板支撐件結合一整合或內部加熱器。該基板支撐件、及(直接或經由中介之一基板托架)支撐其上之任何基板,可環繞該基板支撐件之旋轉軸且相對於該加熱器旋轉。這種旋轉可均化該加熱器(加熱輪廓)中之不均勻效應,且提升該等獲支撐基板之基板內溫度均勻性。依據本發明之裝置及方法可應用至,各種半導體處理裝置,特別地包含垂直熱分批式熔爐、及包括一可旋轉基板支撐件或支承基座之單一基板處理裝置;可參見美國專利申請案第US 2010/0224130號(Smith等)之裝置,即屬後者型式之一範例。
相較於國際專利申請案第WO 2004/008491號(Dubois 等)之前述垂直分批式熔爐,本揭示裝置展現一明顯改良。如上所述者,專利申請案第WO’491號之一問題在於,一晶圓舟係相對於包括一靜止加熱器之一靜止臺座旋轉。這需要設置於該舟與該臺座之間的一軸承,該軸承因此位於該熔爐之反應空間中。緣是,該軸承將與該晶圓舟中之(下方)基板面對大體上相同之處理條件,如此將對其作動產生負面影響。在提出之裝置中,由於該基板支撐件或臺座本
身可旋轉,因此該基板支撐件之支撐表面與存駐於其上之基板托架之間,無需任何軸承。反而,該裝置可使用,允許該基板支撐件與固定環境之間相對旋轉的一軸承,但該軸承可適當地設置於該反應空間外側。
在該裝置之一較佳具體實施例中,該加熱器可相關於該基板支撐件之旋轉軸線,以不可旋轉式安裝。亦即,當在該裝置處於一完全組立、作動狀態下,該加熱器不可環繞該旋轉軸線旋轉(如以下將闡明者,一不可旋轉式安裝加熱器實際上可在當該裝置處於一部份組立、未作動狀態下,呈現可旋轉式安裝)。一不可旋轉或靜止加熱器配置,大體上可簡化該裝置之結構。譬如在一電加熱器之情況下,可避免需要連接該加熱器與電源供應器用之高功率滑動/電刷電氣接觸子。反而,可使用固定且耐磨連接件。緣是,可更輕易且更經濟地建構一不可旋轉式安裝加熱器,其在使用壽命期間更可靠且較不需維護。
又,一不可旋轉式安裝加熱器架構並非唯一可想出之架構。例如,在該裝置之另一具體實施例中,該加熱器亦可較佳地環繞該基板支撐件之旋轉軸以可旋轉式安裝,但該裝置亦可配置成,使該加熱器與該基板支撐件在作動期間,無法具有大致相同之非零角速度。亦即,該加熱器可調整成適應於,在使用期間旋轉,但僅依高於或低於該基板支撐件角速度之一角速度,這實際上意謂該基板支撐表面與該加熱器之間具相對運動。為此,該加熱器之旋轉可譬如藉由一齒輪機構或傳動裝置、或著經由一流體(帶動)
耦接,而與該基板支撐件者相耦接。另一選擇為,可與該基板支撐件相獨立地驅動該加熱器、即無需可在二部件之間傳遞動力/旋轉運動之一該二部件機械耦接。
可由以下結合附屬圖式所作之某些闡述用且非限制發明用特定發明具體實施例詳細說明,來更充分地了解本發明之這些及其他特點與優點。
第1圖及第2圖係以剖面側視圖概略圖示出,依據本發明之一垂直熱處理熔爐/反應器1第一解說用具體實施例的一上方部。第3圖至第5圖係以剖面正視圖與側視圖概略圖示出,依據本發明之一垂直熱處理熔爐/反應器1第二變型解說用具體實施例的一上方部。以下將以一般術語及參考圖式來說明該二具體實施例之結構。
一般而言,除將於稍後說明之基板支撐總成30以外,依據本發明之一垂直熱處理熔爐/反應器1可呈一習知設計。可譬如呈一單(或雙,未顯示)管型,且包含一大體上鐘形罩型反應管10。反應管10可具有譬如圓形或多邊形等一大體上管狀剖面外型,且沿一中心軸線L延伸。關於製作材質,反應管10可由石英、碳化矽、矽、或其他適當耐熱材料製成。反應管10可界定出一反應室12,該反應室係定義出,可在其中對基板譬如施加熱退火或沉積處理作業等處理之一反應空間14。可藉譬如由一電源供應器(未顯示)供應電力之一電阻式加熱盤管18等一加熱構件包圍
