JP5750339B2 - 気相成長方法及び気相成長装置 - Google Patents
気相成長方法及び気相成長装置 Download PDFInfo
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- JP5750339B2 JP5750339B2 JP2011189353A JP2011189353A JP5750339B2 JP 5750339 B2 JP5750339 B2 JP 5750339B2 JP 2011189353 A JP2011189353 A JP 2011189353A JP 2011189353 A JP2011189353 A JP 2011189353A JP 5750339 B2 JP5750339 B2 JP 5750339B2
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- 238000000034 method Methods 0.000 title claims description 25
- 238000001947 vapour-phase growth Methods 0.000 title claims description 18
- 238000005530 etching Methods 0.000 claims description 48
- 239000007795 chemical reaction product Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 43
- 230000005855 radiation Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Description
図1に本実施形態の気相成長装置の断面図を示す。図1に示すように、ウェーハwが成膜処理される反応室11には、必要に応じてその内壁を覆うように石英カバー11aが設けられている。
11a…石英カバー
12…ガス供給部
12a…ガス供給口
13…ガス排出部
13a…ガス排出口
14…整流板
15…ホルダ
16…リング
17…回転制御部
18…インヒータ
19…アウトヒータ
20…温度制御部
21…リフレクタ
22…突き上げピン
23a、23b、23c…放射温度計
24…反応生成物
Claims (4)
- 反応室内にウェーハを導入して、支持部上に載置し、
前記支持部の下方に設けられたヒータにより加熱し、前記ウェーハが所定温度となるように前記ヒータの出力を制御し、
前記ウェーハを回転させ、前記ウェーハ上にプロセスガスを供給することにより、前記ウェーハ上に成膜し、
前記反応室より前記ウェーハを搬出し、
前記反応室内にエッチングガスを供給して、前記反応室内に堆積した反応生成物をエッチングにより除去し、
前記反応生成物が除去されて、前記支持部の表面が露出するときに現れる、前記ヒータの出力が所定量に制御されるときの前記支持部上の温度である第1の温度の第1の特有の形、又は前記第1の温度が所定温度となるように制御される前記ヒータの出力の第2の特有の形を検出することにより、エッチング終点とすることを特徴とする気相成長方法。 - 成膜時に、前記ウェーハの温度である第2の温度を検出し、
前記第2の温度に基づき前記ヒータの出力を制御し、
前記成膜が終了した後、検出される温度を前記第1の温度に切り替え、
前記第1の温度に基づき前記ヒータの出力を制御することを特徴とする請求項1に記載の気相成長方法。 - 前記反応室を昇温させながら、前記エッチングガスを供給することを特徴とする請求項1又は請求項2に記載の気相成長方法。
- ウェーハが導入される反応室と、
前記反応室にプロセスガスおよびエッチングガスを供給するためのガス供給部と、
前記反応室よりガスを排出するためのガス排出部と、
前記ウェーハを載置する支持部と、
前記ウェーハを回転させるための回転制御部と、
前記反応室を所定の温度に加熱するためのヒータと、
前記支持部の第1の温度を検出するための第1の温度検出部と、
前記ウェーハの第2の温度を検出するための第2の温度検出部と、
前記エッチングガスの供給によって前記支持部の表面の反応生成物が除去されて、前記支持部の表面が露出したときに現れる、前記ヒータの出力が所定量に制御されるときの前記第1の温度の第1の特有の形、又は前記第1の温度が所定温度となるように制御される前記ヒータの出力の第2の特有の形を検出することにより、エッチング終点を検出するエッチング終点検出機構と、
を備えることを特徴とする気相成長装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011189353A JP5750339B2 (ja) | 2011-08-31 | 2011-08-31 | 気相成長方法及び気相成長装置 |
KR1020120094509A KR101422555B1 (ko) | 2011-08-31 | 2012-08-28 | 기상 성장 방법 및 기상 성장 장치 |
US13/597,883 US20130052754A1 (en) | 2011-08-31 | 2012-08-29 | Vapor growth method and vapor growth apparatus |
Applications Claiming Priority (1)
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JP2011189353A JP5750339B2 (ja) | 2011-08-31 | 2011-08-31 | 気相成長方法及び気相成長装置 |
Publications (2)
Publication Number | Publication Date |
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JP2013051350A JP2013051350A (ja) | 2013-03-14 |
JP5750339B2 true JP5750339B2 (ja) | 2015-07-22 |
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JP2011189353A Expired - Fee Related JP5750339B2 (ja) | 2011-08-31 | 2011-08-31 | 気相成長方法及び気相成長装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130052754A1 (ja) |
JP (1) | JP5750339B2 (ja) |
