JP5275935B2 - 半導体製造装置および半導体製造方法 - Google Patents
半導体製造装置および半導体製造方法 Download PDFInfo
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- JP5275935B2 JP5275935B2 JP2009166891A JP2009166891A JP5275935B2 JP 5275935 B2 JP5275935 B2 JP 5275935B2 JP 2009166891 A JP2009166891 A JP 2009166891A JP 2009166891 A JP2009166891 A JP 2009166891A JP 5275935 B2 JP5275935 B2 JP 5275935B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000007246 mechanism Effects 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 32
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000001514 detection method Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000009191 jumping Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
図1に本実施形態の半導体製造装置であるエピタキシャル成長装置の断面図を示す。図に示すように、例えばφ200mmのウェーハwが成膜処理される反応炉11には、反応炉11上方より、トリクロロシラン、ジクロロシランなどのソースガスを含むプロセスガスなどを、所定の流量でウェーハw上に供給するためのガス供給機構(図示せず)と接続されたガス供給口12が設置されている。反応炉11下方には、例えば2箇所にガスを排出し、反応炉11内の圧力を一定(常圧)に制御するためのガス排出機構(図示せず)と接続されたガス排出口13が設置されている。
本実施形態において、実施形態1と半導体製造装置の構成は同様であるが、予備加熱時に回転部材であるリングも回転させている点が実施形態1と異なっている。
本実施形態において、実施形態1と半導体製造装置の構成は同様であるが、温度検出機構が上下回転駆動制御機構と接続されている点で、実施形態1と異なっている。
12…ガス供給口
13…ガス排出口
14、33…整流板
15…ライナー
16…サセプタ
17、37…リング
18、38…回転駆動制御機構
19…ヒータ
19a、34a…インヒータ
19b、34b…ミッドヒータ
19c、34c…アウトヒータ
20…リフレクター
21…スリット
22、35…突き上げベース
23…突き上げシャフト
24、36…上下回転駆動制御機構
25…ピン
26、32…温度検出機構
26a、26b…温度センサ
Claims (5)
- ウェーハが導入される反応炉と、
前記反応炉にプロセスガスを供給するためのガス供給機構と、
前記反応炉よりガスを排出するためのガス排出機構と、
スリットを有し、前記ウェーハを所定の温度に加熱するためのヒータと、
上昇させた状態で前記ウェーハが載置され、下降させた状態で前記スリット内に収納される突き上げベースと、
前記突き上げベースを、上昇、下降させるとともに、前記突き上げベースを上昇させた状態で前記突き上げベース上に載置された前記ウェーハを前記ヒータによって予備加熱しながら回転させる上下回転駆動制御機構と、
前記ウェーハを所定の位置で回転させるための回転部材およびこの回転部材と接続される回転駆動制御機構と、
を備えることを特徴とする半導体製造装置。 - 前記ウェーハと前記回転部材または前記突き上げベース間に配置される支持部材を備えることを特徴とする請求項1に記載の半導体製造装置。
- 反応炉内に成膜処理されるウェーハを導入し、
前記ウェーハが、前記成膜処理時に前記ウェーハを所定の位置で回転させる回転部材と離間した状態で、前記ウェーハを所定の回転速度で回転させながら、予備加熱し、
前記所定の位置で、前記ウェーハを所定温度で加熱し、回転させ、前記ウェーハ上にプロセスガスを供給することにより、前記ウェーハ上に成膜することを特徴とする半導体製造方法。 - 前記回転速度は、5〜300rpmであることを特徴とする請求項3に記載の半導体製造方法。
- 前記回転部材を回転させながら予備加熱することを特徴とする請求項3または請求項4に記載の半導体製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009166891A JP5275935B2 (ja) | 2009-07-15 | 2009-07-15 | 半導体製造装置および半導体製造方法 |
DE102010026987A DE102010026987B4 (de) | 2009-07-15 | 2010-07-13 | Herstellvorrichtung und -verfahren für Halbleiterbauelement |
US12/836,189 US9150981B2 (en) | 2009-07-15 | 2010-07-14 | Manufacturing apparatus and method for semiconductor device |
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JP2009166891A JP5275935B2 (ja) | 2009-07-15 | 2009-07-15 | 半導体製造装置および半導体製造方法 |
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JP2011023522A JP2011023522A (ja) | 2011-02-03 |
JP5275935B2 true JP5275935B2 (ja) | 2013-08-28 |
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US (1) | US9150981B2 (ja) |
JP (1) | JP5275935B2 (ja) |
DE (1) | DE102010026987B4 (ja) |
Families Citing this family (9)
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US9018567B2 (en) * | 2011-07-13 | 2015-04-28 | Asm International N.V. | Wafer processing apparatus with heated, rotating substrate support |
JP5064595B1 (ja) * | 2011-10-26 | 2012-10-31 | シャープ株式会社 | 気相成長装置 |
JP6091932B2 (ja) * | 2012-03-22 | 2017-03-08 | 株式会社ニューフレアテクノロジー | 炭化珪素の成膜装置および炭化珪素の成膜方法 |
US9948214B2 (en) * | 2012-04-26 | 2018-04-17 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
JP6248684B2 (ja) * | 2014-02-19 | 2017-12-20 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US10109510B2 (en) * | 2014-12-18 | 2018-10-23 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for improving temperature uniformity of a workpiece |
US10170889B1 (en) * | 2017-08-14 | 2019-01-01 | Lumentum Operations Llc | Controlling uniformity of lateral oxidation of wafer surface features using a vertical stack of horizontal wafers |
CN115020290B (zh) * | 2022-06-01 | 2023-04-14 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其工艺腔室和托盘的检测方法 |
CN116479411B (zh) * | 2023-04-27 | 2024-03-12 | 大连皓宇电子科技有限公司 | 一种化学气相沉积设备用的多工位硅片搬运装置 |
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US20030045128A1 (en) * | 1999-12-21 | 2003-03-06 | Toshiba Kikai Kabushiki Kaisha | Wafer transfer method performed with vapor thin film growth system and wafer support member used for this method |
JP2001176808A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Ceramics Co Ltd | 気相薄膜成長装置におけるウエハ搬送方法およびそれに用いるウエハ支持部材 |
JP4203206B2 (ja) * | 2000-03-24 | 2008-12-24 | 株式会社日立国際電気 | 基板処理装置 |
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JP2004119520A (ja) * | 2002-09-24 | 2004-04-15 | Tokyo Electron Ltd | 基板処理装置 |
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JP4956470B2 (ja) * | 2007-11-29 | 2012-06-20 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
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JP2009270143A (ja) * | 2008-05-02 | 2009-11-19 | Nuflare Technology Inc | サセプタ、半導体製造装置及び半導体製造方法 |
JP5079726B2 (ja) * | 2009-03-23 | 2012-11-21 | 株式会社ニューフレアテクノロジー | 半導体製造方法および半導体製造装置 |
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2009
- 2009-07-15 JP JP2009166891A patent/JP5275935B2/ja active Active
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- 2010-07-13 DE DE102010026987A patent/DE102010026987B4/de not_active Expired - Fee Related
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US9150981B2 (en) | 2015-10-06 |
DE102010026987A1 (de) | 2011-02-24 |
DE102010026987B4 (de) | 2013-10-17 |
JP2011023522A (ja) | 2011-02-03 |
US20110014789A1 (en) | 2011-01-20 |
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