反應管10,以加熱反應空間14中所收容之基板。加熱構件18可緊固至,圍繞反應管10之一隔熱套筒16。在其下方開放末端處,反應管10可支撐於一典型不鏽鋼凸緣20上,該凸緣定義一中心熔爐開口22,供一晶圓舟24由此進入及/或退出反應室12。
晶圓舟24可固定地安裝於一基板支撐總成30之一基板支撐件或臺座32的一支撐表面34上。該晶圓舟可呈一習知設計,且包含複數個垂直相互間隔狹槽26,以均等地固持眾多半導體晶圓28,其中每一圖式各僅顯示出一該等晶圓。
為使晶圓舟24在處理期間旋轉,晶圓舟24設置所在之基板支撐件32可環繞熔爐1之中心軸線L以可旋轉式安裝。基板支撐總成30可尚包含一加熱器50,至少部份地在基板支撐件32內且於支撐表面34下方延伸,以輔助加熱晶圓舟24中之下方基板28。為容許基板支撐件32相對於加熱器50旋轉,以均化該加熱器(加熱曲線)中之不均勻效果,可將基板支撐總成30配置成,使基板支撐件32環繞其旋轉軸線L之一旋轉包含基板支撐表面34與加熱器50之間的相對運動。這種架構可依不同方式達成,如分別由第1圖至第2圖、及第3圖至第5圖之變型具體實施例圖示者,以下將依序闡述。
首先請參考第1圖至第2圖具體實施例之配置。基板支撐件32可包含一圓柱形容器36,其環繞旋轉軸線L定心。容器36可包含一大致平坦底壁36a、一圓筒套型側壁
36b、及一大致平坦頂壁36c,該等壁可互連以形成容器36。頂壁36c可提供外部面朝上支撐表面34,旋轉軸線L可延伸貫穿該表面、且較佳地與其正交。
延伸於底壁36a與頂壁36c之間的容器36本體可定義一內部空間,其可至少部份地充滿譬如Kanthal公司Fibrothal®之Fibrothal F17等一隔熱材料38。隔熱材料38可作為一門板42及凸緣20等二者之一熱屏蔽,且有助於減少經由熔爐1下方部造成之熱損失。
隔熱材料38可不直接承載於容器36之底壁36a上,改為支撐於設置在容器36內之一支撐板39上、位於該容器底壁36a正上方且免於其約束。為達成這種「浮動結構」,容器36之底壁36a可設有一中空、大致圓筒套型驅動軸37,其定心於旋轉軸線L上。驅動軸37可自底壁36a朝下突出,且定義出可貫穿其之一軸向通路37a。支撐板39可相似地設有一大致圓筒套型支撐軸39a,自支撐板39朝下突出。支撐軸39a可與驅動軸37同軸地延伸,且定義出可貫穿支撐板39之一通路。一容器與加熱器襯套間軸承44b可設於驅動軸37與支撐軸39a之間,使軸承44b嚙合驅動軸37之一內周邊(或至少置於驅動軸軸向通路37a內)、及支撐軸39a之一外周邊。軸承44b可支承或支撐該支撐板39,且輔助容器36環繞其旋轉。
圓柱形容器36可連接至、且支撐於基板支撐總成30之一底座總成上,該總成可包含熔爐1之一門板或密封蓋42。圓柱形容器36可藉一軸承44a,以可旋轉式安裝於該
底座總成42上,該軸承如同軸承44b,可呈譬如一滾珠、流體、或磁性軸承等任何適當型式。軸承44a、44b二者較佳地可為定義出圓形、同軸座圈之滾珠軸承。軸承44a較佳地可在容器36之一下方端(即,基板支撐表面34之一末梢端)處與其相連接,使軸承44a大致設置於基板支撐件32下方,且與支撐於支撐表面34上之基板28所歷經之一處理氣體環境相屏蔽。在描述之具體實施例中,軸承44a係與突出自容器36底壁36a之驅動軸37的一外周邊相嚙合。圓柱形容器36因此可相對於門板42(在軸承44a上)及支撐板39(在軸承44b上)二者旋轉。
如上所述者,基板支撐件32可尚容置一加熱器或加熱元件50。加熱器50大體上可包括一熱散逸/生成部54,配置成可散逸/生成基板支撐件32內側需求之熱,及一連接部52,連接至熱散逸部54,以將能量自基板支撐件32外側傳遞至該部。加熱器50可呈任何適當型式。例如,可配置成譬如藉一已加熱流體傳導或循環,將熱傳遞至基板支撐件32中。然,在一較佳具體實施例中,加熱器50可為一電阻式加熱器。