KR (1) | KR101422555B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111020658A (zh) * | 2019-12-31 | 2020-04-17 | 福冈科技(苏州)有限公司 | 一种pet电镀装饰膜生产工艺及其生产设备 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5640894B2 (ja) * | 2011-05-26 | 2014-12-17 | 東京エレクトロン株式会社 | 温度測定装置、温度測定方法、記憶媒体及び熱処理装置 |
JP6279396B2 (ja) * | 2014-05-12 | 2018-02-14 | 株式会社ニューフレアテクノロジー | 気相成長方法及び気相成長装置 |
JP6360407B2 (ja) * | 2014-10-02 | 2018-07-18 | グローバルウェーハズ・ジャパン株式会社 | サセプタの洗浄方法 |
TWI608557B (zh) * | 2015-04-08 | 2017-12-11 | 聿光科技有限公司 | 晶圓之磊晶反應器及其中央星盤 |
JP6524944B2 (ja) * | 2016-03-18 | 2019-06-05 | 信越半導体株式会社 | 気相エッチング方法及びエピタキシャル基板の製造方法 |
FR3068506B1 (fr) | 2017-06-30 | 2020-02-21 | Soitec | Procede pour preparer un support pour une structure semi-conductrice |
Family Cites Families (15)
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JP3103228B2 (ja) * | 1992-12-09 | 2000-10-30 | 株式会社日立製作所 | ガス処理装置 |
KR0134654B1 (ko) * | 1993-10-05 | 1998-04-20 | 이요시 슌키치 | 광파이버를 사용한 온도측정장치 및 방법 |
JP3548634B2 (ja) * | 1995-07-14 | 2004-07-28 | 東京エレクトロン株式会社 | 成膜装置及びこの装置における堆積膜除去方法 |
WO1998001894A1 (fr) * | 1996-07-03 | 1998-01-15 | Hitachi, Ltd. | Procede de fabrication d'un composant de circuit integre a semi-conducteur |
JPH10214807A (ja) * | 1997-01-31 | 1998-08-11 | Hitachi Chem Co Ltd | 半導体基板の研磨方法 |
US6450116B1 (en) * | 1999-04-22 | 2002-09-17 | Applied Materials, Inc. | Apparatus for exposing a substrate to plasma radicals |
JP3670533B2 (ja) * | 1999-09-27 | 2005-07-13 | 株式会社東芝 | 基板処理装置及びそのクリーニング方法 |
US6635144B2 (en) * | 2001-04-11 | 2003-10-21 | Applied Materials, Inc | Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment |
JP3857623B2 (ja) * | 2001-08-07 | 2006-12-13 | 株式会社日立国際電気 | 温度制御方法及び半導体装置の製造方法 |
JP4121269B2 (ja) * | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | セルフクリーニングを実行するプラズマcvd装置及び方法 |
TW526545B (en) * | 2002-02-05 | 2003-04-01 | Winbond Electronics Corp | Method for using pressure to determine the end point of gas cleaning and method of determination thereof |
JP2004172409A (ja) * | 2002-11-20 | 2004-06-17 | Tokyo Electron Ltd | 反応容器のクリーニング方法及び成膜装置 |
US8608900B2 (en) * | 2005-10-20 | 2013-12-17 | B/E Aerospace, Inc. | Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes |
US8961691B2 (en) * | 2008-09-04 | 2015-02-24 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method |
JP2010280945A (ja) * | 2009-06-04 | 2010-12-16 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
-
2011
- 2011-08-31 JP JP2011189353A patent/JP5750339B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-28 KR KR1020120094509A patent/KR101422555B1/ko active IP Right Grant
- 2012-08-29 US US13/597,883 patent/US20130052754A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111020658A (zh) * | 2019-12-31 | 2020-04-17 | 福冈科技(苏州)有限公司 | 一种pet电镀装饰膜生产工艺及其生产设备 |
Also Published As
Publication number | Publication date |
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KR20130024818A (ko) | 2013-03-08 |
JP2013051350A (ja) | 2013-03-14 |
US20130052754A1 (en) | 2013-02-28 |
KR101422555B1 (ko) | 2014-07-24 |
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