在第1圖及第2圖之具體實施例中,一電阻式加熱器50係與隔熱材料38呈一固定靜止關係設置。該加熱器之熱散逸部54可包含一個或更多電阻式加熱盤管,且當由中心軸線L觀看時,該等盤管係在位於該容器頂壁36c下方、大致與其平行且相鄰(譬如相距25公分之一距離內、且較佳地10公分之一距離內)之一平面上,沿徑向朝外延伸。
熱散逸部54較佳地可延伸橫跨,大致相等於支撐表面34區域之一區域,以橫跨支撐於該表面之晶圓舟24中(下方)晶圓28整個表面進行加熱。
為使該等下方晶圓之溫度均勻性進一步最佳化,加熱器50可定義超過一個可單獨控制加熱區。每一加熱區可各與僅在一部份基板支撐表面34下方延伸之加熱器50一(次)加熱散逸部、譬如一電阻式加熱盤管相結合。例如,一第一區在支撐表面34之一中心區間下方延伸,且一第二區可在支撐表面34之一外部區間下方延伸。在另一具體實施例中,一第一區可在支撐表面34之一第一切線延伸區間上方延伸,且一第二區可在支撐表面34之一第二切線延伸區間上方延伸,
為了支撐,加熱器50之熱散逸部54可承載於容器36中之隔熱材料38上方。加熱器50之連接部52可提供進出熱散逸部54盤管之電導線、較佳地為每盤管一對導線,以允許單獨地控制每一相連結加熱區。該連接部可在該等加熱盤管之一中心處連接至熱散逸部54,且自該處沿中心軸線L朝下延伸,貫穿其嵌入所在之隔熱材料38,並進入支撐板39之支撐軸39a中。在此,連接部52可安裝、或終結於一栓塞56中,該栓塞可與支撐軸39a之下方末端固定地整合於一體。請了解到,加熱器50之連接部52可較佳地無熱散逸/生成。
上述中已提出,該底座總成包含熔爐1門板42。實際上,可額外地包括一可動式裝載器或支撐臂(未顯示)。該
裝載器臂可設置於門板42下方,以支撐該門板、及基板支撐件32,且允許分別在一處理作業起始與結束時,將基板支撐件32抬升入與降下離開熔爐1之反應室12。該裝載器臂可包括一中心承窩,配置成收容支撐軸39a之下方末端,該支撐軸包含在加熱器50連接部52下方末端處整合入其中之栓塞56。該承窩較佳地可配置成作為一制動裝置,以防止獲收容栓塞56環繞旋轉軸線L旋轉。緣是,當門板42支撐於該裝載器臂上時,門板42與支撐板39可依一固定靜止關係固持,且同時基板支撐件32係以可旋轉式安裝於該二者之間。為使基板支撐件32之圓柱形容器36環繞其旋轉軸線L旋轉,該底座總成可額外地包含一馬達驅動裝置,其可整合於該裝載器臂中。該馬達驅動裝置可嚙合圓柱形容器36之驅動軸39a,以一同旋轉該驅動軸、及支撐於其上之晶圓舟24。該底座總成,及包含支撐板39、隔熱材料38、及加熱器50之其餘熔爐1固定、不可旋轉式安裝構造,將在基板支撐件32旋轉期間,仍保持靜止。
現在請參考第3圖至第5圖,其圖示出基板支撐總成30之一變型具體實施例。第二解說用具體實施例不同於第1圖至第2圖中者在於,隔熱材料38係與基板支撐件32之容器36呈一靜態關係,這需要加熱器50自我支撐,如以下將闡述者。
在第3圖至第5圖之具體實施例中,延伸於底壁36a與頂壁36c之間的容器36本體可定義二本體部份。鄰近頂
壁36c之一第一本體部份可定義一內部空間,用於收容加熱器50之熱散逸部54。鄰近底壁36a之一第二本體部份可定義環繞旋轉軸線L之一內部環形空間,可至少部份地充滿隔熱材料38。可由第3圖至第5圖清楚看出,熔爐1之第二具體實施例並未包含一支撐板39來支撐隔熱材料38。反而,隔熱材料38係直接承載於容器36之底壁36a上,以與其呈一固定、靜止關係。亦即,當容器36旋轉時,隔熱材料38將與其一同運動。
為容許容器36相對於加熱器50旋轉,容器36可定義一中空軸40,自該第一本體部份起,延伸貫穿該第二本體部份、及設於其中之隔熱材料38,且與容器36底壁36a上之驅動軸37中心軸向通路37a同軸。
加熱器50可又包括一連接部52及一熱散逸部54。連接部52可具有一細長或筆直外型,其設有一第一、下方末端及一第二、上方末端。連接部52之下方末端可安裝於栓塞56上,其中該栓塞係位於驅動軸37之中心軸向通路37a內側,且可經由一容器與加熱器襯套間軸承44b支撐地連接至驅動軸37。連接部52可自栓塞56自由地朝上延伸貫穿中空軸40。連接部52之第二、上方末端可在通過軸40處,連接至熱散逸部54。熱散逸部54可又呈大致平面,且在位於支撐表面34下方、與其相鄰及平行之一平面上延伸,並且較佳地涵蓋大致相等於支撐表面34區域之一區域。第3圖至第5圖具體實施例之加熱器50具自我支撐之效用,除其以軸承連接至栓塞56以外,已無任何外在實體支撐件來確
保其保持位置或架構。加熱器50尤其未與基板支撐件32可旋轉式安裝容器36內之隔熱材料作機械式接觸。
如同第1圖至第2圖之第一具體實施例,門板42可支撐於一裝載器臂(未顯示)上,該裝載器臂可包括一承窩,配置成制動地收容栓塞56。當該裝載器臂位於適當位置時,其馬達可譬如經由設於基板支撐件32驅動軸37中之一貫穿容器驅動軸之徑向通路37b,而嚙合該驅動軸,且驅動該驅動軸來相對於加熱構件18、及加熱器50熱散逸部54二者,轉動基板支撐件32、及支撐於其上之晶圓28,以均化加熱構件18、及加熱器50熱散逸部54之加熱輪廓中的不均勻對該等晶圓所造成之影響。
儘管以上已部份地參考附屬圖式來說明本發明之圖示具體實施例,然請注意到,本發明並非以這些具體實施例為限。熟於本項技藝者可在經由研究圖式、說明、及隨附申請專利範圍來實行申請專利之發明時,了解及實現所揭示具體實施例之變動。
如此,請注意到,本發明申請案並非以垂直熱熔爐為限。例如,美國專利案第US 2010/0224130號(Smith等)係描述一種使用旋轉基板支撐件來處理單一基板之裝置。該揭示裝置包含一容室,具有置於該容室內之一基板支撐總成。該基板支撐總成包含一基板支撐件,其具有一支撐表面、及置於該支撐表面下方之一加熱器。一轉軸係耦接至該基板支撐件,且一馬達係經由一轉子耦接至該轉軸,以提供該基板支撐件旋轉運動。由於該加熱器係堅固地整
合(入)該基板支撐件,使該基板支撐件之一旋轉承擔該加熱器之一完全相同旋轉,因此支撐於基板支撐表面上之一基板將不致在處理期間相對於該加熱器旋轉、或著運動。緣是,該加熱器所產生之熱場中的任何不均勻,皆可造成非期望之基板內溫度分佈變動。本發明顯然可應用至美國專利申請案第US’130號之單一基板處理裝置中,以克服此問題。
綜觀本說明書全文,關於「某一具體實施例」或「一具體實施例」意指,結合該具體實施例作說明之一特殊特點、構造、或特徵係包含於本發明之至少一具體實施例中。是以,綜觀本說明書各不同位置出現之「某一具體實施例中」或「一具體實施例中」詞語,並非必須皆關聯於相同具體實施例。更,請注意到,一個或更多具體實施例之特殊特點、構造、或特徵可依任何適當方式組合,以形成新、未明確描述之具體實施例。
1‧‧‧垂直熱處理熔爐/反應器
10‧‧‧反應管
12‧‧‧反應室
14‧‧‧反應空間
16‧‧‧隔熱套筒
18‧‧‧電阻式盤管
20‧‧‧凸緣
22‧‧‧中心熔爐開口
24‧‧‧晶圓舟
26‧‧‧晶圓收容狹槽
28‧‧‧晶圓
30‧‧‧基板支撐總成
32‧‧‧基板支撐件/臺座
34‧‧‧支撐表面
36‧‧‧圓柱形容器
36a‧‧‧容器底壁
36b‧‧‧容器側壁
36c‧‧‧容器頂壁
37‧‧‧容器驅動軸
37a‧‧‧貫穿容器驅動軸之軸向通路
37b‧‧‧貫穿容器驅動軸之徑向通路
38‧‧‧隔熱材料
39‧‧‧支撐板
39a‧‧‧支撐軸
40‧‧‧貫穿隔熱材料之中空軸
42‧‧‧門板
44a‧‧‧門板與容器間軸承
44b‧‧‧容器與加熱器襯套間軸承
46‧‧‧彈性O型環
50‧‧‧加熱器
52‧‧‧加熱器連接部
54‧‧‧加熱器之熱散逸/生成部
56‧‧‧栓塞
L‧‧‧中心軸線
第1圖係依據本發明之一垂直熱處理熔爐/反應器一第一解說用具體實施例的一部份概略剖面側視圖,包含一基板支撐總成,該總成具有一基板支撐件,可環繞著容置於其中之一加熱器旋轉;第2圖係第1圖中所顯示之垂直熱熔爐基板支撐總成的放大剖面側視圖;第3圖係依據本發明之一垂直熱處理熔爐/反應器一
第二解說用具體實施例的一部份概略剖面透視圖,包含一基板支撐總成,該總成具有一基板支撐件,可環繞著容置於其中之一加熱器旋轉;第4圖係第3圖中所顯示之垂直熱熔爐概略剖面側視圖;及第5圖係第3圖及第4圖中所顯示之垂直熱熔爐基板支撐總成的放大剖面側視圖。
1‧‧‧垂直熱處理熔爐/反應器
10‧‧‧反應管
12‧‧‧反應室
14‧‧‧反應空間
16‧‧‧隔熱套筒
18‧‧‧電阻式盤管
20‧‧‧凸緣
22‧‧‧中心熔爐開口
24‧‧‧晶圓舟
26‧‧‧晶圓收容狹槽
28‧‧‧晶圓
32‧‧‧基板支撐件/臺座
34‧‧‧支撐表面
36‧‧‧圓柱形容器
36a‧‧‧容器底壁
36b‧‧‧容器側壁
36c‧‧‧容器頂壁
37‧‧‧容器驅動軸
37a‧‧‧貫穿容器驅動軸之軸向通路
37b‧‧‧貫穿容器驅動軸之徑向通路
38‧‧‧隔熱材料
40‧‧‧貫穿隔熱材料之中空軸
42‧‧‧門板
44a‧‧‧門板與容器間軸承
44b‧‧‧容器與加熱器襯套間軸承
46‧‧‧彈性O型環
50‧‧‧加熱器
52‧‧‧加熱器連接部
54‧‧‧加熱器之熱散逸/生成部
56‧‧‧栓塞
Claims (16)
- 一種半導體基板處理裝置(1),包括:一基板支撐總成(30),包含:一基板支撐件(32),定義一外支撐表面(34),以將一基板或晶圓舟(24)支撐其上;及一加熱器(50),包括一熱散逸部(54),設置於該基板支撐件(32)內且在該支撐表面(34)下方、與其大致平行延伸,該基板支撐件(32)係環繞著延伸貫穿該支撐表面(34)之一旋轉軸線(L),以可旋轉式安裝,其中該旋轉軸線(L)垂直該基板之一主要表面或該晶圓舟(24),使該支撐表面(34)可相對於該加熱器(50)之熱散逸部(54)旋轉。
- 如申請專利範圍第1項所述之裝置,其中該加熱器(50)係相關於該旋轉軸線(L)以不可旋轉式安裝。
- 如申請專利範圍第1或2項所述之裝置,其中該基板支撐總成(30)尚包括一底座總成,其包含一門板(42),用於密封該裝置(1)之一反應空間,其中該基板支撐件(32)係經由一第一軸承(44a)連接至該底座總成(42),以輔助該基板支撐件相對於該底座總成環繞該旋轉軸線(L)旋轉。
- 如申請專利範圍第3項所述之裝置,其中該加熱器(50)係經由一第二軸承(44b)連接至該基板支撐件(32),以輔助該基板支撐件相對於該加熱器環繞該旋轉軸線(L)旋轉。
- 如申請專利範圍第3項所述之裝置,其中該第一與第二軸承係可為定義出圓形且同軸座圈之滾珠軸承。
- 如申請專利範圍第3項所述之裝置,其中該基板支撐件(32)包含一底壁(36a)、一圓筒型側壁(36b)、及一頂壁(36c),該等壁係互連,以定義一較佳大體上圓柱形容器(36),其中該頂壁(36c)之一外表面係定義該基板支撐件之支撐表面(34);及其中該容器(36)係容置至少該加熱器(50)之熱散逸部(54)。
- 如申請專利範圍第3項所述之裝置,其中該容器(36)之底壁(36a)設有一朝下突出驅動軸(37),其定義出延伸貫穿該底壁之一通路(37a),以及其中該第一軸承(44a)係嚙合該驅動軸(37)之一外周邊;及其中該第二軸承(44b)係嚙合該驅動軸(37)之一內周邊。
- 如申請專利範圍第7項所述之裝置,其中該容器(36)至少部份地充滿一隔熱材料,置於該容器底壁(36a)與該加熱器(50)熱散逸部(54)之間。
- 如申請專利範圍第8項所述之裝置,其中該隔熱材料(38)係與該加熱器(50)呈一固定靜止關係設置。
- 如申請專利範圍第8或9項所述之裝置,尚包括一支撐板(39),置於該容器(36)內、鄰近其底壁(36a)但與其 相間隔之一位置,其中該支撐板(39)設有一支撐軸(39a),自該支撐板朝下突出而同軸地貫穿該容器(36)底壁(36a)上之驅動軸(37);及其中該隔熱材料(38)係支撐於該支撐板(39)上。
- 如申請專利範圍第10項所述之裝置,其中該加熱器(50)包含一連接部(52),連接至該熱散逸部(54)以將能量傳遞至其,且自該熱散逸部(54)延伸貫穿該隔熱材料(38)而進入該支撐軸(39a),其中該加熱器連接部(52)係嵌入該隔熱材料(38)中;及其中該加熱器熱散逸部(54)係承載於該隔熱材料(38)上方。
- 如申請專利範圍第8項所述之裝置,其中該隔熱材料(38)係與該容器(36)呈一靜止關係設置。
- 如申請專利範圍第12項所述之裝置,其中該容器(36)底壁(36a)上之驅動軸(37)係與沿該旋轉軸線(L)延伸貫穿該隔熱材料(38)之一細長形中空加熱器通路(40)相對正;及其中該加熱器(50)包含一連接部(52),用於將能量傳遞至該熱散逸部(54),該連接部係自該驅動軸內側自由地延伸貫穿該加熱器通路,以支撐地連接至該熱散逸部(54)。
- 如申請專利範圍第3項所述之裝置,其中該加熱器(50)之該熱散逸部(54)包括至少二個單獨控制加熱區,該 等加熱區係在該支撐表面(34)之不同部份下方延伸。
- 如申請專利範圍第3項所述之裝置,其中該基板處理裝置(1)係一垂直熱熔爐,尚包括一反應室(12),定義一反應空間(14)及一開口(22),該基板支撐總成(30)可經由該開口至少部份地收容於該反應室中,使得在該基板支撐總成之一獲收容狀態下,支撐於其上之一基板(28)或晶圓舟(24)將收容於該反應空間中,且該基板支撐總成(30)將大致密封該開口(22)。
- 一種加熱半導體基板之方法,包括:提供如申請專利範圍第1至15項中任一項所述之一半導體處理裝置(1);提供至少一基板(28),及可能地經由中介之一晶圓舟(24)來支撐該至少一基板於該基板支撐件(32)之支撐表面(34)上;及同步地加熱該加熱器(50),以使該加熱器之熱散逸部(54)散逸熱;及使該基板支撐件(32)環繞其旋轉軸線(L)旋轉,以使其支撐表面(34)上所支撐之該至少一基板(28)相對於其下方之該加熱器熱散逸部(54)旋轉。
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- 2012-07-12 TW TW101125102A patent/TWI541923B/zh active
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TWI819098B (zh) * | 2018-10-03 | 2023-10-21 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置及方法 |
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US9018567B2 (en) | 2015-04-28 |
TW201310566A (zh) | 2013-03-01 |
JP2013021336A (ja) | 2013-01-31 |
KR20130010435A (ko) | 2013-01-28 |
US20130017503A1 (en) | 2013-01-17 |
JP6095291B2 (ja) | 2017-03-15 |
KR101944432B1 (ko) | 2019-01-31 |
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